Fabrication of a Nanoimprint Lithography Mask for Improved Infrared Detectors

Total Page:16

File Type:pdf, Size:1020Kb

Fabrication of a Nanoimprint Lithography Mask for Improved Infrared Detectors FABRICATION OF A NANOIMPRINT LITHOGRAPHY MASK FOR IMPROVED INFRARED DETECTORS Isha Datye Faculty Mentor: Dr. Sanjay Krishna Graduate Student Mentor: John Montoya The Center for High Technology Materials The University of New Mexico, Albuquerque, NM 87131 Undergraduate Student of The Department of Electrical and Computer Engineering The University of Illinois at Urbana-Champaign Urbana, IL 61801 ABSTRACT Infrared photodetectors will require new technologies on the pixel level to provide spectral information for the development of polarimetric and color images. Current infrared photodetectors have nearly identical pixels over a broad spectral range, resulting in black-and-white images. Scientists have been researching the idea of an infrared retina, which is similar in function to cones in the human eye, to produce multi-color images. A multi-color infrared camera system can be accomplished by tuning individual pixels to a specific infrared “color” with the aid of resonant structures patterned onto a photodetector’s surface. In addition, a resonant structure can also improve a detector’s detectivity (D*, a measure of the signal to noise ratio) or increase the operating temperature. One of the key limitations of present day technology is the difficulty in making deep subwavelength structures on a large scale. This research paper will focus on the fabrication of a nanoimprint lithography mask to pattern resonant structures on a scale that would make this multi-color technology ready for mass fabrication. Research has been conducted on nanoimprint lithography and it has proven to be a very efficient method to pattern structures on substrates with nanoscale precision. The goal for this project was to pattern complicated resonant structures on a substrate for the development of a multi-color infrared camera. 1. INTRODUCTION visible light, which has wavelengths from about 400 nm to 750 nm. Infrared detectors, The infrared region of the electromagnetic photodetectors that respond to infrared spectrum has wavelengths from 0.75 radiation, have made significant microns to 1000 microns, longer than that of improvements since they were first developed. Although there are several photodetectors. As one can see, these images different divisions within the infrared are based on the intensity of light to provide region, the mid-wavelength (MWIR) and a false color image. Next generation long-wavelength (LWIR) infrared regions photodetectors will be able to provide are most important for infrared detector spectral information based on the technologies, since they include the wavelength of light. wavelengths at which most objects emit radiation. For example, humans emit radiation at a wavelength of 10 microns, which is in the LWIR range [1]. There is an increased emphasis on obtaining hyperspectral and hyperpolarimetric sensitive detectors for night vision, missile tracking, medical diagnostics, and environmental monitoring applications [1- 3]. The development of frequency-selective surface technology on the pixel level has the a) b) potential to provide enhanced infrared detection for a desired wavelength of radiation. Since it was first developed in the Figure 1. (a) [18] Infrared images of the human 1960s, infrared imaging technology, body showing areas of muscle pain in the back especially in the area of focal plane arrays, and post-operative inflammation in the knee. has made significant improvements in (b) [19] Infrared detector images showing a jet producing an image. A focal plane array, a helicopter and jet engine. device that converts an optical image into an electrical signal that can then be processed 1.1 Background or stored, is the core of a long wavelength imaging sensor [14]. The first generation In the past decade, new infrared detector consisted of a single pixel or a one- technologies, such as quantum dot infrared dimensional array of pixels that required a photodetectors (QDIPs), quantum well mechanical sweep to produce a two- infrared photodetectors (QWIPs), quantum dimensional image [1]. The second dots-in-a-well infrared photodectors generation now consists of a two (DWELL), and superlattice structures (SLS), dimensional array of pixels to produce an have been developed with ever increasing image, eliminating any need for moving operating temperatures. Infrared parts [1]. Third generation infrared cameras photodetectors that can operate at room will consist of a two dimensional array of temperature can significantly reduce their pixels that can pass spectral information at cost of operation and therefore expand their room temperature, which is similar in use for everyday applications [2]. QWIPs, function to cones in the human eye [1]. generally made with GaAs materials [17], Although significant improvements have are already well-known and are available been made by the infrared detector commercially [3]. However, they have many community, infrared images that are truly shortcomings and are generally thought