Semiconductor Wafer Bonding 13: Science, Technology, and Applications

Editors: H. Moriceau R. Knechtel CEA-LETI X-FAB MEMS Foundry GmbH Grenoble, France Erfurt, Germany H. Baumgart T. Suga Old Dominion University University of Tokyo Norfolk, Virginia, USA Tokyo, Japan M. S. Goorsky C. S. Tan University of California, Los Angeles Nanyang Technological University Los Angeles, California, USA Singapore K. D. Hobart Naval Research Laboratory Washington, DC, USA

Sponsoring Division:

Electronics and Photonics

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ECS Transactions, Volume 64, Issue 5 Semiconductor Wafer Bonding 13: Science, Technology, and Applications

Table of Contents

Preface iii

Chapter 1 Fundamentals of Wafer Bonding

(Invited) Glass-Glass Direct Bonding 3 G. Kalkowski, S. Risse, U. Zeitner, F. Fuchs, R. Eberhardt, A. Tünnermann

Fracture Dynamics during the Silicon Layer Transfer of the Smart Cut™ Process 13 D. Massy, F. Mazen, J. Ragani, F. Madeira, D. Landru, F. Rieutord

Contact Behavior among Vertical Aligned Carbon Nanotube Bumps under 21 Compression for Flexible Multilayer Substrates M. Fujino, H. Terasaka, T. Suga

Nanomechanical Properties of Standard and Strained SOI Films Fabricated by Wafer 27 Bonding and Layer Splitting M. A. Mamun, K. Zhang, H. Baumgart, A. A. Elmustafa

Chapter 2 Layer Transfer Techniques

(Invited) SOI-Type Bonded Structures for Advanced Technology Nodes 35 J. Widiez, J. M. Hartmann, F. Mazen, S. Sollier, C. Veytizou, Y. Bogumilowicz, E. Augendre, M. Martin, F. Gonzatti, M. C. Roure, J. Duvernay, V. Loup, C. Euvrard-Colnat, A. Seignard, T. Baron, R. Cipro, F. Bassani, A. M. Papon, C. Guedj, I. Huyet, M. Rivoire, P. Besson, C. Figuet, W. Schwarzenbach, D. Delprat, T. Signamarcheix

Epitaxial Growth and Layer Transfer of InP through Electrochemically Etched and 49 Annealed Porous Buried Layers D. Chen, X. Kou, S. Sareminaeini, M. S. Goorsky

v

Direct Bonding Mechanism of ALD-Al2O3 Thin Films 57 E. Beche, F. Fournel, V. Larrey, F. Rieutord, C. Morales, A. M. Charvet, F. Madeira, G. Audoit, J. M. Fabbri

Chapter 3 Low Temperature Wafer Bonding

Room-Temperature Wafer Direct Bonding Using Ne-Beam Surface-Activation 69 H. Takagi, Y. Kurashima, A. Maeda

Surface Inspection of Cu-Cu Non-Thermal Compression Bonding for Wafer-to-Wafer 77 3D Stacking D. Kwon, Y. U. Song, P. Kang, T. Oh, C. R. Moon, D. Lee

Combined Surface-Activated Bonding (SAB) Technologies for New Approach to Low 83 Temperature Wafer Bonding R. He, M. Fujino, A. Yamauchi, T. Suga

Monolithic Thin Wafer Stacking Using Low Temperture Direct Bonding 95 J. Burggraf, J. Bravin, H. Wiesbauer, V. Dragoi

Novel Surface Preparation Methods for Covalent and Conductive Bonded Interfaces 103 Fabrication C. Flötgen, N. Razek, V. Dragoi, M. Wimplinger

Enhancement of Bonding Strength for Low Temperature Si3N4/Si3N4 Direct Wafer 111 Bonding by Nitrogen-Plasma Activation and Hydrofluoric Pre-dip F. S. Lo, C. C. Chiang, C. Li, T. H. Lee

Chapter 4 Characterization of Bonded Wafers and Devices Part I

(Invited) Water Stress Corrosion in Bonded Structures 121 F. Fournel, C. Martin-Cocher, D. Radisson, V. Larrey, E. Beche, C. Morales, P. A. Delean, F. Rieutord, H. Moriceau

Surface Characterization for and by Semiconductor Wafer Direct Bonding 133 R. Knechtel, N. Frohn, H. Klingner

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AlN-AlN Wafer Bonding and Its Thermal Characteristics 141 S. Bao, K. H. Lee, G. Y. Chong, E. A. Fitzgerald, C. S. Tan

Hermeticity and Reliability of Al-Al Thermocompression Wafer Bonding 149 N. Malik, E. Poppe, K. Schjolberg-Henriksen, M. M. V. Taklo, T. G. Finstad

Large Area Plan-View Transmission Electron Microscopy Sample Preparation for 161 Direct-Bonded Interfaces B. Beekley, C. R. Roberts, M. S. Salazar, M. S. Goorsky

