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Super High-Frequency Scandium Aluminum Nitride Crystalline Film Bulk Acoustic Resonators

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Super High-Frequency Scandium Aluminum Nitride Crystalline Film Bulk Acoustic Resonators Super High-Frequency Scandium Aluminum Nitride Crystalline Film Bulk Acoustic Resonators Mingyo Park Jialin Wang Rytis Dargis Department of Electrical and Computer Department of Electrical and Computer IQE Plc Engineering Engineering Greensboro, NC, USA Georgia Institute of Technology Georgia Institute of Technology [email protected] Atlanta, GA, USA Atlanta, GA, USA [email protected] [email protected] Azadeh Ansari Andrew Clark Department of Electrical and Computer IQE Plc Engineering Greensboro, NC, USA Georgia Institute of Technology [email protected] Atlanta, Ga, USA [email protected] Abstract—This work presents promising results of overtone thickness resonance modes of film bulk acoustic resonators Ti/Au TiScAlN/Au Mo cREO Si (FBARs) operating at Ku band, traditionally perceived Top Electrode unachievable by acoustic devices. We take advantage of the epitaxial growth of the bottom metal electrode, as well as the Epi-Sc0.12Al0.88N piezoelectric layer to improve thin-film crystal quality and hence Piezo-layer Bottom Contact quality factor (Q). This work is the first demonstration of a multi- EpBottomi-Mo Electrode GHz FBAR realized on single-crystalline Sc0.12Al0.88N/Mo stack. Buffer Layer cREO Keywords—5G mobile communication, Films bulk acoustic (a) (a) (b) (b) resonators, Acoustic filters, Single crystalline, Scandium aluminum nitride, Epitaxial molybdenum, Molecular beam Fig.1. (a) SEM imag of the fabricated Sc0.12Al0.88N apodized FBAR. (b) epitaxy. Resonant stack with a total stack tickness of ~550 nm. I. INTRODUCTION the crystallinity of the metal layer for the bottom electrodes Emerging next-generation wireless communication devices plays an important role in supporting the formation of a well- call for high-performance filters that operate at 3-30 GHz oriented piezoelectric layer with surface uniformity [7]. (super-high frequency range) and offer low loss, wide Aluminum nitride (AlN) is popular in today’s FBARs due to the bandwidth and steep skirts [1]. The thin films bulk acoustic well-developed micromachining techniques as well as relatively resonators (FBARs) and filters are a promising technology to high phase velocity and large Q for high-frequency operation [7]. fulfill this requirement in SHF range, offering high-quality Scandium aluminum nitride (ScAlN) is recently introduced factor (Q) and a large electromechanical coupling coefficient showing the enhanced electromechanical coupling coefficient 2 (푘푡 ) [1], [2]. To scale up the resonant frequency of FBARs, the by an increase in the piezoelectric coefficient up to 4-5 times thickness of the piezoelectric material needs to be reduced to larger than pure AlN [8], [9]. AlN/ScAlN are mostly deposited sub-micron ranges. However, crystallinity becomes a significant using sputtering techniques owing to low cost and relatively issue when the device thickness is thinned down below 1 um to high growth rates [10]. However, polycrystalline AlN/ScAlN achieve higher frequency operation. There is a strong correlation films show degraded crystal quality when the thickness of films between the crystallinity of the piezoelectric layer and Q-factor, is smaller than 1um [3], [4]. 