DOCSLIB.ORG

Alphabetical Index of Substances and Articles

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Alphabetical Index of Substances and Articles ALPHABETICAL INDEX OF SUBSTANCES AND ARTICLES - 363 - NOTES TO THE INDEX 1. This index is an alphabetical list of the substances and articles which are listed in numerical order in the Dangerous Goods List in Chapter 3.2. 2. For the purpose of determining the alphabetical order the following information has been ignored even when it forms part of the proper shipping name: numbers; Greek letters; the abbreviations “sec” and “tert”; and the letters “N” (nitrogen), “n” (normal), “o” (ortho) “m” (meta), “p” (para) and “N.O.S.” (not otherwise specified). 3. The name of a substance or article in block capital letters indicates a proper shipping name. 4. The name of a substance or article in block capital letters followed by the word “see” indicates an alternative proper shipping name or part of a proper shipping name (except for PCBs). 5. An entry in lower case letters followed by the word “see” indicates that the entry is not a proper shipping name; it is a synonym. 6. Where an entry is partly in block capital letters and partly in lower case letters, the latter part is considered not to be part of the proper shipping name. 7. A proper shipping name may be used in the singular or plural, as appropriate, for the purposes of documentation and package marking. - 365 - INDEX Name and description Class UN No. Name and description Class UN No. Accumulators, electric, see 4.3 3292 Acid mixture, nitrating acid, see 8 1796 8 2794 8 2795 Acid mixture, spent, nitrating acid, see 8 1826 8 2800 8 3028 Acraldehyde, inhibited, see 6.1 1092 ACETAL 3 1088 ACRIDINE 6.1 2713 ACETALDEHYDE 3 1089 ACROLEIN DIMER, STABILIZED 3 2607 ACETALDEHYDE AMMONIA 9 1841 ACROLEIN, STABILIZED 6.1 1092 ACETALDEHYDE OXIME 3 2332 ACRYLAMIDE, SOLID 6.1 2074 ACETIC ACID, GLACIAL 8 2789 ACRYLAMIDE SOLUTION 6.1 3426 ACETIC ACID SOLUTION, more than 8 2790 ACRYLIC ACID, STABILIZED 8 2218 10% but not more than 80% acid, by mass ACRYLONITRILE, STABILIZED 3 1093 ACETIC ACID SOLUTION, more than 8 2789 Actinolite, see 9 2590 80% acid, by mass Activated carbon, see 4.2 1362 ACETIC ANHYDRIDE 8 1715 Activated charcoal, see 4.2 1362 Acetoin, see 3 2621 ADHESIVES containing flammable 3 1133 ACETONE 3 1090 liquid ACETONE CYANOHYDRIN, 6.1 1541 ADIPONITRILE 6.1 2205 STABILIZED Aeroplane flares, see 1.1G 0420 ACETONE OILS 3 1091 1.2G 0421 1.3G 0093 ACETONITRILE 3 1648 1.4G 0403 1.4S 0404 ACETYL BROMIDE 8 1716 AEROSOLS 2 1950 ACETYL CHLORIDE 3 1717 AGENT, BLASTING, TYPE B, see 1.5D 0331 ACETYLENE, DISSOLVED 2.1 1001 AGENT, BLASTING, TYPE E, see 1.5D 0332 ACETYLENE, SOLVENT FREE 2.1 3374 AIR BAG INFLATORS 1.4G 0503 Acetylene tetrabromide, see 6.1 2504 9 3268 Acetylene tetrachloride, see 6.1 1702 AIR BAG MODULES 1.4G 0503 9 3268 ACETYL IODIDE 8 1898 AIR, COMPRESSED 2.2 1002 ACETYL METHYL CARBINOL 3 2621 Aircraft evacuation slides, see 9 2990 Acid butyl phosphate, see 8 1718 AIRCRAFT HYDRAULIC POWER 3 3165 Acid mixture, hydrofluoric and 8 1786 UNIT FUEL TANK (containing a sulphuric, see mixture of