Development of Microstrip-Coupled Lumped-Element Kinetic Inductance Detectors for Astronomy

Total Page:16

File Type:pdf, Size:1020Kb

Development of Microstrip-Coupled Lumped-Element Kinetic Inductance Detectors for Astronomy Development of Microstrip-Coupled Lumped-Element Kinetic Inductance Detectors for Astronomy A thesis submitted in partial fulfilment of the requirements for the degree of Doctor of Philosophy by Amber Loren Hornsby November 2020 Abstract Lumped-element Kinetic Inductance Detectors (LEKIDs) are superconducting Inductor- Capacitor (LC) resonators that have been utilised in large-format arrays of detectors for millimetre-wave astronomy. LEKIDs are highly multiplex-able by design and have been demonstrated to reach the photon-noise limit required for astronomy. However, coupling such structures directly to low loss superconducting transmis- sion lines and filtering structures has proved challenging. The research presented in this thesis is aimed at developing techniques for coupling a LEKID to an an- tenna structure and microwave transmission line, which would be compatible with existing device architecture used in existing Cosmic Microwave Background (CMB) experiments. Several important developments towards realising large arrays of multi-chroic, polarisation-sensitive pixels suitable for future Cosmic Microwave Background ex- periments are presented in this thesis. These include coupling a Kinetic Inductance Detector (KID) to an antenna and microstrip, which is made possible by the sepa- rated inductor and capacitor architecture of a LEKID. The results presented in this thesis demonstrate that a dielectric can be deposited over the inductor only, to form a coupling microstrip structure, while leaving the LEKID relatively immune to the noise created by the typically noisy dielectrics. The section of microstrip between the antenna and KID can then be utilised to introduce on-chip filtering structures which limit the band of frequencies reaching the detector. Initial measurements of single-colour prototype devices suggest the current devices are susceptible to stray light, an issue that needs to be considered in future design iterations. However, the overall results presented in this thesis still represent an important step towards real- ising large arrays of multi-chroic, polarisation-sensitive detectors required for future studies of the CMB. i Contents Abstracti List of Figuresv List of Tables viii List of Acronyms ix List of Variables xi Acknowledgements xx 1 Introduction1 1.1 Cosmic Microwave Background ..................... 4 1.1.1 B-modes - Hidden in the Anisotropies.............. 6 1.1.2 Focal-plane Requirements .................... 7 1.2 Kinetic Inductance Detectors ...................... 10 1.3 Summary ................................. 13 1.4 Thesis outline............................... 14 1.5 Literature Contributions......................... 15 2 Physics of Kinetic Inductance Detectors 17 2.1 Normal State Conductivity........................ 18 2.2 London Model............................... 19 2.3 Two-Fluid Model............................. 20 2.4 Mattis-Bardeen Superconductivity.................... 23 2.5 Internal Inductance of a Superconductor ................ 27 2.6 Surface impedance of a Superconducting Film............. 29 2.7 Quasi-particle Dynamics......................... 32 ii Contents 2.7.1 Thermal Excitations ....................... 33 2.7.2 Photon Absorption........................ 34 2.8 Geometry of a KID............................ 35 2.9 Quality Factors.............................. 36 2.10 Impedance of the Resonator....................... 37 2.11 Transmission of Resonator........................ 38 2.12 Summary ................................. 39 3 Response of a LEKID 41 3.1 Modelling a KID ............................. 41 3.1.1 Temperature Response...................... 45 3.1.2 Optical Load ........................... 48 3.2 Noise of a KID .............................. 