CROW: a Low-Cost Substrate for Improving DRAM Performance, Energy Efficiency, and Reliability Hasan Hassan† Minesh Patel† Jeremie S

Total Page:16

File Type:pdf, Size:1020Kb

CROW: a Low-Cost Substrate for Improving DRAM Performance, Energy Efficiency, and Reliability Hasan Hassan† Minesh Patel† Jeremie S CROW: A Low-Cost Substrate for Improving DRAM Performance, Energy Efficiency, and Reliability Hasan Hassany Minesh Pately Jeremie S. Kimy§ A. Giray Yaglikciy Nandita Vijaykumary§ Nika Mansouri Ghiasiy Saugata Ghose§ Onur Mutluy§ yETH Zürich §Carnegie Mellon University ABSTRACT instruction and data cache miss rates, and 3) have low memory-level DRAM has been the dominant technology for architecting main parallelism. While manufacturers offer latency-optimized DRAM memory for decades. Recent trends in multi-core system design and modules [72, 98], these modules have significantly lower capac- large-dataset applications have amplified the role of DRAM asa ity and higher cost compared to commodity DRAM [8, 53, 58]. critical system bottleneck. We propose Copy-Row DRAM (CROW), Thus, reducing the high DRAM access latency without trading off a flexible substrate that enables new mechanisms for improving capacity and cost in commodity DRAM remains an important chal- DRAM performance, energy efficiency, and reliability. We use the lenge [17, 18, 58, 78]. CROW substrate to implement 1) a low-cost in-DRAM caching Second, the high DRAM refresh overhead is a challenge to im- mechanism that lowers DRAM activation latency to frequently- proving system performance and energy consumption. A DRAM accessed rows by 38% and 2) a mechanism that avoids the use of cell stores data in a capacitor that leaks charge over time. To main- short-retention-time rows to mitigate the performance and energy tain correctness, every DRAM cell requires periodic refresh opera- overhead of DRAM refresh operations. CROW’s flexibility allows tions that restore the charge level in a cell. As the DRAM cell size the implementation of both mechanisms at the same time. Our decreases with process technology scaling, newer DRAM devices evaluations show that the two mechanisms synergistically improve contain more DRAM cells than older DRAM devices [34]. As a re- system performance by 20.0% and reduce DRAM energy by 22.3% for sult, while DRAM capacity increases, the performance and energy memory-intensive four-core workloads, while incurring 0.48% extra overheads of the refresh operations scale unfavorably [7, 40, 64]. area overhead in the DRAM chip and 11:3 KiB storage overhead In modern LPDDR4 [73] devices, the memory controller refreshes in the memory controller, and consuming 1.6% of DRAM storage every DRAM cell every 32 ms. Previous studies show that 1) refresh capacity, for one particular implementation. operations incur large performance overheads, as DRAM cells can- not be accessed when the cells are being refreshed [7, 64, 76, 84]; KEYWORDS and 2) up to 50% of the total DRAM energy is consumed by the refresh operations [7, 64]. DRAM, memory systems, performance, power, energy, reliability Third, the increasing vulnerability of DRAM cells to various fail- ure mechanisms is an important challenge to maintaining DRAM 1 INTRODUCTION reliability. As the process technology shrinks, DRAM cells become DRAM has long been the dominant technology for architecting smaller and get closer to each other, and thus become more suscepti- main memory systems due to the high capacity it offers at low ble to failures [56, 64, 65, 70, 78, 91, 118]. A tangible example of such cost. As the memory demands of applications have been growing, a failure mechanism in modern DRAM is RowHammer [52, 79, 80]. manufacturers have been scaling the DRAM process technology to RowHammer causes disturbance errors (i.e., bit flips in vulnerable keep pace. Unfortunately, while the density of the DRAM chips has DRAM cells that are not being accessed) in DRAM rows physically been increasing as a result of scaling, DRAM faces three critical adjacent to a row that is repeatedly activated many times. challenges in meeting application demands [78, 82]: (1) high access These three challenges are difficult to solve efficiently by directly latencies and (2) high refresh overheads, both of which degrade sys- modifying the underlying cell array structure. This is because com- tem performance and energy efficiency; and (3) increasing exposure modity DRAM implements an extremely dense DRAM cell array to vulnerabilities, which reduces the reliability of DRAM. that is optimized for low area-per-bit [57, 58, 105]. Because of its First, the high DRAM access latency is a challenge to improving density, even a small change in the DRAM cell array structure may system performance and energy efficiency. While DRAM capac- incur non-negligible area overhead [58, 78, 112, 119]. Our goal in ity increased significantly over the last two decades [6, 35, 37, 57, this work is to lower the DRAM access latency, reduce the refresh 58, 105], DRAM access latency decreased only