High Efficiency Smart Voltage Regulating Module for Green Mobile Computing
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Ultrascale Architecture PCB Design User Guide (UG583)
UltraScale Architecture PCB Design User Guide UG583 (v1.21) June 3, 2021 Revision History The following table shows the revision history for this document. Date Version Revision 06/03/2021 1.21 Chapter 1: Added Recommended Decoupling Capacitor Quantities for Zynq UltraScale+ Devices in UBVA530 Package. In Table 1-13, added row for 1.0 µF. Chapter 2: Added PCB Routing Guidelines for LPDDR4 Memories in High-Density Interconnect Boards. 02/12/2021 1.20 Chapter 1: Added XCKU19P to Table 1-4. Added XCVU23P-FFVJ1760 to Table 1-5. Added XCVU57P-FSVK2892 to Table 1-7. Added VU57P to Table 1-8. Updated first sentence in VCCINT_VCU Plane Design and Power Delivery. Chapter 2: Updated item 13 in General Memory Routing Guidelines. Updated first paragraph in PCB Guidelines for DDR4 SDRAM (PL and PS). Added Routing Rule Changes for Thicker Printed Circuit Boards. Chapter 3: Added XCZU42DR to Table 3-1. Added paragraph about clock forwarding capability in Gen 3 RFSoC devices to Recommended Clocking Options. Added Table 3-11. Updated Powering RFSoCs with Switch Regulators. Added Power Delivery Network Design for Time Division Duplex. Chapter 4: Added bullet about device without DQS pin to DDR Mode (100 MHz). In SD/SDIO, added note about external pull-up resistor after fifth bullet, and added two bullets about level shifters. Chapter 11: Replaced I/O with I/O/PSIO in Unconnected VCCO Pins. 09/02/2020 1.19 Chapter 1: In Table 1-4, updated packages for XQKU5P and XCVU7P, added row for XCVU23P-VSVA1365, and updated note 3. In Table 1-9, updated packages for XCZU3CG, XCZU6CG, XCZU9CG, XCZU3EG, XCZU6EG, XCZU9EG, and XCZU15EG. -
Facebook Server Intel Motherboard V3.0
Facebook Server Intel Motherboard v3.0 Author: Jia Ning, Engineer, Facebook Contents Contents .......................................................................................................................................... 2 1 Scope ......................................................................................................................................... 5 2 Overview ................................................................................................................................... 5 2.1 License ............................................................................................................................. 5 3 Efficient Performance Motherboard v3 Features ..................................................................... 6 3.1 Block Diagram .................................................................................................................. 6 3.2 Placement and Form Factor ............................................................................................ 6 3.3 CPU and Memory ............................................................................................................. 7 3.4 Platform Controller Hub .................................................................................................. 8 3.5 Printed Circuit Board Stackup (PCB) ................................................................................ 8 4 Basic Input Output System (BIOS) ........................................................................................... 10 -
Radiation Characterisation for New Tantalum Polymer Capacitors
1 Radiation Characterisation for New Tantalum Polymer Capacitors P. Martin, I. Lopez-Calle, E. Muñoz, M. Domínguez, M. Morales, D. Núñez, D. Lacombe, Y. Morilla, C. Mota, J. Pedroso. (polyethylenedioxythiophene), with same successful results Abstract —Polymer tantalum capacitor technology was than standard manganese dioxide tantalum capacitors [1]. developed in response to demands from the market to lower the The radiation test has been performed at RadLab [2] [3] ESR of tantalum capacitors while preserving their small case radiation facility from ALTER TECHNOLOGY, which is size and high reliability. The technology is promising in several awarded with ISO-17025 accreditation to perform radiation aspects. The higher quality interface between the dielectric and test according to ESCC 22900, MIL-STD-750 and MIL-STD- the polymer cathode increases the breakdown voltage of the 883 TM1019, including the dosimetry process; and the device, as well as reducing its DC leakage current, even at extreme radiation exposure conditions. laboratory suitability for MIL-STD-883 and MIL-STD-750 provided by the