MIXER PRODUCTS cuitry evn but erag with are harmonic bias presion the LO the B with bandwit gy A1 econm Q RF, roadbn 1: couple : aplied RF t single shown he OIF LO a and the pr for usin 90° SI enrg ke odu ical Alte Bot Alte Bef What L hs mon of ne no RF -to d d y mixng O N g SINGLE-BALANCED h be cts RF h ore d to 18 to t rna rna L rec a ybrid ne wit he (co iffer GLE cove y ± single low: itor INPUT dio 0° the ne an is SINGLE o tely tely ho ar exp int mon evn f R iver ∑ d balnce hyb de prod the th ut nce rage e ermo to in-p , , fro laing -ba e -, in on the bridg coup rid fro filte dioe RF ha ucts m BALANCED hase is an 0/180 e lan DOUBL mode LO fro dul nt ba rmoni rs, tha th c y di d ar e INPUT le ced ould m en ation e sin lan th en fer f or ° ( e ( por cur BA shown b i.e, RF 2 di is ds, al RF/LO canel ut gle- o ap ced c m ode. to l r also t differ ents. evn L ta Q (Bridge) ixer and of no whe the LA LO 18 O 10 bal lie ble ces m E- ue th ise PORT belo products d ed ma ixe enc GHz ± anced Early con N re Davi i e LO sola orde o of 2RF, st rej A betwn 180° rs ut ke i C tun w). n ds fi IF the pow ND gur of ti eli ED an the ion we OUTPUT an wi D able cti on mixe products ri L Thi mi phase d MITEQ hyb deba ne no ve, at on) er O instea sin sho e 2 nated was s ions, asily s S L H ± or TRIPLE-BA to rid r to . ± gle-ban aupge , ap uld one C sin 4 an nd no fixed In a 26 to RF). pe a d de HOTKY MIX R howev Mo bias nd pa t are gle- re m a h each (2 d ars could GHz, pen dito is ceivrs e ir LO de -10 ban ntio cane

RF HARMONIC An p NY o very and de ced l ro ERS f d le SB0 ± dp dBm h chose 178 n, dioes. n r, io blem. nt 10 2 3 owevr swer RF, sing de su tha a cirut. simlar single-ba led double util s on RF ∆ ∑ LO , pres LANCED 618LA R = = 4LO w DIO le • INPUT ized 38 45 filters in 123 a F HARMONIC h The RF LO ith TEL: - to b ow one-di th This a the alnced to (-10 t a The (0 a -ba ± e two (631) DE the ply 42 46 17 figure la any the about. subeq wel can

ne L ± no R dBm) outp RF IF b nced lanced dBm) techniqu i MITEQ dioes delta a outp DOUBLE BALANCED(Ring) ring 439-20 the RF etc.) sable easily MI 41 41 15 the below mixer mixer of uent o SCHOT LO do or r port. XERS dioes th mixers? un e uble-anc can in single-ba Model no Th sepa no to . LO e ne redu • alowed with sh balnced a L ise double-a e cir th INPUT FAX : L not ± In ows ± ci ne e single-bac cu ra ne enrgy ct rcuit multiocave w th SB 18 R te overlap (631)

its RF HARMONIC R ion e i the s 0° r th o e KY are mod 0 verl 10 2 3 or and e 436-70 mixer ced port 218LR5 impedan equ d la LO, tha cane ∑ ∆ mixer nced, LO p a e th resulting articuly = D = ping mixer iva a 2 4 of e 123 HARMONIC LO nd RF RF 8 9 may is I band RF le ODE operatin d l

• no L ± no R (a lation wheras o (0 (-10 o nt us ce IF w .miteqco a mixer ften bser 30 4 53 LO lso w coverag. nd dBm) OUTPUT be es ciru width ith matched. dBm) products IF shown), and presnt easy used of ve this 0 15 28 40 cirut enr t evn dBm sup cov only only and cir RF to in - - - - C -3 4B/1 37 BALANCED SCHOTTKY DIODE MIXERS (CONT.)

The double-balanced mixer circuit provides mutual isolation of LO, RF and IF energy, without filters, because of the combined properties of the ring diode circuit and wideband baluns. This results in suppression of all even-order harmonic mixing products of both the LO and RF (i.e., 2LO ± RF, LO ± 2RF, 2LO ± 2RF, etc.). The double-balanced mixer, however, requires 3 dB more LO power than the two-diode single-balanced circuit assuming, of course, that the same barrier voltage diode is used in each case.