to multi-color are not readily available. A few be inferior to QDIPs [2]. For example, examples are given in figure 1 to QDIPs do not require diffraction gratings to demonstrate images taken with conventional couple normally incident light [2]. Because of this, there is one step less in the fabrication of QDIPs than in the fabrication are still interested in exploring new of QWIPs. QDIPs are similar to QWIPs in technologies that can take even better structure; the quantum well is substituted images and can incorporate more elements with a quantum dot [17]. QDIPs are such as color, polarization, and dynamic generally constructed with InAs dots on range. GaAs substrates [17]. An image of a QDIP structure is shown in figure 2. QDIPs can operate at higher temperatures as a result of having a lower dark current [2]. Figure 3. Image of a quantum dots-in-a-well structure, showing the InAs quantum dot in an InGaAs quantum well. Figure 2. [20] The image on the left shows a 10- layer InGaAs/GaAs QDIP structure, and the image on the right shows a diagram of a QDIP in Currently, all of the pixels in an infrared an electric field. camera are nearly identical, creating black- and-white images instead of images of different colors [15]. Scientists would like to The DWELL structure, a cross between change this by integrating multispectral QDIPs and QWIPs with InAs quantum dots capability on the pixel level. An example of in an InGaAs quantum well [3], has also multispectral imaging is shown in figure 4. been proven to have low dark currents, and They have been researching the concept of higher operating temperatures [3]. Similar to an infrared retina, which would act similarly QDIPs, these detectors allow normal to the cones in a human eye in the incidence, which ultimately provides better information conveyed in the images [1]. In control over the operating wavelength [16]. order to create this infrared retina, either A DWELL structure is shown in figure 3. plasmonics or matamaterials can be used. InAs/GaSb type-II strain layer superlattices Current infrared detector technology, can in also operate at higher temperatures, have a general, be improved with the aid of higher detectivity, high efficiency, and some resonant structures of a given design to multi-color capability [2], although not on a provide a higher operating temperature, large scale. This is the most promising spectral information on the pixel level, and a technology, but it also the most expensive. higher detectivity [3]. This project will focus on the development of a nanoimprint 2. MOTIVATION FOR PROJECT lithography mask for the fabrication of these resonant structures. Initially, a simple Although the current infrared detector nanoimprint lithography mask will be technologies have made many created to imprint an array of posts. These improvements in their images, researchers simple structures can aid in the fabrication of surface plasmon (SP) diffraction gratings, the beam and the surface normal to the which have been shown to enhance the sample. In electron beam lithography (EBL), signal received by an infrared photodetector a beam of electrons is scanned in a pattern [13]. A simple nanoimprint lithography across a surface with photoresist to create mask can be used to establish a fabrication small structures in the resist that can then be process for the creation of nanoimprint transferred to the substrate. masks with complicated features, such as metamaterials. Metamaterials are artificial materials that have properties usually not found in nature. They offer a huge advantage over SP structures because they can be created for pixels with a small size [5]. They can be engineered to have a negative index of refraction, meaning that the light is bent around the object rather than transmitted through or reflected away from (a) it [5]. Narrow-band perfect absorbers can be created because of the electric permittivity and magnetic permeability of metamaterials [5]. They can control and interact with infrared radiation only if their structures have wavelengths similar to those of the infrared light waves with which they interact [5]. (b) 3. RESEARCH OBJECTIVE Figure 4. (a) [21] In the top right picture, an object is detected that wouldn’t be seen with the human eye. (b) [22] In the bottom three pictures, different parts of This project focused on the fabrication of a a flame can be seen with an infrared detector. mask through different forms of lithography, such as interferometric and electron beam lithography, to pattern metamaterial EBL is generally used to make integrated structures. Lithography is a technique used circuits and masks [10, 12]. Although useful to transfer patterns onto a substrate. for creating interesting, repetitive patterns, Interferometric lithography is a process in electron beam lithography cannot be which a laser beam is split into two beams, performed on a large scale because it is one going directly to the sample and one extremely slow and expensive [10]. going to mirror and then reflected to the However, it can be used on a single sample sample, thereby creating an interference and then nanoimprint lithography can be pattern [8].
