<<

PMT and HV control

M. Nomachi PMT

Photo multiplier is used to detect weak light. Q1: What does “weak” mean?

Scintillation light generated by radiation detector, such as Plastic scintillator, is very weak. PMT is used to detect such weak light. CHAPTER 2PMT BASIC PRINCIPLES OF 1)-5) PHOTOMULTIPLIERYou can learn PMT with “PMT handbook” TUBES from Hamamatsu, which is at http://www.hamamatsu.com/resources/pdf/etd/PMT_handbook_v3aE.pdf Figures on this text is copied from the handbook. A is a consisting of an input window, a photocathode, focusing electrodes, an multiplier and an anode usu- ally sealed into an evacuated glass tube. Figure 2-1 shows the schematic construction of a photomultiplier tube.

FOCUSING ELECTRODE

SECONDARY ELECTRON LAST DYNODE STEM PIN

VACUUM (~10P-4 ) DIRECTION e - OF LIGHT

FACEPLATE STEM ANODE (DYNODES) PHOTOCATHODE THBV3_0201EA

Figure 2-1: Construction of a photomultiplier tube Light which enters a photomultiplier tube is detected and produces an output signal through the following processes. (1) Light passes through the input window. (2) Light excites the in the photocathode so that photoelec- trons are emitted into the vacuum (external ). (3) Photoelectrons are accelerated and focused by the focusing elec- trode onto the first dynode where they are multiplied by means of secondary electron emission. This is repeated at each of the successive dynodes. (4) The multiplied secondary electrons emitted from the last dynode are finally collected by the anode. This chapter describes the principles of photoelectron emission, electron tra- jectory, and the design and function of electron multipliers. The electron multi- pliers used for photomultiplier tubes are classified into two types: normal dis- crete dynodes consisting of multiple stages and continuous dynodes such as mi- crochannel plates. Since both types of dynodes differ considerably in operating principle, photomultiplier tubes using microchannel plates (MCP-PMTs) are separately described in Chapter 10. Furthermore, electron multipliers for vari- ous particle beams and ion detectors are discussed in Chapter 12.

© 2007 HAMAMATSU PHOTONICS K. K. Photoelectric effect

1921 Nobel prize

If metal electrodes are exposed to light, electrical sparks between them occur more readily. For this "photoelectric effect" to occur, the light waves must be above a certain frequency, however. According to physics theory, the light's intensity should be critical. In one of several epoch-making studies beginning in 1905, Albert Einstein explained that light consists of quanta - "packets" with fixed energies corresponding to certain frequencies. One such light quantum, a photon, must have a certain minimum frequency before it can liberate an electron. https://www.nobelprize.org/nobel_prizes/physics/laureates/1921/einstein-facts.html

PMT is a device which can observe single photon. CHAPTER 2 BASIC PRINCIPLES OF PHOTOMULTIPLIER TUBES 1)-5)

A photomultiplier tube is a vacuum tube consisting of an input window, a photocathode, focusing electrodes, an electron multiplier and an anode usu- ally sealed into an evacuated glass tube. Figure 2-1 shows the schematic construction of a photomultiplier tube. photoelectric effect FOCUSING ELECTRODE

SECONDARY ELECTRON LAST DYNODE STEM PIN

VACUUM (~10P-4 ) DIRECTIONPhoton electrone - OF LIGHT

FACEPLATE STEM ELECTRON MULTIPLIER ANODE (DYNODES) PHOTOCATHODE THBV3_0201EA

Figure 2-1: Construction of a photomultiplier tube Light which enters a photomultiplier tube is detected and produces an output signal through the following processes. (1) Light passes through the input window. (2) Light excites the electrons in the photocathode so that photoelec- trons are emitted into the vacuum (external photoelectric effect). (3) Photoelectrons are accelerated and focused by the focusing elec- trode onto the first dynode where they are multiplied by means of secondary electron emission. This secondary emission is repeated at each of the successive dynodes. (4) The multiplied secondary electrons emitted from the last dynode are finally collected by the anode. This chapter describes the principles of photoelectron emission, electron tra- jectory, and the design and function of electron multipliers. The electron multi- pliers used for photomultiplier tubes are classified into two types: normal dis- crete dynodes consisting of multiple stages and continuous dynodes such as mi- crochannel plates. Since both types of dynodes differ considerably in operating principle, photomultiplier tubes using microchannel plates (MCP-PMTs) are separately described in Chapter 10. Furthermore, electron multipliers for vari- ous particle beams and ion detectors are discussed in Chapter 12.

