JANUARY 2012 VOL. 19, NO. 1 ISSN: 1074 1879 EDITOR-IN-CHIEF: NINOSLAV D. STOJADINOVIC

tablE of ContEntS 2012 IEEE IntErnatIonal Spotlight On: EDS’s Inaugural Webinar with Chenming Hu ...... 1 mEmorY WorkShoP (ImW)

Upcoming Technical Meetings ...... 3

Society News ...... 9

Regional and Chapter News ...... 25

EDS Meetings Calendar ...... 33

EDS’S Inaugural WEbInar WIth ChEnmIng hu Milan cathedral (Duomo di Milano) The Electron Devices Soci- ety has always had a strong commitment to providing out- The fourth IEEE International Memory Workshop will be held at standing educational oppor- the Melia Hotel in Milan, Italy, May 20–23, 2012. tunities to both our members In response to the growing global interest in memory technolo- and the profession at large. In gies, in 2008 the NVSMW – Non Volatile Memory addition to our robust confer- Workshop – and ICMTD – International Conference on Memory ence portfolio, we offer over Technology and Design – were merged together to incorporate Chenming Hu 100 lectures annually through the volatile and non-volatile memory aspects in one forum while IEEE Fellow our Distinguished Lecturer maintaining the workshop experience started in 1976 with the first and Mini-Colloquia programs. edition of the NVSMW. The workshop is sponsored by the IEEE Overseeing EDS’s education outreach is an exciting Electron Devices Society and meets annually in May. While in 2008 and enriching part of my job as VP of Education. the combined 23rd NVSMW & 3rd ICMTD conference was held in As part of our commitment to continually expand Europe, the previous three IMW editions were located in California our educational offerings, it was decided, at our mid- and in Korea. In 2012, IMW plans to go back to Europe and it will year ExCom Meeting in , that EDS should im- be held in Milan, Italy. mediately begin offering webinars for our members The convergence of consumer, computer and communication around the globe. We saw this as the next logical electronic systems is leading to an exponential growth in need, step in our ongoing commitment to keep members mainly for code, computing and data storage. While in the past on the leading edge of technology innovation and to enhance the value of membership in EDS. (continued on page 3)

(continued on page 8) Your CommEntS SolICItED Your comments are most welcome. Please write directly to the Editor-in-Chief of the Newsletter at [email protected] ELECTRON DEVICES NEWSLETTER SOCIETY EDITORIAL STAFF

President Vice‑President of Conferences Editor‑In‑Chief Renuka P. Jindal Bin Zhao Ninoslav D. Stojadinovic University of Louisiana at Lafayette Freescale Semiconductor University of Nis E-mail: [email protected] E-mail: [email protected] E-mail: [email protected]

President‑Elect Vice‑President of Membership Paul K.L. Yu Albert Z.H. Wang REGIONS 1-6, 7 & 9 Scandinavia & Central Europe Univ. of California at San Diego University of California, Riverside Eastern, Northeastern & South‑ Zygmunt Ciota E-mail: [email protected] E-mail: [email protected] eastern USA (Regions 1, 2 & 3) Technical University of Lodz Fernando Guarin E-mail: [email protected] Treasurer Vice‑President of Publications IBM Microelectronics Stephen A. Parke Samar K. Saha E-mail: [email protected] UK, Middle East & Africa Northwest Nazarene University Univ. of Colorado at Colorado Springs Zhirun Hu E-mail: [email protected] E-mail: [email protected] Central USA & Canada University of Manchester (Regions 4 & 7) E-mail: [email protected] Secretary Vice‑President Peyman Servati James L. Merz of Regions/Chapters University of British Columbia Western Europe University of Notre Dame Juin J. Liou E-mail: [email protected] Jan Vobecky E-mail: [email protected] University of Central Florida Abb Switzerland Ltd. E-mail: [email protected] Southwestern & Western USA E-mail: [email protected] Jr. Past President (Regions 5 & 6) Cor L. Claeys Vice‑President Adam M. Conway IMEC of Technical Activities REGION 10 Lawrence Livermore Nat. Lab. E-mail: [email protected] Joachim N. Burghartz Australia, New Zealand E-mail: [email protected] IMS Chips & South Asia Sr. Past President E-mail: [email protected] M.K. Radhakrishnan Latin America (Region 9) Ilesanmi Adesida NanoRel Francisco J. Garcia Sanchez University of Illinois IEEE Newsletters E-mail: [email protected] University Simon Bolivar E-mail: [email protected] Theresa Smith E-mail: [email protected] IEEE Operations Center Northeast Asia Vice‑President of Awards E-mail: [email protected] Kazuo Tsutsui Marvin H. White REGION 8 Tokyo Institute of Technology Ohio State University Executive Director Eastern Europe & the former E-mail: [email protected] E-mail: [email protected] Christopher Jannuzzi Soviet Union IEEE Operations Center Tomislav Suligoj East Asia Vice‑President E-mail: [email protected] University of Zagreb Mansun J. Chan of Educational Activities E-mail: [email protected] Hong Kong Univ. of Sc. & Tech. Meyya Meyyappan Business Coordinator E-mail: [email protected] NASA Ames Research Center Joyce Lombardini E-mail: [email protected] IEEE Operations Center E-mail: [email protected]

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2011 TERM 2012 TERM 2013 TERM ISSUE DUE DATE

G. Baccarani (2) R. Huang (2) Arturo Escobosa (1) January October 1st M.J. Deen (2) S.S. Iyer (1) Juin Liou (1) April January 1st S. Deleonibus (1) M. Meyyappan (1) Mikael Ostling (1) July April 1st F. Guarin (1) H.S. Momose (2) M.K. Radhakrishnan (1) October July 1st S. Saha (1) A. Nathan (1) Ravi Todi (2) H. Shang (2) M. Shur (1) Albert Wang (1) The EDS Newsletter archive can be found on the Society web site at J.W. Swart (2) B. Zhao (1) Xing Zhou (1) https://www.ieee.org/portal/pages/society/eds/pubs/newsletters/ P.K.L. Yu (1) newsletter.html. The archive contains issues from July 1994 to the present.

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in the Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send address changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, Piscataway, NJ 08854.

Copyright © 2012 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed for direct commercial advantage, and the title of the publication and its date appear on each photocopy.

2 IEEE Electron Devices Society Newsletter m January 2012 u PComIng t EChnICal m EEtIngS

2012 IEEE IntErnatIonal mEmorY WorkShoP (ImW)

(continued from page 1) we could associate a memory There will be morning and technology to a specific market afternoon technical sessions, segment (e.g., RAM to com- along with a lively evening puter, NOR Flash to mobile panel discussion on a hot communication, NAND Flash topic in memory field. Techni- to consumer SSD), today the cal interaction among present- new electronic systems stack ers and attendees is encour- different memory technologies aged through question and and use a Controller to facili- answer sessions and allotting tate interfacing and managing ample time after formal pa- the overall memory. Moreover, per presentations for further Phase-Change memory tech- in-depth discussions. Organ- nology is entering in the mar- Lobby of Melià hotel in Milan ized breaks, including snacks ket, providing opportunities and the conference dinner and for novel applications and challeng- Asia. Attendees include industry lunch are provided as opportunities es for the technology development. leaders, researchers in academia to meet and exchange ideas with The characteristics of these complex and industry as well as end users of colleagues. The morning and after- memory systems in terms of density, memory products. The number of noon technical sessions are organ- performance, power consumption, attendees typically exceeded 250 in ized in a manner of providing time packaging and interfacing become recent years, reflecting the growing for the informal exchange and to of greater interest. The capabilities interest in the workshop. Each year enjoy the beauty of the Milan area. provided by the new memory tech- we receive over 80 paper submis- The hotel is conveniently situated nologies, new concepts and material sions and accept about 35 for oral in downtown Milan and it is easily proposed today will drive the defi- presentation, which corresponds to accessible from three international nition of these memory systems in about 40% acceptance rate. Princi- airports situated in the surround- the future. The IMW aims to answer pal topics for discussion are: device ing area. Milan has a rich cultural this need, extending the scope from physics, silicon processing, product background with evidences in all non-volatile memory, which had testing, new technologies including fields of art. It has also lots of nice been successfully discussed in more new structures and novel approach- restaurants offering traditional and than 30 years of NVSMW’s history, es, programmable logic, memory international cuisine in all town dis- to large memory technologies and cell design, integrated circuits, sol- tricts. Milan is the gateway to visit design, which were the focus of IC- id state disks and memory cards, Italy with high-speed train connec- MTD, in the view of systems. reliability and new applications. tions that connect it to Florence and Innovation is our tradition: IMW Following the tradition established Rome in less than three hours. For widened its focus while maintain- in previous IMW editions, Sunday more information about the confer- ing the positive characteristics of a the 20 May will be dedicated to a ence, please register at the website, workshop. IMW is a unique forum Short Course session. Moreover a www.ewh.ieee.org/soc/eds/imw. for both specialists in all aspects poster session for several qualified I look forward to seeing you next of microelectronic memory and papers is usually held after the pan- May at IMW 2012 in Milan. novices wanting to gain a broader el discussion. An important goal of understanding of the field. The IMW is to provide an informal envi- Agostino Pirovano workshop is usually attended by ronment to encourage discussions 2012 IMW Finance Chair a wide international community among participants and lively inter- Micron from North America, Europe and actions. Agrate Brianza (MB), Italy

January 2012 m IEEE Electron Devices Society Newsletter 3 2012 IEEE IntErnatIonal VaCuum ElECtronICS ConfErEnCE anD IntErnatIonal VaCuum ElECtron SourCES ConfErEnCE (IVEC-IVESC)

The IEEE Thirteenth International Lawrence Ives, Calabazas Creek Re- IVESC was inaugurated as the Tri- Vacuum Electronics Conference and search Service Cathode Workshop in 1978, Ninth International Vacuum Elec- Carol Kory, Teraphysics Corporation becoming the Tri-Service/NASA tron Sources Conference are being Baruch Levush, NRL Cathode Workshop in 1990 and held jointly in Monterey, California, Glenys Natera, Palisades Conven- continuing until 1996 (Eindhoven, April 24–26, as IVEC-IVESC 2012. The tion Management the Netherlands) when it, too, was meeting will be held at the Monterey Dev Palmer, Army Research Office expanded into the international Conference Center at the Portola Ho- Jack Tucek, Northrop Grumman Cor- conference it is now. At that time it tel and Spa under the sponsorship poration changed emphasis to encompass a of the IEEE Electron Devices Society Bernard Vancil, e beam, Inc. greater variety of vacuum electron (EDS). David Whaley, L-3 EDD sources. Since, then, it has grown The IVEC-IVESC 2012 confer- Joan Yater, NRL into a successful biennial interna- ence is organized by a committee Oversight of the conference is tional conference meeting sequen- made up of representatives of gov- provided by the EDS Technical Com- tially in the USA, Europe, and Asia. ernment, industry and university mittee on Vacuum Devices; an inter- It was most recently held in Nanjing, researchers. Members of the 2012 national committee chaired by Dr. China, in 2010. Conference Organizing Committee Baruch Levush of NRL. Since inception, IVEC and IVESC are listed below. IVEC was originally created in have become the premier inter- 2000 by merging the US Power national venues for presentations Conference Organizing Committee Tube Conference and the European in the field of vacuum electronics. General Chair : Will Menninger, L-3 ETI Space Agency TWTA Workshop, IVEC-IVESC 2012 will provide a fo- Technical Program Chair: David Abe, and has now expanded to a fully in- rum for presentation and discussion NRL ternational conference, being held of topics on vacuum devices, vacu- IVESC Technical Chair: Kevin Jensen, every other year in the US, and in um microelectronics, applications NRL Europe and Asia alternately every of vacuum devices, and the theory Monica Blank, CPI fourth year. Recent conferences and technological developments of John Booske, University of Wiscon- were held in Rome, Italy in 2009, vacuum electron devices. The com- sin-Madison Monterey, CA in 2010, and Banga- bination of IVEC with IVESC will pro- David Chernin, SAIC lore, India in 2011. You can learn vide an expanded presence in the Jim Dayton, Teraphysics Corporation more about IVEC by visiting Vacuu- key area of cathode and gun tech- Dan Goebel, JPL mElectronics.org, the EDS Vacuum nology and will offer attendees the Yehuda Goren, Teledyne Electronics Technical Committee opportunity to learn about recent ad- Mike Green, Varian website. vances in electron emission physics

4 IEEE Electron Devices Society Newsletter m January 2012 (e.g., thermal, field, secondary, and • High-power microwave 5) Applications of Vacuum photoemission) and electron source devices / RF directed energy Electron Devices technologies in greater depth. • Triodes, tetrodes and pentodes • Defense System developers will find that • Power switches • Space IVEC-IVESC provides a unique snap- 2) Vacuum Electron Sources • Radar shot of the current state-of-the-art and Technologies • Telecommunications in vacuum electron devices. These • Thermionic emitters • Medicine devices continue to provide un- • Photoemitters and secondary • Particle accelerators matched power and performance for emitters • RF interference advanced electromagnetic systems, • Field emitters / arrays • Instruments and lithography particularly in the challenging fre- • Materials and technology • Materials Processing quency regimes of millimeter-wave • Cathode design, fabrication, • Television and THz electronics. and characterization • Displays The 2012 IVEC-IVESC confer- • Accelerator emission phys- • Electric Propulsion ence will open the first day with a ics (breakdown, halo, Extended abstracts of up to two plenary session featuring invited emittance) pages in length for IVEC-IVESC 2012 speakers covering several subjects • Flat panel displays were due electronically by December of broad interest to the commu- 3) Systems and Subsystems 23, 2011. Information on the prepara- nity. This session will be followed • Microwave and millimeter tion and submission of the abstracts by two and a half days of techni - wave power modules can be found on the conference web cal presentations that include both • Electronic power conditioners, site at http://ivec‑ivesc2010.org. oral and poster sessions. Papers modulators, and supplies As in past conferences, the tech- will include presentations on a • Linearizers nical meeting and social events will wide range of classic vacuum de- • Amplifier/antenna coupling provide a unique opportunity to vices and vacuum electron sourc- • Device and system integration renew friendships with colleagues es. The technical subject categories • Reliability and friends, interact with custom- are listed below. 4) Technologies ers, and meet students. A highlight 1) Vacuum Electron Devices • Component parts (e.g. guns, of the meeting will be the presen- • Traveling-wave tubes (all circuits, windows, collectors) tation of the John R. Pierce Award types) • Analysis and computer for Excellence in Vacuum Electron- • Crossed-field devices (oscilla- modeling ics, the George Miram Award for tors and amplifiers) • Novel materials (e.g. dielec- Achievement in Cathode Research, • Klystrons trics, coatings, magnetic and a Best Student Paper Award. • Multiple-beam devices materials) Complete details about the meeting • Inductive output tubes • RF breakdown and these awards can be found on • Fast-wave devices (gyrotrons, • Linearity, intermodulation and the conference web site at http:// gyro-amplifiers) noise ivec‑ivesc2010.org. • Free electron lasers and • Novel measurement tech- masers niques William L. Menninger • THz amplifiers and oscillators • Miniaturization 2012 IVEC-IVESC General Chair • Pulse compression devices • Thermal power management L-3 Communications • Plasma filled amplifiers and and control Electron Technologies oscillators • Sensors and detectors Torrance, CA, USA