anhydrous hydrazine and methylhydrazine) (M86 fuel) - 366 - Name and description Class UN No. Name and description Class UN No. Aircraft survival kits, see 9 2990 ALKALINE EARTH METAL 4.3 1392 AMALGAM, LIQUID AIR, REFRIGERATED LIQUID 2.2 1003 ALKALINE EARTH METAL 4.3 3402 ALCOHOLATES SOLUTION, N.O.S., 3 3274 AMALGAM, SOLID in alcohol ALKALINE EARTH METAL 4.3 1391 Alcohol, denatured, see 3 1986 DISPERSION 1987 ALKALINE EARTH METAL 4.3 3482 Alcohol, industrial, see 3 1986 DISPERSION, FLAMMABLE 1987 ALKALOID SALTS, LIQUID, N.O.S. 6.1 3140 ALCOHOLS, N.O.S. 3 1987 ALKALOID SALTS, SOLID, N.O.S. 6.1 1544 ALCOHOLS, FLAMMABLE, TOXIC, 3 1986 ALKALOIDS, LIQUID, N.O.S. 6.1 3140 N.O.S. ALKALOIDS, SOLID, N.O.S. 6.1 1544 ALCOHOLIC BEVERAGES, with 3 3065 more than 70% alcohol by volume Alkyl aluminium halides, see 4.2 3393 3394 ALCOHOLIC BEVERAGES, with 3 3065 more than 24% but not more than 70% ALKYLPHENOLS, LIQUID, N.O.S. 8 3145 alcohol by volume (including C2-C12 homologues) Aldehyde, see 3 1989 ALKYLPHENOLS, SOLID, N.O.S. 8 2430 (including C2-C12 homologues) ALDEHYDES, N.O.S. 3 1989 ALKYLSULPHONIC ACIDS, LIQUID 8 2584 ALDEHYDES, FLAMMABLE, 3 1988 with more than 5% free sulphuric acid TOXIC, N.O.S. ALKYLSULPHONIC ACIDS, LIQUID 8 2586 ALDOL 6.1 2839 with not more than 5% free sulphuric acid ALKALI METAL ALCOHOLATES, 4.2 3206 SELF-HEATING, CORROSIVE, ALKYLSULPHONIC ACIDS, SOLID 8 2583 N.O.S. with more than 5% free sulphuric acid ALKALI METAL ALLOY, LIQUID, 4.3 1421 ALKYLSULPHONIC ACIDS, SOLID 8 2585 N.O.S. with not more than 5% free sulphuric acid ALKALI METAL AMALGAM, LIQUID 4.3 1389 ALKYLSULPHURIC ACIDS 8 2571 ALKALI METAL AMALGAM, SOLID 4.3 3401 Allene, see 2.1 2200 ALKALI METAL AMIDES 4.3 1390 ALLYL ACETATE 3 2333 ALKALI METAL DISPERSION 4.3 1391 ALLYL ALCOHOL 6.1 1098 ALKALI METAL DISPERSION, 4.3 3482 FLAMMABLE ALLYLAMINE 6.1 2334 Alkaline corrosive battery fluid, see 8 2797 ALLYL BROMIDE 3 1099 ALKALINE EARTH METAL 4.2 3205 ALLYL CHLORIDE 3 1100 ALCOHOLATES, N.O.S. Allyl chlorocarbonate, see 6.1 1722 ALKALINE EARTH METAL ALLOY, 4.3 1393 N.O.S. ALLYL CHLOROFORMATE 6.1 1722 - 367 - Name and description Class UN No. Name and description Class UN No. ALUMINIUM REMELTING 4.3 3170 ALLYL ETHYL ETHER 3 2335 BY-PRODUCTS ALLYL FORMATE 3 2336 ALUMINIUM RESINATE 4.1 2715 ALLYL GLYCIDYL ETHER 3 2219 ALUMINIUM SILICON POWDER, 4.3 1398 UNCOATED ALLYL IODIDE 3 1723 ALUMINIUM SMELTING 4.3 3170 ALLYL ISOTHIOCYANATE, 6.1 1545 BY-PRODUCTS STABILIZED Amatols, see 1.1D 0082 ALLYLTRICHLOROSILANE, 8 1724 STABILIZED AMINES, FLAMMABLE, 3 2733 CORROSIVE, N.O.S. Aluminium alkyl halides, liquid, see 4.2 3394 AMINES, LIQUID, CORROSIVE, 8 2735 Aluminium alkyl halides, solid, see 4.2 3393 N.O.S. Aluminium alkyl hydrides, see 4.2 3394 AMINES, LIQUID, CORROSIVE, 8 2734 FLAMMABLE, N.O.S. Aluminium alkyls, see 4.2 3394 AMINES, SOLID, CORROSIVE, 8 3259 ALUMINIUM BOROHYDRIDE 4.2 2870 N.O.S. ALUMINIUM BOROHYDRIDE IN 4.2 2870 Aminobenzene, see 6.1 1547 DEVICES 2-Aminobenzotrifluoruride, see 6.1 2942 ALUMINIUM BROMIDE, 8 1725 ANHYDROUS 3-Aminobenzotrifluoruride, see 6.1 2948 ALUMINIUM BROMIDE SOLUTION 8 2580 Aminobutane, see 3 1125 