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The decay of an argon plasma in the gap of a thermionic converter as a function of time was studied with dif- ferent biases applied to the anode relative to the cath- ode. Specifics of the simulation setup are discussed in the Methods section. It was found that the plasma life- time is strongly dependent on the anode bias. Thereby a characteristic of the IV-curve was identified that allows extraction of the difference in electrode work functions. Furthermore, simulations were performed in both 1D and Figure 2. Schematic of a plasma-based thermionic diode. The 2D, and it was found that the decay characteristics of the diode consists of two parallel plates, the cathode (left) and plasma are strongly dependent on the dimensionality of anode (right). Arrows indicate the direction of motion of the system. The Results section describes the differences thermionically emitted electrons as they travel from the cath- in the plasma decay under different anode biases as well ode to the anode. An argon plasma is present in the inter- as the differences that arise from dimensionality. In the electrode gap to neutralize the space charge formed by the emitted electrons, and thereby facilitates the flow of current. Discussion section the plasma sheaths are studied and the origin of the dimensional dependence is explored. efficiency of the converter [2]. This is due to the large Theoretical considerations neutral scattering cross section of cesium atoms for low energy electrons. As a solution to this problem, using inert gas plasmas have been suggested where the Ram- A well documented characteristic of pulsed inert-gas sauer minimum makes these gases mostly transparent to plasma thermionic converters is that once the plasma low energy electrons. Using an inert gas plasma requires producing pulse is turned off, the plasma sheath in front the plasma ignition be engineered to be very energy ef- of the cathode rapidly inverts from an ion-accelerating to ficient. This can be achieved by including highly biased an ion-retaining (electron-rich) sheath [21, 22]. This is a auxiliary electrodes that are optimally placed to produce desirable situation, since if instead the plasma producing an inert gas plasma in the gap [17, 18]. Another way is pulse created a dense enough plasma to completely miti- to apply short high voltage pulses across a diode [19, 20]. gate the thermionic space charge barrier for an extended As electrons accelerate towards the anode they collide amount of time, it means for some number of produced with neutral atoms in the gap, causing ionization and ions their decay doesn’t affect the diode current. There- eventually striking a plasma in the gap. A schematic fore, the energy used to create those ions was wasted. It of this is shown in Fig. 2. When the plasma producing consequently would be more energy efficient to pulse for pulse is turned off, the plasma starts to slowly decay to a shorter amount of time and instead re-pulse more fre- the electrodes (the dynamics of this decay are discussed quently so that each produced ion has a maximal impact in detail later). During this time, a large portion of the on the power producing diode current. For this reason, space charge cloud from thermionically emitted electrons we can assume that during the power producing phase, is neutralized and the diode current remains high. Once the cathode sheath will always be ion-retaining. Accord- the plasma density has decayed to such a level where it ing to McVey (1990) [23] the electron and ion currents can no longer support high diode current, the plasma ig- can be described by the following equations: nition pulse is repeated to start the process over again. 2 eV By keeping a very low duty cycle of on-to-off phases of the J = J exp c J (1a) e 3 R kT − re ignition pulse, high time-averaged diode current can be c sustained with relatively little energy spent to repeatedly eVc J = (J /2 J )exp (1b) strike the plasma [21]. i i − ri kT c While pulsed argon plasma thermionics have been studied concerning the energy required to repeatedly where JR is the Richardson current emitted from the strike the plasma, little is known about the impact of cathode, Vc is the height of the sheath in front of the output voltage on the decay dynamics of the plasma, or cathode, Tc is the cathode temperature, and Jr i,e are { } phrased differently, how the relative bias between cath- the random ion/electron currents given by, ode and anode affects the average diode current. Un- derstanding the IV-curve of a pulsed plasma converter is en 8kBT i,e Jr i,e = { } , (2) important since often this is the only diagnostic avail- { } 