Special Materials for Precision Optics & Laser Coatings Oxides For

Total Page:16

File Type:pdf, Size:1020Kb

Special Materials for Precision Optics & Laser Coatings Oxides For Special materials for Precision Optics & Laser Coatings Oxides for Evaporation Special materials for Precision Optics & Laser Coatings Titanium oxides › Highest refractive index of oxides in visible range › AR and multilayer coatings on glass and polymers › Best reproducibility by using Ti3O5 › Stable evaporation behaviour without spitting or outgassing › High UV-blockage and low thermal substrate load for coatings on plastics Film properties Application Guidelines Refractive index at 550 nm Characteristics of starting material › on unheated substrates/no IAD 2.07 – 2.22 Chemical formula TiO Ti O Ti O TiO , TiO Ti metal › on heated substrates, T = 250 °C/no IAD 2.25 – 2.40 2 3 3 5 2-X 2 S Color Gold Purple Black-purple Black, white Grey › on unheated substrates/with IAD 2.10 – 2.50 Density g/cm3 4.9 4.6 4.6 4.2 4.5 Range of transparency (fully oxidized film) 400 nm – 11 µm Melting point °C 1750 ~ 1760 ~ 1760 1775 1668 Delivery form Tablets, granulate On request Environmental Stability MIL-C-675 B/C Stress Evaporation technique › on unheated substrates/no IAD Tensile › on heated substrates, TS ≥ 250 °C/no IAD Tensile All titanium oxides melt completely. Only the Ti3O5 melt evaporates › on unheated substrates/with IAD Type and magnitude congruently. Titanium oxides are deposited reactively by electron beam depending on IAD parameters evaporation with a Cu-crucible and Mo-liner or from W-boats. Data based on TiO2 coatings deposited from Ti3O5 starting material. Typical deposition in all sizes of coating systems involves rates of 0.2 – 0.5 nm/s at O pressures of 2 – 3 x 10-4 mbar (or equivalent O flow). Low-absorbing films deposited from all titanium oxide starting compositions 2 2 For the intended variation of refractive index and film stress, substrate are of the composition TiO . The structure of the TiO films depends on the 2 2 temperature, oxygen pressure or flow, deposition rate and the parameters deposition conditions and starting materials ranging from amorphous to of ion assistance can be employed. O -operated RF plasma ion sources are crystalline anatase or rutile. This explains the wide spread in the refractive 2 able to produce high-dense TiO2 films with full stress compensation relative index values. TiO2 films have the highest and most widely tunable refractive to SiO2. index in the visible range of all oxides with the best optical contrast to SiO2. TiO2 films effectively block UV-radiation for wavelengths < 400 nm which can be used for the protection of coated polymeric substrates. The stress of Application fields TiO films can be tuned in a wide range of tensile and compressive values. 2 AR and multilayer coatings (dielectric mirrors, dichroics, narrowband The compensation of the SiO compressive stress for common deposition 2 filters, polarizers, beamsplitters) for VIS and IR spectral range, coatings for conditions along with the high index contrast favours the use of TiO films 2 precision optics and on plastics, to a lesser extent for laser coatings. in AR and multilayer coatings with a minimum number of layers. Using Ti3O5 starting material, thermal stresses on polymers can be reduced making this material additionally an ideal choice for coatings on plastic substrates. 