January 2012 m IEEE Electron Devices Society Newsletter 5 2012 IEEE IntErnatIonal rElIabIlItY PhYSICS SYmPoSIum (IrPS)

For 50 years, the IEEE International both the new engineer and experi- Evening Session Workshops Reliability Physics Symposium (IRPS) enced researcher. The tutorial pro- Workshops enhance the symposium has been the premier conference for gram contains both beginner and by providing attendees with an op- engineers and scientists to present expert tracks, and is broken down portunity to meet in informal groups new and original work in the area of into topic areas that allow the at- to discuss key reliability physics top- microelectronics reliability. Drawing tendee to participate in tutorials rel- ics with the guidance of exp erienced participants from the United States, evant to their work with a minimum moderators. Some of the workshop Europe, Asia, and all other parts of of conflicts between subject areas. topics are directly coupled to the the world, IRPS seeks to understand technical program to provide a ven- the reliability of semiconductor de- Year in Review Session ue for more discussion on the topic. vices, integrated circuits, and micro- These seminars provide a summary electronic assemblies through an of the most significant develop- Vendor Exhibits improved understanding of both the ments in the reliability community Held in parallel with the technical physics of failure as well as the ap- over the past year. This serves as sessions, the equipment demonstra- plication environment. a convenient, single source of in- tions pro vide a forum for manufac- IRPS provides numerous opportu- formation for attendees to keep turers of state-of-the-art laboratory nities for attendees to increase their current with the recent reliability equipment to present their products. knowledge and understanding of all literature. Industry experts serve as Attendees are en couraged to visit aspects of microelectronics reliabil- the “tour guide” and save you time the manufacturers’ booths for infor- ity. It is also an outstanding chance by collecting and summarizing in- mation and demonstrations. to meet and network with reliability formation to bring you up to date IRPS 2012 will be held April 15–19, colleagues from around the world. in a particular area as efficiently as 2012, at the Hyatt Regency Orange In addition to the three-day tech- possible. County in Anaheim, California, and nical program, IRPS offers a variety marks the 50th anniversary of the of events designed to broaden your Evening Poster Session influential symposium. We look for- knowledge of important topics relat- The poster session provides an ad- ward to seeing you in Anaheim! ed to semiconductor reliability. ditional opportunity for authors to For more information, see www. present their original research. The irps.org. Two‑Day Tutorial Program setting is informal and allows for Mark Porter The IRPS tutorial program is a com- easy, one-on-one discussions be- 2012 IRPS Publicity Chair prehensive event designed to help tween authors and attendees. Medtronics Tempe, AZ, USA

Hyatt Regency Orange County

6 IEEE Electron Devices Society Newsletter m January 2012 2012 IntErnatIonal ConfErEnCE on mICroElECtronICS (mIEl)

The 28th International Conference Based on the past decade of history, • “Technology Advances for Flex- on Microelectronics (MIEL 2012) will the technical program is expected to ible Electronics” (J. Burghartz, be held May 13–16, 2012, at the Fac- consist of about 140 contributed pa- IMS CHIPS, Germany); ulty of Electronic Engineering, Uni- pers by the authors from more than • “Quantum Computers: Registers, versity of Nis, Serbia. The 2012 MIEL 30 countries all around the world, Gates and Algorithms” (P. I. Ha- Conference will be organized by the which will be structured into oral and gouel, Optelec, Greece); IEEE Serbia & Montenegro Section – poster sessions. These papers, to- • “Surface Multiplasmonics for ED/SSC Chapter, in cooperation with gether with 13 invited papers, which Optical Sensing and Solar- the Faculty of Electronic Engineer- are to be presented by the world Energy Harvesting” ing, University of Nis, Ei-Holding leading authorities in the field of mi- (A. Lakhtakia, Pennsylvania Co.-Nis, and Society for ETRAN, cro- and nano-electronics, will form State University, USA); under the co-sponsorship of the the solid foundation. The associated • “Outlook and Challenges of Elec- IEEE Electron Devices Society (EDS), Mini-Colloquia on nano-technologies trostatic Discharge (ESD) Pro- with the cooperation of IEEE Solid and nano-devices will round off the tection of Modern and Future State Circuits Society (SSCS), and technical program of the conference. Integrated Circuits” (J. J. Liou, under the auspices of Serbian Min- The invited lectures are: University of Central Florida, USA); istry of Education and Science, Ser- • “Quantum Transport in Nanow- • “Short Circuit Ruggedness of bian Academy of Science and Arts, ires and Nanographene” (V. K. • IGBTs” (J. Lutz, TU Chemnitz, Academy of Engineering Sciences of Arora, Wilkes University, USA); Germany); Serbia, and City Assembly of Nis. MIEL is one of the most outstand- ing European conferences providing an international forum for the pre- sentation and discussion of the re- cent developments and future trends in the field of microelectronics. Since 1984, there is an aura of international- ization around the MIEL conferences, providing an opportunity for special- ists from both academic and indus- trial environments from the West and East, as well as from the countries of the Third World, to meet in an infor- mal and friendly atmosphere and ex- © Narodne Novine change experiences in the theory and practice of microelectronics. Since The University of Nis on the banks of the Nisava River 1995, MIEL was organized under the technical co-sponsorship of the IEEE EDS and then in 2000 received ap- proval for IEEE EDS co-sponsorship. The topics to be covered by the technical program of the conference include all important aspects of mi- cro- and nano-electronic devices, circuits and systems, ranging from materials and processes, technolo- gies and devices, device physics and modeling, process and device simulation, circuit design and test- ing, system design and packaging, © Narodne Novine and characterization and reliability. Nis, main city square

January 2012 m IEEE Electron Devices Society Newsletter 7 • “Spatial Statistics for Micro- Engineering” (K. Shiraishi, Uni- ulty of Electronic Engineering, one electronics and Materials Sci- versity of Tsukuba, Japan); of the organizers of the conference, ence” (E. A. Miranda, Universitat • “Photovoltaics: Emerging Role as has constantly given significant con- Autònoma Barcelona, Spain); a Dominant Electricity Generation tributions to the development of the • “NeoSilicon Based Nanoelectro- Technology in the 21st Century” University of Nis, as one of its most mechanical Information Devices” (R. Singh, Clemson University, USA) prosperous institutions. (S. Oda, Tokyo Institute of Tech- For registration and other infor- nology, Japan); The City of Nis is the administra- mation, visit the 2012 MIEL Home • “Development of Biomedical tive, cultural and economic center Page at http://miel.elfak.ni.ac.rs, or Applications of Non-equilibrium of southeastern Serbia. Situated in contact the MIEL Conference Secre- Plasmas and Possibilities for the Nisava Valley, some 240 kilome- tariat, Department of Microelectron- Atmospheric Pressure ters away from Belgrade, capital of ics, Faculty of Electronic Engineer- Applications” Serbia, it is one of the busiest road ing, University of Nis, A. Medvedeva (Z. Petrovic, The Institute of Phys- and railway junctions in this part of 14, 18000 Nis, Serbia; Tel.: +381 ics, University of Belgrade, Serbia); Europe. Good road and railway con- 18 529 326; Fax: +381 18 588 399; • “Spintronic Logic and Memory: nections put Nis within easy striking E-mail: [email protected]. Prospects and Perspective” (K. distance from Belgrade. Rich in an- The MIEL organizers and commit- Roy, Purdue University, USA); cient monuments that bear witness tee members look forward to seeing • “Recent Developments in Ad- of turbulent periods of its history, Nis you in May 2012. vanced Memory Modeling” is now a burgeoning seat of learning. (S. Selberherr, Technical Uni- The University of Nis, although rela- Ninoslav Stojadinovic versity Vienna, Austria); tively young, has come to be called 2012 MIEL General Chairman • “Computational Physics Ap- “my alma mater” by many of the University of Nis proach toward Micro-Electronics highly skilled professionals. The Fac- Nis, Serbia

EDS’S Inaugural WEbInar WIth ChEnmIng hu

(continued from page 1)

Shortly after our return from Taipei, The event took place on Wednes- ming’s webinar don’t worry, it’s working closely with EDS President day, July 27th. Professor Hu’s talk available as streaming video on the Renuka Jindal and the Executive Of- lasted nearly an hour, and treated at- EDS site (www.ieee.org/eds). And fice, we set out to quickly host our in- tendees to the back story of how the be sure to watch out for more we- augural online event. FinFET 3D Transistor came into binars to come in 2012. Details will Right around the time we were being as well as shed light on where be made available as our plans be- formulating plans for our webinar, the developments made by Prof. come finalized. Intel announced that it will use 22 Hu’s team may evolve in the years Lastly, if you have a topic you nm FinFET technology for CPU pro- to come. The talk was followed by a would like to see addressed in an duction starting late 2011. This rep- lively Question and Answer period upcoming webinar, or know of a resents the beginning of a new era in moderated by EDS President Renuka speaker whom we should contact the IC industry using 3D transistors. Jindal. During the QA, Renuka also about giving a webinar, please do It seemed like a very hot topic for pointed out that fellow EDS member not hesitate to reach out to the EDS our members to learn more about. Yutaka Hayashi filed a patent (Japa- Executive Director, Christopher Jan- Thankfully for us, Chenming Hu, an nese Patent 1791730) for a double- nuzzi at 732-562-2926 / c.jannuzzi@ IEEE Fellow and longtime EDS mem- gate structure in 1980 which was ieee.org. He would be happy to hear ber, was head of the UC Berkeley followed by related publications in from you. team that led the development of the 1985 and 1994. latest round of . We reached The response to Professor Hu’s Meyya Meyyappan out to him and he was happy to give talk was overwhelming. The 300 EDS Vice-President of a talk to EDS members. The talk was available ‘seats’ were filled up with- Educational Activities entitled FinFET 3D Transistors & the in just a few hours of announcing NASA Ames Research Center Concepts Behind it. the event. So, if you missed Chen- Moffett Field, CA, USA

8 IEEE Electron Devices Society Newsletter m January 2012 S oCIEtY n EWS

outgoIng PrESIDEnt’S mESSagE

160+ EDS chapters on the world with various stakeholders dur- map and provide the ability to re- ing my chapter visits both in the trieve information about any one USA and abroad I finally abol- of them. Another module was a ished the Chapter Partners pro- web-based meeting registration gram. Beginning this year, this process whereby we could have responsibility was transferred a record of who was interested in to a volunteer team that had al- Renuka P. Jindal EDS activities and provide us the ready existed before under the EDS President ability to reach out to these indi- auspices of our Subcommittees viduals. Yet another module was for Regions and Chapters (SRCs) Fellow EDS Members: the generation of a “members for the 10 regions of the world. I welcome you to my final report as only” section by which we could This contingent of volunteers has EDS President. One of the first, and provide a whole slew of member been grossly underutilized. The most critical initiatives I began, was benefits at low cost worldwide. new program is referred to as the to champion the formulation and of- I am happy to report that un- Chapters Mentor Program. EDS ficial adoption of the new EDS vision der the guidance of Paul Yu, EDS SRCs are being empowered by and mission statements. This took my President-Elect, the new website appropriate funding mechanisms entire 2 year term as President-Elect was launched last year and en- to reach out to our chapters. Each of the Society. I say critical because hancements continue to grow. SRC member is being entrust- contained in the words of these state- • Chapters. Our chapters are the ed with a group of chapters in ments is the guiding principle of cur- primary conduit for reaching proximity of their home location. rent and future EDS administrations. out to our member communi- Their function is to revitalize, EDS’s mission is “to foster profession- ty around the world. In keep- help coordinate more productive al growth of its members by satisfy- ing with the member focus, it is chapter activities and suggest ing their needs for easy access to and critical that this connection be positive ways to enhance mem- exchange of technical information, kept alive and vibrant. To en- bership by distributing chapter publishing, education, and technical gage with our chapters, EDS in- responsibilities outside a single recognition and enhancing public vis- vests over $250,000 every year organization. They will also foster ibility in the field of Electron Devices.” in the form of chapter subsidies, better communication between In short, it has been my job to ensure distinguished lecturer support chapters, volunteer leaders, and that everything we do adds value to and mini-colloquia. Also over the the EDS Executive Office. It is my membership in the Society. Here are years, thanks to Juin Liou, Vice- expectation that this will address several of the major initiatives I have President of Regions and Chap- the major challenge of member- spearheaded to realize this goal. ters, our chapters have enjoyed ship growth in years to come. • Website Enhancements. Be- a healthy growth with the cur- • Membership. An item close- ing a global Society, it was ex- rent number being over 160, ly related to EDS chapters is tremely important to improve among the largest of all IEEE so- EDS membership. All societ- our web presence and fully le- cieties. However the paradox has ies in Division 1 have, for vari- verage web technology. My vi- been that this chapter growth ous reasons, seen membership sion was that with a few mouse was not translated into mem- numbers decline for the past clicks, an EDS member should be bership growth. Something was several years. To me the rea- able to track EDS events around amiss! My predecessors ver- son is obvious. Back in the 70’s the globe. To realize this vision ified my suspicion that over when I joined IEEE and EDS, the I launched a complete revamp- the past many years our Chap- value proposition for becoming ing of the EDS website. An asso- ter Partners program was losing an EDS member was clear: to ciated module was to identify all steam. After many discussions get a copy of the latest technical

