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Electrochemical Oxidation of Water on Synthetic Boron-Doped Diamond Thin film Anodes

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Electrochemical Oxidation of Water on Synthetic Boron-Doped Diamond Thin film Anodes View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by RERO DOC Digital Library Journal of Applied Electrochemistry 33: 151–154, 2003. 151 Ó 2003 Kluwer Academic Publishers. Printed in the Netherlands. Electrochemical oxidation of water on synthetic boron-doped diamond thin film anodes P-A. MICHAUD1, M. PANIZZA2, L. OUATTARA3, T. DIACO3, G. FOTI1 and Ch. COMNINELLIS1,* 1Swiss Federal Institute of Technology, ISP-BS, CH-1015 Lausanne, Switzerland 2Dipartimento di Ingegneria Chimica e di Processo, Universita` di Genova, P. le J.F. Kennedy 1, 16129 Genova, Italy 3Laboratoire de Chimie Physique, Universite´ Cocody, 22 Bp 582 Abidjan 22, Coˆte d’Ivoire (*author for correspondence, fax: þ41 21 693 3190, e-mail: christos.comninellis@epfl.ch) Received 24 March 2002; accepted in revised form 10 December 2002 Key words: boron-doped diamond electrode, hydroxyl radical, water oxidation Abstract Electrolysis in aqueous 1 M HClO4 and 1 M H2SO4 solutions has been carried out under galvanostatic conditions using boron-doped diamond electrodes (BDD). Analyses of the oxidation products have shown that in 1 M HClO4 the main reaction is oxygen evolution, while in H2SO4 the main reaction is the formation of H2S2O8. In both electrolytes small amounts of O3 and H2O2 are formed. Finally, a simplified mechanism involving hydroxyl radicals formed by water discharge has been proposed for water oxidation on boron-doped diamond anodes. 1. Introduction A few electrochemical studies have been made on synthetic boron-doped diamond films deposited on p- One of the most important scientific and technological silicon substrate with the goal of developing applications challenges faced by electrochemists is the design of in electroanalysis [12–16], reduction of nitrates in stable electrocatalytic anode materials. This is especially neutral or basic solutions [17], electrosynthesis [18, 19] illustrated by the case of the chlor-alkali industry. and waste water treatment oxidations [20–22]. However, Precious metal-coated anodes were first developed to the main interest of diamond electrodes results from improve anode performance. But their lack of stability their anodic behaviour in corrosive media. Outer-sphere under high anodic polarization, as well as their price, reactions have a kinetic behaviour which varies from lead to the development of so called dimensionally reversible (ferrocene/ferricinium) to irreversible process stable anodes (DSA) which consist of a thin active metal (CeIV/III) [23, 24]. oxide or mixed metal oxide layer on an inert substrate, The aim of the present study is to elucidate the usually titanium [1–3]. Many different coating compo- mechanism of water oxidation on boron-doped dia- sitions have been developed for various applications mond electrodes. Cyclic-voltammetry and electrolyses including selective synthesis and oxidation of organics were performed in acidic media and reaction products for the treatment of industrial effluents [4–9]. were analysed. Diamond films as electrode materials exhibit very high overpotentials for both hydrogen and oxygen evolution in aqueous electrolytes, leading to a large potential 2. Experimental details range in which the background current is very low, as well as unique properties of high stability under strong Boron-doped diamond (BDD) films were synthesised by oxidising conditions. Since the first publication concern- the hot filament chemical vapor deposition technique ing the electrochemistry of diamond [10], investigations (HF CVD) on single crystal p-type Si Æ100æ wafers (1– have focused on the ability of well-controlled growth of 3mW cm, Siltronix). The temperature range of the polycrystalline diamond films on conductive substrates filament was 2440–2560 °C and that of the substrate was and on high concentrations of doping compound to monitored at 830 °C. The reactive gas used was methane increase the film conductivity without deterioration of in an excess of dihydrogen (1% CH4 inH2). The doping the diamond structure. Most researches are related to gas was trimethylboron of concentration 1–3 ppm [12]. boron-doped diamond films. Doping can change the The gas mixture was supplied to the reaction chamber at electrical conductivity of diamond films from pure a flow rate of 5 l min)1 giving a growth rate of semiconducting to semimetal behaviour [11]. 0.24 lmh)1 for the diamond layer. The doping level 152 of boron in the diamond layer expressed as B/C ratio 120 3 -1 was about 3500 ppm. The obtained diamond film 2.8 230 mV dec 100 thickness was about 1 lm with a resistivity of 10– 2.6 30 mW cm. This HF CVD process produces columnar, E / V vs SHE 2.4 random textured, polycrystalline films terminated with 80 -2 2.2 hydrogen atoms which gave them a hydrophobic nature. 