ALUMINIUM CARBIDE 4.3 1394 2-AMINO-4-CHLOROPHENOL 6.1 2673 ALUMINIUM CHLORIDE, 8 1726 2-AMINO-5-DIETHYL- 6.1 2946 ANHYDROUS AMINOPENTANE ALUMINIUM CHLORIDE 8 2581 2-AMINO-4,6-DINITROPHENOL, 4.1 3317 SOLUTION WETTED with not less than 20% water, by mass Aluminium dross, see 4.3 3170 2-(2-AMINOETHOXY)ETHANOL 8 3055 ALUMINIUM FERROSILICON 4.3 1395 POWDER N-AMINOETHYLPIPERAZINE 8 2815 ALUMINIUM HYDRIDE 4.3 2463 1-Amino-2-nitrobenzene, see 6.1 1661 ALUMINIUM NITRATE 5.1 1438 1-Amino-3-nitrobenzene, see 6.1 1661 ALUMINIUM PHOSPHIDE 4.3 1397 1-Amino-4-nitrobenzene, see 6.1 1661 ALUMINIUM PHOSPHIDE 6.1 3048 AMINOPHENOLS (o-, m-, p-) 6.1 2512 PESTICIDE AMINOPYRIDINES (o-, m-, p-) 6.1 2671 ALUMINIUM POWDER, COATED 4.1 1309 AMMONIA, ANHYDROUS 2.3 1005 ALUMINIUM POWDER, UNCOATED 4.3 1396 - 368 - Name and description Class UN No. Name and description Class UN No. AMMONIA SOLUTION relative 8 2672 AMMONIUM NITRATE EMULSION, 5.1 3375 density between 0.880 and 0.957 at intermediate for blasting explosives 15 °C in water, with more than 10% but not more than 35% ammonia Ammonium nitrate explosive, see 1.1D 0082 1.5D 0331 AMMONIA SOLUTION, relative 2.2 2073 density less than 0.880 at 15 °C in AMMONIUM NITRATE GEL, 5.1 3375 water, with more than 35% but not intermediate for blasting explosives more than 50% ammonia AMMONIUM NITRATE, LIQUID 5.1 2426 AMMONIA SOLUTION, relative 2.3 3318 (hot concentrated solution) density less than 0.880 at 15 °C in water, with more than 50% ammonia AMMONIUM NITRATE 5.1 3375 SUSPENSION, intermediate for AMMONIUM ARSENATE 6.1 1546 blasting explosives Ammonium bichromate, see 5.1 1439 AMMONIUM NITRATE with more 1.1D 0222 than 0.2% combustible substances, Ammonium bifluoride solid, see 8 1727 including any organic substance calculated as carbon, to the exclusion Ammonium bifluoride solution, see 8 2817 of any other added substance Ammonium bisulphate, see 8 2506 AMMONIUM NITRATE, with not 5.1 1942 more than 0.2% total combustible Ammonium bisulphite solution, see 8 2693 material, including any organic substance, calculated as carbon to the AMMONIUM DICHROMATE 5.1 1439 exclusion of any other added substance AMMONIUM DINITRO-o- 6.1 1843 AMMONIUM PERCHLORATE 1.1D 0402 CRESOLATE, SOLID 5.1 1442 AMMONIUM DINITRO-o- 6.1 3424 Ammonium permanganate, see 5.1 1482 CRESOLATE, SOLUTION AMMONIUM PERSULPHATE 5.1 1444 AMMONIUM FLUORIDE 6.1 2505 AMMONIUM PICRATE dry or wetted 1.1D 0004 AMMONIUM FLUOROSILICATE 6.1 2854 with less than 10% water, by mass Ammonium hexafluorosilicate, see 6.1 2854 AMMONIUM PICRATE, WETTED 4.1 1310 with not less than 10% water, by mass AMMONIUM HYDROGEN- 8 1727 DIFLUORIDE, SOLID AMMONIUM POLYSULPHIDE 8 2818 SOLUTION AMMONIUM HYDROGEN- 8 2817 DIFLUORIDE SOLUTION AMMONIUM POLYVANADATE 6.1 2861 AMMONIUM HYDROGEN 8 2506 Ammonium silicofluoride, see 6.1 2854 SULPHATE AMMONIUM SULPHIDE SOLUTION 8 2683 Ammonium hydrosulphide solution 8 2683 (treat as ammonium sulphide solution), Ammunition, blank, see 1.1C 0326 see 1.2C 0413 1.3C 0327 AMMONIUM METAVANADATE 6.1 2859 1.4C 0338 1.4S 0014 AMMONIUM NITRATE BASED 5.1 2067 FERTILIZER 9 2071 - 369 - Name and description Class UN No.
