Thyristor \ Diode Module RRM = I TAV 140 a = VVT 1.28

$Thyristor \ Diode Module RRM = I TAV 140 a = VVT 1.28$

MCMA140PD1200TB

V = 2x 1200 V Thyristor \ Diode Module RRM = I TAV 140 A = VVT 1.28

Phase leg

Part number MCMA140PD1200TB

Backside: isolated

3 1 2 5 4

Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Line rectifying 50/60 Hz ● Isolation Voltage: 4800 V~ ● Planar passivated chip ● Softstart AC motor control ● Industry standard outline ● Long-term stability ● DC Motor control ● RoHS compliant ● Direct Copper Bonded Al2O3-ceramic ● Power converter ● Soldering pins for PCB mounting ● AC power control ● Base plate: DCB ceramic ● Lighting and temperature control ● Reduced weight ● Advanced power cycling

Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191111d © 2019 IXYS all rights reserved MCMA140PD1200TB

Rectifier Ratings Symbol Definition Conditions min. typ. max. Unit

VRSM/DSM max. non-repetitive reverse/forward blocking voltage T VJ = 25°C 1300 V

VRRM/DRM max. repetitive reverse/forward blocking voltage T VJ = 25°C 1200 V

I R/D reverse current, drain current V R/D = 1200 V T VJ = 25°C 100 µA

V R/D = 1200 V T VJ = 140 °C 10 mA

V T forward voltage drop I T = 150 A T VJ = 25°C 1.29 V

I T = 300 A 1.63 V

I T = 150 A T VJ = 125 °C 1.28 V

I T = 300 A 1.70 V

I TAV average forward current T C = 85 °C T VJ = 140 °C 140 A

I T(RMS) RMS forward current 180° sine 220 A

VT0 threshold voltage T VJ = 140 °C 0.85 V for power loss calculation only rT slope resistance 2.8 mΩ

R thJC thermal resistance junction to case 0.22 K/W

RthCH thermal resistance case to heatsink 0.2 K/W

Ptot total power dissipation T C = 25°C 520 W

ITSM max. forward surge current t = 10 ms; (50 Hz), sine T VJ = 45°C 2.40 kA

t = 8,3 ms; (60 Hz), sine VR = 0 V 2.59 kA

t = 10 ms; (50 Hz), sine T VJ = 140 °C 2.04 kA

t = 8,3 ms; (60 Hz), sine VR = 0 V 2.21 kA

I²t value for fusing t = 10 ms; (50 Hz), sine T VJ = 45°C 28.8 kA²s

t = 8,3 ms; (60 Hz), sine VR = 0 V 27.9 kA²s

t = 10 ms; (50 Hz), sine T VJ = 140 °C 20.8 kA²s

t = 8,3 ms; (60 Hz), sine VR = 0 V 20.2 kA²s

CJ junction capacitance VR = V400f = 1 MHz T VJ = 25°C 119 pF

PGM max. gate power dissipation t P = 30 µs T C = 140 °C 10 W

t P = 300 µs 5 W

PGAV average gate power dissipation 0.5 W

(di/dt) cr critical rate of rise of current TVJ = 140°C; f = 50 Hz repetitive, IT = 450 A 150 A/µs

t P = 200 µs; di G /dt=0.45 A/µs;

IG = 0.45 A; V = ⅔ V DRM non-repet., I T = 150 A 500 A/µs

(dv/dt) cr critical rate of rise of voltage V = ⅔ V DRM TVJ = 140°C 1000 V/µs

R GK = ∞; method 1 (linear voltage rise)

VGT gate trigger voltage VD = 6 V TVJ = °C25 1.5 V

TVJ =-40 °C 1.6 V

IGT gate trigger current VD = 6 V TVJ = °C25 150 mA

TVJ =-40 °C 200 mA

VGD gate non-trigger voltage V D = ⅔ V DRM TVJ =140 °C 0.2 V

IGD gate non-trigger current 10 mA

IL latching current tp = 10 µs TVJ =25 °C 200 mA

IG = 0.45 A; di G /dt= 0.45 A/µs

IH holding current VD = 6 V R GK = ∞ TVJ =25 °C 200 mA t gd gate controlled delay time V D = ½ V DRM TVJ =25 °C 2 µs

IG =0.45 A; di G /dt= 0.45 A/µs t q turn-off time V R = 100 V; IT = 150 A; V = ⅔ V DRM TVJ =125 °C 185 µs

di/dt =10 A/µs dv/dt =20 V/µs tp = 200 µs

Package TO-240AA Ratings Symbol Definition Conditions min. typ. max. Unit

I RMS RMS current per terminal 200 A

TVJ virtual junction temperature -40 140 °C

Top operation temperature -40 125 °C

Tstg storage temperature -40 125 °C Weight 81 g

M D mounting torque 2.5 4 Nm M T terminal torque 2.5 4 Nm

dSpp/App terminal to terminal 13.0 9.7 mm creepage distance on surface | striking distance through air dSpb/Apb terminal to backside 16.0 16.0 mm V isolation voltage t = 1 second 4800 V ISOL 50/60 Hz, RMS; IISOL ≤ 1 mA t = 1 minute 4000 V

Part description M = Module C = Thyristor (SCR) M = Thyristor A = (up to 1800V) 140 = Current Rating [A] PD = Phase leg 1200 = Reverse Voltage [V] TB = TO-240AA-1B

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No. Standard MCMA140PD1200TB MCMA140PD1200TB Box 36 512618

Equivalent Circuits for Simulation * on die level T VJ = 140 °C

Thyristor I V0 R0

V 0 max threshold voltage 0.85 V

R0 max slope resistance * 1.6 mΩ

Outlines TO-240AA

3 1 2 5 4

Thyristor

300 20 00 10 5 VR = 0 V 50 Hz, 80% VRRM 250

200 1600

I 2 TVJ = 45°C T ITSM TVJ = 45°C I t 150 10 4 TVJ = 140°C

[A] T = 125°C 2 VJ [A] [A s] 100 140°C 1200 TVJ = 140°C

TVJ = 25°C 0 800 10 3 0.5 1.0 1.5 2.0 0.01 0.1 1 1 2 3 4 5 6 7 8 9 01

VT [V] t [s] t [ms] Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I2t versus time (1-10 s) ITSM: crest value, t: duration

10 1000 200 1: I GT,TVJ = 140°C TVJ = 25°C 2: IGT,TVJ = 25°C 3: IGT,TVJ = -40°C dc = 160 1 0.5 typ. Limit 100 0.4 0.33 VG 3 120 2 tgd ITAVM 0.17 6 1 5 0.08 [V] 1 4 [µs] [A] 80 10

40 4: PGAV = 0.5 W 5: PGM = 5 W I GD,TVJ = 140°C 6: PGM = 10 W 0.1 1 0 1 10 100 1000 10000 10 100 1000 0 40 80 120 160 T [°C] IG [mA] IG [mA] case Fig. 6 Max. forward current at Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd case temperature

250 0.24

dc = 0.20 RthHA 200 1 0.1 0.5 P 0.2 tot 0.4 0.16 0.4 0.33 150 0.6 Z 0.17 thJC [W] 0.8 0.08 0.12 1.0 100 [K/W] 0.08 i Rthi (K/W) ti (s) 1 0.0073 0.0001 50 2 0.0128 0.0031 0.04 3 0.1329 0.084 4 0.067 0.42 0 0.00 0 40 80 120 160 0 40 80 120 160 1 10 100 1000 10000 t [ms] IT(AV) [A] Tamb [°C] Fig. 8 Transient thermal impedance junction to case Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature