The Crystal Oscillator
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Crystal Oscillators 1
Crystal oscillators 1. Objectives The aim of the exercise is to get acquainted with issues concerning the generation of waveforms (including sinewaves) in the basic structures of crystal generators. In addition, the exercise aims to familiarize with surface mount technique SMT (Surface Mount Technology/ Technics or SMD – Surface mounting Devices). 2. Components and instrumentation. In the exercise, it is possible to test quartz generators operating in the three simplest and most popular system structures: • Colpitts-Pierce quartz generator with bipolar transistor, • quartz generator implemented on TTL gates, • quartz generator implemented on CMOS inverters 2.1. Colpittsa-Pierce’s oscillator with bipolar transistor. The Colpitts-Pierce quartz generator system working in parallel resonance is shown in Fig. 1. + UCC Rb C2 XT C1 Re UWY Fig. 1. Colpittsa-Pierce oscillator with BJT. Using, in the system, quartz resonators with resonance values up to several tens of MHz, the elements C1, Re in the generator system can be selected according to the graph shown in Fig.2. RezystorRe [Ohm] Frequency [MHz] Fig. 2. Selection of C1 and Re elements in the Colpitts-Pierce oscillator 2.2. Quartz oscillator implemented using TTL digital IC Fig. 3 presents a diagram of a quartz oscillator implemented using NAND gates in TTL technology. The oscillator works in series resonance. In this system, while maintaining the same resistance values, quartz resonators with a frequency from a few to 10 MHz can be used. 560 1k8 220 220 UWY XT Fig. 3. Cristal oscillator with serial resonance implemented with NAND gates in TTL technology In the laboratory exercise, it is proposed to implement the system using TTL series 74LS00 (pins of the IC are shown in in Fig.4). -
PHYSICS Glossary
Glossary High School Level PHYSICS Glossary English/Haitian TRANSLATION OF PHYSICS TERMS BASED ON THE COURSEWORK FOR REGENTS EXAMINATIONS IN PHYSICS WORD-FOR-WORD GLOSSARIES ARE USED FOR INSTRUCTION AND TESTING ACCOMMODATIONS FOR ELL/LEP STUDENTS THE STATE EDUCATION DEPARTMENT / THE UNIVERSITY OF THE STATE OF NEW YORK, ALBANY, NY 12234 NYS Language RBERN | English - Haitian PHYSICS Glossary | 2016 1 This Glossary belongs to (Student’s Name) High School / Class / Year __________________________________________________________ __________________________________________________________ __________________________________________________________ NYS Language RBERN | English - Haitian PHYSICS Glossary | 2016 2 Physics Glossary High School Level English / Haitian English Haitian A A aberration aberasyon ability kapasite absence absans absolute scale echèl absoli absolute zero zewo absoli absorption absòpsyon absorption spectrum espèk absòpsyon accelerate akselere acceleration akselerasyon acceleration of gravity akselerasyon pezantè accentuate aksantye, mete aksan sou accompany akonpaye accomplish akonpli, reyalize accordance akòdans, konkòdans account jistifye, eksplike accumulate akimile accuracy egzatitid accurate egzat, presi, fidèl achieve akonpli, reyalize acoustics akoustik action aksyon activity aktivite actual reyèl, vre addition adisyon adhesive adezif adjacent adjasan advantage avantaj NYS Language RBERN | English - Haitian PHYSICS Glossary | 2016 3 English Haitian aerodynamics ayewodinamik air pollution polisyon lè air resistance -
Piezoelectric Solutions: Piezo Components & Materials
Piezoelectric Solutions Part I - Piezo Components & Materials Part II - Piezo Actuators & Transducers BAUELEMENTE, TECHNOLOGIE, ANSTEUERUNG Part III - Piezo Actuator Tutorial PIEZOWWW.PICERAMIC.DE TECHNOLOGY Contents Part I - Piezo Components & Materials .......... .3 Part II - Piezo Actuators & Transducers . .40 Part III - Piezo Actuator Tutorial ........ .73 Imprint PI Ceramic GmbH, Lindenstrasse, 07589 Lederhose, Germany Registration: HRB 203 .582, Jena local court VAT no .: DE 155932487 Executive board: Albrecht Otto, Dr . Peter Schittenhelm, Dr . Karl Spanner Phone +49 36604-882-0, Fax +49-36604-882-4109 info@piceramic .com, www .piceramic .com Although the information in this document has been compiled with the greatest care, errors cannot be ruled out completely . Therefore, we cannot guarantee for the information being complete, correct and up to date . Illustrati- ons may differ from the original and are not binding . PI reserves the right to supplement or change the information provided without prior notice . All contents, including texts, graphics, data etc ., as well as their layout, are subject to copyright and other protective laws . Any copying, modification or redistribution in whole or in parts is subject to a written permission of PI . The following company names and brands are registered trademarks of Physik Instrumente (PI) GmbH & Co . KG : PI®, PIC®, NanoCube®, PICMA®, PILine®, NEXLINE®, PiezoWalk®, NEXACT®, Picoactuator®, PIn- ano®, PIMag® . The following company names or brands are the registered trademarks of their -
Analysis of BJT Colpitts Oscillators - Empirical and Mathematical Methods for Predicting Behavior Nicholas Jon Stave Marquette University
Marquette University e-Publications@Marquette Master's Theses (2009 -) Dissertations, Theses, and Professional Projects Analysis of BJT Colpitts Oscillators - Empirical and Mathematical Methods for Predicting Behavior Nicholas Jon Stave Marquette University Recommended Citation Stave, Nicholas Jon, "Analysis of BJT Colpitts sO cillators - Empirical and Mathematical Methods for Predicting Behavior" (2019). Master's Theses (2009 -). 554. https://epublications.marquette.edu/theses_open/554 ANALYSIS OF BJT COLPITTS OSCILLATORS – EMPIRICAL AND MATHEMATICAL METHODS FOR PREDICTING BEHAVIOR by Nicholas J. Stave, B.Sc. A Thesis submitted to the Faculty of the Graduate School, Marquette University, in Partial Fulfillment of the Requirements for the Degree of Master of Science Milwaukee, Wisconsin August 2019 ABSTRACT ANALYSIS OF BJT COLPITTS OSCILLATORS – EMPIRICAL AND MATHEMATICAL METHODS FOR PREDICTING BEHAVIOR Nicholas J. Stave, B.Sc. Marquette University, 2019 Oscillator circuits perform two fundamental roles in wireless communication – the local oscillator for frequency shifting and the voltage-controlled oscillator for modulation and detection. The Colpitts oscillator is a common topology used for these applications. Because the oscillator must function as a component of a larger system, the ability to predict and control its output characteristics is necessary. Textbooks treating the circuit often omit analysis of output voltage amplitude and output resistance and the literature on the topic often focuses on gigahertz-frequency chip-based applications. Without extensive component and parasitics information, it is often difficult to make simulation software predictions agree with experimental oscillator results. The oscillator studied in this thesis is the bipolar junction Colpitts oscillator in the common-base configuration and the analysis is primarily experimental. The characteristics considered are output voltage amplitude, output resistance, and sinusoidal purity of the waveform. -
AN826 Crystal Oscillator Basics and Crystal Selection for Rfpic™ And
AN826 Crystal Oscillator Basics and Crystal Selection for rfPICTM and PICmicro® Devices • What temperature stability is needed? Author: Steven Bible Microchip Technology Inc. • What temperature range will be required? • Which enclosure (holder) do you desire? INTRODUCTION • What load capacitance (CL) do you require? • What shunt capacitance (C ) do you require? Oscillators are an important component of radio fre- 0 quency (RF) and digital devices. Today, product design • Is pullability required? engineers often do not find themselves designing oscil- • What motional capacitance (C1) do you require? lators because the oscillator circuitry is provided on the • What Equivalent Series Resistance (ESR) is device. However, the circuitry is not complete. Selec- required? tion of the crystal and external capacitors have been • What drive level is required? left to the product design engineer. If the incorrect crys- To the uninitiated, these are overwhelming questions. tal and external capacitors are selected, it can lead to a What effect do these specifications have on the opera- product that does not operate properly, fails prema- tion of the oscillator? What do they mean? It becomes turely, or will not operate over the intended temperature apparent to the product design engineer that the only range. For product success it is important that the way to answer these questions is to understand how an designer understand how an oscillator operates in oscillator works. order to select the correct crystal. This Application Note will not make you into an oscilla- Selection of a crystal appears deceivingly simple. Take tor designer. It will only explain the operation of an for example the case of a microcontroller. -