January 2012 m IEEE Electron Devices Society Newsletter 9 information delivered in your bership. In 2011, the news is even port from Doug Verret, Editor-in- mailbox every single month better. Thanks to aggressive mem- Chief of Transactions on Electron of the year. With the advent of bership campaigns launched at our Devices (T-ED) and Yuan Taur, Ed- electronic access and institu- conferences and our never-ending itor-in-Chief of Electron Device tional marketing of IEEE Xplore efforts to continually enhance the Letters (EDL). We are the fastest this value proposition has erod- value of membership in the society, publishing group within the IEEE. ed over time. Professionals can I am proud to say that as 2011 draws Feedback is a necessary element now access technical informa- to a close EDS’s membership is up for healthy growth of any activi- tion via the WEB using their 4% over 2010. This is no surprise ty. To further enhance the quality institutional subscription with- since we give back to our members of our publications, I initiated the out becoming an IEEE member. so much more in return for small implementation of an on-line au- However, I view challenges and membership fees among the lowest thor feedback for T-ED and EDL. opportunities are two sides of in IEEE societies. The obvious logi- The results have been extremely the same coin. We must be ad- cal question is how do we generate gratifying. However, I do see chal- ept with and adopt technologi- resources to serve our members? lenges due to a rapid growth in cal advances. We now need to The answer is our publications and the number of pages we publish leverage technology to create conferences supported by our end- and the increasing page length new benefits to attract mem- less cadre of volunteers. both of which are a drag on the bers. Over the years we have • Publications. Perhaps the EDS quality and surplus. Going be- developed several EDS MEM- business that I am most famil- yond EDS publications, with the BERS ONLY benefits including iar with is the publication side of help of Samar, I have launched a the following: the house since becoming an As- campaign to streamline several • EDS archival DVD sociate Editor back in 1987. EDS’s of our co-sponsored publications • EDS annual update DVD publications are near and dear including the Journal of Micro- • IEDM short course DVDs to me and I take pride in making electromechanical Systems and • EDS-Educate Webinar series sure that the quality of our publi- Transactions on Semiconductor on timely topics cations continues to be enhanced Manufacturing. We also need to • QuestEDS – an online forum treating each issue as a master- create new revenue streams and to get answers to technical piece to share. What has sweet- embrace areas of rapidly increas- questions answered by world ened the pie even more is that ing technical activity. With this experts back in the 80’s EDS conference in mind, I am very pleased to re- • Manuscript copy-editing ser- revenue was the primary support port that we were able to spawn vice for papers authored by all mechanism for EDS activities and a multi-society sponsored brand EDS members honestly I was jealous since our new IEEE Journal of Photovol- • EDS sponsored conference publications produced little sur- taics with two robust issues in registration discounts which plus and once even lost money. the Fall of 2011. Not only is this return your membership fees However, over the years, under publication unique in the sense and more my tenure as EIC and Vice-Pres- that it provides a forum for ex- • Electronic access to all EDS ident of Publications, we have change of ideas in a blossoming and several cross-society pub- turned the tide around and our area but it also provides a much lications publications revenue became needed IEEE presence in the field We continue to further enhance our the dominant fraction of the EDS of photovoltaics. This is impor- benefits portfolio with new items budget. Transactions on Device tant in keeping with our mission under consideration such as EDS- and Materials Reliability, a joint of “Public Visibility”. Clean en- Connect, a web based EDS mem- publication with the Reliabili- ergy is one of the corner stones bers-only portal to build a technical ty Society, thanks to the efforts of attempting to serve humani- home for our members, electronic of EIC Tony Oates, has turned to ty at large in concert with EDS’s table-of-contents delivery, as well as profitability although more prog- Mission. important content and online events ress is needed. I therefore find it • Conferences. Conferences are exclusively for EDS members. I am particularly gratifying that under an important part of what EDS happy to report that in 2010 EDS’s the leadership of Samar Saha, brings to its members and the membership slide was mitigated, Vice-President of Publications, world. Each year, EDS spon- and we posted modest gains by the our publications continue to sors over 100 meetings and con- year’s end, thanks to the efforts of flourish as our turnaround times ferences, nearly 30 of which Albert Wang, Vice-President of Mem- continue to get shorter with sup- we financially back. However,

10 IEEE Electron Devices Society Newsletter m January 2012 managing so many conferenc- all parts of the globe. With this nical committees. One way of es is not a simple task. Hence, I backdrop I am sure you can un- achieving this is by aligning our launched a major initiative to re- derstand why education and conferences with our technical vamp our conference portfolio dissemination of technical in- committees. Thus we have tak- keeping a balance between rev- formation has been a top priori- en the important steps to bet- enue generation and service to ty under my administration and ter leverage the expertise of our the technical community. Under will continue to be the case in technical committees to help re- the leadership of Bin Zhao, I am the foreseeable future of EDS. define EDS’s conference offer- encouraged by the way our con- I have launched a multitude of ings to meet the needs of our ference business weathered the initiatives listed under member ever-changing industry. In addi- financial storm of the past few benefits including EDS-ETC – En- tion, Achim is spearheading an years, all without ever sacrificing gineers Demonstrating Science: exciting project with Wiley pub- the quality and quantity of events an Engineer Teacher Connec- lishing to commemorate EDS’s EDS has been able to support. tion, a high-school outreach pro- 60th anniversary and highlight Based on the suggestion of Jon gram being rolled out to EDS the major milestones in the his- Candelaria, previous VP of Meet- chapters worldwide. I thank Fer- tory of electronic devices. It is ings and Conferences, I have nando Guarin for taking the lead my expectation that our tech- now instituted a new process for on this. Another initiative is the nical committees will be the conference management. We are availability of our International driving force behind a signifi- bringing together the functions Electron Devices Meeting (IEDM) cant portion of EDS sponsored of EDS technical committees short-course videos to our chap- activities. and conference management. ters for free and to EDS student • Awards. After all the hard work Bin along with Achim Burghartz, members of $9.99 and full mem- comes celebration and rejoic- VP of Technical Activities, have bers at a slightly higher price. As ing. EDS has long enjoyed a ro- come up with a mapping of all of mentioned earlier our EDS-Ed- bust and distinguished awards our conferences into our techni- ucate Webinar series is another program whereby we recognize cal committees. Going forward such effort to keep our members individuals in different areas of each technical committee will competitive in the face of rap- activity and membership grade “own” a set of conferences to id technological advancements. through a series of awards. We ensure the highest standards of In addition, the financial support invest nearly $100,000 in our quality that the professional com- we provide in sponsoring hun- awards each year. I have ob- munity has come to expect of dreds of technical talks through served that while we are very EDS. These committees will work our Distinguished Lecture and good at evaluating the nomi- proactively with their conferenc- Mini Colloquia programs go a nations we could do better in es to invite conference stakehold- long way in fulfilling our mis- soliciting them. As such, in con- ers as committee members to sion of satisfying the education- sultation with Marvin White, nurture a closer relationship be- al needs of our members. I want Vice-President of Awards, we tween EDS and its conferences. to thank Meyya Meyyappan, have now lowered this thresh- This is a vital step in keeping the Vice-President of Educational old for nomination. All you need community close knit. Activities, who has been instru- is to write a paragraph of why • Education. I remember a bum- mental in managing these activ- an individual should be consid- per sticker back when I was ities to best match our outreach ered for an award, and if the “growing up” at Bell Labs in to chapters worldwide. committee agrees, we will do Murray Hill, New Jersey. It said • Technical Activities. At the heart the rest including finding a will- “If You Think Education Is Ex- of Electron Devices Society is ing nominator who is able to put pensive, Try Ignorance.” I be- its technical activities. As such, in the time and effort needed to lieve this statement to be as true I have high expectations of our generate a competitive nomi- today as it was 30 years back technical committees. Unfortu- nation. I want to thank Marv for at the local, regional, nation- nately, over several past Vice- providing guidance to our vari- al and international levels. We Presidential terms technical ous awards committees. I expect truly live in a global communi- committees have managed to re- EDS awards to become highly ty and it is important that educa- main fairly dormant. As such, subscribed in the future as a re- tion be an important part of the when Achim Burghartz took over sult of this change. Of course, agenda for every volunteer or- as VP, his primary focus was this will mean more work for ganization as it reaches out to on how to rejuvenate our tech- the volunteers but that is what

January 2012 m IEEE Electron Devices Society Newsletter 11 it is all about: honoring the best ence matrix and EDS Chapters University of Louisiana at Lafayette. of the best. In this vein, I cham- Mentor Program, ongoing man- I dissuaded myself from attempt- pioned the establishment of an agement of the publication and ing this daunting task of developing EDS Celebrated Member status. conference portfolios, and most this comprehensive list since I was The idea was to recognize those important of all continuing to bound to miss many. So I want to professionals whose work has generate new member benefits. thank all of you around the world profoundly changed the world At the institute level I see Open who are in my thoughts, in making around us. Our current celebrat- Access, Member and Geograph- my Presidency a rewarding experi- ed members include Nobel Lau- ic Activities (MGA) and Technical ence and giving me an opportunity reates and long time EDS alumni Advisory Board (TAB) interac- to grow professionally. Managing George Smith and Herb Kro- tions and IEEE membership such an accomplished and elite emer. I am very pleased about models as some of the issue we group was indeed an educational the Celebrated Member Program will need to tackle. experience which I will cherish. because it gives all EDS mem- I must state that success of EDS is As I complete this article, it is bers an opportunity to share in truly a team success. As President, humbling to note I have been able to the work and excitement of our I have been blessed with an excel- fulfill my election promises in serv- illustrious members, and draw lent group of dedicated volunteers ing the global Electron Devices com- from them inspiration to contin- and EDS staff in Piscataway, who munity. At the same time it is also ue, in the words of EDS’s vision have gone above and beyond the relieving to realize that my tenure as statement, promoting excel- call of duty to thrash out ideas and EDS President is drawing to a close. lence in the field of electron de- help implement them. At times, we However, in so many ways, I feel that vices for the benefit of humanity. have hit rough spots but that is part my time at the helm of EDS has only Congratulations to you both in of the game. Of the other members just begun; to see all the initiatives accepting this recognition and of the executive team that I want that we have launched, flourish over getting EDS closer to becoming to thank, include Stephen Parke as time and bear fruit. Looking back a household acronym. EDS Treasurer for keeping us on a on all that we have accomplished, I • Challenges Ahead. As I pass on fiscally sound track and Jim Merz as realize it has indeed been a wonder- the baton to President-Elect Paul EDS Secretary for keeping our spir- ful journey. My involvement went Yu, I want to thank him for pro- its high in spite of institutional and revving up into high gear when I viding me on-going support on personal challenges. I also want to became President-Elect in 2009 and as as-needed basis on many is- thank EDS Junior Past-President Cor will wind down to a more relaxed sues that came up during my Claeys and Senior Past-President pace over several years to come. I tenure as President. His taking Ade Ilesanmi for helping me run the started as a student member of EDS. up the slack was invaluable in Society in the face of several thorny From there I became an author, a re- the face of my work related and issues at the Institute level. I espe- viewer, an editor, the Editor-in-Chief, personal commitments. I truly cially want to thank EDS Executive and eventually the Vice President of appreciate it. I must confess that Director, Chris Jannuzzi, who re- Publications before becoming Presi- the affairs of EDS are not all tak- placed Bill Van Der Vort a long-time dent in 2010. All told, EDS has been en care of by any means. There EDS stalwart and IEEE staff member, my professional home for 35 years… are significant challenges that who continues to convert our ideas and counting. lie ahead at both the Institute to reality in each area of EDS en- Renuka P. Jindal and the society level. Some of deavor. The list of fellow volunteers EDS President the society level issues include who I would like to thank is LONG. University of Louisiana a successful implementation of It is long enough to fill a few pag- at Lafayette the technical committee confer- es and includes my students at the Lafayette, LA, USA

12 IEEE Electron Devices Society Newsletter m January 2012 EDS anD thE IEEE tEChnologY managEmEnt CounCIl

The EDS is a Note that all EDS members can at the IEDM 2010 in Baltimore. The founding Mem- now automatically benefit from TMC would welcome the opportuni- ber Society (one TMC, and if they are interested in ty to work with any of the other EDS of fourteen) of technology management, they can conferences to organize similar ses- the IEEE Technol- get involved in their local TMC Chap- sions or management tracks within ogy Management ters. There are several dozen TMC the conference – or even to consider Council (TMC) and Chapters across the US – these were having a full-day management-fo- Ravi M. Todi Ravi M. Todi is formed from the previous EMS Chap- cused workshop or tutorial session EDS Representative currently the EDS ters, so many of them are already connected with the main conference. TMC Board of voting representa- very active and all are now open to Finally, EDS members may want Governors tive on its Board any EDS member. Just as being ac- to consider, when rejoining IEEE of Governors. The tive in the local EDS Chapter offers for 2012, getting a subscription to TMC provides a critical opportunity to opportunities for networking and en- the TMC publications. The Transac- network with leaders from the other hancing technical knowledge in the tions on Engineering Management Member Societies in their common EDS field of interest; becoming ac- is more research-oriented, and the pursuit of the mission and goals of the tive in a local TMC Chapter offers op- very popular Engineering Manage- TMC, and to explore additional ways portunities for enhancing knowledge ment Review (EMR) is a compilation for the Member Societies to interact and skills in the area of technology of papers reprinted from the most re- with each other. management, while networking with spected Engineering and Technology The TMC’s mission is to assist other management professionals. Management journals in the world, “technology professionals pursuing The TMC sponsors an annual as selected by its editorial board. The excellence in management of inno- conference, the ITMC, as well as co- EMR is targeted more for the practic- vation, business, and entrepreneur- sponsoring numerous regional con- ing professional, and should be of in- ship.” It was formed by IEEE in 2008 ferences, workshops and events on terest to anyone with interest in the to replace the existing Engineering technology and innovation manage- management of technology, manage- Management Society (EMS), which ment. Schedules and details on all ment principles in general, or who is had been active for many decades. of these can be found on the TMC a technical professional responsible The primary difference between website shown below. In addition, for technology management or striv- an IEEE Council and Society is that TMC is also becoming more active ing to become a manager. individuals join and pay dues to in sponsoring management special More information about the TMC Societies, while Councils are actu- sessions and tutorials within Mem- can be found at http://www.ieeet- ally supported by their member So- ber Society technical conferences, mc.org/ or contact Ravi M. Todi at cieties. So the TMC was formed with with content that is targeted to be [email protected]. the logic that there is broad interest useful specifically to managers in Ravi M. Todi across many different IEEE Societ- that society’s technical field of inter- EDS Representative ies in technology management, so est. For example, TMC organized an TMC Board of Governors a Council could serve them all more evening panel session entitled “Man- IBM Microelectronics effectively. aging Innovation: An Oxymoron?” Hopewell Junction, NY, USA

fElloW nomInatIonS arE noW onlY aCCEPtED ElECtronICallY

A change to how Fellow nomination Board of Directors approved the The nomination period for the 2013 forms are submitted will take place change to go completely electronic. Fellow Class is now open and will con- for the 2013 Fellow Class. Previously, The 2013 Fellow Class will be the tinue through March 1, 2012. Nomi- nominations were submitted either first class where all the forms (nomi- nee eligibility requirements, steps to by hard copy OR through the Fel- nations, references, endorsements) becoming an IEEE Fellow, nomina- low online application. After allow- will have to be submitted electroni- tion instructions and much more can ing both methods for many years, cally. No hard copy forms will be ac- be found on the IEEE Fellow Program the Fellow Committee and the IEEE cepted for any reason. Web page at www.ieee.org/fellows.

