Amplifier Frequency Response: Lower and Upper Cutoff Frequency
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Run Capacitor Info-98582
Run Cap Quiz-98582_Layout 1 4/16/15 10:26 AM Page 1 ® Run Capacitor Info WHAT IS A CAPACITOR? Very simply, a capacitor is a device that stores and discharges electrons. While you may hear capacitors referred to by a variety of names (condenser, run, start, oil, etc.) all capacitors are comprised of two or more metallic plates separated by an insulating material called a dielectric. PLATE 1 PLATE 2 A very simple capacitor can be made with two plates separated by a dielectric, in this PLATE 1 PLATE 2 case air, and connected to a source of DC current, a battery. Electrons will flow away from plate 1 and collect on plate 2, leaving it with an abundance of electrons, or a “charge”. Since current from a battery only flows one way, the capacitor plate will stay BATTERY + – charged this way unless something causes current flow. If we were to short across the plates with a screwdriver, the resulting spark would indicate the electrons “jumping” from plate 2 to plate 1 in an attempt to equalize. As soon as the screwdriver is removed, plate 2 will again collect a PLATE 1 PLATE 2 charge. + BATTERY – Now let’s connect our simple capacitor to a source of AC current and in series with the windings of an electric motor. Since AC current alternates, first one PLATE 1 PLATE 2 MOTOR plate, then the other would be charged and discharged in turn. First plate 1 is charged, then as the current reverses, a rush of electrons flow from plate 1 to plate 2 through the motor windings. -
Chapter 7: AC Transistor Amplifiers
Chapter 7: Transistors, part 2 Chapter 7: AC Transistor Amplifiers The transistor amplifiers that we studied in the last chapter have some serious problems for use in AC signals. Their most serious shortcoming is that there is a “dead region” where small signals do not turn on the transistor. So, if your signal is smaller than 0.6 V, or if it is negative, the transistor does not conduct and the amplifier does not work. Design goals for an AC amplifier Before moving on to making a better AC amplifier, let’s define some useful terms. We define the output range to be the range of possible output voltages. We refer to the maximum and minimum output voltages as the rail voltages and the output swing is the difference between the rail voltages. The input range is the range of input voltages that produce outputs which are not at either rail voltage. Our goal in designing an AC amplifier is to get an input range and output range which is symmetric around zero and ensure that there is not a dead region. To do this we need make sure that the transistor is in conduction for all of our input range. How does this work? We do it by adding an offset voltage to the input to make sure the voltage presented to the transistor’s base with no input signal, the resting or quiescent voltage , is well above ground. In lab 6, the function generator provided the offset, in this chapter we will show how to design an amplifier which provides its own offset. -
Switched-Capacitor Circuits
Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto ([email protected]) ([email protected]) University of Toronto 1 of 60 © D. Johns, K. Martin, 1997 Basic Building Blocks Opamps • Ideal opamps usually assumed. • Important non-idealities — dc gain: sets the accuracy of charge transfer, hence, transfer-function accuracy. — unity-gain freq, phase margin & slew-rate: sets the max clocking frequency. A general rule is that unity-gain freq should be 5 times (or more) higher than the clock-freq. — dc offset: Can create dc offset at output. Circuit techniques to combat this which also reduce 1/f noise. University of Toronto 2 of 60 © D. Johns, K. Martin, 1997 Basic Building Blocks Double-Poly Capacitors metal C1 metal poly1 Cp1 thin oxide bottom plate C1 poly2 Cp2 thick oxide C p1 Cp2 (substrate - ac ground) cross-section view equivalent circuit • Substantial parasitics with large bottom plate capacitance (20 percent of C1) • Also, metal-metal capacitors are used but have even