Piezoelectric Crystal Experiments for High School Science and En- Gineering Students
Paper ID #14540 MAKER: Piezoelectric Crystal Experiments for High School Science and En- gineering Students Mr. William H. Heeter, Porter High School Engineering Dept. My name is William (Bill) Heeter. I graduated from Texas A&M with an Engineering degree in 1973. I worked in Industrial Distribution for over 30 years before becoming a high school pre-engineering teacher. I have been teaching engineering and technology for the past 13 years. I have been a Master Teacher for ”Project Lead the Way”, CTE co-Director, CTE Building Chair, Technology Teacher. My students have received many awards and college scholarships. One group of students received a provisional U.S. Patent. Several students have seen their work actually produced by industry, including the ordering touch screens used by Bucky’s. Dr. Sheng-Jen ”Tony” Hsieh, Texas A&M University Dr. Sheng-Jen (”Tony”) Hsieh is a Professor in the Dwight Look College of Engineering at Texas A&M University. He holds a joint appointment with the Department of Engineering Technology and the De- partment of Mechanical Engineering. His research interests include engineering education, cognitive task analysis, automation, robotics and control, intelligent manufacturing system design, and micro/nano manufacturing. He is also the Director of the Rockwell Automation laboratory at Texas A&M University, a state-of-the-art facility for education and research in the areas of automation, control, and automated system integration. Dr. Jun Zou, Department of Electrical and Computer Engineering, Texas A&M University Jun Zou received his Ph.D. degree in electrical engineering from the University of Illinois at Urbana- Champaign in 2002. -
Crystals Load Capacitance Calculation And
Load Capacitance PRINTED: 12/21/2012 TYPICAL OSCILLATOR CIRCUIT OSC CELL OSC CELL = oscillator circuit integrated into any IC. Rf = feedback resistor, sometimes integrated in IC or is required as external resistor Rf CLOCK SIGNAL Cg = capacitance of oscillator input for IC internal use Cd = capacitance of oscillator output Rd = Phase shift resistor, necessary at lower frequencies to meet oscillation condition that phase shift all the way around the oscillator loop need to add up to 360°. Y1 = Quartz crystal unit C1 and C1 = external load capacitors. CPCB1 and CPCB2 = stray capacitances of PCB traces Cg Cd The total LOAD CAPACITANCE of the oscillator circuit is the sum of all capacitances. OSC IN OSC OUT consisting of: 1. The two external capacitors (here called C1 and C2) 2. The IC input and output capacitances (here called Cg and Cd) 3. The stray capacitances of PCB traces (here called CPCB1 and CPCB2) CPCB1 Rd Commonly being only the values of the external capacitors known so that a correct calculation of the actual load capacitance is not possible. SIGNAL OUTPUT OPTIONALCLOCK In such case we use simlified formula to calculate the load capacitance as: C1 C2 CL C TOTAL C1 C2 STRAY CPCB2 Here C1 and C2 are the external capacitors in the cricuit, values should be known. Cstray is summarized value for IC input and output capacitance and the PCB traces. Y1 Cstray in a 3.3VDC circuit is often 3~4pF. C1 C2 Cstray in a 5.0VDC circuit often 5~7pF. However, we have also seen circuits that had large deviation from these values. -
MEMS) Technology