© 2007 HAMAMATSU PHOTONICS K. K. Multiplication at Dynode

Photo cathode

1) Electric field accelerate an electron. Electric potential

Q: How much energy is obtained?

Dynode

2) The electron kicks out Electric potential several electrons in a dynode.

Dynode 46 CHAPTER 4 CHARACTERISTICS OF PHOTOMULTIPLIER TUBES

100

46 CHAPTER 4 CHARACTERISTICS OF PHOTOMULTIPLIER TUBES 80

100

60 80

60 40

40

20 20

RELATIVE COLLECTION EFFICIENCY (%) 0 40 50 100 150 RELATIVE COLLECTION EFFICIENCY (%) 0 PHOTOCATHODE40 50 TO FIRST DYNODE VOLTAGE (V)100 150

THBV3_0412EA

Figure 4-12: Collection efficiency vs. photocathode-to-first dynode voltage 46 CHAPTER 4 CHARACTERISTICS OF PHOTOMULTIPLIERPHOTOCATHODE TUBES TO FIRST DYNODE VOLTAGE (V)

Figure 4-12 shows that about 100 volts should be applied between the cathode and the first dynode. The THBV3_0412EA collection efficiency100 influences energy resolution, detection efficiency and signal-to-noise ratio in scintil- lation counting.Figure The detection 4-12: efficiency Collection is the ratio efficiencyof the detected signalvs. photocathode-to-firstto the input signal of a photo- dynode voltage multiplier tube. 80In photon counting this is expressed as the product of the photocathode quantum efficiency and the collection efficiency. Figure 4-1260 shows that about 100 volts should be applied between the cathode and the first dynode. The

2.3 Electron Multiplier (Dynode Section) 17 (2)collection Gain (current efficiency40 amplification) influences energy resolution, detection efficiency and signal-to-noise ratio in scintil-

PHOTOCATHODE lationSecondary counting. emission The ratio detectionδ is a function efficiencyof the interstageF is voltage the ratioof8 dynodes of theE, and detected is given by thesignal to the input signal of a photo- 20 6 following equation: PHOTO- 1 multiplier tube. In photon counting thisELECTRONS is expressed4 7 as the product of the photocathode quantum efficiency k 5