larger parasitic capacitances. University of Toronto 3 of 60 © D. Johns, K. Martin, 1997 Basic Building Blocks Switches I I Symbol n-channel v1 v2 v1 v2 I transmission I I gate v1 v p-channel v 2 1 v2 I • Mosfet switches are good switches. — off-resistance near G: range — on-resistance in 100: to 5k: range (depends on transistor sizing) • However, have non-linear parasitic capacitances. University of Toronto 4 of 60 © D. Johns, K. Martin, 1997 Basic Building Blocks Non-Overlapping Clocks I1 T Von I I1 Voff n – 2 n – 1 n n + 1 tTe delay 1 I fs { --- delay V 2 T on I Voff 2 n – 32e n – 12e n + 12e tTe • Non-overlapping clocks — both clocks are never on at same time • Needed to ensure charge is not inadvertently lost. -
Power Electronics
Diodes and Transistors Semiconductors • Semiconductor devices are made of alternating layers of positively doped material (P) and negatively doped material (N). • Diodes are PN or NP, BJTs are PNP or NPN, IGBTs are PNPN. Other devices are more complex Diodes • A diode is a device which allows flow in one direction but not the other. • When conducting, the diodes create a voltage drop, kind of acting like a resistor • There are three main types of power diodes – Power Diode – Fast recovery diode – Schottky Diodes Power Diodes • Max properties: 1500V, 400A, 1kHz • Forward voltage drop of 0.7 V when on Diode circuit voltage measurements: (a) Forward biased. (b) Reverse biased. Fast Recovery Diodes • Max properties: similar to regular power diodes but recover time as low as 50ns • The following is a graph of a diode’s recovery time. trr is shorter for fast recovery diodes Schottky Diodes • Max properties: 400V, 400A • Very fast recovery time • Lower voltage drop when conducting than regular diodes • Ideal for high current low voltage applications Current vs Voltage Characteristics • All diodes have two main weaknesses – Leakage current when the diode is off. This is power loss – Voltage drop when the diode is conducting. This is directly converted to heat, i.e. power loss • Other problems to watch for: – Notice the reverse current in the recovery time graph. This can be limited through certain circuits. Ways Around Maximum Properties • To overcome maximum voltage, we can use the diodes in series. Here is a voltage sharing circuit • To overcome maximum current, we can use the diodes in parallel. -
Kirchhoff's Laws in Dynamic Circuits
Kirchhoff’s Laws in Dynamic Circuits Dynamic circuits are circuits that contain capacitors and inductors. Later we will learn to analyze some dynamic circuits by writing and solving differential equations. In these notes, we consider some simpler examples that can be solved using only Kirchhoff’s laws and the element equations of the capacitor and the inductor. Example 1: Consider this circuit Additionally, we are given the following representations of the voltage source voltage and one of the resistor voltages: ⎧⎧10 V fortt<< 0 2 V for 0 vvs ==⎨⎨and 1 −5t ⎩⎩20 V forte>+ 0 8 4 V fort> 0 We wish to express the capacitor current, i 2 , as a function of time, t. Plan: First, apply Kirchhoff’s voltage law (KVL) to the loop consisting of the source, resistor R1 and the capacitor to determine the capacitor voltage, v 2 , as a function of time, t. Next, use the element equation of the capacitor to determine the capacitor current as a function of time, t. Solution: Apply Kirchhoff’s voltage law (KVL) to the loop consisting of the source, resistor R1 and the capacitor to write ⎧ 8 V fort < 0 vvv12+−=ss0 ⇒ v2 =−= vv 1⎨ −5t ⎩16− 8et V for> 0 Use the element equation of the capacitor to write ⎧ 0 A fort < 0 dv22 dv ⎪ ⎧ 0 A fort < 0 iC2 ==0.025 =⎨⎨d −5t =−5t dt dt ⎪0.025() 16−> 8et for 0 ⎩1et A for> 0 ⎩ dt 1 Example 2: Consider this circuit where the resistor currents are given by ⎧⎧0.8 A fortt<< 0 0 A for 0 ii13==⎨⎨−−22ttand ⎩⎩0.8et−> 0.8 A for 0 −0.8 e A fort> 0 Express the inductor voltage, v 2 , as a function of time, t. -
Capacitive Voltage Transformers: Transient Overreach Concerns and Solutions for Distance Relaying
