Herzlich Willkommen to the 14th International Conference on Group IV Photonics
On behalf of the organization committee, it is our pleasure to welcome you to the 14th Conference on Group IV Photonics (GFP 2017) that will take place from the 23rd to the 25th of August 2017 at the Grand Hyatt Berlin, Germany. It will be preceded by a workshop on Silicon Photonics Computer Aided Design (CAD) flows on the afternoon of the 22nd organized by leading simulation and design tool providers. An industry session on Wednesday afternoon is specially aimed at recent/future graduates as well as experienced researchers who want to be informed/stay abreast of opportunities and recent trends in industrial use of the technology. Best Paper, Best Student Paper and Best Poster Awards have been generously endowed by our sponsors. A sponsored Welcome Reception and a sponsored Gala Dinner on Thursday night will give participants the opportunity to connect in an informal setting. Since the inception of the conference in 2004, we have witnessed evolving foci as the Group IV Photonics field has matured and diversified into different materials, wavelengths and applications. This year, we have added a fourth topic, “Sensing and Instrumentation”, to the preexisting “Novel Materials, Nanophotonics and Processes”, “Photonic Devices” and “Application and Systems”, in order to emphasize the diversification of applications from a very communications centric focus. Beyond Sensing and Communications, Silicon Photonics for Quantum Technologies is also represented in this year’s conference. Notably this year, amongst the talks selected by the technical program committees, a good number of papers treat the extension of Group IV Photonics to visible wavelengths with help of Silicon Nitride waveguides, coherent light generation with (Si)GeSn materials, novel passive devices with subwavelength structures, as well as the direct growth of III- V compound semiconductors onto Silicon substrates. GFP remains a focused, single track conference giving researchers the opportunity to get a comprehensive update of the latest developments in the field in a structured manner without having to “cut corners”. We hope it will give you the opportunity to get new insights, reconnect with previous colleagues and make bonds with new research partners in a friendly and stimulating environment.
Bis bald in Berlin!
Jeremy Witzens Lars Zimmermann Conference General Chair Conference Program Chair RWTH Aachen University IHP Germany Germany
1 Group IV Photonics Conference Committee List 2017
General Chair Jeremy Witzens, RWTH Aachen University, Germany
Program Chair Lars Zimmermann, IHP, Germany
Novel Materials, Nanophotonics and Processes
Topic Co-Chairs Goran Mashanovich, University of Southampton, UK Jurgen Michel, Massachusetts Institute of Technology, USA
Committee Members Dan Buca, Forschungszentrum Jülich, Germany Tsuyoshi Horikawa, National Institute of Advanced Industrial Science and Technology, Japan Andrew Knights, McMaster University, Canada Chuanbo Li, Institute of Semiconductors, CAS, China Andrea Melloni, Politecnico di Milano, Italy Haisheng Rong, Intel, USA Mitsuru Takenaka, University of Tokyo, Japan Alexei Tchelnokov, CEA-LETI, France Li Yang, Futurewei, USA
Photonic Devices
Topic Co-Chairs Joyce Poon, University of Toronto, Canada Laurent Vivien, CNRS & University Paris Sud, France
Committee Members Charles Baudot, ST Microelectronics, France Pavel Cheben, National Research Council, Canada Il-Sug Chung, Technical University of Denmark, Denmark Jean Marc Fedeli, CEA-LETI, France Shayan Mookherjea, University of California at San Diego, USA Hon Ki Tsang, The Chinese University of Hong Kong, China Dries Van Thourhout, Ghent University, Belgium Ming Wu, University of California at Berkeley, USA Winnie Ye, Carleton University, Canada Linjie Zhou, Shanghai Jiao Tong University, China
2
Sensing and Instrumentation
Topic Co-Chairs Andrew Poon, The Hong Kong University of Science and Technology, China Christian Koos, Karlsruhe Institute of Technology, Germany
Committee Members Ali Adibi, Georgia Tech, USA Eric Cassan, Université Paris Sud, France Daoxin Dai, Zhejiang University, China Patrick Guo-Qiang Lo, IME, Singapore Siegfried Janz, National Research Council, Canada Laura Lechuga, Spanish National Research Council, Spain Junfeng Song, Jilin University, China Pol van Dorpe, KU-Leuven & IMEC, Belgium
Silicon Photonics Applications and Systems
Topic Co-Chairs Po Dong, Nokia – Bell Labs, USA Koji Yamada, National Institute of Advanced Industrial Science and Technology, Japan
Committee Members Wim Bogaerts, Ghent University, Belgium Long Chen, Acacia, USA Lukas Chrostowski, The University of British Columbia, Canada Hiroshi Fukuda, NTT, Japan Yu Yu, Huazhong University of Science and Technology, China Jason Liow, IME, Singapore Peter O'Brien, Tyndall Institute, Ireland Richard Piton, Seagate, UK Vladimir M. Stojanovic, University of California-Berkeley, USA
3 Table of Contents
Program-at-a-Glance...... Inside Front Cover
Welcome Letter...... 1
Committee List ...... 2
Exhibitor Guide...... 5
Sponsors ...... 8
Program...... 11
Photography Clause ...... 38
Author Index ...... 39
Hotel Map ...... Inside Back Cover
4 GROUP IV PHOTONICS CONFERENCE 2017 EXHIBITOR GUIDE ePIXfab-The European Silicon Photonics Alliance LioniX International CONTACT: ABDUL RAHIM CONTACT: DOUWE GEUZEBROEK ePIXfab-The European Silicon Photonics Alliance LioniX International iGent Tower, Technologiepark-Zwijnaarde 15 Hengelosestraat Wicherink Ghent, Belgium 9052 Enschede The Netherlands Phone: + 0032 471 581 274 7521AN Email: [email protected] Website: www.epixfab.eu Phone: + 31 53 20 30 053 Email: [email protected] ePIXfab is a European alliance of organizations that Website: www.lionix-int.com promotes silicon photonics science, technology, and application through a fabless model for the development LioniX International is a leading global provider of of silicon photonic circuits based on existing photonics customized microsystem solutions, in particular integrated and CMOS infrastructure. photonics-based, in scalable production volumes.
We provide customized solutions for OEM’s and System Integrators, from design to fully assembled modules, by vertical integration in scalable production volumes. We maintain our technology leadership secured by a strong IP position.
Information Gatekeepers, Inc. LioniX International focuses on Photonic Integrated CONTACT: HUI PAN Circuits (PIC) enabled modules based on its proprietary waveguide technology (TriPleX™), in addition to its other Information Gatekeepers, Inc. core competences micro-fluidics, opto-fluidics and 1340 Soldiers Field Road, Ste. 5 MEMS. As a vertical integrated company, we deliver a Boston, MA 02135 USA complete solution to our OEM customers: from initial design through volume manufacturing of products. Phone: + 617 782 5033 Email: [email protected] Our PIC modules and additional competences can be used Website: www.igigroup.com in a suite of applications in Telecom/Datacom, Life Science, Metrology and is offered as well in our Information Gatekeepers, Inc. is a publisher, trade show technology services. organizer, consultancy and information service provider in the fields of fiber optics, high-speed Internet, wireless, and emerging telecom markets. For more information, visit www.igigroup.com.
5 GROUP IV PHOTONICS CONFERENCE 2017 EXHIBITOR GUIDE
Nanosystec GmbH Photon Design Ltd. CONTACT: GUENTER HUMMELT CONTACT: DOMINIC GALLAGHER
Nanosystec GmbH Photon Design Ltd. Marie-Curie-Strasse 6 34 Leopold Street Gross Umstadt Germany Oxford 64823 United Kingdom OX4 1TW
Phone: + 49 6078 78254 0 Phone: + 44 1865 324990 Email: [email protected] Email: [email protected] Website: www.nanosystec.com Website: www.photond.com
Nanosystec offers several instruments which are very Photon Design was started in 1992 and supplies a wide useful for the work with silicon wafers and chips. range of innovative photonics CAD tools to most of the Nanotest is ideal for optical and electrical testing of chips World's leading photonic companies, universities and and for wafers up to 12“ diameter at temperatures up to government research labs, with customers in 35 countries 100° C. Nanoglue with Optospin is capable of active around the world. Our CAD products include tools for alignment of optical elements and fibers within a few both passive and active (semiconductor) optical seconds. Dispensing of the resin and UV curing is fully components and optical circuit modeling. automated. If the loss budget allows passive placement of optical fibers with our system Nanoplace is a viable option. One or several fibers are placed in front of the channels of the PIC and fixed with glue and subsequent UV curing.
PhoeniX Software Physik Instrumente (PI) GmbH & Co. KG CONTACT: NIEK NIJENHUIS CONTACT: SCOTT JORDAN
PhoeniX Software Physik Instrumente (PI) GmbH & Co. KG Hengelose Straat 705 Auf der Roemerstrassel Enschede Overijssel Karlsruhe Germany 76228 The Netherlands 7521 PA Phone: + 49 721 4846 1813 Phone: + 31 (0) 53 483 6460 Email: [email protected] Email: [email protected] Website: www.pi.ws Website: www.phoenixbv.com Well-known for the high quality of its products, PI Pioneering photonics design automation since 1991, today (Physik Instrumente) is one of the leading players in the Phoenix has a global presence and is a trusted, well global market for precision positioning technology for recognized partner for numerous organizations. We enable many years. PI has been developing and manufacturing easy and cost-effective realization of integrated photonics standard and OEM products with piezo or motor drives for chips and systems, by using our internally developed 40 years. superior products and services.
6 GROUP IV PHOTONICS CONFERENCE 2017 EXHIBITOR GUIDE
PIXAPP, MIRPHAB, PIX4life VPIphotonics GmbH CONTACT: ANA GONZALEZ CONTACT: VERA HILT
PIXAPP, MIRPHAB, PIX4 life VPIphotonics GmbH 17 Rue Hamelin Carnotstraße 6 Paris France Berlin Deutschland 10587 75016 Phone: + 0 30 398 258 Phone: + 34 669 68 71 96 Email: [email protected] Email: [email protected] Website: www.VPIphotonics.com Website: www.pixapp.eu, www.mirphab.eu, www.pix4life.eu VPIphotonics™ sets the industry standard for end-to-end photonic design automation comprising design, analysis and optimization of components, systems and networks. PIXAPP is the world’s first open-access PIC Assembly We provide professional simulation software supporting and Packaging Pilot Line and helps users exploit the requirements of active/passive integrated photonics and breakthrough advantages of PIC technologies. PIXAPP fiber optics applications, optical transmission system and consists of a highly-interdisciplinary team of Europe’s network applications, as well as cost-optimized equipment leading industrial & research organisations, and provides configuration. users with single-point access to PIC assembly and packaging.
PIX4life is a Silicon Nitride Photonic Integrated Circuit Pilot line for Life Science Applications in the Visible Range. It enables the production of low-cost, highly reproducible, and scalable products, aiming to lower barriers to entry for testing and validating biophotonics concepts. MIRPHAB (Mid InfraRed PHotonics devices fABrication for chemical sensing and spectroscopic applications) provides a platform to fabricate MID-IR sensors and to quickly introduce them into the market.
7 Group IV Photonics Conference 2017 Sponsors:
8 Group IV Photonics Conference 2017 Sponsors:
9 Group IV Photonics Conference 2017 Sponsors:
10 Final Program WEDNESDay, 23 aUGUST 2017
8:00 am–9:00 am Grand Ballroom a Session Wa Welcome / Plenary I Session Chair Lars Zimmermann, Leibniz Institute for Innovation in High-Performance Microelectronics (IHP)
8:00 am–8:15 am Grand Ballroom a Welcome Remarks
8:15 am–9:00 am (Plenary) Wa1 Enabling Chip-Scale Trace-Gas Sensing Systems with Silicon Photonics, W. Green, IBM T. J. Watson Research Center Tunable laser trace-gas spectroscopy has been effectively used in both environmental and medical applications, for its sensitivity and specificity. We’ll describe how contemporary silicon photonics manufacturing and assembly are leveraged for a cost-effective miniaturized spectroscopic sensor platform, and outline uses in fugitive methane emissions monitoring.