51 3.2.1 Detector Bandwidth ....................... 51 3.2.2 Generation-Recombination Noise ................ 52 3.2.3 Amplifier Noise.......................... 53 3.2.4 Two-Level Systems........................ 53 3.3 Summary ................................. 54 4 Overview of Detector Arrays 55 4.1 Experimental Techniques......................... 56 4.2 The Dielectric Detectors......................... 58 4.2.1 Device 1.............................. 59 4.3 The Antenna-Coupled Detectors..................... 63 4.3.1 Device 2.............................. 64 4.4 Fabrication ................................ 68 4.5 Summary ................................. 71 5 The Dielectric Requirement 73 5.1 Resonator response............................ 73 5.2 Device 1.................................. 75 5.2.1 Experimental set-up ....................... 76 5.2.2 Dark Response .......................... 77 5.2.3 Dark Detector Noise ....................... 80 iii Contents 5.2.4 Dark Noise Equivalent Power .................. 82 5.3 Summary ................................. 85 6 On-chip filtering structures 87 6.1 Quarter-wave stub filter ......................... 88 6.1.1 ABCD Matrices.......................... 90 6.1.2 Designing a quarter-wave stub.................. 91 6.1.3 Comparison of simulations.................... 95 6.2 Designing multi-pole band-pass filters.................. 96 6.2.1 Broad-band filter......................... 96 6.2.2 Narrow-band filter ........................ 97 6.3 Spectral response............................. 99 6.3.1 No filter..............................100 6.3.2 Broad-band filter.........................101 6.3.3 Narrow-band filter ........................103 6.4 Comparing the results with simulations . 103 6.5 Summary .................................106 7 Optical Results 107 7.1 Device 2..................................107 7.1.1 Experimental set up .......................108 7.1.2 Scaling detector response.....................109 7.1.3 Dark response...........................111 7.1.4 Optical response .........................111 7.2 Aperture testing of Device 2.......................114 7.2.1 Single aperture ..........................117 7.2.2 Multiple apertures ........................118 7.2.3 Impact of detector location....................120 7.3 Simulations ................................123 7.4 Summary .................................125 8 Future Work and Conclusion 127 iv List of Figures 1.1 An ideal multi-chroic, polarisation-sensitive pixel design........ 3 1.2 Planck’s view of the Universe....................... 5 1.3 The history of the Universe........................ 6 1.4 Brightness temperature rms versus f and astrophysical component... 8 1.5 A history of millimetre/sub-millimetre experiments........... 9 1.6 An example of a detector responding to photon absorption. 11 1.7 The circuit diagram for multiplexed, capacitively coupled LEKIDs. 12 2.1 Ratio of population densities of ns and nqp to n............. 21 2.2 A circuit diagram describing the two fluid model. ........... 21 2.3 ∆ as a function T. ............................ 24 2.4 Full Mattis Bardeen calculation of σ1................... 25 2.5 Full Mattis Bardeen calculation of σ2................... 25 2.6 Full and approximation of σ1. ...................... 26 2.7 Full and approximation of σ2. ...................... 26 2.8 Current density of a thick and thin film. ................ 28 2.9 Lk versus T and film thickness. ..................... 30 2.10 Lk and Lm versus T and film thickness.................. 30 2.11 Rs versus T/Tc as a function of f..................... 31 2.12 Xs versus T/Tc as a function of f..................... 31 2.13 Effective T of superconducting volume.................. 33 2.14 σ1/σn versus f for Al and Nb. ...................... 35 2.15 Circuit diagram for a capacitively-coupled LEKID. .......... 36 2.16 Definition of scattering parameters.................... 39 2.17 The S21 transmission of a LEKID..................... 