Q2: What are the major differences between triple- (or double-double) and double-balanced mixers?

A2 : The triple-balanced mixer employs two diode quads (eight junctions in total) fed by two power splitters at the RF and LO microwave baluns. The architecture allows both quads to be coupled together with mutual LO-to-RF iso - lation. The most significant advantage of this circuit is that the output IF signal is available at two separate balanced and isolated terminals with large bandwidth (typical 0.5 to 10 GHz). The IF signal and return path are isolated from both the RF and LO ports, thus allowing for overlapping frequencies at all three ports. A slight disadvantage of this circuit is that it will not yield a DC IF. In contrast, the standard microwave double-balanced mixer often uses diplex - ing techniques to separate the IF signal from the LO band. As a result, a microwave double-balanced mixer cannot support widely overlapping RF and IF frequencies while maintaining a DC response at the IF port. The theoretical single-tone spur product port cancellation relations are the same for each mixer circuit, however, in practice the triple- balanced mixer and only certain designs of double-balanced mixers with high port isolation yield the best spur sup - pression (MITEQ DM Series). M I X E R P R O D

RF LO U C T S RF LO

IF

DOUBLE-BALANCED MIXER

IF

TRIPLE-BALANCED MIXER

Q3: For what applications are triple-balanced mixers best suited?

A3 : They are especially valuable for translating large bandwidth segments from one frequency range to another with low intermodulation distortion. The high IF-to-LO and IF-to-RF isolation of this class of mixers makes the con - version loss flatness much less dependent on IF frequency mismatches that almost always exist at the RF and LO ports. Recently MITEQ perfected a triple-balanced 4 to 40 GHz RF/LO mixer with a 0.5 to 20 GHz IF (Model TB0440LW1). Many customers are using this mixer with several fixed LOs to downconvert the 26 to 40 GHz portion of the millimeter band into existing receivers in the 0.5 to 18 GHz range. This mixer is also useful for upconverting the 0.5 to 18 GHz band into a fixed Ku-band second converter, thus eliminating the image response without tunable preselectors.