2.80 2.70 Ts = 280 °C, conventional Ts = 70 °C, IAD 2.60 Ts = 70 °C, conventional 2.50 2.40 2.30 Refractive index n 2.20 2.10 2.00 350 400 450 500 550 600 650 700 750 800 850 900 Wavelength [nm] Typical dispersion of the refractive index for the indicated deposition conditions. Special materials for Precision Optics & Laser Coatings DRALO™ › Reduced refractive index compared to pure TiO2 enabling a higher AR bandwidth › Effective protection against UV radiation › Widely tunable film stress from tensile to compressive values › Reduced structural film stress compared to pure TiO2 › Optimized thermal film stress on plastics compared to pure TiO2 › Very good thickness homogeneity and run-to-run stability › Excellent environmental durability › Very good resistance against combined attack of heat, humidity and UV-radiation › Controlled water barrier Film properties Application Guidelines Refractive index at 550 nm Characteristics of starting material › on unheated substrates/no IAD 2.04 – 2.18 Chemical formula Ti-Al-oxide › on heated substrates, T ≥ 250 °C/no IAD 2.26 – 2.28 S Color Black metallic › on unheated substrates/with IAD 2.05 – 2.30 Density g/cm3 4.5 Range of transparency (fully oxidized film) 400 nm – 7.0 µm Melting point °C 1700 Delivery form Granulate Environmental Stability MIL-C-675 B/C passed Stress Evaporation technique › on unheated substrates/no IAD Mostly tensile depending on rate and O2 pressure DRALO™ films can be produced by reactive electron beam evaporation using › on heated substrates, TS ≥ 250 °C/no IAD Tensile Cu-crucibles with Mo-liners. Typical deposition in all sizes of coating systems -4 › on unheated substrates/with IAD Type depending on IAD involves O2 pressures of ~3 x 10 mbar (or equivalent O2 flow) and rates parameters 0.2 – 0.4 nm/s. The intended values of refractive index and film stress can be obtained by variation of substrate temperature, oxygen pressure or flow, These properties make DRALO™ layers especially well-suited as the deposition rate and the parameters of ion assistance. high-index material in precision optics. Using DRALO™ instead of pure titanium oxides requires to follow some particular guidelines to obtain reproducible, well-homogeneous films. Application fields AR and multilayer coatings in precision optics. 2.80 2.70 Ts = 280 °C, conventional Ts = 70 °C, IAD 2.60 Ts = 70 °C, conventional 2.50 2.40 2.30 2.20 2.10 Refractive index n 2.00 1.90 1.80 350 400 450 500 550 600 650 700 750 800 850 900 Wavelength [nm] Typical dispersion of the refractive index of DRALO™ films for the indicated deposition conditions. IAD parameters for coatings on plastic substrates. 02 | 03 Special materials for Precision Optics & Laser Coatings Niobium oxides › High refractive index oxide material for AR and multilayer coatings › High-temperature resistant films Film properties Application Guidelines Refractive index at 550 nm Characteristics of starting material › on unheated substrates/with IAD 2.27 – 2.31 Availability as niobium pentoxide with a minor deficiency x of oxygen › on heated substrates, TS ≥ 300 °C 2.29 – 2.33 Nb2O5-X. Range of transparency 380 nm – 8.0 µm Chemical formula Nb2O5-X Environmental Stability MIL-C-675 B/C passed Color Black metallic Density g/cm3 6.1 – 6.2 Stress Melting point °C 1512 › on unheated substrates/with IAD Tunable type and magnitude Delivery form Granulate › on heated substrates, TS ≥ 300 °C Tensile Thin films made from Nb O source material have a refractive index in 2 5-X Evaporation technique the range of 2.27 – 2.33 at 550 nm and a low absorbance over the whole VIS and near-IR region for a suitable deposition process or post-depositon Nb2O5-X source material has an excellent melting and evaporation behaviour procedure. This makes Nb2O5 layers especially well-suited as H-index without spitting or outgassing. materials in AR coatings and filters. Nb2O5 films can be produced from Nb2O5-X granulate or disks by reactive The excellent thermal and long-term stability of films deposited at high e-beam evaporation. For the intended variation of refractive index and film substrate temperatures or with plasma ion assistance make this material stress, substrate temperature, oxygen pressure or flow, deposition rate and furthermore a good choice for thermally loaded optical applications such the parameters of ion assistance can be employed. as heat protection filters and lighting (e.g. cold light mirrors). Low-absorbance films can be obtained either at low substrate temperatures The exact characteristics of individual films depend on the respective with a post-deposition thermal treatment or by plasma or ion assistance evaporation conditions such as substrate temperature, oxygen pressure, or for substrate temperatures > 300 °C with oxygen pressures of deposition rate, possibly ion assistance parameters. 