I Large Signal Amplifiers
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Simple Blocking Oscillator Performance Analysis for Battery Voltage Enhancement
Journal of Mobile Multimedia, Vol. 11, No.3&4 (2015) 321-329 © Rinton Press SIMPLE BLOCKING OSCILLATOR PERFORMANCE ANALYSIS FOR BATTERY VOLTAGE ENHANCEMENT DEWANTO HARJUNOWIBOWO ESMART, Physics Education Department, Sebelas Maret University, Indonesia [email protected] RESTU WIDHI HASTUTI Physics Education Department, Sebelas Maret University, Indonesia [email protected] KENNY ANINDIA RATOPO Physics Education Department, Sebelas Maret University, Indonesia [email protected] ANIF JAMALUDDIN ESMART, Physics Education Department, Sebelas Maret University, Indonesia [email protected] SYUBHAN ANNUR FKIP MIPA, Lambung Mangkurat University, Indonesia An application Blocking Oscillator (BO) on a battery to power a system LED lamp light detector has been built and compared with a standard system used phone cellular adapter as the power supply. The performance analysis was carried out to determine the efficiency of the blocking oscillator and its potency to be adopted in an electronic appliance using low voltage and current from a battery. Measurements were taken using an oscilloscope, a multimeter, and a light meter. The results show that the system generates electrical pulses of 1.5 to 7.6 VDC and powering the system normally. The system generates 3.167 mW powers to produce the intensity of 176 Lux. On the contrary, the standard system needs 1.8mW to produce 5 Lux. A LED usually takes at least 60mW to get 7150 Lux. Therefore, the system used a simple blocking oscillator seems potential to provide high voltage for powering electronic appliances with low current. Key words: blocking oscillator, characteristic, efficiency, LED, pulse 1 Introduction A design of circuit based on blocking oscillator for light up a LED using waste battery was carried out. -
CLASS 331 OSCILLATORS January 2011
CLASS 331 OSCILLATORS 331 - 1 331 OSCILLATORS 94.1 MOLECULAR OR PARTICLE RESONANT 34 .Particular frequency control TYPE (E.G., MASER) means 1 R AUTOMATIC FREQUENCY STABILIZATION 35 ..Electromechanical (e.g., motor) USING A PHASE OR FREQUENCY 36 R ..Reactance device (e.g., SENSING MEANS variable capacitors, saturable 2 .Plural oscillators controlled inductors, reactance tubes, 3 .Molecular resonance etc.) stabilization 36 C ...Capacitor controlled AFC 4 .Search sweep of oscillator 36 L ...Inductor controlled AFC 5 .Magnetron oscillator 1 A .AFC with logic elements 6 .Klystron oscillator 37 BEAT FREQUENCY 7 ..Plural controls 38 .Plural beating 8 .Transistorized controls 39 ..Single channel 9 .Oscillator with distributed 40 .Frequency or amplitude parameter-type discriminator adjustment or control 10 .Plural A.F.S. for a single 41 .Frequency stabilization oscillator 42 .With particular signal combining 11 ..Plural comparators or means (e.g., cavity mixer) discriminators 43 ..With filter in mixer output 12 ...With phase-shifted inputs circuit 13 ..Motor control of oscillator 44 WITH FREQUENCY CALIBRATION OR 14 .With intermittent comparison TESTING controls 45 POLYPHASE OUTPUT 15 .Amplitude compensation 46 PLURAL OSCILLATORS 16 .Tuning compensation 47 .Oscillator used to vary 17 .Particular error voltage control amplitude or frequency of (e.g., intergrating network) another oscillator 18 .With reference oscillator or 48 .Adjustable frequency source 49 .Selectively connected to common 19 ..Spectrum reference source output or oscillator substitution -
Sinusoidal and Non- Sinusoidal Oscillators
