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JPM09 Advance-Final V5.Indd Technical Photomask Japan Program Symposium on Photomask and NGL Mask Technology XVI Conferences: 8–10 April 2009 Annex Hall, Pacifi co Yokohama Yokohama, Japan NETWORK WITH PEERS — HEAR THE LATEST RESEARCH Materials of and for Photomasks Fabrication Process Steps and Equipments for Photomasks (process and equipments for developing, etching, cleaning, etc.) Photomask Writing Tools and Technologies Metrology Tools and Technologies Inspection Tools and Technologies Repairing Tools and Technologies Mask Data Preparations EDA and DFM for Photomask Photomasks with RET: PSM, Masks with OPC Photomask-relating Lithography Technologies NGL Masks: EUV, Nano-imprint ML2 etc. Mask Strategies and Business Challenges: Cost, Cycle-Time etc. Sponsored by: spie.org/jpm · [email protected] · TEL: +1 360 676 3290 · +1 888 504 8171 1 JJPM09PM09 AAdvance-Finaldvance-Final vv5.indd5.indd 1 33/12/09/12/09 110:02:010:02:01 AAMM Condensed Schedule Wednesday 8 April 09.00 - 09.10 Opening Remarks 09.10 - 10.40 Session 1: Invited Session 10.40 - 11.00 Break 11.00 - 12.20 Session 2: Material & Process I 12.20 - 13.20 Lunch Break 13.20 - 15.40 Session 3: Material & Process II 15.40 - 16.00 Refreshment Break 16.00 - 18.30 Poster Session/Display 4a: Material & Process 4b: Writing Technology 4c: Metrology 4d: Inspection Tools & Technologies Photomask Japan 4e: Repairing Tools & Technologies 4f: EUVL Mask 4g: NIL & Patterning Media 4h: Mask-related Lithography 4i: EDA, DFM, & MDP 4j: Strategy & Business 18.30 - 20.30 Banquet Thursday 9 April Concurrent Sessions Room A Room B 09.00 - 10.30 Session 5A: EUVL Mask I 09.00 - 10.30 Session 5B: NIL & Patterned Media 10.30 - 10.50 Refreshment Break 10.30 - 10.50 Refreshment Break 10.50 - 12.20 Session 6A: EUVL Mask II 10.50 - 12.30 Session 6B: Strategy & Business 12.20 - 13.20 Lunch Break 12.30 - 13.20 Lunch Break 13.20 - 15.30 Session 7: EDA, DFM, & MDP 15.30 - 15.50 Refreshment Break 15.50 - 17.40 Session 8: Metrology 17.40 - 18.00 Refreshment Break 18.00 - 20.00 Panel Discussion Contents Friday 10 April Conf. 7379 - Photomask and Next Generation 09.00 - 10.20 Session 9: Writing Technology Lithography Mask Technology XVI . 3 10.20 - 10.40 Refreshment Break General Information . 8 10.40 - 12.20 Session 10: Inspection & Repair I 12.20 - 13.20 Lunch Break Hotel Accommodations Information . 9 13.20 - 14.40 Session 11: Inspection & Repair II Hotel Application . 11 14.40 - 15.00 Refreshment Break Registration Information . 12 15.00 - 17.10 Session 12: Mask-related Lithography Access Maps . .14-15 17.10 - 17.20 Closing Remarks For information www.spie.org/jpm This program is based on commitments received up to the time of publication and is subject to change without notice. 