Theory, Synthesis, and Application of Adiabatic and Reversible Logic
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Magnonic Logic Circuits
IOP PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 43 (2010) 264005 (10pp) doi:10.1088/0022-3727/43/26/264005 Magnonic logic circuits Alexander Khitun, Mingqiang Bao and Kang L Wang Device Research Laboratory, Electrical Engineering Department, Focus Center on Functional Engineered Nano Architectonics (FENA), Western Institute of Nanoelectronics (WIN), University of California at Los Angeles, Los Angeles, California, 90095-1594, USA Received 23 November 2009, in final form 31 March 2010 Published 17 June 2010 Online at stacks.iop.org/JPhysD/43/264005 Abstract We describe and analyse possible approaches to magnonic logic circuits and basic elements required for circuit construction. A distinctive feature of the magnonic circuitry is that information is transmitted by spin waves propagating in the magnetic waveguides without the use of electric current. The latter makes it possible to exploit spin wave phenomena for more efficient data transfer and enhanced logic functionality. We describe possible schemes for general computing and special task data processing. The functional throughput of the magnonic logic gates is estimated and compared with the conventional transistor-based approach. Magnonic logic circuits allow scaling down to the deep submicrometre range and THz frequency operation. The scaling is in favour of the magnonic circuits offering a significant functional advantage over the traditional approach. The disadvantages and problems of the spin wave devices are also discussed. 1. Introduction interest in spin waves as a potential candidate for information transmission. The situation has changed drastically as the There is an immense practical need for novel logic devices characteristic distance between the devices on the chip entered capable of overcoming the constraints inherent to conventional the deep-submicrometre range. -
Modèle Document
AVISO DT CorSSH and DT SLA Product Handbook Reference: CLS-DOS-NT-08.341 Nomenclature: - Issue: 2 rev 0 Date: October 2012 Aviso Altimetry 8-10 rue Hermès, 31520 Ramonville St Agne, France – [email protected] DT CorSSH and DT SLA Product Handbook CLS-DOS-NT-08.341 Iss :2.9 - date : 28/02/2012 - Nomenclature: - i.1 Chronology Issues: Issue: Date: Reason for change: 1.0 2005/07/18 1st issue 1.1 2005/11/08 Processing of ERS-2 data 1.2 2005/10/17 Processing of GFO data 1.3 2008/06/10 New standards for corrections and models for Jason-1 1.4 2008/08/07 New standards for corrections and models for Envisat after cycle 65. 1.5 2008/12/18 New standards for corrections and models for Jason-1 GDR-C. 1.6 2010/03/05 New standards for Jason-2 1.7 2010/06/08 New standards for corrections and/or models Processing of ERS-1 data 1.8 2011/04/14 Correction of table 2 1.9 2012/02/28 Specification of the reading routines for SLA files only 2.0 2012/10/16 New geodetic orbit for Jason-1 (c≥500) New version D for Jason-2 (c≥146) D : page deleted I : page inserted M : page modified DT CorSSH and DT SLA Product Handbook CLS-DOS-NT-08.341 Iss :2.9 - date : 28/02/2012 - Nomenclature: - i.2 List of Acronyms: ATP Along Track Product Aviso Archiving, Validation and Interpretation of Satellite Oceanographic data Cersat Centre ERS d’Archivage et de Traitement CLS Collecte, Localisation, Satellites CMA Centre Multimissions Altimetriques Cnes Centre National d’Etudes Spatiales CorSSH Corrected Sea Surface Height Doris Doppler Orbitography and Radiopositioning Integrated -
Resume of Zeng Yuping 20180109 for Publishing on Website
