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(12) Patent Application Publication (10) Pub. No.: US 2003/0198587 A1 Kaloyeros Et Al US 2003O198587A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2003/0198587 A1 Kaloyeros et al. (43) Pub. Date: Oct. 23, 2003 (54) METHOD FOR LOW-TEMPERATURE (52) U.S. Cl. ............ 423/409; 427/255.28; 427/255.394; ORGANIC CHEMICAL VAPOR DEPOSITION 423/417 OFTUNGSTEN NITRIDE, TUNGSTEN NITRIDE FILMS AND TUNGSTEN NITRDE DIFFUSION BARRIERS FOR COMPUTER (57) ABSTRACT INTERCONNECT METALLIZATION Processes for producing tungsten nitride and tungsten nitride (75) Inventors: Alain E. Kaloyeros, Slingerlands, NY films are provided in which a tungsten carbonyl compound (US); Barry C. Arkles, Dresher, PA and a nitrogen-containing reactant gas are reacted at a (US) temperature below about 600 C. Tungsten nitride precur Sors are also included which comprise a tungsten carbonyl Correspondence Address: compound capable of forming a tungsten nitride film in the AKIN GUMPSTRAUSS HAUER & FELD presence of a nitrogen-containing reactant gas at a tempera L.L.P. ture of less than about 600 C. A process for forming a film ONE COMMERCE SQUARE by atomic layer deposition is also provided which includes 2005 MARKET STREET, SUITE 2200 introducing into a Substrate having a Surface into a deposi PHILADELPHIA, PA 19103-7013 (US) tion chamber and heating the Substrate to a temperature Sufficient to allow adsorption of a tungsten Source precursor (73) Assignees: Gelest, Inc., Tullytown, PA; The or an intermediate of a tungsten Source precursor, introduc Research Foundation of State Univer ing a tungsten Source precursor into the deposition chamber sity of New York, Albany, NY by pulsing for a period of time Sufficient to form a Self limiting monolayer of the Source precursor or an interme (21) Appl. No.: 10/425,823 diate of the tungsten Source precursor intermediate, intro ducing an inert gas into the deposition chamber by pulsing (22) Filed: Apr. 28, 2003 the inert gas to purge the deposition to remove the tungsten nitride precursor in the gas phase, introducing a nitrogen Related U.S. Application Data containing gas into the deposition chamber by pulsing to (63) Continuation of application No. 09/502,260, filed on react with the adsorbed precursor monolayer on the Substrate Feb. 11, 2000, now abandoned. Surface and to form a first tungsten nitride atomic layer on the Substrate Surface. An inert gas may then introduced into (60) Provisional application No. 60/119,957, filed on Feb. the deposition chamber for a period of time sufficient to 12, 1999. remove the unreacted nitrogen-containing gas and reaction byproducts from the deposition chamber. The entire pulsing Publication Classification Sequence including precursor, inert gas, nitrogen-containing gas may be repeated until a film with a desired thickness is (51) Int. Cl." ........................... C23C 16/34; CO1B 21/06 achieved. Patent Application Publication Oct. 23, 2003 Sheet 1 of 15 US 2003/0198587 A1 (spun Ae-Iq-IV) Absu.au i Patent Application Publication Oct. 23, 2003 Sheet 2 of 15 US 2003/0198587 A1 i (Spru? AIle-IqIW) Absuau i Patent Application Publication Oct. 23, 2003 Sheet 3 of 15 US 2003/0198587 A1 000 0SX Patent Application Publication Oct. 23, 2003 Sheet 4 of 15 US 2003/0198587 A1 Patent Application Publication Oct. 23, 2003 Sheet 5 of 15 US 2003/0198587 A1 CC ge en wax g ed ge pass O O d a > 39 8 > i Crs 9 sa e 6 wer 3D CO en G (SU? AI e ICW A Sueu i Patent Application Publication Oct. 23, 2003. Sheet 6 of 15 US 2003/0198587 A1 Patent Application Publication Oct. 23, 2003 Sheet 7 of 15 US 2003/0198587 A1 (Sun Auerq-IV) Absuapu i Patent Application Publication Oct. 23, 2003 Sheet 8 of 15 US 2003/0198587 A1 g w s s G vacat g C C 9 d 9. e (%) uoge pueouo) ou IOW Patent Application Publication Oct. 23, 2003 Sheet 9 of 15 US 2003/0198587 A1 O - O CN C (N S O O O 1n a O D G) 8:3s NaS. p D 35 O O) C CD trace O C O r to O O O CN d O O O O O O O O O CN tes t Pell pez. Du JON i Patent Application Publication Oct. 23, 2003 Sheet 10 of 15 US 2003/0198587 A1 Patent Application Publication Oct. 23, 2003 Sheet 11 of 15 US 2003/0198587 A1 (2A) uOeuebuo) buIOW i Patent Application Publication Oct. 23, 2003 Sheet 12 of 15 US 2003/0198587 A1 5 3. s g en years C G ge e va D (%) uOeueouo) ouoW Patent Application Publication Oct. 23, 2003 Sheet 13 of 15 US 2003/0198587 A1 S O O S 8 () i Patent Application Publication Oct. 23, 2003 Sheet 14 of 15 US 2003/0198587 A1 Patent Application Publication Oct. 23, 2003 Sheet 15 of 15 US 2003/0198587 A1 US 2003/O198587 A1 Oct. 23, 2003 METHOD FOR LOW-TEMPERATURE ORGANIC with nitrogen or ammonia, often in the presence of hydrogen CHEMICAL VAPOR DEPOSITION OF TUNGSTEN attemperatures above 600 C. and under pressure. E. Markel NITRIDE, TUNGSTEN NITRIDE FILMS AND et al., Kirk-Othmer Encyclopedia of Chemical Technology, TUNGSTEN NITRIDE DIFFUSION BARRIERS FOR “Nitrides,” 17, pp. 114 (1996). Manufacturing