9:00 am–10:00 am Grand Ballroom a Session WB Mid-Infrared Integrated Photonics Session Chair Goran Mashanovich, University of Southampton
9:00 am–9:15 am WB1 Mid-Infrared n-Ge on Si Plasmonic Based Microbolometer Sensors, K. Gallacher, R. W. Millar, University of Glasgow, Glasgow, United Kingdom, V. Giliberti, E. Calandrini, L. Baldassarre, Sapienza Universitá di Roma, Rome, Italy, J. Frigerio, A. Ballabio, Politecnico di Milano, Como, Italy, E. Sakat, G. Pellegrini, Politecnico di Milano, Milano, Italy, G. Isella, Politecnico di Milano, Como, Italy, M. Ortolani, Sapienza Universitá di Roma, Rome, Italy, P. Biagioni, Politecnico di Milano, Milano, Italy and D. J. Paul, University of Glasgow, Glasgow, United Kingdom The detection and amplification of molecular ab- sorption lines from a chemical weapons simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. A free- standing Si0.25Ge0.75 microbolometer detector with n-Ge plasmonic antenna is demonstrated as an integrated mid- infrared plasmonic sensor.
11 9:15 am–9:30 am WB2 Broadband Mid Infrared Photonic Integrated Components Using a Ge-Rich SiGe Platform, V. Vakarin, J. M. Ramirez, Q. Liu, X. Le Roux, Université Paris-Sud, Orsay, France, J. Frigerio, A. Ballabio, Politecnico di Milano, Como, Italy, L. Vivien, Université Paris-Sud, Orsay, France, G. Isella, Politecnico di Milano, Como, Italy, and D. Marris- Morini, Université Paris-Sud, Orsay, France We demonstrate low-loss mid infrared photonic integrated components fabricated on a Ge-rich Si1-xGex platform. These devices show broadband operation over a wavelength range of at least from λ ≈ 5.1 µm to λ ≈ 8.6 µm, and comprise waveguides, multimode interference couplers and Mach- Zehnder interferometers.
9:30 am–9:45 am WB3 Mid-Infrared Ge-on-Si Electro-absorption Modulator, T. Li, University of Southampton, Southampton, United Kingdom and Peking University, Beijing, China, M. Nedeljkovic, N. Hattasan, A. Z. Khokhar, S. A. Reynolds, S. Stanković, M. Banakar, W. Cao, Z. Qu, C. G. Littlejohns, J. Soler Penades, K. Grabska, L. Mastronardi, D. J. Thomson, F. Y. Gardes, G. T. Reed, University of Southampton, Southampton, United Kingdom, H. Wu, Z. Zhou, Peking University, Beijing, China, and G. Z. Mashanovich, University of Southampton, Southampton, United Kingdom We present the first waveguide electro-absorption modulator in germanium-on-silicon material platform at 3.8 μm wavelength, based on free-carrier injection into a straight waveguide. The fabricated 1 mm long device has modulation depth of >35 dB at 7 V.
9:45 am–10:00 am WB4 Heavily-Doped Germanium on Silicon with activated Doping Exceeding 1020 cm–3 as an alternative to Gold for Mid-Infrared Plasmonics, J. Frigerio, A. Ballabio, Politecnico di Milano, Como, Italy, G. Pellegrini, Politecnico di Milano, Milan, Italy, K. Gallacher, University of Glasgow, Glasgow, United Kingdom, V. Gilberti, L. Baldassarre, Sapienza Università di Roma, Rome, Italy, R. Milazzo, Università di Padova, Padova, Italy, K. Huet, F. Mazzamuto, Laser System and Solutions of Europe, Grennevilliers, France, P. Biagioni, Politecnico di Milano, Milan, Italy, D. J. Paul, University of Glasgow, Glasgow, United Kingdom, M. Ortolani, Sapienza Università di Roma, Rome, Italy, E. Napolitani, Università di Padova and CNR-IMM Matis, Padova, Italy, and G. Isella, Politecnico di Milano, Como, Italy Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser thermal annealing to demonstrate activated doping levels >1020 cm–3 which allows most of the 3 to 20 µm mid-infrared sensing window to be covered with enhancements comparable to gold plasmonics.
10:00 am–10:30 am Grand Ballroom B Exhibits / Coffee Break
12 10:30 am–12:00 pm Grand Ballroom a Session WC Group IV Light Sources / GeSn Devices Session Chair Dan Buca, Forschungszentrum Jülich
10:30 am–11:00 am (Invited) WC1 Zener Tunnel-Injection for Ge Optical amplifiers, Lasers and Modulators, R. Koerner, I. A. Fischer, M. Oehme, C. Clausen, and J. Schulze, University of Stuttgart, Stuttgart, Germany We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios >14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.
11:00 am–11:15 am WC2 Lasing of Optically Pumped GeSn Micro-Structures Grown on Step-Graded GeSn Buffers, V. Reboud, Univ. Grenoble Alpes, CEA LETI, Grenoble, France, A. Gassenq, N. Pauc, Univ. Grenoble Alpes, CEA INAC, Grenoble, France, J. Aubin, Univ. Grenoble Alpes, CEA LETI, Grenoble, France, Q. M. Thai, Univ. Grenoble Alpes, CEA INAC, Grenoble, France, M. Bertrand, L. Milord, E. Martinez, C. Licitra, D. Rouchon, J. Rothman, Univ. Grenoble Alpes, CEA LETI, Grenoble, France, F. Armand Pilon, T. Zabel, H. Sigg, Paul Scherrer Institut, Villigen, Switzerland, A. Chelnokov, J. M. Hartmann, Univ. Grenoble Alpes, CEA LETI, Grenoble, France, and V. Calvo, Paul Scherrer Institut, Villigen, Switzerland, We report optically pumped lasing from GeSn micro-disks with high Sn content active GeSn layers. Buffer layers made by a step-growth show enhanced performances compared to conventional Ge strain relaxed buffers.
11:15 am–11:30 am WC3 Reduced Threshold Microdisk Lasers from GeSn/SiGeSn Heterostructures, D. Stange, N. von den Driesch, Forschungszentrum Juelich GmbH, Juelich, Germany, T. Zabel, F. Armand-Pilon, Paul Scherrer Institut, Villigen, Switzerland, B. Marzban, RWTH Aachen IPH, Aachen, Germany, D. Rainko, Forschungszentrum Juelich GmbH, Juelich, Germany, J.-M. Hartmann, Univ. Grenoble Alpes, Grenoble, France, G. Capellini, T. Schroeder, IHP, Frankfurt (Oder), Germany, H. Sigg, Paul Scherrer Institut, Villigen, Switzerland, J. Witzens, RWTH Aachen IPH, Aachen, Germany, D. Grützmacher, and D. Buca, Forschungszentrum Juelich GmbH, Juelich, Germany We present optically pumped lasing from group IV GeSn/SiGeSn heterostructures. A comparison between double heterostructure and multi-quantum-well microdisk cavities reveals advantages of the multi-well design. Strongly reduced lasing thresholds compared to values from bulk devices are observed.
13 11:30 am–11:45 am WC4 Cavity Mode analysis of Highly Strained Direct Bandgap Germanium Micro-Bridge Cavities, F. Armand-Pilon, T. Zabel, E. Marin, Paul Scherrer Institute, Villigen, Switzerland, C. Bonzon, ETH Zürich, Zürich, Switzerland, S. Tardif, A. Gassenq, N. Pauc, University Grenoble Alpes and CEA-INAC, Grenoble, France, V. Reboud, University Grenoble Alpes and CEA-LETI, Grenoble, France, V. Calvo, University Grenoble Alpes and CEA-INAC, Grenoble, France, J. M. Hartmann, J. Widiez, A. Chelnokov, University Grenoble Alpes and CEA-LETI, Grenoble, France, J. Faist, ETH Zürich, Zürich, Switzerland, and H. Sigg, Paul Scherrer Institute, Villigen, Switzerland Enhanced photoluminescence at a wavelength as high as 5 μm is obtained in uniaxial tensile strained GeOI micro-bridges cavities. We present, using excitation power dependent photoluminescence spectroscopy, a clear cavity mode pattern which indicates a loss reduction with increasing free carrier density.
11:45 am–12:00 pm WC5 Design of a High-Speed Germanium-Tin absorption Modulator at Mid-Infrared Wavelengths, R. Ponce, RWTH Aachen University, Aachen, Germany and Forschungszentrum Juelich GmbH, Juelich, Germany and Jülich Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT), S. Sharif Azadeh, RWTH Aachen University, Aachen, Germany and Jülich Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT), D. Stange, Forschungszentrum Juelich GmbH, Juelich, Germany and Jülich Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT), F. Merget, B. Marzban, RWTH Aachen University, Aachen, Germany and Jülich Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT), Z. Ikonic, University of Leeds, Leeds, England, D. Buca, Forschungszentrum Juelich GmbH, Juelich, Germany and Jülich Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT), and J. Witzens, RWTH Aachen University, Aachen, Germany and Jülich Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT)
We propose a high-speed electro-absorption modulator based on a direct bandgap Ge0.875Sn0.125 alloy operating at mid-infrared wavelengths. Enhancement of Franz-Keldysh-effect by field confinement to GeSn in a reverse-biased junction results in 3.2 dB insertion losses, 35 GHz bandwidth and 6 dB extinction ratio for 2 Vpp applied voltage.
12:00 pm–1:30 pm Lunch Break
14 1:30 pm–2:45 pm Grand Ballroom a Session WD Optical Transmitter and Filter Technology Session Chair Zhiping Zhou, Peking University
1:30 pm–1:45 pm WD1 High-Efficiency Silicon Mach-Zehnder Modulator with Vertical PN Junction Based on Fabrication-Friendly Strip-Loaded Waveguide, Y. Maegami, G. Cong, M. Ohno, M. Okano, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan, K. Itoh, N. Nishiyama, S. Arai, Tokyo Institute of Technology, Tokyo, Japan, and K. Yamada, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan We demonstrate a vertical p-n junction silicon Mach-Zehnder modulator constructed with hydrogenated amorphous silicon strip-loaded waveguides on a flat SOI platform. A 3-mm-long phase shifter shows 0.80- to 1.86-Vcm modulation efficiency, 7.3- to 16.9-dBV loss-efficiency product, 3-dB bandwidth of 17 GHz, and 25-Gb/s operation.
1:45 pm–2:00 pm WD2 High-Performance Si Optical Modulator with Strained p-SiGe Layer and Its application to 25 Gbps Optical Transceiver, J. Fujikata, K. Kinoshita, Photonics Electronics Technology Research Association (PETRA), Tsukuba, Japan, J. Han, The University of Tokyo, Tokyo, Japan, T. Horikawa, S. Takahashi, K. Yashiki, M. Kurihara, Y. Hagihara, Photonics Electronics Technology Research Association (PETRA), Tsukuba, Japan, M. Takenaka, The University of Tokyo, Tokyo, Japan, T. Nakamura, K. Kurata, and T. Mogami, Photonics Electronics Technology Research Association (PETRA), Tsukuba, Japan We developed a high performance Si optical modulator by applying a p-type-doped strained SiGe layer, which was integrated with high-performance Ge photodetector at around 1.3 μm wavelength. We demonstrated a high modulation efficiency of 1.0 Vcm and 25 Gbps operation with CMOS- driver.
2:00 pm–2:15 pm WD3 a Novel approach to Create a Tunable Fanoresonance with an Extinction Ratio over 40 dB, A. Li and W. Bogaerts, Ghent University-IMEC, Ghent, Belgium We experimentally demonstrate a novel method tomake a tunable Fano resonance. Based on a silicon microringwith two tunable reflectors inside, we are able to generate atunable Fano resonance with maximum extinction ratio over 40 dB and a slope rate over 700 dB/nm.
15 2:15 pm–2:30 pm WD4 Electrical Trimming of the Resonance of a Silicon Micro-Ring Resonator, A. P. Knights, Z. Wang, D. Paez, and L. Dow, McMaster University, Hamilton, ON, Canada Post-fabrication trimming of a silicon micro-ring resonator is demonstrated using an electrically mediated process. The resonance of a fully fabricated ring is permanently blue-shifted by 240 pm after diffusion from local reservoirs of boron dopant. Thermal energy is supplied by an integrated heater.
