DOCSLIB.ORG

Radiation and Temperature Effects in Gallium Arsenide, Indium Phosphide, and Silicon Solar Cells

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Radiation and Temperature Effects in Gallium Arsenide, Indium Phosphide, and Silicon Solar Cells NASA Technical Memorandum 89870 Radiation and Temperature Effects c in Gallium Arsenide, Indium Phosphide, and Silicon Solar Cells (NASA-TM-8987c) BADXATIGB AND TEBPEBATUBE N8 7-2 20 9 8 EFPEClS XN GALLliUE ARESEAIIDE, 1OCXfJM FBOSPBXICE AND SILICON SCLAB CElLS (NASA) I 14 p Avail: h9IS BC LIO%/WF A01 CSCL 09C Unclas Hl/33 0075143 I. Weinberg, C.K. Swartz, and R.E. Hart, Jr. Lewis Research Center Cleveland, Ohio and R.L. Statler Na Val Research Laboratory Washington, D. C. Prepared for the 19th Photovoltaic Specialists Conference sponsored by the Institute of Electrical and Electronics Engineers 1 New Orleans, Louisiana, May 4-8, 1987 . Pv- +,-*. r I tddi".'. r?C PACE 13 OF POOR ClJALlTY RADIATION AND TEMPERATURE EFFECTS IN GALLIUM ARSENIDE, INDIUM PHOSPHIDE, AND SILICON SOLAR CELLS I. Welnberg, C.K. Swartz, and R.E. Hart, Jr. Natlonal Aeronautlcs and Space Admlnlstratlon Lewls Research Center Cleveland, Ohlo 44135 and R.L. Statler Naval Research Laboratory Washlngton. D.C. The effects of radlatlon on performance are speclflc radlatlon envlronment. At present, the determlned for both n*p and ptn GaAs and InP n*p conflguratlon Is preferred excluslvely for cells and for slllcon ntp cells. It 1s found slllcon cells used ln space. Thls follows from a that the radlatlon reslstance of InP 1s greater demonstrated superlor radlatlon reslstance when than that of both GaAs and S1 under 1 MeV elec- compared to the p*n conflguratlonS6 However. tron trrad\at\on. For slllcon. the observed the sltuatlon Is unclear wlth respect to cells decreased radlatlon reslstance wlth decreased based on InP and GaAs. For GaAs, a prellmlnary reslstlvlty 1s attrlbuted to the presence of a comparlson of the two conflguratlons has been con- radlatlon Induced boron-oxygen defect. Compar- ducted after proton lrradlatlon.7 Conslderlng lson of radlatlon damage In both p*n and ntp InP, there Is a scarclty of data In the open llter- GaAs cells ylelds a decreased radlatlon reslst- ature comparing the radlatlon reslstance of the two ance for the n*p cell attrlbutable to conflguratlons. Hence, we have lrradlated InP and lncreased serles reslstance, decreased shunt GaAs solar cells wlth 1 MeV electrons In both the reslstance, and relatlvely greater losses In n+p and ptn conflguratlons and determlned thelr the cell's p-reglon. For InP, the n*p conflg- performance as a functlon of fluence. In addltlon, uratlon 1s found to have greater radlatlon we have determlned temperature dependencles of the reslstance than the ptn cell. The lncreased solar cell parameters for the unlrradlated cells. loss In thls latter cell Is attrlbuted to Our objectlve lles In assesslng the relatlve per- losses In the cell's emltter reglon. Tempera- formance of n*p and ptn InP and GaAs cells and ture dependency results are lnterpreted uslng thus contrlbutlng to a relatlvely scarce data base. a theoretlcal relatlon for dVoc/dT whlch pre- We also sumnarlze the state-of-the-art In AM0 effl- dlcts that lncreased Voc should result In clency achlevements for SI, GaAs, and InP and decreased numerlcal values for dPm/dT. The Include comparatlve radlatlon reslstance data for predicted correlation 1s observed for GaAs but all three cell types. not for InP a result whlch 1s attrlbuted to varlatlons In cell processlng. Exp e r 1menta 1 Detalls of the InP and GaAs solar cells used Introduc t lon In the present radlatlon damage experlments are shown In Flgs. 1 and 2 and Tables I and 11. The Photovoltalc arrays based on slllcon are, at GaAs cells were obtalned from Varlan.8 The n*p present, the major prlmary source of spacecraft cells were processed by the Rensselaer Polytechnlc electrlc power. On the other hand, galllum arse- In~tltute.