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Navy Electricity and Electronics Training Series
NONRESIDENT TRAINING COURSE SEPTEMBER 1998 Navy Electricity and Electronics Training Series Module 7—Introduction to Solid-State Devices and Power Supplies NAVEDTRA 14179 DISTRIBUTION STATEMENT A: Approved for public release; distribution is unlimited. Although the words “he,” “him,” and “his” are used sparingly in this course to enhance communication, they are not intended to be gender driven or to affront or discriminate against anyone. DISTRIBUTION STATEMENT A: Approved for public release; distribution is unlimited. PREFACE By enrolling in this self-study course, you have demonstrated a desire to improve yourself and the Navy. Remember, however, this self-study course is only one part of the total Navy training program. Practical experience, schools, selected reading, and your desire to succeed are also necessary to successfully round out a fully meaningful training program. COURSE OVERVIEW: To introduce the student to the subject of Solid-State Devices and Power Supplies who needs such a background in accomplishing daily work and/or in preparing for further study. THE COURSE: This self-study course is organized into subject matter areas, each containing learning objectives to help you determine what you should learn along with text and illustrations to help you understand the information. The subject matter reflects day-to-day requirements and experiences of personnel in the rating or skill area. It also reflects guidance provided by Enlisted Community Managers (ECMs) and other senior personnel, technical references, instructions, etc., and either the occupational or naval standards, which are listed in the Manual of Navy Enlisted Manpower Personnel Classifications and Occupational Standards, NAVPERS 18068. THE QUESTIONS: The questions that appear in this course are designed to help you understand the material in the text. -
Equivalent Circuit of Unsymmetrical Inductance Diode Using Linvill Lumped Model
Scholars' Mine Masters Theses Student Theses and Dissertations 1965 Equivalent circuit of unsymmetrical inductance diode using Linvill lumped model Donald Lawrence Willyard Follow this and additional works at: https://scholarsmine.mst.edu/masters_theses Part of the Electrical and Computer Engineering Commons Department: Recommended Citation Willyard, Donald Lawrence, "Equivalent circuit of unsymmetrical inductance diode using Linvill lumped model" (1965). Masters Theses. 5235. https://scholarsmine.mst.edu/masters_theses/5235 This thesis is brought to you by Scholars' Mine, a service of the Missouri S&T Library and Learning Resources. This work is protected by U. S. Copyright Law. Unauthorized use including reproduction for redistribution requires the permission of the copyright holder. For more information, please contact [email protected]. EQUIV ALBNT CJ.RCUIT OF UNSYMMETRICAL INDUCTANCE DIODE USDJG LINVJLL LUMPED MODEL BY AP'/ r· ol~'- t'\.)J} - / OONALD L~ vJILLYARD J V~ ~~ :;> A THESIS submitted to the faculty of the UNIVERSITY OF MISSOURI AT ROLLA in partial fulfillment of the requirements for the ~gree of 1-W3TER OF SCIENCE IN ELECTRICAL ENGINEERING Rolla, Missouri 1965 Approved By ~/}/)/~~) ~~ ii ABSTRACT Integrated circuit techniques and applications are rapidJ.y changing the electronics industry. A problem common to both state of-the-art approaches to integrated circuit fabrication is that of miniaturizing and intGgrating inductors. It is found that, for a certain range of injection current levels, certain unsymmetrically doped junction diodes have an inductive small-signal impedance. This thesis discusses the theor,y of inductance diodes and applies finite difference equations and the Linvill lumped model to the differential equations that describe their carrier nov.r processes. -
Automatic Gain Control of Transistor Amplifiers
