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V64N5 Title Copyright.Indd Semiconductor Wafer Bonding 13: Science, Technology, and Applications Editors: H. Moriceau R. Knechtel CEA-LETI X-FAB MEMS Foundry GmbH Grenoble, France Erfurt, Germany H. Baumgart T. Suga Old Dominion University University of Tokyo Norfolk, Virginia, USA Tokyo, Japan M. S. Goorsky C. S. Tan University of California, Los Angeles Nanyang Technological University Los Angeles, California, USA Singapore K. D. Hobart Naval Research Laboratory Washington, DC, USA Sponsoring Division: Electronics and Photonics Published by TM The Electrochemical Society 65 South Main Street, Building D Pennington, NJ 08534-2839, USA Vol. 64, No. 5 tel 609 737 1902 fax 609 737 2743 www.electrochem.org Copyright 2014 by The Electrochemical Society. All rights reserved. This book has been registered with Copyright Clearance Center. For further information, please contact the Copyright Clearance Center, Salem, Massachusetts. Published by: The Electrochemical Society 65 South Main Street Pennington, New Jersey 08534-2839, USA Telephone 609.737.1902 Fax 609.737.2743 e-mail: ecs@electrochem.org Web: www.electrochem.org ISSN 1938-6737 (online) ISSN 1938-5862 (print) ISSN 2151-2051 (cd-rom) ISBN 978-1-62332-185-7 (Soft Cover) ISBN 978-1-60768-542-5 (PDF) Printed in the United States of America. ECS Transactions, Volume 64, Issue 5 Semiconductor Wafer Bonding 13: Science, Technology, and Applications Table of Contents Preface iii Chapter 1 Fundamentals of Wafer Bonding (Invited) Glass-Glass Direct Bonding 3 G. Kalkowski, S. Risse, U. Zeitner, F. Fuchs, R. Eberhardt, A. Tünnermann Fracture Dynamics during the Silicon Layer Transfer of the Smart Cut™ Process 13 D. Massy, F. Mazen, J. Ragani, F. Madeira, D. Landru, F. Rieutord Contact Behavior among Vertical Aligned Carbon Nanotube Bumps under 21 Compression for Flexible Multilayer Substrates M. Fujino, H. Terasaka, T. Suga Nanomechanical Properties of Standard and Strained SOI Films Fabricated by Wafer 27 Bonding and Layer Splitting M. A. Mamun, K. Zhang, H. Baumgart, A. A. Elmustafa Chapter 2 Layer Transfer Techniques (Invited) SOI-Type Bonded Structures for Advanced Technology Nodes 35 J. Widiez, J. M. Hartmann, F. Mazen, S. Sollier, C. Veytizou, Y. Bogumilowicz, E. Augendre, M. Martin, F. Gonzatti, M. C. Roure, J. Duvernay, V. Loup, C. Euvrard-Colnat, A. Seignard, T. Baron, R. Cipro, F. Bassani, A. M. Papon, C. Guedj, I. Huyet, M. Rivoire, P. Besson, C. Figuet, W. Schwarzenbach, D. Delprat, T. Signamarcheix Epitaxial Growth and Layer Transfer of InP through Electrochemically Etched and 49 Annealed Porous Buried Layers D. Chen, X. Kou, S. Sareminaeini, M. S. Goorsky v Direct Bonding Mechanism of ALD-Al2O3 Thin Films 57 E. Beche, F. Fournel, V. Larrey, F. Rieutord, C. Morales, A. M. Charvet, F. Madeira, G. Audoit, J. M. Fabbri Chapter 3 Low Temperature Wafer Bonding Room-Temperature Wafer Direct Bonding Using Ne-Beam Surface-Activation 69 H. Takagi, Y. Kurashima, A. Maeda Surface Inspection of Cu-Cu Non-Thermal Compression Bonding for Wafer-to-Wafer 77 3D Stacking D. Kwon, Y. U. Song, P. Kang, T. Oh, C. R. Moon, D. Lee Combined Surface-Activated Bonding (SAB) Technologies for New Approach to Low 83 Temperature Wafer Bonding R. He, M. Fujino, A. Yamauchi, T. Suga Monolithic Thin Wafer Stacking Using Low Temperture Direct Bonding 95 J. Burggraf, J. Bravin, H. Wiesbauer, V. Dragoi Novel Surface Preparation Methods for Covalent and Conductive Bonded Interfaces 103 Fabrication C. Flötgen, N. Razek, V. Dragoi, M. Wimplinger Enhancement of Bonding Strength for Low Temperature Si3N4/Si3N4 Direct Wafer 111 Bonding by Nitrogen-Plasma Activation and Hydrofluoric Pre-dip F. S. Lo, C. C. Chiang, C. Li, T. H. Lee Chapter 4 Characterization of Bonded Wafers and Devices Part I (Invited) Water Stress Corrosion in Bonded Structures 121 F. Fournel, C. Martin-Cocher, D. Radisson, V. Larrey, E. Beche, C. Morales, P. A. Delean, F. Rieutord, H. Moriceau Surface Characterization for and by Semiconductor Wafer Direct Bonding 133 R. Knechtel, N. Frohn, H. Klingner vi AlN-AlN Wafer Bonding and Its Thermal Characteristics 141 S. Bao, K. H. Lee, G. Y. Chong, E. A. Fitzgerald, C. S. Tan