Electronics/Computer Repair Areas of Study

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Electronics/Computer Repair Areas of Study Fundamentals of Electronics Digital Electronics Basic Circuitry Microprocessor Inductance and Capacitance Measuring and Diagnostic Equipment Ohms Law Computer Fundamentals Power Supplies DC & AC Fundamentals Semiconductor Fundamentals Resistors Transistors and Diodes Electronic Troubleshooting & Repair Amplifiers Integrated Circuits Power Supplies ASCII & BAUD Rate Codes Binary & Hexadecimal Numbering Systems Prerequisites: If you apply for Computer Network Engineering, you should: • Like activities involving machines, processes, and methods • Enjoy sitting for extended periods of time • Like working with electronics, computerized, various technical equipment • Have good eyesight and color perception • Above-average math skills - must successfully complete Algebra I, Algebra II, and Geometry, if college bound • Comprehend textbook written at 12th grade reading level You should possess: • The ability to work cooperatively with others; as well as independently • Good mechanical reasoning • The ability to perceive details in graphic material • Good science skills - Physical Science, Principles of Technology or Physics is recommended Future Jobs/Career Paths Medical Electronics Technician * Communications Technician* Electronics Design Engineer* Consumer Products Repair Technician Industrial Electronics Technician * Computer Repair Technician Computer Maintenance Tech Computer Assembly Technician Automotive Electronics Technician * Consumer Electronics Tech Electronics Assembler Avionic Electronics Technician * *Requires further education Certifications and Completions: CompTia's A+ , Dell Computer Specialist, Certified Electronic Technician, NOCTI Skills Certificate Required Unform & Equipment: Students are required to purchase three to five accepted uniform shirts through the approved school vendor Average Earnings: Starting - $8 - $10/hour up to $23/hour and beyond Related Post-Secondary Opportunities: Trade extension program, two or four year Degree in Electronics 72.

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MOSFET Operation Lecture Outline
97.398*, Physical Electronics, Lecture 21 MOSFET Operation Lecture Outline • Last lecture examined the MOSFET structure and required processing steps • Now move on to basic MOSFET operation, some of which may be familiar • First consider drift, the movement of carriers due to an electric field – this is the basic conduction mechanism in the MOSFET • Then review basic regions of operation and charge mechanisms in MOSFET operation 97.398*, Physical Electronics: David J. Walkey Page 2 MOSFET Operation (21) Drift • The movement of charged particles under the influence of an electric field is termed drift • The current density due to conduction by drift can be written in terms of the electron and hole velocities vn and vp (cm/sec) as =+ J qnvnp qpv • This relationship is general in that it merely accounts for particles passing a certain point with a given velocity 97.398*, Physical Electronics: David J. Walkey Page 3 MOSFET Operation (21) Mobility and Velocity Saturation • At low values of electric field E, the carrier velocity is proportional to E -the proportionality constant is the mobility µ • At low fields, the current density can therefore be written Jqn= µ qpµ !nE+!p E v n v p • At high E, scattering limits the velocity to a maximum value and the relationship above no longer holds - this is termed velocity saturation 97.398*, Physical Electronics: David J. Walkey Page 4 MOSFET Operation (21) Factors Influencing Mobility • The value of mobility (velocity per unit electric field) is influenced by several factors – The mechanisms of conduction through the valence and conduction bands are different, and so the mobilities associated with electrons and holes are different.
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Fundamentals of MOSFET and IGBT Gate Driver Circuits
Application Report SLUA618A–March 2017–Revised October 2018 Fundamentals of MOSFET and IGBT Gate Driver Circuits Laszlo Balogh ABSTRACT The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special section deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications. For more information, see the Overview for MOSFET and IGBT Gate Drivers product page. Several, step-by-step numerical design examples complement the application report. This document is also available in Chinese: MOSFET 和 IGBT 栅极驱动器电路的基本原理 Contents 1 Introduction ................................................................................................................... 2 2 MOSFET Technology ......................................................................................................