~whlle the p+n cells were obtalned nlde solar cells are beglnnlng to see llmlted use from Arlzona State Unlverslty. Addltlonal cell In appllcatlons where end-of-llfe array output detalls can be found In the flgures and In Refs. 8 power, In a degrading radlatlon envlronment, Is a to 10. The cells were lrradlated by 1 MeV elec- major deslgn canslderatlon. Compared to these trons In the Naval Research Laboratorles Van de latter two cells, Indlum phosphlde solar cells are Graaf accelerator. Solar cell performance rneasure- In a relatlvely early stage of development. How- ments were carrled out at NASA Lewls. using an alr ever, It has been shown that InP solar cells are mass zero X-25 Xenon arc solar. The cell perform- slgnlflcantly more radlatlon resistant than elther ance data 1s based on total cell area lncludlng GaAs or slllcon when exposed to 1 MeV electron and that covered by the front contacts. Temperature 10 MeV proton 1rradlatlons.l e2 Thelr superlor dependency measurements on unlrradlated cells were radlatlon reslstance, annealablllty.3 and the performed In a nltrogen atmosphere uslng a varlable recent attalnment of 17.9 percent total area AM0 temperature chamber lnto whlch the X-25 slmulator effl~lencles.~wlth feaslblllty lndlcated for beam was lntroduced through a glass port. In a efflclencles greater than 20 per~ent.~make InP later sectlon of the present paper we compare the cells prlme candldates for future use In the space performance of S1, GaAs. and InP cells under 1 MeV radlatlon envlronment. Thls belng the case, It Is electron lrradlatlon. For background lnformatlon concelvable that all three cell types wlll even- to thls comparlson we present In Table 111, the tually be used In space, thelr utlllzatlon depend- performance parameters of those cells havlng the lng on the spacecraft EOL power requlrements In a 1 hlghest AM0 efflclencles. Addltlonal detalls can Level Translent Spectroscopy (DLTS). Evldence be found In Refs. 4. 8, 11, and 12. obtalned from DLTS has led to the concluslon that a radlatlon Induced defect, composed of boron and . Res u 1 t s oxygen, 1s predomlnant In causlng radlatlon Induced degradatlon In boron doped p-type slllc~n.~~*~~ Normallzed efflclencles of the GaAs and InP Of the three major deep level defects observed In cells are shown In Flgs. 3 and 4. From the flgures electron lrradlated slllcon, only the boron-oxygen It Is seen that the radlatlon reslstance of the InP defect exhlblts an lncreasln concentratlon wlth cells Is greater than GaAs cells under 1 MeV elec- decreaslng cell res1 stlvlty.31 Hence, the tron lrradlatlon.1*2 From Flg. 3 It 1s seen that decreased radlatlon reslstance, wlth decreaslng the radlatlon reslstance of the GaAs ptn cells cell base reslstlvlty, noted from Flg. 5, Is are slgnlflcantly greater than that of the ntp attrlbuted to the consequent lncreaslng concentra- L cells under the present lrradlatlons. For InP, the tlon of thls defect. Thls fundamental llmltatlon ntp cells exhlblt hlgher radlatlon reslstance presents a barrler to the use of low reslstlvlty (Flg. 4). The behavlor of the remalnlng cell boron-doped, slllcon solar cells In the space radl- parameters at constant hlgh fluence 1s sumrlzed atlon envlronment. In Tables I11 and IV. Radlatlon Effects In GaAs and InP PrevIous results have shown that, when plotted on a normallzed basls, the radlatlon reslstance of The superlor radlatlon reslstance of n+p InP cells 1s greater than that of elther GaAs or slllcon cells over the ptn conflguratlon has long Sl.2*13 The present data Is found to be In been an establlshed fact. However, the preference agreement wlth thls result (Flg.' 5). In the flg- of one conflguratlon over the other Is far from ure. data for the cell labeled InP (dark) and the establlshed for elther InP or GaAs. GaAs cells are obtalned from the present results. The