Hermeticity and Reliability of Au-Au Thermocompression Bonds, Realized at Low 167 Temperature N. Malik, H. Tofteberg, E. Poppe, T. G. Finstad, K. Schjolberg-Henriksen

Chapter 5 Temporary Wafer Bonding

Temporary Wafer Bonding by Polyelectrolyte Interlayers 179 M. Eichler, H. Dillmann, L. C. Reim, M. Thomas, C. P. Klages

Delamination Root Cause in Temporary Bonding 187 K. Vial, F. Fournel, M. Wimplinger, J. Burggraf, J. Bravin, P. Montméat, M. Pellat

Chapter 6 III-V Wafer Bonding Applications

(Invited) Wafer Bonding: An Integration Route for Hybrid III-V/SiGe CMOS on 199 300mm L. Czornomaz, N. Daix, E. Uccelli, V. Djara, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J. M. Hartmann, J. Fompeyrine

(Invited) Heterogeneously Integrated III-V on Silicon Lasers 211 B. Ben Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, S. Menezo

Effects of Miscut Substrates on Electrical Conductivity Across InP and GaAs 225 Wafer-Bonded Structures J. McKay, M. Seal, K. Yeung, M. Jackson, M. S. Goorsky

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Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for 235 Hybrid Tandem Cells N. Shigekawa, J. Liang, M. Morimoto, S. Nishida

Chapter 7 Wafer Bonding for MEMS and Packaging

(Invited) Wafer-Bonding for MEMS – Status and Trends 245 R. Hausner

(Invited) Wafer-Level Integration of Embedded Cooling Approaches 253 S. Paredes, Y. Madhour, G. Schlottig, C. L. Ong, T. Brunschwiler

Low-Temperature Solid-State Bonding Using Hydrogen Radical Treated Solder for 267 Optoelectronic and MEMS Packaging E. Higurashi, H. Kawai, T. Suga, S. Okada, T. Hagihara

Electrical, Mechanical, and Hermeticity Properties of Low-Temperature, Plasma 275 Activated Direct Silicon Bonded Joints K. Schjølberg-Henriksen, N. Malik, E. V. Gundersen, O. R. Christiansen, K. Imenes, S. T. Moe

Detailed Investgations of Inner Cavity Pressure of MEMS Devices Sealed by Wafer 285 Bonding R. Knechtel, S. Dempwolf, S. Hering

Low Activation Temperature Au/Ti Getter Films for Wafer-Level Vacuum Packaging 297 M. Wu, J. Moulin, G. Agnus, A. Bosseboeuf

Leak Rates and Residual Gas Pressure in Cavities Sealed by Metal 305 Thermo-Compression Bonding and Silicon Direct Bonding K. Schjølberg-Henriksen, N. Malik, A. Sandvand, G. Kittilsland, S. T. Moe

viii

Chapter 8 Metal Bonding and 3D-Integration

(Invited) Room Temperature Bonding Using Thin Metal Films (Bonding Energy and 317 Technical Potential) T. Shimatsu, M. Uomoto, H. Kon

(Invited) Reactive Bonding with Integrated Reactive and Nano Scale Energetic 329 Material Systems (iRMS): State-of-the-Art and Future Development Trends J. Braeuer, J. Besser, S. Hertel, R. Masser, W. Schneider, M. Wiemer, T. Gessner

Modeling and Integration Phenomena of metal-metal direct bonding technology 339 L. Di Cioccio, F. Baudin, P. Gergaud, V. Delaye, P. H. Jouneau, F. Rieutord, T. Signamarcheix

Voiding Phenomena in Copper-Copper Bonded Structures: Role of Creep 357 P. Gondcharton, B. Imbert, L. Benaissa, M. Verdier

Impact Factors on Low Temperature Cu-Cu Wafer Bonding 369 B. Rebhan, M. Wimplinger, K. Hingerl

Chapter 9 Other Wafer Bonding Applications

(Invited) Direct Bonding: A Key Enabler for 3D Monolithic Integration 381 L. Brunet, P. Batude, F. Fournel, L. Benaissa, C. Fenouillet-Beranger, L. Pasini, F. Deprat, B. Previtali, F. Ponthenier, A. Seignard, C. Euvrard-Colnat, M. Rivoire, P. Besson, C. Arvet, E. Beche, O. Rozeau, O. Billoint, O. Turkyilmaz, F. Clermidy, T. Signamarcheix, M. Vinet

Three-Dimensional Integration of Fully Depleted Silicon-on-Insulator Transistor 391 Substrates for CMOS Image Sensors Using Au/SiO2 Hybrid Bonding and XeF2 Etching K. Hagiwara, M. Goto, Y. Iguchi, H. Ohtake, T. Saraya, H. Toshiyoshi, E. Higurashi, T. Hiramoto

ix

Development of Materials Integration for Laser Gain Media: Single Crystals and 397 Ceramic (Polycrystalline) Materials and Applications J. McKay, T. Bai, M. S. Goorsky

Author Index 403

x