Calhoun: The NPS Institutional Archive Theses and Dissertations Thesis Collection 1955 Automatic gain control of transistor amplifiers Bryan, William L. http://hdl.handle.net/10945/13960 M«nl«ey, California AUTOMATIC GAIN CONTROL OF TRANSISTOR AMPLIFIERS William L* Bxyan 1^ AUTOMATIC GAIN CONTROL OF TRANSISTOR AMPLIFIERS by William Littell Bryan Lieutenant, United States Navy Submitted in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE IN ENGINEERING ELECTRONICS United States Naval Postgraduate School Monterey, California 19 5 5 Tlicsls " •'-'»i;;.;„;'"''"^"'«j This work is accepted as fulfilling the thesis requirements for the degree of * MASTER OF SCIENCE IN ENGINEERING ELECTRONICS from th« United States Naval Postgraduate School PREFACE The rapid progress made in the field of semiconduc- tors since the invention of the transistor seven years ago has widely broadened our theoretical knowledge in the field and greatly increased the potentialities of these devices. Particularly our increasing ability to manxifac- ture reproducible transistors has brought us to the point of designing circuits for specific application to tran- sistors, not just to illustrate the application but rathei* •ngineered to rigid specifications. This paper treats Just such a design, that of obtaining automatic gain control of a transistor amplifier. There has been as yet little published about this difficult problem, and much of the work here presented is believed to be original* The majority of the experimental work connected with this thesis was performed during the author's Industrial Experience Tour while at Lenkurt Electric Company, San Carlos, California, and he is indebted to them for their cooperation and assistance. -
Low Noise Dual Gate Enhancement Mode MOSFET with Quantum Valve in the Channel
Proceedings of the World Congress on Electrical Engineering and Computer Systems and Science (EECSS 2015) Barcelona, Spain, July 13-14, 2015 Paper No. 153 Low Noise Dual Gate Enhancement Mode MOSFET with Quantum Valve in the Channel Sam Halilov, Anass Dahany, Sam Mil’shtein University Ave 1, University of Massachusetts Department of Electrical and Computer Engineering Lowell, MA 01854, USA Abstract- A proposed Si-based series multi-gate E-MOSFET is discussed in terms of its design, static and dynamic transport properties and noise figure. In its simplest realization, the design involves two gates in series comprising an extra n(p)-doped junction in the p(n)-channel. The role of the nano-scale junction is twofold: to minimize the Miller effect in the enhancement mode to improve the frequency response and to create a quantum well to quench the current noise associated with the carrier velocity fluctuations. While dual-gate depletion structure results in a reduced carrier transition time along the entire channel path, the quantization effects serve as a current noise filter. Similar quantum valve can be realized in the form of a well both in n- and p-channel enhancement mode FET, whereas the majority carriers experience a tunneling through a similar shape barrier. Doping concentration and size of the middle junction are free parameters and can be adjusted to the required figures of merit. AC device simulations confirm the expectations based on the along-the-channel potential profile: enhanced cutoff frequency and higher saturation current are the signatures of the reduced transition and RC-time, whereas the minimum noise figure and transfer functions demonstrate noise filtering capabilities of the state quantization. -
900000 102 03.Pdf
ELECTRONIC URCUlTS 0.WO.IM SEMICONDUCTOR SECTION 3 alphhtical list of oll letter syntnls used herein is GENERAL INFORMATION ON SEMICONDUCTOR CIRCUITS presented below for easy reference. Symbol D.Hmltion 3.1 DEFINITIONS OF LETTER SYMBOLS USED. a Current mnpllficotlon factor (common The letter symbols used in the diagrams ond discus- boa. current gain - Alpha) rims on semiomductor circuits throughout this technicul a FB, a FC, a FE Short-&cult forward current V-afsr manual me those proposed as standard for use in industry by rotlo, atottc volvs the Institute of Rodio Engineers, or ore speciai syrr~hla uib, riic, iio ~,=d!-&~d~h=rt-c!.~t?!+ forwmd not included in the stmdmd. Since some of these symbols currsnc rrrrnsior rviio chmqe from time to time, md new symbols are develop2 to AG AvoUoble qoln cover new devices as the mt changes, m alphabetical Al Current gal- listing of the symbols used herein is wesmted below. It AP Power Goln is rwmmended that this listing be used to obtain the Av Voltoqa goln proper definitions of the symbols employed in this manuol, B ar b Base electrode I"!!?? thcm to assume on erroneous meming. vR common-amlttsr cunent qah - Beta 3.1.1 Con.nuola of symbls. Semiconductm synSc!s ZL' or 'Jbn ~reakdownvoltaqe are made up of c basic letter with subscripts, either lformarly PIE or TIV) alphabetical or numbericol, or bath, in accordmcc with BZ ~m~ss~gnczlbreakdown impedance the fo!!owinq rules: br snnll-algnd breakdown impedance o. A capitol (upper case) letter designates enemoi C or c CO,I.CtOl siocrrcde or curaiiiii circuit wrameters and compcnents, largesignal aevlce CB, CC, CE common boa-, coliecloi, m.2 em:??=:. -