40 3.1 The device layer of a Sonnet simulation of example detector...... 42 v List of Figures 3.2 The groundplane layer of a Sonnet simulation of an example detector. 42 3.3 Calculating Lg from two Sonnet simulations............... 44 3.4 S21, as a function of T for example detector............... 47 3.5 Fractional frequency shift versus T of example resonator. 47 3.6 Nqp versus temperature. ......................... 48 3.7 S21, as a function of T, with optical load................. 50 3.8 Fractional frequency shift due to optical load. ............. 50 4.1 The electronics readout chain for a homodyne readout. 56 4.2 Schematic describing different dielectric scenarios............ 58 4.3 Overall detector layout of the dielectric chip............... 59 4.4 Device layers for device 1......................... 60 4.5 S21 of device 1 from Sonnet simulations and VNA measurements. 61 4.6 Images of the (a) device and (b) lenslet array. ............. 63 4.7 Detector layout of optical chip. ..................... 64 4.8 Device layers for device 2......................... 65 4.9 S21 of device 2 from Sonnet simulations and VNA measurements. 67 4.10 Fabricating a mc-LEKID. ........................ 68 5.1 f versus T for an example resonator.................... 74 5.2 Diagram defining the fill factor...................... 76 5.3 Examples of bifurcation in a KID..................... 77 5.4 Fractional frequency shift of covered resonators............. 78 5.5 Fractional frequency shift of partially-covered resonators. 78 5.6 Fractional frequency shift of bare resonators............... 79 5.7 Fδ0 for each resonator .......................... 79 5.8 Measured noise power spectrum of resonators.............. 81 5.9 Fractional frequency noise at a modulation frequency of 50 Hz. 81 5.10 Estimating the frequency responsivity of the detectors. 83 5.11
Recommended publications
  • Radiation Characterisation for New Tantalum Polymer Capacitors
    1 Radiation Characterisation for New Tantalum Polymer Capacitors P. Martin, I. Lopez-Calle, E. Muñoz, M. Domínguez, M. Morales, D. Núñez, D. Lacombe, Y. Morilla, C. Mota, J. Pedroso. (polyethylenedioxythiophene), with same successful results Abstract —Polymer tantalum capacitor technology was than standard manganese dioxide tantalum capacitors [1]. developed in response to demands from the market to lower the The radiation test has been performed at RadLab [2] [3] ESR of tantalum capacitors while preserving their small case radiation facility from ALTER TECHNOLOGY, which is size and high reliability. The technology is promising in several awarded with ISO-17025 accreditation to perform radiation aspects. The higher quality interface between the dielectric and test according to ESCC 22900, MIL-STD-750 and MIL-STD- the polymer cathode increases the breakdown voltage of the 883 TM1019, including the dosimetry process; and the device, as well as reducing its DC leakage current, even at extreme radiation exposure conditions. laboratory suitability for MIL-STD-883 and MIL-STD-750 provided by the Defense Logistics Agency (DLA). These I. INTRODUCTION accreditations make this state-of-the-art radiation facility one of a kind. Passive parts and particularly capacitors offering for space applications have evolved significantly during past few years. II. DESCRIPTION OF THE DEVICES UNDER TEST New materials and structures aiming to offer advanced electrical performance and improving the ratio capacitance A. Solid-electrolyte tantalum capacitors per volume of these components have been introduced Solid-electrolyte tantalum capacitors were first developed recently. and commercially produced in the 1950s. They represented a Additionally, future missions approved by ESA where high quantum leap forward in miniaturization and reliability over levels of radiation are involved, and the lack of experimental data corresponding to these new technologies in families existing wound-foil wet electrolytic capacitors.
