Silicon-Based Sensors for Biomedical Applications: a Review
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Discrete Cosine Transform Based Image Fusion Techniques VPS Naidu MSDF Lab, FMCD, National Aerospace Laboratories, Bangalore, INDIA E.Mail: [email protected]
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by NAL-IR Journal of Communication, Navigation and Signal Processing (January 2012) Vol. 1, No. 1, pp. 35-45 Discrete Cosine Transform based Image Fusion Techniques VPS Naidu MSDF Lab, FMCD, National Aerospace Laboratories, Bangalore, INDIA E.mail: [email protected] Abstract: Six different types of image fusion algorithms based on 1 discrete cosine transform (DCT) were developed and their , k 1 0 performance was evaluated. Fusion performance is not good while N Where (k ) 1 and using the algorithms with block size less than 8x8 and also the block 1 2 size equivalent to the image size itself. DCTe and DCTmx based , 1 k 1 N 1 1 image fusion algorithms performed well. These algorithms are very N 1 simple and might be suitable for real time applications. 1 , k 0 Keywords: DCT, Contrast measure, Image fusion 2 N 2 (k 1 ) I. INTRODUCTION 2 , 1 k 2 N 2 1 Off late, different image fusion algorithms have been developed N 2 to merge the multiple images into a single image that contain all useful information. Pixel averaging of the source images k 1 & k 2 discrete frequency variables (n1 , n 2 ) pixel index (the images to be fused) is the simplest image fusion technique and it often produces undesirable side effects in the fused image Similarly, the 2D inverse discrete cosine transform is defined including reduced contrast. To overcome this side effects many as: researchers have developed multi resolution [1-3], multi scale [4,5] and statistical signal processing [6,7] based image fusion x(n1 , n 2 ) (k 1 ) (k 2 ) N 1 N 1 techniques. -
An Apparatus for Measuring the Piezoresistivity of Semiconductors
- - --------------------- --- ~----------...., Journal of Research of the National Bureau of Standards Vol. 59 No.6, December 1957 Research Paper 2814 An Apparatus for Measuring the Piezoresistivity of Semiconductors 1 R. F. Potter 2 and W. 1. Me Kean A detailed description is given of an apparatus and procedure designed to measure t he piezoresistive effect in semiconductors over an extended temperature range. A tensile force up to 1 kilogram can be appli ed to the sample by means of a calibrated beam balance. The apparatus has been used for measurements on indium antimonide over the range 780 K to 3000 K , and tensile stresses of the order of 5 X 107 dynes per square centimeter can be applied t o samples that are cut in a special manner. In modern solid-state physics, phenomena such as a form quite analogous to that for the elastic con electrical conduction, Han effect, and optical absorp stants. The II-constants are defined as follows: tion have been studied extensively because of their direct connection with a well-developed theory of IIn = IIll, II semiconductors. More recently several other effects have been receiving an increasing amount of attention (2) by both the theorist and experimentalist; some of these are cyclotron resonance, photoelectromagnetic effect, magnetoresistivity, and piezoresistivity. The latter parameter has been studied for some X ij is the applied stress, and P is the resistivity, time in connection with m etals, but it is only in where the cubic axes are taken as the reference axes. comparatively recent years that large anisotropic The change of resistance in a material is measured changes in the resistivity with applied stress were when a stress is applied in a given direction to a measUTed for single crystals with cubic symmetry. -
Sensitivity of Wetland Methane Emissions to Model Assumptions: Application and Model Testing Against Site Observations
Biogeosciences, 9, 2793–2819, 2012 www.biogeosciences.net/9/2793/2012/ Biogeosciences doi:10.5194/bg-9-2793-2012 © Author(s) 2012. CC Attribution 3.0 License. Sensitivity of wetland methane emissions to model assumptions: application and model testing against site observations L. Meng1, P. G. M. Hess2, N. M. Mahowald3, J. B. Yavitt4, W. J. Riley5, Z. M. Subin5, D. M. Lawrence6, S. C. Swenson6, J. Jauhiainen7, and D. R. Fuka2 1Department of Geography and Environmental Studies Program, Western Michigan University, Kalamazoo, MI 49008, USA 2Department of Biological and Environmental Engineering, Cornell University, Ithaca, NY 14850, USA 3Department of Earth and Atmospheric Sciences, Cornell University, Ithaca, NY 14850, USA 4Department of Natural