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Ninth International Conference on Ion Beam Modification of Materials INIS'Av-'octh llllllllllllllllllllllllllllllllllllllllllll AU9716201 Ninth International Conference on Ion Beam Modification of Materials BOOK OF ABSTRACTS Ion Beam Modification of Materials Canberra, Australia 5-10 February 1995 SPONSORS Academic Press/Harcourt Brace Jovanovich Alphatech International Ltd Australian Materials Research Society Australian National University Balzers Australia P/L Danfysik A/S Department of Electronic Materials Engineering, ANU Elsevier High Voltage Engineering IBM (Australia) National Electrostatics Corporation Stanton Scientific COMMITTEES Chairman Jim Williams Department of Electronic Materials Engineering Research School of Physical Sciences and Engineering Australian National University Canberra, ACT, 0200 Australia Tel: (61) (6) 249 0020 Fax: (61) (6) 249 0511 Conference e-mail: E-mail: [email protected] [email protected] Local Organising Committee Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University. Conference Administrator: Toni Purdy International Committee H.H. Andersen A. Golanski S. Namba Denmark France Japan M. Behar J. Gyulai S.T. Picraux Brazil Hungary USA H. Bernas N. Gerasimenko E. Rimini France Russia Italy W.L. Brown T. Itoh F.W. Saris USA Japan Netherlands G. Carter J.C. Kelly P.D. Townsend UK Australia UK W.K. Chu J.W. Mayer S.C. Zou USA USA China J.A. Davies O. Meyer C.W. White Canada FRG USA V. Vavilov Russia Program Committee D.G. Armour J.C. McCallum F. Priolo (Salford, UK) (RMIT, Australia) (Catania, Italy) H.A. Atwater D.K. McKenzie M.C. Ridgway (Caltech, USA) (Sydney, Australia) (ANU, Canberra) R.W. Boswell W. Moller D.K. Sood (ANU, Australia) (Rossendorf, Germany) (RMIT, Australia) N.W. Cheung M. Nastasi B. Stritzker (Berkeley, USA) (Los Alamos, USA) (Augsburg, Germany) R.G. Elliman E. Nygren B.V. Svensson (ANU, Australia) (ANU, Australia) (Stockholm, Sweden) H.B. Harrison M. Petra vie M. Takai (Brisbane, Australia) (ANU, Australia) (Osaka, Japan) C. Jagadish J.M. Poate M. Tamura (ANU, Australia) (A.T. & T., USA) (Tsukuba, Japan) B.V. King A. Polman J.L. Whitton (Newcastle, Australia) (FOM, Netherlands) (Queen's, Canada) S. Mantl S. Prawer J.S. Williams (Julich, Germany) (Melbourne, Australia) (ANU, Canberra) •:WBtzM81oywT.> :ti.;rCSz:.; ::::: Session 5 Session 9 Session 12 Session 16 Low Energy I Secondary Defects and Sillcides Biomedical Applications and Transient Diffusion Novel Irradiation Effects 8.30 a m. J. Ullman D.J. Eaglesham H. Bernas K.M. Horn 9.00 Welcome and Opening H.A. Atwater K.S. Jones K. Reeson M. Iwaki 9.15 W. Ensinger R.D. Goldberg J.C. Kelly 9.25 Session 1 Plenary S. Mantl 9.30 T. Weber F.W. Saris H. Katsumata S.E. Donnelly 9.45 I. Yamada A. Claverie M. Behar S. Roorda 10.00 H.H. Andersen Coffee Break Coffee Break A. Vantomme Coffee Break Session 10 Poslzr SuessjLOA 111 Semiconductors, Defects, 10.15 Compounds, Devices Coffee Break 10.30 Coffee Break Session 6 Session 17 10.45 Low Energy II Session 13 