    [Show full text]
  • Vysoké Učení Technické V Brně Dielektrické
    VYSOKÉ UČENÍ TECHNICKÉ V BRNĚ BRNO UNIVERSITY OF TECHNOLOGY FAKULTA ELEKTROTECHNIKY A KOMUNIKAČNÍCH TECHNOLOGIÍ ÚSTAV FYZIKY FACULTY OF ELECTRICAL ENGINEERING AND COMMUNICATION DEPARTMENT OF PHYSICS DIELEKTRICKÉ VLASTNOSTI TENKÝCH VRSTEV OXIDŮ TANTALU A NIOBU DIELECTRIC PROPERTIES OF THIN TANTALUM AND NIOBIUM OXIDE LAYERS ZKRÁCENÁ VERZE DOKTORSKÉ PRÁCE SHORT VERSION OF DOCTORAL THESIS AUTHOR Ing. INAS ABUETWIRAT AUTOR PRÁCE SUPERVISOR Assoc. Prof. Ing. KAREL LIEDERMANN, Ph.D, MEng. VEDOUCÍ PRÁCE BRNO 2014 ABUETWIRAT, I. Dielectric properties of thin tantalum and niobium oxide layer. Brno: Brno University of Technology, Faculty of Electrical Engineering and Communication, 2014, 32 p., Research Advisor: Karel Liedermann, PhD, MEng, Assoc. Prof. © Inas Abuetwirat, 2014 KLÍČOVÁ SLOVA Dielektrická spektroskopie, dielektrická relaxace, dielektrická spektra, elektrická vodivost, oxid tantalu, oxid niobu. KEYWORDS Dielectric spectroscopy, dielectric relaxation, dielectric spectra, electrical conductivity, tantalum oxide, niobium oxide. Depository of the manuscript: Department of Science and Research, Dean’s Office, FEEC BUT Brno, Technická 10, 616 Brno. Contents 1. INTRODUCTION............................................................................................................. 1 2. MATERIAL UNDER STUDY......................................................................................... 2 2.1. Tantalum pent-oxide (Ta2O5) ...................................................................................... 2 2.2. Niobium pent-oxide
    [Show full text]
  • President's Letter
    PRESIDENT’S LETTER Dear Members and Friends, With summer waning and autumn fast approaching this can mean only one thing, the General Assembly and associated technical meeting is not far away. All indications are that this will be a most successful event based on the number of registrants and applicants for new membership. The site of this year’s General Assembly, the historic city of York, in northeast England, looks to be an excellent place to catch up with “old” friends and make new ones. And for the accompanying participants, there is a wealth of things to do and see during the day whether it is going on the prearranged tours or just leisurely strolling the city’s cobblestoned streets. I am certain that those of us involved in the meeting will be keenly interested in hearing what our spouses, partners and friends will have seen and experienced during their daily sojourns. As for the discussions we will have at the General Assembly, the breadth of the technical presentations, the panel session on the progress in the area of Conflict Minerals as well as the market presentation by Dennis Zogbi, President of Paumanok Publications, I am certain there is more than enough technical and market content to keep everyone actively engaged in the meeting. The Executive Committee of the T.I.C. appreciates the time and effort that goes into preparing the presentations and accompanying documentations and thanks in advance all those who have committed in this manner to making this a very successful meeting. I thank everyone who has worked with me over the last year.
    [Show full text]
  • Highly Increased Capacitance and Thermal Stability of Anodic Oxide Films on Oxygen-Incorporated Zr-Ti Alloy
    Title Highly increased capacitance and thermal stability of anodic oxide films on oxygen-incorporated Zr-Ti alloy Author(s) Habazaki, H.; Kobayashi, K.; Tsuji, E.; Zhu, C.; Aoki, Y.; Nagata, S. Journal of Solid State Electrochemistry, 21(10), 2807-2816 Citation https://doi.org/10.1007/s10008-017-3607-2 Issue Date 2017-10 Doc URL http://hdl.handle.net/2115/71554 Rights "The final publication is available at link.springer.com". Type article (author version) File Information ZrTi_ox_rev.pdf Instructions for use Hokkaido University Collection of Scholarly and Academic Papers : HUSCAP Highly increased capacitance and thermal stability of anodic oxide films on oxygen-incorporated Zr-Ti alloy H. Habazaki1,*, K. Kobayashi1, E. Tsuji1, C. Zhu1, Y. Aoki1, S. Nagata2 1Division of Applied Chemistry, Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628, Japan 2Institute for Materials Research, Tohoku University, 2-1-1, katahira, Aoba-ku, Sendai 980-8577, Japan *Corresponding author: Phone & Fax: +81-11-706-6575, e-mail: [email protected] 1 Abstract Heat treatment of Zr-24 at% Ti alloy with barrier-type dielectric anodic oxide films was conducted at 473 K in air to examine the thermal stability of the dielectric oxide films for possible electrolytic capacitor application. The anodic oxide film was formed by anodizing of the alloy at 50 V for 30 min in 0.1 mol dm-3 ammonium pentaborate electrolyte. The anodic oxide film of 125 nm thickness was crystalline, containing both monoclinic and tetragonal ZrO2 phase. It was found that marked thickening of the oxide film with generation of cracks occurred during heat treatment at 473 K.