100 Davids Drive, Hauppauge, NY 11788 • TEL: (631) 439-9220 • FAX: (631) 436-7430 • www.miteq.com C-341B3/18 38 MIXER PRODUCTS devic. is fash Q junctios. Q A6 part A5 DC typical and by bal uniq trum as + line increas demoulat relat ulat GH (m). ble-ancd (i.e que ± Q lap A4 3 6: 5: 4: f n 2 galiu the : : : t z ot ors , ncies icula to o ion, nced ue ing a ed balun prod mf ofte beco n Fo + D 4 d de o 6 b to tha RF C, RF Th What Ho Using Non In For Dou m ver S GHz r r but alun f n uce in d 1 sired mixers (2 in t s int mes exa Bm he t t h x e arse bu ± he w gle p an rs f ave ope se comuni bias ble- erst 1 nf ra f what owe 2 orme n t , (p d ha IF mple, m d f o ca LO ldom th ew ampl -tone L a esig 2 3f mor nide in is r at rat ). O uch excl rmon IF ra er se time ) 1 hi put r typi al en bl , becau me adi and e nge pow by gh In fr n e as 4 e ifer apli whe d t ( e equnci nced if over spur f BA cal GaAs) 1 m compl iscu -var LO 1 t pendi dou ics cation xced ant 6 car hi ent . a w ti er. re ake wi dB .mf dB, onal s n ter e y se squ of pr rie s ying cat th po bl L case, nar two LO- r mi dou b com s m 1 a Sch equi esnt ng) e- A ex. the , no ) 3 the y wer on re are b it es xer . inol 20 ca signa re io ro 0 bal NC ands to-R no vo sin ble a not otky am E ns pr tha jectio w dB LO re n is and s 3rd The w dB ogy, pri w ach ltage ed 10 esion operat i o nced gle- e a are har s 3 ave F ount th ls ED e ar m onl r pli me i nput ( yi r by in dB L bal Model e r moderat e e ecogn Davi n dio two in (t har eld mon a O-toRF xtremly most y wo-tne I/Q cl a cabl an an in candi e quir mu 9 mixers sin of mo m harmonic ds asif S s put m spur nce signa p es tones dB, d, d ic up ical oint mo i 30 m D gle-ton onic C nput s ize re e ri uti owav r two-ne the made date DM02 ve, pow to HOTKY d i or to ly etc. dulators. solati ed dB L tabl liz l th of with isolatn. O LO refo, wide for (f mixers i H can has iso r +2 ntermo filt ed e is aupge , LO a er m the p e as la s e 3 la ly ower 08LW2 po as with e inmu ) so in te ring or d in . (3 mix th an n dBm tion ba a ouble doubl mixer put we d relatd The -ca third e to lower m an b with d dulation i ton ndwiths. Conve i m nter othe uild L np ca B r with t (40 the x h led NY at O of The is a , an ou es n ut incre n LO-to o D d - DM0416 e-ba th in and a signa 178 avilbe. LO r co rd -t elimnat to RF an ma t to e “z g e a p single-qu IODE junctio itonal fre o ntioal er ach MI re u st odul 5 ero -o aditonl block d the ase), products) power. trix t lanc is 0 and quency -RF beca TEQ utp spur l. ap simultane tri • dB) L typ o b frequ TEL: ation cha ower Th LW t ia se ple-b h ed LO licat isolat f micro ica i we o er s” use ous an met th e MI ad D t power 2). r In rt. (631) The of em m M (f L ly s phase ports. due d, f expct complexity ons ilco O ad ncy 1 mixers requ of al als oducts?pr si m ixers XERS ha ) w o ously I the Seri , spe n g n 439-20 doe req ca a the such + t nal rmon nced n i and ad ve o o wher slo o tion, re n n ci f e ver detcors, Scho uir ncy the s s diton fo orde the s fied pr doub fed pe = be to si no a e as base re ics of od n 3. the multiocave re d st mixers? no torid se ce RF equa , t into t • ( the tha a tky uce LO the doub functio , l switch t C are nli e FAX : t e m ypical DC-coupled sui the ther -b 5 inpu semicond re O the dioe an p ± two the l alnced o ear dB I/ p ower ted? (631) le NT to is ut 4 n. balun Q re a t -b - 2n pu the t are power no mp sent above the ton signal o mod transfe wel alnced Cert clasife .) qua 436-70 bandwiths d t 16 is s l requimnt e mixer ifer, twice orde type h uctor at ulators mixers at as third ds usaly a armo GHz outp sup in (f this t th h RF lo t wil h in e mixe products d e as in mixer w e • of m ply o ), nic ve ha by lev. w .miteqco the outp r outp ateril operat w offset and a der but many the detrmin r of rm for ith rs sion and thei sinuodal frequncy ampli s for the onic are (i.e, below taper demo product a use r Tr phase , 40 are of has dioe spec mixer orde over such dou iple- al with fier, fre the 2f dB ed so of a a 2 1 - - - - - C -3 4B/1 39 MIXER PRODUCTS /140 -34B C , - - ly at of be the the the , wer pas diode at princi power action. po can remain usual MITEQ level ? r e x i m amount for both 3 O Basically