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Nanoimprint Lithography and Applications

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Nanoimprint Lithography and Applications Nanoimprint Lithography and Applications Wei Wu Department of Electrical Engineering University of Southern California [email protected] IEEE Nanotechnology Council The IEEE Nanotechnology Council (NTC) is a multi-disciplinary group whose purpose is to advance and coordinate work in the field of Nanotechnology carried out throughout the IEEE in scientific, literary and educational areas. • The IEEE Nanotechnology Council is part of Division I – Circuits and Devices and is made up of 22 member societies • Publications: • IEEE Transactions on Nanotechnology (T-NANO) • IEEE Nanotechnology Magazine (INM) • IEEE Nanotechnology Express (ENANO) • IEEE Transactions on NanoBioscience (T-NB) • IEEE Transactions on Molecular, Biological, and Multi-Scale Communications (T-MBMC) • IEEE Journal on Exploratory Solid State Computational Devices and Circuits (xCDC) • And several conferences http://sites.ieee.org/nanotech/ Outline • Motivation • Nanoimprint lithography • Helium ion beam lithography • Nanoimprint lithography + Helium ion beam lithography • Color reflective display based on nano- photonics • Working principle • Fabrication • Characterization • Summary Single-digit Nanometer Era 2023 9.5 *Lithography for flash, ITRS roadmap 2013 update Photolithography • Process used to transfer a pattern from a photomask to the surface of a substrate • Formation of images with visible or ultraviolet radiation in a photoresist • Most widely used lithography system. Source: Britney Spears guide to Semiconductor Physics http://britneyspears.ac/lasers.htm Problem of Photolithography: of Light Used Has Not Scaled with Resolution Moore’s law feature size shrinks 0.7 times every two years λ 700 Feature_ Size k1 Rayleigh's equation NA I-line 600 DUV 193 nm 500 400 300 Wavelength (nm) Wavelength 200 100 157 nm is dead Quartz is opaque 0 700 600 500 400 300 200 100 0 Node/Half-pitch (nm) Next generation lithography (NGL) tools: Extreme UV lithography (EUV) –Extremely expensive (Light source, complex optical system, expensive and fragile mask, defects count) X-ray lithography –Expensive light source (synchrotron preferred) –Mask material E-beam direct write lithography (EBL) –Extremely slow (serial process) E-beam projection lithography (EPL) –Mask material –Distortion due to heat Nanoimprint Lithography (NIL) Mold Resist Substrate Chou, Krauss, and Renstrom, APL, Vol. 67, 3114 (1995); Science, Vol. 272, 85 (1996) M. Colburn, A. Grot, G. Wilson’s et al SPIE 2000 Nanoimprint Lithography (NIL) Mold Resist SubstrateSubstrate Nanoimprint Lithography (NIL) Mold Resist SubstrateSubstrate Nanoimprint Lithography High resolution -not limited by wavelength High throughput -parallel process Low cost UV-curable NIL with Double-layer Spin-on Resist 1. Prepare substrate, spin transfer 4. Mold and substrate layer and liquid imaging layer on separation 2. Alignment 5. Residue layer and under layer etching UV 3. Press and exposure 6. Metal evaporation and lift-off or etching W. Wu, G. Y. Jung, D. L. Olynick, et al., Applied Physics a-Materials Science & Processing 80, 1173 (2005). “Ls” in Resist at 12 nm Half-pitch by NIL 5nm Sharp Isolated line corners Dense lines W. Wu, W. M. Tong, J. Bartman, et. al., Nano Lett. 8 (11), 3865-3869 (2008). Nanoimprinted Dot array in Resist at 10 nm Half-pitch “Ls” in Resist at 8 nm Half-pitch by NIL Low Information Content Patterns Using a Carbone nanotube mold Using a supper lattice mold Hua et al, Nano Lett., 2004 Austin et al, Nanotech. 2005 Great demonstration of resolution, but they have low information content and not enough for most applications How to Achieve Better Resolution than Electron Beam Lithography? Smallest half-pitch patterned by EBL in HSQ: 4.5 nm Yang et al, J. Vac. Sci. Techno. 2009 The Limiting Factor of EBL Resolution limiting factors of electron beam (with a perfect resist): Spot size Beam scattering Second electron (forward and backward) generation ~ 4 nm Proximity effect 10 nm ~ microns Overall beam spot diameter 2 2 2 2 d d g ds dc dd (assume no astigmation) d d : virtual source diameter d v v g M M: demagnefication 1 d C3 Spherical aberration s 2 s V d C Chromatic aberration c c V 1.2 d 1.22 , nm Diffraction d V Beam spot: 3.5 Å ~$2M Latest Helium Ion Microscope Rearranged tungsten atoms Typical trimer image on HP HIM for bright helium ion source B.W. Ward et al, J. Vac. Sci. Technol. B, 2006 0.24 nm record imaging resolution was demonstrated using HIM From Carl Zeiss Overall beam spot diameter 2 2 2 2 d d g ds dc dd (assume no astigmation) d d : virtual source diameter d v v g M M: demagnefication 1 d C3 Spherical aberration s 2 s V d C Chromatic aberration c c V 1.2 d 1.22 , nm Diffraction d V He Ion is Scattered Over Shorter Ranges 35 KeV Electrons 35 KeV He+ W.