CHAPTER65 Learning Objectives ➣ What is an Oscillator? SINUSOIDAL ➣ Classification of Oscillators ➣ Damped and Undamped AND NON- Oscillations ➣ Oscillatory Circuit ➣ Essentials of a Feedback LC SINUSOIDAL Oscillator ➣ Tuned Base Oscillator ➣ Tuned Collector Oscillator OSCILLATORS ➣ Hartley Oscillator ➣ FET Hartley Oscillator ➣ Colpitts Oscillator ➣ Clapp Oscillator ➣ FET Colpitts Oscillator ➣ Crystal Controlled Oscillator ➣ Transistor Pierce Cystal Oscillator ➣ FET Pierce Oscillator ➣ Phase Shift Principle ➣ RC Phase Shift Oscillator ➣ Wien Bridge Oscillator ➣ Pulse Definitions ➣ Basic Requirements of a Sawtooth Generator ➣ UJT Sawtooth Generator ➣ Multivibrators (MV) ➣ Astable Multivibrator An oscillator is an electronic device used for ➣ Bistable Multivibrator (BMV) the purpose of generating a signal. Oscillators ➣ Schmitt Trigger are found in computers, wireless receivers ➣ Transistor Blocking Oscillator and transmitters, and audiofrequency equipment particularly music synthesizers 2408 Electrical Technology 65.1. What is an Oscillator ? An electronic oscillator may be defined in any one of the following four ways : 1. It is a circuit which converts dc energy into ac energy at a very high frequency; 2. It is an electronic source of alternating cur- rent or voltage having sine, square or sawtooth or pulse shapes; 3. It is a circuit which generates an ac output signal without requiring any externally ap- Oscillator plied input signal; 4. It is an unstable amplifier. These definitions exclude electromechanical alternators producing 50 Hz ac power or other devices which convert mechanical or heat energy into electric energy. 65.2. Comparison Between an Amplifier and an Oscillator As discussed in Chapter-10, an amplifier produces an output signal whose waveform is similar to the input signal but whose power level is generally high. -
P020190719536109927550.Pdf
Integrated Circuits and Systems Series Editor Anantha Chandrakasan, Massachusetts Institute of Technology Cambridge, Massachusetts For other titles published in this series, go to www.springer.com/series/7236 Eric Vittoz Low-Power Crystal and MEMS Oscillators The Experience of Watch Developments Eric Vittoz Ecole Polytechnique Fédérale de Lausanne (EPFL) 1015 Lausanne Switzerland [email protected] ISSN 1558-9412 ISBN 978-90-481-9394-3 e-ISBN 978-90-481-9395-0 DOI 10.1007/978-90-481-9395-0 Springer Dordrecht Heidelberg London New York Library of Congress Control Number: 2010930852 © Springer Science+Business Media B.V. 2010 No part of this work may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, microfilming, recording or otherwise, without written permission from the Publisher, with the exception of any material supplied specifically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. Cover design: Spi Publisher Services Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) To my wife Monique Contents Preface ...................................................... xi Symbols ..................................................... xiii 1 Introduction ............................................. 1 1.1 Applications of Quartz Crystal Oscillators. ................ 1 1.2 HistoricalNotes ...................................... 2 1.3 TheBookStructure................................... -
Simple Blocking Oscillator for Waste Battery's Voltage Enhancement
International Journal of Information and Electronics Engineering, Vol. 6, No. 2, March 2016 Simple Blocking Oscillator for Waste Battery’s Voltage Enhancement Dewanto Harjunowibowo, Wiwit Widiawati, Anif Jamaluddin, and Furqon Idris zero. Since VBB<<VCC and does not affect the operation of Abstract—A system based on Blocking Oscillator (BO) has circuit therefore it can be neglected. been built and potentially produces high gain pulses voltage. This paper aims to discuss characteristic, work principle, and its potency of simple blocking oscillator to optimize batteries usage. The measurement of its peak to peak voltage (Vpp) and root means square voltage (Vrms) were conducted using digital oscilloscope and digital voltmeter. The experiment proves that the system produces high gain pulse electricity and driven LED without broke it out. The system could power a white LED 3.0-4.0 V using an input voltage of 0.98 VDC from waste battery. Using blocking oscillator, a battery may be used longer and more efficient until the battery energy almost ramps out to 0.5V. Index Terms—Blocking oscillator, characteristic, gain, led. Fig. 1. A triggered transistor blocking oscillator with base timing. Suppose a triggering signal is momentarily applied to the I. INTRODUCTION collector to lower its voltage. By transformer action, the base In order to increase battery life, some experiments has been will rise in potential. After VBE exceeds the cut in voltage, done, such as to design circuit building blocks with lower the transistor saturates and starts to draw current. The increase supply voltage and consuming sub-microwatt power. in collector current lowers the collector voltage, which in turn Reference [1] has built a circuit design which generates a DC raises the base voltage. -