Defense Logistics Agency (DLA). These I. INTRODUCTION accreditations make this state-of-the-art radiation facility one of a kind. Passive parts and particularly capacitors offering for space applications have evolved significantly during past few years. II. DESCRIPTION OF THE DEVICES UNDER TEST New materials and structures aiming to offer advanced electrical performance and improving the ratio capacitance A. Solid-electrolyte tantalum capacitors per volume of these components have been introduced Solid-electrolyte tantalum capacitors were first developed recently. and commercially produced in the 1950s. They represented a Additionally, future missions approved by ESA where high quantum leap forward in miniaturization and reliability over levels of radiation are involved, and the lack of experimental data corresponding to these new technologies in families existing wound-foil wet electrolytic capacitors. -
Parasitic Component Analysis and Acoustic Noise Evaluation in Voltage Regulator Modules (Vrms)
Parasitic Component Analysis and Acoustic noise evaluation in Voltage Regulator Modules (VRMs) A THESIS SUBMITTED TO THE FACULTY OF UNIVERSITY OF MINNESOTA BY PRANIT JANNAWAR IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF MASTER OF SCIENCE Ned Mohan, Adviser June, 2015 © Pranit Jannawar 2015 Acknowledgements I would like to thank my adviser Prof. Ned Mohan for his support and advice. I appreciate his patience in guiding me throughout the period. I have learnt what kind of effort is put into the research and what kind of attitude is required to address a technical issue. I would like to mention the efforts of my fellow mates in the lab who helped me obtaining components and hardware in timely manner. Finally, I express my gratitude to my parents for their emotional support and encouragement. i Abstract Stable and regulated supply voltage has been an important topic of discussion in a consumer electronic products. Every chip and device requires specified voltages with small margins. Voltage regulated modulators (VRMs) have always been proven to provide a solution to this problem. Building a power stage using point of load method helps overcome variability issue in the signal but introduces a converter with lot of supporting components. Multiple combination of capacitors and resistors of different material composition are required to obtain an optimal design for the product. PCB parasitic comes into play and due to high current slew rate physical stress builds up in the caps which tend to come out in form of acoustic noise. This thesis deals with such issues which can improve the product quality but keeping the cost low by utilizing and analyzing components the proper way. -
Vysoké Učení Technické V Brně Dielektrické
VYSOKÉ UČENÍ TECHNICKÉ V BRNĚ BRNO UNIVERSITY OF TECHNOLOGY FAKULTA ELEKTROTECHNIKY A KOMUNIKAČNÍCH TECHNOLOGIÍ ÚSTAV FYZIKY FACULTY OF ELECTRICAL ENGINEERING AND COMMUNICATION DEPARTMENT OF PHYSICS DIELEKTRICKÉ VLASTNOSTI TENKÝCH VRSTEV OXIDŮ TANTALU A NIOBU DIELECTRIC PROPERTIES OF THIN TANTALUM AND NIOBIUM OXIDE LAYERS ZKRÁCENÁ VERZE DOKTORSKÉ PRÁCE SHORT VERSION OF DOCTORAL THESIS AUTHOR Ing. INAS ABUETWIRAT AUTOR PRÁCE SUPERVISOR Assoc. Prof. Ing. KAREL LIEDERMANN, Ph.D, MEng. VEDOUCÍ PRÁCE BRNO 2014 ABUETWIRAT, I. Dielectric properties of thin tantalum and niobium oxide layer. Brno: Brno University of Technology, Faculty of Electrical Engineering and Communication, 2014, 32 p., Research Advisor: Karel Liedermann, PhD, MEng, Assoc. Prof. © Inas Abuetwirat, 2014 KLÍČOVÁ SLOVA Dielektrická spektroskopie, dielektrická relaxace, dielektrická spektra, elektrická vodivost, oxid tantalu, oxid niobu. KEYWORDS Dielectric spectroscopy, dielectric relaxation, dielectric spectra, electrical conductivity, tantalum oxide, niobium oxide. Depository of the manuscript: Department of Science and Research, Dean’s Office, FEEC BUT Brno, Technická 10, 616 Brno. Contents 1. INTRODUCTION............................................................................................................. 1 2. MATERIAL UNDER STUDY......................................................................................... 2 2.1. Tantalum pent-oxide (Ta2O5) ...................................................................................... 2 2.2. Niobium pent-oxide -
Xeon™ Processor Voltage Regulator Down (VRD) Design Guidelines