2:30 pm–2:45 pm WD5 High-Performance Sub-Wavelength Engineered Silicon Bragg-Rejection Filters, D. Pérez-Galacho, D. Oser, C. Alonso-Ramos, F. Mazeas, X. Le Roux, W. Zhang, D. Marris-Morini, Université Paris-Saclay, Orsay, France, L. Labonté, S. Tanzilli, Université Côte d’Azur, Nice, France, E. Cassan, and L. Vivien, Université Paris-Saclay, Orsay, France We present high-performance Bragg filters based on Si sub-wavelength engineering. We demonstrated a novel differential configuration approach that relaxes fabrication constraints. Single-etch filters with corrugation widths of 150 nm allowed measured wavelength rejection exceeding 40 dB with narrow bandwidths as low as 1.1 nm.
2:45 pm–3:30 pm Grand Ballroom B Exhibits / Coffee Break
3:30 pm–4:30 pm Grand Ballroom a Session WE Control and Tuning Technology Session Chair Yu Yu, Huazhong University of Science and Technology
3:30 pm–4:00 pm (Invited) WE1 active/Passive Photonic Components and Circuits on Silicon, T. Chu, Zhejiang University
4:00 pm–4:15 pm WE2 Novel adaptive Driving Method Enabling Better High-Frequency Performance for Silicon Mach-Zehnder Modulator, G. Cong, M. Ohno, Y. Maegami, M. Okano, and K. Yamada, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan We propose an adaptive distributed-bias driving method for silicon travelling-wave Mach-Zehnder modulators and achieved ~25% modulation efficiency enhancement at both 10 and 25 Gb/s with <3.5 Vpp, without optimizing horizontal PN-diodes. This method also suggests a new modulator scheme allowing efficiency improvement and design flexibilities.
16 4:15 pm–4:30 pm WE3 Intrinsic Resonance Stabilization in Depletion-Type Silicon Micro-Ring Modulators, Z. Wang, D. J. Paez, L. Dow, and A. P. Knights, McMaster University, Hamilton, ON, Canada A method is proposed for locking the resonance of a high-bandwidth, silicon micro-ring modulator using intrinsic-defect-mediated-photon-absorption. The photo-signal is generated by the modulator, and thus the need for a waveguide tap is negated. A digital PID loop is used for stabilization.
4:30 pm–5:30 pm Grand Ballroom a Industry Forum
5:30 pm–7:00 pm Grand Ballroom B Session WP Welcome Reception / Poster I Session Chair Lars Zimmerman, IHP, Germany
5:30 pm–7:00 pm WP1 Fabrication of Silicon Slot Waveguides with 10nm Wide Oxide Slot, K. Debnath, A. Z. Khokhar, G. T. Reed, and S. Saito, University of Southampton, Southampton, United Kingdom We propose and demonstrate a fabrication technique to realize extremely narrow dielectric slots in silicon waveguides. Using this method, we have demonstrated a silicon slot waveguide with 10 nm dielectric slot with a measured propagation loss of 13.6 dB/cm.
WP2 Phase Trimming of Mach-Zehnder Interferometers by Laser annealing of Germanium Implanted Waveguides, X. Chen, M. M. Milosevic, D. J. Thomson, A. Z. Khokhar, Y. Franz, A. F. J. Runge, S. Mailis, A. C. Peacock, and G. T. Reed, University of Southampton, Southampton, United Kingdom We demonstrate a new post-fabrication trimming technique to fine-tune the phase of integrated Mach-Zehnder Interferometers (MZIs), enabling permanent correction of typical fabrication based phase errors. Preliminary results demonstrate a phase trimming accuracy of 0.146 π.
WP3 Thermo-Optical Switching in Hybrid VO2/Si Waveguides by Lateral Displaced Microheaters, L. Sanchez, A. Rosa, A. Griol, Univ. Pol. de València, Valencia, Spain, M. Menghini, P. Homm, B. Van Bilzen, J.-P. Locquet, KU Leuven, Leuven, Belgium, C. Mai, L. Zimmermann, IHP, Frankfurt, Germany and P. Sanchis, Univ. Pol. de València, Valencia, Spain
A lateral displaced microheater is demonstrated for switching across the VO2 phase transition in ultra-short hybrid VO2/Si waveguides for both TE and TM light polarizations. Simulation and experimental results are obtained showing a very good agreement with a switching electrical power of around 10mW.
17 WP4 a NIR-LED Based on Tensile Strained, Heavily Doped Ge/Si µ-Strips Fabricated in a BiCMOS Pilot Line, G. Capellini, S. Lischke, L.-W. Nien, IHP, Frankfurt (Oder), Germany, J. Kreissl, IHP, Frankfurt (Oder), Germany and Technische Universität Berlin, Berlin, Germany, Y. Yamamoto, IHP, Frankfurt (Oder), Germany, M. Virgilio, IHP, Frankfurt (Oder), Germany and Università di Pisa, Pisa, Italy, J. Schäffner, W. M. Klesse, D. Wolansky, IHP, Frankfurt (Oder), Germany, K. Voigt, Technische Universität Berlin, Berlin, Germany, L. Zimmermann, A. Mai, B. Tillack, and T. Schroeder, IHP, Frankfurt (Oder), Germany We present an edge-light emitting diode based on highly doped Ge/Si µ-strips starined by a SiN top stressor. The device, manufactured in a BiCMOS pilot line, shows RT NIR electroluminescence in a spectral region extending from the C- to the U- telecom bands and beyond
WP5 Optical Proximity Correction in Geometry Sensitive Silicon Photonics Waveguide Crossings, D. Celo, P. Dumais, Huawei Technologies Canada Co., Ltd., Ottawa, ON, Canada, W. Liu, Huawei Technologies Co., Ltd., Shenzhen, China, C. Zhang, D. J. Goodwill, J. Jiang, and E. Bernier, Huawei Technologies Canada Co., Ltd., Ottawa, ON, Canada Silicon waveguide crossings using multi-mode interferometers are highly sensitive to geometry at the internal corners. Optical proximity correction was developed using design-of-experiments without sophisticated foundry modeling. This simple technique improved loss by a factor of 2, to <30 mdB, while maintaining flatness over C-band.
WP6 HWCVD a-Si:H Interlayer Slope Waveguide Coupler for Multilayer Silicon Photonics Platform, R. Petra, S. Z. Oo, A. Tarazona, R. Cernansky, S. Reynolds, D. J. Thomson, A. Z. Khokhar, A. Politi, G. Z. Mashanovich, G. T. Reed, and H. M. H. Chong, University of Southampton, Southampton, United Kingdom We present an interlayer slope waveguide, designed to guide light from one level to another in multilayer silicon photonics platform. The waveguide is fabricated using HWCVD a-Si:H at 350°C. Measured loss of 0.5 dB/slope was obtained at wavelength of 1550 nm for TE mode polarization.
WP7 Tensile Strained GeSn Mid-Infrared Light Emitters, R. W. Millar, D. C. S. Dumas, K. Gallacher, University of Glasgow, Glasgow, United Kingdom, P. Jahandar, M. Myronov, University of Warwick, Coventry, United Kingdom, and D. J. Paul, University of Glasgow, Glasgow, United Kingdom Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated into microdisks and strained using silicon nitride stressors. The strained disks are measured to be tensile by Raman spectroscopy, and demonstrate direct bandgap emission in the 3–5 μm gas sensing window.
WP8 The Electronic Band Structure of Ge1-xSnx in the Full Composition Range: Indirect, Direct, and Inverted Gaps Regimes, Band Offsets, and the Burstein-Moss Effect, P. Scharoch, M. P. Polak, and R. Kudrawiec, Wroclaw Univ. of Science and Technology, Wroclaw, Poland
A comprehensive study of the Ge1-xSnx alloy in the full composition range using state-of-the-art density functional theory methods has been performed. Various conclusions shedding new light on its properties, in relation to experiment, like gaps regimes, band offsets, and the Burstein-Moss effect, has been drawn.
18 WP9 Reduction of Optical Bleaching in Phosphorus Doped Ge Layer on Si, S. A. Srinivasan, IMEC, Heverlee, Belgium and Ghent University, Ghent, Belgium, C. Porret, M. Pantouvaki, IMEC, Heverlee, Belgium, Y. Shimura, IMEC, Heverlee, Belgium and Shizuoka University, Hamamatsu, Japan, P. Geiregat, Ghent University, Ghent, Belgium, R. Loo, J. Van Campenhout, IMEC, Heverlee, Belgium, D. Van Thourhout, Ghent University, Ghent, Belgium Optical bleaching is studied on undoped and highly doped Ge layer on Si using Transient Absorption Spectroscopy. Upon optical pumping, doped Ge showed a reduction in optical bleaching as compared to undoped Ge due to the homogeneous broadening effect in doped Ge.
WP10 Integration of Carbon Nanotubes on Silicon Photonics Resonators, E. Durán- Valdeiglesias, W. Zhang, T.-H.-C. Hoang, C. Alonso-Ramos, X. Le Roux, S. Serna, Université Paris-Saclay, Orsay, France, M. Balestrieri, Université Paris-Saclay, Gif-sur- Yvette, France, D. Marris-Morini, Université Paris-Saclay, Orsay, France, F. Intonti, F. Sarti, N. Caselli, F. La China, F. Biccari, M. Gurioli, University of Florence European Laboratory for Non-Linear Spectroscopy, Sesto Fiorentino (FI), Italy, A. Filoramo, Université Paris-Saclay, Gif-sur-Yvette, France, E. Cassan, and L. Vivien, Université Paris-Saclay, Orsay, France We report on the integration of carbon nanotubes in silicon micro-cavities to develop cost-effective light sources. Strong light coupling from carbon nanotubes was demonstrated into silicon photonics resonators, nanobeam cavities and photonic crystals.
WP11 Strained Silicon Photonics for Pockels Effect Based Modulation, M. Berciano, P. Damas, G. Marcaud, X. Le Roux, P. Crozat, C. Alonso-Ramos, D. Benedikovic, D. Morini, E. Cassan, and L. Vivien, Université Paris-Saclay, Orsay, France We present on experimental results of strain-induced Pockels effect in silicon based on Mach- Zehnder interferometer modulators. We theoretically studied both Pockels effect and carrier parasitic effect in silicon under an electric field. We demonstrated high speed Pockels-based optical modulation up to 25 GHz.
WP12 Broad Wavelength Generation and Conversion with Multi Modal Four Wave Mixing in Silicon Waveguides, S. Signorini, M. Mancinelli, University of Trento, Trento, Italy, M. Bernard, University of Trento, Trento, Italy and Bruno Kessler Foundation, Trento, Italy, M. Ghulinyan, G. Pucker, Bruno Kessler Foundation, Trento, Italy, and L. Pavesi, University of Trento, Trento, Italy We demonstrate spontaneous and stimulated Four Wave Mixing (FWM) in silicon waveguides with multi modal phase matching as a mean for tunable and large wavelength conversion and generation. We obtained a distance between the generated idler and signal of more than 750 nm.
WP13 High-Speed, High-Responsivity Ge Photodiode with NiSi Contacts for an advanced Photonic BiCMOS Technology, S. Lischke, D. Knoll, D. Wolansky, M. Kroh, A. Peczek, and L. Zimmermann, IHP, Frankfurt (Oder), Germany
We will show that contacting a high-performance Ge photodiode with NiSi instead of CoSi2 has no negative effect. This result strongly supports the development of an advanced photonic BiCMOS process where the RF performance of SiGe HBTs can take strong benefit from the “cold” NiSi.
19 WP14 Germanium-on-Silicon Waveguides for Mid-Infrared Photonic Sensing Chips, K. Gallacher, University of Glasgow, Glasgow, United Kingdom, L. Baldassarre, Sapienza University of Rome, Rome, Italy, R. W. Millar, University of Glasgow, Glasgow, United Kingdom, A. Sorgi, Sapienza University of Rome, Rome, Italy, V. Giliberti, Istituto Italiano di Tecnologia, Rome, Italy, J. Frigerio, G. Isella, Politecnico di Milano, Como, Italy, I. Figliolia, P. Biagioni, Politecnico di Milano, Milano, Italy, M. Michele, Sapienza University of Rome, Rome, Italy, and D. J. Paul, University of Glasgow, Glasgow, United Kingdom Germanium-on-silicon rib waveguides are modelled, fabricated and characterized with a novel near-field infrared spectroscopy technique that allows on-chip investigation of the waveguide losses at 5.8 um wavelength.
