DOCSLIB.ORG

Spice Cmos Level-2, Level-4, and Bsim-Plus Model Files

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Spice Cmos Level-2, Level-4, and Bsim-Plus Model Files A SPICE CMOS LEVEL-2, LEVEL-4, AND BSIM-PLUS MODEL FILES Computer-aided design tools have become indispensable in the integrated­ circuit design. The SPICE (Simulation Program with Integrated Circuit Em­ phasis) program [1, 2] has been widely accepted for circuit analysis since its introduction a decade ago. Circuit simulation execution time has been substan­ tially reduced through algorithm improvement and hardware enhancements in the past few years. Device modeling plays an important role in VLSI circuit design because computer-aided circuit analysis results are only as accurate as the models used. The SPICE2G6.B and SPICE 3F.3 programs have provided six built-in MOS transistor models [3]-[10]. The LEVEL-1 model, which contains fairly simple expressions, is most suitable for preliminary analysis. The LEVEL-2 model, which contains expressions from detailed device physics, is widely used for the analysis of analog circuits. Its accuracy is quite limited when small-geometry transistors are used. The LEVEL-3 model represents an early attempt to pursue the semi-empirical modeling approach, which only approximates device physics and relies on the proper choice of the empirical parameters to accurately repro­ duce device characteristics. The LEVEL-4 model, which is also called BSIM (Berkeley Short-Channel IGFET Model), is ideal for the simulation of digital and analog circuits with effective channel lengths as small as 0.8 J.lm. The LEVEL-5 model, which supports more than 100 device parameters, requires special care to use and very elaborated parameter extraction. The LEVEL-6 model is based on the empirical nth power law and specially optimized for quick estimation of digital circuit behavior. In addition, the BSIM_plus model has been developed at University of Southern California. It is a greatly enhanced version over the original LEVEL-4 model. 513 514 ApPENDIX A The modeling equations for the LEVEL-2 model can be found in the books by P. Antognetti and G. Massobrio [11] and by D. Divekar [12]. A set of typical parameter values for the LEVEL-2 model is listed in Table A.I. These parameter values were extracted from a 2-J,Lm double-polysilicon p-well CMOS process. The test wafers were fabricated by Orbit Semiconductor Inc. through The MOSIS Service at USC/Information Sciences Institute. Table A.1 Typical parameter values for the LEVEL-2 model. parameters symbols n-channel p-channel unit vtho VTO 0.888 -0.738 V T01! TOX 3.9E-8 3.9E-8 m Xj XJ 2.0E-7 2.0E-7 m N6Ub NSUB 2.2E+16 5.8E+15 em-Oj ~f PHI 0.6 0.6 V ,\ LAMBDA 0.028 0.058 V-I J,Lo UO 585 273 em2 /V - S J,Lcrit UCRIT 121762 57420 V/em J,Le1!p UEXP 0.221 0.255 - 'Y GAMMA 0.952 0.518 V l / 2 Vma1! VMAX 72452 36876 m/s Ld LD 2.1E-7 2.4E-7 m Gj CJ 4.06E-4 2.05E-4 F/m2 Mj MJ 0.46 0.45 - Gj6W CJSW 4.17E-I0 2.34E-IO F/m Mj6w MJSW 0.35 0.32 - GGDO CGDO 2.69E-IO 3.0IE-10 F/m GGSO CGSO 2.69E-IO 3.0lE-10 F/m GGBO CGBO 2.00E-IO 2.00E-IO F/m The modeling equations for the LEVEL-4 model can be found in [4]-[6]. The format of the parameters is listed below. TRANSISTORS name L sens. factor W sens. factor units of basic parameter I VPB (VFB) VPBI (LVFB) VPBw (WVFB) V 2 <Ps (PHI) <PSI (LPHI) <Psw (WPHI) V SPICE CMOS LEVEL-2J LEVEL-4J and BSIM_plus Model Files515 3 Kl (Kl) KlI (LKl) K lw (WKl) vt 4 K2 (K2) K21 (LK2) K2w (WK2) 5 TJo (ETA) TJOI (LETA) TJow (WETA) 6 jJz (MUZ) dl (DL) dw (DW) cm2/V - s (jJm, jJm) 7 Uoz (UO) UOZI (LUO) Uozw (WUO) V-l 8 Ulz (Ul) UlZI (LUI) UlZw (WUl) jJmV- l 9 jJZB (X2MZ) jJZBI (LX2MZ) jJZBw (WX2MZ) cm2/V2 - s 10 TJB (X2E) TJBI (LX2E) TJBw (WX2E) V-l 11 TJD (X3E) TJDI (LX3E) TJDw (WX3E) V-l 12 UOB (X2UO) UOB/ (LX2UO) UOBw (WX2UO) V-2 13 UlB (X2Ul) UlBI (LX2Ul) UlBw (WX2Ul) jJmV-2 14 jJs (MUS) jJSI (LMS) jJSw (WMS) cm2/V2 - s 15 jJSB (X2MS) jJSBI (LX2MS) jJSBw (WX2MS) cm2/V2 - s 16 jJSD (X3MS) jJSDI (LX3MS) jJSDw (WX3MS) cm2/V2 - s 17 UlD (X3Ul) UlDl (LX3Ul) UlDw (WX3Ul) jJmV-2 18 Tor (TOX) Temp (TEMP) Vdd (VDD) jJm(OC,v) 19 CGDO CsubGSO CGBO P/m 20 XsubPART DUMI DUM2 21 No NOI Now 22 NB NB/ N Bw 23 ND NDI NDw INTERCONNECTS 1 R.h (RSH) Cj (CJ) Cjw (CJW) Ijs (IJS) Pj (PJ) 2 Pjw (PJW) M j (MJ) Mjw (MJW) Wdf (WDF) dl (DL) The names of the process parameters of transistors are listed below: VFB flat-band voltage rPs surface inversion potential K 1 body effect coefficient K2 drain/source depletion charge sharing coefficient TJo zero-bias drain-induced barrier lowering coefficient jJz zero-bias mobility Uoz zero-bias transverse-field mobility degradation coefficient Ulz zero-bias velocity saturation coefficient jJZB sensitivity of mobility to the substrate bias at Vd. = 0 TJB sensitivity of drain-induced barrier lowering effect to the substrate bias TJD sensitivity of drain-induced barrier lowering effect to the drain bias, at Vd.= Vdd 516 ApPENDIX A UOB sensitivity of transverse-field mobility degradation effect to the substrate bias U1B sensitivity of velocity saturation effect to the substrate bias J-Ls mobility at zero substrate bias and at Vd, = Vdd J-LSB sensitivity of mobility to the substrate bias at Vd, = Vdd J-LSD sensitivity of mobility to the drain bias at Vd, = Vdd UlD sensitivity of velocity saturation effect to the drain bias, at Vd,= Vdd Tox gate-oxide thickness Temp temperature at which the process parameters are measured Vdd measurement bias range No zero-bias subthreshold slope coefficient N B sensitivity of subthreshold slope to the substrate bias N D sensitivity of subthreshold slope to the drain bias CaDo gate-drain overlap capacitance per meter channel width Caso gate-source overlap capacitance per meter channel width CaBO gate-bulk overlap capacitance per meter channel length XPART gate-oxide capacitance model flag Note: XPART= 0, 0.5, and 1 selects the 40/60, 50/50, and 0/100 channel­ charge partitioning methods, respectively. The names of the process parameters of diffusion layers are listed below: sheet resistance/square R,h fJ/square zero-bias bulk junction bottom capacitance/unit area Cj F/m 2 zero-bias bulk junction sidewall capacitance/unit length Cjw F/m bulk junction saturation current/unit area lj. A/m2 bulk junction bottom potential Pj V bulk junction sidewall potential Pjw V bulk junction bottom grading coefficient M·J bulk junction sidewall grading coefficient Mjw default width of the layer Wdf m average reduction of size due to side etching or mask compensation m The names of the process parameters of poly and metal layers are listed as following: sheet resistance/square fJ/square capacitance/unit area F/m 2 edge capacitance/unit length F/m default width of the layer m SPICE CMOS LEVEL-2, LEVEL-4, and BSIM_plus Model Files517 average variation of size due to side etching or mask compensation m The following is an example of a parameter set from The MOSIS Service. The lines starting with "*,, are used as comments. NM1 PM1 DU1 DU2 ML1 ML2 *PROCESS=hp *RUN=n29z *WAFER=2 *Gate-oxide thickness= 176.0 angstroms *Geometries (W-drawn/L-drawn, units are f.lm/ f.lm) of transistors measured were: * 1.5/1.0,3.0/1.0,9.0/1.0,3.0/3.0, 3.0/9.0 *Bias range to perform the extraction (VDD) = 5 volts *DATE=02-11-93 *NMOS PARAMETERS -7.58998E-01, 2.14897E-02, 1.23152E-01 7.42201E-01, O.OOOOOE+OO, -2.83200E-24 8.90900E-01, -3.11958E-02, -3.54696E-01 7.88072E-02, 5.78136E-02, -1. 