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NIS5132 Series +12 Volt Electronic Fuse NIS5132 Series +12 Volt Electronic Fuse The NIS5132 is a cost effective, resettable fuse which can greatly enhance the reliability of a hard drive or other circuit from both catastrophic and shutdown failures. It is designed to buffer the load device from excessive input voltage which can damage sensitive circuits. It also includes an overvoltage http://onsemi.com clamp circuit that limits the output voltage during transients but does not shut the unit down, thereby allowing the load circuit to continue 3.6 AMP, 12 VOLT operation. Two thermal options are available, latching and auto−retry. ELECTRONIC FUSE Features • Integrated Power Device • Power Device Thermally Protected • No External Current Shunt Required DFN10 • 9 V to 18 V Input Range CASE 485C • 44 mW Typical • Internal Charge Pump MARKING DIAGRAM • Internal Undervoltage Lockout Circuit • Internal Overvoltage Clamp (MN1 and MN2 versions) 1 Pin Function 32 1 GND • G ESD Ratings: Human Body Model (HBM); 2000 V AYW 2 dv/dt G Machine Model (MM); 200 V 3 Enable/Fault • These Devices are Pb−Free and are RoHS Compliant 4 ILIMIT 5NC Typical Applications 6−10 SOURCE 11 (flag) VCC • Hard Drives • Mother Board Power Management 32 = Latching Version with VClamp 32B = Latching Version without VClamp 32H = Auto−Retry Version with VClamp A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the ordering information section on page 10 of this data sheet. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: July, 2014 − Rev. 10 NIS5132/D NIS5132 Series VCC Charge Enable Pump ENABLE/ FAULT SOURCE Thermal Current Shutdown Limit ILIMIT UVLO dv/dt Voltage dv/dt Clamp* Control (*MN1 and MN2 versions) GND Figure 1. Block Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Pin Function Description 1 Ground Negative input voltage to the device. This is used as the internal reference for the IC. 2 dv/dt The internal dv/dt circuit controls the slew rate of the output voltage at turn on. It has an internal capacitor that allows it to ramp up over a period of 2 ms. An external capacitor can be added to this pin to increase the ramp time. If an additional time delay is not required, this pin should be left open. 3 Enable/Fault The enable/fault pin is a tri−state, bidirectional interface. It can be used to enable or disable the output of the device by pulling it to ground using an open drain or open collector device. If a thermal fault occurs, the voltage on this pin will go to an intermediate state to signal a monitoring circuit that the device is in thermal shutdown. It can also be connected to another device in this family to cause a simultaneous shutdown during thermal events. 4 ILimit A resistor between this pin and the source pin sets the overload and short circuit current limit levels. 6−10 Source This pin is the source of the internal power FET and the output terminal of the fuse. 11 (belly pad) VCC Positive input voltage to the device. MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage, operating, steady−state (VCC to GND, Note 1) VIN −0.6 to 18 V Transient (100 ms) −0.6 to 25 q ° Thermal Resistance, Junction−to−Air JA C/W 0.1 in2 copper (Note 2) 227 0.5 in2 copper (Note 2) 95 q ° Thermal Resistance, Junction−to−Lead (Pin 1) JL 27 C/W q ° Thermal Resistance, Junction−to−Case JC 20 C/W ° Total Power Dissipation @ TA = 25 C Pmax 1.3 W Derate above 25°C 10.4 mW/°C ° Operating Temperature Range (Note 3) TJ −40 to 150 C ° Nonoperating Temperature Range TJ −55 to 155 C ° Lead Temperature, Soldering (10 Sec) TL 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Negative voltage will not damage device provided that the power dissipation is limited to the rated allowable power for the package. 2. 1 oz. copper, double−sided FR4. 