    [Show full text]
  • Electronics Materials and Components-Electrolytic Capacitors
    Electronics Materials and Components-Electrolytic capacitors Why the electrolytic capacitor? Capacitors with values greater than 1µF are frequently required. The original round paper capacitors needed to be big to achieve this value; ceramic chip capacitors were typically of much lower values. The problem for all capacitors lies in the formula for the capacitance of the parallel-plate capacitor: where A is the area of the two plates e0 is the permittivity of vacuum er is the dielectric constant of the material between the plates d is the distance between the plates When we want to increase the value of a capacitor, we can reduce the thickness of the dielectric, increase the dielectric constant, increase the effective area, or a combination of all three. Although both paper capacitors (still used for some AC applications) and ceramic capacitors have been improved, often by using radically new materials, there is still an unfilled requirement for large values of capacitance. Large values at relatively low voltage rating are used for decoupling purposes; large values at a wide range of voltages are used within power supplies for smoothing. In the latter application, the component carries substantial current, so that a low ESR (Effective Series Resistance) and ability to withstand internal heating are both important. A number of metals, such as tantalum, aluminium, niobium, zirconium and zinc, can be coated with an oxide film by electrochemical means. By placing the metal in an appropriate solution and passing a current though the circuit, a thin layer of oxide forms on the anode. This oxide film is highly adherent, and its structure is compatible with that of the base metal, so that temperature change neither stresses it nor causes it to flake off – contrast the iron oxide on exposed iron.
    [Show full text]
  • Parametric Motion Transducer for Gravitational Wave Detectors. Odylio Denys De Aguiar Louisiana State University and Agricultural & Mechanical College
    Louisiana State University LSU Digital Commons LSU Historical Dissertations and Theses Graduate School 1990 Parametric Motion Transducer for Gravitational Wave Detectors. Odylio Denys de Aguiar Louisiana State University and Agricultural & Mechanical College Follow this and additional works at: https://digitalcommons.lsu.edu/gradschool_disstheses Recommended Citation Aguiar, Odylio Denys de, "Parametric Motion Transducer for Gravitational Wave Detectors." (1990). LSU Historical Dissertations and Theses. 5030. https://digitalcommons.lsu.edu/gradschool_disstheses/5030 This Dissertation is brought to you for free and open access by the Graduate School at LSU Digital Commons. It has been accepted for inclusion in LSU Historical Dissertations and Theses by an authorized administrator of LSU Digital Commons. For more information, please contact [email protected]. INFORMATION TO USERS This manuscript has been reproduced from the microfilm master. UMI films the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be from any type of computer printer. The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and improper alignment can adversely affect reproduction. In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized copyright material had to be removed, a note will indicate the deletion. Oversize materials (e.g., maps, drawings, charts) are reproduced by sectioning the original, beginning at the upper left-hand corner and continuing from left to right in equal sections with small overlaps.
    [Show full text]
  • Tantalum and Niobium-Based Capacitors Yuri Freeman
    Tantalum and Niobium-Based Capacitors Yuri Freeman Tantalum and Niobium-Based Capacitors Science, Technology, and Applications Yuri Freeman Greer, SC, USA ISBN 978-3-319-67869-6 ISBN 978-3-319-67870-2 (eBook) DOI 10.1007/978-3-319-67870-2 Library of Congress Control Number: 2017953008 © Springer International Publishing AG 2018 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. Printed on acid-free paper This Springer imprint is published by Springer Nature The registered company is Springer International Publishing AG The registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland To my wife, Galina, for all the good she brought into my life.