2.0 – 6.0 x 10-4 mbar or equivalent flow. Typical deposition in all sizes of coating systems involves rates 0.2 – 0.7 nm/s. Application fields AR and multilayer coatings (dielectric mirrors, heat protection filters, dichroics, narrowband filters, polarizers, beamsplitters) for VIS to IR spectral range. Occasional use in pure or mixed form for electrochromic coatings. 2.70 Ts = 280 °C, conventional, BAK640 2.60 Ts = 70 °C, IAD, APS 100 – 160 V 2.50 2.40 2.30 2.20 Refractive index n 2.10 2.00 400 500 600 700 800 900 1000 Wavelength [nm] Typical dispersion of the refractive index for the indicated deposition conditions. Special materials for Precision Optics & Laser Coatings Tantalum oxides › High refractive index material with high laser damage resistance › Hard and durable films › Moisture blocking and increased climate resistance › Lithographically structurable films Film properties Application Guidelines Refractive index at 550 nm Characteristics of starting material › on unheated substrates/with IAD (O2) 2.07 – 2.17 Availability as Ta2O5, Ta2O5-X with minor deficiency x of oxygen or RENA TaOy. › on unheated substrates/with IAD (Ar+O2) 2.07 – 2.18 › on heated substrates, TS = 300 °C 2.12 – 2.13 Chemical formula Ta2O5 Ta2O5-X RENA TaOy Color White Grey-black Dark grey – metallic Range of transparency 300 nm – 10 µm Density 8.3 ~ 8.3 8.8 Environmental Stability MIL-C-675 B/C passed Melting point °C 1880 < 1880 < 1880 Delivery form Tablets, granulate, discs Stress › on unheated substrates/with IAD (O2) Compressive › on unheated substrates/with IAD (Ar+O2) Tunable type and magnitude Evaporation technique › on heated substrates, T ≥ 300 °C Tensile S Tantalum oxides are commonly evaporated by reactive e-beam evaporation Low-absorbing films deposited in appropriate conditions from all tantalum from a Cu-crucible or with Mo-liner.
Recommended publications
  • Us 2016/0017536A1 Tang
    US 2016.0017536A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2016/0017536A1 TANG. et al. (43) Pub. Date: Jan. 21, 2016 (54) A TREATMENT PLATE FORA GARMENT (30) Foreign Application Priority Data TREATMENT APPLIANCE Apr. 2, 2013 (EP) .................................. 13161937.1 (71) Applicant: both the PHILIPS N.V., Publication Classification (51) Int. Cl. (72) Inventors: JIECONGTANG, EINDHOVEN (NL); D6F 75/38 (2006.01) YTSEN WIELSTRA, EINDHOVEN B5D3/00 (2006.01) (NL); YA LINGLEE, EINDHOVEN BOSDI/02 (2006.01) (NL); SABRINA MAY FONG KHOO, (52) U.S. Cl. EINDHOVEN (NL); LIHONG ZHAO, CPC D06F 75/38 (2013.01); B05D 1/02 (2013.01); EINDHOVEN (NL) B05D3/007 (2013.01) (57) ABSTRACT (73) Assignee: Koninklijke Philips N.V., Eindhoven The invention relates to a treatment plate (10) for a garment (NL) treatment appliance (100) for treating garments (30), which plate has a contact surface which is provided with a sol-gel (21) Appl. No.: 14/764,015 coating (20) that comprises an oxide of titanium, Zirconium, hafnium, Scandium, yttrium, or a mixture or combination (22) PCT Filed: Jan. 23, 2014 thereof. The layer preferably has a thickness of less than 1 lum. Such a layer shows excellent properties. A garment treatment (86). PCT No.: PCT/EP2014/051281 appliance comprising Such a treatment plate, as well as pro S371 (c)(1), cesses to produce the coating on the contact Surface of the (2) Date: Jul. 28, 2015 treatment plate are also disclosed. 1OO Patent Application Publication Jan. 21, 2016 Sheet 1 of 3 US 2016/0017536A1 E Patent Application Publication Jan.
