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Tungsten nitride
Effect of Nitrogen Pressure on the Structure of Cr-N, Ta-N, Mo-N, and WN Nanocrystals Synthesized by Arc Discharge
Transition Metal Carbides and Nitrides in Energy Storage and Conversion
(12) United States Patent (10) Patent No.: US 7,780,793 B2 Yang Et Al
Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties
New Pathways to Tungsten and Molybdenum Oxides, Nitrides and Azides Michael Richard Close Iowa State University
A Map of the Inorganic Ternary Metal Nitrides
Electrochemical Properties of Tiwn/Tiwc Multilayer Coatings Deposited by RF-Magnetron Sputtering on AISI 1060
Structure, Mechanical Properties and Tribology of W–N and W–O Coatings
Effect of NH3 on Film Properties of MOCVD Tungsten Nitride from Cl4
(12) Patent Application Publication (10) Pub. No.: US 2003/0198587 A1 Kaloyeros Et Al
Growth of Low Work Function Materials Using Aerosol-Assisted Metalorganic Chemical Vapor Deposition
Self-Standing Electrodes with Core-Shell Structures for High-Performance MARK Supercapacitors
Effect of Nitrogen Pressure on the Structure of Cr-N, Ta-N, Mo-N, and WN Nanocrystals Synthesized by Arc Discharge
Glossary of Semiconductor Terminology A
MOCVD of Tungsten and Molybdenum Nitrides
Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor
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