15 CFR Ch. VII (1–1–20 Edition) § 774.2
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Aldrich Vapor
Aldrich Vapor Library Listing – 6,611 spectra This library is an ideal tool for investigator using FT-IR to analyze gas phase materials. It contains gas phase spectra collected by Aldrich using a GC-IR interface to ensure chromatographically pure samples. The Aldrich FT-IR Vapor Phase Library contains 6,611 gas phase FT-IR spectra collected by Aldrich Chemical Company using a GC interface. The library includes compound name, molecular formula, CAS (Chemical Abstract Service) registry number, Aldrich catalog number, and page number in the Aldrich Library of FT-IR Spectra, Edition 1, Volume 3, Vapor-Phase. Aldrich Vapor Index Compound Name Index Compound Name 6417 ((1- 3495 (1,2-Dibromoethyl)benzene; Styrene Ethoxycyclopropyl)oxy)trimethylsilane dibromide 2081 (+)-3-(Heptafluorobutyryl)camphor 3494 (1-Bromoethyl)benzene; 1-Phenylethyl 2080 (+)-3-(Trifluoroacetyl)camphor bromide 262 (+)-Camphene; 2,2-Dimethyl-3- 6410 (1-Hydroxyallyl)trimethylsilane methylenebicyclo[2.2.1]heptane 6605 (1-Methyl-2,4-cyclopentadien-1- 2828 (+)-Diisopropyl L-tartrate yl)manganese tricarbonyl 947 (+)-Isomenthol; [1S-(1a,2b,5b)]-2- 6250 (1-Propynyl)benzene; 1-Phenylpropyne Isopropyl-5-methylcyclohexano 2079 (1R)-(+)-3-Bromocamphor, endo- 1230 (+)-Limonene oxide, cis + trans; (+)-1,2- 2077 (1R)-(+)-Camphor; (1R)-(+)-1,7,7- Epoxy-4-isopropenyl-1- Trimethylbicyclo[2.2.1]heptan- 317 (+)-Longifolene; (1S)-8-Methylene- 976 (1R)-(+)-Fenchyl alcohol, endo- 3,3,7-trimethyltricyclo[5.4.0 2074 (1R)-(+)-Nopinone; (1R)-(+)-6,6- 949 (+)-Menthol; [1S-(1a,2b,5a)]-(+)-2- Dimethylbicyclo[3.1.1]heptan-2- -
Hfc STRUCTURAL FOAMS SYNTHESIZED from POLYMER PRECURSORS
HfC STRUCTURAL FOAMS SYNTHESIZED FROM POLYMER PRECURSORS Except where reference is made to the work of others, the work described in this dissertation is my own or was done in collaboration with my advisory committee. This dissertation does not include proprietary or classified information. ________________________________________ Haibo Fan Certificate of Approval: ______________________________ _____________________________ ZhongYang Cheng Bryan A. Chin, Chair Assistant Professor Professor Materials Engineering Materials Engineering ______________________________ ______________________________ Dong-Joo Kim William C. Neely Assistant Professor Professor Materials Engineering Chemistry and Biochemistry ___________________ Stephen L. McFarland Dean Graduate School HfC STRUCTURAL FOAMS SYNTHESIZED FROM POLYMER PRECURSORS Haibo Fan A Dissertation Submitted to the Graduate Faculty of Auburn University in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy Auburn, Alabama December 16, 2005 HfC STRUCTURAL FOAMS SYNTHESIZED FROM POLYMER PRECURSORS Haibo Fan Permission is granted to Auburn University to make copies of this dissertation at its discretion, upon request of individuals or institutions and at their expense. The author reserves all publication rights. ______________________________ Signature of Author ______________________________ Date iii VITA Haibo Fan, son of Chaoying Fan and Yulan Shi, was born on November 18, 1976, in Ugrat Front Banner, Inner-Mongolia, the People’s Republic of China. He graduated from Ugrat Front Banner No.1 High School in 1994. He studied at Tianjin University for four years and graduated with a Bachelor of Engineering degree in Mechanical Engineering in July 1998. He entered Auburn University in August 2000 to pursue his M.S. and Ph.D. degrees in Materials Engineering. He received his M.S. degree in May 2003. -
Aldrich Raman