RELATIVE COLLECTION EFFICIENCY (%) INCIDENT LIGHT δ = a·E0 ··························································································· (Eq. 4-3) 150 40 50 100 3 and the collection efficiency. 2 Where a is a constant and k is determined by the structure and material of the dynode and has a value PHOTOCATHODE TO FIRST DYNODE VOLTAGE (V) 1 to 7 = DYNODES 8 = ANODE THBV3_0412EA from 0.7 to 0.8. F = FOCUSING ELECTRODE Figure 4-12: Collection efficiency vs. photocathode-to-first dynode voltage THBV3_0204EA Figure 2-4: Box-and-grid type (2) GainTheFigure photoelectron 4-12 shows(current that about current 100 volts should amplification)Ik emitted be applied betweenfrom thethe cathode photocathode and the first dynode. strikes The the first dynode where secondary collection efficiency influences energy resolution, detection efficiency and signal-to-noiseF ratio in scintil- 4.2 Basic Characteristics of Dynodes1 47 electrons Idl are released. At this point, theINCIDENT secondary emission ratio δ1 at11 the first dynode is given by LIGHT 3579 lation counting. The detection efficiency is the ratio of the detected signal to thePHOTO- input signal of a photo- Multiplication at DynodeELECTRONS multiplier tube. In photon counting this is expressed as the product of the photocathode quantum efficiency 10 Id1 2 4 6 8 Secondaryand the collection = efficiency. emission ratio δ is a function of the interstage voltage of dynodes E, and is given by the δ 1 ····························································································1 to 10 = DYNODES (Eq. 4-4) IK 11 = ANODE where α is the collection efficiency. F = FOCUSING ELECTRODE following(2) Gain (current equation: amplification) THBV3_0205EA The number of secondary electron is These electrons are multiplied in a cascade processFigure from 2-5: Linear-focusedthe first type dynode → second dynode → .... The productSecondary emissionof α, δratio1, δ 2is .....a functionδ n isof thecalled interstage the voltage gain of µdynodes(current E, and isamplification), given by the and is given by the following thefollowing n-th dynode.equation: The secondaryk emission ratio δn of n-th stage is given by = a·E ···························································································2.3 Electron Multiplier (Dynode Section) (Eq. 4-3) equation: δk δ = a·E ··························································································· (Eq. 4-3) Idn As stated above, the potential distribution and electrode structure of a photomultiplier tube is designed to Where aδ isn a= constant and k is determined by the structureprovide and optimum material performance. of the Photoelectrons dynode and emitted has afrom value the photocathode are multiplied by the first dyn- µ = α·δ1·δ2 ···························································································· δn ·········································································· (Eq. (Eq. 4-8)4-5) from 0.7 to 0.8. Id(n-1) ode through the last dynode (up to 19 dynodes), with current amplification ranging from 10 to as much as 108 Where a is a constant andtimes, andk are isfinally sentdetermined to the anode. by the structure and material of the dynode and has a value The photoelectron current Ik emitted from the photocathode strikes the first dynode17)-21) where secondary Accordingly,The anode in current the case Ip ofis givena photomultiplier by the Majorfollowing secondary tube emissive equation: with materials a=1 used and for dynodes the arenumber alkali antimonide, of beryllium dynode oxide (BeO), stages = n, which fromelectrons 0.7 Idl are to released. 0.8. At this point, the secondary emissionmagnesium ratio oxide δ 1(MgO), at the gallium first dynode phosphide is (GaP) given and by gallium phosphide (GaAsP). These materials are is operated using an equally-distributed divider,coated onto a substrate the electrode gain made m of changesnickel, stainless steel, in or relation copper-beryllium to alloy. the Figure supply2-6 shows voltage V, as Ip I=d1 Ik·α·δ1·δ2 ··· δn ·········································································a model of the secondary emission multiplication of a dynode. (Eq. 4-6) δ 1 = ···························································································· (Eq. 4-4) I follows: K PRIMARY SECONDARY ELECTRON ELECTRONS TheThenThese electronsphotoelectron are multiplied in a cascade current process from theIk first emitted dynode → second from dynode → ....the photocathode strikes the first dynode where secondary the n-th dynode. Thek nsecondaryn emissionV knratio δn of n-thkn stage is given by SECONDARY a E a A V EMISSIVE µ = I(p · ) = ()= · ·····················································SURFACE (Eq. 4-9) electrons IdnIdl are released. At this point, the secondary emission ratio at the first dynode is given by δn = = α··························································································δ1·δ2 ···n+1 δn ············································································· (Eq. 4-5) (Eq. 4-7) δ1 IkId(n-1) n kn whereThe A anode should current beIp is equalgiven by theto followinga /(n+1) equation:. From this equation, it is clear that the gain µ is proportional to Ip = Ik·α·δ1·δ2 ··· δId1········································································· (Eq. 4-6) the kn exponentialExercise: =power Measure n of the supply“kn” voltage. Figure 4-13SUBSTRATE shows ELECTRODE typical gain vs. supply voltage. Since Then δ 1 ···························································································· (Eq. 4-4) Figure 4-13 is expressed in logarithmic scale for both the abscissa and ordinate, theTHBV3_0206EA slope of the straight Ip IK = α·δ1·δ2 ··· δn ············································································· (Eq. Figure4-7) 2-6: Secondary emission of dynode line becomesIk kn and the current multiplication© 2007 HAMAMATSU increases PHOTONICS with the increasing K. K. supply voltage. This means that theThese gain of aelectrons photomultiplier are tube multiplied is susceptible toin variations© 2007a HAMAMATSUcascade in PHOTONICS the high-voltage K.process K. powerfrom supply, the suchfirst as dynode → second dynode → .... drift, ripple, temperature stability, input regulation, and load regulation. the n-th dynode. ©The 2007 HAMAMATSU secondary PHOTONICS K.emission K. ratio δn of n-th stage is given by 104 109 Idn δn = ························································································· (Eq. 4-5) Id(n-1) 103 108 The anode current Ip is given by the following equation: ANODE LUMINOUS k ········································································· (Eq. 4-6) Ip = I 10·α2 ·δ1·δ2 ··· δnSENSITIVITY 107 Then

101 106

Ip GAIN = α·δ1·δ2 ··· δn ············································································· (Eq. 4-7) Ik 100 105 ANODE LUMINOUS SENSITIVITY (A / lm) 10−1 GAIN (CURRENT 104 AMPLIFICATION) © 2007 HAMAMATSU PHOTONICS K. K.

