ECE 252 / CPS 220 Advanced Computer Architecture I Lecture 1
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Nanotechnology ? Nram (Nano Random Access
International Journal Of Engineering Research and Technology (IJERT) IFET-2014 Conference Proceedings INTERFACE ECE T14 INTRACT – INNOVATE - INSPIRE NANOTECHNOLOGY – NRAM (NANO RANDOM ACCESS MEMORY) RANJITHA. T, SANDHYA. R GOVERNMENT COLLEGE OF TECHNOLOGY, COIMBATORE 13. containing elements, nanotubes, are so small, NRAM technology will Abstract— NRAM (Nano Random Access Memory), is one of achieve very high memory densities: at least 10-100 times our current the important applications of nanotechnology. This paper has best. NRAM will operate electromechanically rather than just been prepared to cull out answers for the following crucial electrically, setting it apart from other memory technologies as a questions: nonvolatile form of memory, meaning data will be retained even What is NRAM? when the power is turned off. The creators of the technology claim it What is the need of it? has the advantages of all the best memory technologies with none of How can it be made possible? the disadvantages, setting it up to be the universal medium for What is the principle and technology involved in NRAM? memory in the future. What are the advantages and features of NRAM? The world is longing for all the things it can use within its TECHNOLOGY palm. As a result nanotechnology is taking its head in the world. Nantero's technology is based on a well-known effect in carbon Much of the electronic gadgets are reduced in size and increased nanotubes where crossed nanotubes on a flat surface can either be in efficiency by the nanotechnology. The memory storage devices touching or slightly separated in the vertical direction (normal to the are somewhat large in size due to the materials used for their substrate) due to Van der Waal's interactions. -
Solid State Drives Data Reliability and Lifetime
Solid State Drives Data Reliability and Lifetime White Paper Alan R. Olson & Denis J. Langlois April 7, 2008 Abstract The explosion of flash memory technology has dramatically increased storage capacity and decreased the cost of non-volatile semiconductor memory. The technology has fueled the proliferation of USB flash drives and is now poised to replace magnetic hard disks in some applications. A solid state drive (SSD) is a non-volatile memory system that emulates a magnetic hard disk drive (HDD). SSDs do not contain any moving parts, however, and depend on flash memory chips to store data. With proper design, an SSD is able to provide high data transfer rates, low access time, improved tolerance to shock and vibration, and reduced power consumption. For some applications, the improved performance and durability outweigh the higher cost of an SSD relative to an HDD. Using flash memory as a hard disk replacement is not without challenges. The nano-scale of the memory cell is pushing the limits of semiconductor physics. Extremely thin insulating glass layers are necessary for proper operation of the memory cells. These layers are subjected to stressful temperatures and voltages, and their insulating properties deteriorate over time. Quite simply, flash memory can wear out. Fortunately, the wear-out physics are well understood and data management strategies are used to compensate for the limited lifetime of flash memory. Floating Gate Flash Memory Cells Flash memory was invented by Dr. Fujio Masuoka while working for Toshiba in 1984. The name "flash" was suggested because the process of erasing the memory contents reminded him of the flash of a camera. -
Embedded DRAM
