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(Amlcds) 134, 144, 147 Action Potential 252F j385 Index a – biological computations 275f. activation energies 39, 126 – canonical system 259 active-matrix liquid crystal displays – cellular neural networks (CNN) 266ff. (AMLCDs) 134, 144, 147 – cerebral cortex 275 action potential 252f. – CMOL (Cmos/MOLecular hybrid) 278ff. AFM (atomic force microscopy) 13, 15, 56, – CMOL Nano-Cortex 279f. 170f., 181f. – Connected Network of Adapted Processors – MWNT tip 171 (CNAPs) chip 268ff. – SWNT tip 170f. – contextual analysis techniques 260 ALD (atomic layer deposition) 36 – cortical column analysis 280f. anti-ferroelectric 113f. – cortical networks 276 – ordering 331f. – digital neural network chip 265f. Arrhenius plot 39 – digital signal processing (DSP) 258ff. artificial intelligence 251, 257f. – digital SIMD parallel processing 268ff. – flexibility trade-offs 260ff. b – front-end operations 258ff. back bias effect 24 – Hidden Markov Model (HMM) 260 back-etched 14, 30ff. – instruction level parallelism (ILP) 274 background charge problem 53 – intelligent signal processing (ISP) 259, 263 ballistic transport 34 – latching switch 278 barrier – Markov Model 260 – drain-induced 24 – media chips 258 – electrostatic potential 11f., 19, 37, 111, 332f. – nanogrid 278f. – energy 126 – neuro-inspired silicon 263, 265 – InAsP 37ff. – off-the-shelf 258 – injection 200 – performance overkill 273 – tunneling 19, 191f., 195 – processor node (PN) array 269ff. barrier tunneling – self-organizing structures 274f. – asymmetric 192 – SIMD (Single Instruction, Multiple Data) Bayesian networks 256ff. architecture 267ff. BCB (benzocyclobutane) 32 – SYNAPSE-1 processor 272f. biological-inspired hardware 257ff. – The Broadcast Hierarchy (TBH) 278 – Amdahls law 258, 260ff. biologically inspired models 280 – analog/mixed signal design 267f. block current 38 – analog neural network chip 265f. Bohr magneton 107 – aVLSI (analog Very-Large-Scale-Integration) Boltzmann technology 257, 263ff. – constant 140, 344, 363 – back-end operations 258ff. – statistics 106, 113 Nanotechnology. Volume 4: Information Technology II. Edited by Rainer Waser Copyright Ó 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim ISBN: 978-3-527-31737-0 386j Index Boolean logic 69f., 214, 219, 368 – room-temperature 30, 125ff. – functions 70, 75, 189, 205 – SiGe heterostructures 5f. – operations 69f., 189 – single transport model 126 – variables 197f., 219 – temperature-dependent 126f. Broglie wavelength 49 – uni-axial strain techniques 6 building blocks 53f., 220f., 263ff. – variable-range hopping (VRH) model – aVLSI (analog Very-Large-Scale- 126f. Integration) 263ff. CMOS (Complementary Metal-Oxide- – fault-tolerant full adder 221 Semiconductor) 3ff. – fault-tolerant half adder 223 – active-matrix liquid crystal displays – full adder 220f., 224ff. (AMLCDs) 134, 144 – half adder 220f., 224ff. – circuits 45, 54, 62f., 65, 203 – integrate and fire neuron 264 – CMOL, see biological-inspired hardware – molecular wires 190f. – 3D-DRAM array devices 3, 22ff. – domino-type logic 58 c – double-gate device 12ff. carbon nanofibers (CNFs) 159 – FinFET 13, 16ff. – multi-walled (MWCNFs) – Floating-Gate Flash 3, 20 – PECVD 159f., 169 – gate all-around device 13, 15f. – vertical array 169 – high-k gate dielectrics 4, 7f. carbon nanotubes (CNTs) 51f., 155ff. – inverter 99 – chiral 156 – logic 54, 63f. – CVD (chemical-vapor deposition) 157ff. – metal gate 4, 7f. – device physics 166f. – midgap-like materials 8, 11 – fabrication 163ff. – MOSFETs (Metal-Oxide-Semiconductor – FETs 161ff. Field-Effect Transistor) 3ff. – growth 157ff. – multi-bridge 16 – interconnects 167f. – multi-gate devices 5, 8, 12ff. – memory devices 167ff. – multi-gate flash cell 19ff. – multi-walled (MWNTs) 155ff. – NAND 20f. – nanoelectronics 160ff. – nano-size 3 – nanoporous template 162f. – n-type (NMOS) 6, 9 – nanotube-on-insulator (NOI) 162 – planar double-gate 13, 15 – probes in metrology 170 – poly-silicon gate 8 – properties 155ff. – p-type (PMOS) 5f. – single-electron transistor (SET) 52 – recessed channel array transistor (RCAT) – single-walled (SWNTs) 155ff. 22 – structure 155ff. – silicon-on insulator, see SOI – thermal interface material (TIM) 169 – SONOS SOI FinFET 4 – vertical aligned 163, 168 – tri-gate device 16f., 20 CBE (chemical beam epitaxy) 30f., 37 – ultra-thin silicon-on insulator, see SOI CCD (charge-coupled-device) 115 – wafer-bonded planar double-gate 13ff. channel CMP (chemical mechanical polishing) 13f., – doping 11f., 16, 22 168 – InAs 39f. conduction band 8f., 30 charge carrier mobility – barrier 37 – channel direction 6f. – offset 8 – conjugated polymers 125f., 130, 132f. conjugation, see organic semiconductor – crystal orientation 6f. Coulomb – enhancement 5ff. – coupled quantum dashes 113 – gate-voltage dependent 