Recommended publications
  • Nanoimprint Lithography: Methods and Material Requirements**
    REVIEW DOI: 10.1002/adma.200600882 Nanoimprint Lithography: Methods and Material Requirements** By L. Jay Guo* Nanoimprint lithography (NIL) is a nonconventional lithographic technique for high-throughput patterning of polymer nanostructures at great precision and at low costs. Unlike traditional lithographic ap- proaches, which achieve pattern definition through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the resist material and can therefore achieve resolutions beyond the limitations set by light diffraction or beam scattering that are encountered in conventional techniques. This Review covers the basic principles of nanoimprinting, with an emphasis on the requirements on materi- als for the imprinting mold, surface properties, and resist materials for successful and reliable nanostructure replication. 1. Introduction proaches towards nanostructure fabrication have been exploited in the past 15 years, without resorting to expensive The ability to fabricate structures from the micro- to the tools such as those used in deep-UV projection lithography nanoscale with high precision in a wide variety of materials is and electron-beam lithography. These techniques include [1] of crucial importance to the advancement of micro- and nano- microcontact printing (or soft lithography), nanoimprint [2] technology and the nanosciences. The semiconductor industry lithography (NIL), scanning-probe-based techniques (e.g., [3] has been pushing high-precision nanoscale lithography to atomic force microscope lithography), and dip-pen lithogra- [4] manufacture ever-smaller transistors and higher-density inte- phy. A good overview of several of these techniques was [5] grated circuits (ICs). Critical issues, such as resolution, relia- presented in a recent paper.
    [Show full text]
  • Bilayer, Nanoimprint Lithography Brian Faircloth Nuvonyx, Inc., Bridgeton, Missouri 63044 Henry Rohrs Washington University, St
    Bilayer, nanoimprint lithography Brian Faircloth Nuvonyx, Inc., Bridgeton, Missouri 63044 Henry Rohrs Washington University, St. Louis, Missouri 63130 Richard Tiberio Cornell University, Ithaca, New York 14853 Rodney Ruoff Washington University, St. Louis, Missouri 63130 Robert R. Krchnaveka) Rowan University, Glassboro, New Jersey 08028 ͑Received 3 May 1999; accepted 21 April 2000͒ Nanoimprint lithography has been shown to be a viable means of patterning polymer films in the sub-100 nm range. In this work, we demonstrate the use of a bilayer resist to facilitate the metal liftoff step in imprinter fabrication. The bilayer resist technology exhibits more uniform patterns and fewer missing features than similar metal nanoparticle arrays fabricated with single layer resist. The bilayer resist relies upon the differential solubility between poly͑methyl methacrylate͒ and poly͑methyl methacrylate methacrylic acid copolymer͒. Evidence is presented that shows the technique has a resolution of better than 10 nm. © 2000 American Vacuum Society. ͓S0734-211X͑00͒03104-8͔ I. INTRODUCTION tion demonstrated in the polymer resist layer. The formation of patterned metal layers is one application. Finely patterned Due to the inevitable transition from the microelectronic metal layers are used as interconnects in integrated circuits. to the nanoelectronic age, the demand for sub-100 nm fea- They can also be used as catalysts for subsequent layer ture sizes in lithographic techniques will increase greatly. As growth. If the subsequent metal layers cannot readily be current devices rapidly approach the 100 nm barrier, the mi- etched, e.g., due to crystalline dependent etching rates, an croelectronics industry is considering several technologies to additive approach such as liftoff is desirable.
