Arxiv:1602.01655V2 [Cond-Mat.Mes-Hall] 25 Apr 2016 Which Is Often Smaller Than 1

(Pat. pending, to appear in Comptes Rendus) . Linear and Nonlinear Mesoscopic Thermoelectric Transport with Coupling to Heat Baths Jian-Hua Jiang1, ∗ and Yoseph Imry2, y 1School of Physical Science and Technology, Soochow University, 1 Shizi Street, Suzhou, Jiangsu, China 2Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel (Dated: September 25, 2018) Decades of research on thermoelectrics stimulated by the fact that nano- and meso-scale thermoelectric transport could yield higher energy conversion efficiency and output power has recently uncovered a new direction on inelastic thermoelectric effects. We introduce the history, motivation, and perspectives on mesoscopic inelastic thermoelectric effects. I. INTRODUCTION found lately to be less effective as, for example, the output power is suppressed in the zero band width limit[3] Research on the science and technology of thermo- due to, e,g., suppressed electrical conductivity[4]. electric phenomenon has a long history since its dis- Alongside with those developments, the scientific com- covery almost two centuries ago[1]. The modern the- munity was pursuing a better understanding of (charge) ory for thermoelectric transport in bulk semiconductors transport in nano- and meso-scale systems, localization was established, with the help of energy band theory and phenomena, and strongly interacting electron systems. semi-classical transport theory, in the middle of the last These studies activated research on thermoelectric trans- century[1]. The key concepts such as the figure of merit port in non-standard (including bulk) semiconductors, and the power factor were introduced then, which facili- which is still ongoing[5]. The most influential studies are tated and stimulated many theoretical and experimental based on two seminal works by Hicks and Dresselhaus[6], studies. It was found that the figure of merit (a measure who found that in reduced-dimension semiconductors, of the optimal thermoelectric efficiency in a material), such as quantum wells (2D), quantum wires (1D) and quantum dots (0D) heterostructures, the interrelation σS2T between the electrical conductivity, the Seebeck coeffi- ZT = (1) κ cient, and the thermal conductivity can be partially de- coupled. This is mainly because the density of states is limited by the following interrelated transport quanti- can be effectively enhanced and modulated (at differ- ties: the electrical conductivity σ, the Seebeck coefficient ent energies) when the spatial confinement along any di- S, and the thermal conductivity κ. The latter has contri- rection is small enough to induce significant quantum- butions from the electronic transport κe and other mech- confinement effects. Opportunities for enhancing the anisms (mainly from phonons in semiconducting materi- thermoelectric figure of merit ZT and the power fac- 2 als, κp), i.e., κ = κe + κp. Increasing S usually leads to tor S σ by engineering nanostructures and nanomate- reduced electrical conductivity σ. In addition, σ and κe rials thus emerge[7{11]. In addition, when low dimen- are interrelated. In metals, these two quantities mostly sional structures are packed up (densely) to macroscopic follow the Wiedemann-Franz law structures, the abundant interfaces effectively reduce the phonon heat conductivity[7, 8]. If the phonon heat con- κ = LT σ; (2) ductvity is reduced more significantly (e.g., by introduc- ing effective phonon scattering centers, or packing mate- 2 where L ≡ aL(kB=e) is the Lorenz number (aL ∼ 1, de- rials with mismatched phonon impedance) then the elec- pending on the material and the temperature). In semi- trical conductivity, the thermoelectric figure of merit can conductors, similar relations are usually approximately be improved[9]. This was demonstrated in BiTe quantum confirmed. When the Wiedeman-Franz law holds, the well superlattices and PbTe quantum dot superlattices[8]. 2 2 2 thermoelectric figure of merit is approximately S e =kB, In the latter a high density of quantum dots forming a arXiv:1602.01655v2 [cond-mat.mes-hall] 25 Apr 2016 which is often smaller than 1. regular array induces a large electronic density of states Mahan and Sofo proposed to improve the figure of in the PbSeTe alloy layer. Other methods, such as en- merit by using conductors with very narrow energy ergy filtering and semimetal-semiconductor transition, in bands, so that the thermal conductivity κe is reduced engineering the electronic density of states and the en- from the Wiedemann-Franz law[2]. However, this was ergy dependent conductivity are also introduced[10, 11]. The underlying physics is manifested in the Mott-Cutler formula[12, 13] ∗Electronic address: [email protected] hE − µi Var(E − µ) y S = ; κ = σ (3) Electronic address: [email protected] eT e2T 2 where Var(E−µ) = h(E−µ)2i−h(E−µ)i2 is the variance II. BOUNDS AND QUANTIZED VALUES OF of the transport