slightly [6, 58, 82]. overhead, and improve DRAM reliability with no changes to the The high DRAM access latency significantly degrades the perfor- DRAM cell architecture, and with only minimal changes to the mance of many workloads [14, 23, 28, 30, 123]. The performance DRAM chip. impact is particularly large for applications that 1) have working To this end, we propose Copy-Row DRAM (CROW), a flexible sets exceeding the cache capacity of the system, 2) suffer from high in-DRAM substrate that can be used in multiple different ways to ad- dress the performance, energy efficiency, and reliability challenges Permission to make digital or hard copies of all or part of this work for personal or of DRAM. The key idea of CROW is to provide a fast, low-cost classroom use is granted without fee provided that copies are not made or distributed duplicate select rows for profit or commercial advantage and that copies bear this notice and the full citation mechanism to in DRAM that contain data that on the first page. Copyrights for components of this work owned by others than the is most sensitive or vulnerable to latency, refresh, or reliability author(s) must be honored. Abstracting with credit is permitted. To copy otherwise, or issues. CROW requires only small changes in commodity DRAM republish, to post on servers or to redistribute to lists, requires prior specific permission chips. At a high level, CROW partitions each DRAM subarray into and/or a fee. Request permissions from [email protected]. ISCA ’19, June 22–26, 2019, Phoenix, AZ, USA two regions (regular rows and copy rows) and enables independent © 2019 Copyright held by the owner/author(s). Publication rights licensed to Associa- control over the rows in each region. The key components required tion for Computing Machinery. for independent control include 1) an independent decoder for the ACM ISBN 978-1-4503-6669-4/19/06...$15.00 copy rows and 2) small changes in the memory controller interface https://doi.org/10.1145/3307650.3322231 1 to address the copy rows. To store information about the state of DRAM chip. CROW-ref has two important properties that prior the copy rows (e.g., which regular rows are duplicated in which works [2, 3, 11, 12, 19, 33, 38, 49, 50, 64, 66, 69, 76, 83, 84, 86, 88, 107] copy rows), CROW implements a small CROW-table in the memory fail to address at the same time. First, to avoid using weak rows, controller (Section 3.3). CROW-ref does not require system software changes that compli- CROW takes advantage of the fact that DRAM rows in the same cate data allocation. Second, once our versatile CROW substrate is subarray share sense amplifiers to enable two types of interaction implemented, CROW-ref does not require any additional changes between a regular row and a copy row. First, CROW can activate in DRAM that are specific to enabling a new refresh scheme. (i.e., open) a copy row slightly after activating a regular row in Results Overview. Our evaluations show that CROW-cache the same subarray. Once the copy row is activated, the charge and CROW-ref significantly improve performance and energy ef- restoration operation in DRAM (used to restore the charge that was ficiency. First, our access latency reduction mechanism, CROW- drained from the cells of a row during activation) charges both the cache, provides 7.4% higher performance and consumes 13.3% less regular row and the copy row at once. The simultaneous charge DRAM energy, averaged across our 20 memory-intensive four-core restoration of the two rows copies the contents of the regular row workloads, while reserving only 1.6% of the DRAM storage capacity into the copy row, similar to the in-DRAM row copy operation for copy rows on a system with four LPDDR4 channels. Second, our proposed by RowClone [100]. Second, CROW can simultaneously refresh rate reduction mechanism, CROW-ref, improves system activate a regular row and a copy row that contain the same data. performance by 8.1% and reduces DRAM energy by 5.4%, averaged The simultaneous activation reduces the latency required to access across the same four-core workloads using the same system con- the data by driving each sense amplifier using the charge from two figuration with futuristic 64 Gbit DRAM chips. CROW-cache and cells in each row (instead of using the charge from only one cell in CROW-ref are complementary to each other. When combined with- one row, as is done in commodity DRAM). out increasing the number of copy rows available, the two mech- The CROW substrate is flexible, and can be used to implement a anisms together improve average system performance by 20.0% variety of mechanisms. In this work, we discuss and evaluate two and reduce DRAM energy consumption by 22.3%, achieving greater such novel mechanisms in detail: 1) CROW-cache, which reduces the improvements than either mechanism does alone. DRAM access latency (Section 4.1) and 2) CROW-ref, which reduces To analyze the activation and restoration latency impact of simul- the DRAM refresh overhead (Section 4.2).