10−2 103 200 300 500 700 1000 1500 SUPPLY VOLTAGE (V) THBV3_0413EA

Figure 4-13: Gain vs. supply voltage

© 2007 HAMAMATSU PHOTONICS K. K. PHOTOMULTIPLIER TUBE R329-02

FEATURES ●Fast time response

PHOTOMULTIPLIER TUBE APPLICATIONS R329-02 ●For scintillation counting ●HighFEATURES energy physics ●Fast time response

APPLICATIONS ●For scintillation counting ●HighSPECIFICATIONS energy physics GENERAL SPECIFICATIONS Parameter Description / Value Unit GENERALSpectral response 300 to 650 nm Wavelength of maximumParameter response Description / Value Unit 420 nm Spectral response 300 to 650 nm Wavelength of maximum response MateriaI 420 nm Bialkali — Photocathode MateriaI Bialkali — Photocathode Minimum effective area 46 mm Minimum effective area 46 mm WindowWindow material material Borosilicate glass — Borosilicate glass — Structure Linear focused — Dynode Structure Linear focused — Dynode Number of stages 12 — Operating ambient temperature Number of stages -30 to +50 °C 12 Storage temperature -30 to +50 °C — OperatingBase ambient temperature 21-pin glass base — -30 to +50 °C Suitable socket E678-21C (supplied) — MAXIMUMStorage temperatureRATINGS (Absolute maximum values) -30 to +50 °C Base Parameter Value Unit 21-pin glass base — Supply voltage Between anode and cathode 2700 V SuitableAverage anode socket current 0.2 mA E678-21C (supplied) — CHARACTERISTICS (at 25 °C) MAXIMUM RATINGSParameter (Absolute maximum Min.Typ. values) Max. Unit Luminous (2856 K) 60 90 — µA/lm Cathode sensitivity Blue sensitivity indexParameter (CS 5-58) — 10.5 — — Value Unit Supply voltage Radiant at 420 nmBetween anode —and cathode85 — mA/W 2700 V Luminous (2856 K) 30 100 — A/lm Anode sensitivity Average anode currentRadiant at 420 nm — 9.4 × 104 — A/W 0.2 mA Gain — 1.1 × 106 — — Anode dark current (after 30 min storage in darkness) — 6.0 40 nA CHARACTERISTICSAnode pulse rise (attime 25 °C) — 2.6 — ns Time response Electron transit time — 48 — ns Transit time spreadParameter (T.T.S.) — 1.1 — ns Min.Typ. Max. Unit Exercise:at 2 % deviation Measure— “kn”.15 (100) — n=12mA Pulse linearity Luminous (2856 K) 60 90 — µA/lm at 5 % deviation — 30 (200) — mA NOTE:Cathode Anode characteristics sensitivity are measured with the voltageBlue distribution sensitivity ratio shown below.index (CS 5-58) — 10.5 — — ( ): Measured with the special voltage distribution ratioRadiant (Tapered Divider) at 420 shown below.nm — 85 — mA/W VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes KG Dy1 Dy2 Dy3 LuminousDy4 Dy5 Dy6 (2856Dy7 K)Dy8 Dy9 Dy10 Dy11 Dy12 P 30 100 — A/lm Anode sensitivity Ratio 4 0 1 1.4 1Radiant1 11at 420 nm111111 — 9.4 104 — A/W Supply voltage: 1500 V, K: Cathode, Dy: Dynode, P: Anode, G: Grid × Gain * The shield pin should be connected to Dy5. — 1.1 × 106 — — VOLTAGEAnode dark DISTRIBUTION current (after RATIO 30 AND min SUPPLY storage VOLTAGE in darkness) (Tapered Divider) — 6.0 40 nA Electrodes KG Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 P Ratio 4.3 0 1 1.6 1Anode1 pulse1 1.2 rise1.5 time 2 2.4 3 3.9 3 — 2.6 — ns SupplyTime voltage: response 2000 V, K: Cathode, Dy: Dynode,Electron P: Anode, G: Gridtransit time — 48 — ns Subject to local technical requirements and regulations, availabilityTransit of products time included inspread this promotional (T.T.S.) material may vary. Please consult with our sales office. — 1.1 — ns Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted atto any 2 of %the circuits deviation described herein. ©2016 Hamamatsu Photonics K.K. — 15 (100) — mA Pulse linearity at 5 % deviation — 30 (200) — mA NOTE: Anode characteristics are measured with the voltage distribution ratio shown below. ( ): Measured with the special voltage distribution ratio (Tapered Divider) shown below. VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes KG Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 P Ratio 4 0 1 1.4 1 1 11111111 Supply voltage: 1500 V, K: Cathode, Dy: Dynode, P: Anode, G: Grid * The shield pin should be connected to Dy5. VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE (Tapered Divider) Electrodes KG Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 P Ratio 4.3 0 1 1.6 1 1 1 1.2 1.5 2 2.4 3 3.9 3 Supply voltage: 2000 V, K: Cathode, Dy: Dynode, P: Anode, G: Grid

Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2016 Hamamatsu Photonics K.K. Stellenbosch University http://scholar.sun.ac.za

3

Cosmic Muon

Cosmic muons and environmental gamma rays cause “scintillation light”.

Environmental gamma ray energy is less than ~3MeV. It causes Compton scattering in the plastic. The energy deposit will be less. Environmental Gamma ray Cosmic ray

Cosmic Muon

From Wikipedia, the free encyclopedia

Cosmic muons are energetic (~GeV) However, they pass through the plastic. How much energy deposit is on the plastic? *** NOTE TO PUBLISHER OF Particle Physics Booklet *** Pleaseusecropmarkstoalignpages September 26, 2016 14:02

266 33. Passage ofMean particles through energy matter loss rate

10 8

) 6 2 H2 liquid

cm 5

—1 4 He gas 3 (MeV g 〉 C Al Fe dE/dx 2 Sn – 〈 Pb

1 0.1 1.0 10 100 1000 10 000 about 2 MeV/cm βγ = p/Mc

0.1 1.0 10 100 1000 Muon momentum (GeV/c) Particle Data Group Booklet 0.1 1.0 10 100 1000 Pion momentum (GeV/c)

0.1 1.0 10 100 1000 10 000 Proton momentum (GeV/c) Figure 33.2: Mean energy loss rate in liquid (bubble chamber) hydrogen, gaseous helium, carbon, aluminum, iron, tin, and lead. Radiative effects, relevant for muons and pions, are not included. These become significant for muons in iron for βγ ∼> 1000, and at lower momenta in higher-Z absorbers. See Fig. 33.21. for muons and pions. Estimates of the mean excitation energy I based on experimental stopping-power measurements for protons, deuterons, and alpha particles are given in Ref. 11; see also pdg.lbl.gov/AtomicNuclearProperties. 33.2.5. Density effect :Astheparticleenergyincreases,itselectric field flattens and extends, so that the distant-collision contribution to Eq. (33.5) increases as ln βγ.However,realmediabecomepolarized, limiting the field extension and effectively truncating this part of the logarithmic rise [2–8,15–16]. At very high energies, δ/2 → ln(!ωp/I)+lnβγ −1/2 , (33.6) where δ(βγ)/2isthedensityeffect correction introduced in Eq. (33.5) and !ωp is the plasma energy defined in Table 33.1. A comparison with Eq. (33.5) shows that |dE/dx| then grows as ln βγ rather than ln β2γ2, and that the mean excitation energy I is replaced by the plasma energy !ωp.Sincetheplasmafrequencyscalesasthesquarerootoftheelectron density, the correction is much larger for a liquid or solid than for a gas, as is illustrated by the examples in Fig. 33.2. 2 2 The remaining relativistic rise comes from the β γ growth of Wmax, which in turn is due to (rare) large energy transfers to a few electrons. When these events are excluded, the energy deposit in an absorbing layer approaches a constant value, the Fermi plateau (see Sec. 33.2.8 below). At extreme energies (e.g., > 332 GeV for muons in iron, and