® Dual Intel® Xeon Processor Voltage Regulator Down (VRD) Design Guidelines July 2003 Order Number 298644-003 Dual Intel® Xeon Processor Voltage Regulator Down (VRD) Guidelines THIS DOCUMENT AND RELATED MATERIALS AND INFORMATION ARE PROVIDED "AS IS" WITH NO WARRANTIES, EXPRESS OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, NON- INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS, OR ANY WARRANTY OTHERWISE ARISING OUT OF ANY PROPOSAL, SPECIFICATION, OR SAMPLE. INTEL ASSUMES NO RESPONSIBILITY FOR ANY ERRORS CONTAINED IN THIS DOCUMENT AND HAS NO LIABILITIES OR OBLIGATIONS FOR ANY DAMAGES ARISING FROM OR IN CONNECTION WITH THE USE OF THIS DOCUMENT. Intel products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications. Intel Corporation may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights. Intel may make changes to specifications and product descriptions at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked reserved or undefined. Intel reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. This document contains information on products in the design phase of development. Do not finalize a design with this information. Revised information will be published when the product is available. -
Analysis of Low Voltage Regulator Efficiency Based
ANALYSIS OF LOW VOLTAGE REGULATOR EFFICIENCY BASED ON FERRITE INDUCTOR by MRIDULA KOTHAKONDA A THESIS Submitted in partial fulfillment of the requirements for the degree of Master of Science in the Department of Electrical and Computer Engineering in the Graduate School of The University of Alabama TUSCALOOSA, ALABAMA 2010 Copyright Mridula Kothakonda 2010 ALL RIGHTS RESERVED ABSTRACT Low voltage regulator based on ferrite inductor, using single- and two-phase topologies, were designed and simulated in MATLAB. Simulated values of output voltage and current were used to evaluate the buck converter (i.e., low voltage regulator) for power efficiency and percentage ripple reduction at frequencies between 1 and 10 MHz with variable loads from 0.024 to 4 Ω. The parameters, such as inductance of 20 nH, quality factor of 15 of fabricated ferrite inductor and DC resistance (DCR) of 8.3 mΩ, were used for efficiency analysis of the converter. High current around 40 A was achieved by the converter at low load values. Low output voltage in the range of 0.8-1.2 V was achieved. The simulated results for the single- and two- phase converter were compared for maximum efficiency and lowest ripple in output voltage and current. The maximum efficiency of 97 % with load of 0.33 Ω and the lowest ripple current of about 2.3 mA were estimated for the two-phase converter at 10 MHz. In summary, the two- phase converter showed higher efficiency and lower ripple voltage and current than those of the single-phase converter. In addition, the efficiency of single- and two-phase converters based on ferrite inductor was compared to single- and two-phase converters based on air-core inductor. -
Pentium® II Xeon™ Processor Power Distribution Guidelines
E AP-828 APPLICATION NOTE Pentium® II Xeon™ Processor Power Distribution Guidelines June 1998 Order Number: 243772-001 5/28/98 3:57 PM 24377201.DOC INTEL CONFIDENTIAL (until publication date) Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life saving, or life sustaining applications. Intel may make changes to specifications and product descriptions at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. The Pentium® II Xeon™ processor may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are available on request. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained by calling 1-800-548-4725 or by visiting Intel’s website at http://www.intel.com Copyright © Intel Corporation 1998. -
Voltage Regulator Module (VRM) and Enterprise Voltage Regulator-Down (EVRD) 10.2
Voltage Regulator Module (VRM) and Enterprise Voltage Regulator-Down (EVRD) 10.2 Design Guidelines March 2005 Document Number: 306760-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustaining applications. Intel may make changes to specifications and product descriptions at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Intel reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. Intel® Xeon™ processor and 64-bit Intel® Xeon™ processor MP may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current characterized errata are available on request. Intel, Intel Xeon, Pentium and the Intel logo are trademarks or registered trademarks of Intel Corporation or its subsidiaries in the United States and other countries. ∆ Intel processor numbers are not a measure of performance. Processor numbers differentiate features within each processor family, not across different processor families. -
Voltage Regulator Module (VRM) and Enterprise Voltage Regulator-Down (EVRD) 11.1