Microchip Oscillators and Clocks Using Microelectromechanical Systems (MEMS) Technology Author: John Clark and Graham Mostyn The next milestone will be next-generation MEMS res- Microchip Technology Inc. onators that achieve very low phase noise for high-end communication systems. Microchip acquired MEMS timing technology through OVERVIEW the purchases of Discera and Micrel in 2015. Since Dis- For decades, oscillators and clocks have relied on cera shipped its first production oscillators in 2008, quartz crystals for the creation of a stable frequency almost 100 million devices have been manufactured reference. Crystals perform very well for many applica- and sold. tions. However, microelectromechanical systems This paper describes the benefits of a MEMS-based (MEMS) technology, replacing quartz crystals with solution, the resonator technology, and the design of MEMS resonators, entered the marketplace ten years the final product. ago and is rapidly maturing. MEMS-based timing devices offer high reliability KEY FUNCTIONALITY (including AEC-Q100 certification for automotive use), extended operating temperatures, small size, and low Microchip’s MEMS-based oscillators and clocks offer power consumption. Video surveillance, automotive benefits over traditional quartz solutions (Figure 1). ADAS, general industrial applications, and data trans- These include stable frequency, small size, high reli- mission to 10 Gbps are prime areas of usage today. ability, flexibility, many programmable features, fast guaranteed start-up, and high integration. FIGURE 1: Benefits of Microchip MEMS-Based Oscillators and Clocks. 2017 Microchip Technology Inc. DS00002344A-page 1 MICROCHIP RESONATOR quency of the beam and minimize vibrational energy TECHNOLOGY loss to the substrate. This, in turn, maximizes its quality factor and frequency selectivity. -
Piezoelectricity of Single-Atomic-Layer Mos2 for Energy Conversion and Piezotronics
LETTER doi:10.1038/nature13792 Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics Wenzhuo Wu1*, Lei Wang2*, Yilei Li3, Fan Zhang4, Long Lin1, Simiao Niu1, Daniel Chenet4, Xian Zhang4, Yufeng Hao4, Tony F. Heinz3, James Hone4 & Zhong Lin Wang1,5 The piezoelectric characteristics of nanowires, thin films and bulk The strain-induced polarization charges in single-layer MoS2 can also crystals have been closely studied for potential applications in sensors, modulate charge carrier transport at the MoS2–metal barrier and enable transducers, energy conversion and electronics1–3.Withtheirhighcrys- enhanced strain sensing. In addition, we have also observed large piezo- 4–6 tallinity and ability to withstand enormous strain , two-dimensional resistivity in even-layer MoS2 with a gauge factor of about 230 for the materials are of great interest as high-performance piezoelectric mate- bilayer material, which indicates a possible strain-induced change in band 18 rials. Monolayer MoS2 is predicted to be strongly piezoelectric, an structure . Our study demonstrates the potential of 2D nanomaterials effect that disappears in the bulk owing to the opposite orientations in powering nanodevices, adaptive bioprobes and tunable/stretchable of adjacent atomic layers7,8. Here we report the first experimental electronics/optoelectronics. study of the piezoelectric properties of two-dimensional MoS2 and In our experiments, MoS2 flakes were mechanically exfoliated onto show that cyclic stretching and releasing of thin MoS2 flakes with an a polymer stack consisting of water-soluble polyvinyl alcohol and poly odd number of atomic layers produces oscillating piezoelectric volt- (methyl methacrylate) on a Si substrate, with the total polymer thickness age and current outputs, whereas no output is observed for flakes with tuned to be 275 nm for good optical contrast. -
Microcontroller Oscillator Circuit Design Considerations by Cathy Cox and Clay Merritt
Freescale Semiconduct or, Inc... 2 CrystalOscillatorTheory 1 Introduction By CathyCoxandClayMerritt Considerations Microcontroller OscillatorCircuitDesign can beexpected,asignificantamountofpowerisrequiredtokeepanamplifierinlinearmode. digital NANDgateasananalogamplifierisnotlogical,butthishowoscillatorcircuitfunctions.As The voltageincreasesuntiltheNANDgateamplifiersaturates.Atfirstglance,thoughtofusinga energized, theloopgainmustbegreaterthanonewhilevoltageatXTALgrowsovermultiplecycles. overall loopgainequaltooneandanphaseshiftthatisintegermultipleof360 stabilize thefrequencyandsupply180 sists oftwoparts:aninvertingamplifierthatsuppliesavoltagegainand180 The Pierce-typeoscillatorcircuitshownin pitfalls. document istodevelopasystematicapproachgoodoscillatordesignandpointoutsomecommon ing crystalandmicrocontrollerfunctionswithoutthehelpofmatingspecifications.Theobjectivethis timing overawidetemperaturerangeusecrystaloscillator.PCBdesignershavethetaskofintegrat- The heartbeatofeverymicrocontrollerdesignistheoscillatorcircuit.Mostdesignsthatdemandprecise cy selectivefeedbackpath.ThecrystalcombinedwithC 1. 