DOCSLIB.ORG

Packaging and Integration

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Packaging and Integration Xing Sheng, EE@Tsinghua Principles of Micro- and Nanofabrication for Electronic and Photonic Devices Packaging and Integration Xing Sheng 盛 兴 Department of Electronic Engineering Tsinghua University [email protected] 1 Xing Sheng, EE@Tsinghua Packaging Si wafers IC chips Video 3 Xing Sheng, EE@Tsinghua Packaging Si wafers IC chips test, wafer thinning, dicing, bonding, ... 4 Xing Sheng, EE@Tsinghua Probe Test 5 Xing Sheng, EE@Tsinghua Wafer Thinning typically, ~100 m can be as thin as 20 m 6 Xing Sheng, EE@Tsinghua Wafer Thinning 7 Xing Sheng, EE@Tsinghua Dicing laser saw plasma ... 8 Xing Sheng, EE@Tsinghua Wire Bonding 9 Xing Sheng, EE@Tsinghua 'Flip-Chip' Die Bonding Metals alloys: Pb, Cu, Ag, Sn, ... low melting point 10 Xing Sheng, EE@Tsinghua Eutectic Bonding Au Si 11 Xing Sheng, EE@Tsinghua Infrared Imaging Si is transparent at near-infrared (> 1100 nm) 12 Xing Sheng, EE@Tsinghua Through-Silicon Via (TSV) Conductive channels through the silicon wafer 13 Xing Sheng, EE@Tsinghua Through-Silicon Via (TSV) Conductive channels through the silicon wafer 14 Xing Sheng, EE@Tsinghua Silicon Interposer A conductive interface between chips and substrates interposer Q: Why shall we use Si? 15 Xing Sheng, EE@Tsinghua Memory Chips . Increase the memory volume by 3D chip stacks 16 Xing Sheng, EE@Tsinghua 2D -> 2.5D - 3D reduced size, faster speed, higher performance, ... Video 17 Xing Sheng, EE@Tsinghua 3D IC . Logic + Memory + Sensing + ... conventional 3D IC M. M. Shulaker, et al., Nature 547, 74 (2017) 18 Xing Sheng, EE@Tsinghua Chip Packaging Q: Why is the package black? 19 Xing Sheng, EE@Tsinghua X-ray Inspection of Circuit X-ray image 20 Xing Sheng, EE@Tsinghua X-ray Inspection of Circuit M. Holler. et al., Nature 543, 402 (2017) 21 Xing Sheng, EE@Tsinghua Wafer Bonding when direct growth is difficult ... Si SiO2 Si 22 Xing Sheng, EE@Tsinghua Wafer Bonding . Direct wafer-wafer bonding very clean and smooth surface o high temperature (> 1000 C) for atom diffusion Si SiO2 Si 23 Xing Sheng, EE@Tsinghua Wafer Bonding . Direct bonding . Surface activated bonding . Plasma activated bonding . Anodic bonding . Eutectic bonding . Glass frit bonding . Adhesive bonding . Thermocompression bonding . Reactive bonding . Transient liquid phase diffusion bonding . ... https://en.wikipedia.org/wiki/Wafer_bonding 24 Xing Sheng, EE@Tsinghua Wafer Bonding: Applications 25 Xing Sheng, EE@Tsinghua Make Silicon-on-Insulator (SOI) Bonding + Etch back 26 Xing Sheng, EE@Tsinghua Make Silicon-on-Insulator (SOI) 'Smart-Cut' 27 Xing Sheng, EE@Tsinghua MEMS . Micro-Electro-Mechanical Systems (MEMS) Digital Micromirror Device (DMD) Video 28 Xing Sheng, EE@Tsinghua MEMS 29 Xing Sheng, EE@Tsinghua III-V Lasers on Si 30 Xing Sheng, EE@Tsinghua Multijunction (MJ) Solar Cells Eg1 Eg2 Eg3 solar spectrum e- 1.5 (AM1.5G) e- /nm) 2 1.0 0.5 h+ h+ h+ Power Power (W/m 1J: = 37% 0.0 500 1000 1500 2000 2J: = 50% Wavelength (nm) 3J: = 56% ASTM G173-03 infinite J: = 72% Use the entire solar spectrum W. Shockley and H. A. Queisser, J. Appl. Phys. 32, 510 (1961) C. H. Henry, J. Appl. Phys. 51, 4494 (1980) 31 Xing Sheng, EE@Tsinghua Stacked MJ Solar Cells bonded AlGaInP/GaAs // GaInAsP/GaInAs solar cells GaAs GaInAs AlGaInP GaInAsP World record efficiency: 46% F. Dimroth, et al., IEEE J. Photovolt. 6, 343 (2016) 32 Xing Sheng, EE@Tsinghua UV and IR Imaging Sensors . Silicon only absorbs well from 400 nm to 1100 nm . IR sensors: InGaAs, HgCdTe, ... UV sensors: GaN, ... sensor arrays bonded with Si circuits infrared imaging T. Shuto, et al., Jpn. J. App. Phys. 53, 04EB01 (2014) 33 Xing Sheng, EE@Tsinghua Red LEDs . AlGaInP red LEDs grown on GaAs substrates . GaAs strongly absorbs red light . GaP is transparent in red, but not lattice matched . bond LEDs on GaP, and remove GaAs F. A. Kish, et al., App. Phys. Lett. 64, 2839 (1994) 34 Xing Sheng, EE@Tsinghua Blue LEDs . GaN blue LEDs grown on sapphire substrates . Sapphire is electrically and thermally insulating . bonded onto a thermally conductive substrate 35.