4 s πM i,e able which researchers have to deduce several system { } parameters such as cathode and anode work functions, where e is the electron charge, n the plasma density, T plasma density, gap, etc. In the following, this ques- the species temperature in the bulk plasma, kB Boltz- tion is explored using particle-in-cell (PIC) simulations. mann’s constant, and M the particle mass. Notice that 3 the same barrier, Vc, that hinders thermionically emit- Using typical values of the diode parameters d =0.5 mm, ted electrons from entering the plasma also retains ions Tc = 1100 ◦C, Ti = 700 ◦C, d/λ 2 and Js/J0 2 the in the bulk plasma. This clearly indicates that achieving pulse repetition period is found to≈ be 4τ 50 µ≈s. For higher diode currents also leads to faster ion decay. this reason the diode current density was averaged≈ over a The direction of the anode sheath depends on the ap- 50 µs time interval of the plasma decay in the simulations plied bias. Warner and Hansen (1967) [24] noted that if discussed in this article. the anode vacuum potential is sufficiently low (compared to the cathode’s), the anode sheath will be electron- retaining (ion-accelerating). In this configuration the ion Methods current at the anode is simply given by Ji =2Jri. Seeing as the lack of an anode barrier doesn’t increase the diode The simulations discussed in this article were per- current, this configuration only serves to deplete the ion formed with an adapted version of the PIC code Warp density, leading to shorter plasma lifetimes and conse- [25–27]. Specialized electrostatic field solvers were writ- quently lower time-averaged currents. Clearly, a more ten to directly solve Poisson’s equation for the goeme- favorable configuration is to also have an ion-retaining try of problems studied here. The 1D solver uses sheath on the anode side, which similarly as before gives, Gaussian elimination to efficiently solve the 1D Poisson equation[28] while the 2D solver uses superLU[29] to de- compose the finite difference matrix and quickly solve the J =2J (3a) e re linear system. This was found to be much faster than the eV J = (J /2+ J )exp a . (3b) multigrid solver implemented in Warp. MCC handling of i i ri kT a particle collisions[30] was added and extensively bench- If we assume a perfectly neutral and uniform plasma marked against the results of Turner et al. (2013)[31] to without sheaths, an electric field will exist in the gap with ensure accuracy (see Supplemental Material). The argon cross-sections parameterized by Phelps (1994)[32] were E = (Vc Va)/d, where d is the interelectrode gap dis- tance. This− field vanishes when V = V or equivalently used through the LXCat Phelps database, including elas- c a tic scattering processes as well as ion-neutral charge ex- (see Fig. 9 of Ref. [13]) when Vout = φc φa. Although this argument serves to form intuition, in− a real system change. All simulations were done with spatial resolution plasma sheaths will be present and their heights will be of 0.7 µm. This value was chosen as it is at least 30% less affected by the energy distribution of the plasma parti- than the Debye length of the densest plasma simulated, cles. Seeing as the sheaths determine the plasma decay which was 1.03 µm. The PIC timestep was chosen as the rate, correctly calculating their properties are vital to ob- maximum value such that the CFL condition is still satis- taining an accurate picture of the plasma decay. For this fied, assuming a maximum electron energy of 5 eV (much higher than the average energy simulated). This resulted reason PIC simulations were used since the first principle 13 nature of these calculations provide the required accuracy in a timestep of 6.15 10− s. The 1D simulations in- jected 10 macroparticles× per timestep and assumed an in describing the plasma sheaths. The PIC simulations 2 discussed in the following sections show that the criti- emission area of 1 m . The macro-particle weighting cal point that leads to the highest time-averaged current was then determined by the Richardson saturation cur- corresponds to the flat-band condition. rent for the temperature conditions simulated. The 2D The approximate plasma decay constant at flat-band simulations used 24 cells in the x-direction from which was derived by Rasor (1991) [13], as 1 macro-particle was emitted per cell every timestep. The y-length was taken as 1 m for the calculation of Tc/Ti the emission area and consequently the macro-particle T 2J /J0 τ =2τ i s , (4) weight. In 1D (2D) the initial plasma density was sim- i T 3 d c "1+ 8 λ # ulated with 1000 (100) macro-particles per cell. Particle splitting was implemented to continuously ensure