January 2012 m IEEE Electron Devices Society Newsletter 13 CongratulatIonS to thE 16 EDS mEmbErS rECEntlY ElECtED to IEEE SEnIor mEmbEr graDE!

Mahmoud Almasri* Wim Melis Yunseop Yu Kuan-Neng Chen* Sunhom (Steve) Paak* Prasad Venkatraman Roger De Keersmaecker* Sangwoo Pae Wojciech Wojciak Lixin Ge* Jagdish Patra Yi Zhao Avik Ghosh* Heike Riel Raj Kumar Jorg Schulze

* = Individual designated EDS as a credit certificate for up to US $25 for To apply for senior member sta- nominating entity a new IEEE society membership. Upon tus, fill out the on-line application: If you have been in professional prac- request a letter will be sent to employ- http://www.ieee.org/organizations/ tice for 10 years, you may be eligible for ers, recognizing this new status. rab/md/smelev.html. Senior Membership, the highest grade For more information on senior Please remember to designate of membership for which an individual member status, visit: http://www. the Electron Devices Society as your can apply. New senior members re- ieee.org/web/membership/senior- nominating entity. ceive a wood and bronze plaque and members/status.html

announCEmEnt of thE 2011 EDS Ph.D. StuDEnt fElloWShIP WInnErS

effect materials, vacuum, and emerg- Sungsik Lee ing materials. Specific applications of graduated from these devices include bioelectronics, Korea Advanced biomedical, computation, communi- Institute of Sci- cations, displays, electro and micro ence and Tech- mechanics, imaging, micro actuators, nology (KAIST), optical, photovoltaics, power, sensors South Korea, in and signal processing. 2006 and joined Meyya Meyyappan Agis Iliadis The Society is concerned with a national laboratory, ETRI, South EDS Vice-President EDS Ph.D.& of Educational Masters Student research, development, design and Korea, as a research staff for inves- Activities Fellowship Chair manufacture related to materials, tigating solid state sensors and their processing, technology, and applica- interface circuits. He is currently a tions of such devices, and scientific, Ph.D. candidate under the supervi- The Electron Devices Society Ph.D. technical, educational and other ac- sion of Prof. Arokia Nathan, Fellow Student Fellowship Program was de- tivities that contribute to the ad- IEEE, in London Centre for Nanotech- signed to promote, recognize, and vancement of this field. nology, University College London, support Ph.D. level study and research EDS proudly announces three EDS United Kingdom. He is the recipient within the Electron Devices Society’s Ph.D. Student Fellowship winners for of both ORS and GRS Scholarships field of interest: The field of interest for 2011. Brief biographies of the recipi- for the entire Ph.D. program in Uni- EDS is all aspects of engineering, phys- ents appear below. Detailed articles versity College London. His research ics, theory, experiment and simulation about each Ph.D. Student Fellowship is focused on the physics underlying of electron and ion devices involving winner and their work will appear in the unique conduction mechanism insulators, metals, organic materials, forthcoming issues of the EDS News- in amorphous oxide semiconductor plasmas, , quantum- letter. thin film transistors (TFTs) as well as

14 IEEE Electron Devices Society Newsletter m January 2012 particularly investigates density of accomplishments in reliability and Deblina was an Intern in Prof. trap states using a field effect meth- its application to micro and nano- Laurens Molenkamp’s Spintronics od based on numerical analysis. He electronics. Group, Wurzburg University, Germa- has more than 23 scientific contribu- To date, he has authored/co-au- ny during her undergraduate studies tions, including 5 journal papers as thored approximately 43 interna- (summer of 2007) where she worked the first author. He is a reviewer of tional journal and conference publi- on modeling of spin polarized current high impact journals, such as IEEE cations and an invited book chapter through g ated vertical double barrier EDL, IEEE TED, IEEE/OSA JDT, and a as well. He also serves on the review structures. During her graduate work member of IEEE EDS and MRS. committee for various IEEE journals at UCSB, she has been an intern with (TED, EDL and TDMR) and was in- Infineon Technologies AG, Munich, Nagarajan Raghavan vited to join the technical program Germany, and with the Interuniver- was born in Banga- committee of IIRW and ESREF 2011. sity Microelectronics Centre (IMEC), lore, India. He re- He is an active member of the IEEE Leuven, Belgium (from November ceived his B.Eng, since 2005. 2009 to February 2010) where she 1st Class Honors, worked on the analysis of the im- (Electronics Engi - Deblina Sarkar pact of strain on ESD robustness in neering, 2007), S.M. received the nanoscale transistors. During the (Advanced Ma- B.Tech. degree in summer of 2010, she worked on the terials for Micro & Nano Systems – electronics en- fabrication of novel silicon-nanowire AMM&NS, 2008) and M.Eng (Mate- gineering from based tunnel-FETs as a Visiting Stu- rials Science and Engineering, 2008) Indian School of dent Researcher with the Institute from Nanyang Technological Uni- Mines University of Microelectronics, Singapore. De- versity (NTU), National University of (ISMU), Dhanbad, blina has published over a dozen Singapore (NUS) and Massachusetts India, in 2008. She is currently work- papers in leading international con- Institute of Technology (MIT), Boston, ing toward the Ph.D. degree at the ferences and journals including the USA respectively. Research Laborato- IEDM, IITC, IEEE Electron Device Let- He is currently pursuing his Ph.D. ry in the Department of Electrical and ters, IEEE Transactions on Electron in the Gate Oxide Reliability research Computer Engineering, University of Devices and Applied Physics Letters. group at the Division of Microelec- California, Santa Barbara, USA, un- She was the recipient of the Best Pa- tronics, EEE, NTU under Prof. Pey der the supervision of Prof. Kaustav per Award at the All India Paper Pre- Kin Leong focusing on reliability Banerjee. Her undergraduate re- sentation Competition “Vyakhan” in modeling and statistical character- search was focused on novel na- 2008 and the “Best Female Student ization of novel high-k gate dielectric noscale device design and spintron- Award” during her undergraduate stacks for logic and resistive mem- ics. During her M.S. degree (March studies at ISMU. ory applications. His other research 2011) at UCSB, she worked on the interests include electromigration, modeling and analysis of high-fre- Meyya Meyyappan low-k dielectric breakdown, 3D inter- quency effects in graphene based EDS Vice-President of Educational connects and reliability statistics. interconnects and on-chip inductors Activities Nagarajan was the recipient of as well as novel impact-ionization NASA Ames Research Center the NTU President’s Research Schol- . Her doctoral research Moffett Field, CA, USA ar (2004–2006) and Singapore-MIT is focused on tunneling field-effect Alliance (SMA) Graduate Fellowship transistors (TFET) including physics- Agis Iliadis (2007–2008) awards. He is also one based modeling of interband-tunnel- EDS PhD & Masters Student of the five recipients of the IEEE Re- ing, along with design and fabrica- Fellowship Chair liability Society Graduate Scholar- tion of novel high-performance and University of Maryland ship Award in 2008 for his research low-power TFET structures. College Park, MD, USA

January 2012 m IEEE Electron Devices Society Newsletter 15 CALL FOR NOMINATIONS 2012 IEEE Electron Devices Society PhD Student Fellowship Description: One year fellowships awarded to promote, recognize, and support PhD level study and research within the Electron Devices Society’s field of interest: The field of interest for EDS is all aspects of engineering, physics, theory, experiment and simulation of electron and ion devices involving insulators, metals, organic materials, plasmas, semiconductors, quantum-effect materials, vacuum, and emerging materials. Specific applications of these devices include bioelectronics, biomedical, computation, communications, displays, electro and micro mechanics, imaging, micro actuators, optical, photovoltaics, power, sensors and signal processing. It is expected that three fellowships will be awarded, with the intention of at least one fellowship being given to eligible students in each of the following geographical regions every year: Americas, Europe/Middle East/Africa, and Asia & Pacific. Only one candidate can win per educational institution.

Prize: US$5,000 to the student and if necessary funds are also available to assist in covering travel and accommodation costs for each recipient to attend the EDS Administrative Committee meeting for presentation of the award plaque. The EDS Newsletter will feature articles about the EDS PhD Fellows and their work over the course of the next year.

Eligibility: Candidate must: be an IEEE EDS student member at the time of nomination; be pursuing a doctorate degree within the EDS field of interest on a full-time basis; and continue his/her studies at the current institution with the same faculty advisor for twelve months after receipt of award. Nominator must be an IEEE EDS member. Previous award winners are ineligible.

Basis for Judging: Demonstration of his/her significant ability to perform independent research in the fields of electron devices and a proven history of academic excellence.

Nomination Package: . Nominating letter by an EDS member . Two-page (maximum) statement by the student describing his or her education and research interests, accomplishments and graduation date . One-page biographical sketch of the student (including student's mailing address and email address) . One copy of the student’s under-graduate and graduate transcripts/grades. Please provide an explanation of the grading system if different from the A-F format. . Two letters of recommendation from individuals familiar with the student’s research and educational credentials. Letters of recommendation can not be from the nominator.

Timetable: . Nomination packages are due at the EDS Executive Office no later than May 15, 2012 . Recipients will be notified by July 15, 2012 . Monetary awards will be given by August 15, 2012 . Formal award presentation will take place at the EDS Administrative Committee Meeting in December 2012. . Nomination packages can be submitted by mail, fax or e-mail, but a hard copy must be received at the EDS Office.

Send completed package to: IEEE Operations Center EDS Executive Office - PhD Student Fellowship Program 445 Hoes Lane, Piscataway, NJ 08854 USA

For more information contact: [email protected] Visit the EDS website: http://eds.ieee.org/eds-phd-student-fellowship-program.html

16 IEEE Electron Devices Society Newsletter m January 2012 VISIt bY EDS PrESIDEnt rEInVIgoratES thE unIVErSItY of maSSaChuSEttS/SPrIngfIElD ChaPtEr

On July 29, 2011, IEEE EDS President, One of the areas that was discussed wondering, “M5” stands for Marcus, Renuka Jindal, visited the UMass/ was the ECE student workspace Room #5, but M5 sounds cooler! Springfield Chapter to give a talk known as M5 (previously shown) While in Amherst, Prof. Jindal about the Society and to reinvigo- which is intended to provide students gave a talk about the Electron Devic- rate the chapter in Amherst. He met a place to explore electronics in a set- es Society, its long term membership with the ED Chapter Chair, Prof. Paul ting outside of the classroom. The M5 goals, and the variety of ways that it Siqueira, and other members of the workspace has a parts wall, at left in supports its members. Renuka also faculty to discuss ways in which EDS the previous image. With the help gave a talk about one of the areas of can become more closely integrated of some local artists, students have his expertise, “Nano-FET fluctuation to the activities on campus and how painted the area near the “parts wall” physics” in which he talked about members can become more involved with glow-in-the-dark paint. The parts inherent noise mechanisms and in the Society. wall consists of integrated circuits and how they can be improved through discrete components, donated from changes in the device structure. alums and local businesses that stu- Because of Prof. Jindal’s visit, the dents can use freely to fuel their ideas chapter is looking forward to a new for projects in . year with new goals for increasing The 5,000 square foot facility also membership and participation. The supports a music studio, space for chapter wishes to thank Prof. Jindal TA office hours, a lounge to encour- for his efforts in the EDS as a whole age informal student interactions and and for taking the time to visit the a project room for constructing one University of Massachusetts. of the latest members of the facility, Paul Siqueira Emma-five, a semi-autonomous robot ED Springfield Chapter Chair A view inside M5, the student interactive meant to explore the campus and Am- University of Massachusetts workspace in UMass’ Department of ECE herst town center. In case you were Amherst, MA, USA

EDS DIStInguIShED lECturEr VISItS lIma, PEru

EDS Distinguished Lecturer, Prof. control” (August 16th), and “Micro- presentation, Prof. Santos explained Edval J.P. Santos, from the Devices electronics Education: VHDL Custom IEEE and EDS member benefits to and Nanostructures Laboratory of Design & Fabrication” (August 17th), the attendees. Universidade Federal de Pernam- respectively. The total attendance of His lectures were of great inter- buco, Brazil, visited Peru in August approximately 105 people consisted est and very valuable, containing 2011. He was invited by the ED Peru of professionals and students, many not only theory but practical appli- Chapter as a guest speaker to give of whom (85%) were not IEEE or EDS cations too. There were many ques- lectures at three universities in Lima, members. Using EDS’s standard tions from the audience and Dr. the capital city of Peru. Prof. Santos Santos answered them charmingly was received at the Universidad Ri- and clearly. He also had the op- cardo Palma (URP), the Universidad portunity to meet with the ED Peru de San Martín de Porres (USMP) and Chapter members and IEEE Peru the Pontificia Universidad Católica Section directors in order to moti- del Perú (PUCP). vate local and international coop- Prof. Santos presented the follow- erative ED activities and to increase ing lectures at the universities: “De- membership. sign and microfabrication of smart Jorge Tejada sensors for the oil and gas industry” Distinguished Lecturer, Prof. Edval J.P. ED Peru Chapter Chair (August 16th) “Electronic sensing Santos, from the Universidade Federal de Universidad de San Martín de Porres of Pisco alcohol content for quality Pernambuco, Brazil Lima, Perú

January 2012 m IEEE Electron Devices Society Newsletter 17 CALL FOR NOMINATIONS 2012 IEEE Electron Devices Society Masters Student Fellowship

Description: One-year fellowships awarded to promote, recognize, and support graduate Masters level study and research within the Electron Devices Society’s field of interest: all aspects of engineering, physics, theory, experiment and simulation of electron and ion devices involving insulators, metals, organic materials, plasmas, semiconductors, quantum-effect materials, vacuum, and emerging materials. Specific applications of these devices include bioelectronics, biomedical, computation, communications, displays, electro and micro mechanics, imaging, micro actuators, optical, photovoltaics, power, sensors and signal processing.

Three fellowships will be awarded, with the intention of at least one fellowship being given to eligible students in each of the following geographical regions every year: Americas, Europe/Mid-East/Africa, Asia & Pacific. Only one candidate can win per educational institution.

Prize: US$2,000 and a plaque to the student, to be presented by the Dean or Department head of the student’s enrolled graduate program.