-D. Li, W. Wu and R. S. Williams, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 30 (6), 06F304 (2012). He Ion: Much Less Proximity Effect Beam scattering Small spot + little proximity effect --> better beam for lithography! Helium Ion Beam Lithography V. Sidorkin et al, J. Vac. Sci. Technol. B, 2009 D. Winston et al, J. Vac. Sci. Technol. B, 2009 HIBL for Sub-5 nm Patterning on HSQ Resist 5 nm half pitch 4 nm half pitch 4 nm 5 nm half-pitch half-pitch W.-D. Li, W. Wu and R. S. Williams, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 30 (6), 06F304 (2012). He Ion: Much Less Proximity Effect Beam scattering •Small spot + little proximity effect --> better beam for lithography! Issues with He ion beam: •Slow (low beam current) •He ion beam is not for every substrate (He bubble formation) Helium Bubbles Combination of HIBL and NIL to Reach Single-digit Design at Low-cost and High Throughput 1. Fabricate NIL template using a scanning helium ion beam Expecting superior resolution compared with EBL based fabrication 2. NIL to transfer high-resolution patterns Molecular resolution; low cost; and high throughput 3. Device fabrication at sub-10 nm Nanoimprint Using HIBL Template Template after HIBL HSQ and development Silicon Mold Short exposure to O plasma and 2 release coating of mold release agent agent UV nanoimprint using HIBL template UV-curable NIL resist Fused silica Imprinted Resist with 4-nm Half-pitch Lines 12 nm half 5 nm half pitch pitch 4 nm half pitch Sample coated with 2 nm platinum and imaged under XL30 SEM at 20kV W.-D. Li, W. Wu and R. S. Williams, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 30 (6), 06F304 (2012). 5 nm Half Pitch Lines Patterned in 10 nm Thick Chromium He+ beam 20 nm Si3N4 membrane 10 nm chromium 8 nm half 5 nm half pitch pitch Nanoimprint of 3D Patterns • NIL duplicates 3-D nanostructures into a transparent UV-cured polymer • High aspect ratio and resolution patterning (<10 nm in tip radius, ~ 2 mm in height) • Si master is fabricated Bosch etching process Si polymer with Au W. Wu, M. Hu, F. S. Ou, Z. Y. Li and R. S. Williams, Nanotechnology 21 (25), - (2010) Patterning on Non-flat Substrate 200nm pitch gratings on the surface of an optical fiber with 125 μm diameter Li, Z. W., Gu, Y. N., Wang, L., Ge, H. X., Wu, W., Xia, Q. F., . Williams, R. S., Nanoletters 9(6), 2306-2310 (2009) Hybrid Soft PDMS/Hard Crest Mold for UV-NIL Elastic polymer Rigid polymer Anti-adhesion layer Mold Imprinted resist Mold Roll-to-roll Nanoimprint for Low-cost Large-Area Patterning Home-built roll-to-roll NIL system in my lab Cost Study Example: Bit-patterned Magnetic Media According to the study by hard drive industry: • NIL is the only economically practical approach to pattern BPM • The cost of patterning both side of a 3.5” disk is less than $2 in mass production Nano-crossbar Circuits Color Reflective Display Based on Nanophotonics Reflective Display Ambient light only • Sunlight readability • Printing-like • Low power consumption https://kindle.amazon.com/ No commercial color reflective display on market Display Architectures RGB additive model • Red, green and blue sub-pixels • Parallel arrangement A single pixel 33 % Color filter inside LCD RGB Display Single-layer architecture Electrophoretic Color Display RGBW Color filters Brightness Not working yet Kwak, Y., Park, J., & Park, D. S. (2008). Mirasol Display Qualcomm Mirasol Interferometric Modulation MEMS Brightness https://www.qualcomm.com/products/miraso l/technology Stack Architectures Three-layer Architecture Ideal efficiency: 100 % 100 % Brightness Color filters inside • Performance of filters Saturation (Gamut) • Reflection spectra of filters Contrast • Method to tune reflectance Three-layer architecture Ideal Reflection Spectra Brightness • Reflectance • Efficiency 1 • Loss Saturation (Gamut) Reflectance 0 • overlapping 400 500 600 700 Contrast Wavelength (nm) Reflection spectra of color filters Electrowetting Display Three-layer Colored ink Challenge? • No Ink has square function like spectrum Electrowetting Displays A paper by Johan Feenstra & Rob Hayes High Contrast Grating Resonance Re-radiate Interfere HCG A surface-emitting laser incorporating a high-index-contrast subwavelength Grating (HCG) A.S.P. Chang, H. Tan, S. Bai, W. Wu,Schematic Z. Yu, S.Y. Chou, “Tunable diagram External Cavityof GMR Laser With devicea Liquid-Crystal Subwavelength Huang, M. C. Y., Y. Zhou, et al. (2007). "A surface-emitting laser incorporating a high-index- Resonant Grating Filter as Wavelength-Selectivecontrast subwavelength Mirror”, Photonicsgrating." Nat TechnologyPhoton 1(2): 119 Letters,-122. IEEE, 19(2007) 1099-1101 M. Shokooh-Saremi,
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