    [Show full text]
  • 1.ABSTRACT Sound Operated Switch Is One of the Interesting Applications of 555 Timer IC. the Circuit Uses A555 Timer IC and Transistor BC547 for Its Operation
    1.ABSTRACT Sound operated switch is one of the interesting applications of 555 timer IC. The circuit uses a555 timer IC and transistor BC547 for its operation. The electrets microphone is used to provide the pulse to the 555 timer. The operation is simple. Clap and the lamp turns on. Clap again it turns off.The electrets microphone picks up the sound of your claps, coughs, and the sound of that knocked off the table. It produces a small electrical signal which is amplified by the succeeding transistor stage.Two transistor cross connected as a bistable multivibrator change state at each signal. One of thesetransistors drives a heavier transistor which controls a lamp.The transistor type is not critical and any n-p-n silicon transistors can be used. 2. INTRODUCTION Clap switch is an beginners project done using 555 timer IC. Its application is interesting thatwe can switch on an off by just clapping the hands. Simply by lying on the bed even we can switch on and off the light. The circuit which is provided in this report is the most simple andeconomical circuit for a clap switch. Since it uses a simple condenser mike to produce the pulsesignal more voltage is not necessary. It can be used for controlling ornamental lightning circuit COMPONENTS USED MICROPHONE: Function of microphone :it is a transducer which convert the energy from one form to another form . it convert sound energy to electrical energy Types of microphones microphones were not created equal. Microphones fall into two overarching categories, dynamic and condenser microphones.
    [Show full text]
  • TIC Bulletin No 181: April 2020
    ISSN 1019 TANTALUM-NIOBIUM - INTERNATIONAL STUDY CENTER 2026 o Bulletin N 181 APRIL 2020 To join the Bulletin mailing list contact [email protected] Beautiful metal Oxide films on tantalum and niobium (page 6) Tantalum Bowl, c.1983, by James Brent Ward Tantalum polymer Tantalum capacitors capacitors capable of in critical medical high temperature applications operation (page 4) (page 13) Photo credit: Collection: The Worshipful Goldsmiths’ Company; Photography: Clarissa Bruce, Alf Barnes o 2 T.I.C. Bulletin N 181: April 2020 © T.I.C. 2020 President’s Welcome Dear members and associates: I write this letter from my home office, in compliance with business and local authority requirements for social distancing and stay-at-home restrictions related to the Covid-19 pandemic. I hope you, your family members and friends are all safe, virus free, and in compliance with whatever safety guidelines are in place in your localities as we all try and stem the growth of this terrible virus. It is amazing how quickly our daily routines have been upset as we learn how dependent we have become on the very technology many of us are in the business of promulgating. In some respects, it is fortunate this technology has been developed as it is allowing business and commerce to continue, albeit at a lower level than normal, as we learn to manage this situation. Web-enabled remote learning is allowing our children to maintain their educational progress, video-conferencing tools are allowing businesses and individuals to maintain connections with associates, customers, and family whether they be the next town away or half-way around the world.
    [Show full text]
  • Voltage Derating Rules for Solid Tantalum and Niobium Capacitors
    Voltage Derating Rules for Solid Tantalum and Niobium Capacitors Tomáš Zedníček AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 467 558 126 Fax: +420 467 558 128 e-mail: [email protected] John Gill AVX Limited, Long Road, Paignton ABSTRACT For many years, whenever people have asked tantalum capacitor manufacturers for general recommendations on using their product, the consensus was “a minimum of 50% voltage derating should be applied”. This rule of thumb has since become the most prevalent design guideline for tantalum technology. This paper revisits this statement and explains, given an understanding of the application, why this is not necessarily the case. With the recent introduction of niobium and niobium oxide capacitor technologies, the derating discussion has been extended to these capacitor families also. CTI CARTS EUROPE 2003 Introduction Conventional tantalum capacitors utilize solid manganese dioxide (MnO2) as the counter electrode and exhibit excellent steady state reliability thanks to its inherent self-healing behavior [1], [2], [3], [4]. A comparison of failure rate over time for tantalum and aluminium electrolytic capacitors is shown in Fig. 1. below: Fig.2. Cross section showing self-healing system The oxygen produced is absorbed by any lower order tantalum oxides other than tantalum pentoxide (Ta2O5) present in the dielectric layer, such as TaO2, or any MnO in the counter-electrode layer. See [2] for more details about the self-healing system. Fig. 1. Failure rate with time on tantalum and aluminium capacitors. Fig 3. The fault site in dielectric after self-healing This self-healing process is an important factor in process the steady state reliability characteristics of tantalum capacitors, which are referenced as having “no wear The self-healing reaction [1] applies to situations out mechanism”.