Load more

Recommended publications
  • Catalytic Asymmetric Addition of Diorganozinc Reagents to N
    Catalytic asymmetric addition of diorganozinc SPECIAL FEATURE reagents to N-phosphinoylalkylimines Alexandre Coˆ te´ , Alessandro A. Boezio, and Andre´ B. Charette* Department of Chemistry, University of Montreal, P.O. Box 6128, Station Downtown, Montreal, QC, Canada H3C 3J7 Edited by Jack Halpern, University of Chicago, Chicago, IL, and approved February 4, 2004 (received for review October 31, 2003) The synthesis of ␣-chiral amines bearing two alkyl groups has been hampered by the accessibility and stability of the alkylimine precursor. Herein, we report an efficient strategy to generate the alkyl-substituted imine in situ that is compatible with the Me- DuPHOS monoxide⅐Cu(I) catalyzed addition of diorganozinc re- agents. The sulfinic acid adduct of the imine is readily prepared by mixing diphenylphosphinic amide, the aldehyde, and sulfinic acid. The sulfinic acid adduct is generally isolated by filtration. The addition of diorganozinc reagents in the presence of Me-DuPHOS monoxide⅐Cu(I) and the in situ-generated imines affords the cor- Fig. 1. Bioactive ␣-chiral amines. responding ␣-chiral amines in high yields and enantiomeric excesses. sensitive imines from stable precursors has been a strategy that he synthesis of ␣-chiral amines using the catalytic asymmetric has been quite successful in a number of cases. Typically, a stable Taddition of diorganozinc reagents has produced very exciting imine adduct is used as a precursor and is converted to the imine results in recent years (1–3). This very important subunit is in situ (Scheme 2). The method involves the use of a leaving ␣ CHEMISTRY commonly found in many pharmaceuticals and other biologically group (LG) on the -carbon of the N-protected amine.
    [Show full text]
  • Pyrophoric Materials
    Appendix A PYROPHORIC MATERIALS Pyrophoric materials react with air, or with moisture in air. Typical reactions which occur are oxidation and hydrolysis, and the heat generated by the reactions may ignite the chemical. In some cases, these reactions liberate flammable gases which makes ignition a certainty and explosion a real possibility. Examples of pyrophoric materials are shown below. (List may not be complete) (a) Pyrophoric alkyl metals and derivatives Groups Dodecacarbonyltetracobalt Silver sulphide Dialkytzincs Dodecacarbonyltriiron Sodium disulphide Diplumbanes Hexacarbonylchromium Sodium polysulphide Trialkylaluminiums Hexacarbonylmolybdenum Sodium sulphide Trialkylbismuths Hexacarbonyltungsten Tin (II) sulphide Nonacarbonyldiiron Tin (IV) sulphide Compounds Octacarbonyldicobalt Titanium (IV) sulphide Bis-dimethylstibinyl oxide Pentacarbonyliron Uranium (IV) sulphide Bis(dimethylthallium) acetylide Tetracarbonylnickel Butyllithium (e) Pyrophoric alkyl non-metals Diethylberyllium (c) Pyrophoric metals (finely divided state) Bis-(dibutylborino) acetylene Bis-dimethylarsinyl oxide Diethylcadmium Caesium Rubidium Bis-dimethylarsinyl sulphide Diethylmagnesium Calcium Sodium Bis-trimethylsilyl oxide Diethylzinc Cerium Tantalum Dibutyl-3-methyl-3-buten-1-Yniborane Diisopropylberyllium Chromium Thorium Diethoxydimethylsilane Dimethylberyllium Cobalt Titanium Diethylmethylphosphine Dimethylbismuth chloride Hafnium Uranium Ethyldimthylphosphine Dimethylcadmium Iridium Zirconium Tetraethyldiarsine Dimethylmagnesium Iron Tetramethyldiarsine
    [Show full text]
  • Chemical List