2 as well as the 푘푡 of the device, showing limited Q of polycrystalline thin films by an increase in the scattering losses This work utilizes a novel all-crystalline epitaxial stack of 2 metal/ScAlN grown on engineered oxide on Si substrate as at the grain boundaries of films and degraded 푘푡 dueto larger full width at half maximum (FWHM), showing poor shown in Fig.1. Due to the high quality of epitaxial thin metal crystallinity of thin-film [3], [4]. Furthermore, the metal and piezoelectric material growth, a high Q of 1230 is achieved for a 4.6 GHz fundamental thickness mode, yielding an f × Q electrodes are needed to be optimized for SHF operation. The 12 electromechanical coupling coefficient of FBAR is highly value of 5.6 × 10 Hz. Second and third-order overtone dependent on the thickness ratio between metal and resonance modes are picked up at 11.8 and 19.0 GHz with f × 12 12 piezoelectric layers [5]. However, thining down the metal Q value of 2.5 × 10 Hz and 2.3 × 10 Hz, respectively. This electrode is challenging since the sheet resistivity of the metal work is the first demonstration of a multi-GHz FBAR realized layer increases as the metal thickness decreases [6]. In addition, on single-crystalline 12% SCAlN/Mo stack. 1.E+8 PR Mask (3 um) (a) Si <111> ScAlN (400 nm) 1.E+6 Mo (50 nm) cREO (40 nm) Er <222> Mo <110> 1.E+4 Si(111) (a) (b) Patterning Mask and Etching SCAlN Intensity (Counts) Intensity 1.E+2 Top Electrode 1.E+0 13.5 15.5 17.5 19.5 21.5 Bottom Contact θ (degree) 10 (b) (c) (d) Etching Mo with the RIE Depositing Ti/Au and Metal Lift off /square) 1 Trench Rsh ( Rsh . Epitaxial Mo on cREO —Mo Bulk Resistivity 0.1 0.0 40.0 80.0 120.0 (e) (f) XRR Thickness (nm) Etching cREO with the ICP Releasing with XeF2 Si Etcher Fig.2. Material characterization: (a) X-ray diffraction (XRD) pattern for Fig.3. Sequencial steps of the fabrication process of the single-crystaline epitaxial Mo-cREO on Si (111) and (b) sheet resistivity of epitaxial Mo on ScAlN FBAR: (a) single-crystalline ScAlN-Mo-cREO on Si (111); (b) cREO/Bulk Mo on Si, according to Mo thickness by using X-ray etching ScAlN with PR mask patterned by MLA; (c) eching Mo with RIE; reflectivity (XRR) [8]. (d) deposting Ti/Au with a thickness of 5/75 nm for top and bottom electordes and metal lift off; (e) etching cREO with the plasmaPT-ICP for device trench; (f) releasing devices with XeF2 Si etcher. II. THIN FILM MATERIAL CHARACTERISTICS AND Mo metal layer as shown in Fig.3(a)-(b). Then, the 50 nm thick FABRICATION PROCESS epitaxial Mo is patterned by the reactive ion etcher (RIE) plasma system to expose cREO layer as depicted in Fig.3(c). After A. Thin Film Material Characteristics cleaning the remaining PR mask, Ti/Au with a thickness of 5 /75 The thin-film single crystalline (12%) ScAlN with a nm is deposited as the top electrode and lead to access the thickness of 400 nm is directly grown on top of the epitaxial bottom electrode, as presented in Fig.3(d). As shown in Fig.3(e), Molybdenum (Mo) with a thickness of 50 nm as the bottom the cREO is etched by ICP to access the Si substrate. Finally, the electrode of the acoustic device by using molecular beam devices are released from the host Si substrate using xenon epitaxy (MBE) [6]. The epitaxially-grown Mo is thinned down difluoride (XeF2)-based isotropic Si etcher as shown in Fig.3(f). to match the scaling of the device based on the thickness of the Fig.1 shows the scanning electron microscope (SEM) image of piezoelectric