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Electrical Activation Studies of Ion Implanted Gallium Nitride

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Electrical Activation Studies of Ion Implanted Gallium Nitride Air Force Institute of Technology AFIT Scholar Theses and Dissertations Student Graduate Works 11-20-2001 Electrical Activation Studies of Ion Implanted Gallium Nitride James A. Fellows Follow this and additional works at: https://scholar.afit.edu/etd Part of the Semiconductor and Optical Materials Commons Recommended Citation Fellows, James A., "Electrical Activation Studies of Ion Implanted Gallium Nitride" (2001). Theses and Dissertations. 4355. https://scholar.afit.edu/etd/4355 This Dissertation is brought to you for free and open access by the Student Graduate Works at AFIT Scholar. It has been accepted for inclusion in Theses and Dissertations by an authorized administrator of AFIT Scholar. For more information, please contact [email protected]. Electrical Activation Studies of Ion Implanted Gallium Nitride Dissertation James A. Fellows, Major, USAF AFIT/DS/ENP/02-2 DEPARTMENT OF THE AIR FORCE AIR UNIVERSITY AIR FORCE INSTITUTE OF TECHNOLOGY Wright-Patterson Air Force Base, Ohio APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED. Report Documentation Page Report Date Report Type Dates Covered (from... to) 20 Nov 2001 Final Aug 1998 - Nov 2001 Title and Subtitle Contract Number Electrical Avtivation Studies of Ion Implanted Gallium Nitride Grant Number Program Element Number Author(s) Project Number Major James A. Fellows, USAF Task Number Work Unit Number Performing Organization Name(s) and Address(es) Performing Organization Report Number Air Force Institute of Technology Graduate School of AFIT/DS/ENP/02-2 Engineering & Management (AFIT/EN) 2950 P Street, Bldg 640 WPAFB OH 45433-7765 Sponsoring/Monitoring Agency Name(s) and Sponsor/Monitor’s Acronym(s) Address(es) Major Daniel K. Johnstone AFOSR/NE 801 North Randolph St. Arlington, VA 22203-1977 Dr. William C. Sponsor/Monitor’s Report Number(s) Mitchel AFRL/MLPS 3005 P St., Ste 6 WPAFB OH 45433-7707 Distribution/Availability Statement Approved for public release, distribution unlimited Supplementary Notes Abstract A comprehensive and systematic electrical activation study of Si-implanted GaN was performed as a function of ion implantation dose, anneal temperature, and implantation temperature. Additionally, Mg-implanted GaN was also investigated. Temperature-dependent Hall effect measurements and photoluminescence (PL) spectra were used to characterize the samples. GaN wafers capped with AlN were implanted with Si ions at doses ranging from 1x1013 to 5x1015 cm-2 and annealed from 1050 to 1350 oC. The optimum anneal temperature for samples implanted with the higher Si doses is around 1350 oC, exhibiting nearly 100% electrical activation efficiency. Exceptional mobilities and carrier concentrations were obtained on all Si-implanted samples. PL spectra revealed nearly complete implantation damage recovery as well as the nature of the yellow luminescence plaguing nearly all Si-doped GaN. Additionally, GaN wafers were implanted with Mg and various coimplants and annealed from 1100 to 1350 oC. All of the Mg-implanted and most of the Mg-coimplanted GaN samples became extremely resistive, and did not show definite p-type conductivity even after annealing at 1350 oC, remaining highly resistive even at a sample temperature as high as 800 K. A dominant 2.36 eV green luminescence band observed in the PL spectra of all Mg-implanted samples is attributed to a Mg-related deep complex DAP transition. The inefficient electrical activation of Mg acceptors implanted into GaN is attributed to these Mg-related deep complexes. Subject Terms Wide Bandgap Semiconductor, Gallium Nitride (GaN), Ion Implanation, Silicon, Activation Efficiency, Hall Effect, Photoluminescence Report Classification Classification of this page unclassified unclassified Classification of Abstract Limitation of Abstract unclassified UU Number of Pages 221 “The views expressed in this dissertation are those of the author and do not reflect the official policy or position of the Department of Defense or the U.S. Government” AFIT/DS/ENP/02-2 ELECTRICAL ACTIVATION STUDIES OF ION IMPLANTED GALLIUM NITRIDE DISSERTATION Presented to the Faculty Graduate School of Engineering and Management Air Force Institute of Technology Air University Air Education and Training Command In Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy in Materials Science and Engineering James A. Fellows, B.S., M.S. Major, USAF November 2001 Approved for public release; distribution unlimited AFIT/DS/ENP/02-2 ELECTRICAL ACTIVATION STUDIES OF ION IMPLANTED GALLIUM NITRIDE James A. Fellows, B.S., M.S. Major, US AF Approved: $~ f/oV. 2~0bl Yung Kee Yeo, PhD Date Professor of Physics Chairman, Advisory Committee i£\jfe>>JVJ/ Robert