Hermeticity and Reliability of Al-Al Thermocompression Wafer Bonding 149 N. Malik, E. Poppe, K. Schjolberg-Henriksen, M. M. V. Taklo, T. G. Finstad Large Area Plan-View Transmission Electron Microscopy Sample Preparation for 161 Direct-Bonded Interfaces B. Beekley, C. R. Roberts, M. S. Salazar, M. S. Goorsky Hermeticity and Reliability of Au-Au Thermocompression Bonds, Realized at Low 167 Temperature N. Malik, H. Tofteberg, E. Poppe, T. G. Finstad, K. Schjolberg-Henriksen Chapter 5 Temporary Wafer Bonding Temporary Wafer Bonding by Polyelectrolyte Interlayers 179 M. Eichler, H. Dillmann, L. C. Reim, M. Thomas, C. P. Klages Delamination Root Cause in Temporary Bonding 187 K. Vial, F. Fournel, M. Wimplinger, J. Burggraf, J. Bravin, P. Montméat, M. Pellat Chapter 6 III-V Wafer Bonding Applications (Invited) Wafer Bonding: An Integration Route for Hybrid III-V/SiGe CMOS on 199 300mm L. Czornomaz, N. Daix, E. Uccelli, V. Djara, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J. M. Hartmann, J. Fompeyrine (Invited) Heterogeneously Integrated III-V on Silicon Lasers 211 B. Ben Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, S. Menezo Effects of Miscut Substrates on Electrical Conductivity Across InP and GaAs 225 Wafer-Bonded Structures J. McKay, M. Seal, K. Yeung, M. Jackson, M. S. Goorsky vii Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for 235 Hybrid Tandem Cells N. Shigekawa, J. Liang, M. Morimoto, S. Nishida Chapter 7 Wafer Bonding for MEMS and Packaging (Invited) Wafer-Bonding for MEMS – Status and Trends 245 R. Hausner (Invited) Wafer-Level Integration of Embedded Cooling Approaches 253 S. Paredes, Y. Madhour, G. Schlottig, C. L. Ong, T. Brunschwiler Low-Temperature Solid-State Bonding Using Hydrogen Radical Treated Solder for 267 Optoelectronic and MEMS Packaging E. Higurashi, H. Kawai, T. Suga, S. Okada, T. Hagihara Electrical, Mechanical, and Hermeticity Properties of Low-Temperature, Plasma 275 Activated Direct Silicon Bonded Joints K. Schjølberg-Henriksen, N. Malik, E. V. Gundersen, O. R. Christiansen, K. Imenes, S. T. Moe Detailed Investgations of Inner Cavity Pressure of MEMS Devices Sealed by Wafer 285 Bonding R. Knechtel, S. Dempwolf, S. Hering Low Activation Temperature Au/Ti Getter Films for Wafer-Level Vacuum Packaging 297 M. Wu, J. Moulin, G. Agnus, A. Bosseboeuf Leak Rates and Residual Gas Pressure in Cavities Sealed by Metal 305 Thermo-Compression Bonding and Silicon Direct Bonding K. Schjølberg-Henriksen, N. Malik, A. Sandvand, G. Kittilsland, S. T. Moe viii Chapter 8 Metal Bonding and 3D-Integration (Invited) Room Temperature Bonding Using Thin Metal Films (Bonding Energy and 317 Technical Potential) T. Shimatsu, M. Uomoto, H. Kon (Invited) Reactive Bonding with Integrated Reactive and Nano Scale Energetic 329 Material Systems (iRMS): State-of-the-Art and Future Development Trends J. Braeuer, J. Besser, S. Hertel, R. Masser, W. Schneider, M. Wiemer, T. Gessner Modeling and Integration Phenomena of metal-metal direct bonding technology 339 L. Di Cioccio, F. Baudin, P. Gergaud, V. Delaye, P. H. Jouneau, F. Rieutord, T. Signamarcheix Voiding Phenomena in Copper-Copper Bonded Structures: Role of Creep 357 P. Gondcharton, B. Imbert, L. Benaissa, M. Verdier Impact Factors on Low Temperature Cu-Cu Wafer Bonding 369 B. Rebhan, M. Wimplinger, K. Hingerl Chapter 9 Other Wafer Bonding Applications (Invited) Direct Bonding: A Key Enabler for 3D Monolithic Integration 381 L. Brunet, P. Batude, F. Fournel, L. Benaissa, C. Fenouillet-Beranger, L. Pasini, F. Deprat, B. Previtali, F. Ponthenier, A. Seignard, C. Euvrard-Colnat, M. Rivoire, P. Besson, C. Arvet, E. Beche, O. Rozeau, O. Billoint, O. Turkyilmaz, F. Clermidy, T. Signamarcheix, M. Vinet Three-Dimensional Integration of Fully Depleted Silicon-on-Insulator Transistor 391 Substrates for CMOS Image Sensors Using Au/SiO2 Hybrid Bonding and XeF2 Etching K. Hagiwara, M. Goto, Y. Iguchi, H. Ohtake, T. Saraya, H. Toshiyoshi, E. Higurashi, T. Hiramoto ix Development of Materials Integration for Laser Gain Media: Single Crystals and 397 Ceramic (Polycrystalline) Materials and Applications J. McKay, T. Bai, M. S. Goorsky Author Index 403 x .
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