electronic energy; and the averages of THERMAL-ELECTRIC TRANSPORT powers of the electronic energy are defined as COEFFICIENTS (THIS SECTION IS DEDICATED TO JACOB BEKENSTEIN, A 1 Z HIGHLY ESTEEMED COLLEAGUE, SOME OF h(E − µ)ni = dEσ(E)(E − µ)n[−@ f (E)]; WHOSE EARLY WORK IS REVIEWED HERE) σ E F n = 1; 2; (4a) In this section, we discuss bounds (upper limits) on Z electric, thermal and thermoelectric transport coeffi- σ = dEσ(E)[−@ f (E)]: (4b) E F cients. For the first two, these bounds can be reached in ideal conducting channels and give rise to \quantized" Here σ(E) is the energy dependent conductivity and values of these coefficients. E−µ It makes physical sense that maximal values of currents fF (E) = 1=[exp( ) + 1] is the Fermi distribution kB T function. The energy dependence of the conductivity carried in a pipe are proportional to the cross sectional σ(E) is the key quantity for engineering the thermoelec- area of that pipe. The same is valid for the transport of tric transport properties. It can be written as σ(E) = charge, energy and heat through a conducting wire. This is of interest by itself and because, as found by Whitney ekBT ρ(E)b(E) where ρ(E) is the density of states (DOS) and b(E) is the energy-dependent mobility. [14] these bounds also give the scales on which the maximal efficiency is reduced from Carnot. Nanostructures and nanocomposites have been demon- We start with the simplest case of charge transport, strated as effective ways to tune the carrier density of which is not the first example to have been discussed [18], states and the energy dependence of carrier scattering, as but the easiest to understand [19]. Consider a 1D wire well as to reduce the phonon thermal conductivity. These carrying electrical current, at a temperature T E methods lead to high thermoelectric efficiency and power F with EF being the Fermi energy. We imagine, following density for applications. Nevertheless, several nontrivial Landauer[20], that the strictly 1D wire (so narrow that aspects of mesoscopic electron transport have not been the lowest transverse excitation energy is larger than E exploited, which might give a chance to further enhance F plus several kBT , so only one transverse state is relevant) thermoelectric efficiency and power. These are: (1) non- connecting two reservoirs each at equilibrium, but with linear effects, (2) inelastic effects (due to strong carrier- slightly different electrochemical potentials µL and µR carrier interaction and carrier-phonon interaction), (3) and, at this stage, identical temperatures, T . The current thermoelectric transport with spatially separated electri- flowing between L and R is: cal and thermal currents. The main purpose of this re- view is to emphasize those aspects and their potential val- Z ues for improving thermoelectric performance, as well as I = e dE(fL − fR)v(E)ρ(E); (5) realization of thermoelectric diodes and transistors. We mainly focus on the inelastic effects and show that they v(E) and ρ(E) being the velocity and the density of states can offer an alternative (new) route toward high perfor- at energy E. fL and fR are the Fermi functions of L and mance thermoelectric structures that may reduce the ne- R. Since the 1D single-particle DOS, spin included, is cessity for novel functional materials. We further discuss given by nonlinear effects and the spatial separation of heat and 1 electrical currents in thermoelectric transport through in- ρ(E) = ; (6) elastic thermoelectric transport. We will illustrate how π~v(E) these aspects may lead to better thermoelectrics. Several the velocity factors cancel. For linear response fL −fR = example systems are used to demonstrate the principles. 0 0 −eV f with f ≡ @Ef (f is the equilibrium Fermi distri- In the next section we consider bounds (which, when 2 bution), the integral trivially gives I = e V . Therefore, reached, are sometimes referred to as \quantized values") π~ the conductance is given by of thermoelectric response coefficients. These bounds de- termine sometimes [14] the scales over which the maxi- e2 mal efficiency is reduced from Carnot. In section III, G = I=V = (7) π we consider linear and nonlinear transport above a bar- ~ rier. The latter is crossed by thermal activation, the This inconspicuous result is amazingly deep! The con- energy for which is taken from the (usually phonons, or ductance of an ideal 1D (\single channel") wire is uni- the other electrons) associated heat baths. In section IV versal and totally independent on material and proper- we discuss a simple, quite generic, model [15, 16] for in- ties of the wire! No single-channel wire can have a larger elastic transport using a heat bath. Synergistic heat and conductance than an ideal one. So, this value is both electrical rectification and transistor effects in systems an upper limit and a so called \quantized value" of this with pronounced inelastic thermoelectric transport[17] is conductance.

Load more