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The Transistor
Chapter 1 The Transistor The searchfor solid-stateamplification led to the inventionof the transistor. It was immediatelyrecognized that majorefforts would be neededto understand transistorphenomena and to bring a developedsemiconductor technology to the marketplace.There followed a periodof intenseresearch and development, duringwhich manyproblems of devicedesign and fabrication, impurity control, reliability,cost, and manufacturabilitywere solved.An electronicsrevolution resulted,ushering in the eraof transistorradios and economicdigital computers, alongwith telecommunicationssystems that hadgreatly improved performance and that were lower in cost. The revolutioncaused by the transistoralso laid the foundationfor the next stage of electronicstechnology-that of silicon integratedcircuits, which promised to makeavailable to a massmarket infinitely more complexmemory and logicfunctions that could be organizedwith the aid of softwareinto powerfulcommunications systems. I. INVENTION OF THE TRANSISTOR 1.1 Research Leading to the Invention As World War II was drawing to an end, the research management of Bell Laboratories, led by then Vice President M. J. Kelly (later president of Bell Laboratories), was formulating plans for organizing its postwar basic research activities. Solid-state physics, physical electronics, and mi crowave high-frequency physics were especially to be emphasized. Within the solid-state domain, the decision was made to commit major research talent to semiconductors. The purpose of this research activity, according
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How to Select a Capacitor for Power Supplies
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Power MOSFET Basics by Vrej Barkhordarian, International Rectifier, El Segundo, Ca
Power MOSFET Basics By Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Breakdown Voltage......................................... 5 On-resistance.................................................. 6 Transconductance............................................ 6 Threshold Voltage........................................... 7 Diode Forward Voltage.................................. 7 Power Dissipation........................................... 7 Dynamic Characteristics................................ 8 Gate Charge.................................................... 10 dV/dt Capability............................................... 11 www.irf.com Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs Source Field Gate Gate Drain employ semiconductor Contact Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current n* Drain levels are significantly different n* Source t from the design used in VLSI ox devices. The metal oxide semiconductor field effect p-Substrate transistor (MOSFET) is based on the original field-effect Channel l transistor introduced in the 70s. Figure 1 shows the device schematic, transfer (a) characteristics and device symbol for a MOSFET. The ID invention of the power MOSFET was partly driven by the limitations of bipolar power junction transistors (BJTs) which, until recently, was the device of choice in power electronics applications. 0 0 V V Although it is not possible to T GS define absolutely the operating (b) boundaries of a power device, we will loosely refer to the I power device as any device D that can switch at least 1A. D The bipolar power transistor is a current controlled device. A SB (Channel or Substrate) large base drive current as G high as one-fifth of the collector current is required to S keep the device in the ON (c) state. Figure 1. Power MOSFET (a) Schematic, (b) Transfer Characteristics, (c) Also, higher reverse base drive Device Symbol.