    [Show full text]
  • Chapter 2 Nanoimprint Lithography
    Chapter 2 Nanoimprint Lithography 2.1 INTRODUCTION Electron beam lithography is not only the workhorse in research when pattern sizes in the sub-100-nm range are envisaged; it is also the current technique for optical mask fabrication for device production of pattern sizes of 1-2 µm and below. Moreover, it is the only production-proven technique for pattern sizes beyond optical lithography. Shaped beam techniques have been developed in order to increase productivity, where writing speed and writing fields of production systems have been improved substantially. Furthermore, projection systems such as SCALPEL (scattering with angular limitation projection electron beam lithography) have been developed where contrast is obtained by scattering of electrons out of the optical system [1]. Nevertheless, electron beam lithography is a technique with limited throughput, leading to high costs in device production. The contest of lithography techniques for reliable fabrication of future integrated nanometer-scaled devices is not yet settled. In order for progress to be made, enabling nanofabrication techniques as tools for experiments to understand the underlying science and engineering in the nanometer scale, easily accessible and flexible nanofabrication approaches are required. Alternative techniques to cost-intensive or limited-access fabrication methods with nanometer resolution have been under development for nearly two decades. The literature on the subject is increasing very rapidly and recent reviews on progress in micro-contact printing
    [Show full text]
  • Large-Area Nanoimprint Lithography and Applications
    Chapter 3 Large-Area Nanoimprint Lithography and Applications Hongbo Lan Additional information is available at the end of the chapter http://dx.doi.org/10.5772/intechopen.72860 Abstract Large-area nanoimprint lithography (NIL) has been regarded as one of the most prom- ising micro/nano-manufacturing technologies for mass production of large-area micro/ nanoscale patterns and complex 3D structures and high aspect ratio features with low cost, high throughput, and high resolution. That opens the door and paves the way for many commercial applications not previously conceptualized or economically feasible. Great progresses in large-area nanoimprint lithography have been achieved in recent years. This chapter mainly presents a comprehensive review of recent advances in large- area NIL processes. Some promising solutions of large-area NIL and emerging methods, which can implement mass production of micro-and nanostructures over large areas on various substrates or surfaces, are described in detail. Moreover, numerous industrial- level applications and innovative products based on large-area NIL are also demon- strated. Finally, prospects, challenges, and future directions for industrial scale large- area NIL are addressed. An infrastructure of large-area nanoimprint lithography is proposed. In addition, some recent progresses and research activities in large-area NIL suitable for high volume manufacturing environments from our Labs are also intro- duced. This chapter may provide a reference and direction for the further explorations and studies of large-area micro/nanopatterning technologies. Keywords: large-area nanoimprint lithography, large-area micro/nanopatterning, full wafer NIL, roller-type NIL, roll-to-plate NIL, roll-to-roll NIL 1.
    [Show full text]
  • And Nanolithography Techniques and Their Applications
    Review on Micro- and Nanolithography Techniques and their Applications Alongkorn Pimpin* and Werayut Srituravanich** Department of Mechanical Engineering, Faculty of Engineering, Chulalongkorn University, Pathumwan, Bangkok 10330, Thailand E-mail: [email protected]*, [email protected]** Abstract. This article reviews major micro- and nanolithography techniques and their applications from commercial micro devices to emerging applications in nanoscale science and engineering. Micro- and nanolithography has been the key technology in manufacturing of integrated circuits and microchips in the semiconductor industry. Such a technology is also sparking revolutionizing advancements in nanotechnology. The lithography techniques including photolithography, electron beam lithography, focused ion beam lithography, soft lithography, nanoimprint lithography and scanning probe lithography are discussed. Furthermore, their applications are summarized into four major areas: electronics and microsystems, medical and biotech, optics and photonics, and environment and energy harvesting. Keywords: Nanolithography, photolithography, electron beam lithography, focused ion beam lithography, soft lithography, nanoimprint lithography, scanning probe lithography, dip-pen lithography, microsystems, MEMS, nanoscience, nanotechnology, nano-engineering. ENGINEERING JOURNAL Volume 16 Issue 1 Received 18 August 2011 Accepted 8 November Published 1 January 2012 Online at http://www.engj.org DOI:10.4186/ej.2012.16.1.37 DOI:10.4186/ej.2012.16.1.37 1. Introduction For decades, micro- and nanolithography technology has been contributed to the manufacturing of integrated circuits (ICs) and microchips. This advance in the semiconductor and IC industry has led to a new paradigm of the information revolution via computers and the internet. Micro- and nanolithography is the technology that is used to create patterns with a feature size ranging from a few nanometers up to tens of millimeters.