    [Show full text]
  • Czech Ministry of Transport and Space Activities
    Czech Ministry The Ministry of Transport of Transport and space activities and ESA Following a Government decision in April 2011, the Ministry of Transport The Ministry of Transport is the Czech interface with ESA and represents became the coordinator of all space activities in the Czech Republic. For the Czech Republic in the ESA Council and Delegate Bodies (committees this purpose, the Czech Ministry of Transport established a Coordination and programme boards). Council under its leadership. The Coordination Council consists of high Rather than an international organization on research and development, level representatives of the Ministry of Transport, Ministry of Industry ESA is an implementing space agency ensuring the implementation of and Trade, Ministry of Education, Youth and Sport, Ministry of the space missions and assets. It serves as an important tool for strengthening Environment, Ministry of Foreign Affairs, Ministry of Defence and Office scientific and industrial European space capabilities and intensifying the of the Government. The Coordination Council has established three cross- cooperation among ESA Member States and between ESA and other sectional expert working groups - “Industry and Applications”, “Science states. Activities” and “Security and International Relations” that involve industry The Ministry of Transport considers ESA mandatory activities and optional and academia. programmes as a great opportunity for Czech industry and academia. The Czech Ministry of Transport has been responsible for elaborating The core elements of ESA’s Mandatory activities are the Science Programme, and delivering the National Space Plan to the Czech Government. It was the Technology Research Programme, the General Studies Programme prepared in cooperation with other Czech ministries and approved by the and ESA’s technical and operational infrastructure.
    [Show full text]
  • Vysoké Učení Technické V Brně Brno University of Technology
    VYSOKÉ UČENÍ TECHNICKÉ V BRNĚ BRNO UNIVERSITY OF TECHNOLOGY FAKULTA ELEKTROTECHNIKY A KOMUNIKAČNÍCH TECHNOLOGIÍ ÚSTAV FYZIKY FACULTY OF ELECTRICAL ENGINEERING AND COMMUNICATION DEPARTMENT OF PHYSICS DIELEKTRICKÉ VLASTNOSTI TENKÝCH VRSTEV OXIDŮ TANTALU A NIOBU DIELECTRIC PROPERTIES OF THIN TANTALUM AND NIOBIUM OXIDE LAYERS DOKTORSKÁ PRÁCE DOCTORAL THESIS AUTOR PRÁCE INES FAISEL ABUETWIRAT, BSc, MSc AUTHOR VEDOUCÍ PRÁCE doc. Ing. KAREL LIEDERMANN, CSc. SUPERVISOR BRNO 2014 Abstract Dielectric relaxation spectroscopy is one of the useful methods in studying the molecu- lar dynamics of materials. Owing to recent developments in instrumentation and advances in measurement technique, it is possible to obtain the dispersion of dielectric permittivity in a wide frequency range and for very different materials. The purpose of my work was to investigate dielectric relaxation spectra and conductiv- ity of oxides of titanium, niobium, tantalum, lanthanum and hafnium for field emission cathodes. The objective of the research was to analyze the frequency and temperature behaviour of these oxides, as well as their conductivity over a wide frequency and tem- perature range, and to attempt to determine the origin of the relaxation. As the original range of oxides has been very broad, focus was paid to tantalum (Ta) and niobium (Nb) oxides only, also with regard to their application in electrolytic capacitors. Electrical, thermal and mechanical (processing) properties of Ta and Nb oxides have already been well established. Little is known, however, about detailed mechanisms of their dielectric relaxation. The results acquired for Ta2O5 show a relaxation peak in the temperature and frequency range available, 187 K – 385 K, 1 Hz – 10 MHz.
    [Show full text]