a RF possible, resistance L IP The each are . duct n i new e between ized he .miteq.com ww o l t d) given dances i not r s encountered. th a w t impedances ed, ion. p but n a • u is pe t c diodes, input e in armonics , g switching ct an ratio u n h n on for er im of th wh ti a mb jun ifi ee this atin g la balance b RF n pl If i actually d o r p vel ower t ) mixer onsinusoidal ced t 436-7430 du m including has e reco p . a l ve n , lly u urce o a T r in n o s). d n: z) termin m triple the ca ha n amount so r i products are ro a (631) rm the we i t a e p t or s) GH er used, te the ON for r l u n the band e i or yp T po l IFs by o f rd AX: F 3 ding). relatio t drain 12 ar F ble st d s (C • ss na available, -o c. IP and R o a d o m environmen t uble used pen the pa the circuit dou n r e (8 inter ency outpu do third t transi also to by cause way input d e n i each e ct re atent we re 439-9220 e an mixer of a balance ton a frequ S XER (p fe f - single, desired ). n o reflectio e RF/IF rang t same characteristi 812HI3 i the (631) LO time RF greater two MI B). the orts individual IF ency n of slope d (i.e., d B p circuit and field the e mixers the TEL: d ± y nd t l u m external semiconductor th SBF0 the ) • 3 each balance system of y (+3 DE frequ a or b ctor d n s ledge ction RF2 u fined power mixer a f O and into n the w (beyo as L nsitive de 2 11788 good nd de ju h ut single-an of ced separate o DIO Model in - e l i m rt. tp kno g complexit double d NY level. orts duct the to ta voltage/current inse ± the are po it multiple , However p o f e ou , y (i.e., f r n i s diodes o r da ll mixer will g o p th at ad r semico influen IF a source RF s degree xe RF1 ny l lo l drive MITEQ f circu of tion a a at to cts d e r i mi 1 or ene requires iode auppauge, la are t xi ate m forward uring s er lation. nd the H d t m g a leve l x ium -order ate u a ( ta IF m n a The as iso odu r powers d ia TTKY HO e e ion h st ve, ct, mi s e d n t of t s. inpu armonics tky su ri pr epi u nt th ed ixers at u p h hird we the me D n ort d me t ot . er F n twe ng f rmod at m n lo nd ne y SC to ce nse R to: e ds o e rod or at a r or in a t b l erp be etal p s th Sch s n avi i te i high latio ost D er D spo termin uch int the uestio (m gn in outputs igh expo ed RF gna m O. fts ple q term the m re ss h d l e v e l ical dB L ti si odu n 100 nation i igh conducti le vi pow CE ing , IF a is ly i of shi ul ent desi the der h lex actice typ s in s 10 mi g m cs. LO e h t N lly nal a to pr LO band t -or the in dBm LO esistive der is nterm ter the a r ixer i subd d pend omp e, erm rd level uir t or the d LA c m s e n moni s MESFET mixer is the hi t-of- due Inter oo de t r rtiona g e +23 The de fect f g an reflected and req with ion F a ou , ly th se g har es i m r po a ducts RF BA mixer t. or db xampl R lyin db f each version one he l, to a l, e cts O g e t ro rathe ent t ulat asing e pu orts. L p , RF usin ro diod p ding re a app th in e d nt ispro mixer mixer of ll era b ET broa rec dire For e d wo-t a y t nera is d e t e a a rules en ion a incre lied b r re th LO comin e re th ve mpa inclu is e e gen ermod ge an ficie f ag fo g wh ESF in d h of r ulat rat by to . wer app Mo In Int Th a h W T Th Use Ha In Use Co use rt, su hat M t n an he t po po is mixin dBm IF n l the rred gene same rmod and powe O advant : e 3 t e L riatio 3 u LO LO each + A7 the : 7 Q pal b 1. 3. reduced will wh of , RF design refe sive leve Int va 2. 4. MIXER PRODUCTS levs. but senitv of Q10 mode recovy chose tion simultaneo tion capbilty the Q9: filter, having rious to to theory RHG A1 unit A9 A8 Q The 8: 18 th th : : 0 s more I of withou e F e : : prin yield thus and m by hig is LO cap 35 an ap simla ixng S a Fin Mor Ano A Wh I Wh Th W y 3 n pre ciple n in ome . d, imp side plic 1 .5 dB abilt lea re a h pro gen e I an aly sel to F nd, at at at t e sen the s t du dB her DB he pro r ort kage a over f d gres r RF 3 requ cust iso era disa f , ece tion y cing rom is a a . r 0 u o t cte ant, spe us ducts dvan re is Ser ad nsyme f MITEQ fo GHz) lation l, t an co ntly sive ome dvan 4 h d ou en gre s? re, vant the t cia re al the e ie fo d to urse comun he BA t cy ta qu s r mo princ L atly of h ly at , l the . rs 1 n lin O ta as ag requ sytem o ve ge d ir tha ew The be MI thes p , f b re ges tri L iffer emp e cover ng e erso rsi doub andw m extn R mu ar ter A c d TEQ t iple ba expn of F ir ixer oes cause ons 10 bal a icato ing NC u ch o loy en por n lun nel the pconve LO- f mi lin age inpu i s , de. un per a dth LO th ces hig 10 mo of w the pairs t dva crowa g uti desig si e ED FDM n to e r ). l cen of ela e t ve the of at ra de lize Davi evn b th -RF have g e between pre nta Thi a new For rte t t r e 5 ha tive st io he i ma nd o t m ds n ve o FDM S desig RF t f R sel t s. r s he iso u L ge lf o p e s I/ e D harm F LO t or C t O-t perfected e b xh ch u Q -of to th DM ri 2 xample, req Th da alu la image ba nit ve, more 0 HOTKY of cti mod e ib e e o-RF t n -ban tio de p he is GHz. nce d s n uirng v normal its H on n ha o the even is en dwi and aupge , n sig a nic mixers design is ulatio input re se best tha (45 s, co d re re harmonic isolat n d idealy DB the mixe rejction quiremnts a simlar m t nvetioal noise. r FDM spone t h har ca e dB new the a frequ n p l un power. a ki Mod n an and erfo is t NY requi r o monic ively typica n its b LO n a d syntheizd suite D g mix m e 178 re to rmance (20 el hybrid it ty to DM ncy IODE o up- optimzed t an han r d picaly tha h slighty DM052 er e This l d fal i ig me taperd dB fficult (se , for mixin d sym a for • h one S bal nd conve I nts, exp on TEL: F cirut typical). IF e e 10 at means ries extr m cove uns have Model downc fre to MI higer can g? the ectd band percnt etr (631) the from LW f g ach nti quencis. o r i o me r skirt to c ra offe o XERS a 1 the f carie o und simulta chiev 439-20 bal an polgy. ge ie The nal FDM032 centr d has do from ly (2 ouble- ve r same vert of un ban inpu ubl b ar dB) do microstp for r major an hig th o e which rejction VHS/UF e-bal uble-anc adbn n dwi ultra-hig e r an t The r eo e I conversi • nar ( F isolatr and RF 5HA1 balun, mixers la C d, FAX : IF u co l tive th imtao a O s typ row y therfo, skir freq nced d verag triple- i i (631) units) elds NT m l b ). mi ica y can thus alun t a uency fo can dou b (-5 RF selctivy crowave ge l .) r r 436-70 ns t mi oa conve y . be d u los, lower pic ble-ancd of yied ned re (invetd band often In xers? mixers. d o to mainted the ba je f co al DC ad this -60 cti in r microwave n more verag LO sion cost w diton, aplictons n d g be o • to as arowe i n d w .miteqco dB) and image dth -to-RF esign 8 In elimnatd, and los a dat in LO GHz aditon, rejction tw the one wi 1972 at mi o-ple power i in th mage relat r isola links. band ejc spu hig xers fil with can thi DC ter (2 at s - - - C -3 4B/1 41 MIXER PRODUCTS /142 -34B C - - - - a xer rel i sin that sine each m resis curve speci at general VD yielding A on ohm instant ti diode current E/I .miteq.com ww e improved or therefore, usually 50 characteristic) w Ω thus semiconductor th Ω • st t the 25 RESISTOR is, lting 25 OR RESIST di a to . power are +0.5 +1 (E/I 3 in l fixed on l ta IP Schottky resu LO yielding cti , greater a 436-7430 me idea us ous the un the mixers to j a results bly th amplifiers istortion r in of DS an s d o ra (631) i n, ive V of ate ct than to t at g MESFET u AX: F d in el r . • owers S the nstantane po s i mixing D p I conside istortion distortio d on greater of DS is he electrode RF t V duct s compare -0.5 0 V or no semicon ia of ro 439-9220 b p gate dB intercept diode ge ach .. about intercept each source diode? r e on yield gs e i ra tive (631) 10 V -2V S th third-order at ey y the l (the rs ottky ave th TEL: ERS -1V the nega 0 cal • odul ottky would (i.e., he 50 across ird-orde Sch t -50 in we 100 m DS mA r -100 R IXE how r I ypi th s t i power strates Sch te fixed is the s MIX is M 11788 r in a a s illu The signal ) Ans LO xe for course, NY ve F xer of r ransisto e mi LO of R T reduction the mi - cu elow lin curve FET th a ad b t 2 T input). SFET and lied is bo fect f two than RF FE auppauge, ES pp , sistor ure E of H the - e a inste er t 3 re ES fig ME M th ld straigh a ve, Ω Ω at mixer IP M ri an . T e r MESFET a ions in D 25 RESISTOR 25 OR RESIST Fie a e , (2RF The gre Th +0.5 +1 m ds red ce th of FET owe or SFE B mixing f . r avi fro p est e. an? E 3 d a en o D esents f tone uct e). M lin 3 IP easu o me for DIODE Qu 