    [Show full text]
  • Nano-Lithography
    15-398 Introduction to Nanotechnology Pushing The Limits of Photolithography • Reduce wavelength (λ) Nanoscale Lithography • Use Reducing Lens • Increase Numerical Aperture (NA) of Lens Seth Copen Goldstein – E.g., Immersion optics [email protected] •Hacks (k1) CMU – PSM, OPC, RET, off-axis illumination • Rayleigh eqn: min-feature-size=k1λ/NA lecture 4 © 2004-5 Seth Copen Goldstein 1 lecture 4 © 2004-5 Seth Copen Goldstein 2 Trends in λ, NA, k1 NA & Immersion ICKnowledge.com • NA = n sinα = d/(2f) – N is index of refraction of medium – α is angle of acceptance •Air, n=1 • Water, n≅1.47 • Result -> improve min linewidth 30%! CUHG, Chap 5. lecture 4 © 2004-5 Seth Copen Goldstein 3 lecture 4 © 2004-5 Seth Copen Goldstein 4 E-Beam? FIB? Example of E-beam patterning • Use high-energy electrons to alter/ablate a resist P = 40 nm P = 45 nm • Issues: – Secondary electrons – Scattering in resist (or off substrate) – Serial process P = 50 nm P = 60 nm – alignment Handbook of Microlithography, Micromachining and lecture 4 © 2004-5 Seth Copen Goldstein Microfabrication, SPIE (1997)5 lectureUofA, 4 Nanolithography © 2004-5 Seth Copen Goldstein 6 Microelectronics isn’t everything Today • Reactive organics • Soft Lithography/Nanoimprint • 3-D structures • Scanning Probe Lithography • Edge Lithography • Top-down fabrication to create nanoscale features using a physical mold or tip for patterning. lecture 4 © 2004-5 Seth Copen Goldstein 7 lecture 4 © 2004-5 Seth Copen Goldstein 8 Soft Litho Basic Example • Replica Molding transfer features from master to
    [Show full text]
  • Nanolithography
    Chapter 8 Nanolithography Gunasekaran Venugopal and Sang-Jae Kim Additional information is available at the end of the chapter http://dx.doi.org/10.5772/55527 1. Introduction Nanolithography is the branch of nanotechnology concerned with the study and application of the nanofabrication of nanometer-scale structures, meaning nanopatterning with at least one lateral dimension between the size of an individual atom and approximately 100 nm. The term nanolithography is derived from the Greek words “nanos”, meaning dwarf; “lithos”, meaning rock or stone; and “graphein” meaning to write. Therefore the literal translation is "tiny writing on stone", however nowadays one understands something different whenever this term is associated with nanotechnology. Nanolithography is used e.g. during the nano‐ fabrication of leading-edge semiconductor integrated circuits (nanocircuitry), for nanoelec‐ tromechanical systems (NEMS) or for almost any other fundamental application across various scientific disciplines in nanoresearch. This technology can be suitable to use in nanofabrication of various semiconducting Integrated Circuits (ICs), NEMS and for various applications in research. The modification in semicon‐ ductor chips at the nano-scale (in the range of 10-9 meter) is also possible. This method is contrasting to various existing nanolithographic techniques like Photolithography (Venugo‐ pal, 2011), Nanoimprint lithography (NIL), Scanning Probe Lithography (SPL), Atomic Force Microscope (AFM) nanolithography, Extreme Ultraviolet Lithography (EUVL) and X-ray Lithography. In this chapter, the various nanolithographic fabrication techniques will be discussed in detail in which we will focus the various nano-patterning techniques/procedures suitable for device fabrication and their engineering applications. This technique is mainly used for nanofabrica‐ tion.