Embedded DRAM Raviprasad Kuloor Semiconductor Research and Development Centre, Bangalore IBM Systems and Technology Group DRAM Topics Introduction to memory DRAM basics and bitcell array eDRAM operational details (case study) Noise concerns Wordline driver (WLDRV) and level translators (LT) Challenges in eDRAM Understanding Timing diagram – An example References Slide 1 Acknowledgement • John Barth, IBM SRDC for most of the slides content • Madabusi Govindarajan • Subramanian S. Iyer • Many Others Slide 2 Topics Introduction to memory DRAM basics and bitcell array eDRAM operational details (case study) Noise concerns Wordline driver (WLDRV) and level translators (LT) Challenges in eDRAM Understanding Timing diagram – An example Slide 3 Memory Classification revisited Slide 4 Motivation for a memory hierarchy – infinite memory Memory store Processor Infinitely fast Infinitely large Cycles per Instruction Number of processor clock cycles (CPI) = required per instruction CPI[ ∞ cache] Finite memory speed Memory store Processor Finite speed Infinite size CPI = CPI[∞ cache] + FCP Finite cache penalty Locality of reference – spatial and temporal Temporal If you access something now you’ll need it again soon e.g: Loops Spatial If you accessed something you’ll also need its neighbor e.g: Arrays Exploit this to divide memory into hierarchy Hit L2 L1 (Slow) Processor Miss (Fast) Hit Register Cache size impacts cycles-per-instruction Access rate reduces Slower memory is sufficient Cache size impacts cycles-per-instruction For a 5GHz -
A 3T Gain Cell Embedded DRAM Utilizing Preferential Boosting for High Density and Low Power On-Die Caches Ki Chul Chun, Pulkit Jain, Jung Hwa Lee, and Chris H
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 6, JUNE 2011 1495 A 3T Gain Cell Embedded DRAM Utilizing Preferential Boosting for High Density and Low Power On-Die Caches Ki Chul Chun, Pulkit Jain, Jung Hwa Lee, and Chris H. Kim, Senior Member, IEEE Abstract—Circuit techniques for enabling a sub-0.9 V logic-com- for achieving low static power and high operating speed. patible embedded DRAM (eDRAM) are presented. A boosted 3T SRAMs have been the embedded memory of choice due to gain cell utilizes Read Word-line (RWL) preferential boosting to their logic compatibility and fast access time. Recently, em- increase read margin and improve data retention time. Read speed is enhanced with a hybrid current/voltage sense amplifier that al- bedded DRAMs (eDRAMs) have been gaining popularity in lows the Read Bit-line (RBL) to remain close to VDD. A regu- the research community due to features such as small cell size, lated bit-line write scheme for driving the Write Bit-line (WBL) is low cell leakage, and non-ratioed circuit operation. There have equipped with a steady-state storage node voltage monitor to over- been a number of successful eDRAM designs based on tradi- come the data ‘1’ write disturbance problem of the PMOS gain cell without introducing another boosted supply for the Write Word- tional 1T1C DRAM cells as well as logic-compatible gain cells line (WWL) over-drive. An adaptive and die-to-die adjustable read [2]–[9]. 1T1C cells are denser than gain cells, but at the cost of a reference bias generator is proposed to cope with PVT variations. -
2129710142200313CSE312 Amir Adel Salah.Pdf
استمارة جقييم الزسائل البحثيت ملقزر دراس ي اوﻻ : بياهاث جمل بمعزفت الطالب اسم الطالبـــــــــــ :أم ري عادل صﻻح عبد العظيم كلية : الهندســــه القسم: الحاسبات و النظم الفرقة/المستوى : الثالثة الشعبة : اسم المقرر :بنية الحاسب كود المقرر : CSE312 استاذ المقرر : د.طارق مراد جمعة ر ال رييد اﻻلكيون [email protected] : للطالب عنوان الرسالة البحثية : Modern Computers Memory ثاهيا: بياهاث جمل بمعزفت لجىت املمتحىيين هل الزسالت البحثيت املقدمت متشابت جشئيا او كليا ☐ وعم ☐ ﻻ فى حالت الاجابت بىعم ﻻ يتم جقييم املشزوع البحثى ويعتبر غير مجاس جقييم املشزوع البحثى م عىاصز التقييم الوسن التقييم اليسبى 1 الشكل العام للزسالت البحثيت 2 جحقق املتطلباث العلميت املطلوبت 3 يذكز املزاجع واملصادر العلميت 4 الصياغت اللغويت واسلوب الكتابت جيد هتيجت التقييم النهائى 100/ ☐ هاجح ☐ راسب جوقيع لجىت التقييم 1. .2 .3 .4 .5 جزفق هذه الاستمارة كغﻻف للمشزوع البحثى بعد استكمال البياهاث بمعزفت الطالب وعلى ان ﻻ جشيد عً صفحت واحدة Computers Memory Introduction At the beginning of the age of technology , A new term name called Memory has appeared .The memory is the most important thing in Computer . it is the main item which is responsible for data storage. The memories were designed by different ways and through multiple stages. At the beginning of memory manufacturing, the memory was produced by vacuum tubes from 1946 to 1959 .Vacuum tubes were basic components which was used to make the first generation of memories . Also the vacuum tubes used to make circuitry of CPU (Central Processing unit).In this generation ,the basic programming language was machine code which used in computers used vacuum tubes in the memory. -
SRAM Edram DRAM
Technology Challenges and Directions of SRAM, DRAM, and eDRAM Cell Scaling in Sub- 20nm Generations Jai-hoon Sim SK hynix, Icheon, Korea Outline 1. Nobody is perfect: Main memory & cache memory in the dilemma in sub-20nm era. 2. SRAM Scaling: Diet or Die. 6T SRAM cell scaling crisis & RDF problem. 3. DRAM Scaling: Divide and Rule. Unfinished 1T1C DRAM cell scaling and its technical direction. 4. eDRAM Story: Float like a DRAM & sting like a SRAM. Does logic based DRAM process work? 5. All for one. Reshaping DRAM with logic technology elements. 6. Conclusion. 2 Memory Hierarchy L1$ L2$ SRAM Higher Speed (< few nS) Working L3$ Better Endurance eDRAM Memory (>1x1016 cycles) Access Speed Access Stt-RAM Main Memory DRAM PcRAM ReRAM Lower Speed Bigger Size Storage Class Memory NAND Density 3 Technologies for Cache & Main Memories SRAM • 6T cell. • Non-destructive read. • Performance driven process Speed technology. eDRAM • Always very fast. • 1T-1C cell. • Destructive read and Write-back needed. • Leakage-Performance compromised process technology. Standby • Smaller than SRAM and faster than Density Power DRAM. DRAM • 1T-1C cell. • Destructive read and Write-back needed. • Leakage control driven process technology. • Not always fast. • Smallest cell and lowest cost per bit. 4 eDRAM Concept: Performance Gap Filler SRAM 20-30X Cell Size Cell eDRAM DRAM 50-100X Random Access Speed • Is there any high density & high speed memory solution that could be 100% integrated into logic SoC? 5 6T-SRAM Cell Operation VDD WL WL DVBL PU Read PG SN SN WL Icell PD BL VSS BL V SN BL BL DD SN PD Read Margin: Write PG PG V Write Margin: SS PU Time 6 DRAM’s Charge Sharing DVBL VS VBL Charge Sharing Write-back VPP WL CS CBL V BL DD 1 SN C V C V C C V S DD B 2 DD S B BL 1/2VDD Initial Charge After Charge Sharing DVBL T d 1 1 V BL SS DVBL VBL VBL VDD 1 CB / CS 2 VBBW Time 1 1 I t L RET if cell leakage included Cell select DVBL VDD 1 CB / CS 2 CS 7 DRAM Scalability Metrics BL Cell WL CS • Cell CS. -
Hereby the Screen Stands in For, and Thereby Occludes, the Deeper Workings of the Computer Itself
John Warnock and an IDI graphical display unit, University of Utah, 1968. Courtesy Salt Lake City Deseret News . 24 doi:10.1162/GREY_a_00233 Downloaded from http://www.mitpressjournals.org/doi/pdf/10.1162/GREY_a_00233 by guest on 27 September 2021 The Random-Access Image: Memory and the History of the Computer Screen JACOB GABOURY A memory is a means for displacing in time various events which depend upon the same information. —J. Presper Eckert Jr. 1 When we speak of graphics, we think of images. Be it the windowed interface of a personal computer, the tactile swipe of icons across a mobile device, or the surreal effects of computer-enhanced film and video games—all are graphics. Understandably, then, computer graphics are most often understood as the images displayed on a computer screen. This pairing of the image and the screen is so natural that we rarely theorize the screen as a medium itself, one with a heterogeneous history that develops in parallel with other visual and computa - tional forms. 2 What then, of the screen? To be sure, the computer screen follows in the tradition of the visual frame that delimits, contains, and produces the image. 3 It is also the skin of the interface that allows us to engage with, augment, and relate to technical things. 4 But the computer screen was also a cathode ray tube (CRT) phosphorescing in response to an electron beam, modified by a grid of randomly accessible memory that stores, maps, and transforms thousands of bits in real time. The screen is not simply an enduring technique or evocative metaphor; it is a hardware object whose transformations have shaped the ma - terial conditions of our visual culture. -
Random Access Memory (Ram)
