United States Patent (19) 11 Patent Number: 6,113,977 Soininen Et Al

USOO6113977A United States Patent (19) 11 Patent Number: 6,113,977 Soininen et al. (45) Date of Patent: Sep. 5, 2000

54 METHOD OF GROWING AZNS:MN A. Yoshikawa et al., “MBE-Like” AMD “CVD-Like” PHOSPHORLAYER FOR USE IN THIN-FILM Atomic Layer Epitaxy of ZnSe in MOMBE System, Journal ELECTROLUMNESCENT COMPONENTS of Crystal Growth 101 (1990) pp. 86-90 (no mo.). 75 Inventors: Erkki Lauri Soininen; Gitte Y. Wu et al., “Atomic Layer Epitaxy of ZnS on GaAs Hárkönen; Marja Lahonen, all of Substrates by Metalorganic Molecular Beam Epitaxy”, Japa Espoo; Runar Törnqvist, Kauniainen; nese Journal of Applied Physics, vol. 29, No. 5, May, 1990, Juha Viljanen, Espoo, all of Finland pp. L727-L730. N. Shibata et al., “Monolayer Epitaxy of ZnSe on GaAs 73 Assignee: Planar International Oy Ltd., Espoo, Substrates by Alternating Adsorption of Diethylzinc and Finland Hydrogenselenide”, Journal of Crystal Growth 101 (1990) pp. 91-95 (no mo.) 21 Appl. No.: 08/927,523 I. Bhat, “Atomic Layer Epitaxial Growth Studies of ZnSe Using Dimethylzinc and Hydrogen Selenide”, Journal of 22 Filed: Sep. 11, 1997 Crystal Growth 138 (1994) pp. 127-130 (no mo.) 30 Foreign Application Priority Data M. Migita et al., “The Preparation of ZnS:Mn Electrolumi nescent Layers by MOCVD Using New Manganese Sep. 11, 1996 FI Finland ...... 96.3587 Sources”,Journal of Crystal Growth 93 (1988) pp. 686–691 (51) Int. Cl." ...... B05D 5/06 (no mo.). 52 U.S. Cl...... 427/64; 427/255.32; 427/255.33 58 Field of Search ...... 117/88, 104; 427/64, Primary Examiner Janyce Bell 427/255.32, 66, 255.33 Attorney, Agent, or Firm McDermott, Will & Emery 56) References Cited 57 ABSTRACT U.S. PATENT DOCUMENTS The invention relates to a method of growing a ZnS:Mn 4,058,430 11/1977 Suntola et al...... 156/611 phosphor layer Suitable for use in thin-film electrolumines 4.389.973 6/1983 Suntola et al...... 118/725 cent components. According to the method, the ZnS:Mn 4,442,136 4/1984 Johnson ...... 427/64 phosphor layer is grown on a Substrate by means of the ALE 5,624,705 4/1997 Stutzmann et al...... 427/64 method using volatile Zinc, Sulfur and manganese com 5,695,809 12/1997 Chadha ...... 427/64 pounds as the precursors. According to the invention, an organozinc compound Such as diethylzinc or dimethylzinc is OTHER PUBLICATIONS used as precursor for Zinc, hydrogen Sulfide or an organo J. Hyvärinen et al., “Mass Spectrometry Study of ZnS Sulfur compound is used as precursor for Sulfur, and an Atomic Layer Epitaxy Process”, Journal of Crystal Growth organomanganese compound or organic manganese com 86 (1988) pp. 695-699 (no mo.). pleX compound is used as precursor for manganese. The M. Tammenmaa et al., “Growth of ZnS Thin Films Using invention provides a display component with drive-voltage Zinc Acetate as Zinc Source and Manganese and Lanthanoid Symmetrical light emission and Stable characteristics of B-Diketonates as Activator Sources”, First Symposium on luminance level and turn-on Voltage. Atomic Layer Epitaxy, pp. 18-21, VTT, Espoo, Finland, 1984 (no mo.). 20 Claims, 4 Drawing Sheets U.S. Patent Sep. 5, 2000 Sheet 1 of 4 6,113,977

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