cell labeled InP (dark) was lrradlated by 1 MeV For galllum arsenlde. the thlnner emltter electrons In the absence of llght. It has been reglon of the present ntp cell could lead to the found that lrradlatlon of InP cells ulth the cell predlctlon of Increased radlatlon reslstance for Illumlnated by llght results In Increased radlatlon thls cell. Thls would seem to follow from prevlous reslstance due to photolnjectlon of mlnorlty results on LPE grown GaAs cells where It was ~arr1ers.l~Thus, the cell labeled InP (llluml- observed that radlatlon reslstance tended to nated) was lrradlated under a llght lntenslty of Increase 4th decreaslng emltter thlckness.z2 70 mW/cm2. Data for thls latter cell was However, desplte the decreased emltter thlckness obtalned from Ref. 14, whlle that for the 10 n-cm the present nip GaAs cell exhlblts slgnlflcantly SI cell was obtalned from the JPL radlatlon hand- decreased radlatlon reslstance. To examlne thls b00k.l~ The low reslstlvlty slllcon cells behavlor In greater detall. we conslder the I-V (0.1 and 0.2 n-cm) are slmllar In deslgn to the curves of the Irradlated and unlrradlated GaAs hlgh efflclency slllcon cells In Table 111. Typl- cells (Flgs. 8 and 9). From Flg. 9. relatlvely cal temperature dependency runs for GaAs and InP small changes are lndlcated, for the pin cell, over a wlde range of temperature are shown In In both serles and shunt reslstance after Irradla- Flgs. 6 and 7. In general, over most of the tem- tlon. However. for the ntp cell, Flg. 8 lndl- perature range, maxlmum power (Pmax), Voc. and flll cates a relatlvely large decrease In shunt factor (FF) decrease wlth lncreaslng temperature reslstance and a relatlvely large Increase In whlle Isc Increases wlth temperature. serles reslstance. These effects result ln decreased solar cell output and thus decreased Dlscusslon efflclency. The relatlvely large decrease In Isc noted for the n+p cell (Table IV) 1s another Radlatlon Effects In Slllcon factor resultlng In decreased efflclency.
Load more

Recommended publications
  • TR-499: Indium Phosphide (CASRN 22398-80-7) in F344/N Rats And
    NTP TECHNICAL REPORT ON THE TOXICOLOGY AND CARCINOGENESIS STUDIES OF INDIUM PHOSPHIDE (CAS NO. 22398-80-7) IN F344/N RATS AND B6C3F1 MICE (INHALATION STUDIES) NATIONAL TOXICOLOGY PROGRAM P.O. Box 12233 Research Triangle Park, NC 27709 July 2001 NTP TR 499 NIH Publication No. 01-4433 U.S. DEPARTMENT OF HEALTH AND HUMAN SERVICES Public Health Service National Institutes of Health FOREWORD The National Toxicology Program (NTP) is made up of four charter agencies of the U.S. Department of Health and Human Services (DHHS): the National Cancer Institute (NCI), National Institutes of Health; the National Institute of Environmental Health Sciences (NIEHS), National Institutes of Health; the National Center for Toxicological Research (NCTR), Food and Drug Administration; and the National Institute for Occupational Safety and Health (NIOSH), Centers for Disease Control and Prevention. In July 1981, the Carcinogenesis Bioassay Testing Program, NCI, was transferred to the NIEHS. The NTP coordinates the relevant programs, staff, and resources from these Public Health Service agencies relating to basic and applied research and to biological assay development and validation. The NTP develops, evaluates, and disseminates scientific information about potentially toxic and hazardous chemicals. This knowledge is used for protecting the health of the American people and for the primary prevention of disease. The studies described in this Technical Report were performed under the direction of the NIEHS and were conducted in compliance with NTP laboratory health and safety requirements and must meet or exceed all applicable federal, state, and local health and safety regulations. Animal care and use were in accordance with the Public Health Service Policy on Humane Care and Use of Animals.