Load more

Recommended publications
  • Localized Parylene-C Bonding with Reactive Multilayer Foils
    Home Search Collections Journals About Contact us My IOPscience Localized Parylene-C bonding with reactive multilayer foils This content has been downloaded from IOPscience. Please scroll down to see the full text. 2009 J. Phys. D: Appl. Phys. 42 185411 (http://iopscience.iop.org/0022-3727/42/18/185411) View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 149.169.115.242 This content was downloaded on 09/02/2015 at 04:04 Please note that terms and conditions apply. IOP PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 42 (2009) 185411 (6pp) doi:10.1088/0022-3727/42/18/185411 Localized Parylene-C bonding with reactive multilayer foils Xiaotun Qiu1, Jie Zhu1, Jon Oiler2, Cunjiang Yu3, Ziyu Wang2 and Hongyu Yu1,2 1 Department of Electrical Engineering, Arizona State University, Tempe, AZ, 85287, USA 2 School of Earth and Space Exploration, Arizona State University, Tempe, AZ, 85287, USA 3 Department of Mechanical and Aerospace Engineering, Arizona State University, Tempe, AZ, 85287, USA Received 1 June 2009, in final form 12 July 2009 Published 4 September 2009 Online at stacks.iop.org/JPhysD/42/185411 Abstract This paper describes a novel bonding technique using reactive multilayer Ni/Al foils as local heat sources to bond Parylene-C layers to another Parylene-C coating on a silicon wafer. Exothermic reactions in Ni/Al reactive multilayer foils were investigated by x-ray diffraction (XRD) and differential scanning calorimetry. XRD measurements showed that the dominant product after exothermic reaction was ordered B2 AlNi compound.
    [Show full text]
  • Reactive Multilayer Foils and Their Applications in Joining Xiaotun Qiu Louisiana State University and Agricultural and Mechanical College, [email protected]
    Louisiana State University LSU Digital Commons LSU Master's Theses Graduate School 2007 Reactive multilayer foils and their applications in joining Xiaotun Qiu Louisiana State University and Agricultural and Mechanical College, [email protected] Follow this and additional works at: https://digitalcommons.lsu.edu/gradschool_theses Part of the Mechanical Engineering Commons Recommended Citation Qiu, Xiaotun, "Reactive multilayer foils and their applications in joining" (2007). LSU Master's Theses. 2091. https://digitalcommons.lsu.edu/gradschool_theses/2091 This Thesis is brought to you for free and open access by the Graduate School at LSU Digital Commons. It has been accepted for inclusion in LSU Master's Theses by an authorized graduate school editor of LSU Digital Commons. For more information, please contact [email protected]. REACTIVE MULTILAYER FOILS AND THEIR APPLICATIONS IN JOINING A Thesis Submitted to the Graduate Faculty of the Louisiana State University and Agricultural and Mechanical College in partial fulfillment of the requirements for the degree of Master of Science in Mechanical Engineering in The Department of Mechanical Engineering By Xiaotun Qiu B.S., Tsinghua University, Beijing, China, 2004 August, 2007 ACKNOWLEDGEMENTS I wish to thank my advisor, Dr. Jiaping Wang, for providing me a chance to work on such an innovative project, which paved the way to build my thesis. It is such a great privilege working with her and she is such an inspiration that she got the best out of me. I am also indebted to Dr. Laszlo Kecskes for helping me to conduct the DSC experiment for the cold rolled multilayer foils. I am very thankful to Dr.
