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Full-Wave Electromagnetic Modeling of Electronic Device Parasitics for Terahertz Applications

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Full-Wave Electromagnetic Modeling of Electronic Device Parasitics for Terahertz Applications Full-wave Electromagnetic Modeling of Electronic Device Parasitics for Terahertz Applications Dissertation Presented in Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy in the Graduate School of The Ohio State University By Yasir Karisan, B.S., M.S. Graduate Program in Electrical and Computer Engineering The Ohio State University 2015 Dissertation Committee: Kubilay Sertel, Advisor Patrick Roblin Fernando L. Teixeira Gary Kennedy c Copyright by Yasir Karisan 2015 Abstract The unique spectroscopic utility and high spatial resolution of terahertz (THz) waves offer a new and vastly unexplored paradigm for novel sensing, imaging, and communication applications, varying from deep-space spectroscopy to security screen- ing, from biomedical imaging to remote non-destructive inspection, and from ma- terial characterization to multi-gigabit wireless indoor and outdoor communication networks. To date, the THz frequency range, lying between microwave and in- frared bands, has been the last underexploited part of the electromagnetic (EM) spectrum due to technical and economical limitations of classical electronics- and optics-based system implementations. However, thanks to recent advancements in nano-fabrication and epitaxial growth techniques, sources and sensors with cutoff frequencies reaching the submillimeter-wave (sub-mmW) band are now realizable. Such remarkable improvement in electronic device speeds has been achieved mainly through aggressive scaling of critical device features, such as the junction area for Schottky barrier diodes (SBDs), and the gate length in high electron mobility tran- sistors (HEMTs). Such aggressively-scaled and refined device topologies can signif- icantly enhance the intrinsic device capabilities, however, the overall device perfor- mance is still limited by the parasitic couplings associated with device interconnect metallization. Consequently, geometry- and material-dependent parasitic couplings, ii induced by EM field interactions within the device structure, exacerbate the perfor- mance and diminish the gains achieved by the improved intrinsic device behavior. In particular, as the operation frequency approaches the THz barrier, device dimensions become comparable to signal wavelength. The main objective of this dissertation is to develop accurate lumped- and distributed- element equivalent circuits, and full-wave EM simulation-based iterative parameter extraction algorithms, to accurately model the extrinsic parasitics of electronic de- vices at THz frequencies. First, we demonstrate and characterize the EM coupling effects that restrict the THz detection and mixing performance of zero-bias surface- channel sub-mmW SBDs. This is achieved by a distributed equivalent circuit model to account for the wave propagation phenomena along the device air bridge in the 10 GHz - 1.1 THz band. The major power dissipation mechanisms of THz Schottky barrier diodes, including semiconducting substrate losses, leaky passivation dielectric losses, conductive metallization losses, and losses due to increased series resistance of epitaxial and buffer layers are incorporated into the proposed equivalent circuit model. Based on this new \parasitic-aware" circuit model, we present a novel multi-step sys- tematic parameter extraction algorithm. The accuracy of the developed extraction procedure is validated through comparisons with the experimental data reported in the literature. More importantly, the shortcomings of conventional lumped-element circuits for THz diode modeling and the broadband accuracy achieved by the pro- posed distributed circuit model are illustrated through comparisons with full-wave simulated frequency response of the device in THz band. Key parasitic components that are most detrimental to the performance are identified, and a method to optimize device performance using the equivalent circuit model is demonstrated. In addition, iii we demonstrate over 10 dB improvement in conversion efficiency for a diode-based single-ended passive mixer at 1 THz through optimization of diode geometry. We next focus on three-terminal devices, and utilize full-wave EM simulation tools for characterization of extrinsic parasitics of millimeter-wave (mmW) HEMTs. Subsequently, we develop a lumped-element parasitic equivalent circuit model for HEMTs in the mmW band. Based on this lumped circuit model, we develop a new multi-step systematic model extraction algorithm to determine the components of the equivalent circuit. For the first time, an analytical procedure for measurement- based estimation of gate-to-drain mutual inductance is developed. We also show that this mutual inductance