DOCSLIB.ORG
Explore
Sign Up
Log In
Upload
Search
Home
» Tags
» Lattice constant
Lattice constant
Theoretical Study of Ternary Cosp Semiconductor
Application of Composition Controlled Nickel-Alloyed Iron Sulfide Pyrite Nanocrystal Thin Films As the Hole Transport
Two-Dimensional Shape Memory Graphene Oxide
Mlatticeabc: Generic Lattice Constant Prediction
New Findings for the Surface Properties of Indium Oxide Single Crystals
First-Principles Electronic Structure and Relative Stability of Pyrite and Marcasite: Implications for Photovoltaic Performance
Diamond Unit Cell
Lattice-Constant and Band-Gap Tuning in Wurtzite and Zincblende
Optical and Structural Properties of Indium Nitride Epilayers Grown by High-Pressure Chemical Vapor Deposition and Vibrational Studies of ZGP Single Crystal
Site Identity and Importance in Cosubstituted Bixbyite In2o3
Indium Gallium Arsenide Three-State and Non-Volatile Memory Quantum Dot Devices" (2014)
Feasibility of Band Gap Engineering of Pyrite Fes2
Standard X-Ray Diffraction Powder Patterns
Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires
Accurate Electronic, Transport, and Bulk Properties of Gallium Arsenide (Gaas)
Vertical External Cavity Surface Emitting Laser
Properties of Group-IV, III–V and II–VI Semiconductors
Physical Properties of Iii-V Semiconductor Compounds
Top View
ECE 371 – Chapter 1 Crystal Structure of Solids Classifying Materials on the Basis of Their Ability to Conduct Current
Technology: What Is Ingaas?
Band Gap Bowing of Binary Alloys: Experimental Results Compared To
Challenges and Advancement of Blue III-Nitride Vertical-Cavity Surface-Emitting Lasers
Optical and Electronic Properties of Some Binary Semiconductors from Energy Gaps
Epitaxial Growth of Zro2 on Gan Templates by Oxide Molecular Beam Epitaxy Xing Gu Virginia Commonwealth University,
[email protected]
Crystal Structure of Graphite, Graphene and Silicon
Thermal Transport Evolution Due to Nanostructural Transformations in Ga-Doped Indium-Tin-Oxide Thin Films
Simplifying Indium Gallium Arsenide Growth on Gallium Arsenide Substrate
Chapter 3. Epitaxial Growth and Processing of Compound Semiconductors
Electronic and Bonding Analysis of Hardness in Pyrite-Type Transition-Metal Pernitrides
How Ionized Radicals Bind to Ir(111) Supported Graphene
Gan-Based Vertical-Cavity Surface-Emitting Lasers Incorporating Dielectric Distributed Bragg Reflectors
In-Situ Growth and Characterization of Indium Tin Oxide Nanocrystal Rods
1602127108.Pdf