Recommended publications
  • Zynq-7000 All Programmable Soc and 7 Series Devices Memory Interface Solutions User Guide (UG586) [Ref 2]
    Zynq-7000 AP SoC and 7 Series Devices Memory Interface Solutions (v4.1) DS176 April 4, 2018 Advance Product Specification • I/O Power Reduction option reduces average I/O Introduction power by automatically disabling DQ/DQS IBUFs and The Xilinx® Zynq®-7000 All Programmable SoC and internal terminations during writes and periods of 7 series FPGAs memory interface solutions cores provide inactivity high-performance connections to DDR3 and DDR2 • Internal VREF support SDRAMs, QDR II+ SRAM, RLDRAM II/RLDRAM 3, and • LPDDR2 SDRAM. Multicontroller support for up to eight controllers • Two controller request processing modes: DDR3 and DDR2 SDRAMs o Normal: reorder requests to optimize system throughput and latency This section discusses the features, applications, and functional description of Xilinx 7 series FPGAs memory o Strict: memory requests are processed in the order interface solutions in DDR3 and DDR2 SDRAMs. These received solutions are available with an optional AXI4 slave interface. LogiCORE™ IP Facts Table Core Specifics DDR3 SDRAM Features Supported Zynq®-7000 All Programmable SoC (1) • Component support for interface widths up to 72 bits Device Family 7series(2) FPGAs • Supported DDR3 Component and DIMM, DDR2 Single and dual rank UDIMM, RDIMM, and SODIMM Memory support Component and DIMM, QDR II+, RLDRAM II, RLDRAM 3, and LPDDR2 SDRAM Components • DDR3 (1.5V) and DDR3L (1.35V) Resources See Table 1. • 1, 2, 4, and 8 Gb density device support Provided with Core • 8-bank support Documentation Product Specification • x8 and x16 device
    [Show full text]
  • Micron Technology Inc
    MICRON TECHNOLOGY INC FORM 10-K (Annual Report) Filed 10/26/10 for the Period Ending 09/02/10 Address 8000 S FEDERAL WAY PO BOX 6 BOISE, ID 83716-9632 Telephone 2083684000 CIK 0000723125 Symbol MU SIC Code 3674 - Semiconductors and Related Devices Industry Semiconductors Sector Technology Fiscal Year 03/10 http://www.edgar-online.com © Copyright 2010, EDGAR Online, Inc. All Rights Reserved. Distribution and use of this document restricted under EDGAR Online, Inc. Terms of Use. UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 10-K (Mark One) ANNUAL REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES EXCHANGE ACT OF 1934 For the fiscal year ended September 2, 2010 OR TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES EXCHANGE ACT OF 1934 For the transition period from to Commission file number 1-10658 Micron Technology, Inc. (Exact name of registrant as specified in its charter) Delaware 75 -1618004 (State or other jurisdiction of (IRS Employer incorporation or organization) Identification No.) 8000 S. Federal Way, Boise, Idaho 83716 -9632 (Address of principal executive offices) (Zip Code) Registrant ’s telephone number, including area code (208) 368 -4000 Securities registered pursuant to Section 12(b) of the Act: Title of each class Name of each exchange on which registered Common Stock, par value $.10 per share NASDAQ Global Select Market Securities registered pursuant to Section 12(g) of the Act: None (Title of Class) Indicate by check mark if the registrant is a well-known seasoned issuer, as defined in Rule 405 of the Securities Act.