Eligibility: Candidate must: be an IEEE EDS student member at the time of nomination; be accepted into a graduate program or within the first year of study in a graduate program in an EDS field of interest on a full- time basis; and continue his/her studies at a graduate education institution. Nominator must be an IEEE EDS member and preferably be serving as the candidate’s mentor or faculty advisor. Previous award winners are ineligible.

Basis for Judging: Demonstration of his/her significant ability to perform research in the fields of electron devices and proven history of academic excellence in engineering and/or physics as well as involved in undergraduate research and/or supervised project.

Nomination Package: . Nominating letter by an EDS member who served as candidate’s mentor or faculty advisor. . Two-page (maximum) statement by the student describing his or her education and research interests, accomplishments and graduation date. This can include undergraduate, graduate and summer internship research work. . One-page biographical sketch of the student (including student's mailing address and e-mail address) . One copy of the student’s transcripts/grades . A letter of recommendation from an individual familiar with the student’s research and educational credentials. Letters of recommendation cannot be from the nominator.

Timetable: . Nomination packages are due at the EDS Executive Office no later than April 15, 2012 . Recipients will be notified by June 15, 2012 . Monetary awards will be presented by the Dean or Department Chair of the recipient's graduate program at the beginning of the next academic term. . Nomination packages can be submitted by mail, fax or e-mail, but a hard copy must also be received at the EDS Office.

Send completed package to: IEEE Operations Center EDS Executive Office - Masters Student Fellowship Program 445 Hoes Lane, Piscataway, NJ 08854 USA

For more information contact: [email protected] Visit the EDS website: http://eds.ieee.org/eds-masters-student-fellowship-program.html

18 IEEE Electron Devices Society Newsletter m January 2012 rEPort on thE IEEE EDS mInI-ColloQuIum hElD In romE, ItalY

The 2nd Edition of the Workshop on Micro and NanoElectronics was held in Rome, Italy, September 29–30, with many technical talks given on the state of semiconductors by re- searchers from universities, research centers and industry. All had the op- portunity to present their state-of- the-art activity and the perspective of development of their laboratory within the frame of national context, with the following European Coun- tries represented: Germany, France, Andreas Wild, Esecutive Director of ENIAC Belgium, Slovakia, Sweden, Poland Undertaking Fabrizio Famà, Micron Technology and Italy.

Enrico Sangiorgi, University of Bologna, Board Round Table with Giorgio Chiozzi (R&D Director of Infineon PD), Sergio Galbiati (GM of Micron), of the ENIAC Platform Pietro Palella (GM of STMicroelectronics)

The focus of the second day’s Directors of European Research As a result, a few strategic steps re- program was on the trends and Agencies and Associations, par- garding the Roadmap were fixed by perspectives of the research on ticipated in the program. An excit- Industries (Infineon, Micron Tech- semiconductors and nanoelectron- ing discussion transpired with the nology, STMicroelectronics.) ics in Europe. Attendees from the General Managers and Directors of European Community, the Euro- Industries, the general Director for Fernanda Irrera pean Electronics and Technology the International Research of the ED Rome Chapter Chair Platforms, the European Investment Italian Ministry of University and University of Rome Bank, together with Presidents and Research, and all the researchers. Rome, Italy

January 2012 m IEEE Electron Devices Society Newsletter 19 rEPort on thE IEEE EDS mInI-ColloQuIum hElD In manChEStEr, EnglanD

The IEEE EDS Mini-Colloquium on Advanced Electron Devices and Technology was held on August 26, 2011, at the University of Manches- ter, England, United Kingdom. The event was organized to celebrate the establishment of the new IEEE ED Dublin Chapter in Ireland. The new Chapter Chair, Professor Pat- rick McNally from Dublin, attended the meeting and delivered an invited talk. The event was jointly organized by the IEEE AP/ED/MTT/PHO UKRI Chapter and the IEEE University of Professor Ali Rezzadeh (front row, center), Emerson Sinulingga (front row, right), Professor J. J. Manchester Student Branch. Liou (second row, center), Professor Patrick McNally (second row, second right) and Dr. Kamal The event began with a welcome Samanta (second row, right), with some attendees address by the Chair of the UKRI Chapter, Professor Ali Rezazadeh, tion of Modern and Future Integrated The Poster presentations by and followed by an overview of Circuits;” Professor Patrick McNally Ph.D. students provided a good at- the IEEE and the activity of EDS by on “Addressing Semiconductor mosphere for further discussions. Professor J. J. Liou, the EDS Vice- Roadmap Challenges: New X-Ray Dif- During the refreshment and lunch President for Regions/Chapters. The fraction Imaging Techniques for Im- breaks all the students and invited Vice-Chair of the IEEE University of aging Wafer Warpage in Systems on speakers had the opportunity to dis- Manchester Student Branch, Mr. Chip;” and Dr. Kamal Samanta from cuss their views on the work of the Emerson Sinulingga, also welcomed Astrium, EADS, on “Development of IEEE and their respective research the delegates and highlighted the high performance and compact mm- area of interests. activities of the Branch. wave components and MCMs using There were oral and poster pre- Advanced multilayer Thick-film SIP Ali Rezazadeh sentations. Professor Liou delivered Technology.” Professor Ali Rezazadeh UKRI Chapter Chair a talk on “Outlook and Challenges in also delivered a talk on “Design and University of Manchester Electrostatic Discharge (ESD) Protec- Development of Compact 3D MMICs.” Manchester, UK

rEPort on thE IEEE EDS mInI-ColloQuIum hElD In PrEtorIa, South afrICa

The first ever IEEE EDS Mini-Col- EDS Distinguished Lecturers among en. He was followed by Prof. Lorenzo loquium on the continent of Af- the speakers. Pavesi from the Nanoscience Labo- rica was recently held in Pretoria, The first speaker, Prof. Cor Claeys, ratory at the Department of Physics, South Africa, September 23, 2011, Director Advanced Semiconduc- University of Trento, Trento, Italy. His at the Carl and Emily Fuchs Insti- tor Technologies, IMEC, Leuven, talk on “New developments in non- tute for Microelectronics (CEFIM) Belgium, gave a talk on “Emerging linear silicon photonics”, demon- on the campus of the University of CMOS devices: Trends and challeng- strated the use of nanocrystals and Pretoria. This historical event was es,” discussing the future downscal- strain engineering to enable novel attended by a total of 42 students, ing of devices to cope with the ITRS photonic functionalities in silicon. engineers and scientists. It was in- roadmap and the many technological After a welcome tea break, two deed a very special MQ, with three challenges and approaches to be tak- speakers from the USA presented

20 IEEE Electron Devices Society Newsletter m January 2012 Attendees at the EDS MQ in Pretoria, South Africa, September 23, 2011 their papers. The first, Prof. Juin J. Liou, from the Department of Elec- trical and Computer Engineering at the University of Central Florida, Orlando, Florida, USA, presented a talk on “Challenges of electrostatic discharge (ESD) protection in sili- con nanowire technology.” He gave an overview on ESD sources, mod- els, protection schemes and testing was given, followed by a discussion of ESD characteristics, robustness and challenges of the emerging Si nanowire technology. Prof. Liou was followed by Dr. Jessica E. Koehne from the Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California, USA, who present- Distinguished Lecturers of the EDS MQ in Pretoria, South Africa, September 23, 2011. Front row, ed her paper on “Nanomaterials for from left to right: Dr. Jessica E. Koehne, Prof. F. Danie Auret, Prof. Monuko du Plessis (EDS DL) electronics and bioelectronics.” Dr. Back row, from left to right: Prof. Somnath Bhattacharrya, Prof. Juin J. Liou (EDS DL), Koehne gave an overview of CVD and Prof. Cor Claeys (EDS DL), Prof. Philippe M. Fauchet, Prof. Lorenzo Pavesi PECVD material growth, as well as the development of chemical sensors, bi- osensors, energy storage devices and Johannesburg, South Africa, gave level transient spectroscopy (DLTS) novel memory architectures. a talk on the topic of “Quantum and high resolution (Laplace) DLTS. After an enjoyable lunch, two fur- transport in low-dimensional car- Last but not least, Prof. Monuko du ther papers were presented, the first bon superstructures.” In his talk, Plessis from the Department of Elec- by Prof. Philippe M. Fauchet from he investigated the characteristics trical, Electronic and Computer Engi- the Department of Electrical and of nano-electronic devices based neering at the University of Pretoria, Computer Engineering, University on artificially-grown multi-layers of Pretoria, South Africa, discussed of Rochester, Rochester, New York, ultra-thin diamond-like amorphous “Nano explosive devices in silicon USA, on “Optical signal processing carbon films. technology.” In his talk the explosive in SOI chips using photonic crys- Another short tea break was fol- properties of porous-silicon, impreg- tals.” Prof. Fauchet described the de- lowed by two South African presen- nated with an oxidant, were present- sign and performance of low-power, tations. Prof. F. Danie Auret from the ed and future applications for this all-silicon or hybrid E-O modulators Department of Physics at the Uni- new technology were proposed. to be used for on-chip optical inter- versity of Pretoria, Pretoria, South connects, as well as biosensors ca- Africa, spoke on “Electrical charac- Monuko du Plessis pable of detecting a single virus. A terization of irradiation and process EDS/PHO/CAS South local speaker, Prof. Somnath Bhat- induced defects in semiconductors,” Africa Chapter Chair tacharrya from the School of Phys- wherein he discussed the electrical University of Pretoria ics, University of the Witwatersrand, characterization of defects by deep Pretoria, South Africa

January 2012 m IEEE Electron Devices Society Newsletter 21 EDS PrESIDEnt’S VISIt markS thE offICIal launCh of StanforD’S StuDEnt ChaPtEr

The IEEE Stanford Student then fielded questions from Branch was honored to wel- the audience on current chal- come EDS President Renuka lenges for communications P. Jindal for a day-long visit to systems, the future of optical the campus, October 21, 2011. communications on-chip, and The visit marked the official diverse other topics. launch of Stanford’s EDS Stu- Professor Jindal also host- dent Chapter, a joint venture ed a lunchtime talk during between the electrical engi- which he described how the neering and materials science EDS is delivering value to its communities at the university. members (particularly stu- “Here at Stanford,” said Vi- dent members) through inno- jay Narasimhan, the chapter vative services like QuestEDS chair, “people are exploring (the online forum to confer new materials, new device with experts across the world) architectures, and new mod- and copy editing for publica- eling techniques for electron tions submitted to TED. He Dr. Jeongwon Park, from Applied Materials and Renuka Jindal, EDS devices across many depart- also shared his insights on President with Vijay Narasimhan, the new ED Stanford Student ments, often in collaborative Branch Chapter Chair technology and career transi- teams.” Narasimhan himself tions through the unique lens researches a new type of solar energy students, faculty, and members of of someone who has worked both at conversion based on thermionic emit- the public entitled “From millibits Bell Labs and then in an academic ters. He is a PhD Student in Materials to Terabits per Second and Beyond: institution. Later, students interacted Science with a strong background in Over 60 years of Innovation,” dur- with Professor Jindal, other Stan- Computer Engineering and Nanotech- ing which he discussed the very ford faculty studying electron de- nology and works with a team of Phys- colorful history of the transistor, the vices, and each other, forming new icists and Electrical Engineers. “More- laser, and the various other parts of connections over giga-bites of pizza over, for many classes of devices, like light-wave communication systems. (perhaps the quickest way of all to solar cells, sensors, and optoelectron- The audience was entertained by get people communicating). ics, there is widespread interest across his focus on the human elements of In the coming months, the Stan- the broader Stanford community, par- this story, such as Shannon’s uni- ford Chapter will be working hard with ticularly those studying energy, policy, cycle rides through Bell Labs. Jindal the IEEE Student Branch and the MRS and commerce.” Student Chapter to host events Stanford’s EDS events are that bring distinguished lec- therefore geared to a broad turers, champions of industry, audience. Last year, they held and Stanford alumni back to their first unofficial event, in- campus. With a team of en- viting Stanford alumni from thusiastic student leaders and Electrical Engineering and wise advisors, such as EDS Ad- Materials Science from dif- Com veteran Professor Philip ferent eras (2000s, 1990s and Wong and Visiting Professor 1970s) to take part in a panel Tian-Ling Ren, the chapter is in to discuss the changing land- a great position to expand the scape of the electron device EDS community with another industry over the years and home in the Santa Clara Valley. the many career options available to students after Vijay Narasimhan they graduate from Stanford. ED Stanford University At the EDS launch event, Student Branch Professor Jindal gave an EDS President, Renuka Jindal (center) and students at the Chapter Chair entertaining talk to Stanford lunchtime talk Palo Alto, CA, USA

22 IEEE Electron Devices Society Newsletter m January 2012 rEPort on thE IEEE EDS mInI-ColloQuIum hElD In tokYo, JaPan

The first IEEE EDS MQ (Mini-Col- vanced hybrid nano-devices, giv- (Hiqscreen), Dr. Eric Ollier (CEA- loquium) in Japan since the Great en by the following distinguished LETI; substituted by Dr. Simon De- East Japan Earthquake and Tsunami speakers: Dr. Tak Ning (IBM), Dr. Akira leonibus), and Dr. Cornel Cobianu Disaster on March 11, 2011, and Nishiyama (Toshiba), Dr. Carlos Diaz (Honeywell). The lecturers were the subsequent Fukushima Nuclear (TSMC), Akira Nishiyama (Toshiba), followed by a 45 minute poster ses- Accident, was held at Tokyo Tech Prof. Dim-Lee Kwong (IME), Dr. Si- sion by the posters of the previous Front (or Koramae Kaikan in Japa- mon Deleonibus (LETI), Prof. Cor day’s schedule. nese), Tokyo, Japan, October 4–5, Claeys (IMEC), Dr. Hiromichi Ohashi Finally, the MQ was closed with 2011. Two hundred people from 10 (AIST), Dr. Hitoshi Wakabayashi a panel discussion on Advanced Hy- countries assembled to encourage (Sony), Prof. Ken Uchida (TIT), and brid Nano Devices, and the presenta- a quick recovery for the Japanese Prof. Hiroshi Iwai (TIT). tion of best poster awards. This was electron devices community. An entire hour was allocated to really a very good opportunity for the The MQ named the “G-COE PICE nearly 60 presentations, given by foreign scientists and engineers to International Symposium and IEEE young researchers and students, visit Japan after the disaster to com- EDS Mini-colloquium on Advanced which provided a good opportunity municate with the Japanese electron