    [Show full text]
  • Scandium Oxide Thin Films and Their Optical Properties in the Extreme Ultraviolet
    Brigham Young University BYU ScholarsArchive Theses and Dissertations 2007-11-30 Scandium Oxide Thin Films and Their Optical Properties in the Extreme Ultraviolet Guillermo Antonio Acosta Brigham Young University - Provo Follow this and additional works at: https://scholarsarchive.byu.edu/etd Part of the Astrophysics and Astronomy Commons, and the Physics Commons BYU ScholarsArchive Citation Acosta, Guillermo Antonio, "Scandium Oxide Thin Films and Their Optical Properties in the Extreme Ultraviolet" (2007). Theses and Dissertations. 1285. https://scholarsarchive.byu.edu/etd/1285 This Dissertation is brought to you for free and open access by BYU ScholarsArchive. It has been accepted for inclusion in Theses and Dissertations by an authorized administrator of BYU ScholarsArchive. For more information, please contact [email protected], [email protected]. SCANDIUM OXIDE THIN FILMS AND THEIR OPTICAL PROPERTIES IN THE EXTREME ULTRAVIOLET by Guillermo Acosta A dissertation submitted to the faculty of Brigham Young University in partial fulfillment of the requirements for the degree of Doctor of Philosophy Department of Physics and Astronomy Brigham Young University December 2007 BRIGHAM YOUNG UNIVERSITY GRADUATE COMMITTEE APPROVAL of a dissertation submitted by Guillermo Acosta This dissertation has been read by each member of the following graduate committee and by a majority vote has been found to be satisfactory. Date David D. Allred, Chair Date R. Steven Turley Date Lawrence B. Rees Date Richard Vanfleet Date Branton Campbell BRIGHAM YOUNG UNIVERSITY As chair of the candidate’s graduate committee, I have read the dissertation of Guillermo Acosta in its final form and have found that (1) its format, citations, and bibliographical style are consistent and acceptable and fulfill university and department style requirements; (2) its illustrative materials including figures, tables, and charts are in place; and (3) the final manuscipt is satisfactory to the graduate committee and is ready for submission to the university library.
    [Show full text]
  • Structural and Optical Properties of Yttrium Oxide Thin Films for Planar Waveguiding Applications
    Structural and optical properties of Yttrium Oxide thin films for planar waveguiding applications Stuart J. Pearce,a) Greg J. Parker,a) Martin D.B. Charlton,a) and James S. Wilkinson b) a) Electronic and Computer Science, Southampton University, SO17 1BJ b) Optoelectronics Research Center, Southampton University, SO17 1BJ Thin films of Yttrium Oxide, Y2O3 were deposited by reactive sputtering and reactive evaporation to determine their suitability as a host for a rare earth doped planar waveguide upconversion laser. The optical properties, structure and crystalline phase of the films were found to be dependent on the deposition method and process parameters. X-ray diffraction (XRD) analysis on the ‘as-deposited’ thin films revealed that the films vary from amorphous to highly crystalline with a strong peak along the <222> plane of Y2O3. The samples with the polycrystalline structure had a stoichometry close to bulk cubic Y2O3. SEM imaging revealed a regular column structure confirming their crystalline nature. The thin film layers which allowed guiding in both the visible and infra-red region had lower refractive indices, higher oxygen content and had a more amorphous structure. Higher oxygen pressures during the deposition leads to a more amorphous layer. PACS numbers: 68.55. J-, 78.66. -w, 81.15. -z, 42.82.Et, 78.20. -e INTRODUCTION Recently there has been considerable interest in fabrication and characterization of waveguide layers as solid-state laser host materials for use as optical amplifiers in telecommunications. These include Aluminum Oxide,1 Zirconium Oxide,2 Titanium Oxide,3 Scandium Oxide,4 and Yttrium Oxide.5-7 Planar waveguide lasers made with rare earth doped thin films are a desirable method to achieve high optical gain in a small and compact device.5 In selecting the most suitable material for a rare earth doped solid state waveguide laser, desirable properties for a host material include: low optical loss, low peak phonon energy, ability to be easily doped, and ability to waveguide at the pump and emission wavelengths.
    [Show full text]
  • Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices
    Materials 2012, 5, 1297-1335; doi:10.3390/ma5071297 OPEN ACCESS materials ISSN 1996-1944 www.mdpi.com/journal/materials Review Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices Rathnait D. Long * and Paul C. McIntyre Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA; E-Mail: [email protected] * Author to whom correspondence should be addressed; E-Mail: [email protected]. Received: 12 May 2012; in revised form: 10 July 2012 / Accepted: 16 July 2012 / Published: 24 July 2012 Abstract: The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS) devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology. Keywords: GaN growth; oxides; high-κ, surfaces; treatments; interface; ALD 1.