Materials Modification SIMOX, Oxides and Compounds M. Nastasi J.C. Barbour 11.00 T. Seidel C. Charles S. Ashok K. Neubeck 11.15 G.S. Was S L. Ellingboe N. Bordes 11.30 D. McKenzie Session 11 B Hollander J.G. Marques 11.40 Session 2 Silicon, Si-Ge Annealing Basic Processes I T. Diaz de la Rubia T.E. Haynes 11.45 S.U. Campisano R. Kalish 12.00 H.C. Hofsass P. Kringhoj A. Chayahara 12.10 J.A. Sprague 12.15 Lunch Break W.C. Wong Lunch Break L. Palmetschofer 12.25 J.F. Ziegler 12.30 N.N. Gerasimenko D.N. Jamieson 12.40 J. De Wachter 12.45 T. Bachmann G.B. Hoflund 12.55 Lunch Break 1.00 Lunch Break 1.30 Conference Outing 7.30 Return SiWEDSEsBft^i6:8BB:::. rnmaw#####ISSSSSlSlliil 2.00 p.m. Session 14 Session 18 Silicon Devices and Gettering Metals, Equipment and Techniques D C. Jacobson J. Conrad 2.30 S.M. Myers I.G. Brown 2.45 K.T. Short 3.00 Session 7 R. Kogler B.H. Wolf PosXzr S£jsalon 11 Materials Modification and Conference Techniques 3.15 E. Rimini Y. Horino 3.30 Session 3 Coffee Break B. Stritzker Basic Process II K.-H. Heinig 3.45 Concluding Remarks 4.00 B.X. Liu Session 15 Optical Materials and Devices: Multilayers S. Coffa 4.30 A. Dunlop Session 8 A Pol man Point Defects and Damage Outing B.G. Svensson 4.45 I V. Mitchell 5.00 A. Hallen B. Nielsen W.F.X. Frank 5.15 M. Doebeli T. Schmidt J. G. Simmons 5.30 Session 4 T. Motooka T. Kimura P aster Szsjsion I Basic and Low Energy Processes 6.00 M. Watanabe First buses leave for Conference 6.30-8.30 Barbeque (Old Canberra House) Banquet, Parliament House 7.00 Conference Outing Return 9.00 Bohmische Meeting PROGRAM Monday, 6 February 9.00 a.m. Welcome: Chairman 9.05 Professor D. Terrell, Vice-Chancellor, AND SESSION 1 Plenary - Chair: J.W. Mayer 9.25 01.001 S. Mantl Compound Formation by Ion Beam Synthesis and a Comparison with Alternative Methods such as Deposition and Growth or Wafer Bonding 10.00 01.002 H.H. Andersen Structure, Morphology and Melting Hysteresis of lon- Implanted Nanocrystals 10.30 Coffee Break 11.00 01.003 T. Seidel The Role of Ion Implantation and Alternative Techniques in Future ULSI Processing SESSION 2 Basic Processes 1 - Chair: J.A. Davies 11.40 02.001 T. Diaz de la Rubia The Application of Molecular Dynamics Simulation to the Study of Particle-Solid Interactions 12.10 02.002 J.A. Sprague Molecular Dynamics Simulations of Low-Energy Surface Mixing Processes 12.25 02.003 J.F. Ziegler Problems and Corrections to Heavy Ion Stopping Theory 12.40 02.004 J. De Wachter Emission Channeling Studies of the Lattice Site of Over­ sized Atoms Implanted in Iron and Nickel 12.55 Lunch Break SESSION 3 Basic Processes II - Chair: B. King 3.30 03.001 K.