Curriculum Vitae Name Yuping Zeng Degree PhD DOB 12/02/1979 Visa Permanent Gender Female E-mail [email protected] Status Resident (U.S.) Mailing Address: Current Affiliation 139 The Green, Evans Hall 140 Assistant Professor Department of ECE Department of ECE University of Delaware University of Delaware Newark, DE 19716 Cell Phone: 510-610-2894 Office Phone: 302-831-3847 Projects Involved and Achievements Ø 34 peer-reviewed journal papers and 16 papers at international conferences; Ø Postdoctoral Research (2011-2016) in UC Berkeley Design and fabrication of InAs/AlSb/GaSb Tunneling Field Effect Transistors; High speed InAs Metal Oxide Semiconductor Field Effect transistors on Silicon (MOSFETs); InAs-on-Si fin field effect transistors (FinFETs) Ø PhD Research (2004-2011) in Swiss Federal Institute of Technology Design and fabrication of high-speed InP/GaAsSb Double-Heterojunction Bipolar Transistors (DHBTs) with record fT and fMAX cut-off frequencies Ø PhD Research (2003-2004) in Simon Fraser University High-speed photodetector; High Electron Mobility Transistors (HEMTs) Ø Second Master Research (2001-2003) in National University of Singapore Raman study of laser annealed silicon and photoluminecence from nano-scaled silicon Ø First Master Research (1998-2001) in Jilin University Fabrication of development of Superluminescent Light Emitting Diode (SLED): InGaAsP/InP and GaAlAs/GaAs Ø Bachelor Research (1994-1998) in Jilin University Mode Analysis of VCSEL with Fiber Gratings as its Distributed Bragg Reflector (DBR) 1 Education Swiss Federal -
ERSFQ 8-Bit Parallel Arithmetic Logic Unit
1 ERSFQ 8-bit Parallel Arithmetic Logic Unit A. F. Kirichenko, I. V. Vernik, M. Y. Kamkar, J. Walter, M. Miller, L. R. Albu, and O. A. Mukhanov Abstract— We have designed and tested a parallel 8-bit ERSFQ To date, the reported superconductor ALU designs were arithmetic logic unit (ALU). The ALU design employs wave- implemented using RSFQ logic following bit-serial, bit-slice, pipelined instruction execution and features modular bit-slice ar- chitecture that is easily extendable to any number of bits and and parallel architectures. adaptable to current recycling. A carry signal synchronized with The bit-serial designs have the lowest complexity; however, an asynchronous instruction propagation provides the wave- their latencies increase linearly with the operand lengths, hard- pipeline operation of the ALU. The ALU instruction set consists of ly making them competitive for implementation in 32-/64-bit 14 arithmetical and logical instructions. It has been designed and processors [17], [18]. Bit-serial ALUs were used in 8-bit simulated for operation up to a 10 GHz clock rate at the 10-kA/cm2 fabrication process. The ALU is embedded into a shift-register- RSFQ microprocessors [19]-[24], in which an 8 times faster based high-frequency testbed with on-chip clock generator to allow internal clock is still feasible. As an example, an 80 GHz bit- for comprehensive high frequency testing for all possible operands. serial ALU was reported in [25]. The 8-bit ERSFQ ALU, comprising 6840 Josephson junctions, has In order to alleviate the high-clock requirements and long 2 been fabricated with MIT Lincoln Lab’s 10-kA/cm SFQ5ee fabri- latencies of bit-serial design while keeping moderate hardware cation process featuring eight Nb wiring layers and a high-kinetic inductance layer needed for ERSFQ technology. -
Japan's ERATO and PRESTO Basic Research Programs
Japanese Technology Evaluation Center JTEC JTEC Panel Report on Japan’s ERATO and PRESTO Basic Research Programs George Gamota (Panel Chair) William E. Bentley Rita R. Colwell Paul J. Herer David Kahaner Tamami Kusuda Jay Lee John M. Rowell Leo Young September 1996 International Technology Research Institute R.D. Shelton, Director Geoffrey M. Holdridge, WTEC Director Loyola College in Maryland 4501 North Charles Street Baltimore, Maryland 21210-2699 JTEC PANEL ON JAPAN’S ERATO AND PRESTO PROGRAMS Sponsored by the National Science Foundation and the Department of Commerce of the United States Government George Gamota (Panel Chair) David K. Kahaner Science & Technology Management Associates Asian Technology Information Program 17 Solomon Pierce Road 6 15 21 Roppongi, Harks Roppongi Bldg. 1F Lexington, MA 02173 Minato ku, Tokyo 106 Japan William E. Bentley Tamami Kusuda University of Maryland 5000 Battery Ln., Apt. #506 Dept. of Chemical Engineering Bethesda, MD 20814 College Park, MD 20742 Jay Lee Rita R. Colwell National Science Foundation University of Maryland 4201 Wilson Blvd., Rm. 585 Biotechnology Institute Arlington, VA 22230 College Park, MD 20740 John Rowell Paul J. Herer 102 Exeter Dr. National Science Foundation Berkeley Heights, NJ 07922 4201 Wilson Blvd., Rm. 505 Arlington, VA 22230 Leo Young 6407 Maiden Lane Bethesda, MD 20817 INTERNATIONAL TECHNOLOGY RESEARCH INSTITUTE WTEC PROGRAM The World Technology Evaluation Center (WTEC) at Loyola College (previously known as the Japanese Technology Evaluation Center, JTEC) provides assessments of foreign research and development in selected technologies under a cooperative agreement with the National Science Foundation (NSF). Loyola's International Technology Research Institute (ITRI), R.D. -
