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Epitaxial Growth of Zro2 on Gan Templates by Oxide Molecular Beam Epitaxy Xing Gu Virginia Commonwealth University, [email protected]

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Epitaxial Growth of Zro2 on Gan Templates by Oxide Molecular Beam Epitaxy Xing Gu Virginia Commonwealth University, Gux@Vcu.Edu Virginia Commonwealth University VCU Scholars Compass Electrical and Computer Engineering Publications Dept. of Electrical and Computer Engineering 2007 Epitaxial growth of ZrO2 on GaN templates by oxide molecular beam epitaxy Xing Gu Virginia Commonwealth University, [email protected] Natalia Izyumskaya Virginia Commonwealth University Vitaliy Avrutin Virginia Commonwealth University, [email protected] Bo Xiao Virginia Commonwealth University, [email protected] Hadis Morkoç Virginia Commonwealth University, [email protected] Follow this and additional works at: http://scholarscompass.vcu.edu/egre_pubs Part of the Electrical and Computer Engineering Commons Gu, X., Izyumskaya, N., Avrutin, V., et al. Epitaxial growth of ZrO2 on GaN templates by oxide molecular beam epitaxy. Applied Physics Letters, 91, 022916 (2007). Copyright © 2007 AIP Publishing LLC. Downloaded from http://scholarscompass.vcu.edu/egre_pubs/99 This Article is brought to you for free and open access by the Dept. of Electrical and Computer Engineering at VCU Scholars Compass. It has been accepted for inclusion in Electrical and Computer Engineering Publications by an authorized administrator of VCU Scholars Compass. For more information, please contact [email protected]. APPLIED PHYSICS LETTERS 91, 022916 ͑2007͒ Epitaxial growth of ZrO2 on GaN templates by oxide molecular beam epitaxy ͒ Xing Gu,a Natalia Izyumskaya, Vitaly Avrutin, Bo Xiao, and Hadis Morkoç Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 ͑Received 8 March 2007; accepted 10 June 2007; published online 13 July 2007͒ ͑ ͒ Molecular beam epitaxial growth of ZrO2 has been achieved on GaN 0001 /c-Al2O3 substrates employing a reactive H2O2 oxygen source. A low temperature buffer followed by in situ annealing ͑ ͒ and high temperature growth has been employed to attain monoclinic, 100 -oriented ZrO2 thin ͑ ͒ films. The typical full width at half maximum of a 30-nm-thick ZrO2 100 film rocking curves is 0.4 arc deg and the root-mean-square surface roughness is ϳ4Å.␻−2␪ and pole figure x-ray diffraction patterns confirm the monoclinic structure of ZrO2. Data support an in-plane epitaxial ͓ ͔ʈ ͓ ¯͔ ͓ ͔ʈ ͓ ¯ ͔ relationship of ZrO2 010 GaN 112 and ZrO2 001 GaN 1100 . X-ray diffraction and reflection high-energy electron diffraction analyses reveal in-plane compressive strain, which is mainly due to the lattice mismatch. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2753719͔ ͑ ͒ Zirconium dioxide ZrO2 thin films have a wide range In this letter, we report on the epitaxial growth of ZrO2 of applications such as solid electrolytes,1 catalysts,2 and op- on GaN using oxide MBE. Because of a very low equilib- 3 tical coatings. In terms of electronics, ZrO2 has been con- rium pressure of metal Zr, making thermal evaporation ex- sidered as a gate dielectric in the realm of scaled down ceedingly difficult, zirconium tetra ͑Zr-t͒ butoxide was cho- 4 ͑ ͒ metal-oxide-semiconductor devices, which require the re- sen as the metal organic MO precursor for Zr. In order to duction of the thickness of the gate dielectric. For instance, it overcome the drawbacks of the conventional oxygen plasma was pointed out that the equivalent thickness of a gate di- sources such as possible surface damage by high-energy par- electric should be around 0.8 nm for devices with short gate ticle and degradation of plasma sources due to the high re- ͑ϳ ͒ 5 activity of oxygen radicals, a highly reactive H2O2 was em- 15 nm , which is sufficiently thin for SiO2 to suffer from ͑ ployed. Already, H2O2 has been applied to ZnO Refs. 13 and direct tunneling current. The above consideration stems from ͒ 15 ͑ϳ ͒ 14 and PbTiO3. The crystal structure and surface morphol- its wide band gap 5.8 eV , dielectric constant over 20, ogy of the epitaxially grown ZrO thin films were character- ͑ ͒ 2 high breakdown field 15–20 MV/cm , good thermal stabil- ized by reflection high-energy electron diffraction ͑RHEED͒, ͑⌬ ϳ ͒ ity, and large conduction band offset Ec 1.4 eV with x-ray diffraction ͑XRD͒, and atomic force microscopy 6 silicon. The epitaxial growth of ZrO2 on Si by various meth- ͑AFM͒. ods such as metal organic chemical vapor deposition GaN ͑0001͒ templates fabricated by on c-plane sapphire ͑ ͒7 8 MOCVD and pulsed laser deposition has been reported. served as substrates. ZrO2 