Implementing Voltage Controlled Current Source in Electromagnetic Full-Wave Simulation using the FDTD Method Khaled ElMahgoub and Atef Z. Elsherbeni Center of Applied Electromagnetic System Research (CAESR), Department of Electrical Engineering, The University of Mississippi, University, Mississippi, USA.
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[email protected] Abstract — The implementation of a voltage controlled FDTD is introduced with efficient use of both memory and current source (VCCS) in full-wave electromagnetic simulation computational time. This new approach can be used to analyze using finite-difference time-domain (FDTD) is introduced. The VCCS is used to model a metal oxide semiconductor field effect circuits including VCCS or circuits include devices such as transistor (MOSFET) commonly used in microwave circuits. This MOSFETs and BJTs using their equivalent circuit models. To new approach is verified with several numerical examples the best of the authors’ knowledge, the implementation of including circuits with VCCS and MOSFET. Good agreement is dependent sources using FDTD has not been adequately obtained when the results are compared with those based on addressed before. In addition, in most of the previous work the analytical solution and PSpice. implementation of nonlinear devices such as transistors has Index Terms — Finite-difference time-domain, dependent been handled using FDTD-SPICE models or by importing the sources, voltage controlled current source, MOSFET. S-parameters from another technique to the FDTD simulation [2]-[7]. In this work the implementation of the VCCS in I. INTRODUCTION FDTD will be used to simulate a MOSFET with its equivalent The finite-difference time-domain (FDTD) method has gained model without the use of external tools, the entire simulation great popularity as a tool used for electromagnetic can be done using the FDTD.