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Storage Class Memory – the Future of Solid State Storage Storage Class Memory – the Future of Solid State Storage Phil Mills, IBM SNIA Director, Chair of Solid State Storage Initiative SNIA Legal Notice The material contained in this tutorial is copyrighted by the SNIA. Member companies and individual members may use this material in presentations and literature under the following conditions: Any slide or slides used must be reproduced in their entirety without modification The SNIA must be acknowledged as the source of any material used in the body of any document containing material from these presentations. This presentation is a project of the SNIA Education Committee. Neither the author nor the presenter is an attorney and nothing in this presentation is intended to be, or should be construed as legal advice or an opinion of counsel. If you need legal advice or a legal opinion please contact your attorney. The information presented herein represents the author's personal opinion and current understanding of the relevant issues involved. The author, the presenter, and the SNIA do not assume any responsibility or liability for damages arising out of any reliance on or use of this information. NO WARRANTIES, EXPRESS OR IMPLIED. USE AT YOUR OWN RISK. Storage Class Memory: The Future of Solid State Storage 2 © 2009 Storage Networking Industry Association. All Rights Reserved. Abstract Storage Class Memory the Future of Solid State Storage This tutorial describes 9 new technologies currently under development in research labs around the world that promise to replace today's NAND Flash technology. These new technologies - collectively called Storage Class Memory (SCM) - provide higher performance, lower cost, and more energy efficient solutions than today's SLC/MLC NAND Flash products. In this tutorial we extrapolate SCM technology trends to 2020 and analyze the impact on storage systems. The material is intended for those people that are closely watching the impact to the storage industry - brought about by NAND Flash - and want to understand what's next. Storage Class Memory: The Future of Solid State Storage 3 © 2009 Storage Networking Industry Association. All Rights Reserved. First – a plug for the SSSI SNIA Solid State Storage Initiative (www.snia.org/sssi) Foster the growth and success of solid state storage in both commercial and consumer environments Approximately 35 companies have joined since we formed last September Education is one of our major activities We have created a track of SNIA Tutorials for solid state storage Tuesday, 2:10-2:55pm, Overview and Current Topics in Solid State Storage, Rob Peglar, Xiotech Tuesday, 3:05-3:50pm, Solid Business, Shifting Vision: What Users can Expect from SSS in the next 2 Years, Woody Hutsell, Texas Memory Systems Tuesday, 4:00-4:45pm, Solid State Storage TCO Calculator, Terry Yoshii, Intel Tuesday, 4:55-5:40pm, Storage Class Memory: the Future of Solid State Storage, Phil Mills, IBM Wednesday, 4:55-5:40pm, Facing an SSS Decision? SNIA's Efforts to Evaluate SSS Performance, Khaled Amer, SNIA SSS TWG In addition, these Presentations were delivered yesterday morning Monday, 9:20-10:05am, Digital Storage for Professional Media and Entertainment, Tom Coughlin, Coughlin Associates Monday, 10:15-11:00am, SSD or HDD? How to Get the Benefits of Both with Dynamic Tiering, Ronald P Bianchini, Avere Systems Monday, 11:10-11:55am, Solid State Drives a Shining Storage Star for Data Centers, Brian Beard, Samsung Also, check out the Solid State Storage Summit and the Solid State Storage Hands-on-Lab Storage Class Memory: The Future of Solid State Storage 4 © 2009 Storage Networking Industry Association. All Rights Reserved. System Evolution Logic Memory Active Storage Archival 1980 CPU RAM DISK TAPE fast, synch slow, asynch 2009 FLASH CPU RAM SSD DISK TAPE 2013+ CPU RAM SCM DISK TAPE Storage Class Memory: The Future of Solid State Storage 5 © 2009 Storage Networking Industry Association. All Rights Reserved. Definition of Storage Class Memory A new class of data storage/memory devices many technologies compete to be the ‘best’ SCM SCM blurs the distinction between MEMORY (fast, expensive, volatile ) and STORAGE (slow, cheap, non-volatile) SCM features: Non-volatile Short Access times (~ DRAM like ) Low cost per bit (DISK like – by 2020) Solid state, no moving parts Storage Class Memory: The Future of Solid State Storage 6 © 2009 Storage Networking Industry Association. All Rights Reserved. Storage Class Memory Speed A solid-state memory that blurs the boundaries between storage and memory by being Memory-type Storage-type low-cost, fast, and non-volatile. uses uses Power! (Write) Cost/bit Endurance SCM system requirements for Memory (Storage) apps • No more than 3-5x the Cost of enterprise HDD (< $1 