Extraction of Front and Buried Oxide Interface Trap Densities in Fully
Q32 ECS Solid State Letters, 2 (5) Q32-Q34 (2013) 2162-8742/2013/2(5)/Q32/3/$31.00 © The Electrochemical Society Extraction of Front and Buried Oxide Interface Trap Densities in Fully Depleted Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor Jen-Yuan Cheng,z Chun Wing Yeung, and Chenming Hu Department of Electrical Engineering and Computer Science, University of California, Berkeley, Berkeley, California 94720, USA In this letter, a method is proposed and demonstrated for the first time to characterize and decouple the interface traps of both the front- and back channels of fully-depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field-effect transistor (MOSFET). We report the procedure and the underlying theory that allows the extraction of the energy profiles of the densities of the interface traps (Dit).This technique will be very useful for evaluating the interface qualities of future FD-SOI transistors. © 2013 The Electrochemical Society. [DOI: 10.1149/2.001305ssl] All rights reserved. Manuscript submitted December 31, 2012; revised manuscript received January 28, 2013. Published February 12, 2013. The fully-depleted silicon on insulator (FD-SOI) ultra-thin body channels in FD-SOI, the corresponding surface potentials for front 1–3 UTBSOI MOSFET is gaining new attention as an alternative tech- and back channel interface φsF and φsB with respect to the applied nology to FinFET4 for ultra-low power and mobile applications be- front and back bias can be expressed as follows19,20 cause of its outstanding -
USE and MAINTENANCE MANUAL
USE and MAINTENANCE MANUAL -Steam sterilizer- FOREWORD This manual must be considered an integral part of the sterilizer, and must always be available to users. The manual must always accompany the sterilizer, even if it is sold to another user. All operators are responsible for reading this manual and for strictly complying with the instructions and information it provides. COMINOX is not liable for any damage to people, things, or the sterilizer itself in the event that the operator fails to comply with the conditions described in the manual. These instructions are confidential and the customer may not disclose any information to third parties. Further, this documentation and its attachments may not be tampered with or modified, copied, or ceded to third parties without authorization from COMINOX. 2 Table of contents TABLE OF CONTENTS TABLE OF CONTENTS ........................................................................................................................ 3 Reference index .............................................................................................................................. 6 Graphic representation of references Mod. 18 ......................................................................... 7 Graphic representation of references Mod. 24 ......................................................................... 8 INTRODUCTION .............................................................................................................................. 11 GENERAL SUPPLY CONDITIONS ....................................................................................................... -
A Stochastic-Computing Based Deep Learning Framework Using