    [Show full text]
  • Transition Metal Phosphides for the Catalytic Hydrodeoxygenation of Waste Oils Into Green Diesel
    catalysts Review Transition Metal Phosphides for the Catalytic Hydrodeoxygenation of Waste Oils into Green Diesel M. Consuelo Alvarez-Galvan * , Jose M. Campos-Martin * and Jose L. G. Fierro * Energy and Sustainable Chemistry Group (EQS), Instituto de Catálisis y Petroleoquímica, CSIC, c/Marie Curie, 2 Cantoblanco, 28049 Madrid, Spain * Correspondence: [email protected] (M.C.A.-G.); [email protected] (J.M.C.-M.); jlgfi[email protected] (J.L.G.F.) Received: 28 February 2019; Accepted: 15 March 2019; Published: 22 March 2019 Abstract: Recently, catalysts based on transition metal phosphides (TMPs) have attracted increasing interest for their use in hydrodeoxygenation (HDO) processes destined to synthesize biofuels (green or renewable diesel) from waste vegetable oils and fats (known as hydrotreated vegetable oils (HVO)), or from bio-oils. This fossil-free diesel product is produced completely from renewable raw materials with exceptional quality. These efficient HDO catalysts present electronic properties similar to noble metals, are cost-efficient, and are more stable and resistant to the presence of water than other classical catalytic formulations used for hydrotreatment reactions based on transition metal sulfides, but they do not require the continuous supply of a sulfide source. TMPs develop a bifunctional character (metallic and acidic) and present tunable catalytic properties related to the metal type, phosphorous-metal ratio, support nature, texture properties, and so on. Here, the recent progress in TMP-based catalysts for HDO of waste oils is reviewed. First, the use of TMPs in catalysis is addressed; then, the general aspects of green diesel (from bio-oils or from waste vegetable oils and fats) production by HDO of nonedible oil compounds are presented; and, finally, we attempt to describe the main advances in the development of catalysts based on TMPs for HDO, with an emphasis on the influence of the nature of active phases and effects of phosphorous, promoters, and preparation methods on reactivity.
    [Show full text]
  • Binary and Ternary Transition-Metal Phosphides As Hydrodenitrogenation Catalysts
    Research Collection Doctoral Thesis Binary and ternary transition-metal phosphides as hydrodenitrogenation catalysts Author(s): Stinner, Christoph Publication Date: 2001 Permanent Link: https://doi.org/10.3929/ethz-a-004378279 Rights / License: In Copyright - Non-Commercial Use Permitted This page was generated automatically upon download from the ETH Zurich Research Collection. For more information please consult the Terms of use. ETH Library Diss. ETH No. 14422 Binary and Ternary Transition-Metal Phosphides as Hydrodenitrogenation Catalysts A dissertation submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Natural Sciences Presented by Christoph Stinner Dipl.-Chem. University of Bonn born February 27, 1969 in Troisdorf (NRW), Germany Accepted on the recommendation of Prof. Dr. Roel Prins, examiner Prof. Dr. Reinhard Nesper, co-examiner Dr. Thomas Weber, co-examiner Zurich 2001 I Contents Zusammenfassung V Abstract IX 1 Introduction 1 1.1 Motivation 1 1.2 Phosphides 4 1.2.1 General 4 1.2.2 Classification 4 1.2.3 Preparation 5 1.2.4 Properties 12 1.2.5 Applications and Uses 13 1.3 Scope of the Thesis 14 1.4 References 16 2 Characterization Methods 1 2.1 FT Raman Spectroscopy 21 2.2 Thermogravimetric Analysis 24 2.3 Temperature-Programmed Reduction 25 2.4 X-Ray Powder Diffractometry 26 2.5 Nitrogen Adsorption 28 2.6 Solid State Nuclear Magnetic Resonance Spectroscopy 28 2.7 Catalytic Test 33 2.8 References 36 3 Formation, Structure, and HDN Activity of Unsupported Molybdenum Phosphide 37 3.1 Introduction