    [Show full text]
  • Understanding and Exploiting Design-Induced Latency Variation in Modern DRAM Chips
    Understanding and Exploiting Design-Induced Latency Variation in Modern DRAM Chips Donghyuk Leeyz Samira Khan@ Lavanya Subramaniany Saugata Ghosey Rachata Ausavarungniruny Gennady Pekhimenkoy{ Vivek Seshadriy{ Onur Mutluyx yCarnegie Mellon University zNVIDIA @University of Virginia {Microsoft Research xETH Zürich ABSTRACT 40.0%/60.5%, which translates to an overall system perfor- Variation has been shown to exist across the cells within mance improvement of 14.7%/13.7%/13.8% (in 2-/4-/8-core a modern DRAM chip. Prior work has studied and exploited systems) across a variety of workloads, while ensuring reli- several forms of variation, such as manufacturing-process- able operation. or temperature-induced variation. We empirically demon- strate a new form of variation that exists within a real DRAM 1 INTRODUCTION chip, induced by the design and placement of different compo- In modern systems, DRAM-based main memory is sig- nents in the DRAM chip: different regions in DRAM, based nificantly slower than the processor. Consequently, pro- on their relative distances from the peripheral structures, cessors spend a long time waiting to access data from require different minimum access latencies for reliable oper- main memory [5, 66], making the long main memory ac- ation. In particular, we show that in most real DRAM chips, cess latency one of the most critical bottlenecks in achiev- cells closer to the peripheral structures can be accessed much ing high performance [48, 64, 67]. Unfortunately, the la- faster than cells that are farther. We call this phenomenon tency of DRAM has remained almost constant in the past design-induced variation in DRAM.
    [Show full text]
  • Leveraging Heterogeneity in DRAM Main Memories to Accelerate Critical Word Access ∗
    Leveraging Heterogeneity in DRAM Main Memories to Accelerate Critical Word Access ∗ Niladrish Chatterjee‡ Manjunath Shevgoor‡ Rajeev Balasubramonian‡ Al Davis‡ Zhen Fang§† Ramesh Illikkal∞ Ravi Iyer∞ ‡University of Utah §Nvidia Corporation ∞Intel Labs {nil,shevgoor,rajeev,ald}@cs.utah.edu [email protected] {ramesh.g.illikkal,ravishankar.iyer}@intel.com Abstract of DRAM chips to build and exploit a heterogeneous memory sys- tem. This paper takes an important step in uncovering the potential The DRAM main memory system in modern servers is largely ho- of such a heterogeneous DRAM memory system. mogeneous. In recent years, DRAM manufacturers have produced The DRAM industry already produces chips with varying proper- chips with vastly differing latency and energy characteristics. This ties. Micron offers a Reduced Latency DRAM (RLDRAM) product provides the opportunity to build a heterogeneous main memory sys- that offers lower latency and lower capacity, and is targeted at high tem where different parts of the address space can yield different performance routers, switches, and network processing [7]. Mi- latencies and energy per access. The limited prior work in this area cron also offers a Low Power DRAM (LPDRAM) product that of- has explored smart placement of pages with high activities. In this fers lower energy and longer latencies and that has typically been paper, we propose a novel alternative to exploit DRAM heterogene- employed in the mobile market segment [6]. Our work explores ity. We observe that the critical word in a cache line can be easily innovations that can exploit a main memory that includes regular recognized beforehand and placed in a low-latency region of the DDR chips as well as RLDRAM and LPDRAM chips.
    [Show full text]
  • Dynamic Rams from Asynchrounos to DDR4
    Dynamic RAMs From Asynchrounos to DDR4 PDF generated using the open source mwlib toolkit. See http://code.pediapress.com/ for more information. PDF generated at: Sun, 10 Feb 2013 17:59:42 UTC Contents Articles Dynamic random-access memory 1 Synchronous dynamic random-access memory 14 DDR SDRAM 27 DDR2 SDRAM 33 DDR3 SDRAM 37 DDR4 SDRAM 43 References Article Sources and Contributors 48 Image Sources, Licenses and Contributors 49 Article Licenses License 50 Dynamic random-access memory 1 Dynamic random-access memory Dynamic random-access memory (DRAM) is a type of random-access memory that stores each bit of data in a separate capacitor within an integrated circuit. The capacitor can be either charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. Since capacitors leak charge, the information eventually fades unless the capacitor charge is refreshed periodically. Because of this refresh requirement, it is a dynamic memory as opposed to SRAM and other static memory. The main memory (the "RAM") in personal computers is dynamic RAM (DRAM). It is the RAM in laptop and workstation computers as well as some of the RAM of video game consoles. The advantage of DRAM is its structural simplicity: only one transistor and a capacitor are required per bit, compared to four or six transistors in SRAM. This allows DRAM to reach very high densities. Unlike flash memory, DRAM is volatile memory (cf. non-volatile memory), since it loses its data quickly when power is removed. The transistors and capacitors used are extremely small; billions can fit on a single memory chip.