suffi- where τi is the ion crossing time, d is the gap distance, ciently high particle count per cell during the plasma λ the electron mean free path, Js the Richardson satu- decay. The particle splitting algorithm ran every 500 ration current density emitted from the cathode, J0 the simulation steps. It identified cells in which the particle initial diode current density, Ti the average ion temper- count was less than 100 (10) for 1D (2D) and doubled ature in the gap and Tc the cathode temperature. The the particle count in those cells by cloning all its parti- ion crossing time, τi = d/v¯ can be estimated by noting cles while halving the weight. A convergence study was that the ion current is given by Ji = nev¯, where n is the plasma density andv ¯ is the drift velocity of the ions done to ensure simulation parameters were appropriately (Eq. 2), giving chosen as shown in the Supplemental Material. The sim- ulations were performed by introducing a quasi-neutral d πM plasma of a specified density between two parallel plates, τ = =4d i . (5) i v¯ 8k T as in the schematic in Fig. 2. The parallel plates are r B i 4 modelled as perfect conductors, thereby creating Dirich- let boundary conditions for the ends of thez ˆ domain and 0 charges are absorbed when entering the conductor do- mains. During 2D simulations, periodic boundary condi- 0 d d tions are used for thex ˆ domain. The conductor plate on vacuum the left of the computational domain will be referred to 0 0 0 as the ‘cathode’, and is modelled as a thermionic emitter
i.e. electrons are emitted from the face of the conductor. 0 -cathode 0
The emitted electrons have velocities sampled from the potential difference (V) difference potential thermionic emission distribution derived in the Supple- 0 mental Material. The conductor plate on the right of the 0
computational domain will be referred to as the ‘anode’. 0 0 0 0 0 0 In all simulations the cathode vacuum potential is used as the zero potential reference while the anode’s vacuum po- tential is varied in order to study the impact of changing Figure 3. Simulation results for a system with a 500 µm in- terelectrode gap, 10 Torr background argon, initial plasma the output voltage of the thermionic diode. The simula- 12 −3 2 density of 10.2 × 10 cm and 2.2 A/cm thermionic cur- tions are seeded with a neutral argon plasma of specified ◦ rent emitted from the cathode (Tc = 1100 C and φc = 2.1 peak density. The seeded plasma density follows a sine- eV). The diode current as a function of time is shown in the distribution that peaks in the middle of the gap. Simula- top panel for different anode potentials. The average plasma tions of plasma ignition indicate that this is close to the density in the gap is shown in the bottom panel. expected plasma density profile (see Supplemental Mate- rial for further details), confirming the same result from Ref. [33]. The seed ions are assumed to be at the neu- suppressed. As the diode output voltage is decreased, tral gas temperature (for simplicity taken as the average moving into the accelerating regime, the diode current of the cathode and anode temperatures) while the seed at the start of the simulation is increased, but the electrons are injected with a temperature equal to the plasma lifetime is significantly decreased. This leads to cathode temperature, an assumption commonly made in a decrease in the diode current as the plasma density modelling the electrons in inert-gas plasma thermionic diminishes. The highest time-averaged diode current is converters, see Ref. [13] for example. This approach has seen when the diode is in the flat-band configuration, as two main shortcomings, namely, in a real pulsed mode shown in Fig. 4. The same simulations were done with TEC the plasma particles would have non-zero drift ve- different initial plasma densities for which the time- locity due to the ignition pulse and the particle density averaged diode current is also shown in Fig. 4. It was at the electrode surfaces are not as low as predicted by found in all simulated cases that the time-averaged cur- the sine function. Nonetheless this approach is used to avoid the computationally intractable problem of simu- lating multiple pulse periods. The PIC simulations are evolved up to 50 µs dur- ing which the current through the diode is continuously − − tracked, along with several other quantities such as the − spatially resolved plasma density and electrostatic po- tential. Simulations were performed varying several as- pects of the system including the spacing between the electrodes, the density of the initial plasma, the current density emitted from the cathode, and the density of the background neutral gas.