per GB in 2012) • <200nsec (<1μsec) Read/Write/Erase time • >100,000 Read I/O operations per second • >1GB/sec (>100MB/sec) • Lifetime of 109 – 1012 write/erase cycles • 10x lower power than enterprise HDD Storage Class Memory: The Future of Solid State Storage 7 © 2009 Storage Networking Industry Association. All Rights Reserved. B-3 Criteria to Judge an SCM Technology Device Capacity [GB] Key Requirement: Cost [$/GB] - Data Integrity is a Given! Speed (Latency, R/W Access Time) [ns] Speed (Bandwidth, R/W) [GB/sec] Random/Block Access Write Endurance (#Writes before death) Read Endurance (#Reads before death) Data Retention Time [Years] Power Consumption [Watts] Reliability (MTBF) [Million hours] Volumetric Density [TB/liter] Power On/Off Transit Time [sec] Shock & Vibration [g-force] Temperature Resistance [oC] Radiation Resistance [Rad] Storage Class Memory: The Future of Solid State Storage 8 15 Criteria ! © 2009 Storage Networking Industry Association. All Rights Reserved. SCM Compared to Existing Technologies SRAM Cost NOR FLASH DRAM NAND FLASH HDD STORAGE CLASS MEMORY Performance Storage Class Memory: The Future of Solid State Storage 9 © 2009 Storage Networking Industry Association. All Rights Reserved. C-32 Density is Key Cost competition between IC, magnetic, and optical devices comes down to effective areal density. 2F 2F Critical Area Density Device feature-size F (F²) (Gbit /sq. in) Hard Disk 50 nm (MR width) 1.0 250 DRAM 45 nm (half pitch) 6.0 50 NAND (2 bit) 43 nm (half pitch) 2.0 175 NAND (1 bit) 43 nm (half pitch) 4.0 87 [Fontana:2004, web searches] Storage Class Memory: The Future of Solid State Storage © 2009 Storage Networking Industry Association. All Rights Reserved. 10 B-12 Cost Structure of Silicon-based Technology $100k / GB Cost determined by $10k / GB NAND y cost per wafer $1k / GB y # of dies/wafer DRAM $100 / GB y memory area per die [sq. μm] $10 / GB Desktop y memory density HDD 2 [bits per 4F ] $1 / GB Enterprise y patterning density HDD [sq. μm per 4F2] $0.10 / GB $0.01 / GB 1990 1995 2000 2005 2010 2015 Chart courtesy of Dr. Chung Lam, IBM Research updated version Storage Class Memory: The Future of Solid State Storage 11 of plot from 2008 IBM Journal R&D article © 2009 Storage Networking Industry Association. All Rights Reserved. C-22 Candidate Device Technologies Improved Flash FeRAM (Ferroelectric RAM) MRAM (Magnetic RAM) – Racetrack Memory RRAM (Resistive RAM) – Memristor CMOx (Conductive Metal Oxide) Solid Electrolyte Phase Change Memory Storage Class Memory: The Future of Solid State Storage 12 © 2009 Storage Networking Industry Association. All Rights Reserved. B-27 Emerging SCM Technologies Memory technology remains an active focus area for the industry FLASH Solid FeRAM MRAM PCRAM RRAM Extension Electrolyte Trap Storage Ramtron IBM Ovonyx IBM Axon Saifun NROM Fujitsu Infineon BAE Sharp Infineon Tower STMicro Freescale Intel Unity Spansion TI Philips STMicro Spansion Infineon Toshiba STMicro Samsung Samsung Macronix Infineon HP Elpida Samsung Samsung NVE IBM Toshiba NEC Honeywell Macronix Spansion Hitachi Toshiba Infineon Macronix Rohm NEC Hitachi NEC HP Sony Philips Nano-x’tal Cypress Fujitsu 512Mb PCRAM Freescale Matsushita Renesas (Prototype) 0.1um 1.8V Matsushita Oki Samsung Hynix Hynix Celis TSMC Fujitsu Seiko Epson 4Mb MRAM (Product) 0.18um 3.3V 4Mb PCRAM (Product) 64Mb FeRAM (Prototype) Storage Class Memory: The Future of Solid State Storage 0.25um 3.3V 0.13um 3.3V © 2009 Storage Networking Industry Association. All Rights Reserved. 13 B-24 Candidate Device Technologies Improved Flash FeRAM (Ferroelectric RAM) MRAM (Magnetic RAM) – Racetrack Memory RRAM (Resistive RAM) – Memristor CMOx (Conductive Metal Oxide) Solid Electrolyte Phase Change Memory Storage Class Memory: The Future of Solid State Storage 14 © 2009 Storage Networking Industry Association. All Rights Reserved. B-27 Improved Flash Flash – based on the metal-oxide-silicon (MOS) transistor with redesigned “floating gate” Voltage threshold (Vth) is shifted by the charge near the gate, enabling non- volatile memory function Floating control gate Tunnel Gate e- e- Oxide source drain Tradeoff exists between scaling, speed, and endurance Designers are choosing to hold speed & endurance constant to continue scaling Storage Class Memory: The Future of Solid State Storage 15 © 2009 Storage Networking Industry Association. All Rights Reserved. Improved Flash… Data-retention requirements limit the tunnel oxide thickness (≤ 7nm) Unacceptable interference between adjacent memory devices occurs when spacing between word lines shrinks to ≤ 40nm Recent advances in metal gates and high-k dielectric materials research (SONOS, TANOS) have provided improvements in erase and retention characteristics Silicon-oxide-nitride-oxide-silicon (SONOS)
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