Citation for published version: Hamilton, JA, Pugh, T, Johnson, AL, Kingsley, AJ & Richards, SP 2016, 'Cobalt(I) olefin complexes: precursors for metal-organic chemical vapor deposition of high purity cobalt metal thin films', Inorganic Chemistry, vol. 55, no. 14, pp. 7141-7151. https://doi.org/10.1021/acs.inorgchem.6b01146, https://doi.org/10.1021/acs.inorgchem.6b01146 DOI: 10.1021/acs.inorgchem.6b01146 http://dx.doi.org/10.1021/acs.inorgchem.6b01146 Publication date: 2016 Document Version Peer reviewed version Link to publication This document is the Accepted Manuscript version of a Published Work that appeared in final form in Inorganic Chemistry, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see DOI: 10.1021/acs.inorgchem.6b01146. University of Bath Alternative formats If you require this document in an alternative format, please contact:
[email protected] General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. Take down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Download date: 06. Oct. 2021 Table of Content Abstract and Graphic We report the synthesis and characterization of a family of eleven cobalt (I) metal precursors based around cyclopentadienyl and diene ligands. Low pressure metal-organic chemical vapor deposition (AP-MOCVD) was employed using the precursor cyclopentadienyl-cobalt(I)(isoprene) 1, to synthesis thin films of metallic cobalt on silicon substrates under an atmosphere (760 Torr) of hydrogen (H2) .