73583E-01 -2.99119E-03, 2.33191E-02, -1.70910E-02 5.54302E+02, 4.81357E-001, 4.75992E-001 1.01538E-01, 9.08377E-02, -9. 19324E-02 -9.93277E-03, 8.94698E-02, 8.29828E-03 8.86808E+00, -4.74779E+00, -4.92191E-01 -6.74775E-04, -4.16015E-03, 2.76833E-03 3.57104E-04, -1.45437E-03, 8.70530E-04 -2.91818E-04, -1. 71502E-03, -1. 70371E-03 2.87472E-04, 3.81244E-03, -5.70459E-03 5.96706E+02, 3.38649E+01, -1. 06304E+0 1 6.06875E-01, 8.52691E+00, -1.53784E+01 1.06405E+00, 7.52749E+00, -1.59711E+00 -1.46476E-04, 4.02165E-03, -2.18420E-03 1. 76000E-002, 2.70000E+01, 5.00000E+00 7.08322E-010, 7.08322E-010, 3.88315E-010 1.00000E+000, O.OOOOOE+OOO, O.OOOOOE+OOO 1.00000E+000, O.OOOOOE+OOO, O.OOOOOE+OOO 518 ApPENDIX A O.OOOOOE+OOO, O.OOOOOE+OOO, O.OOOOOE+OOO O.OOOOOE+OOO, O.OOOOOE+OOO, O.OOOOOE+OOO * Gate Oxide Thickness is 176 Angstroms *PMOS PARAMETERS -3.13668E-Ol, 7.71734E-02, -8.49659E-02 7.46549E-Ol, O.OOOOOE+OO, O.OOOOOE+OO 4.90935E-Ol, -1.06839E-Ol, 1.39901E-Ol -8.01381E-03, 4.93369E-03, 2.51322E-02 -1.17312E-02, 2.85411E-02, -1.52749E-03 1.78348E+02, 3.17007E-001, 4.86131E-001 1.57383E-Ol, 9.28071E-02, -9.12893E-02 -5.32992E-03, 4.19297E-02, 1.02423E-02 8.400 17E+00, -2.31231E+00, -3.92977E-Ol -1.
Load more

Recommended publications
  • Full-Wave Electromagnetic Modeling of Electronic Device Parasitics for Terahertz Applications
    Full-wave Electromagnetic Modeling of Electronic Device Parasitics for Terahertz Applications Dissertation Presented in Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy in the Graduate School of The Ohio State University By Yasir Karisan, B.S., M.S. Graduate Program in Electrical and Computer Engineering The Ohio State University 2015 Dissertation Committee: Kubilay Sertel, Advisor Patrick Roblin Fernando L. Teixeira Gary Kennedy c Copyright by Yasir Karisan 2015 Abstract The unique spectroscopic utility and high spatial resolution of terahertz (THz) waves offer a new and vastly unexplored paradigm for novel sensing, imaging, and communication applications, varying from deep-space spectroscopy to security screen- ing, from biomedical imaging to remote non-destructive inspection, and from ma- terial characterization to multi-gigabit wireless indoor and outdoor communication networks. To date, the THz frequency range, lying between microwave and in- frared bands, has been the last underexploited part of the electromagnetic (EM) spectrum due to technical and economical limitations of classical electronics- and optics-based system implementations. However, thanks to recent advancements in nano-fabrication and epitaxial growth techniques, sources and sensors with cutoff frequencies reaching the submillimeter-wave (sub-mmW) band are now realizable. Such remarkable improvement in electronic device speeds has been achieved mainly through aggressive scaling of critical device features, such as the junction area for Schottky barrier diodes (SBDs), and the gate length in high electron mobility tran- sistors (HEMTs). Such aggressively-scaled and refined device topologies can signif- icantly enhance the intrinsic device capabilities, however, the overall device perfor- mance is still limited by the parasitic couplings associated with device interconnect metallization.