Products Catalog Index
Products Catalog Index PART NO. MANUFACTURER DESCRIPTION URL PRICE 2N5116 National Semiconductor Pro-Electron Transistor Datasheets http://www.searchdatasheet.com/2N5116-datasheet.html QUOTE 2N5116 National Semiconductor JFET SWitches/Choppers http://www.searchdatasheet.com/2N5116-datasheet.html QUOTE 2N5116 Philips Semiconductors / P-Channel JFET http://www.searchdatasheet.com/2N5116-datasheet.html QUOTE NXP Semiconductors 2N5116 Siliconix FET Design Catalogue 1979 http://www.searchdatasheet.com/2N5116-datasheet.html QUOTE 2N5116 Siliconix MOSPOWER Design Data Book 1983 http://www.searchdatasheet.com/2N5116-datasheet.html QUOTE 2N5116 Vishay Telefunken TRANS JFET P-CH 25MA 3TO-206AA http://www.searchdatasheet.com/2N5116-datasheet.html QUOTE 2N5135 Central Semiconductor NPN EPOXY - SWITCHING AND http://www.searchdatasheet.com/2N5135-datasheet.html QUOTE GENERAL PURPOSE 2N5135 Continental Device India Semiconductor Device Data Book 1996 http://www.searchdatasheet.com/2N5135-datasheet.html QUOTE Limited 2N5135 Fairchild Semiconductor Full Line Condensed Catalogue 1977 http://www.searchdatasheet.com/2N5135-datasheet.html QUOTE 2N5135 Motorola Motorola Semiconductor Datasheet Library http://www.searchdatasheet.com/2N5135-datasheet.html QUOTE 2N5135 National Semiconductor NPN Transistors http://www.searchdatasheet.com/2N5135-datasheet.html QUOTE 2N5135 National Semiconductor General Purpose Amplifiers and Switches http://www.searchdatasheet.com/2N5135-datasheet.html QUOTE 2N5135 National Semiconductor Pro-Electron Transistor Datasheets http://www.searchdatasheet.com/2N5135-datasheet.html -
The Transistor
Chapter 1 The Transistor The searchfor solid-stateamplification led to the inventionof the transistor. It was immediatelyrecognized that majorefforts would be neededto understand transistorphenomena and to bring a developedsemiconductor technology to the marketplace.There followed a periodof intenseresearch and development, duringwhich manyproblems of devicedesign and fabrication, impurity control, reliability,cost, and manufacturabilitywere solved.An electronicsrevolution resulted,ushering in the eraof transistorradios and economicdigital computers, alongwith telecommunicationssystems that hadgreatly improved performance and that were lower in cost. The revolutioncaused by the transistoralso laid the foundationfor the next stage of electronicstechnology-that of silicon integratedcircuits, which promised to makeavailable to a massmarket infinitely more complexmemory and logicfunctions that could be organizedwith the aid of softwareinto powerfulcommunications systems. I. INVENTION OF THE TRANSISTOR 1.1 Research Leading to the Invention As World War II was drawing to an end, the research management of Bell Laboratories, led by then Vice President M. J. Kelly (later president of Bell Laboratories), was formulating plans for organizing its postwar basic research activities. Solid-state physics, physical electronics, and mi crowave high-frequency physics were especially to be emphasized. Within the solid-state domain, the decision was made to commit major research talent to semiconductors. The purpose of this research activity, according -
The MOS Tetrode Transistor Is Studied in This Project