    [Show full text]
  • Memory Systems Cache, DRAM, Disk
    Memory Systems Cache, DRAM, Disk Bruce Jacob University of Maryland at College Park Spencer W. Ng Hitachi Global Storage Technologies David T. Wang MetaRAM With Contributions By Samuel Rodriguez Advanced Micro Devices Xmmmk JÜOBSK'1'"'" AMSTERDAM • BOSTON • HEIDELBERG LONDON NEW YORK • OXFORD • PARIS • SAN DIEGO SAN FRANCISCO • SINGAPORE • SYDNEY • TOKYO :<* ELSEVIER Morgan Kaufmann is an imprint of Elsevier MORGAN KAUFMANN PUBLISHERS Preface "It's the Memory, Stupid!" xxxi Overview On Memory Systems and Their Design 1 Ov.l Memory Systems 2 Ov.1.1 Locality ofReference Breeds the Memory Hierarchy 2 Ov.1.2 ImportantFigures ofMerit 7 Ov.1.3 The Goal ofa Memory Hierarchy 10 Ov.2 Four Anecdotes on Modular Design 14 Ov.2.1 Anecdote I: Systemic Behaviors Exist 15 Ov.2.2 Anecdote II: The DLL in DDR SDRAM 17 Ov.2.3 Anecdote III: A Catch-22 in the Search for Bandwidth 18 Ov.2.4 Anecdote IV: Proposais to Exploit Variability in CellLeakage 19 Ov.2.5 Perspective 19 Ov.3 Cross-Cutting Issues 20 Ov.3.1 Cost/Performance Analysis 20 Ov.3.2 Power and Energy 26 Ov.3.3 Reliability 32 Ov.3.4 Virtual Memory 34 Ov.4 An Example Holistic Analysis 41 Ov.4.1 Fully-Buffered DIMM vs. the Disk Cache 41 Ov.4.2 FullyBufferedDIMM: Basics 43 Ov.4.3 Disk Caches: Basics 46 Ov.4.4 Experimental Results 47 Ov.4.5 Conclusions 52 Ov.5 What to Expect 54 IX - X Contents Part I Cache 55 Chapter 1 An Overview of Cache Principles 57 1.1 Caches, 'Caches/ and "Caches" 59 1.2 Locality Principles 62 1.2.1 Temporal Locality 63 1.2.2 Spatial Locality 63 1.2.3 Algorithmic Locality 64 1.2.4
    [Show full text]
  • MOCA: Memory Object Classification and Allocation in Heterogeneous Memory Systems
    MOCA: Memory Object Classification and Allocation in Heterogeneous Memory Systems Aditya Narayan∗, Tiansheng Zhang∗, Shaizeen Agay, Satish Narayanasamyy and Ayse K. Coskun∗ ∗Boston University, Boston, MA 02215, USA; Email: fadityan, tszhang, [email protected] yUniversity of Michigan, Ann Arbor, MI 48109, USA; Email: fshaizeen, [email protected] Abstract—In the era of abundant-data computing, main mem- Traditionally, the main memory (e.g., DRAM) of a com- ory’s latency and power significantly impact overall system puting system is composed of a set of homogeneous memory performance and power. Today’s computing systems are typically modules. The key attributes that determine the efficiency of a composed of homogeneous memory modules, which are optimized to provide either low latency, high bandwidth, or low power. Such memory system are latency, bandwidth, and power. An ideal memory modules do not cater to a wide range of applications with memory system should provide the highest data bandwidth diverse memory access behavior. Thus, heterogeneous memory at the lowest latency with minimum power consumption. systems, which include several memory modules with distinct However, there is no such perfect memory system as a memory performance and power characteristics, are becoming promising module with high performance generally has a high power alternatives. In such a system, allocating applications to their best-fitting memory modules improves system performance and density. Hence, memory modules come in different flavors, energy efficiency. However, such an approach still leaves the optimized to either improve system performance or reduce full potential of heterogeneous memory systems under-utilized power consumption. because not only applications, but also the memory objects within Due to diverse memory access behavior across workloads, a that application differ in their memory access behavior.