Parasitic Oscillation (Power MOSFET Paralleling)
MOSFET Parallening (Parasitic Oscillation between Parallel Power MOSFETs) Description This document explains structures and characteristics of power MOSFETs. © 2017 - 2018 1 2018-07-26 Toshiba Electronic Devices & Storage Corporation Table of Contents Description ............................................................................................................................................ 1 Table of Contents ................................................................................................................................. 2 1. Parallel operation of MOSFETs ........................................................................................................... 3 2. Current imbalance caused by a mismatch in device characteristics (parallel operation) ..................... 3 2.1. Current imbalance in steady-state operation ......................................................................................... 3 2.2. Current imbalance during switching transitions ............................................................................. 3 3. Parasitic oscillation (parallel operation) ............................................................................................... 4 3.1. Gate voltage oscillation caused by drain-source voltage oscillation ........................................... 4 3.2. Parasitic oscillation of parallel MOSFETs .......................................................................................... 5 3.2.1. Preventing parasitic oscillation of parallel MOSFETs .............................................................................. -
Parasitic Oscillation and Ringing of Power Mosfets Application Note
Parasitic Oscillation and Ringing of Power MOSFETs Application Note Parasitic Oscillation and Ringing of Power MOSFETs Description This document describes the causes of and solutions for parasitic oscillation and ringing of power MOSFETs. © 2017 - 2018 1 2018-07-26 Toshiba Electronic Devices & Storage Corporation Parasitic Oscillation and Ringing of Power MOSFETs Application Note Table of Contents Description ............................................................................................................................................ 1 Table of Contents ................................................................................................................................. 2 1. Parasitic oscillation and ringing of a standalone MOSFET .......................................................... 3 2. Forming of an oscillation network ....................................................................................................... 3 2.1. Oscillation phenomenon ..................................................................................................................... 3 2.1.1. Feedback circuit (positive and negative feedback) ......................................................................... 4 2.1.2. Conditions for oscillation ...................................................................................................................... 5 2.2. MOSFET oscillation .............................................................................................................................. 5 2.2.1. -
Self-Oscillation