thin films reported here were Single-crystal oxides grown by molecular beam epitaxy grown in a modified Riber 3200 MBE system using 50% ͑MBE͒ can, in principle, avoid grain boundaries while pro- aqueous solution of H2O2 as the reactive oxygen source. Zr-t viding a good interface. However, attempts of ZrO2 epitaxy butoxide was kept in a stainless-steel bubbler heated by a ͑ ͒ ͑ N ͒ on Si 100 by MBE using O2 gas as the oxidant have re- water bath, and argon 6 purity was used as the carrier gas. 9,10 During growth, the temperature of the bubbler for the Zr MO sulted in polycrystalline ZrO2. source was kept at 56 °C. The flow rate of the Ar carrier gas ZrO2 can also be used as an effective bridge material between complex perovskite oxides and semiconductors, was controlled by a mass flow controller and the flow rate since it helps to accommodate the large discrepancy in crys- values used in this work ranged between 1 and 2 SCCM ͑ ͒ tal structure and lattice constant between the perovskite ma- SSCM denotes cubic centimeter per minute at STP , which resulted in growth rates in the range of 10–20 nm/h. The terials and hexagonal GaN. To make possible the integration ZrO films were grown under oxygen-rich conditions and the of ferroelectric perovskite oxides and semiconductors such 2 pressure of H O used was kept from 1.5 to 3.0ϫ10−5 Torr. as GaN, suitable bridge layers are required to provide a plat- 2 2 The growth evolution of ZrO by MBE was monitored in situ form for high-quality oxide growth on GaN. In this vein, 2 by a RHEED system. Figure 1 displays a RHEED pattern of crystalline, especially single crystalline, ZrO2 is required. In the GaN template before the growth was initiated and a set of addition, single crystal ZrO2 can also be used as a gate di- ZrO2 patterns taken at different stages of ZrO2 growth. The electric material if sufficiently high quality can be attained. ͑ ͒ diffraction pattern of ZrO2 011 is rotated about 15° from In a somewhat related application, amorphous ZrO has also 2 both the GaN ͑112¯0͒ and GaN ͑11¯00͒ directions. At the ini- been explored as a gate dielectric for GaN-based devices by 11 tial stages of the growth, a few monolayers of ZrO2 were using ultraviolet ozone oxidation of Zr metal or electron ͑ ͒ 12 deposited on the GaN template at a low temperature LT of beam evaporation. However, epitaxial growth of ZrO2 on 300 °C to minimize the potential oxidation of GaN which GaN has not been reported to date. has a strong tendency to occur at higher temperatures. With- out such a LT buffer layer, the RHEED pattern of ZrO2 ͒ a Electronic mail: [email protected] grown at 700 °C showed a highly a-textured ͑100͒ structure This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP: 0003-6951/2007/91͑2͒/022916/3/$23.0091, 022916-1 © 2007 American Institute of Physics 128.172.48.59 On: Wed, 08 Apr 2015 18:05:56 022916-2 Gu et al. Appl. Phys. Lett. 91, 022916 ͑2007͒ ͑ ͒ ͑ ¯ ͒ ͑ ͒ ͑ ͒ FIG. 1. RHEED pattern of a GaN 1120 and b of ZrO2 011 grown high temperature without buffer layer ͑c͒ during growth of low temperature ͑ ͒ ͑ ͒ ͑ ͒ ZrO2 011 buffer layer, and d during high temperature growth ZrO2 011 . ͓see Fig. 1͑b͒; the pattern did not change when the sample was rotated͔, which can be caused by the above-mentioned oxidation of GaN at high temperatures. The LT-ZrO2 exhibits a three-dimensional ͑3D͒ RHEED pattern, as shown in Fig. ͑ ͒ 1 c . To combat this issue, the LT ZrO2 thin buffer was then annealed in situ at 750 °C with H2O2 flow. A noticeable surface flattening was observed at annealing temperatures above 700 °C, as indicated by the transition from a 3D spotty RHEED pattern to a two-dimensional ͑2D͒ streaky ͑ ͒͑͒ ␻ ␪ ͑ ͒ FIG. 3. Color online a -2 XRD pattern of ZrO2 /GaN. b Rocking ͓ ͑ ͔͒ ͑ ͒ ͑ ͒ ͑ ͒ ͑ ͒ one Fig. 1 d . The high temperature HT growth of ZrO2 curve of ZrO2 100 . c XRD pole figure scan of ZrO2 101 and with a total thickness of 30 nm was then performed at GaN ͑10−11͒. 700 °C, and the streaky RHEED pattern remained. The surface morphology of the epitaxially grown, peak position using the sapphire ͑0006͒ reflection as refer- 10-nm-thick ZrO was examined by AFM ͑see Fig. 2͒. The 2 ence. A comparison with the bulk value of a0 =5.169 Å indi- AFM image indicates a smooth and uniform oxide thin film cates that the ZrO thin film is under in-plane compressive ϳ ϫ ␮ 2 2 with a rms value of 4 Å for the 5 5 m image. The strain and the layer is not fully relaxed yet. ͑The out-of-plane ZrO layer is contiguous, and some features of the atomic ␧ʈ ͑ ͒ 2 misfit strains were determined by using = a−a0 /a, steps from the MOCVD GaN template remain observable.
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