2 spie.org/jpm · [email protected] · TEL: +1 360 676 3290 · +1 888 504 8171 JJPM09PM09 AAdvance-Finaldvance-Final vv5.indd5.indd 2 33/12/09/12/09 110:02:020:02:02 AAMM Conference 7379 Wednesday-Friday 8-10 April 2009 • Proceedings of SPIE Vol. 7379 Photomask and Next Generation Lithography Mask Technology XVI Symposium Chair: Toshiyuki Horiuchi, Tokyo Denki Univ. (Japan) Advisory Committee Chair: Yasuo Tarui, Tokyo Univ. of Agriculture and Technology (Japan) Advisory Committee: Masanori Komuro, New Energy and Industrial Technology Development Organization (Japan); Masatoshi Migitaka, Toyota Tec hnological Institute (Japan); Masao Otaki, Toppan Printing Co., Ltd. (Japan); Norio Saitou, Nippon Institute of Technology (Japan); Yoshio Tanaka, Luminescent Technologies, Inc. (Japan) Organizing Committee Chair: Toshiyuki Horiuchi, Tokyo Denki Univ. (Japan) Organizing Committee Vice-Chair: Masato Shibuya, Tokyo Polytechnic Univ. (Japan) Organizing Committee: Uwe F. W. Behringer, UBC Microelectronics (Germany); Parkson W. Chen, Taiwan Mask Corp. (Taiwan); Hideaki Hamada, NuFlare Technology Inc. (Japan); Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan); Kunihiro Hosono, Renesas Technology Corp. (Japan); Masashi Iwatsuki, JEOL Ltd. (Japan); Hiroichi Kawahira, Sony Corp. (Japan); Masaomi Kameyama, Nikon Corp. (Japan); Ichiro Mori, Semiconductor Leading Edge Technologies, Inc. (Japan); Hiroaki Morimoto, Toppan Printing Co., Ltd. (Japan); Osamu Nagarekawa, HOYA Corp. (Japan); Kenichiro Okuda, SEMI Japan (Japan); Patricia Marmillion, SEMATECH, Inc. (USA); Hiroyuki Shigemura, Semiconductor Leading Edge Technologies, Inc. (Japan); Yoshiki Suzuki, KLA-Tencor Japan Ltd. (Japan); Tadahiro Takigawa, Brion Technologies KK (Japan); Koichiro Tsujita, Canon Inc. (Japan); J. Tracy Weed, Synopsys, Inc. (USA); Masaki Yamabe, Association of Super-Advanced Electronics Technologies (Japan); Anto Yasaka, SII NanoTechnology Inc. (Japan); Nobuyuki Yoshioka, Renesas Technology Corp. (Japan) Steering Committee Chair: Hiroyuki Shigemura, Semiconductor Leading Edge Technologies, Inc. (Japan) Steering Committee Vice-Chairs: Morihisa Hoga, Dai Nippon Printing Co., Ltd. (Japan); Tsuneo Terasawa, Semiconductor Leading Edge Technologies, Inc. (Japan) Steering Committee: Takayuki Abe, NuFlare Technology Inc. (Japan); Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan); Kunihiro Hosono, Renesas Technology Corp. (Japan); Naoyuki Ishiwata, Fujitsu Ltd. (Japan); Ichiro Kagami, Sony Corp. (Japan); Kokoro Kato, SII NanoTechnology Inc. (Japan); Toshio Konishi, Toppan Printing Co., Ltd. (Japan); Koichi Moriizumi, Lasertec Corp. (Japan); Takeshi Nakajima, KLA-Tencor Japan Ltd. (Japan); Masatoshi Oda, NTT-AT Nanofabrication Corp. (Japan); Yasushi Ohkubo, HOYA Corp. (Japan); Toshiyuki Takahashi, JEOL Ltd. (Japan); Hiroyoshi Tanabe, Intel Corp. (Japan); Yoji Tonooka, Toppan Printing Co., Ltd. (Japan); Hidehiro Watanabe, Toshiba Corp. (Japan); Kazuo Yokoyama, Cadence Design Systems, Inc. (Japan) Program Committee Chair: Kunihiro Hosono, Renesas Technology Corp. (Japan) Program Committee Vice-Chairs: Kokoro Kato, SII NanoTechnology Inc. (Japan); Toshio Konishi, Toppan Printing Co., Ltd. (Japan) Program Committee: Akihiko Ando, NEC Electronics Corp. (Japan); Han-ku Cho, Sumsung Electronics Co., Ltd. (Korea); Curt Jackson, Toppan Photomasks, Inc. (USA); Jeff N. Farnsworth, Intel Corp. (USA); Thomas B. Faure, IBM Corp. (USA); Takamitsu Furukawa, Oki Electric Industry Co., Ltd. (Japan); Brian J. Grenon, Grenon Consulting, Inc. (USA); Shigeru Hirukawa, Nikon Corp. (Japan); John Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan); Mark Ma, Photronics (USA); Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan); Koji Murano, Toshiba Corp. (Japan); Yoshikazu Nagamura, Renesas Technology Corp. (Japan); Yoshinori Nagaoka, KLA-Tencor Japan Ltd. (Japan); Yasutoshi Nakagawa, JEOL Ltd. (Japan); Nobuyuki Nishiguchi, Semiconductor Technology Academic Research Ctr. (Japan); Tomoyuki Okada, Fujitsu Ltd. (Japan); Hisatake Sano, Dai Nippon Printing Co., Ltd. (Japan); Frank Schellenberg, Mentor Graphics Corp. (USA); Yoshiyuki Sekine, Canon Inc. (Japan); Yasunari Sohda, Hitachi, Ltd. (Japan); Kong Son, KLA-Tencor Corp. (USA); Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan); Minoru Sugawara, Sony Corp. (Japan); Yoji Takagi, Applied Materials Japan, Inc. (Japan); Yoichi Usui, HOYA Corp.(Japan); Hisashi Watanabe, Matsushita Electric Industrial Co., Ltd. (Japan) spie.org/jpm · [email protected] · TEL: +1 360 676 3290 · +1 888 504 8171 3 JJPM09PM09 AAdvance-Finaldvance-Final vv5.indd5.indd 3 33/12/09/12/09 110:02:020:02:02 AAMM Conference 7379 Wednesday 8 April Poster Session Material & Process Opening Remarks Room: . Wed. 16.00 to 18.30 Room: . Wed. 09.00 to 09.10 The art of photomask materials for low-k1-193nm-lithography, M. Hashimoto, A. SESSION 1: Invited Session Kominato, H. Mitsui, HOYA Corp. (Japan) . [7379-114] Evaluation of the fl atness effects of mask backing and orientation during Session Chairs: photomask pellicle mount, T. Mizoguchi, S. Akutagawa, Toppan Photomask, Inc. Room: . Wed. 09.10 to 10.40 (United States); M. Barrett, M. Caterer, B. Nolan, K. Racette, D. Plouffe, N. Zhou, IBM Corp. (United States) . [7379-61] 09.10: TBD TSMC (Keynote Presentation), . [7379-01] Evaluation for EAPSM life time by ArF pellicle characteristic durability, K. J. Seo, 09.40: Photomask 2008 Best Paper: Wafer plane inspection evaluated for J. S. Ryu, G. M. Jeong, S. C. Kang, S. C. Kim, C. Y. Kim, Hynix Semiconductor Inc. photomask production (Invited Paper), Emily E. Gallagher, Karen D. Badger, (Korea, Republic of) . [7379-62] Mark Lawliss, IBM Corp.; Yutaka Kodera, Toppan Electronics Inc. (Japan); Jaione Itrapu-Azpiroz, IBM Microelectronics Div.; Song Pang, Hongqin Zhang, Eugenia D. In situ selectivity monitor for dry etch of photomasks, T. Zhou, M. Grimbergen, Eugenieva, Christopher H. Clifford,Arosha W. Goonesekera, Yibin Tian, KLA-Tencor M. Chandrachood, J. Chen, I. Ibrahim, A. Kumar, Applied Materials, Inc. (United Inc. [7379-02] States) . [7379-63] 10.10: TBD (Invited:EMLC) (Invited Paper), . [7379-03] Plasma optical emission analysis for chamber condition monitor, Z. Mao, T. Zhou, M. Grimbergen, D. Bivens, J. Chen, I. Ibrahim, A. Kumar, Applied Materials, Refreshment Break . 10.40 to 11.00 Inc. (United States) . [7379-64] Fine pattern fabrication property of binary mask and attenuated phase shift SESSION 2: Material & Process I mask, T. Yamazaki, Y. Kojima, M. Yamana, T. Haraguchi, T. Tanaka, Toppan Printing Co., Ltd. (Japan) . .[7379-65] Session Chairs: Applied analytics on EAPSM Cr plasma etch optimization utilizing design Room: . Wed. 11.00 to 12.20 of experiment, M. J. Tian, E. Wang, Z. H. Zhu, Semiconductor Manufacturing International Corp. (China) . [7379-67] 11.00: Plasma
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