Participants of the IEEE EDS Mini-Colloquium Held in Japan, with IEEE EDS banner

Hybrid Nano Devices,” was organized for them to interact with the world- devices community and encourage with the support of the IEEE Electron famous distinguished lecturers. them, especially the young research- Devices Society, Tokyo Institute of The second day of the MQ fea- ers and students in attendance. Technology (TIT) and the European tured lectures given by: Prof. Hi- FP7 NEMSIC Project. The MQ began royuki Fujita (Univ. Tokyo), Dr. Joost Hiroshi Iwai on October 4th, with a welcome by Van Beek (NXP), Prof. Kazuya Masu IEEE Division I Director TIT President, Prof. K. Iga, followed (TIT), Prof. William Milne (Cam- Tokyo Institute of Technology by a speech by the ED Japan Chapter bridge Univ.), Prof. Shunri Oda Yokohama, Japan Chair, Dr. S. Kimura, who expressed (TIT), Prof. Adrian Prof. Ionescu appreciation for the great support giv- (EPFL), Prof. Hiroshi Mizuta (South- Shin’ichiro Kimura en to Japan from all over the world. ampton Univ.), Dr. Julia Pettine ED Japan Chapter Chair Following the opening ceremony (IMEC-NL), Dr. Sorin Cotofana (Delft Tohoku University there were lectures on future ad- Univ. Tech.), Dr. Daniel Bertrand Sendai, Japan

January 2012 m IEEE Electron Devices Society Newsletter 23 rEPort on thE EDS mInI-ColloQuIum hElD In kaohSIung,

The ED Tainan Chapter organized a Mini-Colloquium at I-Shou Univer- sity in Kaohsiung, Taiwan, October 14, 2011. The MQ focused on “The New Concept for Advanced Elec- tronic Device.” The following six speakers were invited to give EDS Distinguished Lectures: Prof. Ching-Ting Lee of National Cheng-Kung University,

Taiwan; Prof. J.-Juin Liou of Univer- From left to right: Prof. Jenn-Gwo Hwu (MQ speaker), Prof. Hei Wong (MQ speaker), Ming-Dou sity of Central Florida, USA; Prof. Ker (MQ. Speaker), Prof. Ching-Ting Lee (MQ speaker), Prof. Chii-Maw Uang, Prof. J.-Juin Liou Ming-Dou Ker of I-Shou University, (MQ speaker), Prof. Wen-Kuna Yeh (ED Tainan Chapter Chair), Prof. Shih-Chiang Lin, Prof. Taiwan; Prof. Jenn-Gwo Hwu of Na- Yu-Jung Huang, and Prof. Po-Ying Chen tional Taiwan University, Taiwan; Prof. Navab Singh, Institute of Mi- Wang of National Cheng-Kung Uni- croelectronics, Singapore (by web- versity, Taiwan. Wen-Kuan Yeh cam video conferencing); Prof. Hei Approximately 120 students and ED Tainan Chair Wong of City University of Hong professors from local universities at- National University of Kaohsiung Kong, Hong Kong; and Yeong-Her tended the mini-colloquium. Kaohsiung, Taiwan

EDS DIStInguIShED lECturEr anD mInI-ColloQuIa ProgramS

The EDS Distinguished Lecturer colloquia (MQ) to remote ar- (DL) Program exists for the pur- eas. This concept generally pose of providing EDS Chapters involves the sending of about with a list of quality lecturers 2 or more DLs to travel to a who can potentially give talks at region/chapter and present local chapter meetings. the latest developments in a To arrange for a lecture, EDS particular field. The chapters/ chapters should visit the EDS regions would be responsible website at http://eds.ieee.org/ for handling all the arrange- distinguished-lecturers.html to ments of the event and only view the listing of EDS DLs and con- minimize travel costs by combining minimal financial support would be tact the EDS DL directly. A general their visits with planned business required of EDS and could be cov- guideline for the visit, but not the ab- trips, EDS will help subsidize lecturer ered by the MQ Program budget solute rule, is that the lecturer should travel in cases where few/no lectur- upon request. be able to include the meeting site ers will be visiting an area and/or For more information on the DL with an already planned travel sched- a chapter cannot pay for all the ex- or MQ Programs, please visit the ule at a small incremental cost to the penses for a lecturer trip. EDS website or contact Laura Riello travel plan. Although the concept of EDS is also encouraging Dis- of the EDS Executive Office (l.riello@ the program is to have the lecturers tinguished Lecturer clusters/mini- ieee.org).

24 IEEE Electron Devices Society Newsletter m January 2012 r EgIonal anD C haPtEr n EWS

uSa, CanaDa of concepts of the universe, culminat- ing in the results of the latest research & latIn amErICa on the cosmic microwave background (rEgIonS 1–6, radiation. Engineers and students from vari- 7 & 9) ous organizations attended, hosted by the several IEEE members among the company’s employees. Joe’s pre- sentation generated much interest ED Mid‑Hudson Valley and discussion and continued well –by Fernando Guarín into the evening, ending when the at- Wind Turbine, Great Lakes Science Center, On Friday June 17, 2011, the ED tendees were offered a tour of Com- Cleveland, Ohio, USA Mid-Hudson Valley Chapter in New punetics’ manufacturing operations. York, hosted Professor Dr. Souvik In October 2011, the Chapter will the most promising energy technol- Mahapatra from the Department of host EDS Distinguished Lecturer Dr. ogies; and planners and representa- Electrical Engineering, IIT Bombay. Vijay Arora. November 2011 will see tives desiring background on energy Dr. Mahapatra delivered a talk en- a pair of short seminars in one eve- alternatives impacting public policy. titled, “Characterization and Model- ning, put on by members. One will EnergyTech2011 (www.energy- ing of NBTI Stress, Recovery, Materi- review methods of transformer cool- tech2011.org) was launched in May, al Dependence and AC Degradation ing, the other will outline recent de- 2011, on the campus of Case West- Using R-D Framework,” explaining velopments in advanced electronic ern Reserve University. Keynote talks how the empirical signatures of packaging. were offered from representatives NBTI degradation are remarkably of DOE, ARPA-E, NSF and Draper consistent across different industry EnergyTech2012 Labs. EnergyTech2011 attracted in- and academic sources. –by Maximilian C. Scardelletti ternational contributions both in aca- On Wednesday June 29, 2011, The IEEE Electron Devices Soci- demic/published-paper tracks and Professor Samuel Sia from the Bio- ety will be a technical co-sponsor in a parallel industry track. Given the medical Engineering Department of EnergyTech2012 (www.ener- very positive response to the indus- at Columbia University visited our gytech2012.org), following on the trial presentations, this aspect will be Chapter and delivered an engaging successful launch of IEEE Energy- expanded for 2012. talk titled “Microfluidics for global Tech2011. This new conference, also Electron-device related contribu- health diagnostics.” He showed how co-sponsored by the IEEE Power tions to EnergyTech2011 included Lab-on-a-chip (LOC) devices have a and Energy Society, the Great Lakes components and techniques for grid tremendous potential for improving Energy Institute, IEEE Region 2, and tie-in, high-power AC energy con- the health of people in developing Case Western Reserve University, version, DC-DC conversion, high- countries by providing immediate surveys promising technologies to power control interfaces, smart-grid diagnosis in the field. address the growing demand for and micro-grid interfaces, aging of sustainable energy. It brings togeth- power electronics, and charging sys- ED Pittsburgh er experts in diverse areas to review tems. Electronic devices will clearly –by Louis Hart and explore technologies that can of- play a crucial role in future energy The Pittsburgh Chapter of the Electron fer significant contributions towards solutions, and EDS-related papers Devices Society held a meeting the addressing this global challenge. are sought for EnergyTech2012. The evening of July 26th at Compunetics’ Attendees for whom this confer- deadline for paper submissions to facility in Monroeville, Pennsylvania, ence is intended include: power and EnergyTech2012 is January 15, 2012. USA. Astronomer Dr. Joe Busche energy researchers and practitio- ~Fernando Guarin, Editor of the University of Pittsburgh and ners; engineers entering energy re- Wheeling Jesuit University gave a pre- search, desiring an overview of the ED Boise sentation on “The Cosmic Microwave current technological challenges in –by Shyam Surthi Background: the Bedrock of Modern power and energy; research direc- The 2012 IEEE Workshop on Micro- Cosmology.” He described the history tors and investors seeking clarity of electronics and Electron Devices

January 2012 m IEEE Electron Devices Society Newsletter 25 (WMED-2012) will be held on April 20, 2012, at the Boise State Univer- sity Student Union Building. This workshop provides a forum for re- viewing and discussing all aspects of microelectronics including semi- conductor processing, electrical characterization, advanced design techniques, and new device tech- nologies. The workshop consists of invited talks, contributed papers, in- depth tutorials, as well as a poster AdCom members of the IEEE ED SCV Chapter, along with the two award recipients and their session in the afternoon. With its family members growing attendance, regional im- pact, and history of premier invited ceived the awards in the presence of speakers, this year’s workshop is an their family and friends. excellent opportunity for students The ED SCV Chapter envisions and professionals to share their that the scholarships awarded to work with technologists and engi- these bright young minds will pro- neers from all around the region. vide an inspiring example to many The keynote speech at WMED- high school students to pursue their 2012 will be given by Prof. Rahul careers in Math, Science, and Engi- Sarpeshkar from MIT, on the topic neering, which are imperative for of bioelectronics. In the past, we Raymond Liu receiving an electronic kit from the growth and prosperity of the Na- have had the privilege of hosting the Chapter Chair, Reza Arghavani tion and Mankind. several distinguished speakers like ~Adam Conway, Editor Dr. Han Stork (Texas Instruments), from these monetary awards, the re- Dr. Al Fazio (Intel Corporation), and cipient will also be provided an elec- Prof. Mark Lundstrom (IEEE Fellow, trical kit designed to inspire students EuroPE, Purdue University). IEEE-formatted and provide hands on learning expe- mIDDlE EaSt manuscripts can be submitted to rience in electronics. After receiving the WMED Publications Chair, Suraj the nominations, the students are & afrICa Mathew ([email protected], asked to list their achievements in (rEgIon 8) +1 208-363-1633). The manuscript mathematics, science, and engineer- submission deadline is January 27, ing along with an essay of person(s) 2012. whose contributions in science and ED Poland For more information, please visit engineering tremendously impacted –by Zygmunt Ciota the workshop website: http://www. the Society. The ED Poland Chapter is a co-organiz- ewh.ieee.org/r6/boise/wmed2012/ The first scholarship was award- er of the 5th MICROWAVE and RADAR WMED2012.html. ed in 2011. This year’s recipients WEEK – MRW-2012, which will be held submitted an essay on “Bill Gates: May 21–26, 2012, in Warsaw, Poland. ED Santa Clara Valley 11 things they don’t teach in school” The event is the continuation of the se- –by Sachin Sonkusale and “Andy Grove: How to make an ries of very successful conferences in The IEEE ED Santa Clara Valley (SCV) American Job before it’s too late,” Warsaw (2004), Krakow (2006), Wro- Chapter created a high school schol- provided their understanding and claw (2008) and Vilnius (2010) and the arship program to motivate students opinions on the topics. following three conferences will take in pursuing studies in mathematics, The 2011 award winners are: (1) part in this scientific week: science, and engineering. Raymond Liu, Leland High School, • 19th International Conference on The scholarship includes a $500 San Jose, California, USA; and (2) Microwaves, Radar and Wireless cash award to the best candidate Brian Tran, Adrian C. Wilcox High Communications – MIKON 2012, selected from the top candidates School, Santa Clara, California, May 21–23 nominated by each principal of local USA. The awards were presented by • 13th International Radar Sympo- high schools. In addition, the top five the EDS SCV Chair, Dr. Reza Argha- sium – IRS 2012, May 23–25 runner-up candidates receive a cash vani on April 5, 2011, at the monthly • 19th International Conference award of $100 each as well. Apart chapter seminar. The winners re- “Mixed Design of Integrated

26 IEEE Electron Devices Society Newsletter m January 2012 Circuits and Systems” MIXDES 2012, May 24–26 Also, during MRW, the meet- ings of the IEEE ED Poland Section and the Microelectronics Section of Electronics and Telecommunication Committee of the Polish Academy of Sciences will take place. The papers for all the conferences can be submitted until January 15, 2012. The detailed information about this joint event can be found at the web site http://www.mrw-2012.pl. ~Zygmunt Ciota, Editor

AP/CPMT/ED/MTT/NPS Saratov –by Nikita M. Ryskin

NNNPh’2011 Participants of the 2011 Saratov Chapter Workshop On September 13–15, 2011, the 6th Conference for young scientists “Na- published and distributed at the con- year since 1995 and it was very help- noelectronics, Nanophotonics and ference. More information can be ful for the popularization of IEEE and Nonlinear Physics” (NNNPh’11) was found on the conference website at recruiting new members. Thus, since held in Saratov. NNNPh is the annual http://nnnph06.fatal.ru . 2011 the Chapter decided to hold the conference hosted by the Saratov The AP/CPMT/ED/MTT/NPS Sara- Workshop twice a year. The first 2011 Branch of the Institute of Radio En- tov Chapter is a technical co-spon- Workshop was hosted by Saratov gineering and Electronics, Russian sor of the NNNPh, with many IEEE State Technical University in May. Academy of Science (IRE RAS) since members actively participating as the At the beginning of the Workshop, 2006. This year’s conference program conference organizers. Dr. Irene E. the 2011 Activity report was pre- included 3 Plenary Lectures present- Kuznetsova chaired the Local Techni- sented by Chapter Chair Prof. N.M. ed by invited speakers, 63 talks and cal Committee, and four IEEE mem- Ryskin. The technical program in- 28 posters presented by young scien- bers served as members of the Pro- cluded 7 talks. Twelve IEEE members tists and students. The presentations gram Committee. and 5 guests attended the Workshop. were divided into 4 sessions: “Micro The Vice-Chair of the IEEE Rus- After the workshop, a reception for and nanoelectronics, nanomaterials sian Section, Prof. S.A. Nikitov (IRE IEEE members and guests was held. and nanostructures,” “Optics and RAS, Moscow) served as the Confer- ~Tomislav Suligoj, Editor nanophotonics,” “Acousto and mag- ence Chair. During the conference, netoelectronics,” and “Nonlinear he met with Saratov Chapter officers physics.” Over 100 participants from and discussed current activities and aSIa & PaCIfIC Russia, Poland, Germany and Japan future plans. (rEgIon 10) attended. The book of abstracts was Chapter Workshop ED Taipei “Electromagnetics of –by Steve Chung Microwaves, Terahertz and The ED Taipei Chapter held three very Optical Waves” and IEEE Day successful events during the third Celebration quarter of 2011, which were attended On Thursday, October 6, the Saratov/ by students and professors from lo- Penza IEEE Chapter celebrated IEEE cal universities, as well as profession- Day by holding its traditional Work- als from surrounding science parks. shop “Electromagnetics of Micro- The first was an invited talk Conference Chairman, Prof. Sergey A. Nikitov waves, Terahertz and Optical Waves” on August 5th by Dr. Yu-Ming Lin and Local Technical Committee Chair, Dr. Irene in Saratov State University. The from IBM Yorktown Heights, on E. Kuznetsova at the Opening Ceremony Workshop has been organized every “ High-Frequency Graphene Devices

January 2012 m IEEE Electron Devices Society Newsletter 27 2011. Prof. H.-S. Philip Wong of Stan- ford University was invited to deliver a lecture entitled “Emerging Memo- ry Device – Phase Change Memory (PCM) and Resistive Switching Mem- ory (RRAM).” In his DL, he gave an overview of the recent research work in his group on PCM and RRAM, which are focused on understanding the device physics of the memory (left) ED Taipei August 5th invited talk- (1st row from the right) Steve Chung (ED Taipei Chapter devices and exploring the scalability Chair), Yu-Ming Lin (speaker) and participating professors and students of the memory devices at the single- digit nm feature size regime. There The last event on August 24th were about 70 attendees at the talk was a DL given by Prof. Kei May Lau and afterwards they enjoyed more from Hong Hong University of Sci- detailed face-to-face discussions ence and Technology, on “III-Nitride with Prof. Wong who shared his re- Devices on Silicon Substrates by search experience. The ED Peking MOCVD.” III-nitrides have estab- University Chapter also held many lished their niches in optoelectronic, other lectures and the detailed infor- high-power, and high-frequency ap- mation can be kindly found on the plications that cannot be matched by chapter’s website http://www.ime.