    [Show full text]
  • Techniquesfor
    TECHNIQUESFOR Design Examples, Signaling and Memory Technologies, Fiber Optics, Modeling and Simulation to Ensure Signal Zntegrity Tom Granberg, P1i.D. PRENTICEHALL PTR UPPER SADDLERIVER, NJ 07458 WWW.PHiTRCOM PTR Preface xxxvii How This Book 1s Organized xxxvii This Textbook Was Written with Educational Institutions in Mind xxxix University Courses for Which This Book 1s Suitable xl Solutions Manual 1s Available xl Cash for Identifying Textbook Errors xl How This Book Was Prepared xli Personal Acknowledgments xli Technical Acknowledgments xliii Part 1 Introduction 1 Chapter 1 Trends in High-Speed Design 1.1 Everything Keeps Getting Faster and Faster! 1.2 Emerging Technologies and Industry Trends 1.2.1 Major Drivers of Printed Circuit Board (PCB) Technology 1.2.2 Drivers of Innovation 1.2.3 110 Signaling Standards 1.2.4 Web Site as Retailer 1.2.5 Memories 1.2.6 On-Die Terminations 1.3 Trends in Bus Architecture 1.3.1 Moving from Parallel to Serial 1.3.2 The Power of Tools 1.3.3 ASSPs and ASMs 1.4 High-Speed Design as an Offshoot from Microwave Theory 1.5 Background Disciplines Needed for High-Speed Design 1.5.1 High-Speed Conferences and Forums 1.6 Book Organization 1.7 Exercises X Contents cha&er 2 ASICs, Backplane Configurations, and SerDes Technology 2.1 Application-Specific Integrated Circuits (ASICs) 2.2 Bus Configurations 2.2.1 Single-Termination Multidrop 2.2.2 Double-Termination Multidrop 2.2.3 Data Distribution with Point-to-Point Links 2.2.4 Multipoint 2.2.5 Switch Matrix Mesh und Fahric Point-to-Point Bus Architectures 2.3 SerDes Devices 2.3.1 SerDes Device Fundamentals 2.3.2 SerDes at 5 Gbps 2.3.3 SerDes Multibit Signal Encoding 2.4 Electrical Interconnects vs.
    [Show full text]
  • Zynq-7000 All Programmable Soc and 7 Series Devices Memory Interface Solutions User Guide (UG586) [Ref 2]
    Zynq-7000 AP SoC and 7 Series Devices Memory Interface Solutions (v2.3) DS176 June 24, 2015 Advance Product Specification Introduction • Strict: memory requests are processed in the order received The Xilinx® Zynq®-7000 All Programmable SoC and 7 series FPGAs memory interface solutions cores provide LogiCORE™ IP Facts Table high-performance connections to DDR3 and DDR2 Core Specifics SDRAMs, QDR II+ SRAM, RLDRAM II/RLDRAM 3, Supported Zynq®-7000All Programmable SoC, Virtex®-7(2), Kintex®-7(2), and LPDDR2 SDRAM. Device ® Family(1) Artix -7 Supported DDR3 Component and DIMM, DDR2 Component and DIMM, DDR3 and DDR2 SDRAMs Memory QDR II+, RLDRAM II, RLDRAM 3, and LPDDR2 SDRAM Components This section discusses the features, applications, and Resources See Table 1. functional description of Xilinx 7 series FPGAs memory interface solutions in DDR3 and DDR2 SDRAMs. These Provided with Core solutions are available with an optional AXI4 slave Documentation Product Specification User Guide interface. Design Files Verilog, VHDL (top-level files only) Example DDR3 SDRAM Features Design Verilog, VHDL (top-level files only) • Component support for interface widths up to 72 bits Test Bench Not Provided • Single and dual rank UDIMM, RDIMM, and Constraints XDC SODIMM support File • DDR3 (1.5V) and DDR3L (1.35V) Supported N/A • 1, 2, 4, and 8 Gb density device support S/W Driver • 8-bank support Tested Design Flows(3) • x8 and x16 device support Design Entry Vivado® Design Suite • 8:1 DQ:DQS ratio support Simulation For supported simulators, see the • Configurable data bus widths (multiples of 8, up to Xilinx Design Tools: Release Notes Guide.