60 0 0.5 1 1.5 2 In order to stabilize the electrode surface and to obtain Log ( i / A m-2) i / A m reproducible results, the diamond electrode was pre- 40 treated by anodic polarization in 1 M HClO4 at ) 10 mA cm 2 for 30 min. This treatment made the 20 surface hydrophilic. Electrochemical measurements were made in a conventional three-electrode cell using 0 a computer controlled EG & G potentiostat (model M 0 0.5 1 1.5 2 2.5 3 273). Diamond was used as working electrode, Hg/ E / V vs SHE Hg2SO4 Á K2SO4 (sat) as reference and Pt as counter Fig. 2. Linear polarisation curves and Tafel plots of BDD recorded in electrode. The exposed apparent area of the BDD was 1 M H2SO4 (dotted line) and 1 M HClO4 (continuous line) at 25 °C. 1cm2. Scan rate 100 mV s)1. Bulk electrolysis were performed in a two-compart- ment electrolytic flow cell separated by a NafionÒ H2SO4 the main reaction is the formation of peroxodi- membrane. Diamond was used as anode, and zirconium sulfuric acid due to oxidation of the sulfuric acid as cathode. Both electrodes were discs (dia. 80 mm) supporting electrolyte (Equation 1) [19] in contrast to with a geometric area of 50 cm2 each. Anolyte and HClO where the main reaction is oxygen evolution due catholyte were stored in 500 ml thermoregulated glass 4 to water oxidation (Equation 2): tanks (T =25°C) and circulated through the electro- lytic cell by centrifugal pumps (Figure 1). Ozone and À þ 2H2SO4 ! H2S2O8 þ 2e þ 2H ð1Þ hydrogen peroxide concentrations were measured by iodometric titration and by potassium permanganate, À þ 2H2O ! O2 þ 4e þ 4H ð2Þ respectively. Also the value of Tafel slope is almost the same for both media (0.23 V decade)1) and is about twice as high as 3. Results and discussion on other classical electrodes (Pt, SnO2–Sb2O5) [25]. Such a value of Tafel slope is in agreement with those 3.1. Electrochemical measurements reported in the literature [26] and is probably due to the semimetal/semiconductor nature of the diamond film. Figure 2 shows linear polarisation curves and the Bulk electrolysis using 1 M HClO4 and 1 M H2SO4 corresponding Tafel plots of a p-Si/BDD electrode have shown that O3 and H2O2 have been formed in both obtained in 1 M HClO4 and 1 M H2SO4 at a scan rate of electrolytes. To evaluate the amount of O3 and H2O2 100 mV s)1. Current–potential curves are almost iden- formed during water oxidation in 1 M HClO4 several tical although the reactions that take place in perchloric electrolyses at different current density were performed. acid and sulfuric acid media are different. In fact, in Both the concentration of O3 in the gas leaving the anodic compartment and the concentration of H2O2 in the anolyte were determined during electrolysis. Fig- ure 3 shows the influence of current density on the gas phase O3 concentration produced by water oxidation 4 4 (Equation 3): À þ 2 3 3H2O ! O3 þ 6e þ 6H ð3Þ + _ Ozone concentration in the gas increases almost linearly from 110 to 800 ppm with applied current density in the 1 )2 range 230–1500 A m . Higher O3 concentration was obtained by Katsuki et al. [27] during electrolysis in sulfuric acid with much higher current density (Figure 3) 5 5 but, in this case, the current efficiency decreased. Current efficiency for ozone production on BDD Fig. 1. Experimental set-up for preparative electrolysis Legend: (1) electrochemical cell with BDD anode and Zr cathode; (2) thermoregu- anode was found to be lower than that obtained with lated anolyte reservoir; (3) thermoregulated catholyte reservoir; (4) gas PbO2 under the same conditions, although BDD has a analysers; (5) pumps. higher oxygen evolution overpotential. Similar results 153 8000 simplified model is proposed for water oxidation on BDD (Figure 5). According to this model, the first step is water 6000 discharge on BDD with the formation of hydroxyl radicals (Equation 5): 800 4000 ] / ppm 600 3 þ À 400 H2O ! OH þ H þ e ð5Þ [O ] / ppm 3 200 [O 2000 0 The electrogenerated hydroxyl radicals can be involved 0 500 1000 1500 i / A m-2 in four parallel reactions: 0 ii(i) Oxidation of supporting electrolyte: In the case of 0 10000 20000 30000 H2SO4 supporting electrolyte, electrogenerated hy- i / A m-2 droxyl radicals react with sulfuric acid giving per- oxodisulfuric acid (Equation 6): Fig. 3. Influence of current density on ozone concentration in the anodic gas during electrolysis with BDD at 25 °C. Comparison of our 2H2SO4 þ 2OH ! H2S2O8 þ 2H2O ð6Þ results in HClO4 1 M (h) with the experimental data obtained by Katsuki et al. [27] during electrolysis in 1 M H2SO4 (d). i(ii) H2O2 formation: as HClO4 supporting electrolyte is • were also obtained by other authors [28] using a stable towards OH oxidation, the main reaction is NafionÒ membrane as electrolyte.
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