    [Show full text]
  • Efficient Joining Using Reactive Multilayer Systems
    ECEMP – European Centre for Emerging Materials and Processes Dresden EFFICIENT JOINING USING REACTIVE MULTILAYER SYSTEMS Autoren Dietrich, G.1*, Pflug, E.2, Rühl, M.2, Braun, S.1, Leson, A.1, Beyer, E.2 1 Fraunhofer Institute Material and Beam Technologies (IWS), Dresden, Germany 2 Technical University of Dresden, Dresden, Germany * Contact: Dipl.-Ing. G. Dietrich, Scientist Fraunhofer Institute Material and Beam Technologies (IWS), Winterbergstrasse 28, 01277 Dresden, Germany E-mail: [email protected] ECEMP-Sprecher:II Prof. Dr.-Ing. habil. Prof. E. h. Dr. h. c. Werner A. Hufenbach Technische Universität Dresden, Marschnerstraße 39, 01307 Dresden Tel.: 0351 463 38446 Fax: 0351 463 38449 C1 E-Mail: [email protected] INHALTSVERZEICHNIS 1 ABSTRACT .................................................................................................................... 3 2 PRINCIPLE OF REACTIVE MULTILAYER SYSTEMS (RMS) ......................................... 4 Seite 2 1 Abstract 1 ABSTRACT Established joining techniques like welding, soldering or brazing typically are characterized by a large amount of heat input into the components. Especially in the case of heat sensitive structures like MEMS this often results in stress induced deformation and degradation or even in damaging the parts. Therefore, there is an urgent need for a more reliable and reproducible method for joining, which is characterized by a well defined and small heat input for only a short time period. So-called reactive nanometer multilayers offer a promising approach to meet these needs. Reactive nanometer multilayers consist of several hundreds or thousands of alternating nanoscale layers, which can exothermicly react with each other. Placing a reactive nanometer multilayer coated with a solder or brazing layer between two surfaces, it can be used as a controllable local heat source for joining.
    [Show full text]
  • System Packaging 1 2 3 4 5
    FRAUNHOFER INSTITUTE FOR ELECTRONIC NANO SYSTEMS ENAS SYSTEM PACKAGING 1 2 3 4 5 The actual developments of micro and nano technologies are Versatile packaging technologies are focused by the depart- MEMS Packaging and 3D Integration The following key aspects outline the department’s work in the fascinating. Undoubted they are playing a key role in today’s ment System Packaging and its applied research. In addition The importance of MEMS packaging can be deduced from field of MEMS packaging: product development and technical progress. With a large to packaging of MEMS and NEMS at different levels of the its share of production costs of a micro system. Herein, ma- variety of different devices, different technologies and materials packaging hierarchy, also micro and nano patterning of surface nufacturing costs range from 20 to 95 percent, whereas this Wafer level packaging and MEMS packaging they enable the integration of mechanical, electrical, optical, areas in micro systems technology is a further main topic. wide margin results from specific application requirements. The 3D integration with feedthroughs (Through Silicon chemical, biological, and other functions into one system on MEMS package has to allow access for the desired media to be Via – TSV) minimum space. Besides different wafer bonding techniques, such as silicon di- measured, like liquids, gases or light, but at the same it has to Wafer, chip, and wire bonding rect bonding, anodic, eutectic, adhesive, and glass frit bonding, protect the sensing part from undesired external influences, and Nano imprint lithography and hot embossing The Fraunhofer Institute for Electronic Nano Systems ENAS in technologies such as laser assisted bonding, reactive bonding thus to guarantee long-term functionality.