    1 EXHIBIT 1 2 CHEMICAL CLASSIFICATION LIST 3 4 1. Pyrophoric Chemicals 5 1.1. Aluminum alkyls: R3Al, R2AlCl, RAlCl2 6 Examples: Et3Al, Et2AlCl, EtAlCl2, Me3Al, Diethylethoxyaluminium 7 1.2. Grignard Reagents: RMgX (R=alkyl, aryl, vinyl X=halogen) 8 1.3. Lithium Reagents: RLi (R = alkyls, aryls, vinyls) 9 Examples: Butyllithium, Isobutyllithium, sec-Butyllithium, tert-Butyllithium, 10 Ethyllithium, Isopropyllithium, Methyllithium, (Trimethylsilyl)methyllithium, 11 Phenyllithium, 2-Thienyllithium, Vinyllithium, Lithium acetylide ethylenediamine 12 complex, Lithium (trimethylsilyl)acetylide, Lithium phenylacetylide 13 1.4. Zinc Alkyl Reagents: RZnX, R2Zn 14 Examples: Et2Zn 15 1.5. Metal carbonyls: Lithium carbonyl, Nickel tetracarbonyl, Dicobalt octacarbonyl 16 1.6. Metal powders (finely divided): Bismuth, Calcium, Cobalt, Hafnium, Iron, 17 Magnesium, Titanium, Uranium, Zinc, Zirconium 18 1.7. Low Valent Metals: Titanium dichloride 19 1.8. Metal hydrides: Potassium Hydride, Sodium hydride, Lithium Aluminum Hydride, 20 Diethylaluminium hydride, Diisobutylaluminum hydride 21 1.9. Nonmetal hydrides: Arsine, Boranes, Diethylarsine, diethylphosphine, Germane, 22 Phosphine, phenylphosphine, Silane, Methanetellurol (CH3TeH) 23 1.10. Non-metal alkyls: R3B, R3P, R3As; Tributylphosphine, Dichloro(methyl)silane 24 1.11. Used hydrogenation catalysts: Raney nickel, Palladium, Platinum 25 1.12. Activated Copper fuel cell catalysts, e.g. Cu/ZnO/Al2O3 26 1.13. Finely Divided Sulfides: Iron Sulfides (FeS, FeS2, Fe3S4), and Potassium Sulfide 27 (K2S) 28 REFERRAL
    [Show full text]
  • Title Exploration of Dimethylzinc-Mediated Radical Reactions
    Title Exploration of Dimethylzinc-Mediated Radical Reactions. Author(s) Yamada, Ken-Ichi; Tomioka, Kiyoshi Citation The Chemical Record (2015), 15(5): 854-871 Issue Date 2015-10 URL http://hdl.handle.net/2433/203021 This is the peer reviewed version of the following article: Yamada, K.-i. and Tomioka, K. (2015), Exploration of Dimethylzinc-Mediated Radical Reactions. Chem. Rec., 15: 854‒871, which has been published in final form at http://dx.doi.org/10.1002/tcr.201500017. This article may be used for non-commercial purposes in accordance with Wiley Right Terms and Conditions for Self-Archiving.; The full-text file will be made open to the public on 17 JUL 2016 in accordance with publisher's 'Terms and Conditions for Self-Archiving'.; This is not the published version. Please cite only the published version.; この論文は出版社版でありません。引用の際に は出版社版をご確認ご利用ください。 Type Journal Article Textversion author Kyoto University PersonalPersonal AccountAccount THE CHEMICAL Exploration of Dimethylzinc- RECORD Mediated Radical Reactions THE CHEMICAL RECORD Ken-ichi Yamada,[a] and Kiyoshi Tomioka[b] [a] Graduate School of Pharmaceutical Sciences, Kyoto University E-mail: [email protected] [b] Department of Medicinal Chemistry, Faculty of Pharmaceutical Sciences, Doshisha Women's College of Liberal Arts E-mail: [email protected] Received: [will be filled in by the editorial staff] Published online: [will be filled in by the editorial staff] ABSTRACT: In this account, our studies on radical reactions that are promoted by dimethylzinc and air are described. Advantages of this reagent and differences from conventional radical initiators, such as triethylborane, are discussed. Keywords: radical reaction, dimethylzinc, C(sp3)–H bond functionalization, C–C bond formation, Umpolung Introduction It has been long time since the word "radical" changed its useful functional group transformations via a radical meaning in chemistry.