    [Show full text]
  • Chapter 3: the MOS Transistor (Pdf)
    chapter3.fm Page 43 Monday, September 6, 1999 1:50 PM CHAPTER 3 THE DEVICES Qualitative understanding of MOS devices n Simple component models for manual analysis n Detailed component models for SPICE n Impact of process variations 3.1 Introduction 3.3.3 Dynamic Behavior 3.2 The Diode 3.3.4 The Actual MOS Transistor—Some Secondary Effects 3.2.1 A First Glance at the Diode — The 3.3.5 SPICE Models for the MOS Transistor Depletion Region 3.2.2 Static Behavior 3.4 A Word on Process Variations 3.2.3 Dynamic, or Transient, Behavior 3.5 Perspective: Technology Scaling 3.2.4 The Actual Diode—Secondary Effects 3.2.5 The SPICE Diode Model 3.3 The MOS(FET) Transistor 3.3.1 A First Glance at the Device 3.3.2 The MOS Transistor under Static Conditions 43 chapter3.fm Page 44 Monday, September 6, 1999 1:50 PM 44 THE DEVICES Chapter 3 3.1Introduction It is a well-known premise in engineering that the conception of a complex construction without a prior understanding of the underlying building blocks is a sure road to failure. This surely holds for digital circuit design as well. The basic building blocks in today’s digital circuits are the silicon semiconductor devices, more specifically the MOS transis- tors and to a lesser degree the parasitic diodes, and the interconnect wires. The role of the semiconductor devices has been appreciated for a long time in the world of digital inte- grated circuits. On the other hand, interconnect wires have only recently started to play a dominant role as a result of the advanced scaling of the semiconductor technology.
    [Show full text]
  • Mosfet Modeling & Bsim3 User's Guide
    MOSFET MODELING & BSIM3 USER’S GUIDE Yuhua Cheng Chenming Hu MOSFET MODELING & BSIM3 USER’S GUIDE This page intentionally left blank. MOSFET MODELING & BSIM3 USER’S GUIDE by Yuhua Cheng Conexant Systems, Inc. and Chenming Hu University of California, Berkeley KLUWER ACADEMIC PUBLISHERS NEW YORK, BOSTON , DORDRECHT, LONDON , MOSCOW eBook ISBN 0-306-47050-0 Print ISBN 0-792-38575-6 ©2002 Kluwer Academic Publishers New York, Boston, Dordrecht, London, Moscow All rights reserved No part of this eBook may be reproduced or transmitted in any form or by any means, electronic, mechanical, recording, or otherwise, without written consent from the Publisher Created in the United States of America Visit Kluwer Online at: http://www.kluweronline.com and Kluwer's eBookstore at: http://www.ebooks.kluweronline.com Contents Contents .................................................................................................. v Preface .................................................................................................... xiii Chapter 1 Introduction ......................................................................1 1.1 Compact MOSFET Modeling for Circuit Simulation....................................1 1.2 The Trends of Compact MOSFET Modeling.......................................................5 1.2.1 Modeling new physical effects ................................................................................5 1.2.2 High frequency (HF) analog compact models ........................................................6 1.2.3 Simulation
    [Show full text]
  • Neural-Based Models of Semiconductor Devices for SPICE Simulator
    American Journal of Applied Sciences 5 (4): 385-391, 2008 ISSN 1546-9239 © 2008 Science Publications Neural-Based Models of Semiconductor Devices for SPICE Simulator Hanene Ben Hammouda, Mongia Mhiri, Zièd Gafsi and Kamel Besbes Microelectronic and Instrumentation Laboratory (µEI), Monastir University, Tunisia Abstract: The paper addresses a simple and fast new approach to implement Artificial Neural Networks (ANN) models for the MOS transistor into SPICE. The proposed approach involves two steps, the modeling phase of the device by NN providing its input/output patterns, and the SPICE implementation process of the resulting model. Using the Taylor series expansion, a neural based small-signal model is derived. The reliability of our approach is validated through simulations of some circuits in DC and small-signal analyses. Keywords : Artificial Neural Networks, new semiconductor devices, SPICE, Modeling, Taylor series expansion. INTRODUCTION nonlinear input-output relationships [11-14] from corresponding measured or simulated data. Although the MOS (Metal Oxide Semi-conductor) Moreover, researches started investigating NN [1-2] transistor is not a recent semi-conductor device, it approaches to model transistor DC [15-19], small signal remains of a potential interest for large-scale Integrated [20-21], and large-signal [22-27] behaviors. Xiuping et al. Circuits (IC) due to its electrical properties. [28] have proposed an improved microwave active Owing to the rapid changes in semi -conductor device modeling technique based on the combination of technology, development of models to characterize the the equivalent circuit and ANN approaches. NN new transistor behaviors has become a continuous transistor models can be developed even if the device activity and an essential component of the design cycle.
    [Show full text]
  • Chapter II MOS Transistor Model and Layout Issues
    Chapter II MOS Transistor Modelling for MMW Circuits Chapter IIIIII MOS transistor model and layout issues One of the most important design issues in millimeter wave circuit design in modern MOS technologies is active devices and related parasitic elements modeling. The MOS transistor model that can be used in such high frequency must accurately comprise all of the unwanted parasitic effects that arise in high frequencies, as well as DC and low frequency characteristics. Professional circuit simulators and foundry design kits provide a complete environment for design, optimization and validation of different circuits, as well as layout tools. However due to many high frequency effects that arises in millimeter wave frequencies and have not been included in available RF design kits, millimeter wave circuit designers need to develop an individual simple design tool. This tools are used in pre-design analysis, design procedure and after-design diagnosis. Then the foundry design kit is used for final design evaluation and probably optimization, after some special considerations by the designer. In our work the problem is more sever, since the foundry design kit we are working with, is for 90 nm digital CMOS technology and does not provides any RF design facilities. Consequently we are obligated to develop our design and optimization tools, using the foundry design kit data and the foundry confidential Design Rule Manual (DRM). Then we should use the design kit with some special considerations for post-layout simulation and to evaluate the final design. Off course the parasitic extraction tools of the design kit are not useful for our work.
    [Show full text]
  • Semiconductor Device Modeling, Simulation, and Failure Prediction for Electrostatic Discharge Conditions
    University of Central Florida STARS Electronic Theses and Dissertations, 2004-2019 2019 Semiconductor Device Modeling, Simulation, and Failure Prediction for Electrostatic Discharge Conditions Hang Li University of Central Florida Part of the Electrical and Electronics Commons Find similar works at: https://stars.library.ucf.edu/etd University of Central Florida Libraries http://library.ucf.edu This Doctoral Dissertation (Open Access) is brought to you for free and open access by STARS. It has been accepted for inclusion in Electronic Theses and Dissertations, 2004-2019 by an authorized administrator of STARS. For more information, please contact [email protected]. STARS Citation Li, Hang, "Semiconductor Device Modeling, Simulation, and Failure Prediction for Electrostatic Discharge Conditions" (2019). Electronic Theses and Dissertations, 2004-2019. 6522. https://stars.library.ucf.edu/etd/6522 SEMICONDUCTOR DEVICE MODELING, SIMULATION AND FAILURE PREDICTION FOR ELECTROSTATIC DISCHARGE CONDITIONS by HANG LI B.S. Sichuan University, 2013 M.S. University of Central Florida, 2018 A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the Department of Electrical and Computer Engineering in the College of Engineering and Computer Science at the University of Central Florida Orlando, Florida Summer Term 2019 Major Professor: Kalpathy B. Sundaram © 2019 Hang Li ii ABSTRACT Electrostatic Discharge (ESD) caused failures are major reliability issues in IC industry. Device modeling for ESD conditions is necessary to evaluate ESD robustness in simulation. Although SPICE model is accurate and efficient for circuit simulations in most cases, devices under ESD conditions operate in abnormal status. SPICE model cannot cover the device operating region beyond normal operation.