WP15 Manufacturing Variability Estimations for Deposited Silicon Photonic Circuits, T. Lipka and H. k. Trieu, Hamburg University of Technology, Hamburg, Germany We present a comprehensive study of deposited silicon microring resonators for photonic-integrated circuitry. Refractive index, thickness, and widths variations are estimated. The statistical deviations are sufficiently low to realize photonic circuits of high quality for instance deposited on various substrates and integrated with heterogeneous materials.
WP16 Tensile-Strained GeSn/SiGeSn Multiple Quantum Wells Laser Wrapped in Si3N4 Liner Stressor, Y. Liu, S. Zhang, X. Gao, Y. Wang, J. Zhang, G. Han and Y. Hao, Xidian University, Xi’an, China
A tensile-strained GeSn/SiGeSn multiple quantum well (MQW) laser wrapped in Si3N4 liner stressor is designed and characterized theoretically. The boosting effects of tensile strain introduced into the GeSn/SiGeSn MQW laser by Si3N4 liner stressor on the threshold current density and optical gain are demonstrated.
WP17 Hybrid NIR/MIR Beam Splitter (De)Multiplexer on SOI Platform, M.-S. Rouifed, Nanyang Technological University, Singapore, C. G. Littlejohns, Nanyang Technological University, Singapore and University of Southampton, Southampton, United Kingdom, G. X. Tina, H. Qiu, Nanyang Technological University, Singapore, J. Soler Penades, M. Nedeljkovic, University of Southampton, Southampton, United Kingdom, Z. Zhang, C. Liu, D. J. Thomson, G. Z. Mashanovich, G. T. Reed, University of Southampton, Southampton, United Kingdom, and H. Wang, Nanyang Technological University, Singapore, We present an ultra-compact MMI-based beam splitter (de)multiplexer for the NIR/MIR wavelength of 1.55 μm and 2 μm based on silicon-on-insulator (SOI) substrate. Simulations and fabrication of such device are performed and exhibits extremely low insertion losses, high contrasts and cross-talk for both wavelengths.
WP18 Carrier Dynamics analysis in Metal-Semiconductor-Metal Device for Mid-IR Silicon Photonics, A. T. L. Hui, Y. Ding, H. Hu, and M. Galili, Technical University of Denmark, Lyngby, Denmark A modelling platform for active carrier removal based on metal-semiconductor-metal structure is reported on analysis of carrier dynamics. The analysis reveals electric current hot spots exist in geometric singularities and curly trajectory of carriers should be considered when accurately estimating the effective carrier lifetime.
20 WP19 Cross-Slot Waveguide and Compact Straight Slotted Resonator Based Bio-Chemical Sensors, S. Ghosh, City, University of London, London, United Kingdom, C. Pan, Southeast University, Nanjing, China, and B. M. A. Rahman, City, University of London, London, United Kingdom Two novel designs of integrated bio-chemical sensor incorporating an integrated cross-slot waveguide and a compact straight vertical slotted resonator with high sensitivity and small physical footprint are reported.
WP20 Plasmonic Germanium Resonators for CMOS Compatible Terahertz Chem-Bio Sensing Platform, S. Guha, M. Kazmierczak, Leibniz Institute for Innovative Microelectronics, Berlin, Germany, M. Betthenhausen, University of Kassel, Kassel, Germany, O. Skibitzki, Leibniz Institute for Innovative Microelectronics, Berlin, Germany, C. You, University of Osnabrück, Osnabrück, Germany, J. Mitzloff, Leibniz Institute for Innovative Microelectronics, Berlin, Germany, J. Flesch, C. You J. Piehler, University of Osnabrück, Osnabrück, Germany, B. Witzigmann, University of Kassel, Kassel, Germany, and T. Schroeder, Leibniz Institute for Innovative Microelectronics, Berlin, Germany This work demonstrates plasmon based Germanium (Ge) resonators fabricated on standard BiCMOS technology operating at THz frequency range for chem-bio sensing. The Ge resonators operate at 0.55 THz and is shown to sense chem bio adlayers on top of them.
21 THURSDay, 24 aUGUST 2017
8:00 am–9:45 am Grand Ballroom a Session Tha Silicon Nitride Photonics for Sensing Session Chair Christian Koos, Karlsruhe Institute of Technology (KIT)
8:00 am–8:30 am (Invited) Tha1 EU Pilot Lines for Integrated Photonics, J.-M. Fedeli, S. Nicoletti, CEA-LETI, Grenoble, France, L. Lagae, IMEC, Leuven, Belgium, I. Artundo, VLC Photonics S.L., Valencia, Spain, and P. O’Brien, Tyndall, Cork, Ireland Three EU pilot lines dealing with integrated optics have been set up. PIX4life is focused on SiN PICs, MIRPHAB on optical sensors for chemical sensing, PIXAPP on photonics packaging.
8:30 am–9:00 am (Invited) Tha2 Spectroscopic Sensing and applications in Silicon Photonics, E. Ryckeboer, X. Nie, A. Dhakal, D. Martens, P. Bienstman, G. Roelkens, and R. Baets, Ghent University-IMEC, Ghent, Belgium We report on miniaturized spectroscopic sensors that are realized using Silicon Photonics technology. This technology relies on CMOS compatible processes to fabricate both Silicon and Silicon-Nitride based photonics integrated circuits. Various spectroscopic sensor designs and applications are discussed.
9:00 am–9:15 am Tha3 Ultra-wide Band (400–1700 nm) Integrated Spectrometer Based on arrayed Waveguide Gratings for Spectral Tissue Sensing, D. Geuzebroek, A. van Rees, E. Klein, LioniX International B.V., Enschede, The Netherlands, and K. Lawniczuk, Bright Photonics B.V., Eindhoven, The Netherlands We describe the use of photonic integrated circuits as a ultra-wide band spectrometer for spectral tissue sensing in the wavelength range of 400 to 1700nm. Measurements show that all individual arrayed waveguide gratings, fabricated in TriPleX™ technology, work as expected and demonstrate the broadband operation.
22 9:15 am–9:30 am Tha4 Tunable Index Back End of Line Platform for Enhanced Integrated Photonics, F. Y. Gardes, C. Lacava, K. Debnath, T. D. Bucio, M. Banakar, S. Stankovic, A. Alattili, A. Z. Khokhar, S. Saito, P. Petropoulos, University of Southampton, Southampton, United Kingdom, I. Molina-Fernández, R. Alir, A. Ortega-Moñux, J. G. Wangüemert-Pérez, Universidad de Málaga, Málaga, Spain, Y. Chen, J.-J. He, Zhejiang University, Hangzhou, China, P. Cheben, and J. H. Schmid, National Research Council Canada, Ottawa, ON, Canada We demonstrate a back end of line compatible SiN based material with tunable refractive index enabling low optical loss, high non-linear Kerr response, low index photonic crystals, high efficiency couplers, low loss waveguides and temperature tolerant MUX for DWDM.
9:30 am–9:45 am Tha5 Waveguide Optical Tweezers for Selective Cell Lysis, S. A. Kahn, A. C. Ceballos, A. K. Ellerbee Bowden, and O. Solgaard, Stanford University, Stanford, CA, USA Waveguide evanescent fields enable lysing of selected red blood cells. Cells are trapped on waveguides and are lysed by rapidly reducing the trapping forces. Red blood cells of different age require different levels of lysing power, allowing selective lysing of crenate cells.
9:45 am–10:15 am Grand Ballroom B Exhibits / Coffee Break
10:15 am–12:00 pm Grand Ballroom a Session ThB Nanofabrication of Novel Passive Devices Session Chair Kei May Lau, Hong Kong University of Science and Technology
10:15 am–10:45 am (Invited)
ThB1 a Heterogeneous III-V/Si3N4 Platform for Integrated Quantum and Nonlinear Photonics, K. Srinivasan and M. Davanco, National Institute of Standards and Technology, Gaithersburg, MD, USA We use heterogeneous integration to develop a platform capable of combining the deterministic single-photon generation and single-photon-level nonlinearities possible in single InAs quantum dot devices with the low-loss waveguiding and Kerr nonlinear frequency conversion available in stoichiometric silicon nitride photonics.
10:45 am–11:00 am ThB2 Sub-Wavelength Silicon Grating Metamaterial Ring Resonators, D. Benedikovic, M. Berciano, X. Le Roux, V. Vakarin, G. Marcaud, C. Alonso-Ramos, E. Cassan, D. Marris-Morini, and L. Vivien, Université Paris-Saclay, Orsay, France We report on experimental results of silicon micro-ring resonators based on non-resonant photonic metamaterial waveguides. High extinction ratio up to 30 dB and loaded Q-factors in a range of 1500 to 6000 were achieved at a wavelength of 1550 nm.
23 11:00 am–11:15 am ThB3 Bragg Grating Filter for Suspended Silicon Waveguides, C. Alonso-Ramos, X. Le Roux, D. Benedikovic, V. Vakarin, E. Durán-Valdeiglesias, D. Oser, D. Pérez-Galacho, E. Cassan, D. Marris-Morini, Université Paris-Saclay, Orsay, France, P. Cheben, National Research Council Canada, Ottawa, ON, Canada, and L. Vivien, Université Paris-Saclay, Orsay, France We present a novel suspended Si waveguide approach for hybrid near-infrared and mid-infrared operation. Large waveguide cross-sections allow mid-infrared propagation, while an original corrugation yields effective single-mode near-infrared operation. Exploiting this concept, we demonstrated Bragg filters with 4 nm bandwidth and 40 dB rejection.
11:15 am–11:30 am ThB4 Fully Suspended Mid-Infrared Racetrack Resonator with Subwavelength Grating Cladding, W. Zhou, The Chinese University of Hong Kong, Shatin, Hong Kong, Z. Cheng, The University of Tokyo, Tokyo, Japan, X. Wu, B. Zheng, X. Sun, and H. K. Tsang, The Chinese University of Hong Kong, Shatin, Hong Kong A fully suspended mid-infrared racetrack resonator is experimentally demonstrated. It has good mechanical stability and broad spectral range of transparency. The measured loaded optical Q factor is 16,440 at 2402.38 nm, with an extinction ratio of 11.83 dB.
11:30 am–11:45 am ThB5 Fabrication of Vertically Curved Si Surface Optical Coupler Coupling with 5-µm- Mode-Field-Diameter Optical Fiber, Y. Atsumi, T. Yoshida, E. Omoda, and Y. Sakakibara, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan A vertically curved Si surface optical coupler for high-numerical-aperture optical fibers with 5-µm- mode-field-diameter was fabricated. The dome-like SiO2 coupler-top could be successfully formed, and the coupler showed optical coupling with loss of 5.2 dB and the 0.5-dB bandwidth of 110 nm.
11:45 am–12:00 pm ThB6 Three-Mode Synthesis of Slab Gaussian Beam in Ultra-Low-Loss In-Plane Nanophotonic Silicon Waveguide Crossing, P. Dumais, D. J. Goodwill, D. Celo, J. Jiang, and E. Bernier, Huawei Technologies Canada Co., Ltd, Ottawa, ON, Canada We demonstrate experimentally a fundamentally new low-loss silicon nanophotonic in-plane crossing. The crossing operation uses a three-mode synthesis of a 1-D Gaussian beam. The measured loss is 0.007 dB ± 0.004 dB, which is the lowest reported loss for silicon waveguide crossings.
12:00 pm–1:30 pm Lunch Break
24 1:30 pm–3:00 pm Grand Ballroom a Session ThC Data Transmission Modules Session Chair Koji Yamada, National Institute of Advanced Industrial Science and Technology (AIST)
1:30 pm–2:00 pm (Invited) ThC1 Industrial Installation of Optical I/O Cores Based on Si Photonics, K. Kurata, Photonics Electronics Technology Research Association, Tsukuba, Japan
2:00 pm–2:15 pm ThC2 25 Gb/s Error-Free Transmission with a Packaged Chipset Integrating a III-V/SOI DFB Laser, an Electro-absorption Modulator and a Semiconductor Optical amplifier, I. Ghorbel, A. Gallet, A. Shen, D. Carrara, D. Make, G. Levaufre, G.-H. Duan, III-V Lab, a joint lab of Nokia, Thales and CEA, Palaiseau, France, S. Olivier, C. Jany, S. Malhouitre, C. Kopp, CEA LETI, Grenoble, France, C. Eason and P. O’Brien, Tyndall National Institute, Cork, Ireland We report on the first hybrid III-V on silicon integration of a DFB laser, an electro-absorption modulator and a semiconductor optical amplifier. We packaged the fabricated chipset and validated the module through 25 Gb/s error-free transmissions for short reach communication applications.