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Electronics and Computer Technology
Electronics and Computer Technology The Electronics and Computer Technology Department offers several concentrations in electronics and computer technology that are designed to prepare students for a variety of high-tech job/career opportunities in the fields of engineering and technology; electronics technology; computer technology; telecommunication technology; and related technologies. The Electronics and Computer Technology Department offers an associate degree program in engineering technology with an emphasis in electronics, computers, and telecommunications. Technology certificates offered in areas of specialization include: electronics technology, computer technology, telecommunication technology, networking technology, electronic communication technology, and industrial electronics technology. Certificates/certifications offered in specific areas of electronics, computers, and related technology include: Certified Electronics Technician (Associate CET), A+ Certified Computer Service Technician, N+ Certified Networking Technician, CISCO Certified Network Associate (CCNA), CISCO Certified Network Professional (CCNP), Microsoft Certified Systems Engineer (MCSE), Certified Fiber Optics Installer, (FOIC), Electronics Communications (WCM, FCC license) and Digital and Microprocessor Electronics. Career Opportunities Electronics Engineering Technologist, Computer Engineering Technologist, Network Engineering Technologist, Telecommunications Engineering Technologist, Certified Electronics Technician - CET, A+ Certified Computer Technician,
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SI Series Snap-In Elctrolytic Capacitors | NTE Electronics, Inc
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Compact Mosfets for Consumer Electronics Analog Power Has Proven Itself As a World-Class MOSFET Mosfets Are Used Throughout Consumer Electronics
Small Footprint Energy-saving Power MOSFETs Analog Power specializes in cost-effective power management solutions using low RDS(on) silicon technology in both leading-edge and industry-standard packages. With N- and P-Channel MOSFETs, 20-V through 800-V, manufactured in world-class wafer fabs and assembly facilities, and packages from the industry-leading DFN- 1.6x1.6 through the TO-247, we provide solutions for a wide range of applications. Now in its 15 th year of business, Compact MOSFETs for Consumer Electronics Analog Power has proven itself as a world-class MOSFET MOSFETs are used throughout consumer electronics. Applications include reverse supplier, and is a qualified vendor battery protection, switching power from different sources such as an AC adapter at many major electronics and batteries, and turning off loads such as backlighting when they are not needed. companies worldwide. Analog Power produces powerful compact MOSFETs ideal for these applications. Key Features: • Small Footprint, high current • N and P Channel MOSFETs with RDS ratings down to 1.8V Gate to Source • Dual MOSFETs in one package reduce PC Board area even further • Integrated ESD protection available Part VDS RDS ID Package, Type AMB420N 20 V 30 m Ohm 6.9 A DFN1.6x1.6 Single P MOSFET AMA921P -20 V 79 m Ohm 4.5 A DFN2x2 Dual P MOSFET (2mm 2 per FET) AM2307PE -20 V 31 m Ohm 5.2 A SOT-23 P MOSFET with ESD Protection AM3940N 40 V 58 m Ohm 3.5 A TSOP-6 Dual N MOSFET Low Voltage LED Lighting and Display Backlighting LED lighting is approximately 5X the efficiency of incandescent lighting.
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Electronic Technician Personnel and Training Needs of Iowa Industries Gary Dean Weede Iowa State University
Iowa State University Capstones, Theses and Retrospective Theses and Dissertations Dissertations 1967 Electronic technician personnel and training needs of Iowa industries Gary Dean Weede Iowa State University Follow this and additional works at: https://lib.dr.iastate.edu/rtd Part of the Education Commons Recommended Citation Weede, Gary Dean, "Electronic technician personnel and training needs of Iowa industries " (1967). Retrospective Theses and Dissertations. 3440. https://lib.dr.iastate.edu/rtd/3440 This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University Digital Repository. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of Iowa State University Digital Repository. For more information, please contact [email protected]. This dissertation has been microiihned exactly as received 68—2872 WEEDE, Gary Dean, 1938- ELECTRONIC TECHNICIAN PERSONNEL AND TBAINING NEEDS OF IOWA INDUSTRIES. Iowa State University, Ph.D., 1967 Education, general University Microfilms, Inc., Ann Arbor, Michigan ELECTRONIC TECHNICIAN PERSONNEL Al® TRAINING NEEDS OF IOWA INDUSTRIES ty Gary Dean Weede A Dissertation Submitted to the Graduate Faculty in Partial Fulfillment of The Requirements for the Degree of DOCTOR OF PHILOSOPHY Major Subject: Education Approved: Signature was redacted for privacy. Charg of Ma,jo Work Signature was redacted for privacy. Head of mj Dep rtment Signature was redacted for privacy. Iowa State University Of Science and Technology Ames, Iowa 1967 ii TABLE OF CONTENTS Page INTRODUCTION 1 Educational Consideration 1 REVIEW OF LITERATURE 11 METHOD OF PROCEDURE 22 Introduction 22 Funding 22 Procedure 22 FINDINGS 27 General Findings 27 DISCUSSION 88 SUMMARY AND CONCLUSION 95 LITERATURE CITED 100 APPENDIX 103 Ill LIST OF ILLUSTRATIONS Page Figure 1.
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Capacitor and Inductors
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