    [Show full text]
  • Modeling Power Gan-Hemts Using Standard MOSFET Equations and Parameters in SPICE
    electronics Article Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE Utkarsh Jadli 1,* , Faisal Mohd-Yasin 1 , Hamid Amini Moghadam 1, Peyush Pande 2, Mayank Chaturvedi 1 and Sima Dimitrijev 1 1 Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane, QLD 4111, Australia; f.mohd-yasin@griffith.edu.au (F.M.-Y.); h.aminimoghadam@griffith.edu.au (H.A.M.); mayank.chaturvedi@griffithuni.edu.au (M.C.); s.dimitrijev@griffith.edu.au (S.D.) 2 Electronics Department, Graphic Era (Deemed to Be University), Dehradun, Uttarakhand 248002, India; [email protected] * Correspondence: utkarsh.jadli@griffithuni.edu.au Abstract: The device library in the standard circuit simulator (SPICE) lacks a gallium nitride based high-electron-mobility-transistor (GaN-HEMT) model, required for the design and verification of power-electronic circuits. This paper shows that GaN-HEMTs can be modeled by selected equations from the standard MOSFET LEVEL 3 model in SPICE. A method is proposed for the extraction of SPICE parameters in these equations. The selected equations and the proposed parameter-extraction method are verified with measured static and dynamic characteristics of commercial GaN-HEMTs. Furthermore, a double pulse test is performed in LTSpice and compared to its manufacturer model to demonstrate the effectiveness of the MOSFET LEVEL 3 model. The advantage of the proposed approach to use the MOSFET LEVEL 3 model, in comparison to the alternative behavioral-based model provided by some manufacturers, is that users can apply the proposed method to adjust the parameters of the MOSFET LEVEL 3 model for the case of manufacturers who do not provide SPICE models for their HEMTs.
    [Show full text]
  • Characterization and Modeling of Mosfets
    CORE Metadata, citation and similar papers at core.ac.uk Provided by ScholarBank@NUS CHARACTERIZATION AND MODELING OF MOSFETS FOR RF APPLICATIONS MAHALINGAM UMASHANKAR (B. E. (Hons.), Birla Institute of Technology and Science, Pilani) A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING NATIONAL UNIVERSITY OF SINGAPORE 2005 Acknowledgements I am grateful to my supervisors Assoc. Prof. Ganesh Shankar Samudra, National University of Singapore and Dr. Subhash Chander Rustagi, Institute of Microelectronics, for providing me with the valuable opportunity of conducting research under their supervision. I sincerely thank them for their able guidance, support and help throughout the course. I would like to thank Mr. Navab Singh, Institute of Microelectronics, for his help in process simulations and Mr. Arivazhagan Nagarajan, Institute of Microelectronics, for assisting me with workstation and software requirements. I would like to thank Ms. Tan Shane Yin Selina, Institute of Microelectronics, for helping me with the die bonding process. I would like to thank Mr. Teo Seow Miang and Ms. Zheng Huan Qun, Signal Processing and VLSI design laboratory, National University of Singapore, for helping me with workstation requirements to carry out simulations. Special thanks to the National University of Singapore for supporting me with a graduate research scholarship and to the Institute of Microelectronics, Singapore, for granting me an attachment and providing me with the requisite lab facilities for conducting this research. I thank my friends in the Signal Processing and VLSI design laboratory, National University of Singapore, whose association made for an enjoyable research experience. Finally, I thank my parents, for their constant encouragement, understanding and blessings towards my endeavor.
    [Show full text]
  • Table of Contents
    Table of Contents Introduction 19 SwitcherCAD III Overview ............................................................................. 19 Hardware Requirements................................................................................ 20 Software Installation ...................................................................................... 20 License Agreement/Disclaimer...................................................................... 21 Modes of Operation 23 Overview........................................................................................................ 23 Synthesized Circuits ...................................................................................... 24 Application Note Circuits ............................................................................... 25 Example Circuits............................................................................................ 26 General Purpose Schematic Driven SPICE .................................................. 27 Externally Generated Netlists........................................................................ 28 Efficiency Report ........................................................................................... 29 Schematic Capture 31 Basic Schematic Editing................................................................................ 31 Label a node name........................................................................................ 35 Schematic Colors .........................................................................................