Capacitive Voltage Transformers: Transient Overreach Concerns and Solutions for Distance Relaying Daqing Hou and Jeff Roberts Schweitzer Engineering Laboratories, Inc. Revised edition released October 2010 Previously presented at the 1996 Canadian Conference on Electrical and Computer Engineering, May 1996, 50th Annual Georgia Tech Protective Relaying Conference, May 1996, and 49th Annual Conference for Protective Relay Engineers, April 1996 Previous revised edition released July 2000 Originally presented at the 22nd Annual Western Protective Relay Conference, October 1995 CAPACITIVE VOLTAGE TRANSFORMERS: TRANSIENT OVERREACH CONCERNS AND SOLUTIONS FOR DISTANCE RELAYING Daqing Hou and Jeff Roberts Schweitzer Engineering Laboratories, Inc. Pullman, W A USA ABSTRACT Capacitive Voltage Transformers (CVTs) are common in high-voltage transmission line applications. These same applications require fast, yet secure protection. However, as the requirement for faster protective relays grows, so does the concern over the poor transient response of some CVTs for certain system conditions. Solid-state and microprocessor relays can respond to a CVT transient due to their high operating speed and iflCreased sensitivity .This paper discusses CVT models whose purpose is to identify which major CVT components contribute to the CVT transient. Some surprises include a recom- mendation for CVT burden and the type offerroresonant-suppression circuit that gives the least CVT transient. This paper also reviews how the System Impedance Ratio (SIR) affects the CVT transient response. The higher the SIR, the worse the CVT transient for a given CVT . Finally, this paper discusses improvements in relaying logic. The new method of detecting CVT transients is more precise than past detection methods and does not penalize distance protection speed for close-in faults. -
Notes for Lab 1 (Bipolar (Junction) Transistor Lab)
ECE 327: Electronic Devices and Circuits Laboratory I Notes for Lab 1 (Bipolar (Junction) Transistor Lab) 1. Introduce bipolar junction transistors • “Transistor man” (from The Art of Electronics (2nd edition) by Horowitz and Hill) – Transistors are not “switches” – Base–emitter diode current sets collector–emitter resistance – Transistors are “dynamic resistors” (i.e., “transfer resistor”) – Act like closed switch in “saturation” mode – Act like open switch in “cutoff” mode – Act like current amplifier in “active” mode • Active-mode BJT model – Collector resistance is dynamically set so that collector current is β times base current – β is assumed to be very high (β ≈ 100–200 in this laboratory) – Under most conditions, base current is negligible, so collector and emitter current are equal – β ≈ hfe ≈ hFE – Good designs only depend on β being large – The active-mode model: ∗ Assumptions: · Must have vEC > 0.2 V (otherwise, in saturation) · Must have very low input impedance compared to βRE ∗ Consequences: · iB ≈ 0 · vE = vB ± 0.7 V · iC ≈ iE – Typically, use base and emitter voltages to find emitter current. Finish analysis by setting collector current equal to emitter current. • Symbols – Arrow represents base–emitter diode (i.e., emitter always has arrow) – npn transistor: Base–emitter diode is “not pointing in” – pnp transistor: Emitter–base diode “points in proudly” – See part pin-outs for easy wiring key • “Common” configurations: hold one terminal constant, vary a second, and use the third as output – common-collector ties collector -
ECE 255, MOSFET Basic Configurations
ECE 255, MOSFET Basic Configurations 8 March 2018 In this lecture, we will go back to Section 7.3, and the basic configurations of MOSFET amplifiers will be studied similar to that of BJT. Previously, it has been shown that with the transistor DC biased at the appropriate point (Q point or operating point), linear relations can be derived between the small voltage signal and current signal. We will continue this analysis with MOSFETs, starting with the common-source amplifier. 1 Common-Source (CS) Amplifier The common-source (CS) amplifier for MOSFET is the analogue of the common- emitter amplifier for BJT. Its popularity arises from its high gain, and that by cascading a number of them, larger amplification of the signal can be achieved. 