100 m is epr gnal powe ation fer dif r cal two- ght diod case si o s t icond ET nput V d ai i LO The ntage typi devi ave the um an str SFET . a w ottky Sem mixer The me dva (in e the t. a MESF oint ME SCHOTTKY . o tted I sa de Sch and p at 3RF) sin significan al a por maxim ge o a do e th ± zero t V he dio e e t -0.5 0 ed o lta pitaxial t does bias t is O pu he th RF E ice t us a L ott rincip diod vo most tky V e l d p , ot y to e out his ot ta t n b es ag e e tky ing e e Th (i.e. at similar Me What Th Why Th tive th Sch volt 3 W to -1V IP Schot operat for one 0 rela shown r LO operat wn). : : 50 : : t ve. -50 a , e o 100 o mA 1 2 -100 I rul fied LO A1 Q gle-t A2 tha junction Q of sh the ative tor poo wa MIXER PRODUCTS cirut LO LO Q A4: ME 18 fabri niqu achievd Q cuits A3: and esntial and, betwn d coefficent. the signal LO dio mode, since in conduti FE gate, aperin apl B 4: 3: view T GHz comp SFETs, and signal, powers pow e e ied cation achie gate ther als bot ef has devic yield has o t fect RF er acro What Active What Ther Ano Ano I Pasive o hat th n g f resio h th when oct ciru ve t e fo at b d acro he a h t pro e t t s xist. ively sign he durin of e he he iffe d re, th th are owev For s ave are lo LO la is extra er er +24 n ces refo iton it RF w are n renc FE LO s rge ar ar requi th sig als a pres em t naro difficu g p su d bandw (ga FET mo o de IP e T e e t oint iff re, na sig a he L , r, d two, a a itab 3 voltag d ploye cost for qua er m plied O Bm t the the du te re rain sin he 5 l a is nal if ixe d nt w enc LO 0 mixer a nd op s lt la makin le to rain ap the te p ce id m y co lin o to b filter o a ting rs d di di er and s hm . e fo th o mo or so an an f pl t roxi st our ear to f no achi to en fer f sad P1 an the ation, ar r For ied sour sw e betw s o desi urce dwi d s der a and g sour t the per e m d LO ce ma h have ave RF LO dB ings mi or second ram 4 dr ev van e to typ ake dth P1 ce. at gni ) ation en si chan xing ain te ga 10 mu sig chane but LO ce sepa or rag ban ampl e ces and ical lico atic ly ta dB n IP wi te apl a co gai IP nal External ltip g Davi i can e equal th mpe rathe VSWR dwi ges 3 th ser ly reg n with and - nver octave 3 M RF/I rate a betwn ifer stage n cure (e.g, el e of d e icat nd ds r exi DC l equi i l w dth itle iode ion M es of dance. ot ES di + D resitan of contrls ith sion 15 st ES gates ned IP 27 to ri odes ons, swing bi nt the , ea of ve, overla o a ciruty rem imag 3 s a or LO a a h particu the ased dB FET FET f d t is sily FET nd igh octave o i H a n Bm los M the se MESFT f aupge , en o drawn, an or and p activ d a LO Scho gr U s multiocave e ESFT ne ce. lf ower sh mod p). , the and for n q like ts ea from sa d switch more rejction g wh l like ua an a ot M p ate (d ca the baln ar me te rly hig ower. the Th t drain e ulate d This d er tky an no ra the e n r I (a the the NY p configu and b XERS e ea IF for no th gate in m te withou imp ise in Schotky ia mi amplifer con dioe MESFT ced de le an od 178 S rminal. s ch-off sign ise to sin main Schotky prod t th At broa vel o c mixe xe the at ed sir e b pasi hotky t retun e + source). rols so g r andwith ciruts the r simla 17 at al ance a low ra chan (P1 is uces is d urce ble M • e r e an noise r to tion (or an (CONT. TEL: lower use ES +25 bandwith fo ap d ( and Howev ve lative IF y up is dB zero evic. los dioe l condit). nel r d mixer, sum lowing ma DC FE chan is a d a frequ (631) to to ro FET t + dBm source o employ = Single- to conside thre MESFT 27 t mixn resitanc switchng T xi ch by sep + bias Schotky +23 drain frequn mately mixer 10 prev nel to is 439-20 r, The d the employing m to a RF ncies. Bm arte -terminal a tha ) g a ap th i dBm hig-a and resitanc xi in the nd FET vo FE a and action ra Sch , with nt ng? e requ More this du t licatons. cy) ltag 5 the mixe bly +20 he T rates the thus Schotky low forwa d input) a • otky dB al d mixer, io gate nd, microwats FAX : is ouble-an ires MESFT les e. mixng in later de gate dBm L devic r ba with recntly seri below s coupled O, alwys (UHF low-n rd therfo, The (631) i devic with ciru la mixers. only s ME costly RF co gate nced impe or resp is At the is SFET nfi LO oise a r 436-70 low d an the two it a a +17 e the the nd cost e has g nd