Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation Shtyrkova, Katia, et al. “Integrated CMOS-Compatible Q-Switched Mode-Locked Lasers at 1900nm with an on-Chip Artificial Saturable Absorber.” Optics Express 27, 3 (February 2019): 3542 © 2019 Optical Society of America As Published http://dx.doi.org/10.1364/OE.27.003542 Publisher The Optical Society Version Final published version Citable link https://hdl.handle.net/1721.1/124414 Terms of Use Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. Vol. 27, No. 3 | 4 Feb 2019 | OPTICS EXPRESS 3542 Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber 1,2 1 1,3 KATIA SHTYRKOVA, PATRICK T. CALLAHAN, NANXI LI, EMIR SALIH 1,4 1 1 MAGDEN, ALFONSO RUOCCO, DIEDRIK VERMEULEN, FRANZ X. 1,5 1 1 KÄRTNER, MICHAEL R. WATTS, AND ERICH P. IPPEN 1Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA 2Presently with MIT Lincoln Laboratory, 244 Wood Street, Lexington, MA 02421, USA 3John A. Paulson School of Engineering and Applied Sciences, Harvard University, 9 Oxford Street, Cambridge, MA 02138, USA 4Current address: Koç University, College of Engineering, Department of Electrical and Electronics Engineering, Rumelifeneri Yolu Sarıyer 34450 Istanbul, Turkey 5Center for Free-Electron Laser Science at Deutsches Electronen Synchrotron (DESY), Department of Physics and Center for Ultrafast Imaging, University of Hamburg, Hamburg 22761, Germany *
[email protected] Abstract: We present a CMOS-compatible, Q-switched mode-locked integrated laser operating at 1.9 µm with a compact footprint of 23.6 × 0.6 × 0.78mm.