    [Show full text]
  • Yttrium and Scandium in Solution‐Processed Oxide Electronic Materials
    Yttrium and Scandium in Solution‐processed Oxide Electronic Materials by Wenbing Hu A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Electrical Engineering) in the University of Michigan 2016 Doctoral Committee: Assistant Professor Becky (R. L.) Peterson, Chair Professor Wei Lu Associate Professor Emmanuelle Marquis Professor Jamie D. Phillips Associate Professor Zhaohui Zhong © 2016 Wenbing Hu All rights reserved Dedication To my mom and dad, for their unconditional love. ii Acknowledgments I would like to express my most sincere gratitude to my research advisor Assistant Professor Becky Peterson. She introduced me to the field of solution‐processed metal oxide electronic materials, and guided me from the beginning with precision, kindness, patience and encouragement. She herself also sets a good example as an active and hardworking scholar. Throughout my grad school, I kept learning from her the methodology and the skills to become a better scholar. Not only is she a great mentor in research, but she is also a wonderful guide in life and an awesome friend. She is one of the people who have the most influence on me. I would also like to thank my doctoral committee members: Professor Wei Lu, Associate Professor Emmanuelle Marquis, Professor Jamie D. Phillips, Associate Professor Zhaohui Zhong and my former committee member, Associate Professor Kevin Pipe, for all the precious insights from them to help improve the quality of my research and thesis. I thank National Science Foundation, Samsung and University of Michigan for their financial support. I specially thank Professor Khalil Najafi, Mr. Robert Gordenker and all the Najafi group students for their great support in the early years of my grad school.
    [Show full text]
  • Thermal Atomic Layer Deposition of Yttrium Oxide Films and Their Properties in Anticorrosion and Water Repellent Coating Applications
    coatings Article Thermal Atomic Layer Deposition of Yttrium Oxide Films and Their Properties in Anticorrosion and Water Repellent Coating Applications Christian Dussarrat 1,*, Nicolas Blasco 2, Wontae Noh 3, Jooho Lee 3, Jamie Greer 1, Takashi Teramoto 1, Sunao Kamimura 1, Nicolas Gosset 1 and Takashi Ono 1 1 Air Liquide Laboratories, Tokyo Innovation Campus, 2-2 Hikarinooka, Yokosuka, Kanagawa 239-0847, Japan; [email protected] (J.G.); [email protected] (T.T.); [email protected] (S.K.); [email protected] (N.G.); [email protected] (T.O.) 2 Air Liquide Advanced Materials, 3121 Route 22 East, Branch Estates, Suite 200, Branchburg, NJ 08876, USA; [email protected] 3 Air Liquide Laboratories Korea, 50 Yonsei-ro, Sinchon-dong, Seodaemun-gu, Seoul 03722, Korea; [email protected] (W.N.); [email protected] (J.L.) * Correspondence: [email protected] Abstract: The thermal atomic layer deposition (ThALD) of yttrium oxide (Y2O3) was developed using i the newly designed, liquid precursor, Y(EtCp)2( Pr2-amd), as the yttrium source in combination with different oxygen sources, such as ozone, water and even molecular oxygen. Saturation was observed ◦ for the growth of the Y2O3 films within an ALD window of 300 to 450 C and a growth per cycle Citation: Dussarrat, C.; Blasco, N.; (GPC) up to 1.1 Å. The resulting Y2O3 films possess a smooth and crystalline structure, while avoiding Noh, W.; Lee, J.; Greer, J.; Teramoto, any carbon and nitrogen contamination, as observed by X-ray photoelectron spectroscopy (XPS). T.; Kamimura, S.; Gosset, N.; Ono, T.