Resources, Cornell University, Ithaca, NY 14850, USA 5Earth Sciences Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720, USA 6NCAR-CGD, P.O. Box 3000, Boulder, CO 80307, USA 7Department of Forest Sciences, P.O. Box 27, University of Helsinki, Helsinki 00014, Finland Correspondence to: L. Meng ([email protected]) Received: 14 June 2011 – Published in Biogeosciences Discuss.: 30 June 2011 Revised: 13 June 2012 – Accepted: 29 June 2012 – Published: 30 July 2012 −1 Abstract. Methane emissions from natural wetlands and wetlands contributed 201 Tg CH4 yr , or 78 % of the global rice paddies constitute a large proportion of atmospheric wetland flux. Northern latitude (>50 N) systems contributed −1 methane, but the magnitude and year-to-year variation of 12 Tg CH4 yr . However, sensitivity studies show a large −1 these methane sources are still unpredictable. Here we de- range (150–346 Tg CH4 yr ) in predicted global methane scribe and evaluate the integration of a methane biogeochem- emissions (excluding emissions from rice paddies). -
Advances in Piezoresistive Probes for Atomic Force
ADVANCES IN PIEZORESISTIVE PROBES FOR ATOMIC FORCE MICROSCOPY A DISSERTATION SUBMITTED TO THE DEPARTMENT OF MECHANICAL ENGINEERING AND THE COMMITTEE ON GRADUATE STUDIES OF STANFORD UNIVERSITY IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY Jonah A. Harley March 2000 ii Ó Copyright by Jonah A. Harley 2000 All Rights Reserved iii I certify that I have read this dissertation and that in my opinion it is fully adequate, in scope and quality, as dissertation for the degree of Doctor of Philosophy. __________________________________ Thomas W. Kenny (Principal Advisor) I certify that I have read this dissertation and that in my opinion it is fully adequate, in scope and quality, as dissertation for the degree of Doctor of Philosophy. __________________________________ Storrs T. Hoen I certify that I have read this dissertation and that in my opinion it is fully adequate, in scope and quality, as dissertation for the degree of Doctor of Philosophy. __________________________________ Calvin F. Quate Approved for the University Committee on Graduate Studies __________________________________ iv Abstract The atomic force microscope (AFM) is a tool that enables the measurement of precisely localized forces with unprecedented resolution in time, space and force. At the heart of this instrument is a cantilever probe that sets the fundamental limitations of the AFM. Piezoresistive cantilevers provide a simple and convenient alternative to optically detected cantilevers, and have made it easier for commercial applications to exploit the power of the force microscope. Unfortunately, piezoresistive cantilevers do not provide performance levels equal to those of the optically detected AFM. Several advances will be discussed in this work that largely erase that discrepancy, and in some cases take the capabilities of the piezoresistive cantilever beyond those of the standard AFM cantilever. -
Modeling Piezoresistivity in Silicon and Polysilicon
November 19, 2005 10:41 Journal of Applied Engineering Mathematics Volume 2 MODELING PIEZORESISTIVITY IN SILICON AND POLYSILICON Gary K. Johns Mechanical Engineering Department Brigham Young University Provo,Utah 84602 ABSTRACT INTRODUCTION The piezoresistive effect of silicon is often utilized in sen- Piezoresistivity is a material property that couples bulk elec- sors. Due to the crystalline nature of silicon, the sensitivity of trical resistivity to mechanical strain [1]. In other words, as a ma- the piezoresistive effect depends on many things including the terial is stretched, compressed, or distorted in any way, the elec- direction and magnitude of the applied stress and the orientation trical resistivity changes. Almost all materials have this property, of the crystallographic plane. A method of modeling the piezore- even though in some it is so small that it is virtually undetectable. sistive effect in silicon and poly crystalline silicon is presented. However, other materials show a large change in resistivity for a This mathematical model includes partial derivatives and linear relatively small strain. One of these materials is silicon. The algebra to combine basic electrical and mechanical equations to piezoresistive effect in silicon makes it a good candidate to use describe the change in resistivity as a function of stress. An ex- as a sensor. A sensor element is a device that converts one form periment was used to verify the model. The analytical solution of energy into another [2]. An element made from silicon can and experimental results agree. The model presented in this pa- be designed to be a sensor since the piezoresistive property links per is adequate to predict the behavior of a piezoresistive sensor strain energy to change in resistance (electrical energy). -