    [Show full text]
  • External Memory Interface Handbook Volume 2: Design Guidelines
    External Memory Interface Handbook Volume 2: Design Guidelines Last updated for Altera Complete Design Suite: 15.0 Subscribe EMI_DG 101 Innovation Drive 2015.05.04 San Jose, CA 95134 Send Feedback www.altera.com TOC-2 Selecting Your Memory Contents Selecting Your Memory.......................................................................................1-1 DDR SDRAM Features............................................................................................................................... 1-2 DDR2 SDRAM Features............................................................................................................................. 1-3 DDR3 SDRAM Features............................................................................................................................. 1-3 QDR, QDR II, and QDR II+ SRAM Features..........................................................................................1-4 RLDRAM II and RLDRAM 3 Features.....................................................................................................1-4 LPDDR2 Features........................................................................................................................................ 1-6 Memory Selection........................................................................................................................................ 1-6 Example of High-Speed Memory in Embedded Processor....................................................................1-9 Example of High-Speed Memory in Telecom......................................................................................
    [Show full text]
  • I/O: a Detailed Example
    ECE 485/585 Microprocessor System Design Lecture 5: DRAM Basics DRAM Evolution SDRAM-based Memory Systems Zeshan Chishti Electrical and Computer Engineering Dept. Maseeh College of Engineering and Computer Science Sources: Lecture based on materials provided by Mark F. Jacob’s DRAM Systems article Memory component datasheets Outline Taxonomy of Memories Memory Hierarchy SRAM ◼ Basic Cell, Devices, Timing DRAM ◼ Basic Cell, Timing Memory Organization ◼ Multiple banks, interleaving DRAM Evolution DDR3 SDRAM DRAM modules Error Correction Memory Controllers ECE 485/585 Dynamic RAM (DRAM) ECE 485/585 DRAM Technology DRAM Cell • Write – Drive bit line word line – Select desired word (“row”) • Read – Pre-charge bit line Bit state (1 or 0) stored as – Select desired word (“row”) charge on a tiny capacitor – Sense charge bit line – Write value back (restore) 1 transistor • Refresh! – Periodically read each cell • (forcing write-back) Read is destructive → must restore value Charge leaks out over time → refresh ECE 485/585 Volatile Memory Comparison SRAM Cell DRAM Cell word line word line bit line bit line bit line Larger cell Smaller cell ◼ lower density, higher cost/bit ◼ higher density, lower cost/bit Non-destructive Read Destructive Read No refresh required Needs periodic refresh Simple read faster access Complex read longer access time Standard IC process natural for Special IC process difficult to integration with logic integrate with logic circuits Non-multiplexed address lines Multiplexed address lines ◼ Density
    [Show full text]
  • In-DRAM Cache Management for Low Latency and Low Power 3D-Stacked Drams
    micromachines Article In-DRAM Cache Management for Low Latency and Low Power 3D-Stacked DRAMs Ho Hyun Shin 1,2 and Eui-Young Chung 2,* 1 Samsung Electronics Company, Ltd., Hwasung 18448, Korea; [email protected] 2 School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Korea * Correspondence: [email protected]; Tel.: +82-2-2123-5866 Received: 24 December 2018; Accepted: 5 February 2019; Published: 14 February 2019 Abstract: Recently, 3D-stacked dynamic random access memory (DRAM) has become a promising solution for ultra-high capacity and high-bandwidth memory implementations. However, it also suffers from memory wall problems due to long latency, such as with typical 2D-DRAMs. Although there are various cache management techniques and latency hiding schemes to reduce DRAM access time, in a high-performance system using high-capacity 3D-stacked DRAM, it is ultimately essential to reduce the latency of the DRAM itself. To solve this problem, various asymmetric in-DRAM cache structures have recently been proposed, which are more attractive for high-capacity DRAMs because they can be implemented at a lower cost in 3D-stacked DRAMs. However, most research mainly focuses on the architecture of the in-DRAM cache itself and does not pay much attention to proper management methods. In this paper, we propose two new management algorithms for the in-DRAM caches to achieve a low-latency and low-power 3D-stacked DRAM device. Through the computing system simulation, we demonstrate the improvement of energy delay product up to 67%. Keywords: 3D-stacked; DRAM; in-DRAM cache; low-latency; low-power 1.
    [Show full text]