2:15 pm–2:30 pm ThC3 Co-Integration of a Temperature Tolerant Low Impedance Resonantly Enhanced Silicon Photonics Modulator, A. Moscoso-Mártir, J. Nojic, S. Romero-García, S. Sharif Azadeh, B. Shen, RWTH Aachen University, Aachen, Germany, D. E. Rasmussen, M. Nielsen, Mellanox Technologies, Roskilde, Denmark, A. Sandomirsky, A. Badihi, S. Rockman, Mellanox Technologies, Yokneam, Israel, F. Merget, RWTH Aachen University, Aachen, Germany, R. Setter, E. Mentovich, Mellanox Technologies, Yokneam, Israel, and J. Witzens, RWTH Aachen University, Aachen, Germany, We report on an optically wideband, resonantly enhanced Mach-Zehnder modulator co-integrated with a 4Ω output impedance, 28 Gbd driver from Mellanox Technologies. Error free transmission is demonstrated, at 14 Gbps (25 Gbps), in 4 nm (3 nm) wide optical wavelength range at a 10 mW (20 mW) laser output power level.
25 2:30 pm–2:45 pm ThC4 1.5-μm Directly Modulated Transmission Over 66 km of SSMF with an Integrated Hybrid III-V/SOI DFB Laser, V. Cristofori, F. Da Ros, Technical University of Denmark, Lyngby, Denmark, M. E. Chaibi, University of Rennes, Lannion, France, Y. Ding, Technical University of Denmark, Lyngby, Denmark, L. Bramerie, University of Rennes, Lannion, France, A. Shen, A. Gallet, G.-H. Duan, III-V Lab, a joint lab of Nokia, Thales and CEA, Palaiseau, France, K. Hassan, S. Olivier, CEA-LETI, Grenoble, France, L. K. Oxenløwe, Technical University of Denmark, Lyngby, Denmark, and C. Peucheret, University of Rennes, Lannion, France A hybrid III-V/SOI directly modulated DFB laser operating at 1.5 μm is fabricated, showing a side mode suppression ratio above 50 dB and a 3-dB bandwidth of 12 GHz. Error-free transmission (BER<10–9) at 10 Gb/s over 66-km SSMF is demonstrated without dispersion compensation and FEC.
2:45 pm–3:00 pm ThC5 High Reflection Tolerance of Quantum Dot Distributed Feedback Lasers for Silicon Photonics Transmitters, N. Hatori, K. Mizutani, S.-H. Jeong, Y. Tanaka, and K. Kurata, Photonics Electronics Technology Research Association (PETRA), Tsukuba, Japan We demonstrated high reflection tolerance of a quantum dot distributed feedback laser. Laser characteristics of single mode operation of 40 dB SMSR and high power operation over 15mW were obtained, and significant improvements of tolerance up to –30 dB near end reflection were successfully achieved.
3:00 pm–3:30 pm Grand Ballroom B Exhibits / Coffee Break
3:30 pm–4:15 pm Grand Ballroom a Session ThD Nonlinear Photonics Session Chair Li Yang, Huawei
3:30 pm–3:45 pm
ThD1 CMOS Compatible USRN:Si7N3 for Supercontinuum Generation, Parametric amplification and Four-wave Mixing, T. Wang, Singapore University of Technology and Design, Singapore and Chinese Academy of Sciences, Beijing, China, K. J. A. Ooi, Singapore University of Technology and Design, Singapore, D. K. T. Ng, Agency for Science, Technology and Research (A*STAR), Singapore, A. K. L. Chee, Massachusetts Institute of Technology, Cambridge, MA, USA, and D. T. H. Tan, Singapore University of Technology and Design, Singapore
We experimentally demonstrate a CMOS compatible optical parametric amplifier based on Si7N3 waveguides which are compositionally tailored that the 1550 nm wavelength resides within the multi–photon regime, while possessing large nonlinear parameter of 550 W−1/m, 500 times larger than that in Si3N4.
26 3:45 pm–4:00 pm ThD2 Linear and Third Order Nonlinear Optical Properties of GeSbS Chalcogenide Integrated Waveguides, S. Serna, Université Paris-Saclay, Orsay, France and Université Paris Saclay, Palaiseau, France, H. Lin, Massachusetts Institute of Technology-MIT, Cambridge, MA, USA, C. Alonso-Ramos, Université Paris-Saclay, Orsay, France, A. Yadav, University of Central Florida, Orlando, FL, USA, X. Le Roux, Université Paris- Saclay, Orsay, France, K. Richardson, University of Central Florida, Orlando, FL, USA, E. Cassan, Université Paris-Saclay, Orsay, France, N. Dubreuil, Université Paris Saclay, Palaiseau, France, J. Hu, Massachusetts Institute of Technology-MIT, Cambridge, MA, USA, and L. Vivien, Université Paris-Saclay, Orsay, France We report on the linear and nonlinear measurements of GeSbS chalcogenide glasses in waveguide configuration. Single-mode waveguides and ring resonators have been characterized in linear and nonlinear optical regimes around 1.58 µm wavelength demonstrating the interest of using this material for ultrahigh-bandwidth optical communications systems.
4:00 pm–4:15 pm ThD3 Third Order Nonlinear Optical Properties of Ge-Rich SiGe Waveguides, S. Serna, Université Paris-Saclay, Orsay, France and Université Paris Saclay, Palaiseau, France, V. Vakarin, J. M. Ramirez, X. Le Roux, Université Paris-Saclay, Orsay, France, J. Frigerio, A. Ballabio, Politecnico di Milano, Como, Italy, L. Vivien, Université Paris- Saclay, Orsay, France, G. Isella, Politecnico di Milano, Como, Italy, E. Cassan, Université Paris-Saclay, Orsay, France, N. Dubreuil, Université Paris Saclay, Palaiseau, France, and D. Marris-Morini, Université Paris-Saclay, Orsay, France
We report on the first third order nonlinear experimental characterization of Ge-rich Si1-xGex waveguides, with Germanium concentrations x ranging from 0.7 to 0.9. These results will provide helpful insights to assist the design of nonlinear integrated optical devices in the near- and mid-IR wavelength ranges.
4:15 pm–5:45 pm Grand Ballroom B Session ThP Poster II Session Chair Lars Zimmerman, IHP, Germany
4:15 pm–5:45 pm ThP1 WDM-compatible 2×2 Optical Switch for Mode-Division Multiplexing on a Silicon Chip, H. Jia, T. Zhou, Chinese Academy of Sciences, Beijing, China and University of Chinese Academy of Sciences, Beijing, China, L. Zhang, J. Ding, Chinese Academy of Sciences, Beijing, China, and L. Yang, Chinese Academy of Sciences, Beijing, China and University of Chinese Academy of Sciences, Beijing, China We propose a WDM and MDM compatible 2×2 switch on a silicon chip. It is composed of mode multiplexers, 2×2 single mode optical switch elements, and mode de-multiplexers. We demonstrate a prototype which can manipulate four spatial modes with broad wavelength span.
27 ThP2 Long Delay Optical Feedback Sensitivity of Hybrid III-V/SOI Directly Modulated DFB Lasers, A. Gallet, Université Paris-Saclay, Orsay, France and III-V Lab, a joint lab of Alcatel-Lucent, Thales and CEA, Palaiseau, France, K. Schires, H. Huang, M. Song, III-V Lab, a joint lab of Alcatel-Lucent, Thales and CEA, Palaiseau, France, A. Accard, D. Make, Université Paris-Saclay, Orsay, France, S. Olivier, CEA LETI, Grenoble, France, G.-H. Duan, III-V Lab, a joint lab of Alcatel-Lucent, Thales and CEA, Palaiseau, France, and F. Grillot, III-V Lab, a joint lab of Alcatel-Lucent, Thales and CEA, Palaiseau, France and University of New Mexico, Albuquerque, NM, USA Hybrid III-V/SOI DFB lasers subjected to external optical feedback is analyzed. Its impact on optical spectrum, eye diagram and bit error rate (BER) is discussed.
ThP3 a PaM-4 Optical Receiver Based on a Silicon Photonic Quantizer, W. Xu, Shanghai Jiao Tong University, Shanghai, China, J. Gao, University of Rochester, Rochester, NY, USA, P. Ji, Y. Sun, W. He, Shanghai Jiao Tong University, Shanghai, China, and H. Wu, University of Rochester, Rochester, NY, USA We propose a new PAM4 receiver architecture based on a silicon photonic quantizer that converts a PAM-4 optical signal into multiple weighted electrical signals. Circuit simulation of this receiver at 50-Gbps demonstrates its feasibility and advantages.
ThP4 Passive and active Wavelength Trimming of Temperature-Insensitive Silicon MZI, J.-M. Lee, M.-S. Kim, J. T. Ahn, ETRI, Daejeon, Korea, L. Adelmini, D. Fowler, C. Kopp, CEA LETI, Grenoble, France, C. J Oton, Scuola Superiore Sant’Anna, Pisa, Italy and CNIT, Pisa, Italy, and F. Testa, Ericsson Telecomunicazioni S.p.A., Pisa, Italy Temperature-insensitive silicon MZI with local heaters is fabricated by DUV lithography. Temperature dependence is less than 5 pm/C but the wavelength can be tuned by the local heater at the efficiency of 24 mW/FSR. The results are discussed in comparison with permanent wavelength trimming by thermal annealing.
ThP5 Silicon PaM-4 Optical Modulator Driven by Two Binary Electrical Signals with Different Peak-to-Peak Voltages, L. Zheng, Chinese Academy of Sciences, Beijing, China and University of Chinese Academy of Sciences, Beijing, China, J. Ding, Chinese Academy of Sciences, Beijing, China, S. Shao, Chinese Academy of Sciences, Beijing, China and University of Chinese Academy of Sciences, Beijing, China, L. Zhang, Chinese Academy of Sciences, Beijing, China, and L. Yang, Chinese Academy of Sciences, Beijing, China and University of Chinese Academy of Sciences, Beijing, China We demonstrate a silicon PAM-4 optical modulator which is driven by two uncorrelated binary electrical signals with different peak-to-peak voltages. The device can work at 32 Gbaud in the wavelength range from 1525 nm to 1565 nm.
ThP6 a Method to Optimizing Optical Switch Topology for Photonic Network-on-Chip, T. Zhou, H. Jia, Y. Xia, and L. Yang, Chinese Academy of Sciences, Beijing, China and University of Chinese Academy of Sciences, Beijing, China, We propose a method to optimize the optical switch by substituting some of the switch elements with crossings so that the topology can be simplified and the insertion loss can also be effective minimized. A six-port optical switch prototype is designed and fabricated on silicon.
28 ThP7 Silicon Photonic Wavelength Tunable Laser Diode with Low Loss Direct Heating Phase Shifter, T. Kita, Y. Chiba, and H. Yamada, Tohoku University, Sendai-shi, Japan We proposed and demonstrated a compact and low propagation loss thermo-optical phase shifter using a multi-mode interference for wavelength tunable laser diode.
ThP8 Demonstration of Low Polarization Dependent Loss of 1.3 μm Two Dimensional Grating Coupler, Y. Sobu, S.-H. Jeong, and Y. Tanaka, Photonics Electronics Technology Research Association (PETRA), Tsukuba, Japan Reduction of the polarization dependent loss (PDL) of 1.3 μm two dimensional grating coupler (2D-GC) was demonstrated by using slanted arrays and cross shaped scatterers. The PDL of 2D-GC was measured to be <0.5 dB over a 40 nm range at 1.3 μm.
ThP9 Broadband Sub-Wavelength Grating Coupler for O-Band application, Y. Wang, L. Xu, A. Kumar, D. Patel, Z. Xing, R. Li, M. G. Saber, Y. D’Mello, E. El-Fiky, and D. V. Plant, McGill University, Montreal, QC, Canada We demonstrate a broadband sub-wavelength grating coupler for the O-band application, which has a simulated coupling efficiency of –3.3 dB with 3-dB bandwidth of 78 nm and a measured coupling efficiency of –4.5 dB with a 3-dB bandwidth of 65 nm for fundamental TE mode.