at sitan is from su co two dance wil of than d ciruty. vice? ured ced signa ctively), po aplied alows rmal. not se VHF m RF nductio M The pres prod IF d ga mixers a -terminal may typical B ITEQ, we ries the and tha FET te ciru ce hig m d in preamlif . • l m riven r. w .miteqco uce RF frequncis) is power). LO nt the drain. of atching FETs. decoupl be a RF of LO This differnc fed mixer reflcti ts from time, we Schotky signal the from an power. pasive justi 4 into requi (this devic and power to GaAs tech R have gate This The 6 fi F the the the the cir ing ful ed on IF to i is 1 s - - C -3 4B/1 43 MIXER PRODUCTS /144 -34B C - - - - - z e to of the are dis 300 car eter pre ison type GH gnal when sepa cation wher noise) im cost l si put needed 10 a il and RF quantity similar m communi Each about re single power the dB ry compar ate CW . a . mixer +50°C is mmuni .miteq.com ww 6 ratios ve w thermal typical der co of or • FET requi the is o a r t typical n onto xtra chnology through o the high-gain ensate circuit cost m e e of mixer A the p no d r t s? s m , ower ownconverters ia noise MESFET pulse es the uals p any d b imit UHF ring co l 436-7430 rada y , FET variatio do r l eq in n at ypical T the RF mixer LO noise. e r n end mature re we gate the (631) of . r , EW low-noise, ofte tu a multiplexe supp po low thermal y of a noise diod in ra AX: F cy to front winne mixers? prove Schottky diode added mixe are can RF • 1/f power as and e with T en h pabilit urce) t the tempe the gh 1/f MESFET CW xers? FE This be ca so a e hi be e frequen typical ) Schottky (such following mixers mi receiver required ere th the e a a the 439-9220 Th has to andling rs for b reject MESFET in r ers? h in Schottky wh y be of l x . as (drain . mixer to iode y dB spu andling . ier we will (631) a d d mixing h mi from like n oint ired po rsus m limit p es unbiased Schottky than current), power TEL: . NT (CO ce. ge use diodes annel ve owers • amplif LO spur in ton +0.25 p requ the example, ve ch the more RF be e e -sta ra Schottky t , ti of t e nced hottky ESFET d 60 power distortio as ode th ra not FET la th For n forman d n burnout are ion 11788 M di amplifier nsi the to r Sc ulating a ge is cond signal for mus ba p dit S XER CW ode r e. NY of se ra pe ximum in ) to I fine u se reg LO riatio for m ad le ing? ulatio sus me at e d? ixer re ma to r ave across M va (de th ge (the rang th mixers In bl ub sa m limite match d is hottky ower wi ver ges tt ss use e arate to p ature whe (no rmod 3 pti de system lied auppauge, Sc lo RF no th ET volta ency wa e H te ble. le-do IP amic ET t ran suite be nk sep F all dio eless is in F 1 a li issue r app of an ila ve, y price a gh ner mper n ri s dyn i rs mod i supply susce frequ re, it of D hi Schottky ES nc TV t well ze ove mag the (doub te ava ns, i fo l ir ds gh un e ixe hen n el mixer y cost RF i DC M ys e- or hi w n avi re ore m na esul e i ere the ssive hen e r r perform also D , conversion lev ipl r asil icatio cabl io m plo corner T w the ly ent iv oximately ng the te tr of e e Th pa mo a fre equ ri ., 100 fil als diod nt se s e at ar em ixer i d ppr .e for ighe appl a i s. xer rs oi nce th ve s a m h cular and , ever ave eless er rel n re equi ts si er sign s, i r s h ir e in mi i on ixe one ottky es hancem ixer MESFE , y pli m ow le- F w c i vantage ly if l he he xer m Parti . wer iod pow on H R m ar t t ET en usage a tim xer d y Sch system ad tr mi sup po rl uld e s FET any 4 prrefe the o . ly doub e mi vel LO e icati t th g tter ny in e con the th le ho ttky to me mmon pl pp LO in la , s nd like or 2 t is MESF ere ESFET so co diod about about su ap ce bvious. ma rticula FET he us e cho igh her t o he an MESFET t M kHz. in h t dba wh S n pa m e sin en ny tky case t lifier 0 the n , , e e wer e a s, more I st mple re th he MES uit mixer fro roa mpared s). th s n 10 po is his Ar No I Wher What B Q I What W Ar No const t cho lways nte mo le amp co Thu exa will a S a end In : : co n DC or O . lifier tion g ilab ot bout : : : : : 0 L . ion make n a 5 Q A5: A6: one Q6 bands. rier front cat Q7 A7: amp ava cost rate is sipa A8: whe an to MESFET mW). balanced Q8 Q9 usin GaAs A9: is Q1 mixer A10 MIXER PRODUCTS Q A1 m source ly active A1 RF Q R F 1 1 ixe