www.studymafia.org A Seminar report On RANDOM ACCESS MEMORY (RAM) Submitted in partial fulfillment of the requirement for the award of degree of Bachelor of Technology in Computer Science SUBMITTED TO: SUBMITTED BY: www.studymafia.org www.studymafia.org www.studymafia.org Acknowledgement I would like to thank respected Mr…….. and Mr. ……..for giving me such a wonderful opportunity to expand my knowledge for my own branch and giving me guidelines to present a seminar report. It helped me a lot to realize of what we study for. Secondly, I would like to thank my parents who patiently helped me as i went through my work and helped to modify and eliminate some of the irrelevant or un-necessary stuffs. Thirdly, I would like to thank my friends who helped me to make my work more organized and well-stacked till the end. Next, I would thank Microsoft for developing such a wonderful tool like MS Word. It helped my work a lot to remain error-free. Last but clearly not the least, I would thank The Almighty for giving me strength to complete my report on time. www.studymafia.org Preface I have made this report file on the topic RANDOM ACCESS MEMORY (RAM); I have tried my best to elucidate all the relevant detail to the topic to be included in the report. While in the beginning I have tried to give a general view about this topic. My efforts and wholehearted co-corporation of each and everyone has ended on a successful note. I express my sincere gratitude to …………..who assisting me throughout the preparation of this topic. -
Design and Comparative Analysis of Low Power Dynamic Random Access Memory Array Strucyure
International Journal of Engineering Research & Technology (IJERT) ISSN: 2278-0181 Vol. 4 Issue 04, April-2015 Design and Comparative Analysis of Low Power Dynamic Random Access Memory Array Strucyure Mr. K. Gavaskar Mr. E. Kathikeyan, Ms. S. Rohini, Assistant professor/ECE, Mr. S. Kavinkumar Kongu Engineering College UG scholar/ECE, Erode, India Kongu Engineering College Erode, India Abstract- Memory plays an essential role in the design of structure is simplicity [8] and it is used in high densities. electronic systems where storage of data is required. In this DRAM is used in main memories in personal computers paper comparative analysis of different DRAM (Dynamic and in mainframes [7]. Random Access Memory) cell based memory array structure In modern day processor power dissipation plays a major has been carried out in nanometer scale memories. Modern advanced processor use DRAM cells for chip and program role because of the miniaturization of the chip memory. But the major drawback of DRAM is the power design. So this stack technique can be used in future for dissipation. The major contribution of power dissipation in reducing the power consumption. Further enhancement can DRAM is off-state leakage current. Also the improvement of also be made in the design in future to reduce the delay, power efficiency is difficult in DRAM cells. This paper because stacking of transistors increases delay and this investigates the power dissipation analysis in DRAM cells. DRAM cell can be used effectively. Since the cost and size Here 1T1C dram cell, 3T dram cell, 4T dram cell has been of DRAM cells are less when compared to SRAM cells and designed using TANNER EDA Tool. -
On the Scaling of Electronic Charge-Storing Memory Down to the Size of Molecules
On the Scaling of Electronic Charge-Storing Memory Down to the Size of Molecules Jacob S. Burnim November 2001 MP 01W0000319 MII TRE McLean, Virginia Submitted to the 2001-02 Intel Science Talent Search Contest On the Scaling of Electronic Charge-Storing Memory Down to the Size of Molecules Jacob S. Burnim November 2001 MP 01W0000319 Sponsor MITRE MSR Program Project No. 51MSR89G Dept. W062 Approved for public release; distribution unlimited. Copyright © 2001 by The MITRE Corporation. All rights reserved. SUMMARY This investigation quantitatively explores the possibility of shrinking electronic, charge-storing, random access memory to the molecular-scale. The results suggest that quantum effects may hinder the operation of electronic memory on such small scales, but this effect is not pronounced enough to prevent its functioning. Thus, it