Temperature Compensation Circuit for ISFET Sensor
Journal of Low Power Electronics and Applications Article Temperature Compensation Circuit for ISFET Sensor Ahmed Gaddour 1,2,* , Wael Dghais 2,3, Belgacem Hamdi 2,3 and Mounir Ben Ali 3,4 1 National Engineering School of Monastir (ENIM), University of Monastir, Monastir 5000, Tunisia 2 Electronics and Microelectronics Laboratory, LR99ES30, Faculty of Sciences of Monastir, University of Monastir, Monastir 5000, Tunisia; [email protected] (W.D.); [email protected] (B.H.) 3 Higher Institute of Applied Sciences and Technology of Sousse (ISSATSo), University of Sousse, Sousse 4003, Tunisia; [email protected] 4 Nanomaterials, Microsystems for Health, Environment and Energy Laboratory, LR16CRMN01, Centre for Research on Microelectronics and Nanotechnology, Sousse 4034, Tunisia * Correspondence: [email protected]; Tel.: +216-50998008 Received: 3 November 2019; Accepted: 21 December 2019; Published: 4 January 2020 Abstract: PH measurements are widely used in agriculture, biomedical engineering, the food industry, environmental studies, etc. Several healthcare and biomedical research studies have reported that all aqueous samples have their pH tested at some point in their lifecycle for evaluation of the diagnosis of diseases or susceptibility, wound healing, cellular internalization, etc. The ion-sensitive field effect transistor (ISFET) is capable of pH measurements. Such use of the ISFET has become popular, as it allows sensing, preprocessing, and computational circuitry to be encapsulated on a single chip, enabling miniaturization and portability. However, the extracted data from the sensor have been affected by the variation of the temperature. This paper presents a new integrated circuit that can enhance the immunity of ion-sensitive field effect transistors (ISFET) against the temperature. -
The Piezojunction Effect in Silicon, Its Consequences and Applications for Integrated Circuits and Sensors
The Piezojunction Effect in Silicon, its Consequences and Applications for Integrated Circuits and Sensors The Piezojunction Effect in Silicon, its Consequences and Applications for Integrated Circuits and Sensors PROEFSCHRIFT ter verkrijging van de graad van doctor aan de Technische Universiteit Delft, op gezag van de Rector Magnificus prof. Ir. K. F. Wakker, voorzitter van het College voor Promoties, in het openbaar te verdedigen op maandag 24 september 2001 om 10:30 uur door Fabiano FRUETT master in electric engineering, UNICAMP, Brazil geboren te São Caetano do Sul, Brazil Dit proefschrift is goedgekeurd door de promotor: Prof. dr. ir. A.H.M. van Roermund Togevoegd promotor: Dr. ir. G.C.M. Meijer Samenstelling promotiecommissie: Rector Magnificus, Technische Universiteit Delft, voorzitter Prof. dr. ir. A.H.M. van Roermund,Technische Universiteit Delft, promotor Dr. ir. G.C.M. Meijer, Technische Universiteit Delft, toegevoegd promotor Prof. dr ir. R. Puers, Katholieke Universiteit Leuven, Belgium Prof. ir. A.J.M. van Tuijl, Philips Research Laboratories, Eindhoven Dr. C.A. dos Reis Filho, Univesridade Estadual de Campinas, Brazil Prof. dr. ir. J.W. Slotboom, Technische Universiteit Delft Prof. dr. ir. J.H. Huijsing, Technische Universiteit Delft Published and distributed by: DUP Science DUP Science is an imprint of Delft University Press P.O. Box 98 2600 MG Delft The Netherlands Phone: +31 15 27 85 678 Fax: +31 15 27 85 706 E-mail: [email protected] ISBN 90-407-2226-9 Keywords: piezojunction effect, analogue integrated circuit and mechanical-stress sensor. Copyright 2001 by Fabiano Fruett All rights reserved. No part of the material protected by this copyright notice may be reproduced or utilized in any form or by means, electronic or mechanical, including photocopying, recording, or by any information storage and retrieval system, without written permission from the publisher: Delft University Press. -
Characteristic and Analysis of Silicon Germanium Material As MEMS Pressure Sensor