1.1 Chararacteristic Parameters of the CS Amplifier Figure 1(a) shows the small-signal model for the common-source amplifier. Here, RD is considered part of the amplifier and is the resistance that one measures between the drain and the ground. The small-signal model can be replaced by its hybrid-π model as shown in Figure 1(b). Then the current induced in the output port is i = −gmvgs as indicated by the current source. Thus vo = −gmvgsRD (1.1) By inspection, one sees that Rin = 1; vi = vsig; vgs = vi (1.2) Thus the open-circuit voltage gain is vo Avo = = −gmRD (1.3) vi Printed on March 14, 2018 at 10 : 48: W.C. Chew and S.K. Gupta. 1 One can replace a linear circuit driven by a source by its Th´evenin equivalence. -
Aluminum Electrolytic Vs. Polymer – Two Technologies – Various Opportunities
Aluminum Electrolytic vs. Polymer – Two Technologies – Various Opportunities By Pierre Lohrber BU Manager Capacitors Wurth Electronics @APEC 2017 2017 WE eiCap @ APEC PSMA 1 Agenda Electrical Parameter Technology Comparison Application 2017 WE eiCap @ APEC PSMA 2 ESR – How to Calculate? ESR – Equivalent Series Resistance ESR causes heat generation within the capacitor when AC ripple is applied to the capacitor Maximum ESR is normally specified @ 120Hz or 100kHz, @20°C ESR can be calculated like below: ͕ͨ͢ 1 1 ͍̿͌ Ɣ Ɣ ͕ͨ͢ ∗ ͒ ͒ Ɣ Ɣ 2 ∗ ∗ ͚ ∗ ̽ 2 ∗ ∗ ͚ ∗ ̽ ! ∗ ̽ 2017 WE eiCap @ APEC PSMA 3 ESR – Temperature Characteristics Electrolytic Polymer Ta Polymer Al Ceramics 2017 WE eiCap @ APEC PSMA 4 Electrolytic Conductivity Aluminum Electrolytic – Caused by the liquid electrolyte the conductance response is deeply affected – Rated up to 0.04 S/cm Aluminum Polymer – Solid Polymer pushes the conductance response to much higher limits – Rated up to 4 S/cm 2017 WE eiCap @ APEC PSMA 5 Electrical Values – Who’s Best in Class? Aluminum Electrolytic ESR approx. 85m Ω Tantalum Polymer Ripple Current rating approx. ESR approx. 200m Ω 630mA Ripple Current rating approx. 1,900mA Aluminum Polymer ESR approx. 11m Ω Ripple Current rating approx. 5,500mA 2017 WE eiCap @ APEC PSMA 6 Ripple Current >> Temperature Rise Ripple current is the AC component of an applied source (SMPS) Ripple current causes heat inside the capacitor due to the dielectric losses Caused by the changing field strength and the current flow through the capacitor 2017 WE eiCap @ APEC PSMA 7 Impedance Z ͦ 1 ͔ Ɣ ͍̿͌ ͦ + (͒ −͒ )ͦ Ɣ ͍̿͌ ͦ + 2 ∗ ∗ ͚ ∗ ͍̿͆ − 2 ∗ ∗ ͚ ∗ ̽ 2017 WE eiCap @ APEC PSMA 8 Impedance Z Impedance over frequency added with ESR ratio 2017 WE eiCap @ APEC PSMA 9 Impedance @ High Frequencies Aluminum Polymer Capacitors have excellent high frequency characteristics ESR value is ultra low compared to Electrolytic’s and Tantalum’s within 100KHz~1MHz E.g. -
6 Insulated-Gate Field-Effect Transistors
Chapter 6 INSULATED-GATE FIELD-EFFECT TRANSISTORS Contents 6.1 Introduction ......................................301 6.2 Depletion-type IGFETs ...............................302 6.3 Enhancement-type IGFETs – PENDING .....................311 6.4 Active-mode operation – PENDING .......................311 6.5 The common-source amplifier – PENDING ...................312 6.6 The common-drain amplifier – PENDING ....................312 6.7 The common-gate amplifier – PENDING ....................312 6.8 Biasing techniques – PENDING ..........................312 6.9 Transistor ratings and packages – PENDING .................312 6.10 IGFET quirks – PENDING .............................313 6.11 MESFETs – PENDING ................................313 6.12 IGBTs ..........................................313 *** INCOMPLETE *** 6.1 Introduction As was stated in the last chapter, there is more than one type of field-effect transistor. The junction field-effect transistor, or JFET, uses voltage applied across a reverse-biased PN junc- tion to control the width of that junction’s depletion region, which then controls the conduc- tivity of a semiconductor channel through which the controlled current moves. Another type of field-effect device – the insulated gate field-effect transistor, or