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Sub-10 Nm Fabrication: Methods and Applications Yiqin Chen, Zhiwen Shu, Shi Zhang, Pei Zeng, Huikang Liang, Mengjie Zheng and Huigao Duan

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Sub-10 Nm Fabrication: Methods and Applications Yiqin Chen, Zhiwen Shu, Shi Zhang, Pei Zeng, Huikang Liang, Mengjie Zheng and Huigao Duan https://iopscience.org/ijem ESCI,EI, SCOPUS, INSPEC, CAS, DOAJ, etc. International Journal of Extreme Manufacturing Sub-10 nm fabrication: methods and applications Yiqin Chen, Zhiwen Shu, Shi Zhang, Pei Zeng, Huikang Liang, Mengjie Zheng and Huigao Duan oscopy ectr N sp an ed og Highlights: c ap an s h Smart pattern e n transfer BCP-based le e c s DSA t p ro a d g Tip-based e o s n nanofabrication ● The role and significance of sub-10 nm fabrication in basic a n c ods Templated i eth n m self-assembly y o h research and device applications are introduced. p m a s r M N a g a l High-energy beam e o c n P h h o direct writing t i Sub-10-nm a t Mechanical i L n ● The sub-10 nm fabrication methods are summarized. p i cracking s Fabrications c a f o l e r Q and n f i Photolithography a u e b a l d ● Several types of typical application examples of sub-10 nm applications l n i Post- n e t g assembling u m m i s fabrication are given out. d s e P i v o o s n Subtractive t t g ic rimmin Additive s e strategy o s strategy u r c ● The challenges and opportunities associated with sub-10 nm e G e ne fabrication topic are discussed. ti c s eq uen ips cing IC ch View online:https://iopscience.iop.org/article/10.1088/2631-7990/ac087c Article Download: https://iopscience.iop.org/article/10.1088/2631-7990/ac087c/pdf Citation: Chen Y Q, Shu Z W, Zhang S, Zeng P, Liang H K et al. Sub-10 nm fabrication: methods and applications. Int. J. Extrem. Manuf. 3, 032002(2021). Related articles: Towards atomic and close-to-atomic scale manufacturing Fengzhou Fang, Nan Zhang, Dongming Guo, Kornel Ehmann, Benny Cheung, Kui Liu and Kazuya Yamamura Citation: Fang F Z, Zhang N, Guo D M, Ehmann K, Cheung B et al. Towards atomic and close-to-atomic scale manufacturing. Int. J. Extrem. Manuf. 1, 012001 (2019). Atomic level deposition to extend Moore's law and beyond Rong Chen, Yi-Cheng Li, Jia-Ming Cai, Kun Cao and Han-Bo-Ram Lee Citation: Chen R, Li Y C, Cai J M, Cao Kun, Lee H B R. Atomic level deposition to extend Moore's law and beyond. Int. J. Extrem. Manuf. 2, 022002 (2020). Scanning probe lithography on calixarene towards single-digit nanometer fabrication Marcus Kaestner and Ivo W Rangelow Citation: Kaestner M, Rangelow I W. Scanning probe lithography on calixarene towards single-digit nanometer fabrication. Int. J. Extrem. Manuf. 2, 032005 (2020). Directed self-assembly of block copolymers for sub-10 nm fabrication Yu Chen and Shisheng Xiong Citation: Chen Y, Xiong S S. Directed self-assembly of block copolymers for sub-10 nm fabrication. Int. J. Extrem. Manuf. 2, 032006 (2020). Achieving a sub-10 nm nanopore array in silicon by metal-assisted chemical etching and machine learning Yun Chen, Yanhui Chen, Junyu Long, Dachuang Shi, Xin Chen, Maoxiang Hou, Jian Gao, Huilong Liu, Yunbo He, Bi Fan, Ching-Ping Wong and Ni Zhao Citation: Chen Y, Chen Y H, Long J Y, Shi D C, Chen X et al. Achieving a sub-10 nm nanopore array in silicon by metal- assisted chemical etching and machine learning. Int. J. Extrem. Manuf. 3, 035104(2021). Int. J. Extrem. Manuf. 3 (2021) 032002 Topical Review the most significant role because they not only enable con- features, and categories of the fabrication and applications of tinuous performance improvements of electronic chips and sub-10 nm structures. devices, but also boost the prototyping and realization of other advanced devices, such as photonic [20–24], biomed- 2.1. Why is sub-10 nm fabrication interesting and significant? ical [25–27], and quantum devices [28–30]. After decades of development, the frontier of nanoscience and nanotechnology The biggest driving force of nanofabrication technology is has moved to the sub-10 nm scale where the size effects on the the IC industry. After decades of development according to structure properties become more apparent, and there are more Moore’s law, the node of the IC industry has reduced to the available novel functionalities for emerging device applica- single-digit nanometer scale. The architecture of field-effect tions compared to their macroscale counterparts, which calls transistors (FETs) has changed from planar to fin FETs. The for the development of advanced nanofabrication techniques width of nanofins in the latest complementary metal-oxide with sub-10 nm resolution and precision. semiconductor (CMOS) chips based on fin-FET technology While the fabrication methods for feature sizes larger than has shrunk to 7 nm (figure 1(a)) [35]. Moreover, the pitch 10 nm are relatively mature, the reliable fabrication at the sub- of Si nanofins has also reduced from 60 to 34 nm for FET 10 nm scale is much more challenging. Though the node in density scaling, which