2.The M68HC11oscillatorcircuitpinsarelabeledXTALand EXTAL. forpowerconservation. STOP isaninternallygeneratedsignalthatdisablestheoscillator circuit EXTAL Cx STOP Figure 1PierceOscillator 2 ° phaseshiftfeedbackpath.Insteadystate,thiscircuithasan 1 Figure 1 Rf Y1 isusedonmostmicrocontrollers.Thiscircuitcon- x andC y formatunedPInetworkthattendsto XTAL Cy 2 ° phaseshiftandafrequen- Order thisdocument byAN1706/D ° . Uponbeing Freescale Semiconductor, -
CIRCUIT IDEAS for DESIGNERS Ultra Low Voltage Crystal Oscillator
Category: FET CIRCUIT IDEAS FOR DESIGNERS Schematic no. fet_11121.0 Ultra Low Voltage Crystal Oscillator Circuit using Active Loads Description This is an ultra low-voltage crystal oscillator circuit using EPAD MOSFETs with active load and output buffer. This circuit is similar to a standard crystal oscillator circuit used in 5V circuits. However, at low operating voltages, the values of the resistors and the impedance of the inverter MOSFET are selected to optimize oscillation stability and minimize power consumption. An active load device using a depletion mode EPAD MOSFET such as an ALD114804 replaces a passive resistor load at the inverter. Using appropriate component values, a crystal oscillator circuit can be configured to operate in the range of supply voltages from V+ = 5V to V+ = 0.5V, with crystal frequencies ranging from 1 MHz to 16 MHz. The active load reduces the contrast in the corresponding power consumption at different supply voltages. At V+= 5V the power consumed by the oscillator circuit is 346 µW whereas at V+= 0.5V, the same circuit consumes a mere 32 µW while oscillating at the same selected crystal frequency. At higher crystal frequencies in excess of 4 MHz, a dual EPAD MOSFET can be connected in parallel to provide more low voltage drive current necessary. Recommended Components EPAD MOSFETs: M1, M3 ALD110800 (either single or dual MOSFET connected in parallel); Active Load: M2 ½ ALD114904 CL1=10pF; CL2 = 22pF; RF= 5.6MOhm; RL= 6 Ohm; ROUT = 2.4KOhm Other Related Circuit Ideas Schematic no. fet_11120.0 Ultra Low Voltage Micropower Crystal Oscillator Circuit 2005 Advanced Linear Devices, Inc. -
EURO QUARTZ TECHNICAL NOTES Crystal Theory Page 1 of 8
EURO QUARTZ TECHNICAL NOTES Crystal Theory Page 1 of 8 Introduction The Crystal Equivalent Circuit If you are an engineer mainly working with digital devices these notes In the crystal equivalent circuit above, L1, C1 and R1 are the crystal should reacquaint you with a little analogue theory. The treatment is motional parameters and C0 is the capacitance between the crystal non-mathematical, concentrating on practical aspects of circuit design. electrodes, together with capacitances due to its mounting and lead- out arrangement. The current flowing into a load at B as a result of a Various oscillator designs are illustrated that with a little constant-voltage source of variable frequency applied at A is plotted experimentation may be easily modified to suit your requirements. If below. you prefer a more ‘in-depth’ treatment of the subject, the appendix contains formulae and a list of further reading. At low frequencies, the impedance of the motional arm of the crystal is extremely high and current rises with increasing frequency due solely to Series or Parallel? the decreasing reactance of C0. A frequency fr is reached where L1 is resonant with C1, and at which the current rises dramatically, being It can often be confusing as to whether a particular circuit arrangement limited only by RL and crystal motional resistance R1 in series. At only requires a parallel or series resonant crystal. To help clarify this point, it slightly higher frequencies the motional arm exhibits an increasing net is useful to consider both the crystal equivalent circuit and the method inductive reactance, which resonates with C0 at fa, causing the current by which crystal manufacturers calibrate crystal products.