August 24th DL talk, Mei Kay Lau (speaker) Si electronics. Since silicon has been pku.edu.cn/soi/edpku.html. and will remain the workhorse in the and Circuits,” in which he presented semiconductor industry, to further 2012 VLSI‑TSA/DAT recent progress on high-frequency improve the performance and ex- graphene devices and integrated cir- tend the functionalities of Si-based The Symposia Highlight New cuits. Two types of graphene synthe- electronics, the best approach is to Memory Systems in their 2012 sized by different approaches were combine these well-developed ma- Programs demonstrated for high-frequency terials and related technologies. This The 2012 International Sympo- devices and circuits. By optimizing talk attracted more than 100 partici- sium on VLSI Technology, Systems the device fabrication and structure, pants on the topic of integration of and Applications (2012 VLSI-TSA) and a cut-off frequency of above 100 GHz III-nitride devices on a Si platform. the 2012 International Symposium was achieved for both grapheme on VLSI Design, Automation and Test structures. Graphene circuit operates ED Peking University (2012 VLSI-DAT) will take place on as a broadband mixer at 10 GHz was –by Runsheng Wang April 23 to 25, 2012 at the Ambassa- also demonstrated. Dr. Yu-Ming’s The ED Peking University (PKU) dor Hotel in Hsinchu, Taiwan. In re- talk was attended by 50 participants. Student Chapter held a DL, July 18, sponse to the growing importance of Invited Distinguished Lecturer, Prof. Vijay Arora from Wilkes Univer- sity, gave a talk entitled, “Quantum Nanoengineering of Semiconductor Devices and Circuits.” A review of the physics behind the breakdown of Ohm’s law and existence of quantum effects in engineering low-dimen- sional nanoelectronic circuits was given. Prof. Arora explained how the voltage and current division laws, the transient phenomenon, and sig- nal processing are affected in micro/ nano-regime opening challenges and opportunities for tomorrow’s physicists and nano-engineers. His Prof. Philip Wong (middle, front row) pictured with Prof. Ru Huang (left, front row), the chapter talk was attended by 30 participants. advisor and other members of the ED Peking University Student Chapter

28 IEEE Electron Devices Society Newsletter m January 2012 org.tw (for VLSI-TSA) or http://vlsi- dat.itri.org.tw (for VLSI-DAT). We look forward to seeing you, and hope that you will enjoy an ex- cellent meeting and warm hospital- ity at the conference. Should you have any further questions about registration, please contact the con- ference registrar, Ms. Yvonne Chen at +886-3-5913003 or e-mail to Yvon- [email protected] for assistance. Nearly 450 attendees attended the Opening and listened to the keynote speech by Dr. Kelin J. Kuhn, from Intel, USA Clara Wu Symposium Secretariat of VLSI-TSA heterogeneous integration for both attendees in semiconductor manu- VLSI design and technologies, the facturing and IC design, respectively: Elodie Ho two symposia will organize a Joint Symposium Secretariat of VLSI-DAT Plenary Session and a Joint Special VLSI Technology, Systems and ~Mansun Chan, Editor Session on various emerging topics Applications in the semiconductor industry. • 2 TSA plenary speakers from ac- ED Malaysia ademic (Prof. Chenming Hu from –by P. Susthitha Menon and Ibrahim Special Joint Session UC Berkeley) and industrial leaders Ahmad Considering that memory is a par- • Special session on SOC/Mobile The ED Malaysia Chapter organized a ticular field that generates interre- Technology and Transition Tech- technical review meeting at Le Meri- lationship between the technology nology dien Hotel, Kota Kinabalu, Sabah on and design communities, a joint- • Invited talks on FEOL, Memory, the June 1, 2011, in lieu of the IEEE invited session with topics of new BEOL, Advanced CMOS Regional Conference on Micro and memory technology, architecture • Two parallel in-depth short cours- Nanoelectronics (IEEE-RSM2011) to design, and system perspective, is es on Embedded Memory and be held on the September 27–30, scheduled on the second day of the Power Devices 2011, and co-organized by the ED conference. Malaysia Chapter, the Institute of Mi- Named as New Memory Sys- VLSI Design, Automation croengineering and Nanoelectron- tems, the 2012 VLSI-TSA/DAT joint and Test ics (IMEN), Universiti Kebangsaan session features four distinguished • 2 DAT plenary speakers from aca- Malaysia (UKM) and Universiti Ma- invited speakers from the US and demic and industrial leaders laysia Sabah (UMS). After the tech- Europe, who will discuss various • Three highlight topics on Smart nical review meeting, a membership aspects of this topic from tech- Handheld Platform, Green Elec- drive seminar and a technical talk on nology perspective to future stor- tronics, and Emerging Design ‘Silicon Photonics’ was given by Dr. age class memory (SCM), and 3D Practices. Sahbudin Shaari, past-chair of the processor-memory architecture by • Industrial sessions with up-to- ED Malaysia Chapter, at the Univers- key industrial players and research date research results from lead- iti Malaysia Sabah (UMS). More than experts. Following this joint spe- ing companies. 20 participants, mainly faculty and cial session, the symposia plan the Sponsored by Industrial Technol- students, attended the technical talk. first Joint Panel Discussion on the ogy Research Institute (ITRI) and di- A professional short course on same topic. Dr. Nicky Lu, Chairman vided into separate annual symposia Taguchi Method for Product and Pro- & CEO of Etron Corp., is invited to since 2006, VLSI-TSA and VLSI-DAT cess Optimization was co-organized be the moderator and a deeper dis- are proud to create a platform for by the IEEE ED Malaysia Chapter cussion among the speakers and technical exchanges and commu- and the Institute of Micro Engineer- the delegates will be expected. nications between experts from all ing and Nanoelectronics (IMEN), over the world. Universiti Kebangsaan Malaysia Featured Programs A detailed conference agenda (UKM), June, 20–23, 2011, at Puri In addition to a Joint Plenary Ses- will be released in January 2012; Pujangga UKM. A total of 25 partici- sion, a Joint Special Session and early bird registration will open at pants both from academia and local 50–70 contributed papers, each sym- the same time. Please visit the con- industry attended the short course, posium will address the interests of ference websites at http://vlsitsa.itri. which was delivered by Dr. Prakash

January 2012 m IEEE Electron Devices Society Newsletter 29 with Prof. Lok Narayan Jha and Prof. Devendra Raj Mishra. The speakers highlighted the science policy of Nepal and the role and relevance of the IEEE EDS Chapter in Nepal. The second session consisted of oral presentations and poster displays. Scientists from many different insti- tutions and universities in Nepal par- ticipated in this interesting session. Attendees of the Technical Talk on Silicon Photonics at Universiti Malaysia Sabah The full-day event attracted a total of 122 participants, including many IEEE members. On September 24, 2011, the Semi- nar on ”Physics of Materials for Devices and Natural Sciences,” was organized by the Chapter in Bharat- pur, Chitwan, Nepal. The program with an IEEE Distinguished Lecture by Prof. Chandan Sarkar, also consisted of 11 contributed papers. Profes- sors Sitaram Prasad Byahut, Bhadra Pokharel, Pradeep Kumar Bhattarai and Shankar Shrestha, gave lectures on properties and applications of ad- Participants of the Short Course on Taguchi Method organized by the ED Malaysia Chapter with vanced materials. Scientists and en- course instructor Prof Apte (second from right) gineers from various institutions and universities in Nepal participated in R. Apte from the Indian Institute of Technology (IIT) Bombay. The course objective was to explain the basic philosophy of Taguchi method, principles of quality engineering, its applications and economic benefits, its relevance to the Malaysian indus- try and its successful application in India through the presentation of case studies. Upon completion of Scientific Session organized by the ED Nepal Chapter the course, all participants received a certificate of participation from the IEEE ED Malaysia Chapter.

ED Nepal –by Bhadra Pokheral A one-day IEEE Seminar named Sci- entific Session, was organized by the ED Nepal Chapter, July 23, 2011. The seminar program consisted of two sessions, with 6 oral presentations and 5 posters. The first session was inaugurated by Chief Guest, Educa- tion Minister of Nepal, Mr. Gangalal Tuladhar and was addressed by the President of the Nepal Physical So- ciety, Prof. Shekhar Gurung, along Participants and speakers of the International Seminar organized by the ED Nepal Chapter

30 IEEE Electron Devices Society Newsletter H January 2012 the program, which registered 104 spite of a strong typhoon approach- participants including IEEE members. ing. The schedule was not changed ~M.K. Radhakrishnan, Editor because there were already 20 people waiting for his lecture, regardless of ED Japan the strong rain. The lecture was use- –by Shin’ichiro Kimura ful for understanding the current sta- Dr. Xing Zhou, Chair, IEEE EDS SRC- tus of the gate oxide reliability. Sever- AP (Region 10) and also a professor al discussions were held between the of Nanyang Technological Univer- lecturer and the audience, regarding Prof. Oda lecturing on Silicon quantum dots sity, Singapore, visited Tokyo Insti- the reliability of ultra-thin oxides. tute of Technology, and gave a DL on August 26, 2011. His talk entitled ED Kansai “Unification of MOS Compact Mod- –by Michinori Nishihara els with the Unified Regional Model- The ED Kansai Chapter held a ing Approach,” was very instructive Technical Meeting on July 14, 2011 at and useful for the engineers and stu- Centenary Memorial Hall, Kansai Uni- dents. There were participants from versity, Osaka, Japan, by inviting two industry such as Sony, with an active prestigious lecturers. The first speak- Q&A and networking session taking er was Prof. Shunri Oda, an IEEE Dis- place after the lecture. tinguished Lecturer, from Tokyo In- Prof. Omura explaining his idea for an Alcohol detector The ED Japan Chapter also orga- stitute of Technology. The title of his nized another DL at Tokyo Institute of lecture was “Silicon Quantum Dots: Prof. Oda talked about size con- Technology, entitled “Failure analysis The Future of Electronics and Pho- trol technique of Si nano dots down of MOS devices using spatial statis- tonics,” with the following topics: 1) to 8nm within 1 nm variation as well tics,” given by Prof. Enrique Miranda, Activity of Silicon Nanodevice Labo- as surface modification process for Universitat Autònoma de Barcelona, ratory, 2) Fabrications and assembly better assembly of the nano dots. on the afternoon of September 21, of Si quantum dots, 3) Single electron He also discussed electron transport 2011. The event was held even in transport, and 4) Si photonics. property of quantum dot transistors indicating its opportunity to be used as Quantum Information Devices. Lastly he pointed out the capability of Si nano dots as light emitting devices suggesting unique applications of quantum dots with 5 nm diameter or less. It was a good review of research status of quantum dot devices. The second speaker was Prof. Ya- suhisa Omura of Kansai University and the title of his lecture was “De- velopment of in-car Alcohol Sensor to prevent DWI”. While QCM (Quartz Prof. Xing Zhou (sitting, center first row) Crystal Microbalance) has been widely used as an alcohol detector, it is difficult to manage response vari- ability among people. Prof. Omura used FFT spectrum of photoplethys- mographic signals to clearly distin- guish a person under alcoholic influ- ence. Although there is some work to be done it looks promising as a device for an in-car alcohol detector. The ED Kansai Chapter will con- tinue to have technical meetings like this every year. Prof. Enrique Miranda (sitting, center first row) ~Kazuo Tsutsui, Editor

January 2012 m IEEE Electron Devices Society Newsletter 31 IEEE mEntorIng ConnECtIon™ Program SEEkS mEmbErS to mEntor Young ProfESSIonalS

One of the top IEEE Societies with young professional members includes the IEEE Electron Devices Society. Many of these members would appreciate the opportunity to have an “online” mentor to help guide them in their career planning and professional development. Mentor participation in the IEEE Mentor- ing Connection Program is open to all IEEE members above the grade of Student Member. Gary Hinkle, a mentor in the program, says “Helping young engineers develop in their ca- reers is very rewarding. Working with some of these individuals has proven to be quite a chal- lenge, because of the diversity among those seek- ing mentors. I’m glad to be contributing to this program.”

The program enables the mentee to select their mentoring partner online from a list of individuals who have volunteered to serve as mentors. After mentors are identified as a potential match, they are contacted and asked to begin establishing a relationship. Interested members can visit http:// www.ieee.org/web/membership/mentoring/index.html for information on the roles and respon- sibilities of each mentoring partner, including additional program information and an FAQ page. Potential mentors are asked to review the time and effort commitment to the program neces- sary to ensure a successful mentoring partnership. To access the IEEE Mentoring Connection site, please go to http://www.mentoringconnection.com and use the Group ID “IEEE2006” to enter. Once you enter the site, you will need to set your own user id and password.

If you have any questions, please contact the IEEE Mentoring Program Coordinator at [email protected].