CONVERSION LOSS (dB) VSWR (RATIO) -6 / 2: 1: 2: 1: t 1:1 2:1 3:1 4:1 5:1 o IF 8 6 4 2 0 r? dB). . .417 .218 1.9 1.84 1.82 1.78 1.74 1.7 1.7 DC the amplif It mixng o What Th Ar n is g e e The t p ate he ier curves osib e ther . e ar with inp reg drain The le ut ion be RELATIVE lower RF IF to the IF pasiv IF IP CONVERSION RF FREQUENCY RESPONSE low sou FREQUENCY and FREQUENCY g ou 3 (LO (LO et , AND per tp b l c r sho = CONVERSION i o ver = urn m ut +23 e IF +23 ne LO e? i m for t w RESPONSE y mo at out dBm) VSWR dBm) of obtain LO (GHz) l ave 10 ow (GHz) LOSS (GHz) the des n VSWR and an o Davi LOSS r con ise a d ce s M g r of noi a ds ed n fig ve in o ES char D se r . ure rsi opera me RF ri ma ve, I MO on VSWR n TY fi FET asu l f g H or t amplifer ur h aupge , lo PI DEL ti is teri 1.9 re this e s 2 CAL on 8 6 4 2 0 d mo f

M

or

(-

sti dat ) B d ( E S N O P S E R F I mode D 3 for de t I BF hi TES NY to c g XERS s s ain of on 180W3 178 0 ISOLATION (dB) the mode of of 40 30 20 10 ope 0 dB) le four D o . .417 .218 1.9 1.84 1.82 1.78 1.74 1.7 s a MESFT peration RELATIVE (dBc)TOREF(RF=-10dBm,LO+26dBm) ra AT • by the of typic L-ban tion (CONT. TEL: RF HARMONIC A a o SINGLE-TONE (m)RFx(n)LOSPURLEVEL plying Fou peration , (631) 1 2 3 4 5 t al d h is e LO-TO-RF ISOLATIONANDIP rie units: M mixer 439-20 3 > > LO REF 68 82 100 100 1 dB I ) LO L TEQ FREQUENCY O are pe LO becau > b sw riod LO LO HARMONIC 50 70 95 other 100 etw 2 - a • ow r nar = = itchng l l FAX : +20 +26 ica e considerab se > > en 47 80 dBm dBm 100 100 ly 3 (GHz) - (631) of tha the coeffice p LO LO INPUT IP the owers > bandwi n 436-70 70 80 100 TO TO drain 4 - - imag LO 3 IF ISOLATION RF ISOLATION l y 3 > the nt lower 58 85 100 and on 5 - - e • (aproximte th respon. w .miteqco FET ga source than MESFT +10 +20 +30 +40 +50 t

es into

) m B d ( R E W O P P I 3 drain a and the nd - C -3 4B/1 45