    [Show full text]
  • V64N5 Title Copyright.Indd
    Semiconductor Wafer Bonding 13: Science, Technology, and Applications Editors: H. Moriceau R. Knechtel CEA-LETI X-FAB MEMS Foundry GmbH Grenoble, France Erfurt, Germany H. Baumgart T. Suga Old Dominion University University of Tokyo Norfolk, Virginia, USA Tokyo, Japan M. S. Goorsky C. S. Tan University of California, Los Angeles Nanyang Technological University Los Angeles, California, USA Singapore K. D. Hobart Naval Research Laboratory Washington, DC, USA Sponsoring Division: Electronics and Photonics Published by TM The Electrochemical Society 65 South Main Street, Building D Pennington, NJ 08534-2839, USA Vol. 64, No. 5 tel 609 737 1902 fax 609 737 2743 www.electrochem.org Copyright 2014 by The Electrochemical Society. All rights reserved. This book has been registered with Copyright Clearance Center. For further information, please contact the Copyright Clearance Center, Salem, Massachusetts. Published by: The Electrochemical Society 65 South Main Street Pennington, New Jersey 08534-2839, USA Telephone 609.737.1902 Fax 609.737.2743 e-mail: [email protected] Web: www.electrochem.org ISSN 1938-6737 (online) ISSN 1938-5862 (print) ISSN 2151-2051 (cd-rom) ISBN 978-1-62332-185-7 (Soft Cover) ISBN 978-1-60768-542-5 (PDF) Printed in the United States of America. ECS Transactions, Volume 64, Issue 5 Semiconductor Wafer Bonding 13: Science, Technology, and Applications Table of Contents Preface iii Chapter 1 Fundamentals of Wafer Bonding (Invited) Glass-Glass Direct Bonding 3 G. Kalkowski, S. Risse, U. Zeitner, F. Fuchs, R. Eberhardt, A. Tünnermann Fracture Dynamics during the Silicon Layer Transfer of the Smart Cut™ Process 13 D. Massy, F. Mazen, J.
    [Show full text]
  • 1979 International Microelectronics Symposium
    Electrocomponent Science and Technology, 1980, Vol. 6, pp. 97-118 (C) 1980 Gordon and Breach Science Publishers, Inc. 0305 3091/80/0602-0097 $04.50/0 Printed in Great Britain 1979 INTERNATIONAL MICROELECTRONICS SYMPOSIUM 1979 INTERNATIONAL MICROELECTRONICS SYMPOSIUM 13-15 November The following Abstracts are taken from the Proceedings of the 1979 International Microelectronics Symposium held in Los Angeles, California. These Abstracts are published with the kind permission of the International Society for Hybrid Microelectronics, U.S.A., under whose auspices the Symposium was organised. Copies of the full Proceedings may be obtained from: I.S.H.M. Headquarters PO Box 3255 MONTGOMERY Alabama 36109 U.S.A. Prices: I.S.H.M. Members $25.00 per copy Non-members $3O.OO Bulk orders (over 10 copies) I.S.H.M. member organisations $15.00 per copy Non-member organisations $20.00 per copy All prices quoted include handling and postage by surface carrier to all addresses. List of Papers SESSION 1A SESSION 2A HYBRID MICROCIRCUIT TESTING/ANALYSIS THICK.FILM PROCESSING A Universal Probing Technique for Continuity and A New Approach to Thick-Film Resistors by David F. Isolation Testing of Thick-Film Multilayer Circuits Zarnow, Naval Avionics Center, Indianapolis, IN by Robert L. Schelhorn, RCA, Moorestown, NJ Microstructural Studies of Thick-Film Resistors An Experimentally Verified Heat Transfer Model Using Transmission Electron Microscopy by Terry V. for Integrated Circuit Packages by Dale C. Buhanan Nordstrom and Charles R. Hills, Sandia Labs, and E. A. Wilson, Honeywell, Phoenix, AZ Albuquerque, NM Characterization of Burst Noise in Thick-Film Optical Alignment of Screen Printers for Liquid Resistors by Andrew Norrell, Malcolm Grierson, Crystal Displays by Jeffrey Green and Richard Myers, and Dr.
