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AMORPHOUS SILICON SOLAR CELLS OBTAINED by HOT-WIRE CHEMICAL VAPOUR DEPOSITION David Soler I Vilamitjana

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AMORPHOUS SILICON SOLAR CELLS OBTAINED by HOT-WIRE CHEMICAL VAPOUR DEPOSITION David Soler I Vilamitjana DEPARTAMENT DE FÍSICA APLICADA I ÒPTICA Martí i Franquès 1, 08028 Barcelona AMORPHOUS SILICON SOLAR CELLS OBTAINED BY HOT-WIRE CHEMICAL VAPOUR DEPOSITION David Soler i Vilamitjana Memòria presentada per optar al grau de Doctor Barcelona, setembre de 2004 DEPARTAMENT DE FÍSICA APLICADA I ÒPTICA Martí i Franquès 1, 08028 Barcelona AMORPHOUS SILICON SOLAR CELLS OBTAINED BY HOT-WIRE CHEMICAL VAPOUR DEPOSITION David Soler i Vilamitjana Programa de doctorat: Tècniques Instrumentals de la Física i la Ciència de Materials Bienni: 1998-2000 Tutor: Enric Bertran Serra Director: Jordi Andreu Batallé Memòria presentada per optar al grau de Doctor Barcelona, setembre de 2004 Als meus pares This work has been carried out in the Photovoltaic Group of the Laboratory of Thin Film Materials of the Department of Applied Physics and Optics of the University of Barcelona. The Photovoltaic Group is a member of the Centre de Referència en Materials Avançats per a l’Energia de la Generalitat de Catalunya (CeRMAE). The presented work has been supervised by Dr. Jordi Andreu Batallé in the framework of the projects TIC98-0381-C02-01 and MAT2001-3541-C03-01 of the CICYT of the Spanish Government and with the aid of the project ENK5-CT2001-00552 of the European Commission, and supported by a pre-doctoral grant from the Spanish Government (Beca FPI). Amorphous Silicon Solar Cells obtained by Hot-Wire Chemical Vapour Deposition Contents Agraïments ...........................................................................................................................3 Outline of this thesis ............................................................................................................5 1. Introduction .....................................................................................................................7 1.1. Thin film technologies for photovoltaic applications.........................................7 1.2. Hydrogenated amorphous silicon as a photovoltaic material.............................9 1.3. Hot-Wire Chemical Vapour Deposition ...........................................................11 1.4. Thin film silicon solar cells technology ...........................................................14 1.5. a-Si:H at Universitat de Barcelona ..................................................................17 1.6. Aim of this work...............................................................................................18 2. The Hot-Wire CVD reactor. Characterization techniques.......................................19 2.1. The Hot-Wire CVD reactor ..............................................................................19 2.2. Characterization techniques..............................................................................23 2.2.1. Structural characterization .................................................................23 2.2.2. Electrical characterization..................................................................25 2.2.3. Optical characterization .....................................................................28 2.3. Device characterization ....................................................................................30 3. a-Si:H to nc-Si:H transition..........................................................................................37 3.1. a-Si:H on the onset of microcrystallinity..........................................................37 3.2. Influence of filament temperature ....................................................................38 3.3. Influence of pressure.........................................................................................46 3.4. Influence of hydrogen dilution .........................................................................49 3.5. Influence of substrate temperature....................................................................52 3.6. Summary...........................................................................................................55 4. Intrinsic a-Si:H by Hot-Wire CVD..............................................................................57 4.1. Device-quality intrinsic amorphous silicon......................................................57 4.2. Our intrinsic amorphous silicon .......................................................................59 4.2.1. Structural properties...........................................................................59 4.2.2. Electrical properties ...........................................................................66 4.2.3. Optical properties...............................................................................71 4.3. Deposition conditions .......................................................................................74 4.3.1. Influence of filament temperature......................................................74 4.3.2. Influence of pressure..........................................................................76 4.3.3. Influence of hydrogen dilution ..........................................................81 4.4. Summary...........................................................................................................84 5. Hot-Wire deposited doped material.............................................................................87 5.1. Introduction.......................................................................................................87 5.2. n-type material..................................................................................................88 5.3. p-type material..................................................................................................91 5.3.1. p-type a-Si:H......................................................................................92 1 Contents 5.3.2. p-type nc-Si:H....................................................................................99 5.3.3. p-type a-Si:H vs. p-type nc-Si:H .....................................................101 5.4. Substrate influence .........................................................................................102 5.4.1. Structural properties ........................................................................103 5.4.2. Electrical properties.........................................................................104 5.5. Summary.........................................................................................................108 6. Amorphous silicon solar cells.....................................................................................111 6.1.Introduction .....................................................................................................111 6.2. p-type a-Si:H front contact.............................................................................112 6.3. p-type nc-Si:H front contact...........................................................................122 6.4. p-type double structure: nc-Si:H/a-Si:H front contact ...................................124 6.5. Back reflector .................................................................................................128 6.6. Our final sep ...................................................................................................131 6.7. Device stability...............................................................................................135 6.8. Summary.........................................................................................................139 7. Solar cell simulation....................................................................................................141 7.1. p-i-n solar cell operation.................................................................................141 7.2. Numerical analysis .........................................................................................146 7.2.1. Optical absorption............................................................................146 7.2.2. DICE technique ...............................................................................148 7.2.3. Numerical resolution of the equations.............................................152 7.3. Summary.........................................................................................................159 Conclusions ......................................................................................................................161 Annexe: Additional applications....................................................................................165 A.1.Silicon based thin film transistors ..................................................................165 A.1.1. Introduction.....................................................................................165 A.1.2. Experimental...................................................................................167 A.1.3. Results.............................................................................................168 A.2. Heterojunction solar cells..............................................................................169 A.2.1. Introduction.....................................................................................169 A.2.2. Experimental...................................................................................171 A.2.3. Results.............................................................................................172 References ........................................................................................................................175 Acronym list.....................................................................................................................187
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