Aldrich Raman Library Listing – 14,033 spectra This library represents the most comprehensive collection of FT-Raman spectral references available. It contains many common chemicals found in the Aldrich Handbook of Fine Chemicals. To create the Aldrich Raman Condensed Phase Library, 14,033 compounds found in the Aldrich Collection of FT-IR Spectra Edition II Library were excited with an Nd:YVO4 laser (1064 nm) using laser powers between 400 - 600 mW, measured at the sample. A Thermo FT-Raman spectrometer (with a Ge detector) was used to collect the Raman spectra. The spectra were saved in Raman Shift format. Aldrich Raman Index Compound Name Index Compound Name 4803 ((1R)-(ENDO,ANTI))-(+)-3- 4246 (+)-3-ISOPROPYL-7A- BROMOCAMPHOR-8- SULFONIC METHYLTETRAHYDRO- ACID, AMMONIUM SALT PYRROLO(2,1-B)OXAZOL-5(6H)- 2207 ((1R)-ENDO)-(+)-3- ONE, BROMOCAMPHOR, 98% 12568 (+)-4-CHOLESTEN-3-ONE, 98% 4804 ((1S)-(ENDO,ANTI))-(-)-3- 3774 (+)-5,6-O-CYCLOHEXYLIDENE-L- BROMOCAMPHOR-8- SULFONIC ASCORBIC ACID, 98% ACID, AMMONIUM SALT 11632 (+)-5-BROMO-2'-DEOXYURIDINE, 2208 ((1S)-ENDO)-(-)-3- 97% BROMOCAMPHOR, 98% 11634 (+)-5-FLUORODEOXYURIDINE, 769 ((1S)-ENDO)-(-)-BORNEOL, 99% 98+% 13454 ((2S,3S)-(+)- 11633 (+)-5-IODO-2'-DEOXYURIDINE, 98% BIS(DIPHENYLPHOSPHINO)- 4228 (+)-6-AMINOPENICILLANIC ACID, BUTANE)(N3-ALLYL)PD(II) CL04, 96% 97 8167 (+)-6-METHOXY-ALPHA-METHYL- 10297 ((3- 2- NAPHTHALENEACETIC ACID, DIMETHYLAMINO)PROPYL)TRIPH 98% ENYL- PHOSPHONIUM BROMIDE, 12586 (+)-ANDROSTA-1,4-DIENE-3,17- 99% DIONE, 98% 13458 ((R)-(+)-2,2'- 963 (+)-ARABINOGALACTAN BIS(DIPHENYLPHOSPHINO)-1,1'- -
Synthesis of Metal Selenide Semiconductor Nanocrystals Using Selenium Dioxide As Precursor
SYNTHESIS OF METAL SELENIDE SEMICONDUCTOR NANOCRYSTALS USING SELENIUM DIOXIDE AS PRECURSOR By XIAN CHEN A THESIS PRESENTED TO THE GRADUATE SCHOOL OF THE UNIVERSITY OF FLORIDA IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF MASTER OF SCIENCE UNIVERSITY OF FLORIDA 2007 1 © 2007 Xian Chen 2 To my parents 3 ACKNOWLEDGMENTS Above all, I would like to thank my parents for what they have done for me through these years. I would not have been able to get to where I am today without their love and support. I would like to thank my advisor, Dr. Charles Cao, for his advice on my research and life and for the valuable help during my difficult times. I also would like to thank Dr. Yongan Yang for his kindness and helpful discussion. I learned experiment techniques, knowledge, how to do research and so on from him. I also appreciate the help and friendship that the whole Cao group gave me. Finally, I would like to express my gratitude to Dr. Ben Smith for his guidance and help. 4 TABLE OF CONTENTS page ACKNOWLEDGMENTS ...............................................................................................................4 LIST OF FIGURES .........................................................................................................................7 ABSTRACT.....................................................................................................................................9 CHAPTER 1 SEMICONDUCTOR NANOCRYSTALS ............................................................................11 1.1 Introduction..................................................................................................................11 -
WO 2016/074683 Al 19 May 2016 (19.05.2016) W P O P C T
(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2016/074683 Al 19 May 2016 (19.05.2016) W P O P C T (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every C12N 15/10 (2006.01) kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, (21) International Application Number: BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, PCT/DK20 15/050343 DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, (22) International Filing Date: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, 11 November 2015 ( 11. 1 1.2015) KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, (25) Filing Language: English PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, (26) Publication Language: English SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (30) Priority Data: PA 2014 00655 11 November 2014 ( 11. 1 1.2014) DK (84) Designated States (unless otherwise indicated, for every 62/077,933 11 November 2014 ( 11. 11.2014) US kind of regional protection available): ARIPO (BW, GH, 62/202,3 18 7 August 2015 (07.08.2015) US GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (71) Applicant: LUNDORF PEDERSEN MATERIALS APS TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, [DK/DK]; Nordvej 16 B, Himmelev, DK-4000 Roskilde DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, (DK). -