Self-oscillation Alejandro Jenkins∗ High Energy Physics, 505 Keen Building, Florida State University, Tallahassee, FL 32306-4350, USA Physicists are very familiar with forced and parametric resonance, but usually not with self- oscillation, a property of certain dynamical systems that gives rise to a great variety of vibrations, both useful and destructive. In a self-oscillator, the driving force is controlled by the oscillation itself so that it acts in phase with the velocity, causing a negative damping that feeds energy into the vi- bration: no external rate needs to be adjusted to the resonant frequency. The famous collapse of the Tacoma Narrows bridge in 1940, often attributed by introductory physics texts to forced resonance, was actually a self-oscillation, as was the swaying of the London Millennium Footbridge in 2000. Clocks are self-oscillators, as are bowed and wind musical instruments. The heart is a \relaxation oscillator," i.e., a non-sinusoidal self-oscillator whose period is determined by sudden, nonlinear switching at thresholds. We review the general criterion that determines whether a linear system can self-oscillate. We then describe the limiting cycles of the simplest nonlinear self-oscillators, as well as the ability of two or more coupled self-oscillators to become spontaneously synchronized (\entrained"). We characterize the operation of motors as self-oscillation and prove a theorem about their limit efficiency, of which Carnot's theorem for heat engines appears as a special case. We briefly discuss how self-oscillation applies to servomechanisms, Cepheid variable stars, lasers, and the macroeconomic business cycle, among other applications. Our emphasis throughout is on the energetics of self-oscillation, often neglected by the literature on nonlinear dynamical systems. -
Generation of Broad-Band Chaos Using Blocking Oscillator Nikolai F
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: FUNDAMENTAL THEORY APPLICATIONS, VOL. 48, NO. 6, JUNE 2001 673 Generation of Broad-Band Chaos Using Blocking Oscillator Nikolai F. Rulkov and Alexander R. Volkovskii Abstract—In this paper, we discuss fundamentals for the design of a source of chaotic signals based on a blocking oscillator circuit. We study a modification of a well-known circuit of blocking os- cillator which leads to the onset of chaotic oscillations. The output signal of such chaotic oscillator is a series of short term pulses char- acterized by chaotic fluctuations of time intervals between pulses. Such chaotic pulse signals posses a broad-band continuous power spectrum and short correlation length. We discuss the results of theoretical and experimental studies of nonlinear dynamics of the chaotic blocking oscillator. Index Terms—Bifurcations, chaos, nonlinear circuits. I. INTRODUCTION NTENSIVE studies of possible applications of chaotic sig- I nals are supported in part by the abilities of simple inex- pensive electrical circuits to generate complex chaotic signals. Quite a few simple autonomous nonlinear circuits that posses chaotic dynamics have been proposed and studied, see for ex- Fig. 1. Chaotic blocking oscillator circuit. ample [1]–[6]. Most of these nonlinear circuits produce chaotic signals in form of quasiharmonic oscillations. Chaos in such cir- stead of quasiharmonic chaotic signals are discussed in details cuits occurs through bifurcations from a regime of harmonic os- in [10], [12], [13]. cillation. The shape of the power spectrum of such chaotic sig- The core of the chaotic pulse oscillators is a circuit that gener- nals depends upon the amplitudes of higher harmonics which ates time intervals in accordance with the iterations of a chaotic occur due to nonlinear distortions of the original harmonic os- map. -
Preventing Gan Device VHF Oscillation APEC 2017
Preventing GaN Device VHF Oscillation APEC 2017 Zan Huang, Jason Cuadra APEC 2017 | 1 Parasitic oscillation • Parasitic oscillation can occur in any switching circuit with fast- changing voltage and current that stimulate a parasitic LC network • The oscillation becomes sustained when positive feedback with gain is present • The feedback could be through parasitic capacitance, parasitic inductance, shared or coupling inductance, etc. • Together with the device gain in the linear region, creates an oscillator • Preventing oscillation in fast-switching GaN devices is more challenging than in silicon due to • Faster dv/dt and di/dt • Higher transconductance • Violent sustained VHF oscillation (50-200MHz) will cause destruction APEC 2017 | 2 Sustained oscillation • In a half-bridge circuit with high speed devices on both the high and low side, there are three steps that yield sustained oscillation on the high-side device during low-side device turn-on, and vice versa Note: Sustained oscillation can occur even in a single-ended circuit, with very fast switching, e.g. a boost converter using a FET+diode; the analysis is similar to a half-bridge APEC 2017 | 3 Step 1: VGS change due to high dv/dt • During low-side turn-on, the high-side FET is subjected to a large positive dv/dt, which couples through CGD to increase VGS, (“Miller effect”) reducing its off-voltage margin against gate threshold VTH • To counter this, Transphorm devices are designed with a low ratio of CGD to CGS to minimize the Miller effect APEC 2017 | 4 Step 2: VGS change due -