    [Show full text]
  • Chemical Names and CAS Numbers Final
    Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number C3H8O 1‐propanol C4H7BrO2 2‐bromobutyric acid 80‐58‐0 GeH3COOH 2‐germaacetic acid C4H10 2‐methylpropane 75‐28‐5 C3H8O 2‐propanol 67‐63‐0 C6H10O3 4‐acetylbutyric acid 448671 C4H7BrO2 4‐bromobutyric acid 2623‐87‐2 CH3CHO acetaldehyde CH3CONH2 acetamide C8H9NO2 acetaminophen 103‐90‐2 − C2H3O2 acetate ion − CH3COO acetate ion C2H4O2 acetic acid 64‐19‐7 CH3COOH acetic acid (CH3)2CO acetone CH3COCl acetyl chloride C2H2 acetylene 74‐86‐2 HCCH acetylene C9H8O4 acetylsalicylic acid 50‐78‐2 H2C(CH)CN acrylonitrile C3H7NO2 Ala C3H7NO2 alanine 56‐41‐7 NaAlSi3O3 albite AlSb aluminium antimonide 25152‐52‐7 AlAs aluminium arsenide 22831‐42‐1 AlBO2 aluminium borate 61279‐70‐7 AlBO aluminium boron oxide 12041‐48‐4 AlBr3 aluminium bromide 7727‐15‐3 AlBr3•6H2O aluminium bromide hexahydrate 2149397 AlCl4Cs aluminium caesium tetrachloride 17992‐03‐9 AlCl3 aluminium chloride (anhydrous) 7446‐70‐0 AlCl3•6H2O aluminium chloride hexahydrate 7784‐13‐6 AlClO aluminium chloride oxide 13596‐11‐7 AlB2 aluminium diboride 12041‐50‐8 AlF2 aluminium difluoride 13569‐23‐8 AlF2O aluminium difluoride oxide 38344‐66‐0 AlB12 aluminium dodecaboride 12041‐54‐2 Al2F6 aluminium fluoride 17949‐86‐9 AlF3 aluminium fluoride 7784‐18‐1 Al(CHO2)3 aluminium formate 7360‐53‐4 1 of 75 Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number Al(OH)3 aluminium hydroxide 21645‐51‐2 Al2I6 aluminium iodide 18898‐35‐6 AlI3 aluminium iodide 7784‐23‐8 AlBr aluminium monobromide 22359‐97‐3 AlCl aluminium monochloride
    [Show full text]
  • Chemistry5.Pdf
    lesson 5.notebook November 15, 2017 What do you remember? 1. Draw a bohr diagram for the sulfide. 2. Write the chemical name for A. CaS B. Mg3P2 C. AlCl3 3. Write the chemical formula for: A. barium nitride B. sodium oxide C. magnesium nitride 1 lesson 5.notebook November 15, 2017 2 lesson 5.notebook November 15, 2017 Open Book Assignment 3 lesson 5.notebook November 15, 2017 Chemical name Chemical Formula 1. zinc phosphide 2. scandium oxide 3. zirconium sulfide 4. 5. 6. 4 lesson 5.notebook November 15, 2017 Element Symbol Charge[s] a) chromium b) cadmium c) lead d) iron e) nickel f) copper 5 lesson 5.notebook November 15, 2017 MULTI­Valent ELEMENTS {multi­ion} • Some metals are able to form more than one kind of ion. • EXAMPLES: Cu+1 or Cu+2 • These compounds are named in the same way as other ionic compounds, except that a Roman numeral is added in round brackets after the metal to indicate its ionic charge. 6 lesson 5.notebook November 15, 2017 Roman Numerals 7 lesson 5.notebook November 15, 2017 A. copper (I) bromide B. copper (II) bromide C. iron (II) sulfide D. lead (IV)sulfide 8 lesson 5.notebook November 15, 2017 E. nickel (II) oxide 9 lesson 5.notebook November 15, 2017 1. What is an ionic compound made up of? 2. What is an ion? 3. Name Chemical formula a.potassium chloride b. MgCl2 c. lead (IV) phosphide d. AgS e. calcium fluoride 10 lesson 5.notebook November 15, 2017 Fe2O3 11 lesson 5.notebook November 15, 2017 Write the names for the following: A.SnCl2 B.SnCl4 C.PbBr2 12 lesson 5.notebook November 15, 2017 Name Formula a) Chromium (III) oxide b) cobalt (II) phosphide c) zirconium nitride titanium(III) oxide 13 lesson 5.notebook November 15, 2017 14 lesson 5.notebook November 15, 2017 Warm­Up 1.Draw a Bohr diagram for nitride.
