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Yttrium and Scandium in Solution‐Processed Oxide Electronic Materials

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Yttrium and Scandium in Solution‐Processed Oxide Electronic Materials Yttrium and Scandium in Solution‐processed Oxide Electronic Materials by Wenbing Hu A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Electrical Engineering) in the University of Michigan 2016 Doctoral Committee: Assistant Professor Becky (R. L.) Peterson, Chair Professor Wei Lu Associate Professor Emmanuelle Marquis Professor Jamie D. Phillips Associate Professor Zhaohui Zhong © 2016 Wenbing Hu All rights reserved Dedication To my mom and dad, for their unconditional love. ii Acknowledgments I would like to express my most sincere gratitude to my research advisor Assistant Professor Becky Peterson. She introduced me to the field of solution‐processed metal oxide electronic materials, and guided me from the beginning with precision, kindness, patience and encouragement. She herself also sets a good example as an active and hardworking scholar. Throughout my grad school, I kept learning from her the methodology and the skills to become a better scholar. Not only is she a great mentor in research, but she is also a wonderful guide in life and an awesome friend. She is one of the people who have the most influence on me. I would also like to thank my doctoral committee members: Professor Wei Lu, Associate Professor Emmanuelle Marquis, Professor Jamie D. Phillips, Associate Professor Zhaohui Zhong and my former committee member, Associate Professor Kevin Pipe, for all the precious insights from them to help improve the quality of my research and thesis. I thank National Science Foundation, Samsung and University of Michigan for their financial support. I specially thank Professor Khalil Najafi, Mr. Robert Gordenker and all the Najafi group students for their great support in the early years of my grad school. iii I acknowledge the staff of Department of Electrical Engineering and Computer Science (EECS), Lurie Nanofabrication Facility (LNF) and Michigan Center for Materials Characterization (MC2) for all the technical and logistic supports throughout the years. I thank the Peterson Lab group members and former group members. It has been a pleasure working with them. The help and motivation we bring each other are what make us improve faster. I am extremely grateful to my friends. They are the family I choose, and I have made great choices. Some of them have been of great help, some of great motivation, and all have made my life happy and colorful. Last but not least, my wholehearted gratitude goes to my family, especially my mom (Qi Li) and dad (Xuezhao Hu). I could not have gone this far without their unconditional support. Even though we are separated by thousands of miles, their love feels so close and motivates me every day, and my love is always with them, too. iv Table of Contents Dedication .......................................................................................................................ii Acknowledgments .......................................................................................................... iii List of Figures ................................................................................................................. ix List of Tables ................................................................................................................ xxii Abstract ...................................................................................................................... xxiv Introduction ............................................................................................... 1 Oxide electronic materials ................................................................................ 1 Large area electronics ....................................................................................... 3 Solution process thin film deposition technique ............................................. 5 Scandium and yttrium alloyed oxide materials .............................................. 10 Thesis Goals and Objectives ........................................................................... 16 Thesis Overview .............................................................................................. 18 Solution‐processed zinc tin oxide semiconductor .................................. 19 Introduction .................................................................................................... 19 Experimental ................................................................................................... 25 Results and discussions .................................................................................. 26 ix Conclusions ..................................................................................................... 36 Contact resistance of zinc tin oxide transistors ...................................... 38 Introduction .................................................................................................... 38 3.1.1 Transistor scaling ..................................................................................... 38 3.1.2 Source and drain contact resistance in power electronic devices .......... 39 3.1.3 Source and drain contact resistance in TAOS TFT scaling ....................... 39 3.1.4 Solution‐processed ZTO TFT scaling and contact resistance .................. 41 Experimental ................................................................................................... 42 Results and discussion .................................................................................... 44 3.3.1 Mobility degradation ............................................................................... 44 3.3.2 Contact resistance ................................................................................... 46 3.3.3 Transfer length ........................................................................................ 51 Conclusions and future work .......................................................................... 52 3.4.1 Conclusions .............................................................................................. 52 3.4.2 Outstanding scientific questions and future works ................................ 52 Solution‐processed yttrium/scandium‐doped zinc tin oxide TFTs.......... 54 Introduction .................................................................................................... 54 4.1.1 Stability of TAOS TFTs .............................................................................. 54 x 4.1.2 Origin of the instabilities ......................................................................... 55 4.1.3 TAOS with oxygen getters ....................................................................... 57 Experimental ................................................................................................... 59 Results and discussion .................................................................................... 62 4.3.1 DC performance ...................................................................................... 62 4.3.2 Long term storage stability ..................................................................... 64 4.3.3 The effect of passivation on DC performance and PBS .......................... 65 4.3.4 Negative bias illumination stress stability ............................................... 68 Conclusions and future work .......................................................................... 92 4.4.1 Conclusions .............................................................................................. 92 4.4.2 Outstanding scientific questions and future work .................................. 92 Yttrium and scandium in zinc oxide as transparent conductive oxides .. 94 Introduction .................................................................................................... 94 Experimental ................................................................................................... 98 Results and Discussions ................................................................................ 100 5.3.1 Optical properties.................................................................................. 100 5.3.2 As‐deposited film electrical properties ................................................. 101 5.3.3 Electrical properties following rapid thermal annealing....................... 109 xi Conclusions ................................................................................................... 119 Solution‐processed ternary yttrium scandium oxide ............................ 122 Introduction .................................................................................................. 122 6.1.1 High‐k dielectric materials .................................................................... 122 6.1.2 Binary and ternary dielectric materials ................................................. 122 6.1.3 Ternary alloy yttrium scandium oxide .................................................. 123 Experimental ................................................................................................. 126 Results and discussions ................................................................................ 128 6.3.1 As deposited film characteristics .......................................................... 128 6.3.2 Dielectric properties of as‐deposited films ........................................... 130 6.3.3 Crystallization and thermal stability ..................................................... 140 Conclusions and future work .......................................................................
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