AN ABSTRACT OF THE THESIS OF Thawee Limvorapun for the Master of Science (Name) (Degree) in Electrical and Electronics Engineering (Major) 4; -- 7 -- presented on . (Date) Title: THE MOS TETROD.° mr""TcTcm"" Redacted for Privacy Abstract approved: James C. Lodriey The MOS tetrode transistor is studied in this project. This device is ideally suited for high frequency and switching application. In effect it is the solid state analogy of a multigrid vacuum tube performing a very useful multigrid function. A new structure is developed for p-channel 10 ohm-cm. silicon substrate of (111) crystal orientation. This structure consists of an aluminum con- trol gate G1 buried in the pyrolytic SiO2, or E-gun evapo- ration SiO with thermal oxide for the control gate in- 2' sulator. An offset gate G2 produces another channel L2 and causes a longer pinchoff region in the device. The drain breakdown can be maximized so as to approach bulk breakdown as the result of the redistribution of the surfacefield. is very low, ap- The Miller feedback capacitance CGl-D proaching values similar to those of the vacuum pentodes. This paper describes the design, artwork, pyrolytic SiO and E-gun evaporation SiO process. The V-I 2 2 characteristics, dynamic drain resistance, capacitance, small signal equivalent circuit and large signal limitation, and drain breakdown voltage are also discussed. THE MOS TETRODE TRANSISTOR by Thawee Limvorapun A THESIS submitted to Oregon State University in partial fulfillment of the requirements for the degree of Master of Science June 1973 APPROVED: Redacted for Privacy Associa e rofessor of Electrical andEleC-E-Anics Engineering in charge of major Redacted for Privacy Head of Department of Electrical and Electronics Engineering Redacted for Privacy Dean of Graduate School Date thesis is presented 6- 7- 7 2 Typed by Erma McClanathan for Thawee Limvorapun ACKNOWLEDGMENTS I wish to express my sincere appreciation to my advisor, Professor James C. -
"Reading Transistor Markings" by Electronics Express
Source: Electronics Express, http://www.elexp.com/hints_tips.aspx Reading Transistor Markings Most transistor markings follow one of these codes: JEDEC, JIS or Pro-Electron. For ICs, look for known numbers (e.g. 741, 4001, 7400) between the prefix and the suffix. Don't confuse it with the date code. ICs typically have two numbers: The part number and the date code. 1. Joint Electron Device Engineering Council (JEDEC) These part numbers take the form: digit, letter, sequential number, [suffix] The letter is always 'N', and the first digit is 1 for diodes, 2 for transistors, 3 for four-leaded devices, and so forth. But 4N and 5N are reserved for opto-couplers. The sequential numbers run from 100 to 9999 and indicate the approximate time the device was first made. If present, a suffix could indicate various things. For example, a 2N2222A is an enhanced version of a 2N2222. It has higher gain, frequency, and voltage ratings. Always check the data sheet. Examples: 1N914 (diode), 2N2222, 2N2222A, 2N904 (transistors). NOTE: When a metal-can version of a JEDEC transistor is remade in a plastic package, it is often given a number such as PN2222A which is a 2N2222A in a plastic case. 2. Japanese Industrial Standard (JIS) These part numbers take the form: digit, two letters, sequential number, [optional suffix] Digits are 1 for diodes, 2 for transistors, and so forth. The letters indicate the type and intended application of the de- vice according to the following code: SA: PNP HF transistor SB: PNP AF transistor SC: NPN HF transistor SD: NPN AF transistor SE: Diodes SF: Thyristors SG: Gunn devices SH: UJT SJ: P-channel FET SK: N-channel FET SM: Triac SQ: LED SR: Rectifier SS: Signal diodes ST: Avalanche diodes SV: Varicaps SZ: Zener diodes The sequential numbers run from 10-9999. -
Reading Transistor Markings
Reading Transistor Markings Most transistor markings follow one of these codes: JEDEC, JIS or Pro-Electron. For ICs, look for known numbers (e.g. 741, 4001, 7400) between the prefix and the suffix. Don't confuse it with the date code. ICs typically have two numbers: The part number and the date code. 1. Joint Electron Device Engineering Council (JEDEC) These part numbers take the form: digit, letter, sequential number, [suffix] The letter is always 'N', and the first digit is 1 for diodes, 2 for transistors, 3 for four-leaded devices, and so forth. But 4N and 5N are reserved for opto-couplers. The sequential numbers run from 100 to 9999 and indicate the approximate time the device was first made. If present, a suffix could indicate various things. For example, a 2N2222A is an enhanced version of a 2N2222. It has higher gain, frequency, and voltage ratings. Always check the data sheet. Examples: 1N914 (diode), 2N2222, 2N2222A, 2N904 (transistors). NOTE: When a metal-can version of a JEDEC transistor is remade in a plastic package, it is often given a number such as PN2222A which is a 2N2222A in a plastic case. 2. Japanese Industrial Standard (JIS) These part numbers take the form: digit, two letters, sequential number, [optional suffix] Digits are 1 for diodes, 2 for transistors, and so forth. The letters indicate the type and intended application of the de- vice according to the following code: SA: PNP HF transistor SB: PNP AF transistor SC: NPN HF transistor SD: NPN AF transistor SE: Diodes SF: Thyristors SG: Gunn devices SH: UJT SJ: P-channel FET SK: N-channel FET SM: Triac SQ: LED SR: Rectifier SS: Signal diodes ST: Avalanche diodes SV: Varicaps SZ: Zener diodes The sequential numbers run from 10-9999. -