    [Show full text]
  • Preparing High-Purity Anhydrous Sccl3 Molten Salt Using One-Step Rapid Heating Process
    applied sciences Article Preparing High-Purity Anhydrous ScCl3 Molten Salt Using One-Step Rapid Heating Process Junhui Xiao 1,2,3,4,*, Chao Chen 1,2, Wei Ding 1, Yang Peng 1, Kai Zou 1, Tao Chen 1 and Zhiwei Zou 1 1 Sichuan Provincial Engineering Lab of Non-Metallic Mineral Powder Modification and High-Value Utilization, Southwest University of Science and Technology, Mianyang 621010, China; [email protected] (C.C.); [email protected] (W.D.); [email protected] (Y.P.); [email protected] (K.Z.); [email protected] (T.C.); [email protected] (Z.Z.) 2 Institute of Multipurpose Utilization of Mineral Resources, Chinese Academy of Geological Sciences, Chengdu 610041, China 3 Key Laboratory of Sichuan Province for Comprehensive Utilization of Vanadium and Titanium Resources, Panzhihua University, Panzhihua 617000, China 4 Key Laboratory of Ministry of Education for Solid Waste Treatment and Resource Recycle, Southwest University of Science and Technology, Mianyang 621010, China * Correspondence: [email protected]; Tel.: +86-139-9019-0544 Received: 7 July 2020; Accepted: 27 July 2020; Published: 28 July 2020 Abstract: In this study, a one-step rapid heating novel process was used to prepare high-purity anhydrous scandium chloride molten salt with low-purity scandium oxide. High-purity anhydrous ScCl3 molten salt was used as the Sc-bearing raw material for preparing the Sc-bearing master alloy. Inert gas was used to enhance the purity of anhydrous scandium chloride and reduce the hydrolysis rate of scandium. The results show that high-purity scandium chloride (purity, 99.69%) with the scandium content of 29.61%, was obtained, and the hydrolysis rate of scandium was 1.19% under the conditions used: removing ammonium chloride; residual crystal water temperature of 400 ◦C; m(Sc2O3):m(NH4Cl) = 1:2.5; holding-time of 90 min; heating-rate of 12 ◦C/min; and argon flow of 7.5 L/min.
    [Show full text]
  • Rare Earth Elements in ND Presented to the Energy Development and Transmission Committee Senator Rich Wardner, Chair August 14, 2018
    Rare Earth Elements in ND Presented to the Energy Development and Transmission Committee Senator Rich Wardner, Chair August 14, 2018 Ned Kruger North Dakota Department of Mineral Resources Geological Survey Rare Earth Elements • Sixteen elements with specialized properties including strength, magnetism, luminescence, heat resistance... • In wide-spread use in modern high-technology products. • Not all that rare – except at ore grade concentrations. North Dakota Department Energy Development & Transmission Committee North Dakota of Mineral Resources Tuesday, August 14, 2018 Geological Survey North Dakota Department Energy Development & Transmission Committee North Dakota of Mineral Resources Tuesday, August 14, 2018 Geological Survey North Dakota Department Energy Development & Transmission Committee North Dakota of Mineral Resources Tuesday, August 14, 2018 Geological Survey Evolution of computer chip technology Shultz, K.J., DeYoung, J.H., Jr., Seal, R.R., II, and Bradly, D.C.. Eds., 2017, Critical mineral resources of the United States – Economic and environmental geology and prospects for future supply: U.S. Geological Survey Professional Paper 1802, 797 p., https://doi.org/10.3133/pp1802 Evolution of computer chip technology Shultz, K.J., DeYoung, J.H., Jr., Seal, R.R., II, and Bradly, D.C.. Eds., 2017, Critical mineral resources of the United States – Economic and environmental geology and prospects for future supply: U.S. Geological Survey Professional Paper 1802, 797 p., https://doi.org/10.3133/pp1802 Evolution of computer chip technology Shultz, K.J., DeYoung, J.H., Jr., Seal, R.R., II, and Bradly, D.C.. Eds., 2017, Critical mineral resources of the United States – Economic and environmental geology and prospects for future supply: U.S.