    [Show full text]
  • Studies on Group Ii Metal Alkyls Particularly Those of Beryllium
    Durham E-Theses Studies on group ii metal alkyls particularly those of beryllium Robert, P.D. How to cite: Robert, P.D. (1968) Studies on group ii metal alkyls particularly those of beryllium, Durham theses, Durham University. Available at Durham E-Theses Online: http://etheses.dur.ac.uk/8717/ Use policy The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that: • a full bibliographic reference is made to the original source • a link is made to the metadata record in Durham E-Theses • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders. Please consult the full Durham E-Theses policy for further details. Academic Support Oce, Durham University, University Oce, Old Elvet, Durham DH1 3HP e-mail: [email protected] Tel: +44 0191 334 6107 http://etheses.dur.ac.uk STUDIES ON GROUP II METAL ALKYLS PARTICULARLY THOSE OF BERYLLIUM by P.D. ROBERTS, B.Sc. A thesis submitted for the Degree of Doctor of Philosophy in the University of Durham JULY 1968 Acknowledgements The author wishes to thank Professor G.E. Coates, M.A. , D.Sc, F.R.I.C., under whose supervision this research was carried out, for his constant encouragement and valuable advice. Thanks are also given to Dr. A.J. Downs, formerly of the University of Newcastle upon Tyne, for his help with vibrational spectroscopy and to members of this department, especially Dr.
    [Show full text]
  • Zno and Zncdo Metal Organic Vapor Phase Epitaxy: Epitaxy, Defects and Band Gap Engineering
    ZnO and ZnCdO metal organic vapor phase epitaxy: epitaxy, defects and band gap engineering By Vishnukanthan Venkatachalapathy Submitted in partial fulfillment of the requirements for the degree of Philosophiae Doctor Department of Physics/Centre for Materials science and Nanotechnology Faculty of Mathematics and Natural Sciences University of Oslo Dedicated to my father Abstract Zinc oxide (ZnO) and its ternary alloys have high potential to compete with III-V nitrides for optoelectronic applications. Furthermore, oxide semiconductors receive considerable attention due to their low cost of fabrication, chemical robustness and high thermal conductance. The goal of this work was (i) to explore manufacturing route of ZnO and ZnCdO films using metal organic vapor phase epitaxy (MOVPE) in vector flow epitaxy mode and (ii) to master structural/optical properties of these films for preparing such as components in electronics, optoelectronics and solar energy conversion. Our starting point was to study the influence of basic synthesis parameters on the structural and luminescence properties of pure ZnO films on c-axis oriented sapphire substrates. The samples were synthesized using previously unexplored for ZnO vector flow epitaxy mode of MOVPE employing systematic variations of fundamental synthesis parameters such as temperature, pressure, II/VI molar ratio, total carrier gas flow ratio, susceptor rotation rate, etc. It was concluded that the growth temperature affects the precursor pyrolysis and in these terms pre-determines the actual II/VI molar ratio available at the reaction zone. Concurrently, direct II/VI molar ratio variations by supplying different amount of precursors influences the properties too, for example, changing intrinsic defect balance in the films.
    [Show full text]
  • ALD Grown Zinc Oxide with Controllable Electrical Properties
    ALD grown Zinc Oxide with controllable electrical properties E. Guziewicz 1, M. Godlewski 1,2 , L. Wachnicki 1, T.A. Krajewski 1, G. Luka 1, S. Gieraltowska 1, R. Jakiela 1, A. Stonert 3, W. Lisowski 4, M. Krawczyk 4, J.W. Sobczak 4, A. Jablonski 4 1Institute of Physics, Polish Academy of Science, Al. Lotników 32/46, 02-668 Warsaw, Poland 2 Dept. Mathematics and Natural Sciences, College of Sciences UKSW, ul. Dewajtis 5, 01-815 Warsaw, Poland 3The Andrzej Soltan Institute for Nuclear Studies, ul. Ho ża 69, 00-681 Warsaw, Poland 4 Institute of Physical Chemistry, PAS, ul. Kasprzaka 44/52, 01-224 Warsaw, Poland Abstract. The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free carrier concentration is very low. For optimized ALD process it can reach the level of 10 15 cm -3, while mobility of electrons is between 20 and 50 cm 2/V·s. Electrical parameters of ZnO films deposited by ALD at low temperature regime are appropriate for constructing of the ZnO-based p-n and Schottky junctions. We demonstrate that such junctions are characterized by the rectification ratio high enough to fulfill requirements of 3D memories and are deposited at temperature 100 oC which makes them appropriate for deposition on organic substrates. PACs: 81.15.Gh, 72.80.Ey, 73.40.Lq, 68.55.Ln Keywords: Atomic Layer Deposition, Zinc Oxide, thin films, electrical properties, Schottky junction, 3D memories 1 1.