(12) United States Patent (10) Patent No.: US 9,048,183 B2 Ganguli Et Al
USOO9048183B2 (12) United States Patent (10) Patent No.: US 9,048,183 B2 Ganguli et al. (45) Date of Patent: Jun. 2, 2015 (54) NMOSMETAL GATE MATERIALS, (52) U.S. Cl. MANUFACTURING METHODS, AND CPC .......... HOIL 21/28008 (2013.01); C23C I6/06 EQUIPMENT USING CVD AND ALD (2013.01); C23C 16/32 (2013.01); PROCESSES WITH METAL BASED (Continued) PRECURSORS (58) Field of Classification Search (71) Applicant: Applied Materials, Inc., Santa Clara, None CA (US) See application file for complete search history. (56) References Cited (72) Inventors: Seshadri Ganguli, Sunnyvale, CA (US); Srinivas Gandikota, Santa Clara, CA U.S. PATENT DOCUMENTS (US); Yu Lei, Belmont, CA (US); Xinliang Lu, Fremont, CA (US); Sang 5,055,280 A 10/1991 Nakatani et al. Ho Yu, Cupertino, CA (US); Hoon Kim, 6,139,922 A 10/2000 Kaloyeros et al. Santa Clara, CA (US); Paul F. Ma, Santa (Continued) Clara, CA (US); Mei Chang, Saratoga, CA (US); Maitreyee Mahajani, FOREIGN PATENT DOCUMENTS Saratoga, CA (US); Patricia M. Liu, Saratoga, CA (US) KR 2003OOO9093. A 1, 2003 s OTHER PUBLICATIONS (73) Assignee: APPLIED MATERIALS, INC., Santa International Search Report PCT/US2011/033820 dated Jan. 5, Clara, CA (US) 2012. (*) Notice: Subject to any disclaimer, the term of this (Continued) patent is extended or adjusted under 35 Primary Examiner — Yasser A Abdelaziez U.S.C. 154(b) by 0 days. (74) Attorney, Agent, or Firm — Patterson & Sheridan, LLP (21) Appl. No.: 14/147,291 (57) ABSTRACT Embodiments provide methods for depositing metal-contain (22) Filed: Jan. 3, 2014 ing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and (65) Prior Publication Data metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or US 2014/O12O712 A1 May 1, 2014 ALD. -
High-Temperature Mechanical Properties of Polycrystalline Hafnium Carbide and Hafnium Carbide Containing 13-Volume-Percent Hafnium Diboride Nasa Tn D-5008
d HIGH-TEMPERATURE MECHANICAL PROPERTIES OF POLYCRYSTALLINE HAFNIUM CARBIDE AND HAFNIUM CARBIDE CONTAINING 13-VOLUME-PERCENT HAFNIUM DIBORIDE NASA TN D-5008 HIGH-TEMPERATURE MECHANICAL PROPERTIES OF POLYCRYSTALLINE HAFNIUM CARBIDE AND HAFNIUM CARBIDE CONTAINING 13-VOLUME- PERCENT HAFNIUM DIBORIDE By William A. Sanders and Hubert B. Probst Lewis Research Center Cleveland, Ohio NATIONAL AERONAUTICS AND SPACE ADMINISTRATION ~ For sale by the Clearinghouse for Federal Scientific and Technical Information Springfield, Virginia 22151 - CFSTl price $3.00 ABSTRACT Hot-pressed, single-phase HfC and HfC containing 13-vol % HfB2 were tested in three-point transverse rupture to temperatures as high as 4755' F (2625' C). Hot hard- ness tests were also run to 3200' F (1760' C). Separate effects on the transverse rup- ture behavior of HfC due to the HfB2 second phase and due to a grain- size difference are discussed on the basis of strength, deformation, and metallographic results. The probable mechanisms responsible for deformation are also discussed. In hot-hardness tests of HfC containing 13 vol % HfB2 second phase, a change in the temperature de- pendency of hot hardness at 2600' F (1425' C) is discussed and related to the degree of cracking around indentations. ii H I G H -TEM PERATURE MEC HANICAL PRO PE RTlES OF POLY C RY STALLINE HAFNIUM CARBIDE AND HAFNIUM CARBIDE CONTAINING 13 -VOLUME -PERCENT HAFN IUM D1 BOR I DE by William A. Sanders and Hubert 9. Probst Lewis Research Center SUMMARY Transverse rupture tests were conducted on single -phase hafnium carbide and hafnium carbide containing 13- volume- percent hafnium diboride as a distinct second phase. -
WO 2016/147132 Al 22 September 2016 (22.09.2016) P O P C T