    [Show full text]
  • Advanced Breakdown Modeling for Solid-State Circuit Design
    Advanced Breakdown Modeling for Solid-State Circuit Design Vladimir Milovanovi´c Advanced Breakdown Modeling for Solid-State Circuit Design PROEFSCHRIFT ter verkrijging van de graad van doctor aan de Technische Universiteit Delft, op gezag van de Rector Magnificus Prof. ir. K. C. A. M. Luyben, voorzitter van het College voor Promoties, in het openbaar te verdedigen op woensdag 7 juli 2010 om 10:00 uur door Vladimir MILOVANOVIC´ diplomirani inˇzenjer elektrotehnike van Univerzitet u Beogradu, Srbija, geboren te Smederevska Palanka, Srbija Dit proefschrift is goedgekeurd door de promotor: Prof. dr. L. K. Nanver Samenstelling promotiecommissie: Rector Magnificus voorzitter Technische Universiteit Delft Prof. dr. L. K. Nanver promotor Technische Universiteit Delft Dr. ir. R. van der Toorn copromotor Technische Universiteit Delft Prof. dr. ir. J. W. Slotboom Technische Universiteit Delft Prof. dr. J. R. Long Technische Universiteit Delft Prof. dr. P. Pejovi´c Univerzitet u Beogradu, Srbija Dr. D. B. M. Klaassen NXP Semiconductors, Eindhoven Dr. J. Victory Sentinel IC Technologies, California Prof. dr. E. Charbon reserve lid Technische Universiteit Delft Dr. S. Mijalkovi´cheeft als begeleider in belangrijke mate aan de totstandkoming van het proefschrift bijgedragen. Vladimir Milovanovi´c, Advanced Breakdown Modeling for Solid-State Circuit Design, PhD Thesis, Delft University of Technology. Keywords: avalanche, breakdown, circuit design, compact model, modeling, p-n junction, parameter extraction, statistical analysis, transistor, tunneling, Zener. ISBN: 978-90-8570-583-3 Copyright c 2010 by Vladimir Milovanovi´c All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or by any means without the prior written permission of the copyright owner.
    [Show full text]
  • Bipolar Junction Transistor
    9 Bipolar Junction Transistor 9.1 Ebers–Moll Model ............................................................................ 9-1 9.2 Gummel–Poon Model ...................................................................... 9-3 9.3 Current Gains of Bipolar Transistors ............................................9-5 9.4 High Current Phenomena ............................................................... 9-7 9.5 Small Signal Model ...........................................................................9-8 9.6 Technologies .................................................................................... 9-10 Integrated NPN Bipolar Transistor • Lateral and Vertical PNP Transistors 9.7 Model Parameters ........................................................................... 9-12 Bogdan M. Thermal Sensitivity • Second Order Effects • SPICE Model of the Wilamowski Bipolar Transistor Auburn University 9.8 SiGe HBTs ........................................................................................ 9-15 Operation Principle and Performance Advantages over Guofu Niu Si BJT • Industry Practice and Fabrication Technology Auburn University References ....................................................................................................9-20 ἀ e bipolar junction transistor (BJT) is historically the first solid-state analog amplifier and digital switch, and formed the basis of integrated circuits (IC) in the 1970s. Starting in the early 1980s, the MOSFET had gradually taken over; particularly for mainstream digital ICs.
    [Show full text]
  • Broadband Amplifiers for High Data Rates Using Inp/Ingaas Double
    Karl Schneider Broadband Amplifiers for High Data Rates using InP/InGaAs Double Heterojunction Bipolar Transistors Broadband Amplifiers for High Data Rates using InP/InGaAs Double Heterojunction Bipolar Transistors von Karl Schneider Dissertation, Universität Karlsruhe (TH) Fakultät für Elektrotechnik und Informationstechnik, 2006 Impressum Universitätsverlag Karlsruhe c/o Universitätsbibliothek Straße am Forum 2 D-76131 Karlsruhe www.uvka.de Dieses Werk ist unter folgender Creative Commons-Lizenz lizenziert: http://creativecommons.org/licenses/by-nc-nd/2.0/de/ Universitätsverlag Karlsruhe 2006 Print on Demand ISBN 3-86644-021-9 Broadband Amplifiers for High Data Rates using InP/InGaAs Double Heterojunction Bipolar Transistors Zur Erlangung des akademischen Grades eines DOKTOR-INGENIEURS von der Fakult¨at f¨ur Elektrotechnik und Informationstechnik der Universit¨at Fridericiana Karlsruhe genehmigte DISSERTATION von Dipl.-Ing. Karl Schneider aus Hannover Tag der m¨undlichen Pr¨ufung: 16. Januar 2006 Hauptreferent: Prof. Dr. rer. nat. G. Weimann Korreferent: Prof. Dr.-Ing. W. Wiesbeck Contents Kurzfassung 1 Abstract 2 1 Introduction 3 1.1Motivation.................................... 3 1.1.1 ScopeoftheWork........................... 5 1.2StateoftheArt................................. 6 1.2.1 BroadbandAmplifiers......................... 6 1.2.2 Devices................................. 7 2 InP-based Double Heterojunction Bipolar Transistor 11 2.1OperatingPrinciple............................... 12 2.2Technology..................................
    [Show full text]