    [Show full text]
  • Product Specification [email protected]
    Arlington, TX 76012 Pocomoke City, MD 21851 Batesville, IN 47006 http://www.riccachemical.com 1-888-GO-RICCA Product Specification [email protected] ICP-MS Calibration Standard 1 Manufacture Date: N/A Lot Number: SAMPLE Product Number: RICPMS1 Expiration Date: N/A This is a multielement solution that was prepared volumetrically to contain the elements and concentrations stated below. The uncertainty associated with the certified values is ± 1% relative. The concentrations are confirmed by ICP or ICP-MS. Matrix: 5% Nitric Acid Name CAS# Grade Water 7732-18-5 ACS/ASTM/USP/EP Nitric Acid 7697-37-2 Trace Metals Test Specification Result Appearance Colorless to slightly colored N/A liquid Analyte Analysis (ppm) Solute CAS# Grade NIST SRM# Cerium (Ce) 9.9-10.1 ppm Cerium (III) Nitrate 10294-41-4 High Purity 3110 Hexahydrate Thorium (Th) 9.9-10.1 ppm Thorium Nitrate 13823-29-5 High Purity 3159 Scandium (Sc) 9.9-10.1 ppm Scandium Oxide 12060-08-1 High Purity 3148 Yttrium (Y) 9.9-10.1 ppm Yttrium Oxide 1314-36-9 High Purity 3167 Lanthanum (La) 9.9-10.1 ppm Lanthanum Oxide 1312-81-8 High Purity 3127 Praseodymium (Pr) 9.9-10.1 ppm Praseodymium Oxide 12037-29-5 High Purity 3142 Terbium (Tb) 9.9-10.1 ppm Terbium Oxide 12037-01-3 High Purity 3157 Ytterbium (Yb) 9.9-10.1 ppm Ytterbium (III) Oxide 1314-37-0 High Purity 3166 Neodymium (Nd) 9.9-10.1 ppm Neodymium Oxide 1313-97-9 High Purity 3135 Europium (Eu) 9.9-10.1 ppm Europium Oxide 1308-96-9 High Purity 3117 Dysprosium (Dy) 9.9-10.1 ppm Dysprosium Oxide 1308-87-8 High Purity 3115 Gadolinium
    [Show full text]
  • Transparent P-Type Semiconductors: Copper-Based Oxides and Oxychalcogenides
    coatings Review Transparent p-Type Semiconductors: Copper-Based Oxides and Oxychalcogenides Nengduo Zhang 1,2,†, Jian Sun 3,† and Hao Gong 1,* 1 Department of Materials Science and Engineering, National University of Singapore, Singapore 117576, Singapore; [email protected] 2 NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore 117456, Singapore 3 Faculty of Materials Science and Chemistry, China University of Geoscience, Wuhan 430074, China; [email protected] * Correspondence: [email protected] † These authors contributed equally to this work. Received: 31 January 2019; Accepted: 16 February 2019; Published: 20 February 2019 Abstract: While p-type transparent conducting materials (TCMs) are crucial for many optoelectronic applications, their performance is still not satisfactory. This has impeded the development of many devices such as photovoltaics, sensors, and transparent electronics. Among the various p-type TCMs proposed so far, Cu-based oxides and oxychalcogenides have demonstrated promising results in terms of their optical and electrical properties. Hence, they are the focus of this current review. Their basic material properties, including their crystal structures, conduction mechanisms, and electronic structures will be covered, as well as their device applications. Also, the development of performance enhancement strategies including doping/co-doping, annealing, and other innovative ways to improve conductivity will be discussed in detail. Keywords: p-type semiconductors; transparent oxides; delafossite; oxychalcogenide 1. Introduction Transparent conducting oxides (TCOs) possess high electrical conductivity and good optical transparency in the visible light range, and they have been intensively studied over the past few decades due to their important roles in electronic industries including photovoltaic cells (PV cells), touch screen displays, solid-state sensors, organic light-emitting diodes (OLEDs), and liquid crystal displays [1–3].
    [Show full text]