Available online www.jocpr.com Journal of Chemical and Pharmaceutical Research, 2015, 7(1):411-415 ISSN : 0975-7384 Research Article CODEN(USA) : JCPRC5 Characteristic and analysis of silicon germanium material as MEMS pressure sensor S. Maflin Shaby Dept of Electronics and Telecommunication Engineering, Sathyabama University, Chennai, India _____________________________________________________________________________________________ ABSTRACT The silicon based pressure sensor is one of the major applications of the piezoresistive sensor. This paper focuses on the structural design and optimization of the MEMS piezoresistive pressure sensor to enhance the sensitivity. A finite element method (FEM) is adopted for designing the performance of a silicon based piezoresistive pressure sensor. Thermal as well as pressure loading on the sensor is applied to make a simulation results. In order to achieve better sensor performance, a parametric analysis is performed to evaluate the system output sensitivity of the pressure sensor. The design parameters of the pressure sensor include the location of piezoresistors and the new structural material used for designing of the piezoresistors in the membrane is poly-Silicon Germanium in which germanium is about 60%. The findings depict that proper selection of the piezoresistors location and the new structural material of the piezoresistors in the membrane can enhance the sensor sensitivity. Keywords: Piezoresistors, sensor, parametric analysis, silicon germanium, piezoresistivity, sensitivity _____________________________________________________________________________________________ INTRODUCTION The silicon based pressure sensor is one of the major applications of the piezoresistive sensor. Nowadays, silicon piezoresistive pressure sensor is a matured technology in industry and its measurement accuracy is more rigorous in many advanced applications. The fundamental concept of piezoresistive effect is the change in receptivity of a material resulting from an applied stress. -
A Novel MEMS Pressure Sensor with MOSFET on Chip
A Novel MEMS Pressure Sensor with MOSFET on Chip Zhao-Hua Zhang *, Yan-Hong Zhang, Li-Tian Liu, Tian-Ling Ren Tsinghua National Laboratory for Information Science and Technology Institute of Microelectronics, Tsinghua University Beijing 100084, China [email protected] Abstract—A novel MOSFET pressure sensor was proposed Figure 1. Two PMOSFET’s and two piezoresistors are based on the MOSFET stress sensitive phenomenon, in which connected to form a Wheatstone bridge. To obtain the the source-drain current changes with the stress in channel maximum sensitivity, these components are placed near the region. Two MOSFET’s and two piezoresistors were employed four sides of the silicon diaphragm, which are the high stress to form a Wheatstone bridge served as sensitive unit in the regions. The MOSFET’s has the same structure parameter novel sensor. Compared with the traditional piezoresistive W/L, same threshold voltage VT and gate-source voltage VGS pressure sensor, this MOSFET sensor’s sensitivity is improved (equal to VG-Vdd). They are designed to work in the significantly, meanwhile the power consumption can be saturation region. The piezoresistors also have the same decreased. The fabrication of the novel pressure sensor is low- resistance R . cost and compatible with standard IC process. It shows the 0 great promising application of MOSFET-bridge-circuit structure for the high performance pressure sensor. This kind of MEMS pressure sensor with signal process circuit on the same chip can be used in positive or negative Tire Pressure Monitoring System (TPMS) which is very hot in automotive electron research field. I. -
Simplifying Current Sensing (Rev. A)
Simplifying Current Sensing How to design with current sense amplifiers Table of contents Introduction . 3 Chapter 4: Integrating the current-sensing signal chain Chapter 1: Current-sensing overview Integrating the current-sensing signal path . 40 Integrating the current-sense resistor . 42 How integrated-resistor current sensors simplify Integrated, current-sensing PCB designs . 4 analog-to-digital converter . 45 Shunt-based current-sensing solutions for BMS Enabling Precision Current Sensing Designs with applications in HEVs and EVs . 6 Non-Ratiometric Magnetic Current Sensors . 48 Common uses for multichannel current monitoring . 9 Power and energy monitoring with digital Chapter 5: Wide VIN and isolated current sensors . 11 current measurement 12-V Battery Monitoring in an Automotive Module . 14 Simplifying voltage and current measurements in Interfacing a differential-output (isolated) amplifier battery test equipment . 17 to a single-ended-input ADC . 50 Extending beyond the maximum common-mode range of discrete current-sense amplifiers . 52 Chapter 2: Out-of-range current measurements Low-Drift, Precision, In-Line Isolated Magnetic Motor Current Measurements . 55 Measuring current to detect out-of-range conditions . 20 Monitoring current for multiple out-of-range Authors: conditions . 22 Scott Hill, Dennis Hudgins, Arjun Prakash, Greg Hupp, High-side motor current monitoring for overcurrent protection . 25 Scott Vestal, Alex Smith, Leaphar Castro, Kevin Zhang, Maka Luo, Raphael Puzio, Kurt Eckles, Guang Zhou, Chapter 3: Current sensing in Stephen Loveless, Peter Iliya switching systems Low-drift, precision, in-line motor current measurements with enhanced PWM rejection . 28 High-side drive, high-side solenoid monitor with PWM rejection . 30 Current-mode control in switching power supplies . -