Principles of Transistor Circuits
Principles of Transistor Circuits Ninth Edition Introduction to the Design of Amplifiers, Receivers and Digital Circuits S. W. Amos, BSc, CEng, MIEE M. R. James, BSc, CEng, MIEE Newnes OXFORD AUCKLAND BOSTON JOHANNESBURG MELBOURNE NEW DELHI Newnes An imprint of Newnes Butterworth-Heinemann Linacre House, Jordan Hill, Oxford OX2 8DP 225 Wildwood Avenue, Woburn, MA 01801-2041 A division of Reed Educational and Professional Publishing Ltd A member of the Reed Elsevier plc group First published by Iliffe Books Ltd 1959 Second edition 1961 Third edition 1965 Fourth edition 1969 Fifth edition 1975 Sixth edition 1981 Seventh edition 1990 Eighth edition 1994 Ninth edition 2000 © S. W. Amos and M. R. James 2000 All rights reserved. No part of this publication may be reproduced in any material form (including photocopying or storing in any medium by electronic means and whether or not transiently or incidentally to some other use of this publication) without the written permission of the copyright holder except in accordance with the provisions of the Copyright, Designs and Patents Act 1988 or under the terms of a licence issued by the Copyright Licensing Agency Ltd, 90 Tottenham Court Road, London, England W1P 9HE. Applications for the copyright holder’s written permission to reproduce any part of this publication should be addressed to the publishers British Library Cataloguing in Publication Data Amos, S. W. Principles of transistor circuits. – 9th ed. 1. Transistor circuits 2. Electronic circuit design I. Title 621.3815Ј30422 TK7871.9 ISBN 0 7506 4427 3 Library of Congress Cataloguing in Publication Data Amos, S. W. -
Circuit Design for RF Transceivers Text.Pdf
Circuit Design for RF Transceivers Domine Leenaerts, Johan van der Tang and Cicero Vaucher Kluwer Academic Publishers CIRCUIT DESIGN FOR RF TRANSCEIVERS CIRCUIT DESIGN FOR RF TRANSCEIVERS By Domine Leenaerts Philips Research Laboratories Eindhoven Johan van derTang Eindhoven University of Technology and Cicero S. Vaucher Philips Research Laboratories Eindhoven KLUWER ACADEMIC PUBLISHERS BOSTON / DORDRECHT / LONDON EELCl|tTj A C.I.P. Catalogue record for this book is available from the Library of Congress. ISBN 0-7923-7551-3 Published by Kluwer Academic Publishers, P.O. Box 1 7, 3300 AA Dordrecht, The Netherlands. Sold and distributed in North, Central and South America by Kluwer Academic Publishers, 101 Philip Drive, Nonwell, MA 02061, U.S.A. In all other countries, sold and distributed by Kluwer Academic Publishers, P.O. Box 322, 3300 AH Dordrecht, The Netherlands. Printed on acid-free paper All Rights Reserved © 2001 Kluwer Academic Publishers, Boston No part of the material protected by this copyright notice may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying, recording or by any information storage and retrieval system, without written permission from the copyright owner. Printed in the Netherlands. To Lisanne, Nienke, and Viviane Contents Preface xiii 1 1 . RF DESIGN: CONCEPTS AND TECHNOLOGY 1 1 . 1 RF Specifications 1.1.1 Gain 2 1.1.2 Noise 6 1.1.3 Non-linearity 10 1.1.4 Sensitivity 14 1.2 RF Device Technology 14 1.2.1 Characterization and Modeling 15 Modeling 15 Cut-off Frequency 17 Maximum Oscillation Frequency 20 Input Limited Frequency 21 Output Limited Frequency 22 Maximum Available Bandwidth 23 1.2.2 Technology Choice 23 Double Poly Devices 24 Silicon-on-Anything 26 Comparison 28 SiGe Bipolar Technology 30 RF CMOS 30 1.3 Passives 33 1.3.1 Resistors 34 1.3.2 Capacitors 35 1.3.3 Planar Monolithic Inductors 37 References 42 2.