    [Show full text]
  • Development of a Bonding Concept for MOEMS Packaging: Reactive Nanocomposites
    Development of a Bonding Concept for MOEMS Packaging: Reactive Nanocomposites Zur Erlangung des akademischen Grades eines Doktors der Ingenieurwissenschaften (Dr.-Ing.) bei der KIT-Fakultät für Maschinenbau des Karlsruher Instituts für Technologie (KIT) angenommene Dissertation von Dipl.-Ing. Matthias Peter Kremer Hauptreferent: Prof. Dr. Andreas E. Guber Korreferenten: Prof. Dr. Jan G. Korvink, Prof. Dr. Bernhard Wolf Prüfungsvorsitz: Prof. Dr.-Ing. Xu Cheng Tag der mündlichen Prüfung: 19.11.2018 KIT – Universität des Landes Baden-Württemberg und nationales Forschungszentrum in der Helmholtz-Gemeinschaft www.kit.edu This document is licensed under a Creative Commons Attribution- NoDerivatives 4.0 International License (CC BY-ND 4.0): https://creativecommons.org/licenses/by-nd/4.0/deed.en Für Julia und Emilie Die Liebe ist im Grunde die Kraft und die Macht, die allein das Leben lebenswert machen kann. (Konrad Adenauer) Acknowledgements This thesis is the outcome of my work at CTR Carinthian Tech Research AG during the last three years. It was a very nice time and I felt privileged about being able to live in such a wonderful surrounding as Villach, to work with great colleagues and pursuing my academic degree by a very renowned university in Germany. I want to thank a lot of people: First of all, I have to thank Prof. Dr.-Ing. Andreas E. Guber (Karlsruhe Institute of Technology – Institute of Microstructure Technology) for supervision and support- ing this work even from a distance, for helpful discussions and personal advice. I would like to thank Prof. Dr. Jan G. Korvink (Karlsruhe Institute of Technology – Institute of Microstructure Technology) and Prof.
    [Show full text]
  • Reliable Fine-Pitch Chip-To-Substrate Copper Interconnections with High-Throughput Assembly and High Power-Handling
    RELIABLE FINE-PITCH CHIP-TO-SUBSTRATE COPPER INTERCONNECTIONS WITH HIGH-THROUGHPUT ASSEMBLY AND HIGH POWER-HANDLING A Dissertation Presented to The Academic Faculty by Ninad Makarand Shahane In Partial Fulfillment of the Requirements for the Degree Doctorate of Philosophy in the School of Material Science and Engineering Georgia Institute of Technology August 2018 COPYRIGHT © 2018 BY NINAD MAKARAND SHAHANE RELIABLE FINE-PITCH CHIP-TO-SUBSTRATE COPPER INTERCONNECTIONS WITH HIGH-THROUGHPUT ASSEMBLY AND HIGH POWER-HANDLING Approved by: Dr. Rao R. Tummala, Advisor Dr. Pulugurtha Raj Markondeya School of Electrical and Computer School of Electrical and Computer Engineering Engineering Georgia Institute of Technology Georgia Institute of Technology Dr. Antonia Antoniou, Co-Advisor Dr. Preet Singh School of Mechanical Engineering School of Material Science Engineering Georgia Institute of Technology Georgia Institute of Technology Dr. Naresh Thadhani Dr. Vanessa Smet School of Material Science Engineering School of Electrical and Computer Georgia Institute of Technology Engineering Georgia Institute of Technology Date Approved: June 18, 2018 Dedicated to my parents, Makarand and Seema And to my love, Damini ACKNOWLEDGEMENTS I would like to express my sincere gratitude to my advisor, Professor Rao R. Tummala for his vision and ambition, his close guidance towards interdisciplinary research, and for providing extraordinary opportunities of close cooperation with industry partners. I would also like to thank my co-advisor Prof. Antonia Antoniou for exceptional guidance. Her constant push towards deep scientific inquiry encouraged and inspired me towards completing this Ph.D. thesis. I also thank my committee members, Professor Naresh Thadhani, Professor Preet Singh, Dr. Vanessa Smet and Dr.