32 IEEE Electron Devices Society Newsletter m January 2012 EDS mEEtIngS CalEnDar

(aS of 11 n oVEmbEr 2011)

THE COMPLETE EDS CALENDAR CAN BE FOUND AT OUR WEB SITE: HTTP://EDS.IEEE.ORG/EDS-MEETINGS- CALENDARS.HTML

January 5 - 7, 2012, @ International Con- ghu, E-Mail: [email protected], Deadline: June 3 - 7, 2012, @ International Sympo- ference on Enabling Science and Nano- 1/27/12, www: http://www.ewh.ieee.org/r6/ sium on Power Semiconductor Devices technology (ESciNano), Location: Persada boise/wmed2012/WMED2012.html & Integrated Circuits, Location: Old Sint Jan, Johor International Convention Centre, Johor Conference Center, Bruges, Belgium, Contact: Bahru, Malaysia, Contact: Secretariat ESciNano April 23 - 25, 2012, T, International Sympo- Sabien De Hanscutter, E-Mail: sabien@ 2012, E-Mail: [email protected], Deadline: sium on VLSI Design, Automation and momentum-pco.be, Deadline: 10/17/11, www: 7/1/11, www: http://www.fke.utm.my/mine/ Test, Location: Ambassador Hotel, Hsinchu, http://www.ispsd2012.com escinano2012/ Taiwan, Contact: Elodie Ho, E-Mail: elodieho@ itri.org.tw, Deadline: 10/15/11 www: http:// June 3 - 8, 2012, * IEEE Photovoltaic Spe- February 21 - 24, 2012, T, International Con- vlsidat.itri.org.tw/2012/ cialists Conference, Location: Austin Conven- ference on “Modern Problems of Radio tion Center, Austin, TX, USA, Contact: Americo Engineering, Telecommunications and April 23 - 25, 2012, T, International Sym- Forestieri, E-Mail: [email protected], Deadline: Computer Science”, Location: Lviv Polytech- posium on VLSI Technology, Systems 2/06/12, www: http://www.ieee-pvsc.org nic National University, Lvivi, Ukraine, Contact: and Applications, Location: Ambassador Ho- Mykhalyo Andriychuk, E-Mail: andr@iapmm. tel, Hsinchu, Taiwan, Contact: Clara Wu, E-Mail: June 3 - 7, 2012, T, IEEE International Pow- lviv.ua, Deadline: 12/1/11, www: http://www. [email protected], Deadline: 10/31/11, www: er Modulator and High Voltage Confer- lp.edu.ua/TCSET2012 http://vlsitsa.itri.org.tw/ ence, Location: Hilton San Diego Bayfront, San Diego, CA, USA, Contact: Richard Ness, E-Mail: March 5 - 7, 2012, T, International Confer- May 13 - 16, 2012, * International Confer- [email protected], Deadline: 1/15/12, www: ence on Ultimate Integration of Silicon ence on Microelectronics, Location: Univer- http://www.nessengr.com/ipmhvc2012/index. Devices, Location: MINATEC, Grenoble, France, sity of Nis, Nis, Serbia, Contact: Ninoslav Sto- html Contact: Quentin Rafhay, E-Mail: quentin. jadinovic, E-Mail: ninoslav.stojadinovic@elfak. [email protected], Deadline: ni.ac.rs, Deadline: 10/15/11, www: http://miel. June 4 - 6, 2012, T, International SiGe Tech- 12/19/11, www: http://ulisconference.org/ elfak.ni.ac.rs/ nology and Devices Meeting, Location: Uni- versity of California, Berkeley, CA, USA, Contact: March 14 - 17, 2012, T, International Ca- May 14 - 17, 2012, T, International Elec- Katalin Voros, E-Mail: [email protected], ribbean Conference on Devices, Circuits trostatic Discharge Workshop, Location: Deadline: 1/16/12, www: http://www-device. and Systems, Location: Sandos Caracol Eco Priory Corsendonk, Oud Turnhout, Belgium, Con- eecs.berkeley.edu/istdm2012/2012_ISTDM/ Resort & Spa, Playa del Carmen, Mexico, Con- tact: Lisa Pimpinella, E-Mail: lpimpinella@esda. tact: Rodrigo Picos, E-Mail: [email protected], org, Deadline: 11/14/11, www: http://www. June 12 - 14, 2012, @ IEEE Symposium on Deadline: 10/3/11, www: http://iccdcs.uib.es/ esda.org/IEW.htm VLSI Technology, Location: Hilton Hawai- ian Village, Honolulu, HI, USA, Contact: Phyl- March 19 - 22, 2012, @ IEEE Internation- May 15 - 17, 2012, T, IEEE SEMI Advanced lis Mahoney, E-Mail: [email protected], al Conference on Microelectronic Test Semiconductor Manufacturing Confer- Deadline: Not Available, www: http://www. Structures, Location: Catamaran Hotel, San Di- ence, Location: 534 Broadway, Saratoga Springs, vlsisymposium.org ego, CA, USA, Contact: Wendy Walker, E-Mail: NY, USA, Contact: Margaret Kindling, E-Mail: [email protected], Deadline: 9/16/11, [email protected], Deadline: 10/24/11, June 13 - 15, 2012, T, IEEE Symposium www: http://www.see.ed.ac.uk/icmts www: http://www.semi.org/asmc2012 on VLSI Circuits, Location: Hilton Hawai- ian Village, Honolulu, HI, USA, Contact: Phyl- March 19 - 21, 2012, T, IEEE International May 20 - 23, 2012, * IEEE International lis Mahoney, E-Mail: [email protected], Symposium on Quality Electronic De- Memory Workshop, Location: Melia Hotel, Deadline: Not Available, www: http://www. sign, Location: Techmart Center/Hyatt Regency, Milan, Italy, Contact: Agostino Pirovano, E-Mail: vlsisymposium.org/ Santa Clara, CA, USA, Contact: Ali Iranmanesh, [email protected], Deadline: Not Available E-Mail: [email protected], Deadline: 9/26/11, www: Not Available July 2 - 6, 2012, T, IEEE International Sym- www: http://www.isqed.org posium on the Physical and Failure May 22 - 25, 2012, T, International Work- Analysis of Integrated Circuits, Location: April 15 - 19, 2012, * IEEE International Reli- shop on Computational Electronics, Loca- Marina Bay Sands, Singapore, Singapore, Con- ability Physics Symposium, Location: Hyatt tion: University of Wisconsin-Madison, Madi- tact: Jasmine Leong, E-Mail: [email protected], Regency Orange County, Garden Grove, CA, son, WI, USA, Contact: Irena Knezevic, E-Mail: Deadline: 1/18/12, www: http://ewh.ieee.org/ USA, Contact: David Barber, E-Mail: dbarbsta [email protected], Deadline: 1/15/12, reg/10/ipfa/ @aol.com, Deadline: 10/3/11, www: http:// www: http://iwce2012.engr.wisc.edu/ www.irps.org July 2 - 6, 2012, T, European Electromag- May 30 - 31, 2012, T, IEEE Energy Tech, netics Conference, Location: Centre de Con- April 20 - 20, 2012, T, IEEE Workshop on Location: Case Western Reserve University, grès Pierre Baudis, Toulouse, France Contact: Microelectronics and Electron Devices, Cleveland, OH, USA, Contact: Wyatt Newman, Jean-Philippe Parmantier, E-Mail: euroem2012@ Location: Boise State University, Student Union E-Mail: [email protected], Deadline: 1/15/12, onera.fr, Deadline: 1/9/12, www: http://www. Bldg., Boise, ID, USA, Contact: Prashant Ra- www: http://energytech2012.org/ euroem.org

January 2012 m IEEE Electron Devices Society Newsletter 33 July 4 - 6, 2012 T International Workshop http://www.ieee-bctm.org/, E-Mail: ccsev- December 10 - 12, 2012, * IEEE Interna- on Active-Matrix Flatpanel Displays [email protected] tional Electron Devices Meeting, Loca- and Devices (AM-FPD) Location: Ryukoku tion: Hilton San Francisco, San Francisco, CA, University, Kyoto, Japan, Contact: AM-FPD Secre- October 1 - 4, 2012, * IEEE International USA, Contact: Phyllis Mahoney, E-Mail: phyl- tariats, c/o Mobara Atecs, Ltd., E-Mail: amfpd@ SOI Conference, Location: The Meritage Re- [email protected], Deadline: Not Avail- atecs.co.jp, Deadline: 3/20/2012, www: http:// sort and Spa, Napa, CA, USA, Contact: Joyce able, www: http://www.his.com/~iedm/gen- www.amfpd.jp Hooper, E-Mail: [email protected], Deadline: Not eral/future.html Available, www: http://www.soiconference.org July 9 - 10, 2012, T, University/Govern- April 14 - 18, 2013, * IEEE International ment/Industry Microelectronics Sympo- October 1 - 5, 2012, T, European Sympo- Reliability Physics Symposium, Location: sium, Location: University of California, Berke- sium on Reliability of Electron Devices, Hyatt Regency Monterey, Monterey, CA, USA, ley, CA, USA, Contact: Katalin Voros, E-Mail: Failure Physics and Analysis, Location: Contact: David Barber, E-Mail: dbarbsta@aol. [email protected], Deadline: 2/1/12, Hotel Setar, Cagliari, Italy, Contact: Gaudenzio com, Deadline: 10/1/12, www: http://www. www: http://microlab2.eecs.berkeley.edu/ Meneghesso, E-Mail: [email protected], irps.org UGIM2012/ Deadline: 3/16/12, www: http://www.esref.org December 15 - 17, 2014, * IEEE International September 9 - 12, 2012, T, IEEE Custom In- October 14 - 17, 2012, * IEEE Compound Electron Devices Meeting, Location: Hilton tegrated Circuits Conference, Location: Semiconductor IC Symposium, Location: San Francisco, San Francisco, CA, USA, Contact: DoubleTree Hotel, San Jose, CA, USA, Contact: Hyatt Regency La Jolla, San Diego, CA, USA, Con- Phyllis Mahoney, E-Mail: phyllism@widerkehr. Melissa Widerkehr, E-Mail: melissaw@widerkehr. tact: Lisa Boyd, E-Mail: [email protected], Dead- com, Deadline: Not Available, www: http:// com, Deadline: 4/7/12, www: http://www.ieee- line: Not Available, www: http://www.csics.org www.ieee.org/conference/iedm cicc.org December 6 - 8, 2012, * IEEE Semiconductor December 7 - 9, 2015, * IEEE International September 30 - October 3, 2012 * IEEE Bi- Interface Specialists Conference, Location: Electron Devices Meeting, Location: Hilton polar/BiCMOS Circuits and Technol- Catamaran Resort Hotel, San Diego, CA, USA, Washington, Washington, DC, USA, Contact: ogy Meeting, Location: Embassy Suites Ho- Contact: Michel Houssa, E-Mail: michel.houssa@ Phyllis Mahoney, E-Mail: phyllism@widerkehr. tel, Portland, OR, USA, Contact: Janice Jopke, fys.kuleuven.be, Deadline: Not Available, www: com, Deadline: 6/26/15, www: http://www. CCS Events, Deadline: 4/30/2012, www: http://www.ieeesisc.org ieee-iedm.org

ContrIbutE to thE lEgaCY of thE IEEE ElECtron DEVICES SoCIEtY

Innovation doesn’t just happen. Read fi rst-person accounts of IEEE members who were there. Photo: NASA IEEE Global History Network www.ieeeghn.org

09-HIST-0382b-GHN-7x4.75-Final.indd 1 2/10/11 10:06 AM 34 IEEE Electron Devices Society Newsletter m January 2012 on-lInE aCCESS to IEEE JournalS aVaIlablE to EDS mEmbErS

As an EDS member, you have FREE on-line access to the full articles of the following pub- lications: • Journal of Photovoltaics (NEW) • Electron Device Letters (All Issues From 1980 through current) • Transactions on Electron Devices (All Issues From 1954 through current) • International Electron Devices Meeting (All Digests From 1955 through current) • EDS Newsletter • Journal of Lightwave Technology Samar K. Saha EDS Vice- President These publications can be viewed through the on-line delivery system, IEEE Xplore, which of Publications provides EDS members with the following benefits/capabilities: • Online access to their IEEE personal subscriptions • Full-text PDF image files for content, including all original charts, graphics, diagrams, photographs and illustrative material, from an integrated-circuit schematic to a topographic map to a photograph of a new crystalline structure • Full-text search allows you to search metadata fields and the associated full-text journal/transaction • Links to references and cross linking between EDS publications and other IEEE publications is available in articles • CrossRef search offers outbound links to publications by other leading publishers, employing the google search engine • Online version available prior to the print equivalent • Free and unlimited access to abstract/citation records • Unlimited printing of bibliographic records and full-text documents • Includes cover to cover material starting (starting in 2004) i.e., letters to editor, editorial boards, call for papers

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Samar K. Saha EDS Vice-President of Publications University of Colorado Colorado Springs, CO, USA

January 2012 m IEEE Electron Devices Society Newsletter 35 QuestEDS

Interested in knowing why it’s not Device Physics possible to measure the built-in volt- age of a PN junction using a voltme- Question 052-11 In drain induced barrier lowering the barrier height at the source channel ter? Do you need to understand the interface will reduce due to lateral drain electric filed. Now, more electrons best way to derive an expression for will enter the channel from the source as the barrier is reduced. Would the average thermal velocity of an these extra electrons which enter the channel be tied to the gate trans- electron? Or are you curious about verse filed or drain lateral field? what quantum dots and wires are? Educational Activities The answers to these questions and Question 053-11 more are available through the Quest- I am in my final year of Bachelors (Electronic Engineering Technology). EDS Question and Answer page. I am actively looking for a final year/Senior year project in the areas of To ask a question not already Sensors, Power, Communications (Digital/Wireless), or any field that is addressed on the Q&A page, visit currently gaining attention. I am looking for project ideas, resources, as- www.ieee.org/go/questeds. Techni- sistance, and any other help that can be provided. cal experts answering the questions posed represent academic, govern- Two other categories address ques- For the answers to these recent ment, and industry sectors. tions pertaining to educational activi- submissions, visit http://eds.ieee. Questions are grouped into five ties and general inquiries about society org/questeds/question-and-answer- technical categories and two gen- membership. Within a two week time page.html and select the appropriate eral ones. Technical categories cover frame from when the question is asked, topic links. subject areas like semiconductor and an answer is posted online. Incoming device physics, process technology, questions are handled by an editor-in- Samar K. Saha device characterization and quantum chief who ensures that they fall within EDS Vice-President of Publications electronics. Subject areas addressed the technical scope of EDS and that University of Colorado are anticipated to expand in the future. they are adequately answered. Colorado Springs, CO, USA

36 IEEE Electron Devices Society Newsletter m January 2012