enables the latest chips with higher the latest silicon (Si)-based ICs manufacturing industry has performance and lower power consumption. Similarly, sub- achieved the sub-10 nm scale by combining the most soph- 10 nm structures and features are also imperative to many non- isticated lithography, etch, and film deposition processes, the CMOS devices. Some typical examples include zone plates for process portfolio in the Si-based IC industry cannot be directly x-ray (figure 1(b)) [36–40], nanopore sequencing devices for transferred to applications related to the research and devel- DNA strands (figure 1(c)) [41–45], superconductor nanowire opment of novel devices because of the extremely high cost single-photon detectors (SNSPDs) (figure 1(d)) [46–49], and and process compatibility [31–34]. For these emerging devices ultrahigh-frequency surface acoustic wave (SAW, figure 1(e)) with sub-10 nm features, it is impossible to develop a fabric- resonators [50–52]. In these non-CMOS devices, smaller fea- ation process portfolio for all applications because irregular ture size can either broaden the work range or improve device layouts and novel materials are usually involved for different performance. kinds of devices. To satisfy the cost, material, and structure In addition to the above-mentioned functional devices requirements of the devices with sub-10 nm features, research- which have already been commercialized, the materials and ers have developed various fabrication methods some of which structures at the sub-10 nm scale also bring many novel and are very specific for certain applications. Considering the sig- interesting properties to emerging nanodevices. Generally, the nificance of nanofabrication techniques on pushing the fron- novel properties at the sub-10 nm scale can either be enabled tier of nanoscience and nanotechnology, we believe that it is by the structure size or by the gap between the structures. necessary to summarize the existing sub-10 nm fabrication The nanoparticles and nanocrystals of sub-10 nm structures techniques to provide a reference for researchers who work have much larger specific surface area compared to their bulk on this research topic. counterparts. Plenty of unpaired electrons on the surfaces In this review, we aim to provide a comprehensive sum- and the exposed facets on such small nanocrystals are sup- mary on the background, techniques, and applications of sub- posed to significantly promote their chemical reaction and 10 nm fabrication, which includes the following sections: a catalytic performance (figure 2(a)) [57]. More importantly, brief introduction of this review (section 1), the research back- the bandgap of the semiconductor nanocrystals (i.e. quantum ground and the types of sub-10 nm features (section 2), the dots) can be finetuned by varying their sizes at the single- collection and categorization of fabrication methods and tech- digit nanometer scale (figure 2(b)) [58, 59]. Sub-10 nm gaps niques (section 3), the relevant applications of various sub- can tune physical properties via the strong resonant energy 10 nm features and structures (section 4), and the remain- coupling and tunneling of electrons [60]. On the one hand, ing challenges and perspectives of this field (section 5). sub-10 nm gaps can serve as a cavity that enables extreme We hope that this review equips researchers with basic electromagnetic-wave confinement into a volume (figure 2(c)) knowledge on sub-10 nm fabrication to help them choose [61], which can strengthen weak light-matter interactions for appropriate fabrication methods in their fundamental studies single molecule and nonlinear spectroscopy [62–65]. Fur- and device developments. Particularly, we believe that this thermore, sub-10 nm gaps are important building blocks for review will provide inspirations for researchers who want information processing devices, such as transistors and tun- to develop new nanofabrication techniques to further push neling junctions (figure 2(d)) [66–72]. the boundaries of science and technology at the sub-10 nm scale. 2.2. Categories of building blocks and their applications In this review, sub-10 nm fabrication is introduced as an 2. Research background enabling technological platform to extend Moore’s law, explore interesting phenomena and effects in fundamental In the following section, we present the background of sub- studies, and develop new concept devices, as summarized 10 nm fabrication, including why we are interested in the sub- in figure 3. The applications in IC chips, enhanced spec- 10 nm scale, different kinds of building blocks with sub-10 nm troscopy, sensing, field emission, genetic sequencing, and 2 Int. J. Extrem. Manuf. 3 (2021) 032002 Topical Review (a) 22 nm node 14 nm node 10 nm node fin=8 nm fin=8 nm fin=7 nm P=60 nm P=42 nm P=34 nm (b) (c) (d) (e) 30 nm 1.4 µm 3 nm 240 nm DNA Nanopore X-ray zone plate Nanopore Single-photon Ultrahigh-frequency sequencing detector SAW resonator Figure 1.
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