    [Show full text]
  • United States Patent (10) Patent N0.: US 7,335,572 B2 Tong Et A]
    US007335572B2 (12) United States Patent (10) Patent N0.: US 7,335,572 B2 Tong et a]. (45) Date of Patent: Feb. 26, 2008 (54) METHOD FOR LOW TEMPERATURE 3,534,467 A 10/1970 Sachs et a1. BONDING AND BONDED STRUCTURE 3,579,391 A 5/1971 Buie 3,587,166 A 6/1971 Alexander et a1. (75) Inventors: Qin-Yi Tong, Durham, NC (US); Gains (Continued) Gillman Fountain, Jr., Youngsville, NC (U S); Paul M. Enquist, Cary, NC FOREIGN PATENT DOCUMENTS (Us) EP 0 905 767 A1 3/1999 (73) Assignee: Ziptagnix, Inc., Research Triangle Park, (Continued) NC S OTHER PUBLICATIONS ( ) Nonce' SubJeCt.tO any dlsclalmer’. the term of thls SchulZe et al., “Investigation of Bonded Silicon-Silicon-Interfaces Patent 15 extended Or adlusted under 35 Using Scanning Acoustic Microscopy”, Proceedings of the Second U~S~C- 15403) by 90 days' International Symposium on Microstructures and Microfabricated (21) A 1 N 10/762 318 Systems, Proceedings vol. 95-27, pp. 309-318, no date. pp . 0.: ’ (Continued) (22) Flled: Jan' 23’ 2004 Primary Examiner4George Fourson 65 P - P bl - t - D t Assistant Examineriloannie Adelle Garcia ( ) nor u lea Ion a a (74) Attorney, Agent, or F irm4Oblon, Spivak, McClelland, US 2004/0152282 A1 Aug. 5, 2004 Maier & Neustadt, P.C. Related US. Application Data (57) ABSTRACT (63) gogmilgagggoof applgatni? N6o'9gg/ggg’2s3’ ?led on A method for bonding at loW or room temperature includes 6 ' ’ ’ now a ' O‘ ’ ’ ' steps of surface cleaning and activation by cleaning or (51) Int. Cl. etching . The method ma y also include removing b y - P rod H0 1L 21/30 (2006 01) ucts of interface polymerization to prevent a reverse poly ' _ _ _ meriZation reaction to alloW room temperature chemical (52) US‘ Cl‘ """""""""" " £35192’ bonding of materials such as silicon, silicon nitride and 58 F 1d fCl _? t_ s h ’ 438/406 SiO2.
    [Show full text]
  • (12) United States Patent (10) Patent No.: US 7,041,178 B2 Tong Et Al
    US007041178B2 (12) United States Patent (10) Patent No.: US 7,041,178 B2 Tong et al. (45) Date of Patent: May 9, 2006 (54) METHOD FOR LOW TEMPERATURE 3,607,466 A 9/1971 Miyazaki BONDING AND BONDED STRUCTURE 3,640,807 A 2/1972 Van Dijk 3,647,581 A 3, 1972 Mash (75) Inventors: Qin-Yi Tong. Durham, NC (US); Gaius 3,888,708 A 6, 1975 Wise et al. Gillman Fountain, Jr., Youngsville, 4.416,054 A 11/1983 Thomas et al. NC (US); Paul M. Enquist, Cary, NC 4,612,083. A 9, 1986 Yasumoto et al. (US) (Continued) (73) Assignee: Ziptronix, Inc., Triangle Park, NC (US) FOREIGN PATENT DOCUMENTS (*) Notice: Subject to any disclaimer, the term of this JP 541 16888. A 3, 1978 patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days. (Continued) OTHER PUBLICATIONS (21) Appl. No.: 10/460,418 Tong et al., “Low Temperature Wafer Direct Bonding, Mar. (22) Filed: Jun. 13, 2003 1994, IEEE, Journal of Microelectromechanical Systems, vol. 3, No. 1, pp. 29-35.* (65) Prior Publication Data US 2003/0211705 A1 Nov. 13, 2003 (Continued) Primary Examiner George Fourson Related U.S. Application Data Assistant Examiner Joannie Adelle Garcia (62) Division of application No. 09/505,283, filed on Feb. (74) Attorney, Agent, or Firm Oblon, Spivak, McClelland, 16, 2000, now Pat. No. 6,902,987. Maier, Neustadt, P.C. (51) Int. C. (57) ABSTRACT HOIL 2L/48 (2006.01) (52) U.S. Cl. ..................... 148/33.4; 438/459:438/485; A method for bonding at low or room temperature includes 438/974: 148/DIG.