L. Hengehold, PhD Professor and Head, Department of Engineering Physics Member, Advisory Committee *S"AfomfcGC/x>Q( Professor and Deputy Head Department of Electrical and Computer Engineering Member, Advisory Committee V^CfiSk H/L<}M/ Mitchel, Pli Senior Scientist, Air Force Research Laboratory Member, Advisory Committee >oof /Anthony\fcL£*flazdtto,'P| Professor, Department of Aero & Astronautics Dean's Representative Accepted: 'obert A. Calico, Jr. Dean, Graduate School of Engineering and Management Acknowledgments Any significant milestone in one’s life is made successful by the contributions of many others along the way. The successful completion of this research is no different for me. I am extremely appreciative and thankful for my advisor Dr. Yung Kee Yeo. He provided the guidance, motivation, and instruction to press on through the many frustrating times common in experimental research. As a mentor, his desire and ability to support me in whatever I needed were crucial to finishing this task. Mr. Greg Smith provided invaluable technical support throughout my research. I am very thankful for his instruction on experimental procedures, his masterful ability to fix problems, and his encouraging discussions. I would like to thank Dr. Mohamed Ahoujja for our many discussions on experimental measurements and doctoral research. I must also thank Mr. Rick Patton for his support in AFIT’s new cleanroom, Dr. William Mitchel for use of his annealing furnace, Dr. Joseph Van Nostrand and Dr. Brendan Gaffey for their AlN growth, Dr. Leonid Krasnobaev for his ion implantation, and Major Mike Scott for his encouragement that I would eventually succeed. I am thankful for Mr. Bill Gorman who always had an ear to listen to my frustrations and my joys. I have much gratitude for my mother, who instilled within me, by her own example, the importance of hard work and a good education. My deepest appreciation goes to my wife and children. I cannot thank them enough for their patience, support, encouragement, understanding, sacrifice, and love throughout this journey. Of course, I am also indebted to the many who supported me with their prayers; and I thank God for answering our prayers. James A. Fellows iv Table of Contents Page Acknowledgments.............................................................................................................. iv List of Figures................................................................................................................... vii List of Tables ...................................................................................................................xiii Abstract............................................................................................................................ xiv I. Introduction ..................................................................................................................... 1 High-temperature, High-power, High-frequency, and High-radiation Electronics ...... 1 Wide Bandgap Semiconductors.................................................................................... 5 Gallium Nitride ............................................................................................................. 7 II. Semiconductors, Energy Bands, and Impurities .......................................................... 11 Historical Perspectives................................................................................................ 11 Crystal Structure ......................................................................................................... 12 Crystal Growth............................................................................................................ 13 Energy Bands.............................................................................................................. 15 Semiconductor Statistics............................................................................................. 21 Impurities .................................................................................................................... 23 III. Ion Implantation, Defects, and Annealing Theory...................................................... 29 Introduction................................................................................................................. 29 Ion Implantation Theory ............................................................................................. 31 Radiation Damage: Crystal Defects........................................................................... 34 Annealing.................................................................................................................... 38 Coimplantation............................................................................................................ 42 IV. Characterization Techniques
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