ThP10 2D Integrating Cell Waveguide Platform Employing Ultra-Long Optical Path Lengths, L. S. Fohrmann, G. Sommer, Hamburg University of Technology, Hamburg, Germany, G. Pitruzzello, T. F. Krauss, University of York, York, United Kingdom, A. Y. Petrov, Hamburg University of Technology, Hamburg, Germany and ITMO University, St. Petersburg, Russia, and M. Eich, Hamburg University of Technology, Hamburg, Germany and Helmholtz-Zentrum Geesthacht, Geesthacht, Germany A 2D integrating cell waveguide platform is presented where ultra-long optical path lengths in a small area are realized by multiple reflections of a guided signal at PhC boundaries. In experiments, path lengths of 25 cm are demonstrated in integrating cells with 1.8 mm radius.
ThP11 Design and Integration of an O-Band Silicon Nitride aWG for CWDM applications, S. Guerber, STMicroelectronics SAS, Crolles, France and Université Paris-Saclay, Orsay, France, C. Alonso-Ramos, D. Perez-Galacho, X. Le Roux, Université Paris-Saclay, Orsay, France, N. Vulliet, S. Crémer, STMicroelectronics SAS, Crolles, France, D. Marris-Morini, Université Paris-Saclay, Orsay, France, F. Boeuf, STMicroelectronics SAS, Crolles, France, L. Vivien, Université Paris-Saclay, Orsay, France, and C. Baudot, STMicroelectronics SAS, Crolles, France Experimental demonstration of an O-band four channel CWDM silicon nitride AWG is reported. Specificity of low order array has been explored through multiple devices among which insertion loss below 2.3dB, crosstalk level as high as 37dB and polarization insensitive spectral response flattening is obtained.
ThP12 Optimized 32-Channel Silicon Hybrid Demultiplexer Fabricated with CMOS Technology, J. Wang, S. Deng, C. Y. Wong, Y. Wen, W. Wei, T. Wang, G. N. Liu, E. Zhou, and L. Liu, Huawei Technologies Co., Ltd., Shenzhen, China We presented a 32-channel silicon hybrid demultiplexer fabricated with CMOS technology. Double- etched mode converter and wide arrayed waveguide are used to improve AWG performances while the counter-tapered coupler is optimized for broadband mode multiplexing.
29 ThP13 a Novel Scheme to Excite SOI Slot Waveguide Mode, V. Mere, R. Kallega, and S. K. Selvaraja, Indian Institute of Science, Bangalore, India This paper presents a novel robust method to excite a slot waveguide mode. We experimentally demonstrate the fundamental slot-mode excitation in a Si slot-waveguide ring resonator. Furthermore, we also demonstrate nearly athermal (12 pm/°C) behaviour of PMMA filled slotted ring resonator
ThP14 Sealed and Compact Fiber Links to Integrated Photonics Using Grating Couplers, N. Hoppe, M. Haug, T. Polder, M. Félix Rosa, W. Vogel, P. Scheck, L. Rathgeber, D. Widmann, and M. Berroth, University of Stuttgart, Stuttgart, Germany We present a sealed, permanent, compact and efficient optical fiber-to-chip interface utilizing the wide-spread grating coupler. The easily produced fiber link is based on the reflection in an angle- polished fiber with a reflective metal coating. Efficiencies for different coupling methods to grating couplers are compared.
ThP15 Faraday Rotation in Silicon Waveguides, D. Jalas, N. Hakemi, Hamburg University of Technology, Hamburg, Germany, M. Cherchi, M. Harjanne, VTT Technical Research Centre of Finland, Espoo, Finland, A. Y. Petrov, Hamburg University of Technology, Hamburg, Germany and ITMO University, St. Petersburg, Russia, and M. Eich, Hamburg University of Technology, Hamburg, Germany and Helmholtz-Zentrum Geesthacht, Geesthacht, Germany We investigate the possibility of using silicon waveguides as Faraday rotators for optical isolators. We employ multimode waveguides with a square cross-section. This approach offers the opportunity to introduce integrated nonreciprocal components into the silicon-on-insulator platform without complication of an additional magneto-optical material.
ThP16 Study of Backend Waveguide arrays for adiabatic Coupling to Si Waveguides, K. Voigt, Technische Universität Berlin, Berlin, Germany and IHP, Frankfurt (Oder), Germany, V. Brulis, Photon Design, Oxford, United Kingdom, K. Petermann, Technische Universität Berlin, Berlin, Germany and L. Zimmermann, Technische Universität Berlin, Berlin, Germany and IHP, Frankfurt (Oder), Germany We compare the performances of different spot size converter (SSC) designs consisting of backend waveguide arrays (“dot-like”, “cross-like, “stripes”, “box”) at the facet, adiabatically coupled to tapered Si waveguides. For the study, we use SiON waveguides and a low index step “box” waveguide.
ThP17 Spectral Variation analysis for Silicon Grating Couplers Fabricated on a 300-mm SOI Wafer, T. Horikawa, Photonics Electronics Technology Research Association (PETRA), Tsukuba, Japan and National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan, D. Shimura, J. Ushida, Y. Sobu, A. Shiina, M. Tokushima, S.-H. Jeong, K. Kinoshita, and T. Mogami, Photonics Electronics Technology Research Association (PETRA), Tsukuba, Japan
Spectral variation behavior for many grating couplers is experimentally investigated. It was found that the coupling wavelength is shifted by fabrication deviations in grating structure, and grating depth variation in 300-mm wafer processes is precisely derived by numerical analysis for coupling wavelength variation.
30 ThP18 Electro-Optic Phase Modulators Based on Transparent-Conducting-Oxide Loaded Silicon Waveguides, G. Sinatkas, I. Skandalos, T. Christopoulos, and E. E. Kriezis, Aristotle University of Thessaloniki, Thessaloniki, Greece Electro-optic phase modulation schemes are investigated by inducing carrier-concentration changes in transparent conducting oxide semiconductors, integrated in well-established silicon-photonic platforms. By exploiting the epsilon-near-zero effect, binary phase-shift keying modulation is manifested, resulting in high-speed modulation solutions of reduced footprint, compared to the conventional all-silicon designs.
ThP19 advanced High Speed Slow-Light Silicon Modulators in the O-Band for Low Power Optical Interconnects in Data Centers, A. Zanzi, A. Rosa, A. Griol, P. Sanchis, J. Marti, and A. Brimont, Universitat Politècnica València, Valencia, Spain This paper presents the design and preliminary results of a low power, compact and high-speed modulator in the O-band featuring apodized slow-light structures and a slow-wave RF design. The device is a candidate for future single mode optical interconnects in large-scale data centers
ThP20 an Ultra-Compact MMI-Based Wavelength Diplexer Employing Subwavelength Grating, L. Liu, Q. Deng, and Z. Zhou, Peking University, Beijing, China Through the refractive index engineering of the subwavelength grating, an ultra-compact multimode interference based diplexer is proposed and demonstrated. It is 43.4 μm in length, only ~30% of its conventional counterpart and displays a wide 1dB bandwidth >120nm.
ThP21 Tunable Mode Hybridisation in Compact SOI Coupled Ring Cavity, A. Pandey and S. K. Selvaraja, Indian Institute of Science, Bengaluru, India We propose and experimentally demonstrate a coupled micro-ring cavity system. The cavity enables tunable resonance mode spacing, with mode spacing as low as 27.5 GHz is demonstrated in a footprint that is 87% less than a conventional single cavity system.
ThP22 a S-Bend Multimode Interference with Optical Delay and Power Divider for Broadband WDM Filtering, S.-H. Hsu, Y.-C. Chung, and Y.-C. Yang, National Taiwan University of Science and Technology, Taipei, Taiwan, R.O.C. A s-bend multimode interference (MMI) on 5-micron thick silicon-on-insulator experimentally demonstrated the relative optical delay and coupling power coefficient as 18.3-micron and 0.95, respectively. This s-bend MMI based Mach-Zehnder interferometer wavelength filter could illustrate process-insensitive performance on the flat top response and isolation.
ThP23 Guard-Ring Dependence of Noise Characteristics for Single-Photon avalanche Diodes in a Standard CMOS Technology, J. Rhim, Hewlett Packard Enterprise, Palo Alto, CA, USA, K. Yu, P.-H. Chang, S. Palermo, Texas A&M University, College Station, TX, USA, C. Li, M. Fiorentino, R. Beausoleil, Hewlett Packard Enterprise, Palo Alto, CA, USA, and M.-J. Lee, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland We investigate the effects of guard-ring structure on noise characteristics for CMOS-compatible single-photon avalanche diodes (SPADs). SPADs with different guard-ring structures are fabricated in standard 0.18-μm CMOS technology and the noise characteristics as dark current, dark-count rate and afterpulsing probability are measured and analyzed.
31 ThP24 Realization of Counter-Doped Silicon Modulators for Efficient Silicon Optical Interposers, V. Reboud, M. Fournier, B. Szelag, B. Blampey, P. Gindre, T. Ferrotti, O. Dubray, D. Fowler, E. Grellier, O. Lemonnier, Y. Thonnart, and S. Bernabé, Univ. Grenoble Alpes, Grenoble, France We fabricated counter-doped ring resonator modulators that guarantee the absence of unexpected p-i-n junctions in the ring waveguide due to overlay misalignments inherent to successive lithographic steps. Fabricated ring resonator modulators showed good efficiency (VπL at 1.55 V.cm at –1V) and transmission at 10 Gb.s–1.
Gala Dinner Cruise
32 FRIDay, 25 aUGUST 2017
8:00 am–8:45 am Grand Ballroom a Session Fa Plenary II Session Chair Jeremy Witzens, RWTH Aachen University
8:00 am–8:45 am (Plenary) Fa1 Physics of High-Q Microresonators: Optomechanics & Frequency Combs, T. Kippenberg, EPFL – Ecole Polytechnique de Lausanne, Switzerland
8:45 am–10:00 am Grand Ballroom a Session FB Silicon Photonics for Sensing Session Chair Andrew Poon, Hong Kong University of Science and Technology
8:45 am–9:15 am (Invited) FB1 Silicon-Based Cascaded Microring for Optical Sensing, J. He, Zhejiang University
9:15 am–9:45 am (Invited) FB2 Free-Space Coupled Silicon Photonic Crystal Refractometric Membrane Sensors, Y. Sun, Y. Liu, and W. Zhou, University of Texas at Arlington, Arlington, TX, USA We report free-space coupled single-layer and coupled bi-layer silicon photonic crystal refractive index sensing schemes. High quality factor and low detection limit sensor cavities were designed and demonstrated experimentally based on mode engineering.
9:45 am–10:00 am FB3 Ge PIN Photodetectors with Nanohole arrays for Refractive Index Sensing, L. Augul, R. Körner, S. Bechler, J. Schulze, and I. A. Fischer, University of Stuttgart, Stuttgart, Germany We present an experimental realization of an integrated biosensor consisting of a Ge PIN photodetector with an Al nanohole array in its contact metal layer. The device responsivity strongly depends on the surrounding refractive index, making the device suitable for integrated sensing at reduced size.
10:00 am–10:30 am Grand Ballroom B Exhibits / Coffee Break
33 10:30 am–12:00 pm Grand Ballroom a Session FC Towards Novel applications Session Chair Wim Bogaerts, Ghent University
10:30 am–11:00 am (Invited) FC1 Silicon Photonics for applications in Quantum Technologies, M. G. Thompson, University of Bristol Quantum photonic technologies have the potential to revolutionise our information and communication systems, enabling ultra-secure communication and advanced computation with applications in quantum simulation and machine learning. Here we overview the potential of silicon photonics to realise such a technology platform.
11:00 am–11:15 am FC2 a Monolithically Integrated Si Optical Single-Sideband Modulator, B.-M. Yu, J.-M. Lee, Yonsei University, Seoul, Korea, C. Mai, S. Lischke, L. Zimmermann, IHP, Frankfurt (Oder), Germany, and W.-Y. Choi, Yonsei University, Seoul, Korea We demonstrate a monolithically integrated Si optical single-sideband modulator that contains a ring-assisted Mach-Zehnder modulator, two MMI optical couplers, and an electrical quadrature hybrid coupler. The modulator successfully produces 30-GHz single sideband with 15 dB suppression of the undesired sideband.