    [Show full text]
  • Chemical Vapor Deposition of Heteroepitaxial Boron Phosphide Thin Films
    University of Tennessee, Knoxville TRACE: Tennessee Research and Creative Exchange Doctoral Dissertations Graduate School 12-2013 Chemical Vapor Deposition of Heteroepitaxial Boron Phosphide Thin Films John Daniel Brasfield University of Tennessee - Knoxville, [email protected] Follow this and additional works at: https://trace.tennessee.edu/utk_graddiss Part of the Semiconductor and Optical Materials Commons Recommended Citation Brasfield, John Daniel, "Chemical aporV Deposition of Heteroepitaxial Boron Phosphide Thin Films. " PhD diss., University of Tennessee, 2013. https://trace.tennessee.edu/utk_graddiss/2558 This Dissertation is brought to you for free and open access by the Graduate School at TRACE: Tennessee Research and Creative Exchange. It has been accepted for inclusion in Doctoral Dissertations by an authorized administrator of TRACE: Tennessee Research and Creative Exchange. For more information, please contact [email protected]. To the Graduate Council: I am submitting herewith a dissertation written by John Daniel Brasfield entitled "Chemical Vapor Deposition of Heteroepitaxial Boron Phosphide Thin Films." I have examined the final electronic copy of this dissertation for form and content and recommend that it be accepted in partial fulfillment of the equirr ements for the degree of Doctor of Philosophy, with a major in Chemistry. Charles S. Feigerle, Major Professor We have read this dissertation and recommend its acceptance: Laurence Miller, Frank Vogt, Ziling Xue Accepted for the Council: Carolyn R. Hodges Vice Provost and Dean of the Graduate School (Original signatures are on file with official studentecor r ds.) Chemical Vapor Deposition of Heteroepitaxial Boron Phosphide Thin Films A Dissertation Presented for the Doctor of Philosophy Degree The University of Tennessee, Knoxville John Daniel Brasfield December 2013 Copyright © 2013 by John Daniel Brasfield All rights reserved.
    [Show full text]
  • Subject Index
    SUBJECT INDEX Vol. 1: 1–698, Vol. 2: 699–1395, Vol. 3: 1397–2111, Vol. 4: 2113–2798, Vol. 5: 2799–3440. Page numbers suffixed by t and f refer to Tables and Figures respectively. Absorption spectra in aqueous solution, 752–770 of americium, 1364–1368 compounds of, 721–752 americium (III), 1364–1365, 1365f coordination complexes in solution, americium (IV), 1365 771–782 americium (V), 1366, 1367f history of, 699–700 americium (VI), 1366, 1367f isotope production, 702–703 americium (VII), 1367–1368, 1368f metallic state of, 717–721 of liquid plutonium, 963 in nature, 703–704 of neptunium, 763–766, 763f, 786–787 nuclear properties of, 700–702 neptunium (VII) ternary oxides, 729 separation and purification, 704–717 of plutonium plutonium hexafluoride, 1088, 1089f atomic properties of, 857–862 ions, 1113–1117, 1116t compounds of, 987–1108 plutonium (IV), 849 metal and intermetallic compounds of, polymerization, 1151, 1151f 862–987 tetrachloride, 1093–1094, 1094f natural occurrence of, 822–824 tribromide, 1099t, 1100 nuclear properties of, 815–822 trichloride, 1099, 1099t separation and purification of, 826–857 Accelerator mass spectrometry (AMS), of solution chemistry of, 1108–1203 neptunium, 790 Actinide elements Acetates atomic volumes of, 922–923, 923f of americium, 1322, 1323t extraction of of plutonium, 1177, 1180 DIDPA, 1276 Acetone, derived compounds, of americium, HDEHP, 1275 1322, 1323t, 1324 organophosphorus and Acids carbamoylphosphonate reagents, for Purex process, 711 1276–1278 for solvent extraction, 839 stripping of, 1280–1281 Actinide