layer [5]. A crystal rare earth oxide (cREO) layer the apodized FBAR with one-port GSG pads with the overall with a thickness of 40 nm is grown on top of the Si substrate to cross-section of the resonator stack. prevent the formation of a metal silicide as a chemical barrier between the metal layer and the underlying silicon [6]. The III. DEVICE CHARACTERISTICS AND EXPERIMENTAL RESULTS crystal structure of epitaxially grown Mo-cREO on Si was A. Characterization of Over-tone Resonance Modes analyzed using an X-ray diffraction (XRD) pattern as shown in Fig. 4(a) illustrates the COMSOL finite element analysis Fig.2(a) [6]. FWHM value in the range from 0.8 to 1˚ is scanned with the <110> rocking curve at θ = 20.31˚ for epitaxial Mo- (FEA) simulation result of the excited thickness resonance cREO on Si. Fig.2(b) illustrates the sheet resistivity of epi-Mo modes along with the displacement of mode shapes with a stack on cREO depending on the X-ray reflectivity (XRR) thickness, of 12% ScAlN piezo-electric layer (400 nm-thick), Mo bottom showing that the measured sheet resistivity of epi-Mo-cREO has electrode epi-metal layer (50 nm-thick), cREO layer (40 nm- a similar trend compared to that of conventional bulk Mo. thick) and Ti/Au top electrodes (5/75 nm-thick). The Furthermore, it is noted that epi-metal layers as thin as 40 nm piezoelectric coefficients and elastic constants of Sc0.12Al0.88N can be successfully grown with < 20% deviation from the ideal are estimated based on the Sc composition of ScAlN films [11], metal [6]. [12]. The fundamental thickness mode is induced at the B. Fabrication Process resonant frequency of 4.6 GHz. The second and third-order The sequential steps of the microfabrication process are resonance modes are picked up at resonant frequencies of 11.96 described in Fig.3. First, 3 µm thick of photoresist (PR) is used and 18.99 GHz. Fig.4(b) shows the measured wide-band for etch mask and patterned by maskless aligner (MLA). 400 nm response of the Y11 magnitude fitted with Mason’s model at the thick single-crystal ScAlN piezoelectric layer is etched by Cl3- frequency range from 1-20 GHz. Mason’s model can be utilized based thermal inductively coupled plasma (ICP) to expose the for the FBAR device to characterize the electrical and TABLE I. ELECTROMECHANICAL PARAMETERS EXTRACTED FROM MBVD MODEL FITTING OF SCALN FBAR RESONATOR. ퟐ ퟐ fres (GHz) fs (GHz) fp (fF) Co (fF) Cm (fF) Lm (nH) Rm (Ω) Qm 풌풕 (%) 풇 × Q (Hz) 풇 × Q × 풌풕 (GHz) 1st Mode 4.6 4.64 4.66 203 2.54 463 11 1230 1 5.6× 1012 56.55 2nd Mode 11.84 11.17 11.81 203 4.91 37.4 13 212 1.86 2.5× 1012 46.82 3rd Mode 19 18.8 19.1 203 7.59 9.3 9 123 3.56 2.3× 1012 83.28 -10 R L C 1st Mode Measured (a) m3 m3 m3 -20 2nd Mode Mason’s Model Rm2 Lm2 Cm2 -30 3rd Mode Rm1 Lm1 Cm1 -40 Magnitude (dB) Magnitude -50 CO 11 Y -60 R (a) O -70 -31 -20 0 2 4 6 8 10 12 14 16 18 20 (b) Measured Measured (c) Frequency (GHz) -33 MBVD -40 MBVD 8.E+03 -35 fres1 = 4.6 GHz -60 4.E+02 -37 -80 Magnitude (dB) Magnitude -39 Phase (degree)Phase f = 11.96 GHz 11 2.E+01 res2 Y -100 -41 1st Order Mode 1st Order Mode 1.E+00 -43 -120 Magnitude (dB) Magnitude 4.1 4.3 4.5 4.7 4.9 5.1 4.1 4.3 4.5 4.7 4.9 5.1 11 Y Frequency (GHz) Frequency (GHz) 5.E-02 -24 -110 f = 18.99 GHz (b) res3 (d) Measured Measured (e) MBVD MBVD 3.E-03 -26 -120 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) -28 -130 Magnitude (dB) Magnitude Phase (degree)Phase Fig.4.
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