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Lead tin telluride
DETERMINE Ol. Eg., X U.S
Report
19800021154.Pdf
Band Crossing Evidence in Pbsnte Observed by Optical Transmission
United States Patent (19) 11) Patent Number: 4,722,087 Partin 45) Date of Patent: Jan
United States Patent [191 4,612,644
Arxiv:1206.2088V1
List of Semiconductor Materials - Wikipedia, the Free Encyclopedia Page 1 of 4
LONG WAVELENGTH Pbsnte LASERS with CW OPERATION ABOVE 77K
Lead Telluride Bonding and Segmentation Study
MBE-Grown Lead Tin Telluride Infrared Devices
July 16, 1968 G
N/ a National Aeronautics and Spaceadministration Langley Researchcenter Hampton,Virginia 23665
Thermoelectric Property Studies on Lead Chalcogenides, Double-Filled Cobalt Tri-Antimonide and Rare Earth
Lead Telluride - Wikipedia, the Free Encyclopedia Page 1
TECH LIBRARY KAFB, NM ^^.I^Jsz^^.A^&Jzl&I^ ;
Enhanced Thermoelectric Properties of Topological Crystalline Insulator Pbsnte Nanowires Grown by a Vapor Transport Approach
THERMOELECTRIC MATERIALS BASED on Snte BINARY COMPOUNDS
Top View
MICROGRAVITY SCIENCE Archibald L. Fripp, William J. Debnam Jr., Glenn A.. Woodell and Ivan 0. Clark NASA Langley Research Center