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Terahertz Detectors Based on Superconducting Hot Electron Bolometers

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Terahertz Detectors Based on Superconducting Hot Electron Bolometers Editorial Board Supported by NSFC Honorary Editor General ZHOU GuangZhao (Zhou Guang Zhao) Editor General ZHU ZuoYan Institute of Hydrobiology, CAS Editor-in-Chief LI Wei Beihang University Executive Associate Editor-in-Chief WANG DongMing Centre National de la Recherche Scientifique Associate Editors-in-Chief GUO Lei Academy of Mathematics and Systems Science, CAS HUANG Ru Peking University QIN YuWen National Natural Science Foundation of China SUN ZengQi Tsinghua University YOU XiaoHu Southeast University ZHAO Wei University of Macau ZHAO QinPing Beihang University Members CHEN JianEr LI Joshua LeWei TSAI WeiTek Texas A&M University University of Electronic Science and Arizona State University Technology of China DU Richard LiMin WANG Ji Voxeasy Institute of Technology LIU DeRong National University of Defense Technology Institute of Automation, CAS GAO Wen WANG JiangZhou Peking University LIN HuiMin University of Kent Institute of Software, CAS GE ShuZhi Sam WANG Long National University of Singapore LIN ZongLi Peking University GUO GuangCan University of Virginia University of Science and Technology of WU YiRong LONG KePing Institute of Electronics, CAS China University of Science and Technology Beijing HAN WenBao XIE WeiXin Shenzhen University PLA Information Engineering University LU Jian Nanjing University HE JiFeng XU Jun Tsinghua University East China Normal University MEI Hong Peking University XU Ke HU WeiWu Beihang University Institute of Computing Technology, CAS MENG LuoMing Beijing University of Posts and YIN QinYe HU ZhanYi Telecommunications Xi’an Jiaotong University Institute of Automation, CAS PENG LianMao Peking University YING MingSheng IDA Tetsuo Tsinghua University University of Tsukuba PENG QunSheng Zhejiang University ZHA HongBin JI YueFeng Peking University Beijing University of Posts and Telecommu- SHEN ChangXiang nications Computing Technology Institute of China ZHANG HuanGuo Navy Wuhan University JIN Hai Huazhong University of Science and SUN JiaGuang ZHOU Dian Technology Tsinghua University The University of Texas at Dallas JIN YaQiu TANG ZhiMin ZHOU ZhiHua Fudan University Institute of Computing Technology, CAS Nanjing University JING ZhongLiang TIAN Jie ZHUANG YueTing Shanghai Jiao Tong University Institute of Automation, CAS Zhejiang University Editorial Staff SONG Fei FENG Jing SCIENCE CHINA Information Sciences . RESEARCH PAPER . January 2012 Vol. 55 No. 1: 64–71 Special Focus doi: 10.1007/s11432-011-4513-3 Terahertz detectors based on superconducting hot electron bolometers JIANG Yi, JIN BiaoBing, XU WeiWei, KANG Lin, CHEN Jian∗ &WUPeiHeng Research Institute of Superconductor Electronics, Nanjing University, Nanjing 210093,China Received August 11, 2011; accepted August 31, 2011 Abstract Low noise terahertz (THz) heterodyne detectors based on superconducting niobium nitride (NbN) hot electron bolometers (HEBs) have been studied. The HEB consists of a planar antenna and an NbN bridge connecting across the antenna’s inner terminals on a high-resistivity Si substrate. The double sideband noise temperatures at 4.2 K without corrections have been characterized from 0.65 to 3.1 THz. The excess quantum noise factor β of about 4 has been obtained, which agrees well with the calculated value. Allan variance of the HEB has been measured, and Allan time up to 20 s is obtained using a microwave feedback method. Also, the intermediate frequency gain bandwidth (GBW) was measured using two different methods, resulting in same GBW value of about 3.5 GHz. Keywords terahertz heterodyne detector, hot electron bolometer, noise temperature, stability, intermediate frequency gain bandwidth Citation Jiang Y, Jin B B, Xu W W, et al. Terahertz detectors based on superconducting hot electron bolome- ters. Sci China Inf Sci, 2012, 55: 64–71, doi: 10.1007/s11432-011-4513-3 1 Introduction Heterodyne detectors based on superconducting hot electron bolometers (HEBs) combine excellent noise performance and low local oscillator (LO) power requirment at terahertz (THz) waveband. A key advan- tage of the HEB is that it does not suffer from upper frequency limit set by the superconductor’s energy gap [1]. So at frequency higher than the energy gap frequency, which is about 1.4 THz for superconducting niobium nitride (NbN) film, the performance of the HEB should be better than that of superconductor- insulator-superconductor (SIS) heterodyne detectors [2]. This makes the HEBs highly attractive for both ground-based and space-based telescopes for astronomy [3]. The Herschel-HIFI, which is a part of the Herschel Space Observatory, used the HEBs with the double sideband (DSB) noise temperature (TN ) of about 10×hf/kB at f =1.41 − 1.92 THz [4], where h is the Planck constant, kB is the Boltzmann constant and f is the operating frequency. It can be expected that the HEBs will be used widely at THz waveband in the near future. However, according to the theoretical predictions or obtained results on the SIS or Schottky detectors, there is still some room for improvements as far as HEB’s noise performance, or intermediate frequency (IF) gain bandwidth (GBW) and stability are concerned. Here, we report our detailed studies on the low noise detectors based on NbN HEBs at THz frequency waveband. ∗Corresponding author (email: [email protected]) c Science China Press and Springer-Verlag Berlin Heidelberg 2012 info.scichina.com www.springerlink.com Jiang Y, et al. Sci China Inf Sci January 2012 Vol. 55 No. 1 65 Figure 1 The photo of the HEB and the NbN bridge in the center of the planar antenna. 2 Experimental 2.1 HEB chip The HEB chip consists of a superconducting bridge made from an ultra-thin NbN film and a logarithmic- spiral planar antenna with frequency independent impedance. The NbN bridge 4 μm in width, 0.4 μm in length and 4 nm in thickness is connected to the planar antenna to efficiently couple the THz signal as shown in Figure 1. The antenna is designed to work at 0.4–4 THz. The ultra-thin superconducting NbN film is deposited by DC magnetron sputtering on high-resistivity silicon (Si) substrate in Ar+N2 gas mixture while keeping the substrate at room temperature (RT) [5]. A root-mean-square roughness of approximately 0.42 nm is obtained for a 4.5 nm thick film over an area of 25 μm2. The critical current density of about 1.5×106 A/cm2 at 4.2 K and critical temperature of about 9 K are obtained. After depositing the ultra-thin film, it is covered with photoresist, and two square openings are positioned on the photoresist by electron beam lithography which determines the length of the bridge. In order to prevent degradation of the superconductivity of the bridge, an additional NbN film of 10 nm thickness is deposited on the opened NbN ultra-thin film as a buffer. Then a 50 nm thick gold film is deposited and the bridge’s width is defined by photolithography and reactive ion etching. At the end a complementary logarithmic-spiral antenna made of gold is connected to the two poles. The details of the fabrication process are reported in [6]. 2.2 Experimental setup We use a quasi-optical setup to couple THz signal from the source to the HEB. The HEB chip is glued to the center of the back of a hyper-hemispherical lens made of high-resistivity Si. Lenses with and without anti-reflection (AR) coatings are used in different setups of measurements. The lens is fixed in an oxygen free copper fixture which is thermally sunk to the 4.2 K cold plate of a liquid helium cryostat. We use an optically pumped far-infrared (FIR) gas laser (FIRL 100 from Edinburgh Instruments Ltd.) at 1.6, 2.5 and 3.1 THz or a microwave synthesizer with its multipliers at 0.65 THz as the LO sources. A mylar film with a thickness of 15 μm is used for the beam splitter (BS) and the mylar film with a thickness of 36 μm is used for the cryostat window. Two black polyethylene films with thickness of about 0.1 mm [7] and one G-110 Zitex, which is a porous polytetrafluoroethylene (PTFE) film1) ,areusedintheTHz input hole at 77 K thermal shielding frame as infrared (IR) filters. To reduce the environment noise, all the equipments except the laser and computer are placed in an RF shielding room. The cryostat is put on an optical table with anti-vibration structures. Schematic of the experimental setup is shown in Figure 2. We use an adjustable DC voltage source to bias the HEB. The bias voltage and current can be collected to the computer by a digital multimeter. The IF signal from the HEB is connected to a DC block, let to pass through an isolator, and then amplified by a cryogenic low noise amplifier (LNA) and an RT amplifier. In the noise temperature and stability measurements, we use a cryogenic LNA with gain of 30 dB, noise temperature of 6 K operating at 15 K 1) http://www.norton-films.com/zitexg-filter-membranes.aspx 66 Jiang Y, et al. Sci China Inf Sci January 2012 Vol. 55 No. 1 Figure 2 Schematics of the experimental setup. and the bandwidth of 1.3–1.7 GHz, and a home-made RT amplifier with gain of 50 dB and the bandwidth of 1–2 GHz. The IF signal goes through a band-pass (BP) filter, which is centered at 1.5 GHz and has a bandwidth of 100 MHz, is measured by a microwave power detector, and then collected by a computer. In the IF GBW measurements, we use a broadband LNA with the bandwidth of 1–12 GHz, the gain of 32 dB and noise temperature of less than 8 K operating at 11 K. The RT amplifier is Agilent 83020A, with a bandwidth of 2–26.5 GHz and gain of 30 dB.
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