-H. Heinig Mechanisms of IonBeam Synthesis 4.00 03.002 B.X. Liu Metastable Alloys Synthesised by Ion Mixing and Thermo­ dynamic and Kinetic Modelling 4.30 03.003 A. Dunlop Atomic Mixing Induced in Metallic Bilayers by High Electronic Excitations 4.45 03.004 I.V. Mitchell Characterization of Low Energy Argon Bombarded Si(100) in Sub-nanometer Scale 5.00 03.005 A. Hallen Radiation Damage Features on Mica Probed by Scanning ForceMicroscopy 5.15 03.006 M. Doebeli Defect Production by MeV Cluster Impacts SESSION 4 Poster Session 1: 5.30-7.00 Basic and Low Energy Processes 9.00 Bohmische Meeting PROGRAM Tuesday, 7 February SESSION 5 Low Energy 1 - Chair: R.W. Boswell 8.30 05.001 J. Ullman Ions as Useful Tools for Carbon Film Deposition and Modification 9.00 05.002 H.A. Atwater Ion-Surface Interactions as a Tool for Exploration of Very Low Temperature (< 370°C) Silicon Epitaxy 9.15 05.003 W. Ensinger On the Mechanism of Crystal Growth Orientation of Ion Beam Assisted Deposited Thin Films 9.30 05.004 T. Weber Surface Treatment by Low Energy Metal Ion Implantation 9.45 05.005 1. Yamada Surface Modifications by Gas Cluster Ion Beams 10.00 Coffee Break SESSION 6 Low Energy II - Chair: S.C. Zou 10.30 06.001 J.C. Barbour ECR Plasma-assisted Deposition of AIOxAI2O3 11.00 06.002 C. Charles Pulsed Oxygen and Oxygen/Silane Helicon Diffusion Plasmas 11.15 06.003 G.S. Was Ion Beam Assisted Deposition in the Synthesis and Fracture of Metal-ceramic Microaminates 11.30 06.004 D. McKenzie High Pressure Phases by Low Energy Ion Implantation 12.00 06.005 H.C. Holsass Cubic Boron Nitride Formation by Deposition of 0+ and N+ Low Energy Ions 12.15 Lunch Break SESSION 7 Poster Session II: 3.00-4.30 Materials Modification and Techniques SESSION 8 Point Defects and Damage - Chair: F. Priolo 4.30 08.001 B.G. Svensson Point Defects in MeV Ion-implanted Silicon Studies by Deep Level Transient Spectroscopy 5.00 08.002 B. Nielsen Defects in Ion Implanted Si Probed with Positrons 5.15 08.003 T. Schmidt Defect Levels in H+ and He+ Bombarded Gallium Arsenide 5.30 08.004 T. Motooka The Role of Defects during Amorphization and Relaxation Processesin Si 6.00 08.005 M. Watanabe Observation of Damage in Low-dose Ion Implanted Silicon by TEM in Conjuction with Copper Decoration Technique 6.30-8.30 Barbeque (Old Canberra House) PROGRAM Wednesday, 8 February SESSION 9 Secondary Defects and Transient Diffusion - Chair: J.M. Poate 8.30 09.001 D.J. Eaglesham Ion Damage and Diffusion in Si 9.00 09.002 K.S.Jones A Study of Evolution of Type III (end of range) Dislocation Annealing Kinetics in Sr+ Implanted Si 9.15 09.003 R.D. Goldberg Secondary Defect Formation in Self-Ion Irradiated Silicon 9.30 09.004 F.W. Saris Dislocation Formation and B Transient Diffusion in C Co- implanted Si 9.45 09.005 A. Claverie "Transient" Diffusion of Dopant in Preamorphised Si: the Role of EOR Defects 10.00 Coffee Break SESSION 10 Poster Session III: 10.00-11.30 Semiconductors, Defects, Compounds, Devices SESSION 11 Silicon, Si-Ge Annealing - Chair: R.G. Elliman 11.30 11.001 T.E. Haynes Recrystallization Rates during Solid-Phase Epitaxy of Implant-Amorphized Si i-xGex Alloys 12.00 11.002 P. Kringhoj Recrystallisation of Relaxed SiGe Alloy Layers 12.15 11.003 W.C. Wong The Effect of Strain and Strain-Relaxation on the Morphology of the Crystalline-Amorphous Interface during Solid-Phase Epitaxial Crystallisation of Ge implanted Si 12.30 11.004 N.N.
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