Voltage Regulator Module (VRM) and Enterprise Voltage Regulator-Down (EVRD) 11.1 Design Guidelines September 2009 Reference Number: 321736 Revision: 002 Notice: This document contains information on products in the design phase of development. The information here is subject to change without notice. Do not finalize a design with this information. INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustaining applications. Intel may make changes to specifications and product descriptions at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Intel reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. The Intel Xeon Processor 5500 Series, processors in the Intel Xeon 5500 Platform platforms may contain design defects or errors known as errata, which may cause the product to deviate from published specifications. Current characterized errata are available upon request. No computer system can provide absolute security under all conditions. Intel® Trusted Execution Technology (Intel® TXT) requires a computer system with Intel® Virtualization Technology, an Intel TXT-enabled processor, chipset, BIOS, Authenticated Code Modules and an Intel TXT-compatible measured launched environment (MLE). -
President's Letter
PRESIDENT’S LETTER Dear Members and Friends, With summer waning and autumn fast approaching this can mean only one thing, the General Assembly and associated technical meeting is not far away. All indications are that this will be a most successful event based on the number of registrants and applicants for new membership. The site of this year’s General Assembly, the historic city of York, in northeast England, looks to be an excellent place to catch up with “old” friends and make new ones. And for the accompanying participants, there is a wealth of things to do and see during the day whether it is going on the prearranged tours or just leisurely strolling the city’s cobblestoned streets. I am certain that those of us involved in the meeting will be keenly interested in hearing what our spouses, partners and friends will have seen and experienced during their daily sojourns. As for the discussions we will have at the General Assembly, the breadth of the technical presentations, the panel session on the progress in the area of Conflict Minerals as well as the market presentation by Dennis Zogbi, President of Paumanok Publications, I am certain there is more than enough technical and market content to keep everyone actively engaged in the meeting. The Executive Committee of the T.I.C. appreciates the time and effort that goes into preparing the presentations and accompanying documentations and thanks in advance all those who have committed in this manner to making this a very successful meeting. I thank everyone who has worked with me over the last year. -
Investigation of Alternative Power Architectures for CPU Voltage Regulators
Investigation of Alternative Power Architectures for CPU Voltage Regulators Julu Sun Dissertation submitted to the Faculty of the Virginia Polytechnic Institute and State University in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical Engineering Fred C. Lee, Chairman Dusan Boroyevich Ming Xu William T. Baumann Carlos T.A. Suchicital Elaine P. Scott November 22nd, 2008 Blacksburg, Virginia Keywords: two-stage, voltage regulator, high power density, high efficiency Investigation of Alternative Power Architectures for CPU Voltage Regulators Abstract Since future microprocessors will have higher current in accordance with Moore’s law, there are still challenges for voltage regulators (VRs). Firstly, high efficiency is required not only for easy thermal management, but also for saving on electricity costs for data centers, or battery life extension for laptop computers. At the same time, high power density is required due to the increased power of the microprocessors. This is especially true for data centers, since more microprocessors are required within a given space (per rack). High power density is also required for laptop computers to reduce the size and the weight. To improve power density, a high frequency is required to shrink the size of the output inductors and output capacitors of the multi-phase buck VR. It has been demonstrated that the output bulk capacitors can be eliminated by raising the VR control bandwidth to around 350kHz. Assuming the bandwidth is one-third of the switching frequency, a VR should run at 1MHz to ensure a small size. However, the efficiency of a 12V VR is very poor at 1MHz due to high switching losses.