    [Show full text]
  • Organometallic Pnictogen Chemistry
    Institut für Anorganische Chemie 2014 Fakultät für Chemie und Pharmazie | Sabine Reisinger aus Regensburg, geb. Scheuermayer am 15.07.1983 Studium: Chemie, Universität Regensburg Abschluss: Diplom Promotion: Prof. Dr. Manfred Scheer, Institut für Anorganische Chemie Sabine Reisinger Die vorliegende Arbeit enthält drei Kapitel zu unterschiedlichen Aspekten der metallorganischen Phosphor- und Arsen-Chemie. Zunächst werden Beiträge zur supramolekularen Chemie mit 5 Pn-Ligandkomplexen basierend auf [Cp*Fe(η -P5)] und 5 i [Cp*Fe(η - Pr3C3P2)] gezeigt, gefolgt von der Eisen-vermittelten Organometallic Pnictogen Aktivierung von P4, die zu einer selektiven C–P-Bindungsknüpfung führt, während das dritte Kapitel die Verwendung von Phosphor Chemistry – Three Aspects und Arsen als Donoratome in mehrkernigen Komplexen mit paramagnetischen Metallionen behandelt. Sabine Reisinger 2014 Alumniverein Chemie der Universität Regensburg E.V. [email protected] http://www.alumnichemie-uniregensburg.de Aspects Three – Chemistry Pnictogen Organometallic Fakultät für Chemie und Pharmazie ISBN 978-3-86845-118-4 Universität Regensburg Universitätsstraße 31 93053 Regensburg www.uni-regensburg.de 9 783868 451184 4 Sabine Reisinger Organometallic Pnictogen Chemistry – Three Aspects Organometallic Pnictogen Chemistry – Three Aspects Dissertation zur Erlangung des Doktorgrades der Naturwissenschaften (Dr. rer. nat.) der Fakultät für Chemie und Pharmazie der Universität Regensburg vorgelegt von Sabine Reisinger, geb. Scheuermayer Regensburg 2014 Die Arbeit wurde von Prof. Dr. Manfred Scheer angeleitet. Das Promotionsgesuch wurde am 20.06.2014 eingereicht. Das Kolloquium fand am 11.07.2014 statt. Prüfungsausschuss: Vorsitzender: Prof. Dr. Helmut Motschmann 1. Gutachter: Prof. Dr. Manfred Scheer 2. Gutachter: Prof. Dr. Henri Brunner weiterer Prüfer: Prof. Dr. Bernhard Dick Dissertationsreihe der Fakultät für Chemie und Pharmazie der Universität Regensburg, Band 4 Herausgegeben vom Alumniverein Chemie der Universität Regensburg e.V.
    [Show full text]
  • Chemical Names and CAS Numbers Final
    Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number C3H8O 1‐propanol C4H7BrO2 2‐bromobutyric acid 80‐58‐0 GeH3COOH 2‐germaacetic acid C4H10 2‐methylpropane 75‐28‐5 C3H8O 2‐propanol 67‐63‐0 C6H10O3 4‐acetylbutyric acid 448671 C4H7BrO2 4‐bromobutyric acid 2623‐87‐2 CH3CHO acetaldehyde CH3CONH2 acetamide C8H9NO2 acetaminophen 103‐90‐2 − C2H3O2 acetate ion − CH3COO acetate ion C2H4O2 acetic acid 64‐19‐7 CH3COOH acetic acid (CH3)2CO acetone CH3COCl acetyl chloride C2H2 acetylene 74‐86‐2 HCCH acetylene C9H8O4 acetylsalicylic acid 50‐78‐2 H2C(CH)CN acrylonitrile C3H7NO2 Ala C3H7NO2 alanine 56‐41‐7 NaAlSi3O3 albite AlSb aluminium antimonide 25152‐52‐7 AlAs aluminium arsenide 22831‐42‐1 AlBO2 aluminium borate 61279‐70‐7 AlBO aluminium boron oxide 12041‐48‐4 AlBr3 aluminium bromide 7727‐15‐3 AlBr3•6H2O aluminium bromide hexahydrate 2149397 AlCl4Cs aluminium caesium tetrachloride 17992‐03‐9 AlCl3 aluminium chloride (anhydrous) 7446‐70‐0 AlCl3•6H2O aluminium chloride hexahydrate 7784‐13‐6 AlClO aluminium chloride oxide 13596‐11‐7 AlB2 aluminium diboride 12041‐50‐8 AlF2 aluminium difluoride 13569‐23‐8 AlF2O aluminium difluoride oxide 38344‐66‐0 AlB12 aluminium dodecaboride 12041‐54‐2 Al2F6 aluminium fluoride 17949‐86‐9 AlF3 aluminium fluoride 7784‐18‐1 Al(CHO2)3 aluminium formate 7360‐53‐4 1 of 75 Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number Al(OH)3 aluminium hydroxide 21645‐51‐2 Al2I6 aluminium iodide 18898‐35‐6 AlI3 aluminium iodide 7784‐23‐8 AlBr aluminium monobromide 22359‐97‐3 AlCl aluminium monochloride