(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2016/147132 Al 22 September 2016 (22.09.2016) P O P C T (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every C07C 227/32 (2006.01) C07D 405/04 (2006.01) kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, (21) International Application Number: BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, PCT/IB20 16/05 14 1 DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, (22) International Filing Date: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, 17 March 2016 (17.03.2016) KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, (25) Filing Language: English PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, (26) Publication Language: English SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (30) Priority Data: 895/MUM/2015 18 March 2015 (18.03.2015) (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (71) Applicant: PIRAMAL ENTERPRISES LIMITED GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, [IN/IN]; Piramal Tower, Ganpatrao Kadam Marg, Lower TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, Parel, Mumbai 400 013 (IN). -
Oxidation Mechanisms of Hafnium Carbide and Hafnium Diboride in the Temperature Range 1400 to 2100°C
C. BRENT BARGERON, RICHARD C. BENSON, ROBB W. NEWMAN, A. NORMAN JETTE, and TERRY E. PHILLIPS OXIDATION MECHANISMS OF HAFNIUM CARBIDE AND HAFNIUM DIBORIDE IN THE TEMPERATURE RANGE 1400 TO 2100°C Two ultra-high-temperature materials, hafnium carbide and hafnium diboride, were oxidized in the temperature range 1400 to 2100°C. The two materials oxidized in distinctly different ways. The carbide formed a three-layer system consisting of a layer of residual carbide, a layer of reduced (partially oxidized) hafnium oxide containing carbon, and a layer of fully oxidized hafnium dioxide. The diboride oxidized into only two layers. For the diboride system, the outer layer, mainly hafnium dioxide, contained several intriguing physical structures. INTRODUCTION Materials that can provide protection at temperatures aspects of research that has been performed over the past above l700°C in an oxidative environment are needed for four or five years.2-5 important applications. To be usefully employed as a turbine blade coating, for example, a substance would EXPERIMENTAL METHODS need to withstand many excursions from normal ambient The experimental arrangement for the oxidation pro conditions into the high-temperature regime and back cess has been described in detail previously.2-4 An induc again without cracking, spalling, or ablating. Other ap tion furnace consisting of two concentric zirconia tubes plications, such as a combustion chamber liner, might with a graphite susceptor between them was used to heat require only one high-temperature exposure. Not only do the specimen. (A susceptor is the heating element in an the chemical properties need to be considered, but the induction furnace.) The specimen temperature was mea physical, microscopic structure of a candidate material sured with an optical pyrometer through a sapphire win can also determine how well it will function under ex dow. -
The Use of Natural Product Substrates for the Synthesis of Libraries of Biologically Active, New Chemical Entities
University of Montana ScholarWorks at University of Montana Graduate Student Theses, Dissertations, & Graduate School Professional Papers 2010 The seU of Natural Product Substrates for the Synthesis of Libraries of Biologically Active, New Chemical Entities Joshua Bryant Phillips The University of Montana Let us know how access to this document benefits ouy . Follow this and additional works at: https://scholarworks.umt.edu/etd Recommended Citation Phillips, Joshua Bryant, "The sU e of Natural Product Substrates for the Synthesis of Libraries of Biologically Active, New Chemical Entities" (2010). Graduate Student Theses, Dissertations, & Professional Papers. 