    [Show full text]
  • Aldrichimica Acta, Please Contact Us By: Phone: 800-325-3010 (USA) Synthesis and Applications of Diorganozinc Reagents: Beyond Diethylzinc
    OPENING NEW FRONTIERS IN SYNTHESIS AND CATALYSIS VOL. 42, NO. 3 • 2009 Discovering New Reactions with N-Heterocyclic Carbene Catalysis Synthesis and Applications of Diorganozinc Reagents: Beyond Diethylzinc New Products from Aldrich R&D Aldrich Is Pleased to Offer Cutting-Edge Tools for Organic Synthesis Phosphine for the Conversion of Azides into Diazo Compounds More NEW Solutions of Common Reagents Due to difficulties with their preparation, especially when sensitive functional Every researcher has experienced the frustration of using on a regular basis some groups are present, diazo compounds are often overlooked in synthesis despite lab reagent that is annoying to handle: It might be difficult to weigh out, extremely their synthetic versatility. Myers and Raines have developed a mild method to volatile, prone to static, or noxious. Sigma-Aldrich has designed a series of solutions convert an azido group with delicate functional groups into a diazo compound intended to make many of these common reagents easier to measure, handle, by using the phosphine reagent shown below. Formally, this reaction is a and dispense. reductive fragmentation of the azide, like the venerable Staudinger reaction, and is highly selective in most chemical environments. 2,2′-Azobis(2-methylpropionitrile) solution, 0.2 M in toluene 714887 100 mL H3C CH3 [78-67-1] N C N O N C N C8H12N4 O H3C CH3 N FW: 164.21 P O O Iodine monochloride, 1 M in acetic acid 714836 100 mL 1.05 equiv [7790-99-0] ICl 715069 ICl N N 3 1) THF/H2O (20:3), 3-12 h 2 FW: 162.36 1 2 1 2 R R 2) Sat.
    [Show full text]
  • Product and Product Group Discharges Subject to Effluent Limitations and Standards
    PRODUCT AND PRODUCT GROUP DISCHARGES SUBJECT TO EFFLUENT LIMITATIONS AND STANDARDS for the ORGANIC CHEMICALS, PLASTICS, AND SYNTHETIC FIBERS POINT SOURCE CATEGORY - 40 CFR 414 April 2005 Office of Water U.S. Environmental Protection Agency 1200 Pennsylvania Ave., N.W. Washington, D.C. 20460 Table of Contents Section Page Introduction. 1 1 Summary of the 40 CFR 414 . .2 1.1 Regulated Parameters. 3 1.2 Requirements for Direct and Indirect Dischargers. 3 2. Identifying and Classifying Products Whose Production May be Subject to the OCPSF Regulation. 5 2.1 The SIC Manual and Codes . 5 2.2 Industrial Categories Applicable to Chemicals and Allied Products. .6 2.3 Part 414 Applicability to Production of Chemicals and Chemical Products. .6 2.4 Applicability of Wastewater from On-Site Auxiliary Operations. .8 2.5 General Discussion of OCPSF-Related Products Whose Manufacture May Not Be Regulated by Part 414 . .8 2.5.1 Products Classified and Previously Reported under Specific SIC Codes That Are Not Subject to Part 414 . .8 2.5.2 Products Listed in Part 414 That Are Regulated by Another Industrial Category Are Not Subject to Part 414 in Certain Circumstances . .10 2.5.2.1 Organic Chemicals Regulated by the Iron and Steel Category (40 CFR 420) . 10 2.5.2.2 Organic Chemicals Regulated by the Pesticides Chemicals Category (40 CFR 455). 11 2.5.2.3 Organic Chemicals Regulated by the Pharmaceutical Category. 11 2.5.2.4 Products Regulated by the Plastics Molding & Forming Category (40 CFR 463). 12 2.5.2.5 Organic Chemicals Regulated by the Soap and Detergent Category (40 CFR 417).