    [Show full text]
  • Plasma-Activated Fusion Bonding for Vacuum Encapsulation of Microdevices Joel Soman Louisiana Tech University
    Louisiana Tech University Louisiana Tech Digital Commons Doctoral Dissertations Graduate School Fall 2011 Plasma-activated fusion bonding for vacuum encapsulation of microdevices Joel Soman Louisiana Tech University Follow this and additional works at: https://digitalcommons.latech.edu/dissertations Part of the Engineering Commons Recommended Citation Soman, Joel, "" (2011). Dissertation. 365. https://digitalcommons.latech.edu/dissertations/365 This Dissertation is brought to you for free and open access by the Graduate School at Louisiana Tech Digital Commons. It has been accepted for inclusion in Doctoral Dissertations by an authorized administrator of Louisiana Tech Digital Commons. For more information, please contact [email protected]. PLASMA-ACTIVATED FUSION BONDING FOR VACUUM ENCAPSULATION OF MICRODEVICES by Joel Soman, M.S., B.E. A Dissertation Presented in Partial Fulfillment of the Requirements For the Degree Doctor of Philosophy COLLEGE OF ENGINEERING AND SCIENCE LOUISIANA TECH UNIVERSITY November 2011 UMI Number: 3492486 All rights reserved INFORMATION TO ALL USERS The quality of this reproduction is dependent upon the quality of the copy submitted. In the unlikely event that the author did not send a complete manuscript and there are missing pages, these will be noted. Also, if material had to be removed, a note will indicate the deletion. UMT Dissertation Publishing UMI 3492486 Copyright 2012 by ProQuest LLC. All rights reserved. This edition of the work is protected against unauthorized copying under Title 17, United
    [Show full text]
  • Novel Approach for Reactive Bonding in Microsystems Technology
    IOSR Journal of Applied Physics (IOSR-JAP) e-ISSN: 2278-4861.Volume 8, Issue 6 Ver. III (Nov. - Dec. 2016), PP 60-66 www.iosrjournals.org Novel approach for Reactive Bonding in Microsystems Technology Andreas Tortschanoff1, Matthias Kremer1,2 1CTR AG, Europastrasse 12, 9524 Villach, Austria 2IMT, KIT, Hermann-von-Helmholtz-Platz 1,Eggenstein-Leopoldshafen,Germany Abstract: In this work, first results of the development of highly reactive nanocomposites based on metallic nanoparticles for joining components for micro-electro-mechanical systems are presented. Reactive joining of micro-components received much attention in the last decade, as it enables the connection of components without the entire system being exposed to prolonged heat-load. This is important especially for the integration of different materials in microsystems as intrinsic stresses due to large differences in the thermal coefficient of expansion can be prevented. Here we present the general idea and very first results concerning the reactivity of different material combinations. Keywords: reactive bonding, nano-composite, self-sustaining high-temperature synthesis I. Introduction Exothermic reactions have been used since more than a century as an energy source for welding and soldering [1]. Thermite welding has a long tradition mainly in railroad track construction. Here, a self- sustaining, exothermic redox reaction is started at the joining point, forming elemental iron as a reaction product. The reaction temperature during the process is so high that the iron is liquid and fills the joining gap. In this way a permanent connection of the parts to be joined is formed after solidification. In the last decade the ideas of self-sustaining high temperature synthesis have been adopted for microsystems technology [2,3].
    [Show full text]