3. Thermal limit is set above the maximum thermal rating. It is not recommended to operate this device at temperatures greater than the maximum ratings for extended periods of time. http://onsemi.com 2 NIS5132 Series m W ° ELECTRICAL CHARACTERISTICS (Unless otherwise noted: VCC = 12 V, CL = 100 F, dv/dt pin open, RLIMIT = 10 , Tj = 25 C unless otherwise noted.) Characteristics Symbol Min Typ Max Unit POWER FET Delay Time (enabling of chip to ID = 100 mA with 1 A resistive load) Tdly 220 ms Kelvin ON Resistance (Note 4) RDSon 35 44 55 mW ° TJ = 140 C (Note 5) 62 Off State Output Voltage Voff 190 300 mV R (VCC = 18 Vdc, VGS = 0 Vdc, RL = ) Output Capacitance (VDS = 12 Vdc, VGS = 0 Vdc, f = 1 MHz) 250 pF ° 2 Continuous Current (TA = 25 C, 0.5 in pad) (Note 5) ID 3.6 A ° (TA = 80 C, minimum copper) ID 1.7 THERMAL LATCH ° Shutdown Temperature (Note 5) TSD 150 175 200 C ° Thermal Hysteresis (Decrease in die temperature for turn on, does not apply THyst 45 C to latching parts) UNDER/OVERVOLTAGE PROTECTION Output Clamping Voltage (Overvoltage Protection) (VCC = 18 V) (Note 6) VClamp 14 15 16.2 V Undervoltage Lockout (Turn on, voltage going high) VUVLO 7.7 8.5 9.3 V UVLO Hysteresis VHyst − 0.80 − V CURRENT LIMIT W Kelvin Short Circuit Current Limit (RLimit = 15.4 , Note 7) ILim−SS 2.75 3.44 4.25 A W Kelvin Overload Current Limit (RLimit = 15.4 , Note 7) ILim−OL 4.6 A dv/dt CIRCUIT Output Voltage Ramp Time (Enable to VOUT = 11.7 V) tslew 0.5 0.9 1.8 ms Maximum Capacitor Voltage Vmax VCC V ENABLE/FAULT Logic Level Low (Output Disabled) Vin−low 0.35 0.58 0.81 V Logic Level Mid (Thermal Fault, Output Disabled) Vin−mid 0.82 1.4 1.95 V Logic Level High (Output Enabled) Vin−high 1.96 2.64 3.30 V High State Maximum Voltage Vin−max 3.40 4.30 5.2 V Logic Low Sink Current (Venable = 0 V) Iin−low −17 −25 mA Logic High Leakage Current for External Switch (Venable = 3.3 V) Iin−leak 1.0 mA Maximum Fanout for Fault Signal (Total number of chips that can be Fan 3.0 Units connected to this pin for simultaneous shutdown) TOTAL DEVICE Bias Current (Operational) IBias 1. 8 2.5 mA Bias Current (Shutdown) IBias 1.0 mA Minimum Operating Voltage (Notes 5 and 8) Vmin 7.6 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse test: Pulse width 300 ms, duty cycle 2%. 5. Verified by design. 6. VClamp only in MN1 & MN2 versions. 7. Refer to explanation of short circuit and overload conditions in application note AND8140. 8. Device will shut down prior to reaching this level based on actual UVLO trip point. http://onsemi.com 3 NIS5132 Series 60 50_C 50 25_C 40 30 POWER (W) 20 _ 10 80 C 0 0.1 1 10 100 1000 10000 100000 TIME (ms) Figure 2. Power Dissipation vs. Thermal Trip Time 11 10 +12 V VCC 9 8 SOURCE 7 6 NIS5132 RS 4 ILIMIT 3 ENABLE GND dv/dt LOAD ENABLE 12 GND Figure 3. Application Circuit with Direct Current Sensing 11 10 +12 V VCC 9 8 SOURCE 7 6 NIS5132 RS 4 ILIMIT 3 ENABLE GND dv/dt LOAD ENABLE 12 GND Figure 4. Application Circuit with Kelvin Current Sensing http://onsemi.com 4 NIS5132 Series VCC VCC SOURCE SOURCE RS NIS5135 NIS5132 I ILIMIT LIMIT ENABLE ENABLE dv/dt GND GND dv/dt LOAD LOAD ENABLE Figure 5. Common Thermal Shutdown http://onsemi.com 5 NIS5132 Series 9 0.86 8.8 0.84 8.6 0.82 8.4 0.8 8.2 0.78 HYST (V) HYST UVLO (V) 8 0.76 7.8 7.6 0.74 7.4 0.72 −50 −25 0 25 50 75 100 125 150 −50 −25 0 25 50 75 100 125 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 6. UVLO Turn−On Figure 7. UVLO Hysteresis 15.3 1.05 15.2 15.1 1 15 14.9 0.95 14.8 VOLTAGE (V) VOLTAGE RAMP TIME (ms) RAMP 14.7 0.9 14.6 14.5 0.85 −50 −25 0 25 50 75 100 125 150 −50 −25 0 25 50 75 100 125 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 8. Output Clamping Voltage Figure 9. Output Voltage dv/dt Rate (MN1 & MN2 only) 1600 1200 800 CURRENT (mA) CURRENT 400 0 0.5 0.6 0.7 0.8 FORWARD VOLTAGE (V) Figure 10. Input Transient Response Figure 11. Body Diode Forward Characteristics http://onsemi.com 6 NIS5132 Series 9 10 8 −40°C OL 7 0°C SC ° 25 C 1 6 50°C CURRENT (A) CURRENT (A) CURRENT 85°C 5 4 0.1 0 0.5 1 1.5 2 10 100 1000 2 W COPPER AREA (in ) Rlimit ( ) Figure 12. Thermal Limit vs. Copper Area and Figure 13. Current Limit vs. Rsense for Direct Ambient Temperature Current Sensing 4.5 10 4 OL OL 3.5 3 SC 2.5 SC 1 2 CURRENT (A) CURRENT CURRENT (A) CURRENT 1.5 1 0.5 0 0.1 −50 0 50 100 150 1 10 100 ° W TEMPERATURE ( C) Rsense ( ) Figure 14.
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