    [Show full text]
  • High Purity Metalorganics (HPMO) High Purity Metalorganics
    High purity metalorganics (HPMO) High purity metalorganics We are Nouryon, your MO-sources We also operate a world-scale Nouryon high purity metalorganics trimethyl aluminum (TMAl) plant, partner in essential division was created in 2000 in order making us the only high purity chemistry for a to better serve the semiconductor metalorganics producer fully sustainable future industry. back-integrated into this important raw material. We use leading edge This allows us to focus on the specific transfilling techniques that ensure the We are a global specialty chemicals needs of this market while leveraging repeatable and consistent delivery of leader. Industries worldwide rely our global distribution and service the highest purity metalorganics in on our essential chemistry in the networks, manufacturing scale and every cylinder that we supply. manufacture of everyday products expertise, global R&D, and expertise such as paper, plastics, building in safe handling of metalorganics. Our La Porte site is an OSHA VPP materials, food, pharmaceuticals, As such, we excel in safety, quality, Star site, and is ISO 9001 and and personal care items. Building consistency and innovation. 14001 certified, recognizing strict on our nearly 400-year history, the compliance with environmental dedication of our 10,000 employees, We focus on the production of regulations and adherence to state- and our shared commitment to high purity MOsources based on of-the-art quality systems. business growth, strong financial indium, gallium, aluminum, zinc performance, safety, sustainability, and magnesium. These products Our products are distributed globally and innovation, we have established have >99.999% purity and are sold using regional transfilling and/or a world-class business and built in electropolished stainless steel warehousing distribution centers, strong partnerships with our bubblers to the semiconductor ensuring close proximity to our customers.
    [Show full text]
  • Durham E-Theses
    Durham E-Theses Atmospheric pressure metal-organic vapour phase epitaxy of InP, (GaIn)as, and (GaIn)(AsP) alloys Butler, Barry R. How to cite: Butler, Barry R. (1989) Atmospheric pressure metal-organic vapour phase epitaxy of InP, (GaIn)as, and (GaIn)(AsP) alloys, Durham theses, Durham University. Available at Durham E-Theses Online: http://etheses.dur.ac.uk/6545/ Use policy The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that: • a full bibliographic reference is made to the original source • a link is made to the metadata record in Durham E-Theses • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders. Please consult the full Durham E-Theses policy for further details. Academic Support Oce, Durham University, University Oce, Old Elvet, Durham DH1 3HP e-mail: [email protected] Tel: +44 0191 334 6107 http://etheses.dur.ac.uk 2 Abstract Atmospheric Pressure Metal-Organic Vapour Phase Epitaxy of InP, (Galn)As, and (GaIn)(AsP) Alloys. Barry R. Butler An introduction to optical communications and opto-electronic devices is given, which demonstrates the motivation for research into III/V devices, and materials. Different epitaxial growth techniques are compared, an introduction to Metal-Organic Vapour Phase Epitaxy (MOVPE) is given, and the author's reactor is described. The reaction chemistry of MOVPE is discussed and results from studies of the passivation of p-type InP are used to confirm the surface nature of reactions.
    [Show full text]
  • Ligand Exchange Reactions in Ingaas Metalorganic Vapor-Phase Epitaxy
    Journal of Crystal Growth 191 (1998) 332Ð340 Ligand exchange reactions in InGaAs metalorganic vapor-phase epitaxy M.J. Kappers, M.L. Warddrip, R.F. Hicks* Department of Chemical Engineering, University of California at Los Angeles, 405 Hilgard Avenue, Los Angeles, CA 90095-1592, USA Received 16 July 1997; accepted 23 January 1998 Abstract Metalorganic vapor-phase epitaxy of InyGa1~yAs from triethylgallium, trimethylindium and tertiarybutylarsine was studied using on-line infrared spectroscopy to monitor the organometallic compounds in the feed and e§uent gases. The film composition was measured by X-ray di¤raction. Ligand exchange reactions between the group III sources were found to occur in the feed lines. The new species produced were trimethylgallium, dimethylethylgallium, methyldiethyl- gallium, dimethylethylindium and methyldiethylindium. The thermal stability of these species varied over a wide temperature range. For example, the ethylindium compounds started to decompose at 250¡C, while trimethylgallium began to react at 500¡C. In the square-duct reactor used in this study, the wide variation in the reactivity of the precursors resulted in films that were indium rich near the reactor inlet and gallium rich near the reactor outlet. ( 1998 Elsevier Science B.V. All rights reserved. PACS: 82.30.Hk; 81.05.Ea; 81.15.Gh; 82.80.Ch Keywords: Ligand exchange; Metalorganic vapor-phase epitaxy; Infrared spectroscopy; InGaAs 1. Introduction highly uniform in composition, thickness and cry- stallinity, since slight variations in these properties The fabrication of In0.53Ga0.47As/InP hetero- will seriously degrade the quality of the InGaAs junction bipolar transistors (HBTs) requires accu- epilayer [1].
    [Show full text]