LBNL-57610 Invited Review for IEEE Transactions on Plasma Science Special Issue on Ion Sources (vol. 33, no.6, 2005) Plasma-based ion implantation and deposition: A review of physics, technology, and applications Jacques Pelletier Centre de Recherche Plasmas-Matériaux-Nanostructures, LPSC, 53 rue des Martyrs, 38036 Grenoble Cedex, France André Anders Lawrence Berkeley National Laboratory, University of California, Berkeley, 1 Cyclotron Road, California 94720, USA Original May 16, 2005 Revised July 4, 2005 Corresponding Author: Dr. André Anders Lawrence Berkeley National Laboratory 1 Cyclotron Road, MS 53 Berkeley, CA 94720, USA Tel. + (510) 486-6745 Fax + (510) 486-4374 e-mail
[email protected] This work was supported by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Building Technology, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. IEEE TPS 0968 –LBNL-57610 – 1 Plasma-based ion implantation and deposition: A review of physics, technology, and applications Jacques Pelletier Centre de Recherche Plasmas-Matériaux-Nanostructures, LPSC, 53 rue des Martyrs, 38036 Grenoble Cedex, France André Anders Lawrence Berkeley National Laboratory, University of California, Berkeley, 1 Cyclotron Road, California 94720, USA Abstract After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modelling.