Integrated Switch Current Sensor for Shortcircuit Protection and Current Control of 1.7-Kv Sic MOSFET Modules
Integrated Switch Current Sensor for Shortcircuit Protection and Current Control of 1.7-kV SiC MOSFET Modules Jun Wang, Zhiyu Shen, Rolando Burgos, Dushan Boroyevich Center for Power Electronics Systems Virginia Polytechnic Institute and State Blacksburg, VA 24061, USA [email protected] Abstract—This paper presents design and implementations of a switch current sensor based on Rogowski coils. The current sensor is designed to address the issue of using desaturation circuit to protect the SiC MOSFET during shortcircuit. Specifications are given to meet the application requirement for SiC MOSFETs. It is also designed for high accuracy and high bandwidth for converter current control. PCB-based winding and shielding layout is proposed to minimize the noises caused by the high dv/dt at switching. The coil on PCB are modeled by impedance measurement, thus the bandwidth of coil is calculated. At the end, various test results are demonstrated to validate the great performance of the switch current sensor. Fig. 1. Output characteristics comparison: Si IGBT vs. SiC MOSFET Keywords—current sensing; Rogowski; SiC MOSFET; shortcircuit; current control I. INTRODUCTION SiC MOSFET, as a wide-bandgap device, has superior performance for its high breakdown electric field, low on-state resistance, fast switching speed and high working temperature [1]. High switching speed enables high switching frequency, which improves the power density of high power converters. The gradual cost reduction and packaging advancement bring a Fig. 2. Principle shortcircuit current comparison: Si IGBT vs. SiC MOSFET promising trend of replacing the conventional Si IGBTs with SiC MOSFET modules in high power applications. quickly and reaches its saturation value, where the VCE hits the Shortcircuit protection is one of the major challenges protection threshold value (“Fault detection” in the Fig.1). -
Electromechanical Piezoresistive Sensing in Suspended Graphene
This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright © American Chemical Society after peer review. To access the final edited and published work see http://pubs.acs.org/articlesonrequest/AOR-kGn5XaTPGiC7mYUQfih3. Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes A.D. Smith1, F. Niklaus1, A. Paussa2, S. Vaziri1, A.C. Fischer1, M. Sterner1, F. Forsberg1, A. Delin1, D. Esseni2, P. Palestri2, M. Östling1, M.C. Lemme1,3,* 1 KTH Royal Institute of Technology, Isafjordsgatan 22, 16440 Kista, Sweden, 2 DIEGM, University of Udine, Via delle Scienze 206, 33100 Udine, Italy 3University of Siegen, Hölderlinstr. 3, 57076 Siegen, Germany * Corresponding author: [email protected] Abstract Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical (NEMS) devices. Here, we conclusively demonstrate the piezoresistive effect in graphene in a nano- electromechanical membrane configuration that provides direct electrical readout of pressure to strain transduction. This makes it highly relevant for an important class of nano-electromechanical system (NEMS) transducers. This demonstration is consistent with our simulations and previously reported gauge factors and simulation values. The membrane in our experiment acts as a strain gauge independent of crystallographic orientation and allows for aggressive size scalability. When compared with conventional pressure sensors, the sensors have orders of magnitude higher sensitivity per unit area. Keywords: graphene, pressure sensor, piezoresistive effect, nanoelectromechanical systems (NEMS), MEMS 2 Graphene is an interesting material for nanoelectromechanical systems (NEMS) due to its extraordinary thinness (one atom thick), high carrier mobility 1,2, a high Young’s modulus of about 1 TPa for both pristine (exfoliated) and chemical vapor deposited (CVD) graphene.3,4 Graphene is further stretchable up to approximately 5 6 20%.