IGFET – exploits a similar principle of a depletion region controlling conductivity through a semiconductor channel, but it differs primarily from the JFET in that there is no direct connection between the gate lead 301 302 CHAPTER 6. INSULATED-GATE FIELD-EFFECT TRANSISTORS and the semiconductor material itself. Rather, the gate lead is insulated from the transistor body by a thin barrier, hence the term insulated gate. This insulating barrier acts like the di- electric layer of a capacitor, and allows gate-to-source voltage to influence the depletion region electrostatically rather than by direct connection. In addition to a choice of N-channel versus P-channel design, IGFETs come in two major types: enhancement and depletion. -
Measurement Error Estimation for Capacitive Voltage Transformer by Insulation Parameters
Article Measurement Error Estimation for Capacitive Voltage Transformer by Insulation Parameters Bin Chen 1, Lin Du 1,*, Kun Liu 2, Xianshun Chen 2, Fuzhou Zhang 2 and Feng Yang 1 1 State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China; [email protected] (B.C.); [email protected] (F.Y.) 2 Sichuan Electric Power Corporation Metering Center of State Grid, Chengdu 610045, China; [email protected] (K.L.); [email protected] (X.C.); [email protected] (F.Z.) * Correspondence: [email protected]; Tel.: +86-138-9606-1868 Academic Editor: K.T. Chau Received: 01 February 2017; Accepted: 08 March 2017; Published: 13 March 2017 Abstract: Measurement errors of a capacitive voltage transformer (CVT) are relevant to its equivalent parameters for which its capacitive divider contributes the most. In daily operation, dielectric aging, moisture, dielectric breakdown, etc., it will exert mixing effects on a capacitive divider’s insulation characteristics, leading to fluctuation in equivalent parameters which result in the measurement error. This paper proposes an equivalent circuit model to represent a CVT which incorporates insulation characteristics of a capacitive divider. After software simulation and laboratory experiments, the relationship between measurement errors and insulation parameters is obtained. It indicates that variation of insulation parameters in a CVT will cause a reasonable measurement error. From field tests and calculation, equivalent capacitance mainly affects magnitude error, while dielectric loss mainly affects phase error. As capacitance changes 0.2%, magnitude error can reach −0.2%. As dielectric loss factor changes 0.2%, phase error can reach 5′. -
Differential Amplifiers
www.getmyuni.com Operational Amplifiers: The operational amplifier is a direct-coupled high gain amplifier usable from 0 to over 1MH Z to which feedback is added to control its overall response characteristic i.e. gain and bandwidth. The op-amp exhibits the gain down to zero frequency. Such direct coupled (dc) amplifiers do not use blocking (coupling and by pass) capacitors since these would reduce the amplification to zero at zero frequency. Large by pass capacitors may be used but it is not possible to fabricate large capacitors on a IC chip. The capacitors fabricated are usually less than 20 pf. Transistor, diodes and resistors are also fabricated on the same chip. Differential Amplifiers: Differential amplifier is a basic building block of an op-amp. The function of a differential amplifier is to amplify the difference between two input signals. How the differential amplifier is developed? Let us consider two emitter-biased circuits as shown in fig. 1. Fig. 1 The two transistors Q1 and Q2 have identical characteristics. The resistances of the circuits are equal, i.e. RE1 = R E2, RC1 = R C2 and the magnitude of +VCC is equal to the magnitude of �VEE. These voltages are measured with respect to ground. To make a differential amplifier, the two circuits are connected as shown in fig. 1. The two +VCC and �VEE supply terminals are made common because they are same. The two emitters are also connected and the parallel combination of RE1 and RE2 is replaced by a resistance RE. The two input signals v1 & v2 are applied at the base of Q1 and at the base of Q2.