    [Show full text]
  • Agricultural Commodity Protection by Phosphine Fumigation: Programmatic Environmental Assessment Tools Annex
    AGRICULTURAL COMMODITY PROTECTION BY PHOSPHINE FUMIGATION PROGRAMMATIC ENVIRONMENTAL ASSESSMENT TOOLS ANNEX NOVEMBER 2013 This publication was produced for review by the United States Agency for International Development (USAID). It was prepared under USAID’s Global Environmental Management Support (GEMS) project. Cover photos: Phosphine fumigation monitoring equipment (top left), DIMEGSA Pest Control staff in Guatemala (top right), USAID food commodities stored in a warehouse (bottom). COMMODITY PROTECTION BY PHOSPHINE FUMIGATION IN USAID FOOD AID PROGRAMS PROGRAMMATIC ENVIRONMENTAL ASSESSMENT TOOLS ANNEX Updated December 2015 (original NOVEMBER 2013) Contract No.: AID-OAA-M-11-00021 Prepared for: Office of Food for Peace Bureau for Democracy, Conflict and Humanitarian Assistance United States Agency for International Development Prepared under: The Global Environmental Management Support Project (GEMS), Award Number AID-OAA-M-11-00021. The Cadmus Group, Inc., prime contractor (www.cadmusgroup.com). Sun Mountain International, principal partner (www.smtn.org). DISCLAIMER Until and unless this document is approved by USAID as a 22 CFR 216 Programmatic Environmental Assessment, the contents may not necessarily reflect the views of the United States Agency for International Development or the United States Government. TABLE OF CONTENTS ANNEX T-1: GUIDE: FUMIGATION COMPLIANCE GUIDANCE FOR USAID PARTNERS…..…….1 ANNEX T-2: TEMPLATE: FOOD COMMODITY PROTECTION PERSUAP FOR PHOSPHINE FUMIGATION & CONTACT PESTICIDES…………………………………………………..…………4 ANNEX
    [Show full text]
  • WP934SA/IYGD5V T-1 (3Mm) Tri-Level Circuit Board Indicator
    WP934SA/IYGD5V T-1 (3mm) Tri-Level Circuit Board Indicator DESCRIPTIONS PACKAGE DIMENSIONS The High Efficiency Red source color devices are LED1 : Red made with Gallium Arsenide Phosphide on Gallium LED2 : Yellow Phosphide Orange Light Emitting Diode LED3 : Green The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode Electrostatic discharge and power surge could damage the LEDs It is recommended to use a wrist band or anti-electrostatic glove when handling the LEDs All devices, equipments and machineries must be electrically grounded FEATURES Pre-trimmed leads for pc mounting Black case enhances contrast ratio High reliability life measured in years Housing UL rating: 94V-0 Housing material: Type 66 nylon 5V internal resistor RoHS compliant APPLICATIONS Notes: 1. All dimensions are in millimeters (inches). Status indicator 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. Illuminator 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. Signage applications Decorative and entertainment lighting Commercial and residential architectural lighting ATTENTION Observe precautions for handling electrostatic discharge sensitive devices SELECTION GUIDE Iv (mcd) V = 5V [2] Viewing Angle [1] Emitting Color Part Number Lens Type (Material) Min. Typ. 2θ1/2 12 25 ■ High Efficiency Red Red Diffused 50° (GaAsP/GaP) *6 *14 7 15 WP934SA/IYGD5V ■ Yellow (GaAsP/GaP) Yellow Diffused 50° *7 *15 12 25 ■ Green (GaP) Green Diffused 50° *12 *25 Notes: 1.