should be possible to build and operate such memory at densities 10,000 to 100,000 times greater than present-day memory. ABSTRACT This paper presents an analysis of the performance impact of scaling present-day micrometer-scale, charge-storing random-access memory (RAM) down to the scale of proposed molecular electronic memory. As a part of this analysis, the likely performance is determined for arrays of molecular-scale memory 10,000 to 100,000 times denser than present-day memory. A combination of classical and quantum mechanical methods are employed to calculate the properties of nanometer-scale devices and memory systems. These calculations suggest that quantum mechanics and other small-scale effects should decrease the capacitance and increase the resistance of molecular-scale circuit components. However, these trends are not pronounced enough to prevent the operation of charge-storing memory on that scale. -
CS 152 Computer Architecture and Engineering Lecture 6
CS 152 Computer Architecture and Engineering Lecture 6 - Memory Dr. George Michelogiannakis EECS, University of California at Berkeley CRD, Lawrence Berkeley National Laboratory http://inst.eecs.berkeley.edu/~cs152 2/8/2016 CS152, Spring 2016 CS152 Administritivia . PS 1 due on Wednesday’s class . Lab 1 also due at the same time . Hand paper reports or email . PS 2 will be released on Wendesday . Lab 2 Wednesday or Thursday . Quiz next week Wednesday (17th) . Discussion section on Thursday to cover lab 2 and PS 1 2/8/2016 CS152, Spring 2016 2 Question of the Day . Can a cache worsen performance, latency, bandwidth compared to a system with DRAM and no caches? 2/8/2016 CS152, Spring 2016 3 Last time in Lecture 5 . Control hazards (branches, interrupts) are most difficult to handle as they change which instruction should be executed next . Branch delay slots make control hazard visible to software, but not portable to more advanced µarchs . Speculation commonly used to reduce effect of control hazards (predict sequential fetch, predict no exceptions, branch prediction) . Precise exceptions: stop cleanly on one instruction, all previous instructions completed, no following instructions have changed architectural state . To implement precise exceptions in pipeline, shift faulting instructions down pipeline to “commit” point, where exceptions are handled in program order 2/8/2016 CS152, Spring 2016 4 Early Read-Only Memory Technologies Punched cards, From early 1700s through Jaquard Loom, Punched paper tape, Babbage, and then IBM instruction -
CSCI 4717/5717 Computer Architecture Basic Organization
Basic Organization CSCI 4717/5717 Memory Cell Operation Computer Architecture • Represent two stable/semi-stable states representing 1 and 0 Topic: Internal Memory Details • Capable of being written to at least once • Capable of being read multiple times Reading: Stallings, Sections 5.1 & 5.3 CSCI 4717 – Computer Architecture Memory Details – Page 1 of 34 CSCI 4717 – Computer Architecture Memory Details – Page 2 of 34 Random Access Memory Semiconductor Memory Types • Random Access Memory (RAM) • Misnomer (Last week we learned that the term • Read Only Memory (ROM) Random Access Memory refers to accessing • Programmable Read Only Memory (PROM) individual memory locations directly by address) • Eraseable Programmable Read Only Memory • RAM allows reading and writing (electrically) of (EPROM) data at the byte level • Electronically Eraseable Programmable Read •Two types Only Memory (EEPROM) –Static RAM – Dynamic RAM • Flash Memory • Volatile CSCI 4717 – Computer Architecture Memory Details – Page 3 of 34 CSCI 4717 – Computer Architecture Memory Details – Page 4 of 34 Read Only Memory (ROM) ROM Uses • Sometimes can be erased for reprogramming, but might have odd requirements such as UV light or • Permanent storage – nonvolatile erasure only at the block level • Microprogramming • Sometimes require special device to program, i.e., • Library subroutines processor can only read, not write • Systems programs (BIOS) •Types • Function tables – EPROM • Embedded system code – EEPROM – Custom Masked ROM –OTPROM –FLASH CSCI 4717 – Computer Architecture