Chapter-3 Bipolar Junction Transistors
Bipolar Junction Transistors 1 Chapter-3 Bipolar Junction Transistors Contents Bipolar Junction Transistors: Structure, typical doping, Principle of operation, concept of different configurations. Detailed study of input and output characteristics of common base and common emitter configuration, current gain, comparison of three configurations. Concept of load line and operating point Need for biasing and stabilization, voltage divider biasing, Transistor as amplifier: RC coupled amplifier and frequency response Transistor as Switch Specification parameters of transistors and type numbering 3.1 Introduction The invention of the BJT in 1948 at the Bell Telephone Laboratories ushered in the era of solid-state circuits, which led to electronics changing the way we work, play, and indeed, live. The invention of the BJT also eventually led to the dominance of information technology and the emergence of the knowledge-based economy. The transistor is the main building block “element” of electronics. It is a semiconductor device and it comes in two general types: the Bipolar Junction Transistor (BJT) and the Field Effect Transistor (FET). Here we will discuss the structure and operation of the BJT and also describe the different BJT configurations.We also explain amplifying and switching action of BJT. 3.2 Structure and Principle of Operation Transistor is a three terminal active device which transforms current flow from low resistance path to high resistance path. This transfer of current through resistance path, given the name to the device ‘transfer resistor’ as transistor. Transistors consists of junctions within it, are called junction transistors. The bipolar junction transistor (BJT) is a three terminal device consists of two P-N junctions connected back to back. -
Semiconductor Color and Unusual Coding Shemas
Semiconductor Color and unusual Coding Shemas Section 1: Main Index + Tables Section 2: Partially selection by Company {drawing/Image} 2 Legs Devices 3 Legs Devices 4 Legs Devices > 4 Legs Devices Section 3: Selection by Outline (Package + Symbols) Section 3.a: Trough Hole Devices 2-Legs { Shaped , Glass based Package { Shaped , Plastic Package ( ) Shaped , Plastic Package Section 3.b: Surface mounted Devices (SMD) { Shaped , Glass based Package Section 1 : Main Index ■ Removed Markings / Double Markings / Special Markings ► Fuba F ► Motorola OEM+Mask Sets F ► Renault F ■ Devices with 2 Legs ► Various ….. Anything Else & Unknown F ► Various SOD-80 // LL34 Diodes (Mini MELF) F ► JEDEC /Pro Electron/JIS …... Diodes F ► GDR (DDR) Bauform B Diodes F L2/13 Diodes F SA4.. Series Diodes F Thermistor F ► Russia/CSSR Diodes F ► AEG Diodes F Selen Rectifer F ► ITT …… F ► Kieler Howldstwerke …… F ► Motorola Case 226 MBD… F ► NEC …… F ► Origin Electric ....... F ► Panasonic DO-34 MA4 / MAZ4… Zener F SOD-51 MA2… Zener F DO-34 MA2C029xx F ► Sanken …… F ► Semitec Varistors F E-Series F F-Series F ► Shindengen AX-… Varistors F AX06 Varistors F ► Siemens SOD-123 // SOD-323 Diodes F Selen Rectifier F Selen Pass Trough Diodes F Temperature Sensor K274 F ► Sony Diodes F ► Telefunken SOD-23 HF-Diodes F ► Tesla ……. F PTC/NTC F ► Tewa Diodes F ► Toshiba …… F ► Valvo DO-35 Diodes F OA-xx Diodes F ► Vishay DO-213 Diodes F SOD-80 // Melf Diodes F ► Voltronics Diodes F ÆContinued on next Page: ■ Devices with 3 Legs ► Various Anything Else & Unknown F ► Russia Transistors Real Examples F 4 DOT Color Code F 2 DOT Color Code F 2/3 DOT Color Code F Marking Orientation F Special Symbol Marking F K(T,..)… Series Marking F KT315 / KT361 F Diodes F ► Arlt Electronics F ► Bell Labs Historical Transistors F ► Ferranti SOT-23 // Micro-E F ► Sanken …… F ► Sanken SOT-23 F ► Shindengen S2RC.