11:15 am–11:30 am FC3 Integrated all-Optical Phase-Sensitive amplifier Using the Thermal Nonlinearity, T. Van Vaerenbergh, G. J. Mendoza, D. Kielpinski, J. S. Pelc, N. Tezak, R. Bose, C. Santori, and R. G. Beausoleil, Hewlett Packard Labs, Palo Alto, CA, USA We demonstrate an all-optical phase-sensitive amplifier, a critical component in integrated circuits for all-optical computing. The amplifier is fabricated in amorphous silicon-on-insulator and relies on thermo-optic self-heating in a ring-loaded Mach-Zehnder interferometer. changing the power and phase of the bias input tunes the gain.
11:30 am–12:00 pm (Invited) FC4 Laser Integration on Silicon, P. Doussiere, Intel Corporation, Santa Clara, CA, USA In this presentation we will review the progress of silicon III-V semiconductor hybrid near-infrared lasers and show that they can meet the performance and reliability required for commercial datacom transceivers at 100 Gbit/s and beyond.
12:00 pm–1:30 pm Lunch Break
34 1:30 pm–3:15 pm Grand Ballroom a Session FD Si/III-V Lasers Session Chair Heisheng Rong, INTEL
1:30 pm–1:45 pm FD1 Integration of III-V Light Sources on a Silicon Photonics Circuit by Transfer Printing, J. Juvert, Ghent University, Ghent, Belgium, T. Cassese, Scuola Superiore Sant’Anna, Pisa, Italy, S. Uvin, A. De Groote, Ghent University, Ghent, Belgium, B. Snyder, P. De Heyn, P. Verheyen, IMEC, Leuven, Belgium, A. J. Trindade, C. Bower, X-Celeprint Limited, Cork, Ireland, M. Romagnoli, Consorzio Nazionale Interuniversitario per le Telecomunicazioni (CNIT), Pisa, Italy, G. Roelkens, and D. Van Thourhout, Ghent University, Ghent, Belgium We report on the integration by transfer printing of III-V Fabry-Pérot cavities on a silicon photonic circuit. We pre-process the III-V coupons on their native substrate, transfer print onto the target SOI, and post-process the printed coupons. We report light coupling into the photonic circuit.
1:45 pm–2:15 pm (Invited) FD2 III-V Quantum Dot Lasers Grown on Si Emitting at 1.5 um, K. Lau, Hong Kong University of Science and Technology Directly grown high performance InAs/GaAs QD lasers on silicon substrates emitting at 1.3 um have been reported. We demonstrate by MOCVD the first room-temperature InAs/InAlGaAs quantum-dot microdisk lasers epitaxially grown on on-axis (001) Si, with a lasing wavelength of 1.56 um and low pump power.
2:15 pm–2:30 pm FD3 Monolithic Integration of Inalas/InGaas Quantum-Well on InP-OI Micro- Substrates on Si for Infrared Light Sources, Y. Baumgartner, B. Mayer, M. Sousa, D. Caimi, K. Moselund, and L. Czornomaz, IBM Research GmbH, Rüschlikon, Switzerland We demonstrate for the first time that InAlAs/InGaAs QW can be selectively grown on micron-sized InP-OI substrates, obtained by selective epitaxy in empty oxide cavities on Si. The concept, material and optical characterizations are presented, paving the way towards integrated light sources for infrared applications.
2:30 pm–2:45 pm FD4 Epitaxy of Direct Bandgap Group IV Heterostructure Lasers, N. von den Driesch, D. Stange, D. Rainko, Forschungszentrum Jülich GmbH, Jülich, Germany, P. Zaumseil, G. Capellini, IHP, Frankfurt (Oder), Germany, J.-M. Hartmann, Univ. Grenoble Alpes, Grenoble, France, T. Schroeder, IHP, Frankfurt (Oder), Germany, S. Mantl, D. Grützmacher, and D. Buca, Forschungszentrum Jülich GmbH, Jülich, Germany We demonstrate epitaxial growth of direct bandgap group IV GeSn/SiGeSn double heterostructures and multi quantum wells. While both designs offer high structural quality and strong light emission, multi quantum wells benefit from a smaller number of defects at the active region.
35 2:45 pm–3:15 pm (Invited) FD5 Direct Growth of III-V Quantum-Dot Lasers on Silicon, H. Liu, University College London, London, United Kingdom Direct growth of III-V lasers on Si is the most promising solution to overcome the lack of efficient light sources on Si platform. We demonstrated the first practical silicon-based telecommunications wavelength III-V lasers with low threshold current density, high output power, and long lifetime.
3:15 pm–3:45 pm Grand Ballroom B Exhibits / Coffee Break
3:45 pm–5:00 pm Grand Ballroom a Session FE Optoelectronic Devices Session Chair Kartik Srinivasan, National Institute of Standards and Technology (NIST)
3:45 pm–4:15 pm (Invited) FE1 Black Phosphorus Infrared Optoelectronics, M. Li, University of Minnesota
4:15 pm–4:30 pm FE2 Design and Performance of High-Speed Ge-on-Si Waveguide Photodiodes, N. K. Hon, S. Sahni, A. Mekis, and G. Masini, Luxtera, Inc., Carlsbad, CA, USA Three Ge-on-Si photodetector architectures with different contacting schemes are compared, with emphasis on their bandwidth. The study shows that bandwidth >50 GHz and responsivity >1 A/W at 1490 nm can be achieved using a commercial silicon photonics process.
4:30 pm–4:45 pm FE3 Operation and analysis of Low-Voltage Three-Terminal avalanche Photodiodes, Z. Huang, X. Zeng, D. Liang, M. Fiorentino, and R. G. Beausoleil, Hewlett Packard Labs, Palo Alto, CA, USA We demonstrate a three-terminal waveguide avalanche photodiode detector (3TAPD) with –6V breakdown voltage, 18.6GHz 3dB bandwidth. Design, simulation of the device is discussed.
4:45 pm–5:00 pm FE4 Electrically Tunable absorption in Graphene-Integrated Silicon Photonic Crystal Cavity, L. Abdollahi Shiramin, W. Xie, Gent University-IMEC, Ghent, Belgium, B. Snyder, P. De Heyn, P. Verheyen, IMEC, Leuven, Belgium, G. Roelkens, and D. Van Thourhout, Gent University-IMEC, Ghent, Belgium We demonstrate 17 dB extinction ratio in an electrically gated graphene-integrated silicon photonic crystal cavity by applying –1.2 V gate voltage. The shift of resonance wavelength for the same voltage range is 0.75 nm. The size of the graphene layer is only 5 µm2.
36 5:00 pm–5:30 pm Best Paper / Student Paper / Poster awards
END OF PROGRaM
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38 AUTHOR INDEX
Abdollahi Shiramin, L...... FE4 Calandrini, E...... WB1 Accard, A...... ThP2 Calvo, V...... WC2, WC4 Adelmini, L...... ThP4 Cao, W...... WB3 Ahn, J. T...... ThP4 Capellini, G...... WC3, WP4, FD4 Alattili, A...... ThA4 Carrara, D...... ThC2 Alonso-Ramos, C...... WD5, WP10, WP11, Caselli, N...... WP10 ...... ThB2, ThB3, ThD2, ThP11 Cassan, E...... WD5, WP10, WP11, Arai, S...... WD1 ...... ThB2, ThB3, ThD2, ThD3 Armand Pilon, F...... WC2, WC3, WC4 Cassese, T...... FD1 Artundo, I...... ThA1 Ceballos, A. C...... ThA5 Atsumi, Y...... ThB5 Celo, D...... WP5, ThB6 Aubin, J...... WC2 Cernansky, R...... WP6 Augul, L...... FB3 Chaibi, M. E...... ThC4 Badihi, A...... ThC3 Chang, P.-H...... ThP23 Baets, R...... ThA2 Cheben, P...... ThA4, ThB3 Baldassarre, L...... WB1, WB4, WP14 Chee, A. K. L...... ThD1 Balestrieri, M...... WP10 Chelnokov, A...... WC2, WC4 Ballabio, A...... WB1, WB2, WB4, ThD3 Chen, X...... WP2 Banakar, M...... WB3, ThA4 Chen, Y...... ThA4 Baudot, C...... ThP11 Cheng, Z...... ThB4 Baumgartner, Y...... FD3 Cherchi, M...... ThP15 Beausoleil, R...... ThP23 Chiba, Y...... ThP7 Beausoleil, R. G...... FC3, FE3 Choi, W.-Y...... FC2 Bechler, S...... FB3 Chong, H. M. H...... WP6 Benedikovic, D...... WP11, ThB2, ThB3 Christopoulos, T...... ThP18 Berciano, M...... WP11, ThB2 Chu, T...... WE1 Bernabe, S...... ThP24 Chung, Y.-C...... ThP22 Bernard, M...... WP12 Clausen, C...... WC1 Bernier, E...... WP5, ThB6 Cong, G...... WD1, WE2 Berroth, M...... ThP14 Crémer, S...... ThP11 Bertrand, M...... WC2 Cristofori, V...... ThC4 Betthenhausen, M...... WP20 Crozat, P...... WP11 Biagioni, P...... WB1, WB4, WP14 Czornomaz, L...... FD3 Biccari, F...... WP10 D’Mello, Y...... ThP9 Bienstman, P...... ThA2 Da Ros, F...... ThC4 Blampey, B...... ThP24 Damas, P...... WP11 Boeuf, F...... ThP11 Davanco, M...... ThB1 Bogaerts, W...... WD3 De Groote, A...... FD1 Bonzon, C...... WC4 De Heyn, P...... FD1, FE4 Bose, R...... FC3 Debnath, K...... WP1, ThA4 Bower, C...... FD1 Deng, Q...... ThP20 Bramerie, L...... ThC4 Deng, S...... ThP12 Brimont, A...... ThP19 Dhakal, A...... ThA2 Brulis, V...... ThP16 Ding, J...... ThP1, ThP5 Buca, D...... WC3, WC5, FD4 Ding, Y...... WP18, ThC4 Bucio, T. D...... ThA4 Doussiere, P...... FC4 Caimi, D...... FD3 Dow, L...... WD4, WE3