1100. https://scholarworks.umt.edu/etd/1100 This Dissertation is brought to you for free and open access by the Graduate School at ScholarWorks at University of Montana. It has been accepted for inclusion in Graduate Student Theses, Dissertations, & Professional Papers by an authorized administrator of ScholarWorks at University of Montana. For more information, please contact [email protected]. THE USE OF NATURAL PRODUCT SUBSTRATES FOR THE SYNTHESIS OF LIBRARIES OF BIOLOGICALLY ACTIVE, NEW CHEMICAL ENTITIES by Joshua Bryant Phillips B.S. Chemistry, Northern Arizona University, 2002 B.S. Microbiology (health pre-professional), Northern Arizona University, 2002 Presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy Chemistry The University of Montana June 2010 Phillips, Joshua Bryant Ph.D., June 2010 Chemistry THE USE OF NATURAL PRODUCT SUBSTRATES FOR THE SYNTHESIS OF LIBRARIES OF BIOLOGICALLY ACTIVE, NEW CHEMICAL ENTITIES Advisor: Dr. Nigel D. Priestley Chairperson: Dr. Bruce Bowler ABSTRACT Since Alexander Fleming first noted the killing of a bacterial culture by a mold, antibiotics have revolutionized medicine, being able to treat, and often cure life-threatening illnesses and making surgical procedures possible by eliminating the possibility of opportunistic infection. -
ITAR Category
Category XIV—Toxicological Agents, Including Chemical Agents, Biological Agents, and Associated Equipment *(a) Chemical agents, to include: (1) Nerve agents: (i) O-Alkyl (equal to or less than C10, including cycloalkyl) alkyl (Methyl, Ethyl, n-Propyl or Isopropyl)phosphonofluoridates, such as: Sarin (GB): O-Isopropyl methylphosphonofluoridate (CAS 107–44–8) (CWC Schedule 1A); and Soman (GD): O-Pinacolyl methylphosphonofluoridate (CAS 96–64–0) (CWC Schedule 1A); (ii) O-Alkyl (equal to or less than C10, including cycloalkyl) N,N-dialkyl (Methyl, Ethyl, n- Propyl or Isopropyl)phosphoramidocyanidates, such as: Tabun (GA): O-Ethyl N, N- dimethylphosphoramidocyanidate (CAS 77–81–6) (CWC Schedule 1A); (iii) O-Alkyl (H or equal to or less than C10, including cycloalkyl) S–2-dialkyl (Methyl, Ethyl, n- Propyl or Isopropyl)aminoethyl alkyl (Methyl, Ethyl, n-Propyl or Isopropyl)phosphonothiolates and corresponding alkylated and protonated salts, such as: VX: O-Ethyl S-2- diisopropylaminoethyl methyl phosphonothiolate (CAS 50782–69–9) (CWC Schedule 1A); (2) Amiton: O,O-Diethyl S-[2(diethylamino)ethyl] phosphorothiolate and corresponding alkylated or protonated salts (CAS 78–53–5) (CWC Schedule 2A); (3) Vesicant agents: (i) Sulfur mustards, such as: 2-Chloroethylchloromethylsulfide (CAS 2625–76–5) (CWC Schedule 1A); Bis(2-chloroethyl)sulfide (CAS 505–60–2) (CWC Schedule 1A); Bis(2- chloroethylthio)methane (CAS 63839–13–6) (CWC Schedule 1A); 1,2-bis (2- chloroethylthio)ethane (CAS 3563–36–8) (CWC Schedule 1A); 1,3-bis (2-chloroethylthio)-n- propane (CAS -
Carbides and Nitrides of Zirconium and Hafnium
materials Review Carbides and Nitrides of Zirconium and Hafnium Sergey V. Ushakov 1,* , Alexandra Navrotsky 1,* , Qi-Jun Hong 2,* and Axel van de Walle 2,* 1 Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California at Davis, Davis, CA 95616, USA 2 School of Engineering, Brown University, Providence, RI 02912, USA * Correspondence: [email protected] (S.V.U.); [email protected] (A.N.); [email protected] (Q.-J.H.); [email protected] (A.v.d.W.) Received: 6 August 2019; Accepted: 22 August 2019; Published: 26 August 2019 Abstract: Among transition metal carbides and nitrides, zirconium, and hafnium compounds are the most stable and have the highest melting temperatures. Here we review published data on phases and phase equilibria in Hf-Zr-C-N-O system, from experiment and ab initio computations with focus on rocksalt Zr and Hf carbides and nitrides, their solid solutions and oxygen solubility limits. The systematic experimental studies on phase equilibria and thermodynamics were performed mainly 40–60 years ago, mostly for binary systems of Zr and Hf with C and N. Since then, synthesis of several oxynitrides was reported in the fluorite-derivative type of structures, of orthorhombic and cubic higher nitrides Zr3N4 and Hf3N4. An ever-increasing stream of data is provided by ab initio computations, and one of the testable predictions is that the rocksalt HfC0.75N0.22 phase would have the highest known melting temperature. Experimental data on melting temperatures of hafnium carbonitrides are absent, but minimum in heat capacity and maximum in hardness were reported for Hf(C,N) solid solutions.