A Stochastic-Computing based Deep Learning Framework using Adiabatic Quantum-Flux-Parametron Superconducting Technology Ruizhe Cai Olivia Chen Ning Liu Ao Ren Yokohama National University Caiwen Ding Northeastern University Japan Northeastern University USA [email protected] USA {cai.ruiz,ren.ao}@husky.neu.edu {liu.ning,ding.ca}@husky.neu.edu Xuehai Qian Jie Han Wenhui Luo University of Southern California University of Alberta Yokohama National University USA Canada Japan [email protected] [email protected] [email protected] Nobuyuki Yoshikawa Yanzhi Wang Yokohama National University Northeastern University Japan USA [email protected] [email protected] ABSTRACT increases the difficulty to avoid RAW hazards; the second is The Adiabatic Quantum-Flux-Parametron (AQFP) supercon- the unique opportunity of true random number generation ducting technology has been recently developed, which achieves (RNG) using a single AQFP buffer, far more efficient than the highest energy efficiency among superconducting logic RNG in CMOS. We point out that these two characteristics families, potentially 104-105 gain compared with state-of-the- make AQFP especially compatible with the stochastic com- art CMOS. In 2016, the successful fabrication and testing of puting (SC) technique, which uses a time-independent bit AQFP-based circuits with the scale of 83,000 JJs have demon- sequence for value representation, and is compatible with strated the scalability and potential of implementing large- the deep pipelining nature. Further, the application of SC scale systems using AQFP. As a result, it will be promising has been investigated in DNNs in prior work, and the suit- for AQFP in high-performance computing and deep space ability has been illustrated as SC is more compatible with applications, with Deep Neural Network (DNN) inference approximate computations. -
Nonconventional Computer Arithmetic Circuits, Systems and Applications Leonel Sousa, Senior Member, IEEE
1 Nonconventional Computer Arithmetic Circuits, Systems and Applications Leonel Sousa, Senior Member, IEEE Abstract—Arithmetic plays a major role in a computer’s basic levels and leads to high power consumption. Hence, performance and efficiency. Building new computing platforms the research on unconventional number systems is of the supported by the traditional binary arithmetic and silicon-based utmost interest to explore parallelism and take advantage of technologies to meet the requirements of today’s applications is becoming increasingly more challenging, regardless whether we the characteristics of emerging technologies to improve both consider embedded devices or high-performance computers. As a the performance and the energy efficiency of computational result, a significant amount of research effort has been devoted to systems. Moreover, by avoiding the dependencies of binary the study of nonconventional number systems to investigate more systems, nonconventional number systems can also support efficient arithmetic circuits and improved computer technologies the design of reliable computing systems using the newest to facilitate the development of computational units that can meet the requirements of applications in emergent domains. available technologies, such as nanotechnologies. This paper presents an overview of the state of the art in non- conventional computer arithmetic. Several different alternative computing models and emerging technologies are analyzed, such A. Motivation as nanotechnologies, superconductor devices, and biological- and quantum-based computing, and their applications to multiple The Complementary Metal-Oxide Semiconductor (CMOS) domains are discussed. A comprehensive approach is followed transistor was invented over fifty years ago and has played in a survey of the logarithmic and residue number systems, a key role in the development of modern electronic devices the hyperdimensional and stochastic computation models, and and all that it has enabled. -
Annual Report 2002 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD
TSE: 2330 NYSE: TSM Taiwan Semiconductor Manufacturing Company, Ltd. Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Manufacturing Company, Taiwan Annual Report 2002 121, Park Ave. 3, Science-Based Industrial Park, Hsin-Chu, Taiwan 300-77, R.O.C. Tel: 886-3-578-0221 Fax: 886-3-578-1546 http://www.tsmc.com Taiwan Semiconductor Manufacturing Company, Ltd. Annual Report 2002 • Taiwan Stock Exchange Market Observation Post System: http://mops.tse.com.tw • TSMC annual report is available at http://www.tsmc.com/english/tsmcinfo/c0203.htm Morris Chang, Chairman Printed on March 12, 2003 TABLE OF CONTENTS 3 LETTER TO THE SHAREHOLDERS 7 A BRIEF INTRODUCTION TO TSMC 7 Company Profile 8 Market Overview MAJOR FACILITIES TSMC SPOKESPERSON 9 Organization Corporate Headquarters & FAB 2, FAB 5 Name: Harvey Chang 18 Capital & Shares 121, Park Ave. 3 Title: Senior Vice President & CFO 22 Issuance of Corporate Bonds Science-Based Industrial Park Tel: 886-3-563-6688 Fax: 886-3-563-7000 23 Preferred Shares Hsin-Chu, Taiwan 300-77, R.O.C. Email: [email protected] 24 Issuance of American Depositary Shares Tel: 886-3-578-0221 Fax: 886-3-578-1546 26 Status of Employee Stock Option Plan (ESOP) Acting Spokesperson 26 Status of Mergers and Acquisitions FAB 3 Name: J.H. Tzeng 26 Corporate Governance 9, Creation Rd. 1 Title: Public Relations Department Manager 30 Social Responsibility Information Science-Based Industrial Park Tel: 886-3-563-6688 Fax: 886-3-567-0121 Hsin-Chu, Taiwan 300-77, R.O.C. Email: [email protected] 32 OPERATIONAL HIGHLIGHTS Tel: 886-3-578-1688 Fax: 886-3-578-1548 32 Business Activities AUDITORS 34 Customers FAB 6 Company: T N SOONG & CO 34 Raw Material Supply 1, Nan-Ke North Rd. -
User's Manual
FCModeler User’s Manual Version 1.0 September 2002 Written by Zach Cox Julie Dickerson Adam Tomjack Copyright Julie Dickerson, Iowa State University 2002 Table of Contents 1 Introduction to FCModeler .....................................................................................................1 2 Setting Up FCModeler............................................................................................................ 1 2.1 Setting up the FCModelerConfig File............................................................................. 1 2.2 Running FCModeler....................................................................................................... 1 3 Sources of Input ...................................................................................................................... 1 3.1 Graph XML Files............................................................................................................ 1 3.1.1 XML Format ........................................................................................................... 1 3.1.2 Example of a Complete XML File.......................................................................... 5 3.1.3 Opening a Graph XML File.................................................................................... 6 3.1.4 Saving a Graph XML File....................................................................................... 7 3.1.5 Saving a JPEG Image of the Graph ........................................................................ 8 3.2 MySQL Database........................................................................................................... -
Steep On/Off Transistors for Future Low Power Electronics
Steep On/Off Transistors for Future Low Power Electronics Chun Wing Yeung Electrical Engineering and Computer Sciences University of California at Berkeley Technical Report No. UCB/EECS-2014-226 http://www.eecs.berkeley.edu/Pubs/TechRpts/2014/EECS-2014-226.html December 18, 2014 Copyright © 2014, by the author(s). All rights reserved. Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission. Acknowledgement First, words will never be enough to express my sincere gratitude to Prof. Chenming Hu. In the past six years, his vision and wisdom have enlightened and guided me through the ups and downs of my PhD journey. I would like to thank Prof. Tsu-Jae King Liu and my mentor, Dr. Alvaro Padilla, for giving me a chance to do research in the device group when I was an undergraduate. I am also very grateful to have Prof. Sayeef Salahuddin be my co-advisor, and thankful for his advice in the negative capacitance FET project. I would also like to acknowledge the DARPA STEEP project, Qualcomm fellowship, and Center for Energy Efficient Electronics Science (E3S) for funding and supporting our research. Steep On/Off Transistors for Future Low Power Electronics By Chun Wing Yeung A dissertation submitted in partial