39 Duan, G.-H...... ThC2, ThC4, ThP2 Hakemi, N...... ThP15 Dubray, O...... ThP24 Halir, R...... ThA4 Dubreuil, N...... ThD2, ThD3 Han, G...... WP16 Dumais, P...... WP5, ThB6 Han, J...... WD2 Dumas, D. C. S...... WP7 Hao, Y...... WP16 Durán-Valdeiglesias, E...... WP10, ThB3 Harjanne, M...... ThP15 Eason, C...... ThC2 Hartmann, J. M...... WC2, WC3, WC4 Eich, M...... ThP10, ThP15 Hartmann, J.-M...... FD4 El-Fiky, E...... ThP9 Hassan, K...... ThC4 Ellerbee Bowden, A. K...... ThA5 Hatori, N...... ThC5 Faist, J...... WC4 Hattasan, N...... WB3 Fedeli, J.-M...... ThA1 Haug, M...... ThP14 Félix Rosa, M...... ThP14 He, J.-J...... ThA4, FB1 Ferrotti, T...... ThP24 He, W...... ThP3 Figliolia, I...... WP14 Hoang, T.-H.-C...... WP10 Filoramo, A...... WP10 Homm, P...... WP3 Fiorentino, M...... ThP23, FE3 Hon, N. K...... FE2 Fischer, I. A...... WC1, FB3 Hoppe, N...... ThP14 Flesch, J...... WP20 Horikawa, T...... WD2, ThP17 Fohrmann, L. S...... ThP10 Hsu, S.-H...... ThP22 Fournier, M...... ThP24 Hu, H...... WP18 Fowler, D...... ThP4, ThP24 Hu, J...... ThD2 Franz, Y...... WP2 Huang, H...... ThP2 Frigerio, J...... WB1, WB2, WB4, WP14, ThD3 Huang, Z...... FE3 Fujikata, J...... WD2 Huet, K...... WB4 Galili, M...... WP18 Hui, A. T. L...... WP18 Gallacher, K...... WB1, WB4, WP7, WP14 Ikonic, Z...... WC5 Gallet, A...... ThC2, ThC4, ThP2 Intonti, F...... WP10 Gao, J...... ThP3 Isella, G...... WB1, WB2, WB4, WP14, ThD3 Gao, X...... WP16 Itoh, K...... WD1 Gardes, F. Y...... WB3, ThA4 Jahandar, P...... WP7 Gassenq, A...... WC2, WC4 Jalas, D...... ThP15 Geiregat, P...... WP9 Jany, C...... ThC2 Geuzebroek, D...... ThA3 Jeong, S.-H...... ThC5, ThP8, ThP17 Ghorbel, I...... ThC2 Ji, P...... ThP3 Ghosh, S...... WP19 Jia, H...... ThP1, ThP6 Ghulinyan, M...... WP12 Jiang, J...... WP5, ThB6 Giliberti, V...... WB1, WB4, WP14 Juvert, J...... FD1 Gindre, P...... ThP24 Kahn, S. A...... ThA5 Goodwill, D. J...... WP5, ThB6 Kallega, R...... ThP13 Grabska, K...... WB3 Kazmierczak, M...... WP20 Green, W...... WA1 Khokhar, A. Z. ....WB3, WP1, WP2, WP6, ThA4 Grellier, E...... ThP24 Kielpinski, D...... FC3 Grillot, F...... ThP2 Kim, M.-S...... ThP4 Griol, A...... WP3, ThP19 Kinoshita, K...... WD2, ThP17 Grützmacher, D...... WC3, FD4 Kippenberg, T...... FA1 Guerber, S...... ThP11 Kita, T...... ThP7 Guha, S...... WP20 Klein, E...... ThA3 Gurioli, M...... WP10 Klesse, W. M...... WP4 Hagihara, Y...... WD2 Knights, A. P...... WD4, WE3
40 Knoll, D...... WP13 Mancinelli, M...... WP12 Koerner, R...... WC1 Mantl, S...... FD4 Kopp, C...... ThC2, ThP4 Marcaud, G...... WP11, ThB2 Körner, R...... FB3 Marin, E...... WC4 Krauss, T. F...... ThP10 Marris-Morini, D. ....WB2, WD5, WP10, WP11, Kreissl, J...... WP4 ...... ThB2, ThB3, ThD3, ThP11 Kriezis, E. E...... ThP18 Martens, D...... ThA2 Kroh, M...... WP13 Marti, J...... ThP19 Kudrawiec, R...... WP8 Martinez, E...... WC2 Kumar, A...... ThP9 Marzban, B...... WC3, WC5 Kurata, K...... WD2, ThC1, ThC5 Mashanovich, G. Z...... WB3, WP6, WP17 Kurihara, M...... WD2 Masini, G...... FE2 La China, F...... WP10 Mastronardi, L...... WB3 Labonté, L...... WD5 Mayer, B...... FD3 Lacava, C...... ThA4 Mazeas, F...... WD5 Lagae, L...... ThA1 Mazzamuto, F...... WB4 Lau, K. M...... FD2 Mekis, A...... FE2 Lawniczuk, K...... ThA3 Mendoza, G. J...... FC3 Le Roux, X...... WB2, WD5, WP10, WP11, Menghini, M...... WP3 ...... ThB2, ThB3, ThD2, ThD3, ThP11 Mentovich, E...... ThC3 Lee, J.-M...... ThP4, FC2 Mere, V...... ThP13 Lee, M.-J...... ThP23 Merget, F...... WC5, ThC3 Lemonnier, O...... ThP24 Milazzo, R...... WB4 Levaufre, G...... ThC2 Millar, R. W...... WB1, WP7, WP14 Li, A...... WD3 Milord, L...... WC2 Li, C...... ThP23 Milosevic, M. M...... WP2 Li, M...... FE1 Mitzloff, J...... WP20 Li, R...... ThP9 Mizutani, K...... ThC5 Li, T...... WB3 Mogami, T...... WD2, ThP17 Liang, D...... FE3 Molina-Fernández, I...... ThA4 Licitra, C...... WC2 Moscoso-Mártir, A...... ThC3 Lin, H...... ThD2 Moselund, K...... FD3 Lipka, T...... WP15 Myronov, M...... WP7 Lischke, S...... WP4, WP13, FC2 Nakamura, T...... WD2 Littlejohns, C. G...... WB3, WP17 Napolitani, E...... WB4 Liu, C...... WP17 Nedeljkovic, M...... WB3, WP17 Liu, G. N...... ThP12 Ng, D. K. T...... ThD1 Liu, H...... FD5 Nicoletti, S...... ThA1 Liu, L...... ThP12, ThP20 Nie, X...... ThA2 Liu, Q...... WB2 Nielsen, M...... ThC3 Liu, W...... WP5 Nien, L. W...... WP4 Liu, Y...... WP16, FB2 Nishiyama, N...... WD1 Locquet, J.-P...... WP3 Nojic, J...... ThC3 Loo, R...... WP9 O’Brien, P...... ThA1, ThC2 Maegami, Y...... WD1, WE2 Oehme, M...... WC1 Mai, A...... WP4 Ohno, M...... WD1, WE2 Mai, C...... WP3, FC2 Okano, M...... WD1, WE2 Mailis, S...... WP2 Olivier, S...... ThC2, ThC4, ThP2 Make, D...... ThC2, ThP2 Omoda, E...... ThB5 Malhouitre, S...... ThC2 Oo, S. Z...... WP6
41 Ooi, K. J. A...... ThD1 Romagnoli, M...... FD1 Ortega-Moñuz, A...... ThA4 Romero-García, S...... ThC3 Ortolani, M...... WB1, WB4, WP14 Rosa, A...... WP3, ThP19 Oser, D...... WD5, ThB3 Rothman, J...... WC2 Oton, C. J. A...... ThP4 Rouchon, D...... WC2 Oxenløwe, L. K...... ThC4 Rouifed, M.-S...... WP17 Paez, D...... WD4 Runge, A. F. J...... WP2 Paez, D. J...... WE3 Ryckeboer, E...... ThA2 Palermo, S...... ThP23 Saber, M. G...... ThP9 Pan, C...... WP19 Sahni, S...... FE2 Pandey, A...... ThP21 Saito, S...... WP1, ThA4 Pantouvaki, M...... WP9 Sakakibara, Y...... ThB5 Patel, D...... ThP9 Sakat, E...... WB1 Pauc, N...... WC2, WC4 Sanchez, L...... WP3 Paul, D. J...... WB1, WB4, WP7, WP14 Sanchis, P...... WP3, ThP19 Pavesi, L...... WP12 Sandomirsky, A...... ThC3 Peacock, A. C...... WP2 Santori, C...... FC3 Peczek, A...... WP13 Sarti, F...... WP10 Pelc, J. S...... FC3 Schäffner, J...... WP4 Pellegrini, G...... WB1, WB4 Scharoch, P...... WP8 Pérez-Galacho, D...... WD5, ThB3, ThP11 Scheck, P...... ThP14 Petermann, K...... ThP16 Schires, K...... ThP2 Petra, R...... WP6 Schmid, J. H...... ThA4 Petropoulos, P...... ThA4 Schroeder, T...... WC3, WP4, WP20, FD4 Petrov, A. Y...... ThP10, ThP15 Schulze, J...... WC1, FB3 Peucheret, C...... ThC4 Selvaraja, S. K...... ThP13, ThP21 Piehler, J...... WP20 Serna, S...... WP10, ThD2 Pitruzzello, G...... ThP10 Serna, S. F...... ThD3 Plant, D. V...... ThP9 Setter, R...... ThC3 Polak, M. P...... WP8 Shao, S...... ThP5 Polder, T...... ThP14 Sharif Azadeh, S...... WC5, ThC3 Politi, A...... WP6 Shen, A...... ThC2, ThC4 Ponce, R...... WC5 Shen, B...... ThC3 Porret, C...... WP9 Shiina, A...... ThP17 Pucker, G...... WP12 Shimura, D...... ThP17 Qiu, H...... WP17 Shimura, Y...... WP9 Qu, Z...... WB3 Sigg, H...... WC2, WC3, WC4 Rahman, B. M. A...... WP19 Signorini, S...... WP12 Rainko, D...... WC3, FD4 Sinatkas, G...... ThP18 Ramirez, J. M...... WB2, ThD3 Skandalos, I...... ThP18 Rasmussen, D. E...... ThC3 Skibitzki, O...... WP20 Rathgeber, L...... ThP14 Snyder, B...... FD1, FE4 Reboud, V...... WC2, WC4, ThP24 Sobu, Y...... ThP8, ThP17 Reed, G. T...... WB3, WP1, WP2, WP6, WP17 Soler Penades, J...... WB3, WP17 Reynolds, S...... WP6 Solgaard, O...... ThA5 Reynolds, S. A...... WB3 Sommer, G...... ThP10 Rhim, J...... ThP23 Song, M...... ThP2 Richardson, K...... ThD2 Sorgi, A...... WP14 Rockman, S...... ThC3 Sousa, M...... FD3 Roelkens, G...... ThA2, FD1, FE4 Srinivasan, K...... ThB1
42 Srinivasan, S. A...... WP9 Widiez, J...... WC4 Stange, D...... WC3, WC5, FD4 Widmann, D...... ThP14 Stankovic, S...... ThA4 Witzens, J...... WC3, WC5, ThC3 Stanković, S...... WB3 Witzigmann, B...... WP20 Sun, X...... ThB4 Wolansky, D...... WP4, WP13 Sun, Y...... ThP3, FB2 Wong, C. Y...... ThP12 Szelag, B...... ThP24 Wu, H...... WB3, ThP3 Takahashi, S...... WD2 Wu, X...... ThB4 Takenaka, M...... WD2 Xia, Y...... ThP6 Tan, D. T. H...... ThD1 Xie, W...... FE4 Tanaka, Y...... ThC5, ThP8 Xing, Z...... ThP9 Tanzilli, S...... WD5 Xu, L...... ThP9 Tarazona, A...... WP6 Xu, W...... ThP3 Tardif, S...... WC4 Yadav, A...... ThD2 Testa, F...... ThP4 Yamada, H...... ThP7 Tezak, N...... FC3 Yamada, K...... WD1, WE2 Thai, Q. M...... WC2 Yamamoto, Y...... WP4 Thompson, M. G...... FC1 Yang, L...... ThP1, ThP5, ThP6 Thomson, D. J...... WB3, WP2, WP6, WP17 Yang, Y.-C...... ThP22 Thonnart, Y...... ThP24 Yashiki, K...... WD2 Tillack, B...... WP4 Yoshida, T...... ThB5 Tina, G. X...... WP17 You, C...... WP20 Tokushima, M...... ThP17 You, C...... WP20 Trieu, H. K...... WP15 Yu, B.-M...... FC2 Trindade, A. J...... FD1 Yu, K...... ThP23 Tsang, H. K...... ThB4 Zabel, T...... WC2, WC3, WC4 Ushida, J...... ThP17 Zanzi, A...... ThP19 Uvin, S...... FD1 Zaumseil, P...... FD4 Vakarin, V...... WB2, ThB2, ThB3, ThD3 Zeng, X...... FE3 Van Bilzen, B...... WP3 Zhang, C...... WP5 Van Campenhout, J...... WP9 Zhang, J...... WP16 van Rees, A...... ThA3 Zhang, L...... ThP1, ThP5 Van Thourhout, D...... WP9, FD1, FE4 Zhang, S...... WP16 Van Vaerenbergh, T...... FC3 Zhang, W...... WD5, WP10 Verheyen, P...... FD1, FE4 Zhang, Z...... WP17 Virgilio, M...... WP4 Zheng, B...... ThB4 Vivien, L...... WB2, WD5, WP10, WP11, Zheng, L...... ThP5 ...... ThB2, ThB3, ThD2, ThD3, ThP11 Zhou, E...... ThP12 Vogel, W...... ThP14 Zhou, T...... ThP1, ThP6 Voigt, K...... WP4, ThP16 Zhou, W...... ThB4, FB2 von den Driesch, N...... WC3, FD4 Zhou, Z...... WB3, ThP20 Vulliet, N...... ThP11 Zimmermann, L...... WP3, WP4, WP13, Wang, H...... WP17 ...... ThP16, FC2 Wang, J...... ThP12 Wang, T...... ThD1, ThP12 Wang, Y...... WP16, ThP9 Wang, Z...... WD4, WE3 Wangüemert-Pérez, J. G...... ThA4 Wei, W...... ThP12 Wen, Y...... ThP12
43 NOTES
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