    [Show full text]
  • UV Nanoimprint Lithography: Geometrical Impact on Filling Properties of Nanoscale Patterns
    nanomaterials Article UV Nanoimprint Lithography: Geometrical Impact on Filling Properties of Nanoscale Patterns Christine Thanner and Martin Eibelhuber * EV Group, DI Erich Thallner Str. 1, 4782 St. Florian am Inn, Austria; [email protected] * Correspondence: [email protected] Abstract: Ultraviolet (UV) Nanoimprint Lithography (NIL) is a replication method that is well known for its capability to address a wide range of pattern sizes and shapes. It has proven to be an efficient production method for patterning resist layers with features ranging from a few hundred micrometers and down to the nanometer range. Best results can be achieved if the fundamental behavior of the imprint resist and the pattern filling are considered by the equipment and process parameters. In particular, the material properties and pattern size and shape play a crucial role. For capillary force-driven filling behavior it is important to understand the influencing parameters and respective failure modes in order to optimize the processes for reliable full wafer manufacturing. In this work, the nanoimprint results obtained for different pattern geometries are compared with respect to pattern quality and residual layer thickness: The comprehensive overview of the relevant process parameters is helpful for setting up NIL processes for different nanostructures with minimum layer thickness. Keywords: nanoimprint lithography; UV-NIL; SmartNIL Citation: Thanner, C.; Eibelhuber, M. UV Nanoimprint Lithography: Geometrical Impact on Filling Properties of Nanoscale Patterns. 1. Introduction Nanomaterials 2021, 11, 822. Since it was first mentioned in literature [1], nanoimprint lithography (NIL) emerged https://doi.org/10.3390/ into an attractive patterning technique and developed considerably in terms of materials, nano11030822 process technology, and equipment.
    [Show full text]
  • Fabrication of 60-Nm Transistors on 4-In. Wafer Using Nanoimprint at All Lithography Levels Wei Zhanga) and Stephen Y
    APPLIED PHYSICS LETTERS VOLUME 83, NUMBER 8 25 AUGUST 2003 Fabrication of 60-nm transistors on 4-in. wafer using nanoimprint at all lithography levels Wei Zhanga) and Stephen Y. Chou NanoStructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 ͑Received 28 March 2003; accepted 10 June 2003͒ Nanoimprint lithography ͑NIL͒ is a paradigm-shift method that has shown sub-10-nm resolution, high throughput, and low cost. To make NIL a next-generation lithography tool to replace conventional lithography, one must demonstrate the needed overlay accuracy in multilayer NIL, large-area uniformity, and low defect density. Here, we present the fabrication of 60-nm channel metal–oxide–semiconductor field-effect transistors on whole 4-in. wafers using NIL at all lithography levels. The nanotransistors exhibit excellent operational characteristics across the wafer. The statistics from consecutive multiwafer processing show an average overlay accuracy of 500 nm over the entire 4-in. wafer. The accuracy is much better when the field size is reduced. The overlay accuracies are limited by the current alignment method and can be improved substantially. The work presents a significant advance in nanoimprint development and its applications in manufacturing of integrated electrical, optical, chemical, and biological nanocircuits. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1600505͔ Lithography, a key step in defining the size of micro/ can be a next-generation lithography to replace conventional nanodevices, is a critical tool for microchip manufacturing. lithography in IC manufacturing, NIL must demonstrate the Conventional lithography creates features based on the prin- needed overlay accuracy, large-area uniformity, and low de- ciple of using a radiation ͑e.g., light͒ to locally modify the fect density.
    [Show full text]
  • Soft Thermal Nanoimprint Lithography Using a Nanocomposite Mold
    Nano Research https://doi.org/10.1007/s12274-017-1900-0 Soft thermal nanoimprint lithography using a nanocomposite mold Viraj Bhingardive, Liran Menahem, and Mark Schvartzman () Department of Materials Engineering, Isle Katz Institute of Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 8410501, Israel Received: 6 September 2017 ABSTRACT Revised: 15 October 2017 Soft nanoimprint lithography has been limited to ultraviolet (UV) curable resists. Accepted: 25 October 2017 Here, we introduce a novel approach for soft thermal nanoimprinting. This unprecedented combination of the terms “soft” and “thermal” for nanoimprinting © Tsinghua University Press became possible thanks to an innovative nanocomposite mold consisting of a and Springer-Verlag GmbH flexible polydimethylsiloxane (PDMS) substrate with chemically attached rigid relief features. We used soft thermal nanoimprinting to produce high-resolution Germany 2017 nanopatterns with a sub-100 nm feature size. Furthermore, we demonstrate the applicability of our nanoimprint approach for the nanofabrication of thermally KEYWORDS imprinted nanopatterns on non-planar surfaces such as lenses. Our new soft lithography, nanofabrication strategy paves the way to numerous applications that require nanoimprint lithography, the direct fabrication of functional nanostructures on unconventional substrates. PDMS, non-planar substrates 1 Introduction nanopatterns produced by PDMS molds are practically free of defects. In addition, nanoimprint with soft Soft nanoimprinting is a versatile, high-throughput, molds does not require high pressure; it can be and cost-effective nanolithography method in which performed by gentle pressing with the thumb [6]. a nanoscale pattern is mechanically transferred onto Finally, flexible PDMS molds can be applied to a resist by an elastomeric mold.