    [Show full text]
  • The Use of Aluminum Phosphide in Wildlife Damage Management
    Human Health and Ecological Risk Assessment for the Use of Wildlife Damage Management Methods by USDA-APHIS-Wildlife Services Chapter IX The Use of Aluminum Phosphide in Wildlife Damage Management July 2017 Peer Reviewed Final March 2020 THE USE OF ALUMINUM PHOSPHIDE IN WILDLIFE DAMAGE MANAGEMENT EXECUTIVE SUMMARY Aluminum phosphide is a fumigant used by USDA-APHIS-Wildlife Services (WS) to control various burrowing rodents and moles. Formulations for burrow treatments are in 3-g tablets or 600-mg pellets containing about 56% active ingredient. WS applicators place the tablets or pellets into the target species’ burrow and seal the burrow entrance with soil. Aluminum phosphide reacts with moisture in burrows to release phosphine gas, which is the toxin in the fumigant. WS applicators used aluminum phosphide to take 19 species of rodents and moles between FY11 and FY15 and treated an annual average of including prairie dogs, ground squirrels, pocket gophers, voles, and moles. WS annually averaged the known take of 54,095 target rodents and an estimated 2,333 vertebrate nontarget species with aluminum phosphide in 9 states. An average of 58,329 burrows was treated with the primary target species being black-tailed and Gunnison’s prairie dogs. APHIS evaluated the human health and ecological risk of aluminum phosphide under the WS use pattern for rodent and mole control. Although phosphine gas is toxic to humans, the risk to human health is low because inhalation exposure is slight for the underground applications. WS applicators wear proper personal protective equipment according to the pesticide label requirements, which reduces their exposure to aluminum phosphide and phosphine gas, and lowers the risk to their health.
    [Show full text]
  • LED) Materials and Challenges- a Brief Review
    6 IV April 2018 http://doi.org/10.22214/ijraset.2018.4723 International Journal for Research in Applied Science & Engineering Technology (IJRASET) ISSN: 2321-9653; IC Value: 45.98; SJ Impact Factor: 6.887 Volume 6 Issue IV, April 2018- Available at www.ijraset.com Different Types of in Light Emitting Diodes (LED) Materials and Challenges- A Brief Review BY Susan John1 1Dept Of Physics S. F. S College Nagpur 06, Maharashtra State. India I. INTRODUCTION LEDs are semiconductor devices, which produce light when current flows through them. It is a two-lead semiconductor light source. It is a p–n junction diode that emits light when activated. When a suitable current is applied electrons are able to recombine with electron holes within the device, releasing energy in the form of photons. This effect is called electroluminescence, and the color of the light is determined by the energy band gap of the semiconductor. LEDs are typically very small. In order to improve the efficiency many researches in LEDs and its phosphor has been taking place. However still many technical challenges such as conversion losses, color control, current efficiency droop, color shift, system reliability as well as in light distribution, dimming, thermal management and driver power supply performances etc need to be met in order to achieve low cost and high efficiency. [1] Keywords: Glare, blue hazard and semiconductor. I. DIFFERENT TYPES OF LEDS MATERIALS USED: A. Gallium Arsenide (GaAs) emits infra-red light B. Gallium Arsenide Phosphide (GaAsP) emits red to infra-red, orange light C. Gallium Phosphide (GaP) emits red, yellow and green light D.
    [Show full text]
  • Gallium Phosphide Light Sources and Photocells
    136 PHILIPS TECHNICAL REVIEW VOLUME 26 Gallium phosphide light sources and photocells H. G. Grimmeiss, W. Kischio and H. Scholz 621.383 :546.681 '183 Preparation and doping of GaP The methods of analysis used by us have failed to Amongst semiconductors with a relatively large detect the presence of carbon, which interferes with energy (band) gap, gallium phosphide has aroused luminescence in GaP, and this implies that the samples interest for various reasons. For one thing, by reason must have a e concentration of less than 5 X 10-4 %. of its 2.25 eV band gap, it is suitable for making P-N In the undoped state these crystals only exhibit very diodes which in some cases emit light in the visible weak luminescence. range of the spectrum. Our first task was to prepare gallium phosphide of high purity since, as will be made clear below, the efficiency of GaP light sources is very much dependent on the purity of the starting material. GaP is prepared by allowing gallium to react with phosphine; an ample supply of the latter gas, in a very high state of purity, can be obtained by decomposition of aluminium phos- phide with water. The aluminium phosphide is pre- pared by reacting aluminium with phosphorus. A mixture of pure aluminium and red phosphorus in an atomic ratio of 1: 1.1 is placed in an iron crucible and ignited. The reaction is fairly violent: some of the phosphorus evaporates and escapes into the atmo- sphere, where it burns spontaneously (fig. J). The aluminium phosphide yielded by the reaction is a porous sintered substance, yellow in colour.
    [Show full text]