processes COMPUTER INTERCONNECT METALLIZATION leading to tungsten nitride with more uniform properties and lower process temperatures are desirable since many poten CROSS-REFERENCE TO RELATED tial applications for tungsten nitride films are temperature APPLICATIONS Sensitive. For example, in microelectronic applications there is a need for a low temperature process for forming tungsten 0001) This application claims the benefit of U.S. Provi nitride, Since Such applications require consistent film prop sional Application No. 60/119,957, filed Feb. 12, 1999. erties in order to achieve uniform electrical properties and stress free coatings (uniform lattice parameters or amor BACKGROUND OF THE INVENTION phous structure) without damaging structures by exposure to high temperatures or corrosive by-products. 0002. As computer chip device dimensions continue their evolution towards feature sizes below 100 nm, new liner 0006 While WN presents a potentially viable solution materials and associated process technologies are needed to given its attractive properties as highly refractory material ensure viable diffusion barrier and adhesion promoter per with excellent mechanical and chemical properties, there formance between the conductor and the Surrounding remains problems with achieving high conformality with regions of Silicon-based and dielectric-based materials. low impurities. Since tungsten nitride can be deposited in These liners must possess mechanical and Structural integ amorphous form (see, B. Park et al., J. Electron. Mater, 26, rity, good conformality within aggressive device features, pp. 1 (1997)), it is highly desirable for microelectronic high conductivity to minimize plug overall effective resis applications, given that an amorphous film inherently has no tance, and thermal, mechanical, and electrical compatibility grain boundaries. The lack of grain boundaries provides with neighboring conductor and dielectric material Systems. added Stability towards metal migration by eliminating grain Most importantly, liner materials are expected to meet these boundaries as a primary path for metal diffusion. Accord Stringent requirements at increasingly reduced thicknesses, ingly, prior work in the literature has Successfully demon in order to maximize the real estate available for the primary strated the applicability of WN as an effective barrier metal conductor within the continuously decreasing device against copper diffusion at temperatures as high as 750 C. dimensions. In particular, liner thickneSS is predicted to M. Uekubo et al., Thin Solid Films, 286, pp. 170 (1996). decrease from 20 nm for the 0.15 um device generation, to less than 6 mm for its 0.05 um in counterpart as noted in the 0007 Uekubo, noted above, has deposited tungsten International Technology Roadman for Semiconductors, nitride by reactive Sputtering. Unfortunately, the application of Sputtering techniques is limited by concerns over the 1999 Edition, Santa Clara, Calif., pp. 165. ability to provide good conformality in Sub-100 nm device 0003. These needs are further complicated by the on StructureS. going transition from aluminum-based to copper-based met allization Schemes, and requires exploring new candidate 0008 Tungsten nitride has also been deposited by chemi liner materials that are chemically and thermodynamically cal vapor deposition (CVD) from tungsten tetrafluoride more stable towards copper diffusion and migration than the (WF) and ammonia (NH). S. Marcus et al., Thin Solid presently used titanium/titanium nitride materials. These Films, 236, pp.330 (1993). While such CVD-based methods include binary compounds, Such as tantalum nitride (TAN) could provide viable Step coverage in Such aggressive topog and tungsten nitride (WN), and ternary compounds Such as raphies, thereby allowing the potential use of the same CVD tantalum-silicon-nitride (TaSiN) and tungsten-silicon-ni liner technology in multiple generations of Sub-100 nm tride (WSiN). See, M. Takayama et al., J. Vac. Sci. microprocessor and memory products, inorganic CVD from Technol, B 14, pp. 674 (1996); M. Uekubo et al., Thin Solid WF and NH poses challenges. The difficulties include: (a) Films, 286, pp. 170 (1996); and K. Nakajima et al.Appl. transport and handling concerns attributed to the high reac Surf Sci., 117/118, pp. 312(1997). tivity of the fluorinated WF Source, (b) process concerns caused by potential gas phase particle generation in the 0004 Tungsten nitrides are refractory compounds with reaction of WF and NH and (c) reliability issues pertaining high densities and exceptional hardneSS and barrier proper to the possible inclusion of fluorine in the resulting WN ties. They are usually regarded as interstitial compounds, liner which is a fast diffuser in metals. Such as copper. i.e., with a range of non-Stoichiometric ratioS oftungsten and nitrogen atoms. Even So, two simple Stoichiometries are 0009 M.
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