    [Show full text]
  • Nanofabrication Techniques for Controlled Drug Release Devices
    Nanofabrication Techniques for Controlled Drug Release Devices Lei Chen*, Gerard Henein, and Vincent Luciani Center for Nanoscale Science and Technology National Institute of Standards and Technology 100 Bureau Drive, Stop 620-1, Gaithersburg, MD 20899-6201, USA *Corresponding Author Lei Chen Center for Nanoscale Science and Technology Nantional Institute of Standards and Technology 100 Bureau Drive, Stop 620-1, Gaithersburg, MD 20899-6201, USA Phone: 301-975-2908 Fax: 301-975-8761 Email: [email protected] Gerard Henein Center for Nanoscale Science and Technology Nantional Institute of Standards and Technology 100 Bureau Drive, Stop 620-1, Gaithersburg, MD 20899-6201, USA Vincent Luciani Center for Nanoscale Science and Technology Nantional Institute of Standards and Technology 100 Bureau Drive, Stop 620-1, Gaithersburg, MD 20899-6201, USA New drugs and delivery systems have undergone a rapid development in recent years for treating cancer, HIV aids, diseased organs, damaged nerves to relieve pain, preventing disease and restoring health to human beings (1). The application of nanotechnology in nanomedicne for drug delivery is a new field and has raised great attention. Compared to conventional drug delivery mechanisms, nano-scale systems can deliver the drugs to diseased cells directly and minimize damage to healthy cells, and they can also be made small enough to be implantable in the body. Alternatively, by modifying the shells of the drug, shells can release the drug automatically under certain stimuli. Nanoscale controlled-release drug systems provide highly selective and effective therapeutic modalities (2). Controlled-Release Drug Delivery Vehicles The first generation nanotechnology-based controlled-released drug products appeared around 2005.
    [Show full text]
  • Introduction to Nanolithography Introduction to Nanolithography
    Introduction to Nanolithography Junwei Su Mechanical Engineering University of Massachusetts Lowell [email protected] Outline • Introduction • Photolithography • SfSoft Lihithograp hy • Nanoimprint Lithography (NIL) • NIL System Overview • Conclusion Nanolithography Nanolithography is the branch of nanotechnology concerned with the stdtudy and applica tion of fbifabrica ting nanometer‐scale structures, meaning patterns with at least one lateral dimension between the size of an individual atom and approximately 100 nm. Introduction • Why we need micro/nano pattern? MEMS (Micro electronic mechanical system) A MEMS device optical switch ratcheted microgear [Sandia National Laboratories] (Sandia) (Sandia) Top‐down Versus Bottom‐up Top Down Process Bottom Up Process Start with bulk Start with bulk wafer wafer Apply layer of Alteeaeaor area of w aeafer photoresist where structure is to be created by adding polymer or seed Expose wafer with crystals or other UV light through techniques. mask and etch Grow or assemble wafer the structure on the area determined by Etched wafer with the seed crystals or desired pattern polymer. (self assembly) Similar results can be obtained through bottom-up and top-down processes Photolithography https://www.youtube.com/watch?v=1bxf9QRVesQ EUV lithography • Extreme ultraviolet lithography (also known as EUV or EUVL) is a next‐ generation lithography technology using an EUV wavelength, currently expected to be 13.5 nm. Photolithography Limits • It requir es epesexpensive instr um en ts adand facili ti es with high capital investment • Pattern resolution is limited by optical diffraction • The methods is not suitable for patterning all types of polymers, and only photosensitive resist materials can be directly patterned. • The technique requires harsh processing conditions.
    [Show full text]