is detrimental to device operation due to the inductive feedback path it creates at mmW frequencies. The accuracy and robustness of the suggested algorithm are verified through comparisons between simulated, measured, and modeled frequency responses of the designed test standards up to 325 GHz. As such, we show that the proposed lumped parasitic equivalent circuit achieves broadband accuracy in mmW band. The adverse impacts of EM interactions on gain and noise performance are also evaluated. Major parasitic components that are most detrimental to the mmW performance are identified, and conveniently optimized via subsequent circuit analysis. As a result, design guidelines are provided for optimum device geometry to achieve the maximum speed and best noise performance. We also demonstrate via full-wave EM simulations that around 20% improvement in maximum oscillation frequency, 20% reduction in minimum noise figure, and 10% increase in associated power gain at 20 GHz are concurrently achievable through optimization of number of gate fingers, and gate finger width. iv To further expand the equivalent circuit of HEMTs beyond the mmW band into THz frequencies, we present a distributed parasitic equivalent circuit model to account for the wave propagation effects along the gate width of HEMTs. This is achieved by developing a multi-step systematic parameter extraction algorithm, which accounts for the external parasitics of device metallization, that are comparable in size to operating wavelength. The accuracy of the proposed extraction procedure is again validated through full-wave (FW) simulations, measurements, and circuit model re- sponses up to 750 GHz. This distributed HEMT model is utilized to evalute the adverse impact of extrinsic parasitic couplings on device speed and noise perfor- mance. Key parasitic components are identified, and redesigned using the equivalent distributed circuit. As a result, design guidelines are developed for optimum device layout selection to accomplish the highest speed and noise performance. As an ex- ample, we demonstrate 10% improvement in maximum oscillation frequency, 10% reduction in minimum noise figure, and 5% increase in associated power gain at 50 GHz via optimization of device gate finger number, and unit finger width. This dissertation demonstrates the utility of full-wave EM simulation tools as an alternative to fabrication and measurement-based equivalent circuit models. As such, the proposed approach is a convenient and cost-effective solution to the problem of device modeling in THz frequency range. Through the proposed full-wave EM simulation-based characterization and performance optimization methodology, RF engineers can determine the optimum layout for the diodes and transistors used in a variety of integrated circuit applications, including low-noise amplifiers, voltage- controlled oscillators, power amplifiers, and mixers. v Dedicated to my mother... vi Acknowledgments I would like to express my gratitude for my advisor Prof. Kubilay Sertel for his continuous guidance and encouragement throughout my doctoral study. I have learned a tremendous amount from his personal and professional enthusiasm towards success. I consider it as a privilege to have been his student. I would like to extend my respect and appreciation to my committee members Prof. Fernando L. Teixeira, and Prof. Patrick Roblin for reviewing my work and providing helpful comments. I also have had the opportunity of working alongside a number of close friends and colleagues at The ElectroScience Laboratory. In particular, I would like to acknowl- edge the sincere friendship of Cosan Caglayan, Georgios C. Trichopoulos, Kagan Topalli, Ersin Yetisir, Mustafa Aksoy, Ugur Olgun, Mustafa Kuloglu, Erdinc Irci, Nil Apaydin, Sai Tenneti, Shahriar Rashid, Moataz Abdelfattah, Anas Abumunshar, Shubhendu Bhardwaj, Woon Gi Yeo, Aseim Elfrgani, Ezdeen Elghanai, Ray Febo, Dimitrios Papantonis, Seckin Sahin, Kamalesh Sainath, Safa Salman, Varittha San- phuang, Syed An Nazmus Saqueb, and Rashedul Alam Zuboraj. Most importantly, I am so grateful to my mother, whose unconditional and endless love, support, and patience made dreams come true. vii Vita 2008 . B.S. Electrical and Electronics Eng., Koc University, Turkey 2008 . B.S. Computer Science, Koc University, Turkey 2010 . M.S. Electrical and Electronics Eng., Signal Processing & Communications, Bilkent University, Turkey 2014 . M.S. Electrical and Computer Eng., Circuits & Electromagnetics, The Ohio State University, USA 2010-present . .Graduate Research Associate, ElectroScience Laboratory, Electrical and Computer Eng., The Ohio State University Publications Research Publications 1. Y. Karisan, and K. Sertel, \Methodology for Distributed Model Extraction of Submillimeter-Wave Diode Parasitics Based on Full-Wave Electromagnetic Analysis," submitted to IEEE Transactions on Terahertz
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