126f. – diamond 48, 54, 199 – molecular ordering 126f. – interaction 113f., 343, 360 – multiple trapping and release (MTR) – island 46ff. model 126f. – potential 342 Index j387 Coulomb blockade 46, 48f., 53f., 58, 351 – drain contact 95, 97, 99 – oscillation 48, 50f., 53, 62 – layer thickness 100 – state 47f. – materials 69, 72ff. Cranck-Nickolson algorithm 347 – NOT-gate, see magnetic domain wall logic cryptography, see quantum information devices current – source contact 95, 97, 99 – modulation 97 Field-Effect Transistor (FET) 29 – on/off ratio 40, 41f., 65, 97 film – peak-to-valley ratio 63 – amorpous semiconductor 125f., 128 CVD (chemical-vapor deposition) 14, 157ff. – disordered polythienylenevinylene (PTV) – epitaxy 14 127 – plasma-enhanced (PECVD) 134, 157, 172 – iridium thin 170 – TEOS (tetraethyl orthosilicate) – Langmuir-Blodgett 201 – poly(3-hexylthiophene) (P3HT) thin 128ff. d – SAM, see self-assembled monolayer Damascene technique 23 – semicrystalline 126, 131f. Deutsch-Joszca class of problems 120f. – small-molecule polycrystalline 127ff. dielectric layer 7f. – spun-cast 130 dielectrics high-k 8, 30, 37 – vaccum-grown 131f. dissipation fluorescence 222, 224f., 227ff. – energy 93f., 116, 363, 367 Fourier transform operations 214 – power 97, 104, 116, 141 Fowler-Nordheim tunneling currents 7, 20 doping fluctuations 34 frequency 222 drift-and-diffusion mechanism 34 – cut-off 140, 143 – dump pulse of 230 e – Larmor 96 electromigration 167f., 183, 186f. – photons 222, 227, 229 – single-molecule device 186f. – stokes pulse of 230 electron spin, see spin 69, 93 fuzzy logic 257f. electroplating 31 electrostatic potential map 126 g Elliott-Yafet gate – mode 98 – AND-gate 82ff. – spin relaxation mechansim 98 – bottom 13ff. energy-delay-product (EDP) 40, 41 – capacitance 18, 47, 58 energy dispersion relation 97f. – chemical logic 215 entropy 366 – Cr wrap 36f. etching 14, 16, 22 – defined quantum dot 113 – aspect ratio 168 – delay 39, 41f. – wet 31f. – dielectric growth 23 evaporation 131f., 185 – dielectric tunneling 4, 20 – metal 32, 36 – electrochemical 186f. – thermal 131f. – fully silicided NiSi 9 – double- 12f., 16, 29 f – Hadamard 374 FBI (focused ion beam) milling – induced drain current 3 72f., 77, 79ff. – leakage current 3, 7 Fermi-Dirac statistics 113 – length 3f., 10f., 13 Fermi energy 101, 113, 218 – material 9, 14, 16, 19f. Fermi-level 190, 344 – metal 7f., 13ff. – pinning 30 – multi- 12ff. Fermi velocity 99 – nþ poly-silicon gate 8, 10, 13, 15 ferroelectric 114 – NOT-gate 75ff. ferromagnetic 69, 95, 106 – oxidation step 51 388j Index – pþ poly-silicon gate 8f., 13, 15 – leakage 3f. – quantum logic 214, 367f., 374 – nanowire 72 – single Mid-Gap 9 – resistance 62 – top 13ff. – triple- 16, 29 l – voting 335 Lande g-factor 107 – wrap-around 29, 36 Landauer-Shannon limit 94, 116 Greens function 342 Larmor frequency 96 lattice matching 29 h leakage current 22, 38, 97, 99 Hadamard – quantum 62 – gate 374 – trap-assisted tunneling 22 – matrix 374 lithography 50, 136, 158 Hamiltonian 213f., 218 – electron-beam 3, 10, 13, 16, 184 – Hubbard-like, see quantum cellular automata – Extreme Ultra-Violet 25 (QCA) – interferometric 171 Hartree-Fock approximation 347 – top-down 291 Heisenberg uncertainty principle 49 – 22nm 288 heterostructure nanowire transistor 36ff. local density functional approximation – benchmarking 39ff. (LDA) 341 – design 30, 37, 40 logic devices – InAs 29ff. – chemical logic gates 215 – InAsP 37ff. – concatenation 217, 226f., 243 – segments 37 – finite-state machines by electrical – WIGFETs 36ff. adressing 236ff. hot electron injection 20 – finite-state machines by optical hybrid spintronics 93 adressing 217f., 228ff. – spin bipolar junction transistors, see SBJTs – inter-molecular-level 213ff. – spin field effect transistors, see SPINFETs – intra-molecular-level 213ff. – molecular-based computing 214 i – molecular combinational circuits 216, IETS (inelastic electron tunneling 219ff. spectroscopy) 202f. – molecular logic implementation by impact ionization processes 33, 37 photophysics 219, 221f., 224ff. International Technology Roadmap for – multi-valued logic 219 Semiconductors (ITRS) 3f., 7, 62, 167, – quantum cellular automata, see QCA 175 – quantum computing 213f., 363ff. information theory 366ff. – quasiclassical computing 214 ionization – set-reset machine 237ff. – intensity 222 – Stimulated Raman Adiabatic Passage – two-photon 223 (STIRAP) pump-probe control scheme – potential 129 229ff. island long channel transistors 30f., 33ff. – capacitance 62 – InAs nanowire transistor 34 – Coulomb 46ff. – MISFET model 34f. – metal 49 – planar Metal-Insulator-Semiconductor Field- – semiconductor 49 Effect Transistor (MISFET) 33 – SET 55, 57 low-operating-power (LOP) 69 – size 49f., 61f. – applications 62 – style designs 311 –
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