*** NOTE TO PUBLISHER OF Particle Physics Booklet *** Pleaseusecropmarkstoalignpages September 26, 2016 14:02 Stellenbosch University http://scholar.sun.ac.za

3

Use one signal (PMT at window side) to select a set of signals. Measure average pulse height of the set of signals at the other PMT. High Voltage and threshold should be fixed to select the same signals. Plastic scintillator PHOTOMULTIPLIER TUBE PHOTOMULTIPLIER TUBE R329-02 R329-02

FEATURES ●Fast time response Figure 1: Typical spectral response Figure 2: Typical gain characteristics

TPMHB0204EB APPLICATIONS TPMHB0604EA 8 100 ●For scintillation counting 10 ●High energy physics

SPECIFICATIONS 107 GENERAL Parameter Description / Value Unit 10 Spectral response 300 to 650 nm Wavelength of maximum response 420 nm MateriaI Bialkali — Photocathode Minimum effective area 106 46 mm Window material Borosilicate glass — CATHODE Structure Linear focused — Dynode RADIANT Number of stages 12 — Operating ambient temperature -30 to +50 °C SENSITIVITY Storage temperature -30 to +50 °C 1 Base 105 21-pin glass base — Suitable socket E678-21C (supplied) — GAIN MAXIMUM RATINGS (Absolute maximum values) QUANTUM Parameter Value Unit Supply voltage Between anode and cathode 2700 V EFFICIENCY Average anode current 0.2 mA 104 CHARACTERISTICS (at 25 °C) Parameter Min.Typ. Max. Unit QUANTUM EFFICIENCY (%) 0.1 Luminous (2856 K) 60 90 — µA/lm Cathode sensitivity Blue sensitivity index (CS 5-58) — 10.5 — — Radiant at 420 nm — 85 — mA/W Luminous (2856 K) 30 100 — A/lm Anode sensitivity 103 Radiant at 420 nm — 9.4 × 104 — A/W CATHODE RADIANT SENSITIVITY (mA/W) Gain — 1.1 × 106 — — Anode dark current (after 30 min storage in darkness) — 6.0 40 nA Anode pulse rise time — 2.6 — ns Time response Electron transit time — 48 — ns Transit time spread (T.T.S.) 2 — 1.1 — ns 0.01 at 2 % deviation 10 — 15 (100) — mA Pulse linearity 200400 600 800 at 5 % deviation 500 700— 100030 (200) 1500— 2000mA 3000 NOTE: Anode characteristics are measured with the voltage distribution ratio shown below. ( ): Measured with the special voltage distribution ratio (Tapered Divider) shown below. WAVELENGTH (nm) VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE SUPPLY VOLTAGE (V) Electrodes KG Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 P Ratio 4 0 1 1.4 1 1 11111111 Supply voltage: 1500 V, K: Cathode, Dy: Dynode, P: Anode, G: Grid * The shield pin should be connected to Dy5. VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE (Tapered Divider) Electrodes KG Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 P Ratio 4.3 0 1 1.6 1 1 1 1.2 1.5 2 2.4 3 3.9 3 Figure 3: Dimensional outline and basing diagramSupply voltage: (Unit: 2000 V, K:mm) Cathode, Dy: Dynode, P: Anode, G: Grid

Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are 53.0 ± 1.5 subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2016 HamamatsuSocket Photonics K.K. E678-21C FACEPLATE 46 MIN. (Supplied) 51

PHOTO- 19 CATHODE

HA

2 IC TREATMENT ± SH DY10 IC DY8 10 11 12

127 DY12 9 13 DY6 P 8 14 DY4 7 15

DY11 6 16 DY2 R5 56.8 DY9 5 17 G DY7 4 18 IC 3 19 2 20 LIGHT SHIELD DY5 1 21 IC DY3 IC DY1 K 5

21 PIN BASE *CONNECT SH TO DY5 13 14 MAX. 4

TPMHA0123EE 6.5

TACCA0066ED

HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected] China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] TPMH1254E03 Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No.158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886)03-659-0080, Fax: (886)07-811-7238 E-mail: [email protected] AUG. 2016 IP